TWI559487B - Line layout and method of spacer self-aligned quadruple patterning for the same - Google Patents

Description

Method for line layout and its self-aligned quadruple patterning

The present invention relates to a circuit layout and a circuit layout method, and more particularly to a spacer self-aligned quadruple patterning (SAQP) process and a line layout.

As semiconductor devices continue to shrink in size, exposure techniques using extreme ultraviolet (EUV) with a short wavelength of 13.5 nm have been proposed. However, the above exposure technique cannot be used for mass production and requires high equipment costs. Therefore, it is currently expected to adopt spacer self-aligned double patterning (SADP) technology to overcome the problems of the extreme ultraviolet light exposure technology.

The spacer self-aligned double patterning is a technique of finally removing the spacer by forming a spacer on the sidewall of the first mask pattern and forming a second mask pattern between the spacers. By self-aligned double patterning, the resulting line pitch can be reduced to half the line pitch of a typical lithography process.

In addition, it is currently proposed on the basis of self-aligned double patterning. Further reducing the line spacing of the spacer self-aligned quadruple patterning technique. The spacer self-aligned quadruple patterning is a technique of performing two self-aligned double patterning. However, lines fabricated using self-aligned quadruple patterning techniques generally have too small a separation distance between the ends of the lines, resulting in an improper electrical connection between the lines. In order to solve the above problems, many lithography processes are currently used in the spacer self-aligned quadruple patterning process. Although the multiple lithography process can effectively increase the separation distance between the ends of the lines, it also increases the manufacturing cost and the complexity of the process.

Based on the above, there is a need for a process technique that can effectively increase the separation distance between the ends of the lines in the case of using a smaller number of lithography processes.

The present invention provides a line layout and a line layout method capable of effectively increasing the separation distance between line ends in the case of using a smaller number of lithography processes.

The present invention provides a method for self-aligned quadruple patterning of a spacer of a line layout, the method of wiring layout comprising: forming a core layer, the core layer comprising: a body layer including a tip portion extending along the first direction; a first auxiliary layer connected to the end portion of the body layer; and two second auxiliary layers connected to both sides of the first auxiliary layer and extending along the second direction. A first spacer is formed on a sidewall of the core layer. The core layer is removed. Forming a second spacer wall and a third spacer wall, the sidewall of the first spacer, the second spacer being located in the third spacer, and having two corresponding to the second auxiliary layer First projection. shift In addition to the first spacer. A portion of the second spacer and a portion of the first protrusion are removed to form a first line and a second line. Removing a portion of the third spacer and performing a pattern transfer process to form a third line and a fourth line, the first line and the second line being located between the third line and the fourth line .

In an embodiment of the invention, the step of removing a portion of the second spacer and a portion of the first projection and the step of removing a portion of the third spacer comprise: removing the U-shaped portion The second spacer, the third spacer, and the first protrusion of the predetermined area. The predetermined area covers a portion of the second spacer wall and a portion thereof surrounding the second spacer wall corresponding to the bottom and lower sidewalls of the first auxiliary layer, and a portion of the first protrusion.

In an embodiment of the invention, each of the second auxiliary layers includes: two first extensions connected to both sides of the first auxiliary layer and extending along the second direction; and two a second extension connected to both sides of the first auxiliary layer and extending along the second direction, wherein the second extension is located at a bottom of the first auxiliary layer.

In an embodiment of the invention, the third gap wall further has two second protrusions extending along the second direction and protruding toward the second gap wall.

In an embodiment of the invention, the step of removing a portion of the second spacer and a portion of the first projection and the step of removing a portion of the third spacer comprise: removing the U-shaped portion The second spacer, the third spacer, and the second protrusion of the predetermined area; wherein the predetermined area covers the first a portion of the second and second portions of the bottom and lower sidewalls of the auxiliary layer, the third spacer, and a portion of the second projection, and extending in the first direction to the first The edge of a bulge.

The present invention further provides a circuit layout, including: a first line, a second line, a third line, and a fourth line, wherein the second line and the third line are located in the first line and the fourth line And the first line to the fourth line respectively extend along the first direction; wherein the end of the second line and the end of the third line respectively have an extension along the second direction The first projection. The first protrusion of the end section of the second line protrudes toward the first line. The first protrusion of the end section of the third line protrudes toward the fourth line.

