TWI557261B - 先質輸送系統 - Google Patents

先質輸送系統 Download PDF

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Publication number
TWI557261B
TWI557261B TW100113130A TW100113130A TWI557261B TW I557261 B TWI557261 B TW I557261B TW 100113130 A TW100113130 A TW 100113130A TW 100113130 A TW100113130 A TW 100113130A TW I557261 B TWI557261 B TW I557261B
Authority
TW
Taiwan
Prior art keywords
source container
base
gas
valve
container
Prior art date
Application number
TW100113130A
Other languages
English (en)
Chinese (zh)
Other versions
TW201209216A (en
Inventor
凱勒 方杜魯利亞
艾瑞克 席羅
摩希茲Ｅ 佛吉斯
卡爾Ｌ 懷特
Original Assignee
Ａｓｍ美國公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/763,037 external-priority patent/US8986456B2/en
Application filed by Ａｓｍ美國公司 filed Critical Ａｓｍ美國公司
Publication of TW201209216A publication Critical patent/TW201209216A/zh
Application granted granted Critical
Publication of TWI557261B publication Critical patent/TWI557261B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
TW100113130A 2010-04-19 2011-04-15 先質輸送系統 TWI557261B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/763,037 US8986456B2 (en) 2006-10-10 2010-04-19 Precursor delivery system

Publications (2)

Publication Number Publication Date
TW201209216A TW201209216A (en) 2012-03-01
TWI557261B true TWI557261B (zh) 2016-11-11

Family

ID=44885899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100113130A TWI557261B (zh) 2010-04-19 2011-04-15 先質輸送系統

Country Status (3)

Country Link
KR (1) KR101943099B1 (ko)
CN (1) CN102234790B (ko)
TW (1) TWI557261B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11634812B2 (en) 2018-08-16 2023-04-25 Asm Ip Holding B.V. Solid source sublimator
FI129627B (en) * 2019-06-28 2022-05-31 Beneq Oy Nuclear layer cultivation equipment
FI129579B (en) * 2019-06-28 2022-05-13 Beneq Oy Precursor source arrangement and atomic layer growth equipment
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
CN112144114B (zh) * 2020-09-08 2024-08-06 巩义市泛锐熠辉复合材料有限公司 一种前体源气体输送装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199603A (en) * 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US20030232138A1 (en) * 2002-06-17 2003-12-18 Marko Tuominen System for controlling the sublimation of reactants
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
US20050008799A1 (en) * 2003-07-08 2005-01-13 Shizuo Tomiyasu Solid organometallic compound-filled container and filling method thereof
US20050072357A1 (en) * 2002-07-30 2005-04-07 Shero Eric J. Sublimation bed employing carrier gas guidance structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7156380B2 (en) * 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
KR101480971B1 (ko) * 2006-10-10 2015-01-09 에이에스엠 아메리카, 인코포레이티드 전구체 전달 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199603A (en) * 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US20030232138A1 (en) * 2002-06-17 2003-12-18 Marko Tuominen System for controlling the sublimation of reactants
US20050072357A1 (en) * 2002-07-30 2005-04-07 Shero Eric J. Sublimation bed employing carrier gas guidance structures
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
US20050008799A1 (en) * 2003-07-08 2005-01-13 Shizuo Tomiyasu Solid organometallic compound-filled container and filling method thereof

Also Published As

Publication number Publication date
KR101943099B1 (ko) 2019-01-28
TW201209216A (en) 2012-03-01
CN102234790B (zh) 2015-12-16
CN102234790A (zh) 2011-11-09
KR20110117021A (ko) 2011-10-26

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