TWI545096B - A glass substrate manufacturing method, a glass substrate manufacturing apparatus, and a molten glass processing apparatus - Google Patents

A glass substrate manufacturing method, a glass substrate manufacturing apparatus, and a molten glass processing apparatus Download PDF

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TWI545096B
TWI545096B TW103133628A TW103133628A TWI545096B TW I545096 B TWI545096 B TW I545096B TW 103133628 A TW103133628 A TW 103133628A TW 103133628 A TW103133628 A TW 103133628A TW I545096 B TWI545096 B TW I545096B
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molten glass
gas phase
platinum
glass
phase space
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TW103133628A
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Chinese (zh)
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TW201522255A (en
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Shingo Fujimoto
Syunsuke Suzuki
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Avanstrate Inc
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/167Means for preventing damage to equipment, e.g. by molten glass, hot gases, batches
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)

Description

玻璃基板之製造方法、玻璃基板製造裝置、及熔融玻璃處理裝置 Method for producing glass substrate, glass substrate manufacturing device, and molten glass processing device

本發明係關於一種藉由使將玻璃原料熔融而產生之熔融玻璃成形而製造玻璃基板之玻璃基板之製造方法、玻璃基板製造裝置、及處理熔融玻璃之熔融玻璃處理裝置。 The present invention relates to a method for producing a glass substrate in which a glass substrate is produced by molding molten glass obtained by melting a glass raw material, a glass substrate manufacturing apparatus, and a molten glass processing apparatus for processing molten glass.

玻璃基板通常係藉由於由玻璃原料產生熔融玻璃後,經由澄清步驟、均質化步驟,使熔融玻璃成形為玻璃基板而製造。 The glass substrate is usually produced by forming molten glass from a glass raw material, and then molding the molten glass into a glass substrate through a clarification step and a homogenization step.

此外,為了由高溫之熔融玻璃量產品質較高之玻璃基板,期望考慮不使成為玻璃基板之缺陷之主要因素之雜質等自製造玻璃基板之任意裝置混入熔融玻璃。因此,於玻璃基板之製造過程中,接觸於熔融玻璃之構件之內壁必須根據接觸於該構件之熔融玻璃之溫度、所要求之玻璃基板之品質等而由適當之材料構成。例如,於產生熔融玻璃後至供給至成形步驟之期間,熔融玻璃變為高溫狀態,故而進行澄清步驟之澄清裝置、進行均質化步驟之攪拌裝置、及移送熔融玻璃之玻璃供給管係使用耐熱性較高之鉑族金屬而構成。然而,鉑族金屬伴隨熔融玻璃之高溫而容易揮發。並且,有如下之虞:鉑族金屬之揮發物於包圍氣相空間之內壁凝聚而形成凝聚物,該凝聚物之一部分脫離,成為雜質混入熔融玻璃中,而導致玻璃基板之品質降低。 In addition, in order to obtain a high-quality glass substrate having a high-temperature molten glass, it is desirable to mix impurities into the molten glass from any device for manufacturing a glass substrate without considering impurities or the like which are the main factors of the defects of the glass substrate. Therefore, in the manufacturing process of the glass substrate, the inner wall of the member in contact with the molten glass must be composed of a suitable material depending on the temperature of the molten glass contacting the member, the quality of the desired glass substrate, and the like. For example, the molten glass is heated to a high temperature state after the molten glass is produced and supplied to the forming step, so that the clarification device for performing the clarification step, the stirring device for performing the homogenization step, and the glass supply tube for transferring the molten glass use heat resistance. It is composed of a higher platinum group metal. However, the platinum group metal is easily volatilized accompanying the high temperature of the molten glass. Further, there is a case where the volatile matter of the platinum group metal aggregates on the inner wall surrounding the gas phase space to form an aggregate, and one of the aggregates is partially removed, and the impurities are mixed into the molten glass, and the quality of the glass substrate is lowered.

相對於此,已知有如下玻璃熔融爐:其可獲得鉑雜質之混入之虞較少,且簾線條紋或雜質缺點等光學缺陷較少之高品質玻璃(專利文獻1)。 On the other hand, there is known a glass melting furnace which is capable of obtaining a high-quality glass having less enthalpy of inclusion of platinum impurities and having less optical defects such as cord streaks or impurities (Patent Document 1).

該玻璃熔融爐中,設置頂壁而封閉之槽本體之內壁面之下部係由利用鉑或鉑合金所形成之鉑面而形成,且該鉑面係以位於其上端不會露出於熔融玻璃之槽上部氛圍中之位置之方式形成。 In the glass melting furnace, the lower portion of the inner wall surface of the groove body which is provided with the top wall and closed is formed by a platinum surface formed of platinum or a platinum alloy, and the platinum surface is not exposed to the molten glass at the upper end thereof. The position in the upper atmosphere of the trough is formed.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-202444號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-202444

如上述專利文獻1般,只要使熔融玻璃之液面上部之氣相空間之氛圍與鉑族金屬之壁面之接觸面積消失,便不會產生鉑族金屬之揮發。又,認為可藉由縮小與氣相空間之氛圍接觸之鉑族金屬之內壁之接觸面積而減少鉑族金屬之揮發。然而,即便於縮小與氣相空間之氛圍接觸之鉑族金屬之內壁之接觸面積之情形時,亦無法充分地減少自壁面揮發之鉑族金屬。 As in the case of Patent Document 1, as long as the contact area between the atmosphere of the gas phase space on the upper surface of the molten glass and the wall surface of the platinum group metal disappears, volatilization of the platinum group metal does not occur. Further, it is considered that the volatilization of the platinum group metal can be reduced by reducing the contact area of the inner wall of the platinum group metal in contact with the atmosphere of the gas phase space. However, even in the case where the contact area of the inner wall of the platinum group metal which is in contact with the atmosphere of the gas phase space is reduced, the platinum group metal which volatilizes from the wall surface cannot be sufficiently reduced.

因此,本發明之目的在於提供玻璃基板之製造方法、玻璃基板製造裝置、及熔融玻璃之處理裝置,上述玻璃基板之製造方法於在玻璃基板之製造過程中使用且至少一部分由含有鉑族金屬之材料構成之熔融玻璃處理裝置中處理熔融玻璃時,可抑制自由鉑族金屬構成之內壁揮發鉑族金屬,並抑制於氣相空間內揮發掉之鉑金屬之凝聚物之一部分成為雜質而混入熔融玻璃。 Accordingly, an object of the present invention is to provide a method for producing a glass substrate, a glass substrate manufacturing apparatus, and a processing apparatus for molten glass, which are used in a process of manufacturing a glass substrate and at least partially containing a platinum group metal. When the molten glass is treated in the molten glass processing apparatus of the material composition, the platinum group metal which is volatilized on the inner wall of the free platinum group metal is suppressed, and a part of the aggregate of the platinum metal which is volatilized in the gas phase space is suppressed from being mixed into the molten metal. glass.

本發明包含以下形態。 The present invention encompasses the following aspects.

(形態1) (Form 1)

一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;及處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔 融玻璃處理裝置具有由上述熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;且於上述處理步驟中,控制與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a processing step of treating the molten glass in a molten glass processing apparatus, the melting The molten glass processing apparatus has a gas phase space formed by the liquid surface and the inner wall of the molten glass, and a liquid phase of the molten glass, and at least a part of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal And in the above processing step, controlling a ratio of an area of the platinum group metal of the inner wall in contact with the gas phase space to a volume of the gas phase space to reduce a volatilization of the platinum group metal of the molten glass processing apparatus; .

(形態2) (Form 2)

如形態1記載之玻璃基板之製造方法,其係藉由控制上述熔融玻璃之液面水平而控制上述比。 The method for producing a glass substrate according to the first aspect, wherein the ratio is controlled by controlling a level of the liquid surface of the molten glass.

(形態3) (Form 3)

如形態2記載之玻璃基板之製造方法,其係預先求出鉑缺陷數與上述熔融玻璃處理裝置中之上述熔融玻璃之液面水平之相關關係,而將與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平決定為基準液面水平,且上述處理步驟係基於該基準液面水平而控制上述液面水平。 The method for producing a glass substrate according to the second aspect, wherein the correlation between the number of platinum defects and the liquid level of the molten glass in the molten glass processing apparatus is determined in advance, and the above-mentioned tolerance value of the number of platinum defects is determined. The level of the liquid level of the molten glass processing apparatus is determined as the reference level, and the above-described processing steps control the level of the liquid level based on the level of the reference level.

(形態4) (Form 4)

一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔融玻璃處理裝置具有由熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;及成形步驟,其將上述處理步驟中處理過之熔融玻璃成形為平板玻璃(sheet glass);且該玻璃基板之製造方法係預先求出鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將與鉑缺陷數之容許值對應之上述 熔融玻璃處理裝置之液面水平決定為基準液面水平,且上述處理步驟係基於該基準液面水平而控制上述液面水平。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a processing step of treating the molten glass in a molten glass processing apparatus having a molten glass a gas phase space formed by the liquid surface and the inner wall, and a liquid phase of the molten glass, and at least a portion of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal; and a forming step of the above treatment The molten glass treated in the step is formed into a sheet glass; and the method for producing the glass substrate is to determine the correlation between the number of platinum defects and the liquid level of the molten glass processing apparatus in advance, and the number of platinum defects The allowable value corresponds to the above The level of the liquid level of the molten glass processing apparatus is determined as the reference level, and the above-described processing steps control the level of the liquid level based on the level of the reference level.

(形態5) (Form 5)

如形態3或4記載之玻璃基板之製造方法,其中上述處理步驟係基於以包含上述基準液面水平之方式決定之目標液面水平範圍而控制液面水平。 The method for producing a glass substrate according to the above aspect 3, wherein the processing step controls the liquid level based on a target liquid level level determined by including the reference liquid level.

(形態6) (Form 6)

如形態3至5中之任一形態記載之玻璃基板之製造方法,其係藉由控制供給至上述熔融玻璃處理裝置之上述熔融玻璃之量及於上述成形步驟中成形之上述平板玻璃之成形量之至少一者,而控制上述液面水平。 The method for producing a glass substrate according to any one of the aspects 3 to 5, wherein the amount of the molten glass supplied to the molten glass processing apparatus and the amount of the flat glass formed in the forming step are controlled. At least one of them controls the level of the liquid level.

(形態7) (Form 7)

如形態1至6中之任一形態記載之玻璃基板之製造方法,其中於將上述氣相空間之體積設為S[m3],將與上述氣相空間接觸之上述鉑族金屬之面積設為L[m2]時,比S/L為17[m]以上。此時,使熔融玻璃佔有上述氣相空間中之空間整體之50%以上即可。 The method for producing a glass substrate according to any one of the aspects 1 to 6, wherein the volume of the gas phase space is S[m 3 ], and the area of the platinum group metal in contact with the gas phase space is set. is L [m 2], the ratio S / L is 17 [m] or more. In this case, the molten glass may occupy 50% or more of the entire space in the gas phase space.