In an embodiment of the invention, the distance between the end point of the end of the first line and the end point of the end of the second line in the second direction is greater than or equal to the first line, respectively. a width, and a sum of a distance between an end point of the first line start segment and an end point of the second line start segment, an end point of the end of the fourth line and the third line The distance between the end points of the end segments in the second direction is greater than or equal to the width of the fourth line, and the end points of the fourth line start segment and the end of the third line start segment, respectively. The sum of the separation distances of the points.

In an embodiment of the invention, the distance between the end point of the end of the second line and the end point of the end of the third line in the second direction is greater than the end of the first line a distance between an end point of the segment and an end point of the end of the second line in the second direction, and greater than an end point of the end of the third line and a last end of the fourth line The separation distance of the endpoints in the second direction.

In an embodiment of the invention, the end of the first line and the end of the fourth line respectively have two second protrusions extending along the second direction. The two second protrusions of the end section of the first line protrude toward the second line. The two second projections of the end section of the fourth line protrude toward the third line.

The present invention further provides a circuit layout, including: a first line to a fourth line in which the last segments are stepped, and the second line and the third line are located between the first line and the fourth line And the number of steps of the second line and the end of the third line is less than the number of steps of the end of the first line and the fourth line.

In an embodiment of the invention, the step of the end of the first line and the step of the end of the second line are the same, and the step of the second line and the third line The ladder at the end is opposite.

In an embodiment of the invention, the first line to the fourth line respectively extend along the first direction. The end of the second line and the end of the third line respectively have two first protrusions extending along the second direction and protruding toward the first line and the fourth line . The end of the first line and the end of the fourth line respectively have two second protrusions extending along the second direction and protruding toward the second line and the third line .

Based on the above, the present invention can effectively increase the separation distance between the ends of the lines by forming a core layer having an auxiliary layer protruding toward both sides, in the case of using a smaller number of lithography processes.

The above described features and advantages of the invention will be apparent from the following description.

10, 110‧‧‧ core layer

12. 112‧‧‧ body layer

14, 114‧‧‧ end

16, 116‧‧‧ first auxiliary layer

18, 118‧‧‧Second auxiliary layer

20, 120‧‧‧ first gap wall

22, 122‧‧‧ second clearance wall

24, 124‧‧‧ third clearance wall

25, 125‧‧‧ isolated island

28‧‧‧First scheduled area

28a, 128a‧‧‧ bottom area

28b, 128b‧‧‧Extension

29, 129‧‧‧Predetermined area

30, 130‧‧‧ first line

32, 132‧‧‧ second line

34, 134‧‧‧ third line

36, 136‧‧‧ fourth line

38, 138‧‧‧ solder pads

118a‧‧‧First Extension

118b‧‧‧Second extension

126, 126a, 126b‧‧‧ first bulge

127, 127a, 127b‧‧‧ second bulge

128‧‧‧Second Schedule

D1‧‧‧ first direction

D2‧‧‧ second direction

L1~L11, L14~L19‧‧‧ length

W1‧‧‧Width

P1a~P2a, P23, P3, P4a~P5a, P1b~P2b, P4b~P5b‧‧‧ separation distance

1A to 1G are schematic top views of a flow of a line layout method according to a first embodiment of the present invention.

2A to 2F are schematic cross-sectional views taken along line A-A and line B-B of Figs. 1A to 1F, respectively.

3A to 3G are top schematic views showing the flow of a line layout method according to a second embodiment of the present invention.

4A to 4F are schematic cross-sectional views taken along line C-C and line D-D of Figs. 3A to 3F, respectively.

1A to 1G are schematic top views of a flow of a line layout method according to a first embodiment of the present invention. 2A to 2F are schematic cross-sectional views taken along line A-A and line B-B of Figs. 1A to 1F, respectively. 3A to 3G are top schematic views showing the flow of a line layout method according to a second embodiment of the present invention. 4A to 4F are schematic cross-sectional views taken along line C-C and line D-D of Figs. 3A to 3F, respectively.

The first embodiment and the second embodiment of the present invention are self-aligned by spacers A four-patterned approach to form the line layout.

