TWI558827B - Shielding device using for treating surfaces of plasma reaction chamber - Google Patents

Description

Shielding device for surface treatment of plasma reaction chamber components

This invention relates to a screening apparatus, and more particularly to a screening apparatus for surface treatment of plasma reaction chamber components.

Today, plasma reaction technology has been widely used in various industries such as the semiconductor manufacturing industry, the display panel manufacturing industry, and the solar cell manufacturing industry. The plasma reactor consists of a plurality of plasma chamber components (materials comprising aluminum or stainless steel) and uses a variety of methods to generate and/or control plasma density, shape, and electrical characteristics in the chamber to cause plasma Reacting with the reactive gas to deposit a desired layer of material on the substrate.

In general, the plasma reactor must be periodically serviced and maintained after a period of operation and the surface of the plasma chamber components processed. The surface treatment method involves the complete removal of the coating on the surface of the plasma reaction chamber component by chemical etching, sand blasting, polishing or turning. However, in order to avoid damage to the local components of the plasma reaction chamber components during surface treatment, it is necessary to take time to remove some of the special purchases or to properly shield the non-treated areas.

For example, when the plasma chamber component contains an exposed copper tube, the copper tube must be removed to avoid copper tube and chemical liquid when surface treated in a chemical manner. Produce a reaction. For another example, when the plasma reaction chamber component is an electrostatic chuck, the ceramic disk on the electrostatic chuck must also be removed first. However, this removal step requires a certain amount of man-hours.

Furthermore, the plasma reaction chamber component typically includes a combined reference surface for interfacing or assembling with another plasma reaction chamber component, a hermetic ring bonding surface, etc., in order to avoid detracting from the size of the combined reference surface or breaking the bond. The surface of the surface must be shielded from the non-treated areas of the plasma chamber components by means of a masking tape or coating prior to surface treatment. However, if the shielding is carried out by means of a visor tape, a large amount of waste will be generated after the surface treatment, resulting in environmental pollution. Moreover, if the coating is carried out by means of a coating, it takes a lot of man-hours to repeatedly apply a plurality of layers of paint in the non-treated areas to form a shielding film having sufficient protective force. In addition, when the masking film is removed, a large amount of waste is also generated, causing environmental pollution.

In view of the above, it is necessary to provide a shielding device for surface treatment of plasma reaction chamber components, which can effectively protect some special components (such as copper tubes or ceramic discs) on the plasma reaction chamber components, so that before surface treatment The special components need not be removed, and the screening device can quickly combine the plasma reaction chamber components and effectively shield the non-treated regions of the plasma reaction chamber components.

In order to solve the above problems of the prior art, it is an object of the present invention to provide a shielding device for surface treatment of a plasma reaction chamber component, the shielding device comprising a plurality of shielding units for respectively shielding the components of the plasma reaction chamber And a non-processing area, and further comprising at least one fixing mechanism for combining the shielding device with the plasma reaction chamber element, thereby enabling the shielding device to quickly and effectively shield the non-processing region of the plasma reaction chamber component.

For the above purposes, the present invention provides a surface for a plasma reaction chamber component a masking device having a surface having a target processing region and at least one non-processing region disposed on the surface of the plasma chamber element for shielding the plasma chamber component At least one non-processing area and exposing the target processing area.

In a preferred embodiment of the present invention, the shielding device comprises: a first shielding unit disposed on a first side of the plasma reaction chamber component for shielding a first surface of the first surface a non-processing area; a second shielding unit disposed on a second side of the plasma reaction chamber element relative to the first surface for shielding a second non-processing area on the second side; and a first a fixing mechanism for combining the first shielding unit and the second shielding unit with the plasma reaction chamber element.

In a preferred embodiment of the present invention, the first fixing mechanism includes a plurality of the screws, and the plasma reaction chamber component, the first shielding unit and the second shielding unit respectively comprise at least one corresponding lock The first hole shielding unit and the second shielding unit are respectively locked to the corresponding first surface or the second surface of the plasma reaction chamber element by a plurality of screws.

In a preferred embodiment of the present invention, the shielding device further includes a third shielding unit and a second fixing unit. The third shielding unit is disposed between the first shielding unit and the second shielding unit. And a third non-processing area for shielding a first non-processing area between the first surface and the second surface, the second fixing mechanism is configured to combine the shielding units with each other.

