TWI562538B - Switching circuit - Google Patents

Switching circuit

Info

Publication number
TWI562538B
TWI562538B TW104126647A TW104126647A TWI562538B TW I562538 B TWI562538 B TW I562538B TW 104126647 A TW104126647 A TW 104126647A TW 104126647 A TW104126647 A TW 104126647A TW I562538 B TWI562538 B TW I562538B
Authority
TW
Taiwan
Prior art keywords
switching circuit
switching
circuit
Prior art date
Application number
TW104126647A
Other languages
English (en)
Other versions
TW201642590A (zh
Inventor
Chaofeng Cai
Original Assignee
Delta Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delta Electronics Inc filed Critical Delta Electronics Inc
Publication of TW201642590A publication Critical patent/TW201642590A/zh
Application granted granted Critical
Publication of TWI562538B publication Critical patent/TWI562538B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
TW104126647A 2015-05-21 2015-08-17 Switching circuit TWI562538B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510262220.6A CN106300929B (zh) 2015-05-21 2015-05-21 开关电路

Publications (2)

Publication Number Publication Date
TW201642590A TW201642590A (zh) 2016-12-01
TWI562538B true TWI562538B (en) 2016-12-11

Family

ID=57324831

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126647A TWI562538B (en) 2015-05-21 2015-08-17 Switching circuit

Country Status (3)

Country Link
US (1) US9917574B2 (zh)
CN (1) CN106300929B (zh)
TW (1) TWI562538B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI827767B (zh) * 2018-12-17 2024-01-01 愛爾蘭商亞德諾半導體國際無限公司 疊接複合開關之迴轉率控制

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015110513B3 (de) * 2015-06-30 2016-05-25 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterschaltung mit einem Feldeffekttransistor
US10256811B2 (en) * 2016-11-22 2019-04-09 Electronics And Telecommunications Research Institute Cascode switch circuit including level shifter
TWI697097B (zh) * 2017-04-18 2020-06-21 力智電子股份有限公司 電力開關及其半導體裝置
FR3075508A1 (fr) * 2017-12-15 2019-06-21 Exagan Dispositif de commutation autoalimente et procede de fonctionnement d'un tel dispositif
TWI694729B (zh) * 2018-06-19 2020-05-21 瑞昱半導體股份有限公司 開關電路
CN110677017B (zh) * 2019-10-15 2024-07-09 无锡硅动力微电子股份有限公司 一种低EMI常通型SiCJFET的驱动电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320414B1 (en) * 1999-05-14 2001-11-20 U.S. Philips Corporation High-voltage level tolerant transistor circuit
US20090278513A1 (en) * 2008-05-06 2009-11-12 International Rectifier Corporation (El Segundo, Ca) Enhancement mode III-nitride switch with increased efficiency and operating frequency
US20100295102A1 (en) * 2004-07-08 2010-11-25 Semisouth Laboratories, Inc. Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making
US20120241756A1 (en) * 2011-03-21 2012-09-27 International Rectifier Corporation High Voltage Composite Semiconductor Device with Protection for a Low Voltage Device
TW201503583A (zh) * 2013-07-12 2015-01-16 Delta Electronics Inc 串疊開關裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663547A (en) * 1981-04-24 1987-05-05 General Electric Company Composite circuit for power semiconductor switching
US6930517B2 (en) * 2003-09-26 2005-08-16 Semiconductor Components Industries, L.L.C. Differential transistor and method therefor
DE602005010566D1 (de) * 2004-08-26 2008-12-04 Matsushita Electric Ind Co Ltd Halbleiterbauelement und modul damit
US7719055B1 (en) 2007-05-10 2010-05-18 Northrop Grumman Systems Corporation Cascode power switch topologies
DE102010027832B3 (de) * 2010-04-15 2011-07-28 Infineon Technologies AG, 85579 Halbleiterschaltanordnung mit einem selbstleitenden und einem selbstsperrenden Transistor
CN102185286A (zh) 2011-05-04 2011-09-14 武汉理工大学 大功率igbt冗余驱动保护电路
TWI439022B (zh) * 2012-03-07 2014-05-21 Holtek Semiconductor Inc 具電壓箝位功能的閘極驅動電路
TWI439841B (zh) 2012-03-15 2014-06-01 Univ Nat Chiao Tung 電流限制電路裝置
FR2998735B1 (fr) * 2012-11-27 2022-10-07 Hispano Suiza Sa Convertisseur de tension continu-continu a haute tension
JP6163310B2 (ja) * 2013-02-05 2017-07-12 エスアイアイ・セミコンダクタ株式会社 定電圧回路及びアナログ電子時計
CN104716815B (zh) * 2013-12-16 2018-09-04 台达电子企业管理（上海）有限公司 功率电路及电源系统

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320414B1 (en) * 1999-05-14 2001-11-20 U.S. Philips Corporation High-voltage level tolerant transistor circuit
US20100295102A1 (en) * 2004-07-08 2010-11-25 Semisouth Laboratories, Inc. Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making
US20090278513A1 (en) * 2008-05-06 2009-11-12 International Rectifier Corporation (El Segundo, Ca) Enhancement mode III-nitride switch with increased efficiency and operating frequency
US20120241756A1 (en) * 2011-03-21 2012-09-27 International Rectifier Corporation High Voltage Composite Semiconductor Device with Protection for a Low Voltage Device
TW201503583A (zh) * 2013-07-12 2015-01-16 Delta Electronics Inc 串疊開關裝置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI827767B (zh) * 2018-12-17 2024-01-01 愛爾蘭商亞德諾半導體國際無限公司 疊接複合開關之迴轉率控制

Also Published As

Publication number Publication date
US20160344381A1 (en) 2016-11-24
CN106300929B (zh) 2019-03-15
CN106300929A (zh) 2017-01-04
TW201642590A (zh) 2016-12-01
US9917574B2 (en) 2018-03-13

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