Referring to FIG. 1A and FIG. 2A simultaneously, the core layer 10 is first formed. In an embodiment, the core layer 10 may be formed by first forming a core material layer (not shown) and then forming it by photoresist trimming. The core layer 10 includes a body layer 12, a first auxiliary layer 16, and two second auxiliary layers 18. The body layer 12 includes a tip portion 14 that extends along a first direction D1. The first auxiliary layer 16 is connected to the distal end portion 14 of the body layer 12. The two second auxiliary layers 18 are connected to both sides of the first auxiliary layer 16 and extend along the second direction D2. The first direction D1 is, for example, the Y direction; the second direction D2 is, for example, the X direction. The width W1 of the main body layer 12 is, for example, 40 nm to 50 nm. The length L1 of the distal end portion 14 of the main body layer 12 in the first direction D1 is, for example, 100 nm to 3000 nm. The length L2 of the first auxiliary layer 16 in the first direction D1 is greater than the width W1 of the body layer 12, for example, 150 nm to 400 nm, and the length L3 in the second direction D2 is greater than the width W1 of the body layer 12, for example, 100 nm to 500 nm. . The length L4 of the second auxiliary layer 18 in the first direction D1 is, for example, 30 nm to 60 nm, and the length L5 in the second direction D2 is, for example, 100 nm to 500 nm. The length of the first auxiliary layer 16 and the second auxiliary layer 18 in the second direction D2 is not limited to the above-listed range, and can be freely adjusted according to the line spacing distance to be formed. The material of the core layer 10 is, for example, a positive photoresist, a negative photoresist or any other material that can be patterned through a patterning process. The core layer 10 is formed, for example, by forming a core material layer (not shown) and patterning the core material layer. The patterning process may first utilize yellow light, extreme ultraviolet light, ArF excimer laser, KrF excimer laser, etc., to expose the formed core material layer, and then develop.

Referring to FIG. 1B and FIG. 2B simultaneously, the first spacer 20 is formed on the sidewall of the core layer 10. The material of the first spacer 20 is, for example, cerium oxide, tantalum nitride or a combination thereof. The width of the first spacer 20 is, for example, 15 nm to 30 nm. The first spacer 20 is, for example, first formed with a layer of spacer material (not shown), and then an anisotropic etching process is utilized.

Please refer to FIG. 1C and FIG. 2C at the same time, after which the core layer 10 is removed. The method of removing the core layer 10 may be a dry stripping process, a dry etching process, a wet stripping process, or a wet etching process.

Referring to FIG. 1D and FIG. 2D simultaneously, the second spacer 22 and the third spacer 24 are formed on the sidewall of the first spacer 20 . The second spacer 22 and the third spacer 24 are respectively a loop. The second spacer 22 is located in the third spacer 24 and has two first projections 26 corresponding to the second auxiliary layer 18 (Fig. 1A). The material of both the second spacer 22 and the third spacer 24 may be different from the material of the first spacer 20. The material of the second spacer 22 and the third spacer 24 includes ceria, tantalum nitride or a combination thereof. The widths of the second spacers 22 and the third spacers 24 are, for example, 15 nm to 30 nm, respectively. The widths of the first spacer 20, the second spacer 22, and the third spacer 24 may be the same or different from each other. In an embodiment, the second width of the second spacer 22 is greater than or equal to the length L4 of the second auxiliary layer 18 in the first direction D1. Thereby, it is possible to ensure that no gap is present in the first projections 26. The second spacer 22 and the third spacer 24 may be formed in the same manner as the first spacer 20 is formed.

Please refer to FIG. 1E and FIG. 2E at the same time, and then perform an etching process to shift In addition to the first spacer 20 . When the material of the first spacer 20 is different from the material of the second spacer 22 and the third spacer 24, the anisotropic etching process can be performed by directly transmitting the difference in etching rate between the materials.

Referring to FIG. 1E and FIG. 2E simultaneously, part of the second spacer 22, a portion of the third spacer 24, and a portion of the first protrusion 26 in the first predetermined area 28 and the second predetermined area 29 are removed. The two ends of the second gap wall 22 circuit and the two ends of the third gap wall 24 circuit are cut. Specifically, an etching process is performed to remove the second spacer 22, the third spacer 24, and the first protrusion 26 in the first predetermined region 28, and the second spacer in the second predetermined region 29. 22 and a third spacer 24 .

