TWI545666B - 光通訊模組 - Google Patents
光通訊模組 Download PDFInfo
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- TWI545666B TWI545666B TW101143658A TW101143658A TWI545666B TW I545666 B TWI545666 B TW I545666B TW 101143658 A TW101143658 A TW 101143658A TW 101143658 A TW101143658 A TW 101143658A TW I545666 B TWI545666 B TW I545666B
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- 230000003287 optical effect Effects 0.000 title claims description 57
- 238000004891 communication Methods 0.000 title claims description 22
- 238000007789 sealing Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 24
- 239000013307 optical fiber Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 1
- 239000000835 fiber Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
Description
本發明關於一種光通訊模組。
目前光通訊模組的透鏡為塑膠材料,而所使用的電路板也為高分子聚合材料,一般使用高分子膠材(如Epoxy或是Acrylic)將透鏡與電路板相結合。因為高分子材料本身就是一個易於吸水的材料,所以整個防水封閉性並不好,在高溫下容易釋放出水分子。對於只是裸晶的發光二極體、光電二極體、晶片來說,因為沒有封裝體的保護,所以整個使用壽命受到水氣的影響將減少,也因此採用其他保護及防水氣的基板及方法刻不容緩。
有鑒於此,有必要提供一種防水性能優良的光通訊模組。
一種光通訊模組,包括載板和基板,所述基板上設置有光收發單元以用於發出和接收光訊號,所述光收發單元朝向所述載板,所述載板上具有反射面和光纖,所述光收發單元發出的光訊號經所述反射面反射後耦合入所述光纖,所述光纖傳輸的光訊號經所述反射面反射後被所述光收發單元接收,所述載板上具有第一密封環,所述基板上具有第二密封環,所述第一密封環和第二密封環相配合將所述光收發單元密封於所述基板和載板之間,所述第一密封環和第二密封環的材料為金屬。所述載板上具有凹槽,所述
基板收容於所述凹槽內。
相較於先前技術,本實施例的光通訊模組採用疏水性的金屬材料製成的第一密封環和第二密封環來配合密封光收發單元,從而具有優良的防水效果,增加了光通訊模組的可靠性。
10‧‧‧光通訊模組
11‧‧‧載板
111‧‧‧第一表面
112‧‧‧第二表面
113‧‧‧凹槽
114‧‧‧反射面
115‧‧‧容置孔
116‧‧‧第一接腳
117‧‧‧臺階部
12‧‧‧基板
121‧‧‧第三表面
122‧‧‧第四表面
126‧‧‧第二接腳
13‧‧‧光收發單元
14‧‧‧晶片
15‧‧‧密封結構
151‧‧‧第一密封環
152‧‧‧第二密封環
20‧‧‧光纖
圖1是本發明實施例光通訊模組的截面示意圖。
圖2是本發明實施例光通訊模組的截面分解示意圖。
下面將結合附圖對本發明實施例作進一步詳細說明。
請參閱圖1及圖2,本發明實施例提供的光通訊模組10包括載板11、基板12、光收發單元13、晶片14、密封結構15和光纖20,光通訊模組10用來實現光纖20與光收發單元13之間光訊號的傳輸。
載板11用來承載基板12、光收發單元13、晶片14、密封結構15和光纖20,光收發單元13和晶片14設置於基板12上,光收發單元13包括發光二極體和光電接收器來發出和接收光訊號,晶片14用來處理光收發單元13發出和接收的訊號,密封結構15用來密封光收發單元13和晶片14。
載板11包括相對的第一表面111和第二表面112,第一表面111向第二表面112凹陷形成凹槽113,凹槽113的一個側面具有反射面114,與反射面114相對的一側具有臺階部117,反射面114與第二表面112之間具有45度的夾角。
凹槽113的臺階部117上設置有平行第二表面112的複數容置孔115,容置孔115位於臺階部117靠近第二表面112的位置,容置孔115
用來收容固定光纖20,從光纖20出射的光入射到反射面114上並被其反射以進入光收發單元13,同樣,光收發單元13發出的光入射到反射面114上並被其反射而進入光纖20中。
凹槽113的臺階部117朝向基板12的位置上設置有複數第一接腳116和第一密封環151,第一密封環151為環狀結構,第一接腳116位於第一密封環151內。第一密封環151的材料為疏水性的金屬,例如鎳、銅、鈦或者其中至少兩種之混合物。
第一密封環151和第二密封環152可以通過濺鍍方式設置於載板11和基板12上。
基板12收容於凹槽113內,基板12可以為電路板,具有相對的第三表面121和第四表面122,第三表面121朝向載板11,光收發單元13和晶片14設置於第三表面121上,從而使光收發單元13朝向凹槽113。第三表面121上對應第一接腳116和第一密封環151分別具有第二接腳126和第二密封環152,第一接腳116與第二接腳126相接觸,第二密封環152位於基板12的邊緣以將設置於基板12上光收發單元13和晶片14包圍,第二密封環152的材料與第一密封環151的材料相同。
第二密封環152與第一密封環151採用過渡液相(Transient Liquid Phase)或電鍍Au-Sn等技術相結合以形成密封結構15,密封結構15將光收發單元13和晶片14密封於載板11與基板12之間。
如果第二接腳126不需要與載板11電連接,可省略載板11上的第一接腳116。
