TWI560810B - Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof - Google Patents

Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof

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Publication number
TWI560810B
TWI560810B TW103107381A TW103107381A TWI560810B TW I560810 B TWI560810 B TW I560810B TW 103107381 A TW103107381 A TW 103107381A TW 103107381 A TW103107381 A TW 103107381A TW I560810 B TWI560810 B TW I560810B
Authority
TW
Taiwan
Prior art keywords
erased
manufacturing
condition
electric field
volatile memory
Prior art date
Application number
TW103107381A
Other languages
English (en)
Other versions
TW201535612A (zh
Inventor
Deci Fan
Zhimin Chen
Rongzhang Lu
Original Assignee
Xinova Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xinova Technology Ltd filed Critical Xinova Technology Ltd
Priority to TW103107381A priority Critical patent/TWI560810B/zh
Publication of TW201535612A publication Critical patent/TW201535612A/zh
Application granted granted Critical
Publication of TWI560810B publication Critical patent/TWI560810B/zh

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TW103107381A 2014-03-05 2014-03-05 Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof TWI560810B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103107381A TWI560810B (en) 2014-03-05 2014-03-05 Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103107381A TWI560810B (en) 2014-03-05 2014-03-05 Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201535612A TW201535612A (zh) 2015-09-16
TWI560810B true TWI560810B (en) 2016-12-01

Family

ID=54695304

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107381A TWI560810B (en) 2014-03-05 2014-03-05 Non-volatile memory unit under the condition that low electric field source is erased and the manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI560810B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11362218B2 (en) * 2020-06-23 2022-06-14 Silicon Storage Technology, Inc. Method of forming split gate memory cells with thinned side edge tunnel oxide
TWI756043B (zh) * 2021-02-02 2022-02-21 力晶積成電子製造股份有限公司 非揮發性記憶體結構及其製造方法
TWI812572B (zh) * 2021-07-20 2023-08-11 力晶積成電子製造股份有限公司 半導體裝置
TWI795847B (zh) * 2021-07-20 2023-03-11 力晶積成電子製造股份有限公司 半導體裝置

Also Published As

Publication number Publication date
TW201535612A (zh) 2015-09-16

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