The first predetermined zone 28 is, for example, U-shaped, which corresponds to the first end of the second spacer 22 and the third spacer 24 circuit and a portion of the first projection 26. More specifically, the first predetermined area 28 includes a bottom area 28a and an extended area 28b. The bottom region 28a extends in the second direction D2; the extension region 28b extends in the first direction D1. The bottom portion 28a of the first predetermined area 28 needs to completely cover the second spacer 22 corresponding to the bottom of the first auxiliary layer 16 (Fig. 1B) and a portion of the third spacer 24 around it to ensure that there is a line between the formed lines. Sufficient separation distance. The extension 28b of the first predetermined area 28 covers a portion of the second spacer 22 corresponding to the bottom and lower sidewalls of the first auxiliary layer 16 (FIG. 1B) and a portion of the third spacer 24 around it, and a portion of the first projection 26. It should be noted that the extension 28b of the first predetermined area 28 must cross the first protrusion 26 in the first direction D1 to ensure that the first protrusion 26 can be disconnected, thereby avoiding the subsequent pads. Short circuit between lines caused by process error. First As long as the predetermined area 28 satisfies the above conditions, the size thereof can be arbitrarily adjusted as needed. The length L6 of the bottom region 28a of the first predetermined region 28 in the first direction D1 is, for example, 75 nm to 200 nm, and the length L7 in the second direction D2 is, for example, 300 nm to 1500 nm. The length L8 of the extension region 28b of the first predetermined region 28 in the first direction D1 is, for example, 130 nm to 500 nm, and the length L9 in the second direction D2 is, for example, 50 nm to 450 nm. The second predetermined area 29 corresponds to the second gap 22 and the second end of the third gap wall 24 circuit, and is not particularly limited as long as it can separate the lines from each other. The length L10 of the second predetermined region 29 in the first direction D1 is, for example, 150 nm to 300 nm, and the length L11 in the second direction D2 is, for example, 100 nm to 150 nm.

Referring to FIG. 1F and FIG. 2F simultaneously, after the removal step, pattern transfer is performed to form the first line 30, the second line 32, the third line 34, and the fourth line 36. The adjustment according to the position of the extension region 28b of the removal region 28 or the length L9 in the second direction D2 may be further included in addition to the formation of the first line 30 to the fourth line 36 after the above-described removal step and pattern transfer. The first projection 26a or / and the island 25. The distance between the end point of the end portion of the formed first line 30 and the end point of the end portion of the formed second line 32 in the second direction D2, and the end of the end portion of the formed third line 34 The distance P2a between the point and the end point of the end portion of the formed fourth line 36 in the second direction D2 is greater than or equal to the sum of the width of the first spacer 20 and the width of the third spacer 24. The material of the first line 30 to the fourth line 36 includes a metal or a metal alloy such as copper or a copper-nickel alloy.

Referring to FIG. 1G, further forming with the first line 30 to the fourth line respectively A plurality of pads 38 connected by a path 36. The material of the pad 38 includes a metal or a metal alloy such as copper or a copper-nickel alloy. The pad 38 is formed by first forming a pad material layer (not shown) by chemical vapor deposition or physical vapor deposition, and then using a lithography and etching process.

Referring to FIG. 1F, FIG. 2F and FIG. 1G simultaneously, the circuit layout of the first embodiment of the present invention includes first to third lines 30 to 36 and a plurality of pads 38 connected to the first line 30 to the fourth line 36. . The first line 30 to the fourth line 36 respectively extend along the first direction D1. The second line 32 and the third line 34 are located between the first line 30 and the fourth line 36. In an embodiment, the end of the second line 32 and the end of the third line 34 respectively have two first protrusions extending along the second direction D2 and protruding toward the first line 30 and the fourth line 36. Part 26a. In another embodiment, there is an island 25 between the first projection 26a and the first line 32 and between the first projection 26a and the fourth line 36, respectively. The length of the first projection 26a in the second direction D2 and the length in the first direction D1 correspond to the second auxiliary layer 18, respectively. Both the first projection 26a and the island 25 are one of the features of the wiring layout formed by the method of self-aligned quadruple patterning of the spacers in the present invention. When the pad 38 is subsequently formed, even if the longitudinal misalignment occurs, the pad 38 connecting the second line 32 is brought into contact with the first protrusion 26a, or the pad 38 and the island 25 connecting the first line 30 are caused. When in contact, the process is still within the allowable range. Therefore, the presence of the first projections 26a and the islands 25 can enhance the tolerance of the process.

