TWI555767B - 具環氧化堅果殼油之熱介面材料 - Google Patents

具環氧化堅果殼油之熱介面材料 Download PDF

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TWI555767B
TWI555767B TW099136772A TW99136772A TWI555767B TW I555767 B TWI555767 B TW I555767B TW 099136772 A TW099136772 A TW 099136772A TW 99136772 A TW99136772 A TW 99136772A TW I555767 B TWI555767 B TW I555767B
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thermal interface
interface material
epoxy resin
epoxidized
alloy
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阮美如
陳洲明
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漢高智慧財產控股公司
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    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/732—Location after the connecting process
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Description

具環氧化堅果殼油之熱介面材料
本發明係關於一種用於自產熱電子設備將熱傳遞至吸收並耗散所傳遞之熱的散熱器之熱傳導材料。
含有半導體之電子設備在操作期間產生大量熱。所產生之熱量與該半導體的性能有關，工作強度越高的裝置產生之熱越多。為冷卻該等半導體(其等必須經冷卻以獲得可觀的性能)，該設備必須連接散熱器。在操作中，使用期間所產生之熱自該半導體傳遞至散熱器，熱在此被耗散而不產生損害。為最大化自該半導體至該散熱器之熱傳遞，利用一種熱傳導材料，又稱熱介面材料(TIM)。該TIM理想地提供該散熱器與半導體之間之緊密接觸而促進熱傳遞。
目前有多種類型的TIM為半導體製造商所使用，其均具有各自的優點及缺點。對於產生極大量熱之彼等半導體，較佳的熱解決方案係使用焊接材料。焊接材料之實例係純銦，或銦與銀之合金，或錫、銀與銅之合金，或銦、錫與鉍之合金。此等材料提供高導熱性(30至50 W/m-K)，但是其等在應力下易龜裂並脫層。
因此，有利的係提供一種容易處理及施用，並且亦提供高度導熱性及可靠性能之熱介面材料。
本發明係一種用作產熱的含半導體裝置中之熱介面材料之組合物，其包含焊接材料、自堅果殼油衍生之環氧樹脂及/或環氧化二聚脂肪酸。在一實施例中，該等焊接材料係自純銦或純銦與錫及鉍合金之組合製得。該等金屬微粒實質上不含添加鉛。存在自堅果殼油衍生之環氧樹脂及/或環氧化二聚脂肪酸使該組合物更具撓性，從而避免龜裂並增加該散熱器與該半導體間之接觸。觸媒係該TIM之視需要選擇之組分。
在另一實施例中，本發明係一種包含產熱組件、散熱器及根據上述描述之熱介面材料的電子設備。
使用自堅果殼油之環氧樹脂及/或環氧化二聚脂肪酸為該熱介面材料提供最佳範圍之模量。此等環氧化物在該組合物中發揮兩個作用：其等作為該等焊接微粒之助熔劑並形成凝膠狀或黏性物質，其使該等焊接微粒保持物理上連接。此等作用均使得焊接合金能夠原位形成且有助於其留在該熱介面材料內，從而在整個期間維持該阻抗熱安定。
本發明之熱介面材料可與需要熱耗散之任何產熱組件，且尤其係用於半導體裝置中的產熱組件。在該等裝置中，該熱介面材料在產熱組件及散熱器之間形成一層並傳遞欲耗散之熱至該散熱器。該熱介面材料亦可用於包含散熱件之裝置。在該裝置中，一層熱介面材料被置於產熱組件及散熱件之間，且第二層熱介面材料被置於散熱件及散熱器之間。
自堅果殼油衍生之該環氧樹脂包含下述結構之一或二者：
此等樹脂可自新澤西Cardolite公司購置。該單官能基環氧樹脂或該雙官能基環氧樹脂中任一者或任意比之摻合物作為助熔劑用於本發明之焊接粉末合金化及用於形成使該等焊接微粒聚在一起的凝膠狀物質係同等有效的。