(形態8) (Form 8)

如形態1至7中之任一形態記載之玻璃基板之製造方法,其中上述比係基於如下條件中之至少一者而決定之值:(1)上述氣相空間中之氧濃度、(2)上述熔融玻璃處理裝置之上述內壁之最高溫度、(3)自上述熔融玻璃釋出至上述氣相空間之氧釋出量、(4)上述熔解步驟中之上述熔融玻璃之最高溫度、與上述處理步驟中之上述熔融玻璃之最高溫度之溫度差、及(5)上述氣相空間中之上述鉑族金屬之蒸氣壓。 The method for producing a glass substrate according to any one of the aspects 1 to 7, wherein the ratio is determined based on at least one of the following conditions: (1) an oxygen concentration in the gas phase space, and (2) a maximum temperature of the inner wall of the molten glass processing apparatus, (3) an amount of oxygen released from the molten glass to the gas phase space, (4) a maximum temperature of the molten glass in the melting step, and the above a temperature difference between the highest temperature of the molten glass in the treatment step, and (5) a vapor pressure of the platinum group metal in the gas phase space.

(形態9) (Form 9)

如形態8記載之玻璃基板之製造方法,其中上述氣相空間中之上述氧濃度係根據上述熔融玻璃中含有之氧化錫之含量而控制。 The method for producing a glass substrate according to the eighth aspect, wherein the oxygen concentration in the gas phase space is controlled based on a content of tin oxide contained in the molten glass.

(形態10) (Form 10)

如形態1至9中之任一形態記載之玻璃基板之製造方法,其中與上述氣相空間接觸之上述內壁之上述鉑族金屬之部分之最高溫度與最低溫度之溫度差為50℃以上。 In the method for producing a glass substrate according to any one of the aspects 1 to 9, the temperature difference between the highest temperature and the lowest temperature of the portion of the platinum group metal of the inner wall in contact with the gas phase is 50° C. or more.

(形態11) (Form 11)

如形態1至10中之任一形態記載之玻璃基板之製造方法,其中上述熔融玻璃處理裝置係進行上述熔融玻璃之澄清之澄清裝置。 The method for producing a glass substrate according to any one of the aspects 1 to 10, wherein the molten glass processing apparatus is a clarification apparatus for clarifying the molten glass.

(形態12) (Form 12)

如形態1至11中之任一形態記載之玻璃基板之製造方法,其中上述處理步驟係上述熔融玻璃之澄清步驟,且將氧氣自上述熔融玻璃釋出至上述氣相空間。 The method for producing a glass substrate according to any one of aspects 1 to 11, wherein the processing step is a clarification step of the molten glass, and oxygen is released from the molten glass to the gas phase space.

(形態13) (Form 13)

如形態1至12中之任一形態之玻璃基板之製造方法,其中於上述液相中上述熔融玻璃流動,且於上述內壁沿著上述熔融玻璃之流動方向形成溫度分佈。 The method for producing a glass substrate according to any one of aspects 1 to 12, wherein the molten glass flows in the liquid phase, and a temperature distribution is formed in the inner wall along a flow direction of the molten glass.

(形態14) (Form 14)

如形態1至13中之任一形態記載之玻璃基板之製造方法,其中上述玻璃基板為顯示器用玻璃基板。 The method for producing a glass substrate according to any one of the aspects 1 to 13, wherein the glass substrate is a glass substrate for a display.

(形態15) (Form 15)

一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;及處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔融玻璃處理裝置具有由上述熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部 分由含有鉑族金屬之材料構成;且於上述處理步驟中,調整與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a treatment step of treating the molten glass in a molten glass processing apparatus having the above a gas phase space formed by the liquid surface and the inner wall of the molten glass, and a liquid phase of the molten glass, and surrounding at least one of the inner walls of the gas phase space And consisting of a material containing a platinum group metal; and in the above-mentioned processing step, adjusting a ratio of an area of the platinum group metal of the inner wall in contact with the gas phase space to a volume of the gas phase space to reduce the molten glass The volatilization of the above platinum group metal of the treatment device.

(形態16) (Form 16)

一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔融玻璃處理裝置具有由熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;及成形步驟,其將於上述處理步驟中處理過之熔融玻璃成形為平板玻璃;且該玻璃基板之製造方法係預先求出鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平決定為基準液面水平,且上述處理步驟係基於該基準液面水平而調整上述液面水平。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a processing step of treating the molten glass in a molten glass processing apparatus having a molten glass a gas phase space formed by the liquid surface and the inner wall, and a liquid phase of the molten glass, and at least a portion of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal; and a forming step, which will be described above The molten glass processed in the treatment step is formed into a flat glass; and the method for producing the glass substrate is to determine the correlation between the number of platinum defects and the liquid level of the molten glass processing apparatus in advance, and the allowable value of the number of platinum defects The liquid level of the corresponding molten glass processing apparatus is determined as the reference liquid level, and the processing step adjusts the liquid level based on the reference liquid level.

(形態17) (Form 17)

如形態1至16中之任一形態記載之玻璃基板之製造方法,其中上述氣相空間中之氧濃度為1%以下。 The method for producing a glass substrate according to any one of the aspects 1 to 16, wherein the oxygen concentration in the gas phase space is 1% or less.

(形態18) (Form 18)

如形態1至17中之任一形態記載之玻璃基板之製造方法,其中上述玻璃基板中之氧化錫之含量為0.01~0.3莫耳%。 The method for producing a glass substrate according to any one of the aspects 1 to 17, wherein the content of the tin oxide in the glass substrate is 0.01 to 0.3 mol%.

(形態19) (Form 19)

一種熔融玻璃處理裝置,其特徵在於:其係包含由熔融玻璃之液面與內壁所形成之氣相空間及熔融玻 璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包括控制部,其控制與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述氣相空間內之上述鉑族金屬之揮發。 A molten glass processing apparatus characterized by comprising a gas phase space formed by a liquid surface and an inner wall of molten glass, and a molten glass a liquid phase of the glass, and at least a portion of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal; and includes a control portion that controls the platinum group metal of the inner wall in contact with the gas phase space The ratio of the area to the volume of the gas phase space described above to reduce the volatilization of the platinum group metal in the gas phase space.

(形態20) (Form 20)

一種熔融玻璃處理裝置,其特徵在於:其係包含由熔融玻璃之液面與內壁所形成之氣相空間及熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包括調整部,其調整與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述氣相空間內之上述鉑族金屬之揮發。 A molten glass processing apparatus comprising: a gas phase space formed by a liquid surface and an inner wall of molten glass; and a liquid phase of molten glass, wherein at least a part of an inner wall surrounding the gas phase space is made of platinum a material of a group metal; and an adjustment portion that adjusts a ratio of an area of the platinum group metal of the inner wall in contact with the gas phase space to a volume of the gas phase space to reduce the above-mentioned gas phase space Volatilization of platinum group metals.

(形態21) (Form 21)

一種熔融玻璃處理裝置,其特徵在於:其係包含由熔融玻璃之液面與內壁所形成之氣相空間及熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包含控制部,其將上述熔融玻璃處理裝置之液面水平控制為預先決定之基準液面水平;且上述控制部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平。 A molten glass processing apparatus comprising: a gas phase space formed by a liquid surface and an inner wall of molten glass; and a liquid phase of molten glass, wherein at least a part of an inner wall surrounding the gas phase space is made of platinum And a control unit that controls a liquid level of the molten glass processing apparatus to a predetermined reference liquid level; and the control unit is based on the number of platinum defects determined in advance and the molten glass The liquid level level of the processing apparatus is determined, and the reference liquid level is determined as the liquid level of the molten glass processing apparatus corresponding to the allowable value of the platinum defect number.

(形態22) (Form 22)

一種熔融玻璃處理裝置,其特徵在於:其係包含由熔融玻璃之液面與內壁所形成之氣相空間及熔融玻 璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包含調整部,其將上述熔融玻璃處理裝置之液面水平調整為預先決定之基準液面水平;且上述調整部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平。 A molten glass processing apparatus characterized by comprising a gas phase space formed by a liquid surface and an inner wall of molten glass, and a molten glass a liquid phase of the glass, wherein at least a part of the inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and an adjustment portion for adjusting a liquid level of the molten glass processing apparatus to a predetermined reference liquid The adjustment level is determined based on the correlation between the number of platinum defects obtained in advance and the liquid level of the molten glass processing apparatus, and the reference liquid level is determined as the melting corresponding to the allowable value of the number of platinum defects. The level of the liquid level of the glass processing unit.

(形態23) (Form 23)

一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且包含由熔融玻璃之液面與內壁所形成之氣相空間及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及控制部,其控制與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and includes a liquid surface and an inner wall formed of molten glass a gas phase space and a liquid phase of the molten glass, and at least a part of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus for forming the molten glass treated by the molten glass processing apparatus into a flat plate a glass; and a control unit that controls a ratio of an area of the platinum group metal of the inner wall in contact with the gas phase space to a volume of the gas phase space to reduce volatilization of the platinum group metal of the molten glass processing apparatus.

(形態24) (Form 24)

一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且包含由熔融玻璃之液面與內壁所形成之氣相空間及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及 調整部,其調整與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積與上述氣相空間之體積之比,以減少上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and includes a liquid surface and an inner wall formed of molten glass a gas phase space and a liquid phase of the molten glass, and at least a part of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus for forming the molten glass treated by the molten glass processing apparatus into a flat plate Glass; and The adjusting portion adjusts a ratio of an area of the platinum group metal of the inner wall in contact with the gas phase space to a volume of the gas phase space to reduce volatilization of the platinum group metal in the molten glass processing apparatus.

(形態25) (Form 25)

一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且包含由熔融玻璃之液面與內壁所形成之氣相空間及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及控制部,其將上述熔融玻璃處理裝置之液面水平控制為預先決定之基準液面水平;且上述控制部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and includes a liquid surface and an inner wall formed of molten glass a gas phase space and a liquid phase of the molten glass, and at least a part of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus for forming the molten glass treated by the molten glass processing apparatus into a flat plate a glass; and a control unit that controls a liquid level of the molten glass processing apparatus to a predetermined reference liquid level; and the control unit is based on a predetermined number of platinum defects and a liquid level of the molten glass processing apparatus In the correlation, the reference liquid level is determined as the liquid level of the molten glass processing apparatus corresponding to the allowable value of the platinum defect number.