In a preferred embodiment of the present invention, the third shielding unit is formed to extend from a direction perpendicular to the first shielding unit or the second shielding unit.

In a preferred embodiment of the present invention, the second fixing mechanism includes a plurality of the screws, and the shielding units of the shielding device respectively comprise at least one corresponding locking The holes are locked to each other by a plurality of screws.

In a preferred embodiment of the present invention, the position at which the shielding unit and the plasma reaction chamber element are coupled to each other and the position at which the shielding units are coupled to each other respectively comprise an airtight member.

In a preferred embodiment of the present invention, the shielding device further includes a fourth shielding unit disposed on one of the protrusions of the plasma reaction chamber component for shielding a fourth non-processing area located in the protruding portion .

In a preferred embodiment of the present invention, the shielding device further includes a third shielding unit disposed on the first surface of the plasma reaction chamber component for shielding a protrusion located in the plasma reaction chamber component A third non-treatment zone, wherein the protrusion is formed to project outwardly from the first face of the plasma reaction chamber component.

In a preferred embodiment of the invention, the screening device includes a test head for testing whether the screening device has a gas leak.

10, 20, 30, 40, 50‧‧‧ plasma reactor

11‧‧‧First plasma chamber component

12, 16‧‧‧ copper tube

13‧‧‧Combination datum

14‧‧‧ joint surface

15‧‧‧Second plasma chamber components

100, 200, 300, 400, 500‧‧‧ shielding devices

110, 210, 310, 410, 510‧‧‧ first shielding unit

120, 220, 320, 420, 520‧‧‧ second shielding unit

130, 230, 330, 530‧‧‧ third shielding unit

112, 122, 212, 222, 322, 342‧‧

114, 116, 124, 126, 422, 412‧‧‧ Locking holes

214, 224, 226‧‧‧ airtight components

32‧‧‧Protruding

340‧‧‧4th shielding unit

42‧‧‧Protruding

44‧‧‧Ceramic plate

414‧‧‧Depression

424‧‧‧ Groove

A‧‧‧Target processing area

A1‧‧‧First target processing area

A2‧‧‧second target processing area

B1‧‧‧First non-treated area

B2‧‧‧Second non-treated area

B3‧‧‧ third non-treated area

B4‧‧‧ fourth non-treated area

W1‧‧‧ test head

Figure 1 shows a plasma reactor.

Figure 2 shows a cross-sectional assembled view of a screening device and a plasma reaction chamber component in accordance with a first embodiment of the present invention.

Fig. 3 is a plan view showing the shielding device of Fig. 2.

Fig. 4 is a bottom plan view showing the shielding device of Fig. 2.

Figure 5 is a cross-sectional, assembled view of a masking device and a plasma reaction chamber component in accordance with a second embodiment of the present invention.

Figure 6 is a cross-sectional view showing a masking device and a plasma reaction chamber element in accordance with a third embodiment of the present invention.

Figure 7 is a cross-sectional, assembled view of a masking device and a plasma reaction chamber component in accordance with a fourth embodiment of the present invention.

Figure 8 is a cross-sectional, assembled view of a masking device and a plasma reaction chamber component in accordance with a fifth embodiment of the present invention.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Referring to Figure 1, a plasma reactor 10 is shown. The plasma reactor unit 10 includes a first plasma reaction chamber element 11 and a second plasma reaction chamber element 15 of different configurations. In general, the plasma reactor 10 must be periodically serviced and maintained after a period of operation, and the first plasma chamber element 11 and the second are chemically, physically, and mechanically. The target treatment zone in the plasma reaction chamber element 15 is surface treated. The target treatment zone may be located on the inner and/or outer surface of the first plasma reaction chamber element 11 and the second plasma reaction chamber element 15.

