TWI556467B - Nitride semiconductor structure - Google Patents

Description

Nitride semiconductor structure

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to a well layer using a four-component aluminum indium gallium nitride barrier layer and a three-component indium gallium nitride in a multiple quantum well structure to improve the cause The stress caused by lattice mismatch makes the well layer have a thickness of 3.5 nm to 7 nm, and at the same time provides better carrier limitation to enhance the internal quantum efficiency, so that the semiconductor light-emitting element obtains good luminous efficiency.

Generally, a nitride light-emitting diode system first forms a buffer layer on a substrate, and sequentially epitaxially grows an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer on the buffer layer; and then, uses lithography and etching. The process removes a portion of the p-type semiconductor layer and a portion of the light-emitting layer until a portion of the n-type semiconductor layer is exposed; then, an n-type electrode and a p-type are formed on the exposed portion of the n-type semiconductor layer and the p-type semiconductor layer, respectively An electrode is fabricated to produce a light-emitting diode; wherein the light-emitting layer has a nitride semiconductor multiple quantum well structure (MQW), and the multiple quantum well structure includes a well and a barrier that are alternately arranged in a repeated manner Because the well has relative barriers The lower energy gap of the layer allows each well layer in the above-described multiple quantum well structure to quantum and mechanically limit electrons and holes, causing electrons and holes to be injected from the n-type semiconductor layer and the p-type semiconductor layer, respectively, and Combines in the well layer to emit light particles.

At present, there are about 1 to 30 layers of well layers or barrier layers in a multiple quantum well structure. The barrier layer is usually formed of a material of gallium nitride GaN, and the well layer is composed of indium gallium nitride (InGaN); However, the multiple quantum well structure described above has a lattice mismatch of about 10 to 15% between the indium gallium nitride and the gallium nitride crystal lattice, resulting in a strong stress between the crystal lattices, resulting in a multiple quantum well structure. There is a piezoelectric field (piezo electric field), and in the process of growing indium gallium nitride, the higher the indium content, the larger the piezoelectric field is generated, and the effect on the crystal structure is increased. Large, and the thicker the thickness as the thickness grows, the greater the cumulative stress. When the crystal structure grows beyond a certain critical thickness, causing the crystal structure to no longer withstand this stress, Large defect structures (e.g., V-shaped defects) are produced such that the general well layer has a certain thickness limit, typically about 3 nm.

In addition, the above-mentioned multiple quantum well structure may also cause severe tilt or bending of the energy band due to the existence of a strong polarization electric field, which causes electrons and holes to be separated from each other on both sides of the well layer, so that the electron and hole wave functions The wave function reduces the spatial overlap rate and reduces the radiative recombination rate and internal quantum efficiency (IQE) of electrons and holes.

Nowadays, the inventor is still in the spirit of tirelessness in view of the fact that the above-mentioned conventional nitride semiconductor light-emitting elements have many defects in practical implementation, and are supplemented by their rich professional knowledge and years of practical experience. Improvements have been made, and the present invention has been developed based on this.

The main object of the present invention is to provide a nitride semiconductor structure in which a barrier layer of quaternary aluminum nitride indium gallium and a well layer of ternary indium gallium nitride are used in the light-emitting layer to improve stress caused by lattice mismatch. The effect is that the well layer has a thickness of 3.5 nm to 7 nm, and at the same time provides a better carrier limitation to enhance the internal quantum efficiency.

The present invention further provides a semiconductor light-emitting device comprising at least the nitride semiconductor structure described above such that the semiconductor light-emitting device obtains good light-emitting efficiency.

In order to achieve the above implementation, the present invention provides a nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; and an AlGaN based second type carrier a sub-barrier layer; and a second type doped semiconductor layer, wherein the AlGaN-based second type carrier barrier layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed on the AlGaN basis The second type of carrier barrier layer is between the first type of doped semiconductor layer, and the multiple quantum well structure comprises a plurality of AlInGaN based barrier layers stacked alternately and a plurality of InGaN based well layers.