(形態26) (Form 26)

一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且包含由熔融玻璃之液面與內壁所形成之氣相空間及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及調整部,其將上述熔融玻璃處理裝置之液面水平調整為預先決定之基準液面水平;且 上述調整部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and includes a liquid surface and an inner wall formed of molten glass a gas phase space and a liquid phase of the molten glass, and at least a part of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus for forming the molten glass treated by the molten glass processing apparatus into a flat plate a glass; and an adjustment unit that adjusts a liquid level of the molten glass processing apparatus to a predetermined reference liquid level; The adjustment unit determines the reference liquid level to be the molten glass processing apparatus corresponding to the allowable value of the number of platinum defects based on the correlation between the number of platinum defects obtained in advance and the liquid level of the molten glass processing apparatus. Level level.

根據上述態樣之玻璃基板之製造方法、玻璃基板製造裝置、及熔融玻璃處理裝置,可抑制鉑族金屬之揮發,且可抑制於氣相空間內揮發掉之鉑金屬之凝聚物之一部分成為雜質而混入熔融玻璃。 According to the method for producing a glass substrate, the glass substrate manufacturing apparatus, and the molten glass processing apparatus according to the above aspect, the volatilization of the platinum group metal can be suppressed, and a part of the aggregate of the platinum metal volatilized in the gas phase space can be suppressed from becoming an impurity. It is mixed into the molten glass.

100‧‧‧熔融玻璃產生裝置 100‧‧‧Solid glass generator

101‧‧‧熔解裝置 101‧‧‧melting device

101d‧‧‧螺旋進料器 101d‧‧‧Spiral feeder

102‧‧‧澄清裝置 102‧‧‧Clarification device

102a‧‧‧澄清管 102a‧‧‧Clarification tube

102b‧‧‧通氣管 102b‧‧‧ snorkel

103‧‧‧攪拌裝置 103‧‧‧Agitator

103a‧‧‧攪拌器 103a‧‧‧Agitator

104、105、106‧‧‧玻璃供給管 104, 105, 106‧‧‧ glass supply tube

107‧‧‧通氣管 107‧‧‧ snorkel

200‧‧‧成形裝置 200‧‧‧Forming device

210‧‧‧成形體 210‧‧‧Formed body

300‧‧‧切斷裝置 300‧‧‧cutting device

MG‧‧‧熔融玻璃 MG‧‧‧ molten glass

SG‧‧‧平板玻璃 SG‧‧ ‧ flat glass

W1、W2‧‧‧氣流 W1, W2‧‧‧ airflow

圖1係表示本實施形態之玻璃基板之製造方法之步驟之一例的圖。 Fig. 1 is a view showing an example of a procedure of a method for producing a glass substrate of the embodiment.

圖2係模式性地表示本實施形態之進行熔解步驟~切斷步驟之裝置之一例的圖。 Fig. 2 is a view schematically showing an example of a device for performing a melting step to a cutting step in the embodiment.

圖3(a)、(b)係說明本實施形態之澄清裝置之液面與澄清裝置之氣相空間內之氣流之流向的圖。 Fig. 3 (a) and (b) are views showing the flow of the liquid flow in the gas phase space of the clarification device of the present embodiment and the clarification device.

圖4(a)、(b)係說明澄清裝置內之熔融玻璃之液面之水平之變動的圖。 4(a) and 4(b) are diagrams showing changes in the level of the liquid surface of the molten glass in the clarification device.

圖5係說明本實施形態中所使用之線及目標液面水平的圖。 Fig. 5 is a view for explaining the level of the line and the target liquid level used in the embodiment.

圖6係表示本實施形態中使用之比S/L與缺點密度之關係的圖。 Fig. 6 is a view showing the relationship between the ratio S/L and the defect density used in the present embodiment.

以下,對本實施形態之玻璃基板之製造方法、玻璃基板製造裝置、及熔融玻璃處理裝置進行說明。圖1係表示本實施形態之玻璃基板之製造方法之步驟之一例的圖。 Hereinafter, a method for producing a glass substrate, a glass substrate manufacturing apparatus, and a molten glass processing apparatus according to the present embodiment will be described. Fig. 1 is a view showing an example of a procedure of a method for producing a glass substrate of the embodiment.

以下說明之鉑或鉑合金等係鉑族金屬,且包括鉑、釕、銠、鈀、鋨、銥、及該等金屬之合金。 The platinum or platinum alloy described below is a platinum group metal, and includes platinum, rhodium, ruthenium, palladium, iridium, osmium, and alloys of the metals.

又,凝聚後之鉑或鉑合金之雜質(鉑缺陷)為呈單向之細長之線狀物。所謂鉑缺陷之最大長度,係指與對鉑族金屬之雜質(凝聚物)進行 拍攝時之雜質之像外接之外接長方形的成為最長邊之長邊之長度。所謂鉑缺陷之最小長度,係指與對鉑族金屬之雜質(凝聚物)進行拍攝時之雜質之像外接之外接長方形的成為最短邊之短邊之長度。所謂鉑缺陷,係指作為最大長度相對於最小長度之比之縱橫比超過100之鉑族金屬之雜質。例如,鉑族金屬之雜質(凝聚物)之最大長度為50μm~300μm,最小長度為0.5μm~2μm。 Further, the impurity (platinum defect) of the platinum or platinum alloy after the aggregation is a unidirectional elongated linear material. The maximum length of the platinum defect refers to the impurity (agglomerate) of the platinum group metal. The image of the impurity at the time of shooting is externally connected to the length of the long side of the longest side of the rectangle. The minimum length of the platinum defect refers to the length of the short side of the shortest side which is connected to the image of the impurity when the impurity (aggregate) of the platinum group metal is imaged. The term "platinum defect" refers to an impurity of a platinum group metal having an aspect ratio of more than 100 as a ratio of the maximum length to the minimum length. For example, the platinum group metal impurity (agglomerate) has a maximum length of 50 μm to 300 μm and a minimum length of 0.5 μm to 2 μm.

本說明書中之控制包含調整。調整至少包含藉由操作員之輸入操作並經由裝置而變更對象物之溫度、流量、濃度、壓力等之調整、以及操作員之手動調整。 The controls in this manual contain adjustments. The adjustment includes at least an adjustment of the temperature, flow rate, concentration, pressure, and the like of the object by the input operation of the operator and manual adjustment by the operator.

玻璃基板之製造方法主要包含熔解步驟(ST1)、澄清步驟(ST2)、均質化步驟(ST3)、成形步驟(ST4)、徐冷步驟(ST5)、及切斷步驟(ST6)。 The manufacturing method of the glass substrate mainly includes a melting step (ST1), a clarification step (ST2), a homogenization step (ST3), a molding step (ST4), a cold cooling step (ST5), and a cutting step (ST6).

熔解步驟(ST1)係於熔解槽中進行。熔解步驟係藉由將玻璃原料投入至儲存於熔解槽之熔融玻璃之液面而製作熔融玻璃。再者,較佳為於玻璃原料中添加澄清劑。關於澄清劑,就降低環境負荷之方面而言,可較佳地使用氧化錫。 The melting step (ST1) is carried out in a melting tank. The melting step is to produce a molten glass by putting a glass raw material into a liquid surface of a molten glass stored in a melting tank. Further, it is preferred to add a clarifying agent to the glass raw material. Regarding the clarifying agent, tin oxide can be preferably used in terms of reducing the environmental load.

澄清步驟(ST2)係於澄清裝置之由鉑或鉑合金等構成之澄清管之內部進行。澄清步驟中,使澄清裝置之管內之熔融玻璃升溫。於此過程中,澄清劑成為藉由還原反應而釋出氧,之後作為還原劑而產生作用之物質。熔融玻璃中所含之含有O2、CO2或SO2之泡與藉由澄清劑之還原反應而產生之O2合為一體,體積變大,浮出至熔融玻璃之液面並破泡,從而消失。泡中所含之氣體通過設置於澄清裝置之氣相空間而被釋出至外部大氣。 The clarification step (ST2) is carried out inside the clarification tube composed of platinum or a platinum alloy or the like in the clarification device. In the clarification step, the molten glass in the tube of the clarification device is heated. In this process, the clarifying agent becomes a substance which releases oxygen by a reduction reaction and then acts as a reducing agent. The bubble containing O 2 , CO 2 or SO 2 contained in the molten glass is integrated with O 2 generated by the reduction reaction of the clarifying agent, and the volume becomes large, and floats to the surface of the molten glass and breaks. So disappear. The gas contained in the bubble is released to the outside atmosphere through a gas phase space provided in the clarification device.

其後,於澄清步驟中,使熔融玻璃之溫度降低。於此過程中,使藉由澄清劑之還原反應而獲得之還原劑行氧化反應。藉此,使殘存於熔融玻璃之泡中之O2等氣體成分溶入熔融玻璃中,從而使泡消失。 Thereafter, in the clarification step, the temperature of the molten glass is lowered. In this process, the reducing agent obtained by the reduction reaction of the fining agent is subjected to an oxidation reaction. Thereby, a gas component such as O 2 remaining in the bubble of the molten glass is dissolved in the molten glass to cause the bubble to disappear.

均質化步驟(ST3)係使用攪拌器對經由自澄清裝置延伸之配管而供給之攪拌裝置內之熔融玻璃進行攪拌,藉此進行熔融玻璃之均質化。均質化步驟(ST3)亦可於澄清步驟之前進行。 In the homogenization step (ST3), the molten glass in the stirring device supplied through the pipe extending from the clarification device is stirred by a stirrer to homogenize the molten glass. The homogenization step (ST3) can also be carried out before the clarification step.

於成形裝置中進行成形步驟(ST4)及徐冷步驟(ST5)。 The forming step (ST4) and the quenching step (ST5) are performed in the forming apparatus.

成形步驟(ST4)係將熔融玻璃成形為平板玻璃,並形成平板玻璃之流體。成形可使用溢流下拉法或浮式法。下述之本實施形態係列舉使用溢流下拉法之例進行說明。 The forming step (ST4) forms the molten glass into a flat glass and forms a fluid of the flat glass. For forming, an overflow down-draw method or a floating method can be used. The following series of embodiments will be described using an example of an overflow down-draw method.

徐冷步驟(ST5)係使成形且流動之平板玻璃變為所需之厚度,並以不產生內部應變之方式,進而不產生翹曲之方式進行冷卻。 The cold step (ST5) is such that the formed and flowing flat glass becomes a desired thickness, and is cooled in such a manner that no internal strain is generated and warpage is not generated.

