TWI562154B - Methods for reading data from a storage unit of a flash memory and apparatuses using the same - Google Patents

Methods for reading data from a storage unit of a flash memory and apparatuses using the same

Info

Publication number
TWI562154B
TWI562154B TW104105515A TW104105515A TWI562154B TW I562154 B TWI562154 B TW I562154B TW 104105515 A TW104105515 A TW 104105515A TW 104105515 A TW104105515 A TW 104105515A TW I562154 B TWI562154 B TW I562154B
Authority
TW
Taiwan
Prior art keywords
apparatuses
methods
storage unit
flash memory
same
Prior art date
Application number
TW104105515A
Other languages
English (en)
Other versions
TW201631592A (zh
Inventor
Yang Chih Shen
Original Assignee
Silicon Motion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Motion Inc filed Critical Silicon Motion Inc
Priority to TW104105515A priority Critical patent/TWI562154B/zh
Priority to CN201510124203.6A priority patent/CN106033323B/zh
Priority to US14/702,392 priority patent/US9990280B2/en
Publication of TW201631592A publication Critical patent/TW201631592A/zh
Application granted granted Critical
Publication of TWI562154B publication Critical patent/TWI562154B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1041—Resource optimization
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Memory System (AREA)
TW104105515A 2015-02-17 2015-02-17 Methods for reading data from a storage unit of a flash memory and apparatuses using the same TWI562154B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW104105515A TWI562154B (en) 2015-02-17 2015-02-17 Methods for reading data from a storage unit of a flash memory and apparatuses using the same
CN201510124203.6A CN106033323B (zh) 2015-02-17 2015-03-20 读取快闪存储器中储存单元的方法以及使用该方法的装置
US14/702,392 US9990280B2 (en) 2015-02-17 2015-05-01 Methods for reading data from a storage unit of a flash memory and apparatuses using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104105515A TWI562154B (en) 2015-02-17 2015-02-17 Methods for reading data from a storage unit of a flash memory and apparatuses using the same

Publications (2)

Publication Number Publication Date
TW201631592A TW201631592A (zh) 2016-09-01
TWI562154B true TWI562154B (en) 2016-12-11

Family

ID=56622135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105515A TWI562154B (en) 2015-02-17 2015-02-17 Methods for reading data from a storage unit of a flash memory and apparatuses using the same

Country Status (3)

Country Link
US (1) US9990280B2 (zh)
CN (1) CN106033323B (zh)
TW (1) TWI562154B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI612473B (zh) * 2017-03-22 2018-01-21 慧榮科技股份有限公司 垃圾回收方法以及使用該方法的裝置
CN109213623B (zh) * 2017-06-30 2022-02-22 慧荣科技股份有限公司 降低快闪储存介面中传收数据错误方法及装置
CN109426623A (zh) * 2017-08-29 2019-03-05 深圳市中兴微电子技术有限公司 一种读取数据的方法及装置
KR20190090268A (ko) * 2018-01-24 2019-08-01 에스케이하이닉스 주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
CN111324282A (zh) * 2018-12-14 2020-06-23 北京兆易创新科技股份有限公司 一种存储器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000251484A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置
US20080195800A1 (en) * 2007-02-08 2008-08-14 Samsung Electronics Co., Ltd. Flash Memory Device and Flash Memory System Including a Buffer Memory
US20090319871A1 (en) * 2008-06-24 2009-12-24 Yutaka Shirai Memory system with semiconductor memory and its data transfer method
US20110219179A1 (en) * 2003-12-15 2011-09-08 Samsung Electronics Co., Ltd. Flash memory device and flash memory system including buffer memory
US20140104947A1 (en) * 2012-10-11 2014-04-17 Winbond Electronics Corp. Non-volatile semiconductor memory data reading method thereof
US20140149646A1 (en) * 2012-11-26 2014-05-29 Samsung Electronics Co., Ltd. Memory systems including flash memories, first buffer memories, second buffer memories and memory controllers and methods for operating the same
TW201421238A (zh) * 2009-08-26 2014-06-01 Phison Electronics Corp 下達讀取指令的方法、控制器與儲存系統
TW201438020A (zh) * 2013-03-27 2014-10-01 Chih-Wen Cheng 快閃記憶體轉接器及快閃記憶體儲存裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06266596A (ja) * 1993-03-11 1994-09-22 Hitachi Ltd フラッシュメモリファイル記憶装置および情報処理装置
CN101866676A (zh) * 2009-04-16 2010-10-20 智微科技股份有限公司 用于多通道快闪存储系统的数据存取方法及其数据存取装置
TWI435215B (zh) * 2009-08-26 2014-04-21 Phison Electronics Corp 下達讀取指令與資料讀取方法、控制器與儲存系統
TWI454906B (zh) * 2009-09-24 2014-10-01 Phison Electronics Corp 資料讀取方法、快閃記憶體控制器與儲存系統
CN103136108B (zh) * 2011-12-05 2016-04-06 慧荣科技股份有限公司 快闪存储装置及其数据读取方法
US10534714B2 (en) * 2014-12-18 2020-01-14 Hewlett Packard Enterprise Development Lp Allocating cache memory on a per data object basis