該等環氧化二聚脂肪酸係二聚脂肪酸與表氯醇之反應產物。在一實施例中，該環氧化二聚脂肪酸具有下述結構，其中R係以C34H68為代表之34碳鏈：
其可自新澤西CVC化學用品購置。
該等自堅果殼油衍生之環氧樹脂及/或該等環氧化二聚脂肪酸將以2至30重量百分比範圍之間存在於該組合物中(包含該等金屬微粒)。當兩者同時存在時，環氧堅果殼油對環氧二聚脂肪酸之較佳比係約9:1至約1:1。
視需要使用環氧官能性之觸媒，但是可能使用該技術中習知適於聚合或固化環氧官能性的任何觸媒。當存在時，該觸媒將以有效量使用；在一實施例中，有效量係在該組合物的0.2至2重量%範圍內。
適合用於該熱介面組合物中之金屬微粒係可熔的金屬微粒，通常為用作焊料之低熔點金屬或金屬合金。該等金屬之實例包括鉍、錫及銦，且亦可能包括銀、鋅、銅、銻、及塗銀的氮化硼。在一實施例中，該等金屬微粒係選自錫、鉍、或兩者。在另一實施例中，亦存在銦。亦可使用上述該等金屬的合金。
在較佳實施例中，該等金屬微粒係選自錫、鉍、錫：鉍之合金、銦、塗銀的氮化硼及其等混合物。該等金屬微粒及/或合金將以該總組合物的50至95重量百分比範圍之間存在於該組合物中。
在另一實施例中，錫及鉍之共晶合金粉末(熔點138℃，錫對鉍之重量比Sn:Bi為48:52)係與銦粉末(熔點158℃)合併使用，其中銦相對該Sn:Bi合金以1:1之重量比存在。當熱施加於該TIM時，該聚合物樹脂作為助焊劑以促進形成熔點為60℃之In-Sn-Bi共晶合金。該聚合物樹脂輕度交聯而在該In-Sn-Bi合金內形成柔軟的凝膠基質。該熔點為60℃之In-Sn-Bi合金原位形成的證據顯示於圖2中組合物實例F之差式掃描量熱法跡線。跡線1顯示138℃及158℃之兩個清楚的峰值，其等分別可與Sn-Bi及In之熔融有關。在反復加熱偱環(跡線2及3)中，觀察到在約60℃之極強峰值，同時在138℃及158℃之該等峰值幾乎完全消失。該60℃之峰值與In-Sn-Bi共晶合金之形成有關。
在一實施例中(圖示於圖1)，使用兩層熱介面材料之電子組件10包含基板11，該基板11經由互連14附接於矽晶粒12上。該矽晶粒產生熱，該熱通過鄰近該晶粒之至少一側之熱介面材料15傳遞。散熱件16係定位在鄰近該熱介面材料並發揮耗散通過第一層熱介面材料之一部份熱的作用。散熱器17係定位在鄰近該散熱件以耗散任何所傳遞之熱能。熱介面材料18位於散熱件及散熱器之間。熱介面材料18通常較熱介面15厚。
實例
製備包含以下表顯示之重量百分比計的組分之組合物。將本發明之樣品標記為E、F、G、H、及J，且具有適合用於配製之黏性。其等均係由聚合物樹脂之液態反應混合物及高熔點焊接粉末之混合物組成。銦粉末之熔點為158℃，且錫-鉍合金粉末之熔點為138℃。
藉由測量配置於矽晶粒及銅板間之TIM組合物內之熱阻測試該TIM組合物之熱傳導性。加熱該矽晶粒並利用電壓與電流計之組合測量熱輸入。該熱通過該TIM傳遞至該銅板，並藉由熱電偶讀出該銅板上之溫度。自此等數值可計算出熱阻。
當該TIM材料受到自該經加熱之矽晶粒傳遞至該銅板的熱時，該環氧化堅果殼油及/或二聚脂肪酸聚合物樹脂係作為該等焊接材料之助焊劑並促進於In-Sn-Bi合金內形成柔軟的凝膠基質。該合金顯示出熔點為60℃，其被認為係低熔融溫度。該聚合物樹脂變得稍微交聯而形成在In-Sn-Bi合金內形成柔軟的凝膠基質。形成熔點在約60℃至約100℃範圍內之合金對於半導體裝置之高效的熱傳遞特別有用，尤其係對於操作溫度在約70℃至100℃範圍間之彼等。
該等比較樣品係A、B、C、及D且其等係以與本發明樣品相同之方式測試。
該等結果亦公佈於表中並顯示包含足量自堅果殼油衍生之環氧樹脂及/或環氧化二聚脂肪酸之本發明組合物顯示出比該等比較組合物安定及較低的熱阻抗。低熱阻抗對於熱耗散非常重要，係熱介面材料所欲之性質。
*　不含固化劑之組合物樣品E之熱阻抗在150℃下烘烤後顯示出某種程度的熱阻抗降低，惟在該熱偱環試驗後該熱可靠性未改變。
10．．．電子組件
11．．．基板
12．．．矽晶粒
14．．．連接
15．．．熱介面材料
16．．．散熱件
17．．．散熱器
18．．．熱介面材料
圖1係一種具有散熱器、散熱件及熱介面材料之電子組件的側視圖。
圖2係TIM組合物實例F之差式掃描量熱法跡線。
10．．．電子元件
11．．．基板
12．．．矽晶粒
14．．．連接
15．．．熱介面材料
16．．．散熱件
17．．．散熱器
18．．．熱介面材料

