TWI561923B - - Google Patents

Info

Publication number
TWI561923B
TWI561923B TW101146220A TW101146220A TWI561923B TW I561923 B TWI561923 B TW I561923B TW 101146220 A TW101146220 A TW 101146220A TW 101146220 A TW101146220 A TW 101146220A TW I561923 B TWI561923 B TW I561923B
Authority
TW
Taiwan
Application number
TW101146220A
Other versions
TW201337462A (zh
Inventor
Katsuya Takemura
Takashi Miyazaki
Hiroyuki Urano
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW201337462A publication Critical patent/TW201337462A/zh
Application granted granted Critical
Publication of TWI561923B publication Critical patent/TWI561923B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101146220A 2011-12-09 2012-12-07 化學增幅負型光阻組成物、光硬化性乾膜、其製造方法、圖型形成方法、及電氣．電子元件保護用皮膜 TW201337462A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011270001 2011-12-09

Publications (2)

Publication Number Publication Date
TW201337462A TW201337462A (zh) 2013-09-16
TWI561923B true TWI561923B (zh) 2016-12-11

Family

ID=47297021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101146220A TW201337462A (zh) 2011-12-09 2012-12-07 化學增幅負型光阻組成物、光硬化性乾膜、其製造方法、圖型形成方法、及電氣．電子元件保護用皮膜

Country Status (5)

Country Link
US (1) US8865391B2 (zh)
EP (1) EP2602661B1 (zh)
JP (1) JP5846110B2 (zh)
KR (1) KR101994822B1 (zh)
TW (1) TW201337462A (zh)

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JP6031059B2 (ja) 2014-03-31 2016-11-24 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
JP6194862B2 (ja) * 2014-07-29 2017-09-13 信越化学工業株式会社 シリコーン骨格含有高分子化合物、ネガ型レジスト材料、光硬化性ドライフィルム、パターン形成方法及び電気・電子部品保護用皮膜
JP6468137B2 (ja) * 2014-10-01 2019-02-13 信越化学工業株式会社 化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法並びに電気・電子部品保護用皮膜
KR101946100B1 (ko) * 2015-03-20 2019-02-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 포함하는 컬러필터 및 표시장치
JP6502754B2 (ja) * 2015-06-08 2019-04-17 信越化学工業株式会社 光硬化性樹脂組成物及びこれを用いた光硬化性ドライフィルム
JP6571585B2 (ja) * 2015-06-08 2019-09-04 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
BR112017025086B1 (pt) * 2015-06-16 2021-11-03 Dow Global Technologies Llc Coagente de cura/retardante de queima híbrido
KR101852457B1 (ko) * 2015-11-12 2018-04-26 삼성에스디아이 주식회사 신규한 중합체를 포함하는 수지 조성물 및 이를 이용한 유기막
JP6499102B2 (ja) 2016-03-04 2019-04-10 信越化学工業株式会社 ポジ型感光性樹脂組成物、光硬化性ドライフィルム及びその製造方法、パターン形成方法、及び積層体
JP6616743B2 (ja) * 2016-06-30 2019-12-04 信越化学工業株式会社 シリコーン骨格含有高分子化合物、光硬化性樹脂組成物、光硬化性ドライフィルム、積層体、及びパターン形成方法
JP6919172B2 (ja) * 2016-10-14 2021-08-18 信越化学工業株式会社 積層体及びパターン形成方法
JP2018091939A (ja) 2016-11-30 2018-06-14 株式会社Adeka ネガ型感光性組成物、その硬化物およびその硬化方法
JP6291094B2 (ja) * 2017-01-24 2018-03-14 信越化学工業株式会社 積層型半導体装置、及び封止後積層型半導体装置
US10095112B2 (en) * 2017-02-24 2018-10-09 Irresistible Materials Ltd Multiple trigger photoresist compositions and methods
JP7085791B2 (ja) * 2017-04-21 2022-06-17 日本化薬株式会社 感光性樹脂組成物及びその硬化物
CN110582726B (zh) * 2017-05-10 2023-08-04 株式会社力森诺科 正型感光性树脂组合物、正型感光性树脂用热交联剂、图案固化膜及其制造方法、半导体元件以及电子设备
JP6874584B2 (ja) 2017-08-09 2021-05-19 信越化学工業株式会社 感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法
JP6866802B2 (ja) * 2017-08-09 2021-04-28 信越化学工業株式会社 シリコーン骨格含有高分子化合物、感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法
JP6798481B2 (ja) * 2017-12-27 2020-12-09 信越化学工業株式会社 感光性樹脂組成物、パターン形成方法、及び光半導体素子の製造方法
JP6870657B2 (ja) 2018-05-17 2021-05-12 信越化学工業株式会社 感光性樹脂組成物、感光性ドライフィルム、及びパターン形成方法
JP6919626B2 (ja) 2018-05-17 2021-08-18 信越化学工業株式会社 シルフェニレン骨格及びポリエーテル骨格を含むポリマー
JP6981390B2 (ja) * 2018-10-15 2021-12-15 信越化学工業株式会社 感光性樹脂組成物、感光性ドライフィルム、及びパターン形成方法
JP7063239B2 (ja) * 2018-11-01 2022-05-09 信越化学工業株式会社 感光性樹脂組成物及び感光性ドライフィルム
US11548985B2 (en) 2018-11-28 2023-01-10 Shin-Etsu Chemical Co., Ltd. Siloxane polymer containing isocyanuric acid and polyether skeletons, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device
JP7056541B2 (ja) 2018-12-19 2022-04-19 信越化学工業株式会社 感光性樹脂組成物、感光性ドライフィルム及びパターン形成方法
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CN114600045A (zh) * 2019-10-21 2022-06-07 信越化学工业株式会社 感光性树脂组合物、感光性干膜及图案形成方法

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Also Published As

Publication number Publication date
TW201337462A (zh) 2013-09-16
JP5846110B2 (ja) 2016-01-20
US20130149645A1 (en) 2013-06-13
KR101994822B1 (ko) 2019-07-01
EP2602661B1 (en) 2019-08-28
EP2602661A1 (en) 2013-06-12
US8865391B2 (en) 2014-10-21
KR20130065612A (ko) 2013-06-19
JP2013140338A (ja) 2013-07-18

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