The present invention further provides a nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; an InGaN based hole providing layer; and a second type doped semiconductor Layer, wherein the luminescent layer is disposed in the first type The doped semiconductor layer is interposed between the InGaN-based hole-providing layer, and the InGaN-based hole-providing layer is disposed between the light-emitting layer and the second-type doped semiconductor layer, and the multiple quantum well structure includes a plurality of AlInGaN layers alternately stacked The barrier layer and the plurality of InGaN-based well layers, and the InGaN-based holes provide an energy gap of the layer greater than that of the InGaN-based well layer of the multiple quantum well structure.

A nitride semiconductor structure comprising: a first type doped semiconductor layer; an AlGaN based first type carrier barrier layer; an luminescent layer comprising a multiple quantum well structure; an AlGaN based (AlGaN based) a second type of carrier barrier layer; and a second type of doped semiconductor layer, wherein the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer, the AlGaN based A type of carrier barrier layer is disposed between the first type doped semiconductor layer and the light emitting layer, and the AlGaN based second type carrier barrier layer is disposed between the second type doped semiconductor layer and the light emitting layer, and is multiple The quantum well structure includes a plurality of AlInGaN based barrier layers stacked alternately and a plurality of InGaN based well layers.

In an embodiment of the invention, the barrier layer has a thickness of 5 nm to 12 nm, and the barrier layer may be doped with a first type dopant having a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^-3 so that the barrier layer can Reduce the carrier shadowing effect to increase the carrier's confinement effect.

Furthermore, in an embodiment of the invention, a hole providing layer may be disposed between the light emitting layer and the second type doped semiconductor layer, and the hole providing layer is indium gallium nitride In _x Ga _1-x N, wherein 0 < x < 1, and the hole providing layer may be doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 , such as magnesium or zinc, preferably magnesium, to increase the concentration of holes.

In an embodiment of the invention, the hole providing layer may be doped with a group of four elements having a concentration of 10 ¹⁷ to 10 ²⁰ cm ^-3 , thereby providing more holes into the light emitting layer, thereby increasing the electron hole. The situation of the combination.

In an embodiment of the invention, the energy supply gap of the hole providing layer is greater than the energy gap of the well layer of the multiple quantum well structure, so that the hole is easy to enter the well layer and the electron escapes, so that the electron and the hole are more easily confined to In the well layer, to increase the probability of electron hole caving.

In an embodiment of the invention, a first type carrier spacer layer is disposed between the light emitting layer and the first type doped semiconductor layer, and the first type carrier blocking layer is preferably Al _x Ga _1-x N. Wherein 0<x<1; and a second type of carrier blocking layer is disposed between the hole providing layer and the second type doped semiconductor layer, and the second type carrier blocking layer is preferably Al _x Ga _1-x N, wherein 0<x<1; thereby, the use of aluminum-containing AlGaN has a higher bandgap than GaN, which not only increases the energy band of the nitride semiconductor, but also limits the carrier to multiple quantum well structures. The probability of electronic hole cladding, and thus the efficiency of luminous efficiency.

In addition, the present invention provides a semiconductor light emitting device comprising at least the nitride semiconductor structure as described above, and a first type electrode and a second electrode which provide electric energy in a two-phase manner; thereby, using a quaternary aluminum nitride indium gallium nitride The barrier layer and the ternary indium gallium nitride well layer have the same indium element characteristics, and the quaternary composition condition can be adjusted to provide a lattice matching composition, so that the barrier layer and the well layer have similar lattice constants, not only Improving the crystal defects of the conventional indium gallium nitride well layer and the gallium nitride barrier layer due to lattice mismatch, and also improving the stress caused by lattice mismatch, so that the nitride semiconductor of the present invention The well layer of the structure has a thickness of 3.5 nm to 7 nm, preferably 4 nm to 5 nm. Meanwhile, by adding the Al element, the barrier of the barrier layer is better, and the electron hole is effectively limited to the well layer. Thereby, thereby improving the internal quantum efficiency, the semiconductor light-emitting element obtains good luminous efficiency.

Furthermore, the barrier layer of quaternary aluminum nitride indium gallium and the well layer of ternary indium gallium nitride can improve the stress caused by lattice mismatch, thereby effectively reducing the piezoelectric field in the multiple quantum well structure. The effect of effectively suppressing the piezoelectric effect and improving the internal quantum efficiency enables the semiconductor light emitting element to obtain better luminous efficiency.