As shown in FIG. 1, the first plasma reaction chamber element 11 and the second plasma reaction chamber element 15 respectively comprise a copper tube 12, 16, and the tubes of the copper tubes 12, 16 are closed at the first Within the plasma reaction chamber element 11 and the second plasma reaction chamber element 15, and the two ports of the copper tubes 12, 16 project beyond one of the side walls of the plasma reaction chamber elements 11, 15. Therefore, before the surface treatment of the plasma reaction chamber elements 11, 15, the exposed ports of the copper tubes 12, 16 must be shielded to avoid the occurrence of copper tubes and chemical liquids when surface treatment is carried out in a chemical manner. anti- should. Furthermore, the first plasma reaction chamber element 11 further comprises a combined reference surface 13 and a bonding surface 14 for combination with another plasma reaction chamber element. A gas-tight element (such as a gas tight ring or gasket) can be placed on the bonding surface 14 to ensure that the first plasma reaction chamber element 11 can be tightly coupled to the other plasma reaction chamber element. Therefore, in order to avoid damaging the size of the combined reference surface 13 of the first plasma reaction chamber element 11 or destroying the surface of the joint surface 14 during surface treatment, the portions must be appropriately shielded.

Referring to Figure 2, there is shown a cross-sectional assembled view of a screening apparatus 100 and a first plasma reaction chamber component 11 in accordance with a first embodiment of the present invention. The first plasma reaction chamber component 11 includes a cavity and at least one target processing region A on the inside of the cavity. The shielding device 100 is disposed substantially around the first plasma reaction chamber component 11 and includes a first shielding unit 110, a second shielding unit 120, and a third shielding unit 130. The first shielding unit 110 is disposed on a first surface of the first plasma reaction chamber component 11 for shielding at least one first non-processing region B1 located on the first surface, that is, the first plasma reaction chamber component The position of the combined reference surface 13 and the joint surface 14 of 11. Moreover, the first shielding unit 110 forms two openings 112 at positions corresponding to the target processing regions A of the first plasma reaction chamber component 11 for exposing the targets of the first plasma reaction chamber component 11 Process area A. The second shielding unit 120 is disposed on a second surface of the first plasma reaction chamber element 11 opposite to the first surface for shielding at least one second non-processing area B2 located on the second surface, and The second shielding unit 120 forms an opening 122 at a position relative to the target processing regions A of the first plasma reaction chamber component 11 for exposing the target processing regions of the first plasma reaction chamber component 11 A. The third shielding unit 130 is disposed between the first shielding unit 110 and the second shielding unit 120 for shielding at least one third non-processing area B3 between the first surface and the second surface, wherein The third non-processing area B3 includes the The port (not labeled) of the exposed copper tube 12 of the first plasma reaction chamber element 11. Therefore, the present invention can effectively shield the non-processing regions B1, B2 of the first plasma reaction chamber element 11 by the shielding device 100 which is combined with each other to surround the first plasma reaction chamber element 11. B3 and expose the target processing area A. Further, since the target processing region A of the first plasma reaction chamber element 11 is surface-treated by chemical, physical, and mechanical means, the shielding device 100 is preferably made of strong and corrosion-resistant Made up of materials. However, it should be noted that although a plurality of non-processing areas B1, B2, and B3 are shown in FIG. 2, the number of the non-processing areas B1, B2, and B3 is not limited thereby, and may be at least a single non-processing area B1. B2, B3; Similarly, the present invention does not limit the number of uses of the first shielding unit 110, the second shielding unit 120, and the third shielding unit 130.

As shown in FIG. 2, the third shielding unit 130 of the shielding device 100 further includes a test head W1 for testing whether the shielding device 100 is combined with the plasma reaction chamber element 11 between the two. Air leaks. It should be understood that the test head W1 may also be disposed on other shielding units of the shielding device 100, such as the first shielding unit 110 or the second shielding unit 120, but is not limited thereto. Similarly, the shielding device of other preferred embodiments of the present invention may also include the test head W1, and details are not described herein.