切斷步驟(ST6)係藉由於切斷裝置中,將自成形裝置供給之平板玻璃切斷為特定之長度,而獲得板狀之玻璃板。所切斷之玻璃板進而被切斷為特定之尺寸,而製作目標尺寸之玻璃基板。 In the cutting step (ST6), the plate glass supplied from the molding device is cut into a specific length by the cutting device to obtain a plate-shaped glass plate. The cut glass sheet is further cut into a specific size to produce a glass substrate of a target size.

本實施形態之玻璃基板之製造方法係於用於澄清步驟~均質化步驟之裝置中實施以下之方法。 The method for producing a glass substrate of the present embodiment is carried out by the following method in an apparatus for a clarification step to a homogenization step.

即,於將玻璃之原料熔解而產生熔融玻璃之熔解步驟後,且於將熔融玻璃成形為平板玻璃前,使其通過用於處理熔融玻璃之熔融玻璃處理裝置。該處理裝置包含金屬製之管或槽,該金屬製之管或槽具有包含鉑或鉑合金等之內壁。該管或槽包含熔融玻璃之液相、及由熔融玻璃之液面與內壁所形成之氣相空間,且包圍氣相空間之內壁由含有鉑族金屬之材料構成。該熔融玻璃處理裝置係控制(調整)與氣相空間接觸之熔融玻璃處理裝置之內壁之鉑族金屬之面積與氣相空間之體積之比、或控制(調整)熔融玻璃處理裝置內之熔融玻璃之液面水平,以減少熔融玻璃處理裝置內之與氣相空間接觸之鉑族金屬之揮發。藉由適當地控制(調整)上述比或上述液面水平,而可抑制自熔融玻璃處理裝置之內壁揮發鉑族金屬。對此方面下文進行闡述。此種熔融玻璃之處理裝置適用於在熔解步驟與成形步驟間之步驟中使用之裝置。且 適用於在澄清步驟與均質化步驟間之步驟中使用之裝置。例如,適用於進行澄清步驟之澄清裝置及進行均質化步驟之攪拌裝置。以下,以適用於澄清裝置之形態為代表進行說明。 That is, after melting the raw material of the glass to produce a melting step of the molten glass, the molten glass is passed through a molten glass processing apparatus for processing molten glass before being formed into a flat glass. The treatment device comprises a metal tube or tank having an inner wall comprising platinum or a platinum alloy or the like. The tube or tank comprises a liquid phase of molten glass and a gas phase space formed by the liquid surface and the inner wall of the molten glass, and the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal. The molten glass processing apparatus controls (adjusts) the ratio of the area of the platinum group metal of the inner wall of the molten glass processing apparatus in contact with the gas phase space to the volume of the gas phase space, or controls (adjusts) the melting in the molten glass processing apparatus. The level of the liquid level of the glass is used to reduce the volatilization of the platinum group metal in the molten glass processing apparatus in contact with the gas phase space. By appropriately controlling (adjusting) the above ratio or the above liquid level, it is possible to suppress the volatilization of the platinum group metal from the inner wall of the molten glass processing apparatus. This aspect is explained below. Such a molten glass processing apparatus is suitable for use in a device used in the steps between the melting step and the forming step. And A device suitable for use in the steps between the clarification step and the homogenization step. For example, it is suitable for a clarification device for performing a clarification step and a stirring device for performing a homogenization step. Hereinafter, a description will be given of a form suitable for the clarification device.

圖2係模式性地表示本實施形態之進行熔解步驟(ST1)~切斷步驟(ST6)之玻璃基板製造裝置之一例的圖。如圖2所示,該裝置主要包括熔融玻璃產生裝置100、成形裝置200、及切斷裝置300。熔融玻璃產生裝置100包括熔解裝置101、澄清裝置102、攪拌裝置103、及玻璃供給管104、105、106。 Fig. 2 is a view schematically showing an example of a glass substrate manufacturing apparatus for performing a melting step (ST1) to a cutting step (ST6) in the embodiment. As shown in FIG. 2, the apparatus mainly includes a molten glass generating apparatus 100, a forming apparatus 200, and a cutting apparatus 300. The molten glass generating apparatus 100 includes a melting apparatus 101, a clarification apparatus 102, a stirring apparatus 103, and glass supply pipes 104, 105, and 106.

圖2所示之例之熔解裝置101將玻璃原料熔解而製作熔融玻璃。澄清裝置102含有包含鉑或鉑合金等之澄清管102a(參照圖3)。於澄清管102a中,在以熔融玻璃MG具有液面之方式形成有氣相空間之狀態下使熔融玻璃MG通過之期間,於設置於澄清裝置102之電極板間通入電流,對澄清管102a進行通電加熱,而對熔融玻璃MG至少進行使泡釋出至氣相空間之脫泡處理。本實施形態中,為了使熔融玻璃脫泡,而使用對澄清管102a進行通電加熱之方式,但澄清管102a之加熱並不限定於通電加熱。例如,亦可使用於管之周圍設置加熱器等熱源,藉由熱傳導或熱輻射而間接地加熱澄清管102a之方式。 The melting apparatus 101 of the example shown in Fig. 2 melts the glass raw material to produce molten glass. The clarification device 102 contains a clarification tube 102a (see FIG. 3) containing platinum or a platinum alloy. In the clarification pipe 102a, while the molten glass MG is passed while the molten glass MG has a liquid phase, the electric current is supplied between the electrode plates provided in the clarification device 102, and the clarification pipe 102a is passed. The electric heating is performed, and at least the defoaming process for releasing the bubbles into the gas phase space is performed on the molten glass MG. In the present embodiment, in order to defoam the molten glass, the clarification pipe 102a is electrically heated, but the heating of the clarification pipe 102a is not limited to the electric heating. For example, a heat source such as a heater may be provided around the tube, and the clarification tube 102a may be indirectly heated by heat conduction or heat radiation.

攪拌裝置103係藉由攪拌器103a攪拌熔融玻璃MG而使其均質化。 The stirring device 103 is homogenized by stirring the molten glass MG by the agitator 103a.

成形裝置200包含成形體210,藉由使用成形體210之溢流下拉法而使由澄清裝置102、攪拌裝置103處理過之熔融玻璃MG成形,並製成平板玻璃SG。進而,於成形裝置200中,以於平板玻璃SG不會產生板厚偏差、應變、及翹曲之方式將平板玻璃SG徐冷。 The molding apparatus 200 includes a molded body 210, and the molten glass MG processed by the clarification device 102 and the stirring device 103 is formed by using an overflow down-draw method of the molded body 210, and is formed into a sheet glass SG. Further, in the molding apparatus 200, the sheet glass SG is cooled by the sheet glass SG so as not to cause variations in sheet thickness, strain, and warpage.

切斷裝置300將徐冷後之平板玻璃SG切斷而製成玻璃基板。 The cutting device 300 cuts the cold-formed sheet glass SG to form a glass substrate.

(澄清步驟及澄清裝置) (clarification step and clarification device)

圖3(a)、(b)係說明本實施形態之澄清裝置102之液面與澄清裝置102內之氣相空間內之氣流之流向的圖。圖3(a)表示產生於氣相空間 內之氣流W1較快之情形,圖3(b)表示產生於氣相空間內之氣流W2之速度較慢之情形。 3(a) and 3(b) are views showing the flow of the liquid in the gas phase space in the gas phase space of the clarification device 102 and the clarification device 102 of the present embodiment. Figure 3 (a) shows the generation in the gas phase space In the case where the inner airflow W1 is faster, FIG. 3(b) shows a case where the velocity of the airflow W2 generated in the gas phase space is slow.

澄清步驟包含脫泡處理與吸收處理。以下之說明係以使用氧化錫作為澄清劑為例進行說明。氧化錫與先前以來通常所使用之亞砷酸相比澄清功能較低,但於環境負荷較低之方面而言,可較佳地用作澄清劑。然而,由於氧化錫之澄清功能低於亞砷酸,故而於使用氧化錫之情形時,必須將熔融玻璃MG之澄清步驟時之熔融玻璃MG之溫度設為高於先前。於此情形時,例如澄清步驟中之熔融玻璃之溫度之最高溫度例如為1630℃~1720℃,較佳為1670℃~1710℃。 The clarification step includes a defoaming treatment and an absorption treatment. The following description will be made by taking tin oxide as a clarifying agent as an example. Tin oxide has a lower clarifying function than arsenious acid which has been conventionally used, but is preferably used as a clarifying agent in terms of a lower environmental load. However, since the clarifying function of tin oxide is lower than that of arsenious acid, in the case of using tin oxide, it is necessary to set the temperature of the molten glass MG at the time of the clarification step of the molten glass MG to be higher than the previous one. In this case, for example, the maximum temperature of the temperature of the molten glass in the clarification step is, for example, 1630 ° C to 1720 ° C, preferably 1670 ° C to 1710 ° C.

於熔解裝置101中熔解之熔融玻璃MG藉由玻璃供給管104(參照圖2)被導入至澄清裝置102。 The molten glass MG melted in the melting device 101 is introduced into the clarification device 102 by the glass supply pipe 104 (see FIG. 2).

如圖3(a)、(b)所示,澄清裝置102含有包含鉑或鉑合金等之長條狀之澄清管102a,且包括設置於澄清管102a之頂部之通氣管102b。 As shown in FIGS. 3(a) and 3(b), the clarification device 102 includes a long clarification tube 102a containing platinum or a platinum alloy, and includes a vent pipe 102b provided at the top of the clarification pipe 102a.

澄清管102a係以澄清管102a之一端之壁面連接於自熔解槽101延伸之玻璃供給管104,並以澄清管102a之另一端之壁面連接於玻璃供給管105。因此,自澄清管102a之一壁面呈大致水平方向流入之熔融玻璃MG於朝向另一壁面流動時進行澄清,並自另一壁面呈大致水平方向流出。因此,澄清管102a由於相對於熔解裝置101之熔融玻璃之液面水平而位於較高之液面水平,故而與使用相對於澄清管於垂直方向上延伸而連接於澄清管之垂直玻璃供給管及垂直玻璃排出管之減壓脫泡裝置不同。 The clarification pipe 102a is connected to the glass supply pipe 104 extending from the melting tank 101 by the wall surface of one end of the clarification pipe 102a, and is connected to the glass supply pipe 105 by the wall surface of the other end of the clarification pipe 102a. Therefore, the molten glass MG which flows in the substantially horizontal direction from the wall surface of the clarification pipe 102a is clarified when it flows toward the other wall surface, and flows out from the other wall surface in the substantially horizontal direction. Therefore, the clarification pipe 102a is located at a higher liquid level level with respect to the liquid level of the molten glass of the melting device 101, and thus is connected to the vertical glass supply pipe which is connected to the clarification pipe in the vertical direction with respect to the clarification pipe and The vacuum degassing device of the vertical glass discharge pipe is different.