(1) ‧‧‧Substrate

(2) ‧‧‧buffer layer

(3)‧‧‧First type doped semiconductor layer

(31)‧‧‧First type electrode

(4) ‧‧‧First type carrier barrier

(5) ‧‧‧Lighting layer

(51)‧‧‧ Wells

(52) ‧ ‧ barrier layer

(6) ‧‧‧Second type carrier barrier

(7)‧‧‧Second type doped semiconductor layer

(71)‧‧‧Second type electrode

(8) ‧‧‧ hole supply layer

First Figure: A schematic cross-sectional view of a preferred embodiment of a nitride semiconductor structure of the present invention.

Second: A cross-sectional view of a semiconductor light emitting device fabricated in accordance with a preferred embodiment of the present invention.

The object of the present invention and its structural design and advantages will be explained in the light of the preferred embodiments shown in the following drawings, so that the reviewing committee can have a more in-depth and specific understanding of the present invention.

First, in the following description of the embodiments, it should be understood that when a layer (or film) or a structure is disposed on another substrate, another layer (or film), or another structure "on" or "down", "directly" on another substrate, layer (or film), or another structure, Or more than one intermediate layer between the two is arranged in an "indirect" manner, and the reviewing committee can explain the location of each layer with reference to the drawings.

Referring to the first figure, a cross-sectional view of a nitride semiconductor structure according to a preferred embodiment of the present invention is mainly provided with a first type doped semiconductor layer (3) and a second type doped on the substrate (1). a semiconductor layer (7) having a light-emitting layer (5) disposed between the first-type doped semiconductor layer (3) and the second-type doped semiconductor layer (7), the light-emitting layer (5) having a multiple quantum well structure, and The multiple quantum well structure comprises a plurality of well layers (51) and a barrier layer (52) stacked alternately with each other, and each well layer (52) has a well layer (51), and the barrier layer (52) is composed of The chemical formula Al _x In _y Ga _1-xy N is composed of a quaternary material, wherein x and y satisfy the values of 0<x<1, 0<y<1, 0<x+y<1, and the well layer ( 51) is composed of a material represented by the chemical formula In _z Ga _1-z N, wherein 0 < z < 1, and the well layer (51) has a thickness of 3.5 nm to 7 nm, preferably 4 nm to 5 nm, and the barrier layer The layer (52) has a thickness of 5 nm to 12 nm; wherein the barrier layer (52) may be doped with a first type dopant (for example, ruthenium or osmium) having a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^-3 , so that the barrier layer The barrier layer (52) can reduce the carrier shadowing effect to increase the carrier confinement effect.

In addition, the above nitride semiconductor structure may be provided with a hole providing layer (8) between the light emitting layer (5) and the second type doped semiconductor layer (7), wherein the hole providing layer (8) is indium gallium nitride. In _x Ga _1-x N, where 0 < x < 1, and the hole providing layer (8) is doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 , such as magnesium or zinc, preferably Magnesium; further, the hole supply layer (8) may be doped with a group of four elements having a concentration of 10 ¹⁷ to 10 ²⁰ cm ^-3 , preferably carbon, using carbon (group 4A) to replace the pentavalent nitrogen atom, The hole providing layer (8) can have a high hole concentration, thereby providing more holes into the light emitting layer (5), thereby increasing the electron hole bonding; further, the hole providing layer (8) The energy gap is larger than the energy gap of the well layer (51) of the multiple quantum well structure, thereby allowing the holes to enter the well layer and preventing electrons from escaping into the second type doped semiconductor layer (7).

In addition, a first type carrier spacer layer (4) may be disposed between the light emitting layer (5) and the first type doped semiconductor layer (3), and the first type carrier blocking layer (4) is preferably a chemical formula. The material represented by Al _x Ga _1-x N is composed of 0<x<1; and a second type carrier spacer layer is disposed between the hole supply layer (8) and the second type doped semiconductor layer (7) ( 6), and the second type carrier blocking layer (6) is composed of a material represented by a chemical formula of Al _x Ga _1-x N, wherein 0 < x <1; thereby, an energy band gap of AlGaN containing aluminum is used. The high GaN characteristics not only increase the energy band of the nitride semiconductor, but also limit the carrier to multiple quantum well structures, improve the probability of electron hole cladding, and thus increase the luminous efficiency.