Please refer to FIG. 3 and FIG. 4 , which respectively show a top view and a bottom view of the shielding device 100 of FIG. 2 , that is, the outer surfaces of the first shielding unit 110 and the second shielding unit 120 are displayed. The shielding device 100 further includes a first fixing mechanism, which can be a plurality of the screws, and a plurality of locking holes are formed around the openings 112 and 122 of the first shielding unit 110 and the second shielding unit 120 respectively. 114, 124, and a plurality of locking holes are also provided at corresponding positions on the first surface or the second surface of the first plasma reaction chamber element 11. With the plurality of the snails The wire can lock the first shielding unit 110 and the second shielding unit 120 to the corresponding first surface or the second surface of the first plasma reaction chamber element 11 respectively. It should be noted that the bonding surface of the first shielding unit 110 and the second shielding unit 120 and the first plasma reaction chamber component 11 may further include a gas-tight component (such as a gas-tight ring or a gasket), so that the The first shielding unit 110 and the second shielding unit 120 are tightly coupled to the first plasma reaction chamber element 11.

As shown in FIG. 2 to FIG. 4, the shielding device 100 further includes a second fixing mechanism, which may be a plurality of the screws, and formed around the first shielding unit 110 and the second shielding unit 120. A plurality of locking holes 116, 126, and corresponding positions on the third shielding unit 130 are also provided with a plurality of locking holes. The first shielding unit 110 and the second shielding unit 120 are respectively locked together with the third shielding unit 130 by the plurality of screws. It should be noted that the bonding surface of the first shielding unit 110 and the second shielding unit 120 and the third shielding unit 130 may further include an airtight component (such as a gas tight ring or a gasket), such that the first shielding The unit 110 and the second shielding unit 120 and the third shielding unit 130 can be tightly coupled.

Referring to Figure 5, there is shown a cross-sectional assembled view of a screening apparatus 200 and a plasma reaction chamber component 20 in accordance with a second embodiment of the present invention. The plasma reaction chamber component 20 includes at least one target processing area A on the inner side of the cavity, at least one first non-processing area B1 on a first side, and at least one on the second side opposite the first side. a second non-processing region B2 and at least one third non-processing region B3 between the first surface and the second surface. The shielding device 200 includes a first shielding unit 210 and a second shielding unit 220. The first shielding unit 210 is disposed on the first surface of the plasma reaction chamber component 20 for shielding the first non-processing area B1, and the first shielding unit 210 further includes an opening 212 for exposing the electricity. The target processing area A of the slurry reaction chamber element 20. The second shielding unit 220 is disposed at the second of the plasma reaction chamber component 20 The second shielding unit 220 further includes an opening 222 for exposing the target processing area A of the plasma reaction chamber component 20, wherein the second shielding unit 220 The outer periphery extends in a vertical direction to form a third shielding unit 230 for shielding the third non-processing area B3.

As shown in FIG. 5, the first shielding unit 210 and the second shielding unit 220 include a hermetic element 214, 224 disposed in the first shielding unit 210 and the second shielding unit 220 and the plasma reaction chamber element. The bonding surface of 20 enables tight bonding between the first shielding unit 210 and the second shielding unit 220 and the plasma reaction chamber element 20. And the third shielding unit 230 formed by the extension of the second shielding unit 220 further includes an airtight member 226 disposed on the bonding surface of the third shielding unit 230 and the first shielding unit 210, so that the first A shielding unit 210 and the third shielding unit 230 can be tightly coupled. It should be noted that the screening device 200 further includes a first fixing mechanism and a second fixing mechanism. The first fixing mechanism is configured to combine the first shielding unit 210 and the second shielding unit 220 with the plasma reaction chamber element 20, and the second fixing mechanism is configured to make the first shielding unit 210 and the second The shielding units 220 are coupled to each other. The first securing mechanism and the second securing mechanism can comprise a plurality of screws or a clamp as described in the first preferred embodiment of the invention.