The end portions of the first line 30 to the fourth line 36 connected to the pad 38 are each stepped. The number of steps of the second line 32 and the third line 34 is less than the first line The number of steps in the end of the road 30 and the fourth line 36. The steps of the second line 32 and the last stage of the third line 34 are, for example, first order, and the steps of the last line of the first line 30 and the fourth line 36 are, for example, second order. In other words, the number of steps of the second line 32 and the third line 34 is less than the first stage of the first line 30 and the fourth line 36. In addition, the steps of the first line 30 and the end of the second line 32 are connected to the pad 38, for example, in the -X direction; the steps of the third line 34 and the end of the fourth line 36 are connected to the pad 38, for example, in the X direction. . In short, the step of the last stage of the first line 30 is the same as the step of the end of the second line 32, and the step of the last stage of the third line 34 is the same as the step of the last stage of the fourth line 36, but the first two The direction of the opposite is opposite to the trend of the latter two. It is particularly worth mentioning that the step of the end of the second line 32 is opposite to the direction of the step of the last line of the third line 34, so that the end of the end of the second line 32 and the end of the third line 34 The separation distance P23 of the end point in the second direction D2 is greater than the separation distance P1a of the end point of the end section of the first line 30 and the end point of the end section of the second line 32 in the second direction D2, and is greater than the third The end point of the end of the line 34 and the end point of the end of the fourth line 36 are spaced apart by a distance P2a in the second direction D2. Therefore, sufficient space can be provided to connect the pad 38 connecting the second line 32 and the pad 38 connecting the third line 34, thereby increasing the tolerance of the process.

In addition, the spacing P1a of the end point of the end section of the first line 30 and the end point of the end section of the second line 32 in the second direction D2 is greater than or equal to the width of the first line 30, and the first line 30. The sum of the distances between the endpoints of the start segment and the endpoints of the start segment of the second line 32 is the distance P1b. The distance P2a between the end point of the end of the fourth line 36 and the end point of the end of the third line 34 in the second direction D2 is greater than It is equal to the sum of the width of the fourth line 36 and the distance P2b between the end point of the start line of the fourth line 36 and the end point of the start line of the third line 34. The separation distance P1a is, for example, 65 nm to 465 nm. The separation distance P2a is, for example, 65 nm to 465 nm. The separation distances P1b and P2b are, for example, 15 nm to 30 nm. Since the separation distances P1a, P2a are larger than the separation distances P1b, P2b, sufficient process tolerance can be provided when the pad 38 is formed.

A second embodiment of the present invention will be described below. In the following description, the description of the same or similar members as the first embodiment will be omitted.

Referring to FIG. 3A and FIG. 4A simultaneously, the core layer 110 is first formed. The core layer 110 includes a body layer 112, a first auxiliary layer 116, and two second auxiliary layers 118. The body layer 112 includes a tip portion 114 that extends along a first direction D1. The first auxiliary layer 116 is connected to the end portion 114 of the body layer 112. Different from the first embodiment, the two second auxiliary layers 118 include two first extensions 118a and two second extensions 118b. The two first extensions 118a are connected to both sides of the first auxiliary layer 116 and extend along the second direction D2. The two second extensions 118b are connected to both sides of the first auxiliary layer 116 and extend along the second direction D2, wherein the first extension 118a is located at the sidewall of the first auxiliary layer 116; the second extension 118b is located at the first The bottom of the side wall of the auxiliary layer 116. The length L14 of the first extension portion 118a in the first direction D1 is, for example, 30 nm to 60 nm, and the length L15 in the second direction D2 is, for example, 100 nm to 500 nm. The length L14a of the second extension portion 118b in the first direction D1 is, for example, 150 nm to 200 nm, and the total length L14b of the second extension portion 118b and the first auxiliary layer 116 in the second direction D2 is, for example, 300 nm to 1500 nm. In a In an embodiment, the length L14a of the second extension portion 118b in the first direction D1 is greater than or equal to the length L14 of the first extension portion 118a in the first direction D1. Further, the lengths of the first auxiliary layer 116, the first extending portion 118a, and the second extending portion 118b in the second direction D2 are not limited to the above-exemplified ranges, and may be freely adjusted according to the line spacing distance to be formed. In addition, although the second auxiliary layer 118 has two sets of extensions in the present embodiment, the present invention is of course not limited thereto, and those skilled in the art can naturally select two or more extensions as needed. . In addition to the above differences, the material type of the core layer 110, the size range of the main body layer 112, the size range of the first auxiliary layer 116, and the formation method of the core layer 110 may be the same as those of the first embodiment, and Let me repeat.