澄清管102a內之氣相空間之壓力由於因脫泡而造成之氣體之釋出等,而與大氣壓同等或稍高於大氣壓。如下所述,亦有自通氣管107連接於排氣泵,而將氣壓設為低於大氣壓之情況,但即便於此情形時,大氣壓與氣相空間內之氣壓差亦大於0Pa且未達10Pa。 The pressure in the gas phase space in the clarification pipe 102a is equal to or slightly higher than the atmospheric pressure due to the release of gas due to defoaming or the like. As described below, the self-venting pipe 107 is connected to the exhaust pump, and the air pressure is set to be lower than atmospheric pressure, but even in this case, the atmospheric pressure difference between the atmospheric pressure and the gas phase space is greater than 0 Pa and less than 10 Pa. .

具體而言,澄清裝置102之澄清管102a包含熔融玻璃MG之液相、 及由該熔融玻璃MG之液面與澄清裝置102a之內壁所形成之氣相空間。包圍氣相空間之澄清裝置102之內壁由鉑或鉑合金等材料構成。澄清管102a之氣相空間由於存在自熔融玻璃MG釋出之氣體或自澄清管102a之內壁揮發之鉑或鉑合金等之氣體,故而即便經由通氣管107與大氣連通,氣相空間內之壓力亦變得高於大氣壓。因此,形成自氣相空間經由通氣管107向大氣流動之氣流W1、W2。 Specifically, the clarification tube 102a of the clarification device 102 contains a liquid phase of molten glass MG, And a gas phase space formed by the liquid surface of the molten glass MG and the inner wall of the clarification device 102a. The inner wall of the clarification device 102 surrounding the gas phase space is made of a material such as platinum or a platinum alloy. In the gas phase space of the clarification pipe 102a, there is a gas released from the molten glass MG or a gas such as platinum or a platinum alloy volatilized from the inner wall of the clarification pipe 102a, so that even if it communicates with the atmosphere via the vent pipe 107, it is in the gas phase space. The pressure also becomes higher than atmospheric pressure. Therefore, the air flows W1, W2 flowing from the gas phase space to the atmosphere via the vent pipe 107 are formed.

此種澄清管102a係控制或調整與氣相空間接觸之澄清管102a之內壁之鉑族金屬之面積L[m2]與氣相空間之體積S[m3]之比,以減少氣相空間內之鉑或鉑合金等之揮發。或者,控制或調整熔融玻璃之液面水平,以減少氣相空間內之鉑或鉑合金等之揮發。 The clarification pipe 102a controls or adjusts the ratio of the area L [m 2 ] of the platinum group metal of the inner wall of the clarification pipe 102a in contact with the gas phase space to the volume S [m 3 ] of the gas phase space to reduce the gas phase. Volatilization of platinum or platinum alloy in space. Alternatively, the level of the molten metal is controlled or adjusted to reduce the volatilization of platinum or platinum alloys in the gas phase space.

如上所述,於氣相空間內氣流W1、W2朝向通氣管107流動。如圖3(a)所示,於流速較快之氣流W1之情形時,氣相空間內所含之鉑或鉑合金等揮發物亦被迅速排出。因此,氣相空間內之鉑或鉑合金等之揮發物之濃度較低,故而鉑或鉑合金等之分壓低於飽和蒸氣壓,自澄清管102a之與氣相空間接觸之內壁之部分繼續揮發鉑或鉑合金等。反之,如圖3(b)所示,於流速較慢之氣流W2之情形時,氣相空間內所含之鉑或鉑合金等之揮發物之排出緩慢。因此,氣相空間內之鉑或鉑合金等之揮發物之蒸氣壓容易達到飽和蒸氣壓,從而抑制自澄清管102a之與氣相空間接觸之內壁之部分揮發鉑或鉑合金等。 As described above, the air flows W1, W2 flow toward the vent pipe 107 in the gas phase space. As shown in Fig. 3(a), in the case of the gas flow W1 having a relatively high flow rate, volatile substances such as platinum or platinum alloy contained in the gas phase space are also rapidly discharged. Therefore, the concentration of the volatile matter of platinum or platinum alloy or the like in the gas phase space is low, so that the partial pressure of platinum or platinum alloy or the like is lower than the saturated vapor pressure, and the portion of the inner wall contacting the gas phase space from the clarification pipe 102a continues. Volatile platinum or platinum alloy. On the other hand, as shown in Fig. 3(b), in the case of the gas flow W2 having a relatively slow flow rate, the discharge of volatile matter such as platinum or platinum alloy contained in the gas phase space is slow. Therefore, the vapor pressure of the volatile matter such as platinum or platinum alloy in the gas phase space easily reaches the saturated vapor pressure, thereby suppressing the partial evaporation of platinum or platinum alloy from the inner wall of the clarification pipe 102a which is in contact with the gas phase space.

因此,為了抑制向氣相空間揮發鉑或鉑合金等,只要降低氣流之流速即可。為了降低氣流之流速,只要增大氣相空間之體積,並縮小氣相空間與大氣間之氣壓差即可。又,若使澄清管102a內之氣相空間之體積增大,則降低熔融玻璃MG之液面之水平,減少熔融玻璃MG於單位時間內流入澄清管102a之量,故而藉由脫泡而自熔融玻璃MG釋出之氣體之量變少。其結果,氣相空間與大氣之壓力差變小,氣流之流速變低。 Therefore, in order to suppress the evaporation of platinum or a platinum alloy or the like into the gas phase space, it is only necessary to reduce the flow rate of the gas stream. In order to reduce the flow rate of the gas flow, it is only necessary to increase the volume of the gas phase space and reduce the difference in gas pressure between the gas phase space and the atmosphere. Further, when the volume of the gas phase space in the clarification pipe 102a is increased, the level of the liquid surface of the molten glass MG is lowered, and the amount of the molten glass MG flowing into the clarification pipe 102a per unit time is reduced, so that it is defoamed. The amount of gas released by the molten glass MG becomes small. As a result, the pressure difference between the gas phase space and the atmosphere becomes small, and the flow velocity of the gas flow becomes low.

另一方面,為了使與氣相空間接觸之內壁之鉑或鉑合金等之揮發之絕對量降低,只要縮小與氣相空間接觸之由鉑或鉑合金等構成之內壁之面積即可。 On the other hand, in order to reduce the absolute amount of volatilization of platinum or platinum alloy or the like on the inner wall in contact with the gas phase space, it is only necessary to reduce the area of the inner wall made of platinum, platinum alloy or the like in contact with the gas phase space.

因此,為了抑制鉑或鉑合金等之揮發,較理想為增大上述氣相空間之體積,並縮小與氣相空間接觸之由鉑或鉑合金等構成之內壁之面積。 Therefore, in order to suppress volatilization of platinum or a platinum alloy or the like, it is preferable to increase the volume of the gas phase space and to reduce the area of the inner wall made of platinum, platinum alloy or the like in contact with the gas phase space.

又,為了抑制鉑或鉑合金等之揮發,較理想為以成為如抑制鉑或鉑合金等之揮發之液面水平之方式控制或調整熔融玻璃MG之液面水平。 Further, in order to suppress volatilization of platinum or a platinum alloy or the like, it is preferable to control or adjust the liquid level of the molten glass MG so as to suppress the liquid level of volatilization of platinum or a platinum alloy.

以下,對氣相空間之體積及內壁之面積之調整、及液面水平之調整進行說明。 Hereinafter, the adjustment of the volume of the gas phase space and the area of the inner wall, and the adjustment of the liquid level will be described.

(氣相空間之體積及內壁之面積之控制、調整) (Control and adjustment of the volume of the gas phase space and the area of the inner wall)

就以上之觀點而言,本實施形態係控制或調整與氣相空間接觸之澄清管102a之內壁之鉑族金屬之面積L[m2]與氣相空間之體積S[m3]之比S/L,以減少氣相空間內之鉑或鉑合金等之揮發。藉此,可抑制自由鉑族金屬構成之內壁揮發鉑族金屬,並抑制於氣相空間內揮發掉之鉑金屬之凝聚物之一部分成為雜質(鉑缺陷)而混入熔融玻璃MG。以下,以控制為中心進行說明,但調整亦與控制同樣地適用。 From the above point of view, the present embodiment controls or adjusts the ratio of the area L [m 2 ] of the platinum group metal to the inner surface of the clarification tube 102a in contact with the gas phase space and the volume S [m 3 ] of the gas phase space. S/L to reduce the volatilization of platinum or platinum alloys in the gas phase space. Thereby, it is possible to suppress the volatilization of the platinum group metal on the inner wall of the free platinum group metal, and to suppress the part of the aggregate of the platinum metal volatilized in the gas phase space as an impurity (platinum defect) and to be mixed into the molten glass MG. Hereinafter, the description will be centered on the control, but the adjustment is also applied in the same manner as the control.

關於比S/L之控制(調整),較佳為於連續生產玻璃基板之情形時控制(調整)澄清管102a之熔融玻璃MG之液面之水平。例如,由於成形裝置200係將自熔融玻璃MG成形之平板玻璃一面利用未圖示之搬送輥進行拉伸一面徐冷,故而可藉由控制澄清管102a內之熔融玻璃MG之量而控制(調整)澄清管102a內之熔融玻璃MG之液面之水平。作為控制澄清管102a內之熔融玻璃MG之量之方法,例如包含如下方法:調整於熔解裝置101中製作熔融玻璃MG之玻璃原料之投入量,而調整熔融玻璃向澄清管102a內之導入量;或於使熔融玻璃MG自熔解裝置 101移動至澄清管102a時,使用溫度調整裝置調整熔融玻璃MG之溫度而改變黏度,藉此改變熔融玻璃MG之移動速度,而調整熔融玻璃向澄清管102a內之導入量;或於熔解裝置101與澄清管102a間設置縮小熔融玻璃MG之流量之流量控制部而調整熔融玻璃向澄清管102a內之導入量;及藉由調整成形裝置200之處理量而調整自澄清管102a流出之熔融玻璃之量等。如此,變更玻璃原料之投入量之螺旋進料器(screw feeder)101d、或溫度調整裝置、或流量控制部、以及調整成形裝置200之處理量之處理量調整指示裝置等可成為控制(調整)比S/L之控制部(調整部)。 Regarding the control (adjustment) of the S/L ratio, it is preferable to control (adjust) the level of the liquid surface of the molten glass MG of the clarification pipe 102a in the case of continuously producing a glass substrate. For example, in the molding apparatus 200, the flat glass formed from the molten glass MG is stretched while being stretched by a conveying roller (not shown), so that it can be controlled (adjusted by controlling the amount of the molten glass MG in the clarification pipe 102a). The level of the liquid level of the molten glass MG in the tube 102a is clarified. The method of controlling the amount of the molten glass MG in the clarification pipe 102a includes, for example, a method of adjusting the amount of the glass raw material to be produced in the molten glass MG in the melting device 101, and adjusting the amount of introduction of the molten glass into the clarification pipe 102a; Or to make the molten glass MG self-melting device When moving to the clarification pipe 102a, the temperature adjustment means adjusts the temperature of the molten glass MG to change the viscosity, thereby changing the moving speed of the molten glass MG, and adjusting the amount of introduction of the molten glass into the clarification pipe 102a; or in the melting device 101 A flow rate control unit for reducing the flow rate of the molten glass MG is provided between the clarification pipe 102a, and the amount of introduction of the molten glass into the clarification pipe 102a is adjusted; and the amount of molten glass flowing out from the clarification pipe 102a is adjusted by adjusting the amount of processing of the molding device 200. Quantity and so on. In this way, the screw feeder 101d, the temperature adjustment device, the flow rate control unit, and the processing amount adjustment instruction device for adjusting the processing amount of the molding device 200 can be controlled (adjusted). Control unit (adjustment unit) than S/L.

