TWI560846B - Apparatuses and methods for providing capacitance in a multi-chip module - Google Patents
Apparatuses and methods for providing capacitance in a multi-chip moduleInfo
- Publication number
- TWI560846B TWI560846B TW104118204A TW104118204A TWI560846B TW I560846 B TWI560846 B TW I560846B TW 104118204 A TW104118204 A TW 104118204A TW 104118204 A TW104118204 A TW 104118204A TW I560846 B TWI560846 B TW I560846B
- Authority
- TW
- Taiwan
- Prior art keywords
- apparatuses
- methods
- chip module
- providing capacitance
- capacitance
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/013—Modifications of generator to prevent operation by noise or interference
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16265—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/359,769 US8779849B2 (en) | 2012-01-27 | 2012-01-27 | Apparatuses and methods for providing capacitance in a multi-chip module |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201535671A TW201535671A (zh) | 2015-09-16 |
TWI560846B true TWI560846B (en) | 2016-12-01 |
Family
ID=48869704
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102103021A TWI520303B (zh) | 2012-01-27 | 2013-01-25 | 在多晶片模組中用於提供電容之裝置及方法 |
TW104118204A TWI560846B (en) | 2012-01-27 | 2013-01-25 | Apparatuses and methods for providing capacitance in a multi-chip module |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102103021A TWI520303B (zh) | 2012-01-27 | 2013-01-25 | 在多晶片模組中用於提供電容之裝置及方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8779849B2 (zh) |
KR (1) | KR101642624B1 (zh) |
CN (1) | CN104081522B (zh) |
TW (2) | TWI520303B (zh) |
WO (1) | WO2013112723A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9213386B2 (en) | 2012-10-22 | 2015-12-15 | Micron Technology, Inc. | Apparatuses and methods and for providing power responsive to a power loss |
US9202785B2 (en) * | 2013-11-08 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three dimensional integrated circuit capacitor having vias |
US9455189B1 (en) | 2015-06-14 | 2016-09-27 | Darryl G. Walker | Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture |
US9767962B2 (en) | 2016-01-22 | 2017-09-19 | Micron Technology, Inc. | Apparatuses, multi-chip modules and capacitive chips |
US10587195B2 (en) * | 2016-04-29 | 2020-03-10 | Apple Inc. | Integrated passive devices to reduce power supply voltage droop |
US9875959B2 (en) | 2016-06-09 | 2018-01-23 | International Business Machines Corporation | Forming a stacked capacitor |
CN107342281B (zh) * | 2017-06-29 | 2019-05-21 | 厦门市三安集成电路有限公司 | 一种化合物半导体mim电容结构的制作方法 |
CN109216292B (zh) * | 2017-06-29 | 2020-11-03 | 晟碟信息科技(上海)有限公司 | 包含降低针脚电容的控制开关的半导体装置 |
DE102018217001B4 (de) * | 2018-10-04 | 2020-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Halbleiterkondensatoren unterschiedlicher Kapazitätswerte in einem Halbleitersubstrat |
US20200373224A1 (en) * | 2019-05-21 | 2020-11-26 | Microsoft Technology Licensing, Llc | Through-silicon vias and decoupling capacitance |
US11710726B2 (en) | 2019-06-25 | 2023-07-25 | Microsoft Technology Licensing, Llc | Through-board power control arrangements for integrated circuit devices |
US11270975B2 (en) * | 2020-07-21 | 2022-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor packages including passive devices and methods of forming same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344961B1 (en) * | 1999-11-19 | 2002-02-05 | Murata Manufacturing Co., Ltd | Multi-layer capacitator, wiring substrate, decoupling circuit, and high-frequency circuit |
US20110309475A1 (en) * | 2010-06-18 | 2011-12-22 | Samsung Electronics Co., Ltd. | Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5687109A (en) | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
US5032892A (en) | 1988-05-31 | 1991-07-16 | Micron Technology, Inc. | Depletion mode chip decoupling capacitor |
US6124625A (en) | 1988-05-31 | 2000-09-26 | Micron Technology, Inc. | Chip decoupling capacitor |
GB2256735B (en) | 1991-06-12 | 1995-06-21 | Intel Corp | Non-volatile disk cache |
US5880925A (en) | 1997-06-27 | 1999-03-09 | Avx Corporation | Surface mount multilayer capacitor |