Referring to FIG. 3B, FIG. 4B, FIG. 3C, FIG. 4C, FIG. 3D, and FIG. 4D, the step of forming the first spacer 120 and the removal of the core layer 110 are sequentially performed in the same manner as the first embodiment. Steps of forming the second spacer 122 and the third spacer 124. Referring to FIG. 3B, FIG. 3D, and FIG. 4B and FIG. 4D, in one embodiment, the second width of the second spacer 122 is greater than or equal to the length L14 of the first extension 118a in the first direction D1, and each of the first The separation distance P3 of the one extension portion 118a and the adjacent second extension portion 118b in the first direction D1 is less than or equal to the sum of the double width of the first spacer 120 and the second width of the third spacer 124. Thereby, it is ensured that no gap is present between the two first projections 126 and the two second projections 127. It should be noted that the third spacer 124 further has two second protrusions 127 extending along the second direction D2 and protruding toward the second spacer 122. In addition to this, regarding the material of the first spacer 120, the width of the first spacer 120, The materials of the second spacers 122 and the third spacers 124 and the widths of the second spacers 122 and the third spacers 124 may be the same as those of the first embodiment, and details are not described herein again.

Referring to FIG. 3E, FIG. 3F, FIG. 4E and FIG. 4F simultaneously, a portion of the second spacer 122, a portion of the third spacer 124, and a portion of the second projection 127 are removed in the same manner as the first embodiment. The two ends of the second gap wall 122 loop and the two ends of the third gap wall 124 loop are cut.

Different from the first embodiment, the removed portion is the second spacer 122, the third spacer 124 and the second projection 127 located in the first predetermined region 128 of the U-shape, and located in the second predetermined region. The second spacer 122 of the 129 and the third spacer 124. More specifically, the U-shaped first predetermined area 128 includes a bottom area 128a and an extended area 128b. The bottom region 128a extends in the second direction D2; the extension region 128b extends in the first direction D1. The bottom region 128a of the first predetermined region 128 needs to completely cover a portion of the second spacer 122 corresponding to the bottom of the first auxiliary layer 116 and a portion of the third spacer 124 around it to ensure sufficient spacing between the formed lines. distance. The extension 128b of the first predetermined area 128 covers a portion of the second spacer 122 corresponding to the bottom and lower sidewalls of the first auxiliary layer 116 and its periphery and a portion of the second protrusion 127, and extends in the first direction D1 to the first The edge of a projection 126. It should be noted that the extension 128b of the first predetermined area 128 must traverse at least the second protrusion 127 in the first direction D1, and even extend to the part of the first protrusion 126 to ensure the second protrusion. The portion 127 can be opened in the second direction D2 to avoid short circuits between the lines caused by errors in subsequent pad processes. The first predetermined area 128 can be arbitrarily adjusted as needed as long as the above conditions are satisfied. By forming the first protrusion 126 and the second protrusion 127, the tolerance for performing the step of removing the second spacer 122, the portion of the third spacer 124, and the portion of the second projection 127 can be effectively improved. error. The length L16 of the bottom region 128a of the first predetermined region 128 in the first direction D1 is, for example, 150 nm to 300 nm, and the length L17 in the second direction D2 is, for example, 355 nm to 2455 nm. The length L18 of the extension region 128b of the first predetermined region 128 in the first direction D1 is, for example, 120 nm to 150 nm, and the length L19 in the second direction D2 is, for example, 50 nm to 450 nm. The size range of the second predetermined area 129 is the same as the size range of the second predetermined area 29 of the first embodiment, and details are not described herein again.