Furthermore, a buffer layer (2) may be disposed between the substrate (1) and the first type doped semiconductor layer (3), and the buffer layer (2) is composed of a material represented by the chemical formula Al _x Ga _1-x N , wherein 0<x<1; and the buffer layer (2) is used to improve the lattice mismatch caused by the growth of the first type doped semiconductor layer (3) on the heterogeneous substrate (1), and The material of the buffer layer (2) may be, for example, GaN, InGaN, SiC, ZnO, or the like, and the formation method thereof may be, for example, low temperature epitaxial growth at a temperature of 400 to 900 °C.

When the nitride semiconductor structure according to the above embodiment is actually used, the material of the substrate (1) may be, for example, a sapphire, germanium, SiC, ZnO or GaN substrate, etc., and the first type doped semiconductor layer (3) The material of the second type doped semiconductor layer (7) may be, for example, a magnesium or zinc doped gallium nitride series material, of which the first material is The method for forming the doped semiconductor layer (3), (7) may be, for example, metalorganic chemical vapor deposition (MOCVD); and it is worth noting that the well layer (51) and the barrier are Preferably, the layer (52) is deposited by organometallic vapor deposition or molecular beam epitaxy (MBE), typically using a gas mixture containing a low alkyl indium and a gallium compound; the barrier layers (52) Deposited at a temperature of 850 to 1000 ° C, and the well layers (51) are usually formed at a temperature of 500 to 950 ° C; thereby, since the multiple quantum well structure includes a barrier layer of aluminum indium gallium nitride (52) And a layer of indium gallium nitride (51) having the same indium element, making the barrier (52) The lattice constant of the well layer (51) is relatively similar, which can improve the crystal defect caused by the lattice mismatch caused by the barrier layer of the conventional gallium nitride and the well layer of the indium gallium nitride, and The inter-lattice stress is mainly caused by the mismatch of the lattice constants between the materials, thereby also improving the stress caused by the lattice mismatch, so that the nitride semiconductor structure of the present invention has a well layer (51). It has a thickness of 3.5 nm to 7 nm, preferably 4 nm to 5 nm.

Furthermore, the barrier layer (52) of quaternary aluminum nitride indium gallium and the well layer (51) of indium gallium nitride can improve the stress caused by lattice mismatch, thereby effectively reducing the voltage in the multiple quantum well structure. The generation of the electric field enables the bending and tilting of the band to be considerably improved, thereby achieving the effect of effectively suppressing the piezoelectric effect and improving the internal quantum efficiency.

Referring to the second figure, the nitride semiconductor structure described above can be applied to a semiconductor light emitting device. The second figure is a schematic cross-sectional view of a semiconductor light emitting device fabricated according to a preferred embodiment of the present invention. The semiconductor light emitting device includes at least a substrate (1); a first type doped semiconductor layer (3) disposed on the substrate (1); wherein the material of the first type doped semiconductor layer (3) may be, for example, germanium or germanium a GaN series material; a light-emitting layer (5) disposed on the first type doped semiconductor layer (3), the light-emitting layer (5) having a multiple quantum well structure, and the multiple quantum well structure comprising a plurality of mutual The well layer (51) and the barrier layer (52) are alternately stacked, and each well layer (52) has a well layer (51), and the barrier layer (52) is composed of a chemical formula Al _x In _y Ga _1- A material represented by _xy N, wherein x and y satisfy the values of 0 < x < 1, 0 < y < 1, 0 < x + y < 1, and the well layer (51) is of the chemical formula In _z Ga _1- The material represented by _z N is composed of 0<z<1, and the well layer (51) has a thickness of 3.5 nm to 7 nm, preferably 4 nm to 5 nm; and a second type doped semiconductor layer (7) Disposed on the luminescent layer (5) The material of the second type doped semiconductor layer (7) may be, for example, a magnesium or zinc doped gallium nitride series material; a first type electrode (31) is disposed in the first type doped semiconductor layer by ohmic contact (3) upper; and a second type electrode (71) disposed on the second type doped semiconductor layer (7) in an ohmic contact; wherein the first type electrode (31) and the second type electrode (71) Electrically coupled to provide electrical energy, and may be made of, but not limited to, titanium, aluminum, gold, chromium, nickel, platinum, alloys thereof, and the like; methods of making the processes are well known in the art. The knowledge is not the focus of the present invention and therefore will not be described in detail in the present invention.