本光通訊模組10採用疏水性的金屬材料製成的密封結構15來密封光收發單元13和晶片14,從而具有優良的防水效果,增加了光通訊模組10的可靠性。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
10‧‧‧光通訊模組
11‧‧‧載板
111‧‧‧第一表面
112‧‧‧第二表面
113‧‧‧凹槽
114‧‧‧反射面
115‧‧‧容置孔
116‧‧‧第一接腳
117‧‧‧臺階部
12‧‧‧基板
121‧‧‧第三表面
122‧‧‧第四表面
126‧‧‧第二接腳
13‧‧‧光收發單元
14‧‧‧晶片
15‧‧‧密封結構
151‧‧‧第一密封環
152‧‧‧第二密封環
20‧‧‧光纖
Claims (8)
- 一種光通訊模組,包括載板和基板,所述基板上設置有光收發單元以用於發出和接收光訊號,所述光收發單元朝向所述載板,所述載板上具有反射面和光纖,所述光收發單元發出的光訊號經所述反射面反射後耦合入所述光纖,所述光纖傳輸的光訊號經所述反射面反射後被所述光收發單元接收,所述載板上具有第一密封環,所述基板上具有第二密封環,所述第一密封環和第二密封環相配合將所述光收發單元密封於所述基板和載板之間,所述第一密封環和第二密封環的材料為金屬,所述載板上具有凹槽,所述基板收容於所述凹槽內。
- 如請求項1所述的光通訊模組,其中,所述第一密封環和第二密封環藉助過渡液相或電鍍Au-Sn結合一體。
- 如請求項1所述的光通訊模組,其中,所述第一密封環位於所述凹槽內。
- 如請求項3所述的光通訊模組,其中,所述凹槽具有臺階部,所述第一密封環位於所述臺階部上。
- 如請求項3所述的光通訊模組,其中,所述載板具有相對的第一表面和第二表面,所述凹槽由所述第一表面向所述第二表面凹陷,所述反射面位於所述凹槽內,所述反射面與所述第二表面之間具有45度的夾角。
- 如請求項4所述的光通訊模組,其中,所述凹槽臺階部上具有用於容納光纖的容置孔。
- 如請求項1所述的光通訊模組,其中,所述金屬為銅、鎳、鈦或者至少兩種之混合物。
- 如請求項1所述的光通訊模組,其中,所述第一密封環和第二密封環藉助濺鍍方式形成於所述載板和基板上。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101143658A TWI545666B (zh) | 2012-11-22 | 2012-11-22 | 光通訊模組 |
US13/906,371 US9099577B2 (en) | 2012-11-22 | 2013-05-31 | Photoelectric module |
Applications Claiming Priority (1)
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TW101143658A TWI545666B (zh) | 2012-11-22 | 2012-11-22 | 光通訊模組 |
Publications (2)
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TW201421587A TW201421587A (zh) | 2014-06-01 |
TWI545666B true TWI545666B (zh) | 2016-08-11 |
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TW101143658A TWI545666B (zh) | 2012-11-22 | 2012-11-22 | 光通訊模組 |
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US (1) | US9099577B2 (zh) |
TW (1) | TWI545666B (zh) |
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JP7033068B2 (ja) * | 2016-09-05 | 2022-03-09 | 古河電気工業株式会社 | レーザ装置及び光源装置 |
DE112017007111B4 (de) * | 2017-02-23 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Sensorelement |
JP7143134B2 (ja) * | 2018-07-26 | 2022-09-28 | 株式会社アドバンテスト | ロードボード及び電子部品試験装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US5479540A (en) * | 1994-06-30 | 1995-12-26 | The Whitaker Corporation | Passively aligned bi-directional optoelectronic transceiver module assembly |
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2012
- 2012-11-22 TW TW101143658A patent/TWI545666B/zh not_active IP Right Cessation
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2013
- 2013-05-31 US US13/906,371 patent/US9099577B2/en not_active Expired - Fee Related
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US20140138812A1 (en) | 2014-05-22 |
US9099577B2 (en) | 2015-08-04 |
TW201421587A (zh) | 2014-06-01 |
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