Referring to Figure 6, there is shown a cross-sectional view of a screening apparatus 300 and a plasma reaction chamber component 30 in accordance with a third embodiment of the present invention. The first face of the plasma reaction chamber component 30 includes a protrusion 32, and a first target processing area A1 positioned on the upper surface of the protrusion 32 and a second target processing located on the second side opposite the first side Area A2. And the plasma reaction chamber component 30 further includes a first non-processing region B1 located on the first surface, a second non-processing region B2 located on the second surface, and the second surface and the second surface The third non-processing area B3, and the bit The fourth non-processing area B4 of the protrusion 32. The shielding device 300 includes a first shielding unit 310, a second shielding unit 320, a third shielding unit 330, and a fourth shielding unit 340. The first shielding unit 310 is disposed on the first surface of the plasma reaction chamber component 30 for shielding the first non-processing region B1, and the first shielding unit 310 corresponds to the plasma reaction chamber component 30. The position of the projection 32 forms an opening. The second shielding unit 320 is disposed on the second surface of the plasma reaction chamber component 30 for shielding the second non-processing area B2, and the second shielding unit 320 further includes an opening 322 for exposing the electricity. The second target processing zone A2 of the slurry reaction chamber component 30. The third shielding unit 330 is disposed between the first shielding unit 310 and the second shielding unit 320 for shielding the third non-processing area B3, wherein the third shielding unit 330 is external to the second shielding unit 320. The circumference is formed to extend in a vertical direction. The fourth shielding unit 340 is sleeved on the protruding portion 30 of the plasma reaction chamber component 30 for shielding the fourth non-processing area B4, and the fourth shielding unit 340 further includes an opening 342 for exposing the The first target processing area A1 of the plasma reaction chamber element 30. In the third embodiment, a shielding unit having a geometric configuration is provided for shielding a portion having a special configuration on the plasma reaction chamber member 30, so that the present invention can effectively shield the plasma reaction chamber. Each non-processing area of component 30.

Referring to Figure 7, there is shown a cross-sectional assembled view of a screening apparatus 400 and a plasma reaction chamber component 40 in accordance with a fourth embodiment of the present invention. The plasma reaction chamber component 40 is an electrostatic chuck having a ceramic disk 44 disposed on a first side thereof and a projection 42 on a second side opposite the first surface. When the electrostatic chuck 40 is subjected to surface treatment, the object is to remove the film layer on the outer side of the electrostatic chuck 40, that is, to perform surface treatment on the target processing region A shown in FIG. Further, in order to avoid damage of the ceramic disk 44 during surface treatment, it is necessary to shield the surface of the ceramic disk 44, that is, to shield the first non-treated region B1 shown in FIG. In addition, the plasma The reaction chamber element 40 also includes a second non-treated region B2 having a geometry on the second side.

As shown in FIG. 7, the shielding device 400 includes a first shielding unit 410 and a second shielding unit 420. The first shielding unit 410 is disposed on the first surface of the plasma reaction chamber component 40, and the first shielding unit 410 further includes a recess 414 for receiving the ceramic disk 44 of the electrostatic chuck 40, such that the first shielding unit 410 A shielding unit 410 can not only shield the ceramic disk 44 but also shield the first non-processing area B1 located on the first surface of the electrostatic chuck 40. The second shielding unit 420 is disposed on the second surface of the plasma reaction chamber component 40, and includes a recess 424 at a position relative to the protruding portion 42 of the electrostatic chuck 40 for receiving the protruding portion 42. The second shielding unit 420 is configured to effectively shield the second non-processing area B2 having a geometric shape.

As shown in FIG. 7 , the first shielding unit 410 and the second shielding unit 420 of the shielding device 400 further include a first fixing mechanism, which may be a plurality of the screws, and the first shielding unit 410 and A plurality of locking holes 412, 422 are formed in the second shielding unit 420, and a plurality of locking holes are also disposed at corresponding positions on the electrostatic chuck 40. The first shielding unit 410 and the second shielding unit 420 are respectively locked to the corresponding first surface or the second surface of the electrostatic chuck 40 by a plurality of screws. It should be noted that the bonding surface of the first shielding unit 410 and the second shielding unit 420 and the electrostatic chuck 40 may further include an airtight component (such as a gas tight ring or a gasket), such that the first shielding unit 410 And the second shielding unit 420 and the electrostatic chuck 40 can be tightly coupled.