In addition, a first type of carrier blocking layer (4) composed of an Al _x Ga _1-x N material may be disposed between the light emitting layer (5) and the first type doped semiconductor layer (3), wherein 0<x<1; and a second type of carrier blocking layer (6) composed of an Al _x Ga _1-x N material may be disposed between the light emitting layer (5) and the second type doped semiconductor layer (7), wherein 0<x<1; thereby, the characteristics of the band gap of AlGaN containing aluminum are higher than that of GaN, which not only increases the energy band range of the nitride semiconductor, but also limits the carrier to the multiple quantum well structure and improves the electronic power. The probability of hole cladding, in turn, achieves the effect of increasing luminous efficiency.

Furthermore, a buffer layer (2) composed of Al _x Ga _1-x N may be disposed between the substrate (1) and the first type doped semiconductor layer (3), wherein 0<x<1, as an improvement The problem that the lattice constant of the one-type doped semiconductor layer (3) grows on the hetero-substrate (1) does not match, and the material of the buffer layer (2) may be, for example, GaN, InGaN, SiC, ZnO or the like.

Therefore, the semiconductor light emitting device of the present invention has a barrier layer (52) of quaternary aluminum nitride indium gallium and a well layer (51) of ternary indium gallium nitride having the above-described nitride semiconductor structure. The characteristics of the same indium element are adjusted by the quaternary composition conditions to provide a lattice-matched composition such that the barrier layer (52) and the well layer (51) The lattice constants are similar, which not only improves the crystal defect caused by the lattice mismatch caused by the barrier layer of the conventional gallium nitride and the well layer of indium gallium nitride, but also the intergranular stress mainly comes from The mismatch of the lattice constants between the materials, thereby improving the stress caused by the lattice mismatch, so that the nitride semiconductor structure of the present invention has a well layer (51) having a thickness of 3.5 nm to 7 nm. Preferably, it is 4 nm to 5 nm; at the same time, the addition of Al element can be improved to provide a better carrier limitation of the barrier layer (52), and the electron hole is effectively confined in the well layer (51), thereby enhancing the interior. The quantum efficiency enables the semiconductor light-emitting element to obtain good luminous efficiency.

Furthermore, the barrier layer (52) of quaternary aluminum nitride indium gallium and the well layer (51) of ternary indium gallium nitride can improve the stress caused by lattice mismatch, thereby effectively reducing the structure of multiple quantum wells. The generation of the medium-voltage field achieves the effect of effectively suppressing the piezoelectric effect and improving the internal quantum efficiency, so that the semiconductor light-emitting element can obtain better luminous efficiency.

In summary, the nitride semiconductor structure and the semiconductor light-emitting device of the present invention can achieve the intended use efficiency by the above-disclosed embodiments, and the present invention has not been disclosed before the application, and has completely complied with the patent. The rules and requirements of the law.爰Issuing an application for a patent for invention in accordance with the law, and asking for a review, and granting a patent, is truly sensible.

The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; those skilled in the art, which are characterized by the scope of the present invention, Equivalent variations or modifications are considered to be within the scope of the design of the invention.

(1) ‧‧‧Substrate

(2) ‧‧‧buffer layer

(3)‧‧‧First type doped semiconductor layer

(4) ‧‧‧First type carrier barrier

(5) ‧‧‧Lighting layer

(51)‧‧‧ Wells

(52) ‧ ‧ barrier layer

(6) ‧‧‧Second type carrier barrier

(7)‧‧‧Second type doped semiconductor layer

(8) ‧‧‧ hole supply layer

Claims (23)