於控制(調整)熔融玻璃MG於澄清管102a內之液面之水平之情形時,若使液面之水平增高,則體積S與面積L同時變小。因此,對比S/L設定較佳之範圍。 When the level of the liquid surface of the molten glass MG in the clarification pipe 102a is controlled (adjusted), if the level of the liquid surface is increased, the volume S and the area L become smaller at the same time. Therefore, the preferred range is set in comparison with S/L.

就減少氣相空間內之鉑或鉑合金等之揮發之方面而言,較佳為將比S/L設為17[m]以上,更佳為設為25[m]以上。然而,若將比S/L設得過大,則於澄清管102a內流動之熔融玻璃之量變少,故而就玻璃基板之生產效率之方面而言為不佳。又,若使澄清管102a內之液面水平較玻璃供給管105之最上部降低,則自玻璃供給管105朝向澄清管102a產生氣流,而使澄清管102a內之氣流之流速變高。因此,液位水平之下限較佳為高於玻璃供給管105之最上部。就以上之方面而言,比S/L較佳為17~65[m]。即,比S/L於澄清管102a之情形時較佳為設定為17~65[m]之範圍,更佳為25~65[m]。此種比S/L之數值之範圍於剖面為圓形或橢圓形之澄清管時可實現。 In terms of reducing the volatilization of platinum or a platinum alloy or the like in the gas phase space, the ratio S/L is preferably 17 [m] or more, and more preferably 25 [m] or more. However, if the ratio S/L is set too large, the amount of molten glass flowing in the clarification pipe 102a becomes small, so that the production efficiency of the glass substrate is not good. Further, when the level of the liquid level in the clarification pipe 102a is lowered from the uppermost portion of the glass supply pipe 105, an air flow is generated from the glass supply pipe 105 toward the clarification pipe 102a, and the flow velocity of the airflow in the clarification pipe 102a is increased. Therefore, the lower limit of the liquid level is preferably higher than the uppermost portion of the glass supply pipe 105. In terms of the above, the ratio S/L is preferably 17 to 65 [m]. That is, the ratio S/L in the case of the clarification pipe 102a is preferably set to a range of 17 to 65 [m], more preferably 25 to 65 [m]. This ratio of S/L values can be achieved when the profile is a circular or elliptical clarification tube.

又,氣流之流速之較佳範圍較佳為5m/min以下,更佳為1m/min以下,進而更佳為0.5m/min以下。 Further, the flow rate of the gas stream is preferably in the range of preferably 5 m/min or less, more preferably 1 m/min or less, still more preferably 0.5 m/min or less.

再者,澄清管102a內之熔融玻璃MG之液面之水平有藉由傳達熔解裝置101之玻璃原料投入時之衝擊,或傳達攪拌裝置103之攪拌器 103a之旋轉振動而變動之情形。圖4(a)、(b)係說明澄清管102a內之熔融玻璃之液面之水平之變動的圖。將於澄清管102a內,熔融玻璃MG佔有澄清管102a之內部之全部空間之50%以上設為前提。於如圖4(a)所示,熔融玻璃MG佔有剖面為圓管形狀之澄清管102a之內部之全部空間之70%左右並流動之情形時,因上述振動而導致之液面水平之變動大於如圖4(b)所示,熔融玻璃MG佔有澄清管102a之內部之全部空間之55%左右並流動之情形。於如圖4(a)所示之情形時,由於液面水平之較大之變動,變得容易使附著於內壁之鉑或鉑合金等之凝聚物之一部分脫離,而作為雜質混入熔融玻璃MG。於此方面而言,澄清管102a內之熔融玻璃MG於氣相空間之澄清管102a之內部之全部空間所占之比率越小越好。亦考慮此方面,將比S/L控制(調整)為適當之數值範圍。 Further, the level of the liquid surface of the molten glass MG in the clarification pipe 102a is caused by the impact when the glass raw material of the melting device 101 is input, or the agitator of the stirring device 103 is conveyed. The case where the rotation of 103a changes. 4(a) and 4(b) are diagrams showing changes in the level of the liquid level of the molten glass in the clarification pipe 102a. In the clarification pipe 102a, it is assumed that the molten glass MG occupies 50% or more of the entire space inside the clarification pipe 102a. As shown in Fig. 4(a), when the molten glass MG occupies about 70% of the entire space inside the clarification pipe 102a having a circular tube shape and flows, the fluctuation of the liquid level due to the above vibration is larger than As shown in FIG. 4(b), the molten glass MG occupies about 55% of the entire space inside the clarification pipe 102a and flows. In the case of the case of the liquid level as shown in Fig. 4 (a), it is easy to partially remove a part of the aggregate of platinum or a platinum alloy or the like adhering to the inner wall, and to be mixed as an impurity into the molten glass. MG. In this respect, the ratio of the total space of the inside of the clarification pipe 102a in the gas phase space of the molten glass MG in the clarification pipe 102a is as small as possible. Also considering this aspect, the S/L is controlled (adjusted) to an appropriate numerical range.

於以澄清管102a之熔融玻璃MG之液面水平控制(調整)比S/L之情形時,如下所述,預先求出鉑缺陷數與熔融玻璃處理裝置之熔融玻璃之液面水平之相關關係,而將與鉑缺陷數之容許值對應之熔融玻璃處理裝置之液面水平決定為基準液面水平,澄清步驟等處理步驟較佳為基於該基準液面水平控制(調整)液面水平。又,此時,處理步驟較佳為基於以包含基準液面水平之方式決定之目標液面水平範圍而控制(調整)液面水平。液面水平較佳為藉由控制或調整供給至熔融玻璃處理裝置之熔融玻璃之量及於成形步驟中成形之平板玻璃之成形量之至少一者而控制(調整)。 When the ratio of the liquid level of the molten glass MG of the clarification pipe 102a is controlled (adjusted) to S/L, the correlation between the number of platinum defects and the level of the molten glass of the molten glass processing apparatus is determined in advance as follows. The liquid level of the molten glass processing apparatus corresponding to the allowable value of the platinum defect number is determined as the reference liquid level, and the processing step such as the clarification step is preferably based on the reference level level control (adjustment) of the liquid level. Further, at this time, it is preferable that the processing step is to control (adjust) the liquid level based on the target liquid level level determined in such a manner as to include the reference liquid level. The liquid level is preferably controlled (adjusted) by controlling or adjusting at least one of the amount of molten glass supplied to the molten glass processing apparatus and the amount of forming of the flat glass formed in the forming step.

再者,於連續生產玻璃基板之情形時控制(調整)上述比S/L時,較佳為藉由切斷步驟(ST6)後所進行之玻璃基板之缺陷檢查,而檢測作為鉑或鉑金屬等之凝聚物之雜質(鉑缺陷),並根據該雜質之檢測個數之結果控制(調整)比S/L。缺陷檢查係識別複數種雜質等缺陷,鉑或鉑金屬等之凝聚物由於相對於其他雜質或缺陷形狀呈特異之形狀, 故而可容易識別。 Further, when the ratio S/L is controlled (adjusted) in the case of continuously producing a glass substrate, it is preferable to detect the defect as a platinum or platinum metal by the defect inspection of the glass substrate after the cutting step (ST6). The impurity of the agglomerate (platinum defect), and the ratio (S) is controlled (adjusted) according to the number of detections of the impurity. The defect inspection identifies defects such as a plurality of impurities, and the agglomerates of platinum or platinum metal have a specific shape due to shapes with respect to other impurities or defects. Therefore, it can be easily identified.

(液面水平之控制、調整) (Control and adjustment of liquid level)

就上述觀點而言,本實施形態中,亦可控制(調整)澄清管102a內之熔融玻璃之液面水平,以抑制鉑族金屬之揮發。以下,以控制為中心進行說明,但調整亦與控制同樣地適用。 From the above point of view, in the present embodiment, the liquid level of the molten glass in the clarification pipe 102a can be controlled (adjusted) to suppress the volatilization of the platinum group metal. Hereinafter, the description will be centered on the control, but the adjustment is also applied in the same manner as the control.