Referring to Figure 8, there is shown a cross-sectional assembled view of a screening apparatus 500 and a plasma reaction chamber component 50 in accordance with a fifth embodiment of the present invention. The plasma reaction chamber component 50 includes a first target processing region A1 and a first non-processing region B1 on a first side, a second target processing region A2 and a second non-processing on a second side opposite the first surface. Area B2 and bit in the first A third non-treated region B3 between the face and the second face, wherein the third non-treated region B3 includes a port (not labeled) of the exposed copper tube of the plasma chamber component 50. The shielding device 500 includes a first shielding unit 510 and a second shielding unit 520. The first shielding unit 510 is disposed on the first surface of the plasma reaction chamber component 50 for shielding the first non-processing area B1, and the first shielding unit 510 further includes an opening for exposing the plasma The first target processing area A1 of the reaction chamber element 50 is located on the first side. The second shielding unit 520 is disposed on the second surface of the plasma reaction chamber component 50 for shielding the second non-processing area B2, and the second shielding unit 520 also includes an opening for exposing the plasma The second target processing area A2 of the reaction chamber component 50 is located on the second surface, wherein the outer periphery of the second shielding unit 520 extends in a vertical direction to form a third shielding unit 530 for shielding the plasma reaction. The third non-treated region B3 between the first face and the second face of the chamber member 50, thereby effectively shielding the port of the exposed copper tube located outside the plasma chamber component 50.

In summary, the present invention provides a shielding device for surface treatment of a plasma reaction chamber component, the shielding device comprising a plurality of shielding units for respectively shielding a plurality of non-processing regions of the plasma reaction chamber component, And further comprising at least one fixing mechanism for combining the shielding device with the plasma reaction chamber component, thereby enabling the shielding device to quickly and effectively shield the non-processing region of the plasma reaction chamber component.

11‧‧‧First plasma chamber component

12‧‧‧ copper tube

13‧‧‧Combination datum

14‧‧‧ joint surface

100‧‧‧shading device

110‧‧‧First shielding unit

120‧‧‧second shielding unit

130‧‧‧3rd shielding unit

112‧‧‧ openings

122‧‧‧ openings

A‧‧‧Target processing area

B1‧‧‧First non-treated area

B2‧‧‧Second non-treated area

B3‧‧‧ third non-treated area

W1‧‧‧ test head

Claims (9)

A shielding device for surface treatment of a plasma reaction chamber component, the surface of the plasma reaction chamber component having at least one target processing region and at least one non-processing region, the shielding device being disposed around the plasma reaction chamber component Blocking the at least one non-processing region of the plasma reaction chamber component and exposing the at least one target processing region; wherein the shielding device comprises at least: a first shielding unit disposed on a first side of the plasma reaction chamber component For shielding a first non-processing area on the first side; a second shielding unit disposed on the second side of the plasma reaction chamber element relative to the first side for shielding a a second non-treatment area of the second side; and a first fixing mechanism for combining the first shielding unit and the second shielding unit with the plasma reaction chamber element, respectively. The shielding device of claim 1, wherein the first fixing mechanism comprises a plurality of screws, and the first shielding unit and the second shielding unit respectively comprise at least one corresponding locking hole, by a plurality of The screw respectively locks the first shielding unit and the second shielding unit to the corresponding first surface or the second surface of the plasma reaction chamber component. The shielding device of claim 2, wherein the shielding device further comprises a third shielding unit and a second fixing unit, wherein the third shielding unit is disposed in the first shielding unit and the second shielding unit And a third non-processing area for shielding between the first surface and the second surface, wherein the second fixing mechanism is configured to combine the shielding units with each other. The shielding device of claim 3, wherein the third shielding unit is formed to extend from a direction perpendicular to the first shielding unit or the second shielding unit. The shielding device of claim 3, wherein the second fixing mechanism comprises a plurality of screws, and the shielding units of the shielding device respectively comprise at least one corresponding locking hole, wherein the plurality of screws The shielding units are interlocked with each other. The shielding device of claim 3, wherein the position at which the shielding unit and the plasma reaction chamber element are coupled to each other and the position at which the shielding units are coupled to each other comprise an airtight member. The shielding device of claim 3, wherein the shielding device further comprises a fourth shielding unit sleeved on one of the protrusions of the plasma reaction chamber element for shielding a fourth non-position of the protruding portion Processing area. The shielding device of claim 1, wherein the shielding device further comprises a third shielding unit disposed on the first surface of the plasma reaction chamber component for shielding a component located in the plasma reaction chamber component a third non-treated region of the projection, wherein the projection is formed to project outwardly from the first face of the plasma reaction chamber component. The shielding device of claim 1, wherein the shielding device comprises a test head for testing whether the shielding device has air leakage.