A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; an AlGaN based second type carrier barrier layer; a doped semiconductor layer, wherein the AlGaN-based second type carrier barrier layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed on the AlGaN based second type carrier a barrier layer and the first type doped semiconductor layer, and the multiple quantum well structure comprises a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers; and an InGaN-based hole provided a layer, the InGaN-based hole providing layer is disposed between the light-emitting layer and the AlGaN-based second type carrier barrier layer, and the InGaN-based hole providing layer is doped with a concentration greater than 10 ¹⁷ cm ^-3 The four elements of the family. The nitride semiconductor structure according to claim 1, wherein the thickness of each of the InGaN-based well layers is between 3.5 nm and 7 nm, and the thickness of each of the AlInGaN-based barrier layers is between 5 nm to 12 nm. The nitride semiconductor structure according to claim 1, wherein each of the barrier layers of the AlInGaN layer is doped with a first type dopant having a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^-3 . The nitride semiconductor structure according to claim 1, wherein the InGaN-based hole providing layer is doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 . The nitride semiconductor structure of claim 1, wherein the InGaN-based hole provides a layer having an energy gap greater than an energy gap of the InGaN-based well layer of the multiple quantum well structure. The nitride semiconductor structure according to claim 1, wherein the InGaN-based hole providing layer is doped with a second type dopant, and the second type dopant comprises magnesium or zinc, and the InGaN base The holes provide a layer doped with carbon. A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; an InGaN based hole providing layer; and a second type doped semiconductor layer, wherein the The light-emitting layer is disposed between the first-type doped semiconductor layer and the hole-providing layer of the InGaN-based layer, and the hole-providing layer of the InGaN-based layer is disposed between the light-emitting layer and the second-type doped semiconductor layer. The multiple quantum well structure includes a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers, and the InGaN-based holes provide a layer having an energy gap larger than the InGaN-based well layer of the multiple quantum well structure Energy gap. The nitride semiconductor structure according to claim 7, wherein a barrier layer of AlInGaN-based barrier is located between the hole-providing layer of the InGaN-based layer and the well layer of one of the InGaN-based layers. The nitride semiconductor structure according to claim 7, wherein the thickness of each of the InGaN-based well layers is between 3.5 nm and 7 nm, and the thickness of each of the AlInGaN-based barrier layers is between 5 nm to 12 nm. The nitride semiconductor structure according to claim 7, wherein each of the barrier layers of the AlInGaN layer is doped with a first type dopant having a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^-3 . The nitride semiconductor structure according to claim 7, wherein the InGaN-based hole providing layer is doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 . The nitride semiconductor structure according to claim 11, wherein the InGaN-based hole providing layer is doped with a group of four elements having a concentration greater than 10 ¹⁷ cm ^-3 . The nitride semiconductor structure according to claim 7, wherein the InGaN-based hole providing layer is doped with a second type dopant, and the second type dopant comprises magnesium or zinc, and the InGaN base The holes provide a layer doped with carbon. A nitride semiconductor structure comprising: a first type doped semiconductor layer; an AlGaN based first type carrier barrier layer; an luminescent layer comprising a multiple quantum well structure; an AlGaN based (AlGaN based) a second type of carrier barrier layer; a second type of doped semiconductor layer, wherein the light emitting layer is disposed between the first type of doped semiconductor layer and the second type of doped semiconductor layer, the AlGaN a basic first type carrier barrier layer is disposed between the first type doped semiconductor layer and the light emitting layer, and the AlGaN based second type carrier barrier layer is disposed on the second type doped semiconductor layer Between the light-emitting layers, and the multiple quantum well structure includes a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers; and an InGaN-based hole supply layer, the InGaN-based holes provided The layer is disposed between the luminescent layer and the AlGaN-based second type carrier barrier layer, and the InGaN-based hole providing layer is doped with a group of four elements having a concentration greater than 10 ¹⁷ cm ^-3 . The nitride semiconductor structure according to claim 14, wherein the thickness of each of the InGaN-based well layers is between 3.5 nm and 7 nm, and the thickness of each of the AlInGaN-based barrier layers is between 5 nm to 12 