澄清管102a內之熔融玻璃MG之液面水平可藉由調整供給至澄清管102a或自澄清管102a排出之熔融玻璃MG量而控制(調整)。例如,由於成形裝置200通常由自熔融玻璃產生裝置100供給之每單位時間固定量之熔融玻璃MG成形為平板玻璃,故而可藉由調整導入至澄清管102a之熔融玻璃MG之量而控制(調整)澄清管102a內之熔融玻璃MG之液面水平。作為調整導入(供給)至澄清管102a之熔融玻璃MG之量之方法,例如包含如下方法等:調整於熔解裝置101中製作熔融玻璃MG之玻璃原料之投入量;或於使熔融玻璃MG自熔解裝置101移動至澄清管102a時,使用溫度調整裝置調整熔融玻璃MG之溫度而改變黏度,藉此改變熔融玻璃MG之移動速度;或於熔解裝置101與澄清管102a間設置縮小熔融玻璃MG之流量之流量控制部。如此,變更玻璃原料之投入量之原料投入裝置101d、或溫度調整裝置、或流量控制部可成為控制(調整)熔融玻璃MG之液面水平之控制部(調整部)。又,澄清管102a內之熔融玻璃之液面水平亦可藉由調整成形裝置200之平板玻璃之成形量(處理量)而控制(調整)。或者,可藉由調整自澄清管102a內供給至成形裝置200之熔融玻璃MG,而控制(調整)澄清管102a內之熔融玻璃之液面水平。作為調整成形裝置200之平板玻璃之成形量(處理量)之方法,例如包含搬送輥搬送平板玻璃之速度控制、平板玻璃之板厚控制等。另一方面,作為控制自澄清管102a內供給至成形裝置200之熔融玻璃MG量之方法,包含如下方法等:於使熔融玻璃MG自澄清管102a移動至成形裝置200時,使用溫度調整裝置調整熔融玻璃 MG之溫度而改變黏度,藉此改變熔融玻璃MG之移動速度;或於澄清管102a與成形裝置200間設置縮小熔融玻璃MG之流量之流量控制部。如此,搬送輥之速度調整裝置、溫度調整裝置、或流量控制部可成為調整熔融玻璃MG之液面水平之控制部(調整部)。 The level of the molten glass MG in the clarification pipe 102a can be controlled (adjusted) by adjusting the amount of the molten glass MG supplied to the clarification pipe 102a or discharged from the clarification pipe 102a. For example, since the molding apparatus 200 is usually formed into a flat glass by a fixed amount of molten glass MG supplied from the molten glass generating apparatus 100 per unit time, it can be controlled (adjusted by adjusting the amount of molten glass MG introduced into the clarification pipe 102a). The liquid level of the molten glass MG in the tube 102a is clarified. The method of adjusting the amount of the molten glass MG introduced (supplied) to the clarification pipe 102a includes, for example, a method of adjusting the amount of the glass raw material to be used for the molten glass MG in the melting device 101, or self-melting the molten glass MG. When the apparatus 101 moves to the clarification pipe 102a, the temperature adjustment means is used to adjust the temperature of the molten glass MG to change the viscosity, thereby changing the moving speed of the molten glass MG; or to reduce the flow rate of the molten glass MG between the melting device 101 and the clarification pipe 102a. Flow control unit. In this way, the raw material input device 101d or the temperature adjustment device or the flow rate control unit that changes the amount of input of the glass raw material can be a control unit (adjustment unit) that controls (adjusts) the liquid level of the molten glass MG. Further, the level of the molten metal of the molten glass in the clarification pipe 102a can also be controlled (adjusted) by adjusting the forming amount (processing amount) of the flat glass of the forming device 200. Alternatively, the level of the molten glass in the clarification pipe 102a can be controlled (adjusted) by adjusting the molten glass MG supplied from the clarification pipe 102a to the forming apparatus 200. The method of adjusting the molding amount (treatment amount) of the flat glass of the molding apparatus 200 includes, for example, speed control of the conveyance roller conveying flat glass, thickness control of the flat glass, and the like. On the other hand, the method of controlling the amount of molten glass MG supplied from the clarification pipe 102a to the molding apparatus 200 includes a method of adjusting the temperature of the molten glass MG from the clarification pipe 102a to the forming apparatus 200 by using a temperature adjusting device. Molten glass The viscosity of the MG is changed to change the viscosity of the molten glass MG, or a flow rate control unit for reducing the flow rate of the molten glass MG is provided between the clarification pipe 102a and the forming apparatus 200. In this way, the speed adjusting device, the temperature adjusting device, or the flow rate control unit of the conveying roller can be a control unit (adjusting unit) that adjusts the liquid level of the molten glass MG.

於上述控制部(調整部)中,較佳為進行玻璃原料之投入量之調整、及成形裝置200之平板玻璃之成形量之調整中之至少一者。 In the control unit (adjustment unit), at least one of adjusting the amount of input of the glass raw material and adjusting the amount of forming of the flat glass of the molding apparatus 200 is preferable.

再者,於本實施形態中,熔融玻璃MG之液面水平例如可使用設置於澄清裝置102之液位測定裝置測定。再者,澄清管102a長度方向之任意部分均顯示大致相同之值。因此,液面水平可針對澄清管102a之任意部分而控制(調整)。 Further, in the present embodiment, the liquid level of the molten glass MG can be measured, for example, by a liquid level measuring device provided in the clarification device 102. Further, any portion of the longitudinal direction of the clarification pipe 102a shows substantially the same value. Thus, the level of the liquid level can be controlled (adjusted) for any portion of the clarification tube 102a.

液面水平之控制(調整)較佳為使澄清管102a中成為預先決定之基準液面水平或目標液面水平而進行。基準液面水平為於澄清管102a內熔融玻璃MG之液面水平可採用之大小。又,目標液面水平為於澄清管102a內熔融玻璃MG之液面水平可採用之大小之範圍。基準液面水平及目標液面水平主要由如下觀點所決定:抑制於氣相空間內揮發掉之鉑或鉑合金等之凝聚物之一部分成為雜質而混入熔融玻璃,於玻璃基板成為缺陷(以下,亦稱為鉑缺陷)。又,目標液面水平亦由不會使玻璃基板之生產性降低之觀點所決定。 The control (adjustment) of the liquid level is preferably performed such that the clarification pipe 102a becomes a predetermined reference liquid level or a target liquid level. The reference level is the size at which the level of the molten glass MG in the clarification tube 102a can be used. Further, the target liquid level is a range in which the liquid level of the molten glass MG in the clarification pipe 102a can be used. The reference liquid level and the target liquid level are mainly determined by the fact that one part of the aggregate of platinum or a platinum alloy which is volatilized in the gas phase space is mixed as an impurity and is mixed into the molten glass, and becomes a defect in the glass substrate (hereinafter, Also known as platinum defects). Further, the target liquid level is also determined from the viewpoint that the productivity of the glass substrate is not lowered.

為了決定基準液面水平或目標液面水平A,而於玻璃基板之製造開始前,求出熔融玻璃MG之液面水平與鉑缺陷數之相關關係。基準液面水平為與鉑缺陷數之容許值對應之澄清管102a之液面水平,且係基於澄清管102a內之熔融玻璃MG之液面水平與鉑缺陷數之相關關係而決定。目標液面水平係以包含上述基準液面水平之方式決定。 In order to determine the reference liquid level or the target liquid level A, the correlation between the liquid level of the molten glass MG and the number of platinum defects is obtained before the start of the production of the glass substrate. The reference liquid level is determined by the liquid level of the clarification pipe 102a corresponding to the allowable value of the platinum defect number, and is determined based on the correlation between the liquid level of the molten glass MG in the clarification pipe 102a and the number of platinum defects. The target level is determined by including the above reference level.

參照圖5,對線S及目標液面水平進行說明。如圖5所示,線S表示熔融玻璃MG之液面水平與鉑缺陷數之相關關係。再者,液面水平由熔融玻璃MG之液面、與正交於液面之方向上之氣相空間之上端(內 壁之頂壁部分)之距離(mm)表示。 The line S and the target liquid level will be described with reference to Fig. 5 . As shown in Fig. 5, the line S indicates the correlation between the level of the molten glass MG and the number of platinum defects. Furthermore, the liquid level is from the liquid surface of the molten glass MG and the upper end of the gas phase space in the direction orthogonal to the liquid surface (inside) The distance (mm) of the top wall portion of the wall is indicated.

熔融玻璃MG之液面水平與鉑缺陷數之相關關係係基於先前所使用之玻璃基板製造時之製造條件、測定項目等中的於澄清步驟中之液面之高度(液面水平),及對使用該製造條件等製造之玻璃基板進行之檢查結果中之鉑缺陷數而被求出。於上述相關關係之作成時,將除該等2個參數,即液面水平及鉑缺陷數以外之其他條件設為固定。該其他條件例如包含:澄清裝置102之大小、澄清管102a內之熔融玻璃MG之溫度、澄清管102a之溫度、澄清管102a之構成材料之種類、玻璃之種類、下述惰性氣體之導入之有無、惰性氣體之導入量、熔融玻璃MG之澄清劑之含量等。 The correlation between the liquid level of the molten glass MG and the number of platinum defects is based on the height of the liquid surface (liquid level) in the clarification step in the manufacturing conditions, measurement items, and the like at the time of manufacture of the glass substrate used previously, and The number of platinum defects in the inspection results by the glass substrate produced by the production conditions or the like was determined. In the case of the above-mentioned correlation, the conditions other than the two parameters, that is, the liquid level and the number of platinum defects are fixed. The other conditions include, for example, the size of the clarification device 102, the temperature of the molten glass MG in the clarification pipe 102a, the temperature of the clarification pipe 102a, the type of constituent materials of the clarification pipe 102a, the type of glass, and the presence or absence of introduction of the following inert gas. The amount of introduction of the inert gas, the content of the clarifying agent of the molten glass MG, and the like.

可知液面水平之值越大(液面高度越低),鉑缺陷數變得越少。其原因如下:若液面高度變低,則氣相空間之體積變大,故而如上述說明般,澄清管102a內之氣流之速度變慢,從而抑制澄清管102a之鉑或鉑合金等之揮發,結果鉑缺陷數變少。 It can be seen that the larger the level of the liquid level (the lower the liquid level), the less the number of platinum defects becomes. The reason is as follows: if the liquid level is lowered, the volume of the gas phase space becomes large, so that the velocity of the gas flow in the clarification pipe 102a becomes slow as described above, thereby suppressing the volatilization of platinum or platinum alloy of the clarification pipe 102a. As a result, the number of platinum defects is reduced.

如圖示般,目標液面水平A係由液面水平之範圍表示(圖中之斜線部分)。目標液面水平A係基於線S而作成。目標液面水平A之下限值被決定為基準液面水平,即線S、與圖5所示之品質基準線Q之交點。所謂品質基準線Q,係指鉑缺陷數之容許值。品質基準線Q例如係根據玻璃基板之購買者,即顧客所要求之品質上之規格而決定,表示特定之鉑缺陷數。具體之鉑缺陷數並無特別限制,可決定為種種,例如可決定為0.001~0.1個/kg之間。圖5中,較品質基準線Q(鉑缺陷數之容許值)而位於左側之區域所製造之玻璃基板被判斷為良品,右側之區域所製造之玻璃基板被判斷為不良品。藉由以液面水平大於該下限值(液面高度較當前之液面水平位於更下方)控制(調整)液面水平,而可將所製造之玻璃基板所含之鉑缺陷數始終抑制為特定值以下。 As shown, the target level A is represented by the range of the level of the liquid level (the shaded portion in the figure). The target liquid level A is created based on the line S. The lower limit value of the target liquid level A is determined as the reference liquid level, that is, the intersection of the line S and the quality reference line Q shown in FIG. The quality reference line Q refers to the allowable value of the number of platinum defects. The quality reference line Q is determined, for example, according to the purchaser of the glass substrate, that is, the quality specifications required by the customer, and indicates the specific number of platinum defects. The number of specific platinum defects is not particularly limited and may be determined to be various, and for example, it may be determined to be between 0.001 and 0.1/kg. In Fig. 5, the glass substrate produced in the region on the left side of the quality reference line Q (the allowable value of the platinum defect number) is judged to be a good product, and the glass substrate produced in the region on the right side is judged to be a defective product. By controlling (adjusting) the liquid level by the liquid level being greater than the lower limit (the liquid level is lower than the current liquid level), the number of platinum defects contained in the manufactured glass substrate can be always suppressed to Below a certain value.