KR100274593B1 (ko) * | 1997-09-04 | 2000-12-15 | 윤종용 | 디램 셀 캐패시터 및 그의 제조 방법 |
JP2002025856A (ja) | 2000-07-06 | 2002-01-25 | Nec Corp | 積層コンデンサ及び半導体装置並びに電子回路基板 |
US6990603B2 (en) | 2002-01-02 | 2006-01-24 | Exanet Inc. | Method and apparatus for securing volatile data in power failure in systems having redundancy |
KR100534101B1 (ko) * | 2004-01-08 | 2005-12-06 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 디커플링 캐패시터배치방법 |
US7126182B2 (en) * | 2004-08-13 | 2006-10-24 | Micron Technology, Inc. | Memory circuitry |
JP4166235B2 (ja) | 2005-07-29 | 2008-10-15 | Tdk株式会社 | 積層コンデンサ |
US7451348B2 (en) | 2005-08-04 | 2008-11-11 | Dot Hill Systems Corporation | Dynamic write cache size adjustment in raid controller with capacitor backup energy source |
JP4437489B2 (ja) | 2006-10-25 | 2010-03-24 | 株式会社日立製作所 | 揮発性キャッシュメモリと不揮発性メモリとを備えたストレージシステム |
EP3043381B1 (en) | 2007-05-10 | 2019-05-22 | Murata Integrated Passive Solutions | Integration substrate with a ultra-high-density capacitor and a through-substrate via |
US8110415B2 (en) | 2008-04-03 | 2012-02-07 | International Business Machines Corporation | Silicon based microchannel cooling and electrical package |
US8395902B2 (en) | 2008-05-21 | 2013-03-12 | International Business Machines Corporation | Modular chip stack and packaging technology with voltage segmentation, regulation, integrated decoupling capacitance and cooling structure and process |
US8325554B2 (en) | 2008-07-10 | 2012-12-04 | Sanmina-Sci Corporation | Battery-less cache memory module with integrated backup |
CN101741147A (zh) * | 2008-11-05 | 2010-06-16 | 光宝科技股份有限公司 | 电力供应装置 |
KR101024241B1 (ko) | 2008-12-26 | 2011-03-29 | 주식회사 하이닉스반도체 | 반도체 장치 및 그를 포함하는 반도체 패키지 |
JP4816766B2 (ja) * | 2009-06-03 | 2011-11-16 | カシオ計算機株式会社 | 電波受信装置 |
US8294240B2 (en) | 2009-06-08 | 2012-10-23 | Qualcomm Incorporated | Through silicon via with embedded decoupling capacitor |
US8298906B2 (en) | 2009-07-29 | 2012-10-30 | International Business Machines Corporation | Trench decoupling capacitor formed by RIE lag of through silicon via (TSV) etch |
US8183678B2 (en) | 2009-08-04 | 2012-05-22 | Amkor Technology Korea, Inc. | Semiconductor device having an interposer |
US8558345B2 (en) | 2009-11-09 | 2013-10-15 | International Business Machines Corporation | Integrated decoupling capacitor employing conductive through-substrate vias |
US8090988B2 (en) | 2009-11-24 | 2012-01-03 | Virtium Technology, Inc. | Saving information to flash memory during power failure |
FR2955419B1 (fr) * | 2010-01-21 | 2012-07-13 | St Microelectronics Crolles 2 | Dispositif integre de memoire du type dram |
KR101165966B1 (ko) * | 2010-04-27 | 2012-07-18 | 삼성전자주식회사 | 커맨드에 의해 동기 모드 또는 비동기 모드로 액세스 가능한 메모리 시스템 |
CN201984961U (zh) * | 2011-01-10 | 2011-09-21 | 福建火炬电子科技股份有限公司 | 一种多芯组陶瓷电容器 |
-
2012
- 2012-01-27 US US13/359,769 patent/US8779849B2/en active Active
-
2013
- 2013-01-24 CN CN201380006969.3A patent/CN104081522B/zh active Active
- 2013-01-24 KR KR1020147022678A patent/KR101642624B1/ko active IP Right Grant
- 2013-01-24 WO PCT/US2013/022969 patent/WO2013112723A1/en active Application Filing
- 2013-01-25 TW TW102103021A patent/TWI520303B/zh active
- 2013-01-25 TW TW104118204A patent/TWI560846B/zh active
-
2014
- 2014-07-14 US US14/330,927 patent/US20140320201A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344961B1 (en) * | 1999-11-19 | 2002-02-05 | Murata Manufacturing Co., Ltd | Multi-layer capacitator, wiring substrate, decoupling circuit, and high-frequency circuit |
US20110309475A1 (en) * | 2010-06-18 | 2011-12-22 | Samsung Electronics Co., Ltd. | Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TWI520303B (zh) | 2016-02-01 |
US20130194032A1 (en) | 2013-08-01 |
CN104081522B (zh) | 2017-08-22 |
US20140320201A1 (en) | 2014-10-30 |
CN104081522A (zh) | 2014-10-01 |
WO2013112723A1 (en) | 2013-08-01 |
KR20140116202A (ko) | 2014-10-01 |
TW201342571A (zh) | 2013-10-16 |
KR101642624B1 (ko) | 2016-07-25 |
TW201535671A (zh) | 2015-09-16 |
US8779849B2 (en) | 2014-07-15 |
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