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000251484A (ja) * 1999-02-26 2000-09-14 Sony Corp 不揮発性半導体記憶装置
US20110219179A1 (en) * 2003-12-15 2011-09-08 Samsung Electronics Co., Ltd. Flash memory device and flash memory system including buffer memory
US20080195800A1 (en) * 2007-02-08 2008-08-14 Samsung Electronics Co., Ltd. Flash Memory Device and Flash Memory System Including a Buffer Memory
US20090319871A1 (en) * 2008-06-24 2009-12-24 Yutaka Shirai Memory system with semiconductor memory and its data transfer method
TW201421238A (zh) * 2009-08-26 2014-06-01 Phison Electronics Corp 下達讀取指令的方法、控制器與儲存系統
US20140104947A1 (en) * 2012-10-11 2014-04-17 Winbond Electronics Corp. Non-volatile semiconductor memory data reading method thereof
US20140149646A1 (en) * 2012-11-26 2014-05-29 Samsung Electronics Co., Ltd. Memory systems including flash memories, first buffer memories, second buffer memories and memory controllers and methods for operating the same
TW201438020A (zh) * 2013-03-27 2014-10-01 Chih-Wen Cheng 快閃記憶體轉接器及快閃記憶體儲存裝置

Also Published As

Publication number Publication date
US9990280B2 (en) 2018-06-05
TW201631592A (zh) 2016-09-01
CN106033323A (zh) 2016-10-19
CN106033323B (zh) 2019-11-15
US20160239416A1 (en) 2016-08-18

Similar Documents

Publication Publication Date Title
HK1258732A1 (zh) 數據確證和存儲
HK1259159A1 (zh) 分布式數據集存儲和檢索
TWI561982B (en) Data storage device and flash memory control method
ZA201704018B (en) Method for storing data by storage device and storage device
EP2988221A4 (en) CONTROLLER, FLASH MEMORY DEVICE, AND METHOD OF WRITING DATA IN A FLASH MEMORY DEVICE
EP3252592A4 (en) Method and device for storing and reading data
GB201717499D0 (en) Data storage and verification
IL231550A0 (en) Saving secure information in external memory
EP2955633A4 (en) METHOD AND DEVICE FOR DELETING DATA FOR FLASH MEMORY
PL3123387T4 (pl) Zabezpieczenie ładowania danych do pamięci nieulotnej zabezpieczonego elementu
EP3170087A4 (en) Flash memory device for storing sensitive information and other data
TWI561981B (en) Data reading method, memory control circuit unit and memory storage apparatus
GB2549775B (en) Directed placement of data in memory
EP3196767A4 (en) Method for writing data into flash memory device, flash memory device and storage system
EP3037949A4 (en) DATA DUPLICATION PROCESS AND MEMORY ARRANGEMENT
ZA201704122B (en) Method for accessing data in a memory at an unaligned address
HK1244914A1 (zh) 數據存儲系統
TWI562154B (en) Methods for reading data from a storage unit of a flash memory and apparatuses using the same
GB2525713B (en) Memory subsystem with wrapped-to-continuous read
GB201603295D0 (en) Data storage
GB2542867B (en) Data storage
TWI561984B (en) Data storage device and data writing method thereof
GB2540965B (en) Secure configuration data storage
GB2570914B (en) Secure data storage
GB2524848B (en) System and Smart USB Device For Data Storage