TWI563244B - - Google Patents

Info

Publication number
TWI563244B
TWI563244B TW104121564A TW104121564A TWI563244B TW I563244 B TWI563244 B TW I563244B TW 104121564 A TW104121564 A TW 104121564A TW 104121564 A TW104121564 A TW 104121564A TW I563244 B TWI563244 B TW I563244B
Authority
TW
Taiwan
Application number
TW104121564A
Other languages
Chinese (zh)
Other versions
TW201602534A (zh
Inventor
Li-Ping Chen
Original Assignee
Advanced Micro Fab Equip Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fab Equip Inc filed Critical Advanced Micro Fab Equip Inc
Publication of TW201602534A publication Critical patent/TW201602534A/zh
Application granted granted Critical
Publication of TWI563244B publication Critical patent/TWI563244B/zh

Links

TW104121564A 2014-07-08 2015-07-02 探測溫度的系統和方法及設有該系統的mocvd設備 TW201602534A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410323157.8A CN105441909B (zh) 2014-07-08 2014-07-08 一种探测温度的系统和方法及设有该系统的mocvd设备

Publications (2)

Publication Number Publication Date
TW201602534A TW201602534A (zh) 2016-01-16
TWI563244B true TWI563244B (pt-PT) 2016-12-21

Family

ID=55552527

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104121564A TW201602534A (zh) 2014-07-08 2015-07-02 探測溫度的系統和方法及設有該系統的mocvd設備

Country Status (2)

Country Link
CN (1) CN105441909B (pt-PT)
TW (1) TW201602534A (pt-PT)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105928625B (zh) * 2016-06-20 2023-04-07 中国工程物理研究院流体物理研究所 基于反射率变化的金属表面动态温度点测量方法
CN111155073A (zh) * 2019-12-30 2020-05-15 中国电子科技集团公司第十三研究所 Mocvd外延设备的温度校准方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100111511A1 (en) * 2008-10-31 2010-05-06 Nir Merry Use of infrared camera for real-time temperature monitoring and control
EP2372752A1 (en) * 2008-12-26 2011-10-05 Y Systems Ltd. Method and device for measuring temperature during deposition of semiconductor
TW201243955A (en) * 2011-03-11 2012-11-01 Applied Materials Inc Apparatus for monitoring and controlling substrate temperature
TW201351529A (zh) * 2012-05-07 2013-12-16 Advanced Micro Fab Equip Inc 真空處理裝置的基片溫度測量方法和裝置
TW201419383A (zh) * 2012-06-26 2014-05-16 Veeco Instr Inc 基於GaN材料之溫度控制

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11190670A (ja) * 1997-12-26 1999-07-13 Toshiba Corp 表面温度測定装置及び表面温度測定方法
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US8254767B2 (en) * 2008-08-29 2012-08-28 Applied Materials, Inc. Method and apparatus for extended temperature pyrometry
CN102183316B (zh) * 2010-12-10 2013-04-24 中国科学院安徽光学精密机械研究所 可调谐半导体激光吸收光谱温度实时监测仪
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Screenホールディングス 熱処理装置
CN103884449B (zh) * 2014-03-04 2016-08-17 中国空间技术研究院 一种基于光纤传输的喷口电弧温度非接触测量系统

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100111511A1 (en) * 2008-10-31 2010-05-06 Nir Merry Use of infrared camera for real-time temperature monitoring and control
EP2372752A1 (en) * 2008-12-26 2011-10-05 Y Systems Ltd. Method and device for measuring temperature during deposition of semiconductor
TW201243955A (en) * 2011-03-11 2012-11-01 Applied Materials Inc Apparatus for monitoring and controlling substrate temperature
TW201351529A (zh) * 2012-05-07 2013-12-16 Advanced Micro Fab Equip Inc 真空處理裝置的基片溫度測量方法和裝置
TW201419383A (zh) * 2012-06-26 2014-05-16 Veeco Instr Inc 基於GaN材料之溫度控制

Also Published As

Publication number Publication date
TW201602534A (zh) 2016-01-16
CN105441909A (zh) 2016-03-30
CN105441909B (zh) 2018-06-26

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