Claims (13)

  1. 一種熱介面材料，其包含：(a)自堅果殼油衍生之環氧樹脂，其包含以下結構： 或(b)(a)及環氧化二聚脂肪酸兩者及(c)實質上不含添加鉛之可熔性金屬微粒；及(d)視需要之環氧官能性之觸媒。
  2. 如請求項1之熱介面材料，其中該環氧化二聚脂肪酸具有以下結構 其中R=C34H68。
  3. 如請求項1或2之熱介面材料，其中該自堅果殼油衍生之環氧樹脂係以總組合物的2至30重量百分比範圍內之含量存在。
  4. 如請求項1或2之熱介面材料，其中該環氧化二聚脂肪酸 係以總組合物的2至30重量百分比範圍內之含量存在。
  5. 如請求項1或2之熱介面材料，其中該自堅果殼油衍生之環氧樹脂及該環氧化二聚脂肪酸均係以總組合物的2至30重量百分比範圍內之含量存在，且環氧樹脂對環氧化二聚脂肪酸之重量比為1：1。
  6. 如請求項1或2之熱介面材料，其中該可熔性金屬微粒係以總組合物的40至95重量百分比範圍內之含量存在。
  7. 如請求項6之熱介面材料，其中該金屬微粒係選自錫、鉍、錫：鉍之合金、銦、塗銀的氮化硼及其等混合物。
  8. 如請求項7之熱介面材料，其中錫：鉍之合金具有Sn：Bi=48：52之重量比。
  9. 如請求項8之熱介面材料，其進一步包含In，其中該In係相對於Sn：Bi合金以1：1之重量比存在。
  10. 一種組合件，其包含半導體晶片、散熱件、及位於其間之如請求項1或2之熱介面材料。
  11. 一種組合件，其包含散熱件、散熱器、及位於其間之如請求項1或2之熱介面材料。
  12. 一種原位形成焊接合金之方法，其係由以下步驟組成：(a)將兩或更多種焊接粉末與環氧樹脂摻合，自堅果殼油衍生之該環氧樹脂包含以下結構： 及(b)使該焊接粉末與該環氧樹脂之摻合物經受至少75℃之溫度，該方法之特徵係該原位形成之焊接合金於約60℃下熔融。
  13. 如請求項12之方法，其中該等焊接粉末係銦及莫耳比為1：1的錫及鉍之摻合物。
TW099136772A 2009-10-27 2010-10-27 具環氧化堅果殼油之熱介面材料 TWI555767B (zh)

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