nm. The nitride semiconductor structure according to claim 14, wherein each of the AlInGaN-based barrier layers is doped with a first type dopant having a concentration of 10 ¹⁶ to 10 ¹⁸ cm ^-3 . The nitride semiconductor structure according to claim 14, wherein the InGaN-based hole providing layer is doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 . The nitride semiconductor structure of claim 14, wherein the InGaN-based hole provides a layer having an energy gap greater than an energy gap of the InGaN-based well layer of the multiple quantum well structure. The nitride semiconductor structure according to claim 14, wherein the InGaN-based hole providing layer is doped with a second type dopant, and the second type dopant comprises magnesium or zinc, and the InGaN base The holes provide a layer doped with carbon. A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; an AlGaN based second type carrier barrier layer; a doped semiconductor layer, wherein the AlGaN-based second type carrier barrier layer is disposed between the second type doped semiconductor layer and the light emitting layer, and the light emitting layer is disposed on the AlGaN based second type carrier a barrier layer and the first type doped semiconductor layer, and the multiple quantum well structure comprises a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers; and an InGaN-based hole provided a layer, the InGaN-based hole supply layer is disposed between the light-emitting layer and the AlGaN-based second type carrier barrier layer, and the AlGaN-based second type carrier barrier layer is disposed in the second-type dopant Between the hetero-semiconductor layer and the hole-providing layer of the InGaN-based layer, the InGaN-based hole provides a second type dopant doped with a concentration greater than 10 ¹⁸ cm ^-3 and a carbon concentration greater than 10 ¹⁷ cm ^-3 . A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure; an InGaN based hole providing layer; and a second type doped semiconductor layer, wherein the The light-emitting layer is disposed between the first-type doped semiconductor layer and the hole-providing layer of the InGaN-based layer, and the hole-providing layer of the InGaN-based layer is disposed between the light-emitting layer and the second-type doped semiconductor layer. The multiple quantum well structure includes a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers, and the InGaN-based holes provide a layer having an energy gap larger than the InGaN-based well layer of the multiple quantum well structure The energy gap of the InGaN-based hole provides a layer doped with a second type dopant having a concentration greater than 10 ¹⁸ cm ^-3 and a carbon concentration greater than 10 ¹⁷ cm ^-3 . A nitride semiconductor structure comprising: a first type doped semiconductor layer; an AlGaN based first type carrier barrier layer; an luminescent layer comprising a multiple quantum well structure; an AlGaN based (AlGaN based) a second type of carrier barrier layer; a second type of doped semiconductor layer, wherein the light emitting layer is disposed between the first type of doped semiconductor layer and the second type of doped semiconductor layer, the AlGaN a basic first type carrier barrier layer is disposed between the first type doped semiconductor layer and the light emitting layer, and the AlGaN based second type carrier barrier layer is disposed on the second type doped semiconductor layer Between the light-emitting layers, and the multiple quantum well structure includes a plurality of AlInGaN-based barrier layers alternately stacked and a plurality of InGaN-based well layers; and an InGaN-based hole supply layer, the InGaN-based holes provided a layer is disposed between the luminescent layer and the second type carrier barrier layer of the AlGaN-based layer, and the second-type carrier barrier layer of the AlGaN-based layer is disposed on the hole-providing layer of the InGaN-based layer and the second-type dopant Between the hetero-semiconductor layers, the InGaN-based hole provides a layer of doping Mixed with a second type of dopant having a concentration greater than 10 ¹⁸ cm ^-3 and a concentration greater than 10 ¹⁷ cm ^-3 . A nitride semiconductor structure comprising: a first type doped semiconductor layer; a light emitting layer comprising a multiple quantum well structure, wherein the multiple quantum well structure comprises a plurality of GaN based barriers comprising aluminum and indium stacked alternately a barrier layer and a plurality of GaN-based well layers including indium; a second type of hole-providing layer comprising a GaN-based indium layer, the second-type hole of the GaN-based layer providing a layer doped with a concentration greater than 10 ¹⁸ cm ^{- 3} a second type dopant, and carbon concentration of greater than 10 ¹⁷ cm ^-3; and a second-type doped semiconductor layer, wherein the light emitting layer is disposed on the first electrically-type doped semiconductor layer and the second type GaN-based Between the holes providing layers, the second type of GaN-based second type hole providing layer is disposed on the light emitting layer and the second type doped semiconductor layer.