Referring to FIGS. 3F and 4F, pattern transfer is then performed to form first line 130, second line 132, third line 134, and fourth line 136. Referring to FIG. 1E, the first line 130 to the fourth line 136 are formed by the above-described removal step and pattern transfer by the adjustment of the position of the extension area 128b of the predetermined area 128 or the length L19 in the second direction D2. In addition, the second line 132 and the third line 134 may further include first protrusions 126a, 126b, respectively; the first line 130 and the fourth line 136 may further include second protrusions 127a, 127b, respectively. In addition, two islands 125 may be further included. Thereafter, referring to FIG. 3G, a plurality of pads 138 respectively connected to the first line 130 to the fourth line 136 are formed. The material of the pad 138 and the method of forming the pad 138 are the same as those of the first embodiment, and will not be described herein.

Referring to FIG. 3F, FIG. 3G and FIG. 4F simultaneously, after the removing step, the end point of the end portion of the formed first line 130 and the end point of the formed second line 132 are in the second The direction D2 has a separation distance P4a; The end point of the end of the third line 134 and the end point of the end of the formed fourth line 136 have a separation distance P5a in the second direction D2. The spacing distance P4a is the process tolerance between the pad 138 connecting the first line 130 and the pad 138 connecting the second line 132. The spacing distance P5a is the process tolerance between the pad 138 connecting the third line 134 and the pad 138 connecting the fourth line 136. Referring to FIG. 1E, the interval distance P4a and the separation distance P5a may be increased by increasing the length L17 of the bottom portion 128a of the first predetermined region 128 in the second direction D2 and the length L19 of the extension region 128b in the second direction D2. .

Referring to FIGS. 3F and 3G simultaneously, the first line to the fourth line 136 formed in accordance with the second embodiment of the present invention are similar to the first line 30 to the fourth line 36 of the first embodiment, and the end of the line is In the form of a step, the number of steps and the number of steps are the same. In an embodiment, the second line 132 and the third line 134 may also have a first protrusion 126a at the end. The difference is that in the second embodiment, the end of the second line 132 and the end of the third line 134 may respectively extend along the second direction D2 and protrude toward the first line 130 and the fourth line 136. First protrusions 126a, 126b. The end of the first line 130 and the end of the fourth line 136 may also have second projections 127a and 127b extending along the second direction D2 and projecting toward the second line 132 and the third line 134, respectively. An island 125 is provided between the second protrusion 127a and the second line 132 and between the second protrusion 127a and the third line 134, respectively. The length of the second protrusions 127a and 127b in the second direction D2 is 5 nm to 50 nm, and the length in the first direction D1 is 15 nm to 60 nm. In an embodiment, the length of the first protrusions 126a and 126b in the second direction D2 is large. The length of the second protrusion 127a in the second direction D2.

The distance between the ends of the end portions of the first line 130, the second line 132, the third line 134, and the fourth line 136 connected to the pad 138 is much larger than the first line 130 and the second line that are not connected to the pad 138. 132. The distance between the end points of the initial segments of the third line 134 and the fourth line 136, and the end portions of the first line 130 to the fourth line 136 are stepped, and the second line 132 and the third line 134 are The step of the end section is different from the step of the end of the first line 130 and the fourth line 136, so that even if misalignment occurs, sufficient process tolerance can be provided either in the lateral direction or in the longitudinal direction.

In summary, the present invention can effectively increase the separation distance between the ends of the lines by forming a core layer having an auxiliary layer protruding toward both sides, thereby reducing the distance between the ends of the lines. Manufacturing costs and process complexity. By having the auxiliary layer protruding toward both sides in the core layer, a sufficient distance can be provided in the lateral direction, so that the tolerance for patterning the wiring and forming the pad can be effectively improved. In addition, if a plurality of sets of auxiliary layers protruding toward both sides are formed in the extending direction of the core layer, in addition to providing lateral process tolerance, greater process tolerance can be provided in the longitudinal direction.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

25‧‧‧ Isolated

26a‧‧‧First bulge

30‧‧‧First line

32‧‧‧second line

34‧‧‧ third line

36‧‧‧fourth line

38‧‧‧ solder pads

D1‧‧‧ first direction

D2‧‧‧ second direction

Claims (12)

A method for self-aligned quadruple patterning of a spacer of a line layout, comprising: forming a core layer, the core layer comprising: a body layer comprising a terminal portion extending along a first direction; a first auxiliary layer Connected to the end portion of the body layer; and two second auxiliary layers connected to both sides of the first auxiliary layer and extending along a second direction; forming a first spacer on the core layer a sidewall; removing the core layer; forming a second spacer and a third spacer, the sidewall of the first spacer, the second spacer being located in the third spacer, and having a corresponding Two first protrusions of the second auxiliary layer; removing the first spacer; removing a portion of the second spacer, and a portion of the first protrusions to form a first line and a first a second line; and removing a portion of the third spacer and performing a pattern transfer process to form a third line and a fourth line, the first line and the second line being located in the third line and the fourth line between. A method for self-aligning quadruple patterning of a spacer of a line layout according to claim 1, wherein the step of removing a portion of the second spacer and a portion of the first projections and the removing portion The step of the third spacer includes: removing the second spacer located in a predetermined area of the U-shape, the third spacer, And the first protrusions, wherein the predetermined area covers a portion corresponding to the bottom and lower sidewalls of the first auxiliary layer, the second spacer wall and a portion thereof surrounding the third spacer, and a portion of the first protrusions Out. The method for self-aligning quadruple patterning of a spacer of a line layout according to claim 1, wherein the second auxiliary layer comprises: two first extensions, and two sides of the first auxiliary layer Connecting and extending along the second direction; and two second extensions connected to both sides of the first auxiliary layer and extending along the second direction, wherein the second extensions are located at the first The bottom of the auxiliary layer. The method of self-aligning quadruple patterning of a spacer of a line layout according to claim 3, wherein the third spacer further has a second gap extending along the second direction and protruding toward the second spacer. Two second projections. A method for self-aligning quadruple patterning of a spacer of a line layout according to claim 4, wherein the step of removing a portion of the second spacer and a portion of the first projections and the removing portion The step of removing the third spacer includes: removing the second spacer, a third spacer, and the second protrusions located in a predetermined area of the U-shape, wherein the predetermined area covers the first a portion of the bottom and lower sidewalls of the auxiliary layer, the second spacer and a portion thereof surrounding the third spacer, and a portion of the second projections, and extending to the first projections in the first direction the edge of. A line layout that includes: a first line, a second line, a third line, and a fourth line, the second line and the third line are located between the first line and the fourth line, and the first line to the first The four lines respectively extend along a first direction, wherein the end of the second line and the end of the third line respectively have a first protrusion extending along a second direction, the end of the second line The first protrusion of the segment protrudes toward the first line; and the first protrusion of the end of the third line protrudes toward the fourth line. The circuit layout of claim 6, wherein: the end point of the end of the first line and the end point of the end of the second line are spaced apart in the second direction by a distance greater than or equal to the first a width of the line, and a sum of a distance between an end point of the start segment of the first line and an end point of the start line of the second line; and an end point of the end of the fourth line and the third line The distance between the end points of the last segment in the second direction is greater than or equal to the width of the fourth line, and the distance between the end point of the start line of the fourth line and the end point of the start line of the third line sum. The circuit layout of claim 6, wherein: the end point of the end of the second line and the end point of the end of the third line are spaced apart in the second direction by the distance greater than the first line The distance between the end point of the last segment and the end point of the last segment of the second line in the second direction, and is greater than the end point of the last segment of the third line and the end point of the last segment of the fourth line The separation distance in the second direction. The line layout as described in claim 6 wherein the first line The last segment and the end of the fourth line respectively have two second protrusions extending along the second direction, the two second protrusions of the end of the first line facing the second The line protrudes; and the two second protrusions of the end of the fourth line protrude toward the third line. A circuit layout includes: a first line to a fourth line each having a stepped end, the second line and the third line being located between the first line and the fourth line, wherein the second line The number of steps with the end of the third line is less than the number of steps of the end of the first line and the fourth line. The circuit layout of claim 10, wherein the step of the end of the first line and the step of the end of the second line are the same, and the step of the second line and the third line The ladder of the last paragraph is opposite. The circuit layout of claim 10, wherein the first line to the fourth line respectively extend along a first direction; the last stage of the second line and the last end of the third line respectively have an edge Two first protrusions extending in a second direction and protruding toward the first line and the fourth line; and a last section of the first line and a last section of the fourth line respectively having along the first Two second protrusions extending in two directions and protruding toward the second line and the third line.