另一方面,目標液面水平A之上限值係由不會使玻璃基板之生產性降低之觀點所決定。若熔融玻璃MG之液面水平變大,則氣相空間之體積變大,而抑制鉑或鉑合金等之揮發,但另一方面,氣相空間之體積增加後,相應地使澄清管102a內之液相(熔融玻璃MG)之量減少,於該量較大之情形時,玻璃基板之生產性降低。根據此種觀點而決定目標液面水平A之上限值。再者,目標液面水平A之上限值未必必須設定,但較佳為設定。 On the other hand, the upper limit of the target liquid level A is determined by the viewpoint that the productivity of the glass substrate is not lowered. When the liquid level of the molten glass MG becomes large, the volume of the gas phase space becomes large, and volatilization of platinum or a platinum alloy or the like is suppressed, but on the other hand, after the volume of the gas phase space is increased, the inside of the clarification pipe 102a is accordingly The amount of the liquid phase (molten glass MG) is reduced, and when the amount is large, the productivity of the glass substrate is lowered. From this point of view, the upper limit of the target liquid level A is determined. Furthermore, the upper limit of the target liquid level A does not necessarily have to be set, but is preferably set.

進而,目標液面水平A之上限值亦可基於與澄清管102a連接之玻璃供給管105之高度位置決定。例如,若使澄清管102a之液面水平較玻璃供給管105之最上部位於更下方,則自玻璃供給管105朝向澄清管102a產生氣流,而使澄清管102a內之氣流之流速變高。即,變得難以抑制澄清管102a之鉑或鉑合金等之揮發。因此,目標液面水平A之上限值較佳為設定為小於與玻璃供給管105之最上部之高度位置對應之液面水平。 Further, the upper limit value of the target liquid level A may be determined based on the height position of the glass supply pipe 105 connected to the clarification pipe 102a. For example, when the liquid level of the clarification pipe 102a is located lower than the uppermost portion of the glass supply pipe 105, an air flow is generated from the glass supply pipe 105 toward the clarification pipe 102a, and the flow velocity of the airflow in the clarification pipe 102a is increased. That is, it becomes difficult to suppress volatilization of platinum or a platinum alloy or the like of the clarification pipe 102a. Therefore, the upper limit value of the target liquid level A is preferably set to be smaller than the liquid level corresponding to the height position of the uppermost portion of the glass supply pipe 105.

將澄清管102a內之熔融玻璃MG之液面水平控制(調整)為以上之目標液面水平,藉此始終將鉑缺陷數控制為特定數以下,並且可抑制玻璃基板之生產性之降低。又,藉由進行將熔融玻璃MG之液面水平設為如上述般決定之目標液面水平之控制(調整),即便例如於顧客所要求之規格變嚴格之情形時,亦可立即應對,而可製造確實地滿足該規格之玻璃基板。於此情形時,於圖5之紙面,將品質基準線Q設定為相對於圖5所示之基準線Q位於更左側。如此,可知必須使與線S之交點移動至圖5所示之當前之交點之上方,且使液面水平增大(使液面高度變低)。 The liquid level of the molten glass MG in the clarification pipe 102a is controlled (adjusted) to the above target liquid level, whereby the number of platinum defects is always controlled to a specific number or less, and the decrease in productivity of the glass substrate can be suppressed. In addition, by controlling (adjusting) the liquid level of the molten glass MG to the target liquid level determined as described above, it is possible to immediately respond to the case where the specifications required by the customer are strict, for example. A glass substrate that satisfies this specification can be manufactured. In this case, on the paper surface of Fig. 5, the quality reference line Q is set to be located to the left side with respect to the reference line Q shown in Fig. 5 . Thus, it can be seen that the intersection with the line S must be moved above the current intersection shown in FIG. 5, and the level of the liquid level is increased (the liquid level is lowered).

再者,本實施形態之方法之控制(調整)對象為熔融玻璃MG之液面水平,但控制(調整)液面水平亦可變為控制(調整)氣相空間之體積。如上述說明般,為了抑制向氣相空間揮發鉑或鉑合金等,只要降 低氣流之流速即可,為了降低氣流之流速,只要增大氣相空間之體積即可。 Further, the control (adjustment) of the method of the present embodiment is the liquid level of the molten glass MG, but the control (adjustment) of the liquid level may also become the volume of the controlled (adjusted) gas phase space. As described above, in order to suppress the evaporation of platinum or platinum alloy into the gas phase space, The flow rate of the low air flow may be, in order to reduce the flow rate of the air flow, it is only necessary to increase the volume of the gas phase space.

上述線及目標液面水平較佳為針對各種變更上述其他條件之情形分別作成。如此,藉由作成複數種,而於玻璃基板之製造開始前,選擇與即將進行之製造條件最相近者,並根據所選擇之線、目標液面水平而控制(調整)液面,藉此可於在任意條件下製造玻璃基板之情形時,抑制鉑或鉑合金等之揮發,並抑制凝聚物之一部分混入熔融玻璃而產生鉑缺陷。 It is preferable that the above-mentioned line and target liquid level are separately prepared for various changes of the other conditions described above. In this way, by making a plurality of types, the liquid crystal substrate can be controlled (adjusted) according to the selected line and the target liquid level before the start of the manufacture of the glass substrate, and the liquid level can be controlled (adjusted) according to the selected line and the target liquid level. When a glass substrate is produced under any conditions, volatilization of platinum or a platinum alloy or the like is suppressed, and a part of the aggregate is suppressed from being mixed into the molten glass to cause platinum defects.

又,液面水平亦可由距澄清管102a之底部之液面高度代替熔融玻璃MG之液面與正交於此之氣相空間之上端之距離來表示。 Further, the liquid level may be represented by a liquid level from the bottom of the clarification pipe 102a instead of the liquid surface of the molten glass MG and the distance from the upper end of the gas phase space orthogonal thereto.

氣流之流速之較佳範圍較佳為5m/min以下,更佳為1m/min以下,進而更佳為0.5m/min以下。 The flow rate of the gas stream is preferably in the range of preferably 5 m/min or less, more preferably 1 m/min or less, still more preferably 0.5 m/min or less.

再者,於連續生產玻璃基板之情形時,在控制(調整)上述熔融玻璃MG之液面水平時,較佳為藉由切斷步驟(ST6)後所進行之玻璃基板之缺陷檢查,而檢測作為鉑或鉑金屬等之凝聚物之雜質,根據該雜質之檢測個數之結果控制(調整)熔融玻璃MG之液面水平。缺陷檢查係識別複數種雜質等缺陷,鉑或鉑金屬等之凝聚物由於相對於其他雜質或缺陷形狀呈特異之形狀,故而可容易識別。 Further, in the case of continuously producing a glass substrate, when controlling (adjusting) the level of the liquid surface of the molten glass MG, it is preferable to detect the defect of the glass substrate by the cutting step (ST6). As an impurity of agglomerates such as platinum or platinum metal, the level of the molten glass MG is controlled (adjusted) based on the number of detected impurities. The defect inspection system recognizes defects such as a plurality of kinds of impurities, and the agglomerates such as platinum or platinum metal can be easily recognized because they have a specific shape with respect to other impurities or defect shapes.

於上述氣相空間之體積及內壁之面積之控制(調整)、及液面水平之控制(調整)之任一實施形態中,關於澄清管102a之溫度,與氣相空間接觸之鉑或鉑合金等之內壁之部分之最高溫度與最低溫度之溫度差可有50℃以上,亦可有150℃以上,還可有250℃以上。於上述溫度差有50℃以上之情形時,通常於氣相空間內,鉑或鉑合金之揮發物於最低溫度之內壁附近,因飽和蒸氣壓之溫度依存性而易變得容易凝聚。然而,如本實施形態般,藉由控制(調整)熔融玻璃MG之液面水平,而使鉑或鉑合金之揮發物變少,使凝聚量亦變少。於此方面而言,於 上述溫度差有50℃以上之情形時,使用本實施形態之澄清管102a時抑制鉑或鉑合金等之凝聚物混入熔融玻璃MG之效果較使用溫度差未達50℃之澄清管之情形發揮更為顯著。 In any of the embodiments of the control (adjustment) of the volume of the gas phase space and the area of the inner wall and the control (adjustment) of the liquid level, the platinum or platinum in contact with the gas phase space with respect to the temperature of the clarification pipe 102a The temperature difference between the highest temperature and the lowest temperature of the inner wall of the alloy or the like may be 50 ° C or more, or 150 ° C or more, or 250 ° C or more. When the temperature difference is 50 ° C or more, the volatile matter of platinum or platinum alloy is usually in the gas phase space near the inner wall of the lowest temperature, and is easily aggregated due to the temperature dependence of the saturated vapor pressure. However, as in the present embodiment, by controlling (adjusting) the liquid level of the molten glass MG, the amount of volatile matter of platinum or platinum alloy is reduced, and the amount of coagulation is also reduced. In this respect, When the temperature difference is 50° C. or higher, the effect of suppressing the incorporation of aggregates such as platinum or platinum alloy into the molten glass MG when using the clarification tube 102a of the present embodiment is more effective than the case of using a clarification tube having a temperature difference of less than 50° C. Significant.

又,澄清管102a之最高溫度可為1400℃以上,亦可為1600℃以上、1630℃以上、進而1650℃以上。如此,於最高溫度較高之情形時,本實施形態之抑制鉑或鉑合金等之凝聚物混入熔融玻璃MG之效果大於使用最高溫度未達1400℃之澄清管之情形。又,若澄清管102a之內壁之最高溫度過低,則例如作為澄清劑氧化錫之反應變得不活躍,熔融玻璃之澄清變得不充分。因此,澄清管102a之內壁之最高溫度較佳為1630℃~1720℃,更佳為1650℃~1720℃。 Further, the maximum temperature of the clarification pipe 102a may be 1400 ° C or higher, or may be 1600 ° C or higher, 1630 ° C or higher, or further 1650 ° C or higher. As described above, when the maximum temperature is high, the effect of suppressing the aggregation of the platinum or the platinum alloy or the like into the molten glass MG in the present embodiment is greater than the case where the clarification tube having the highest temperature of less than 1400 ° C is used. When the maximum temperature of the inner wall of the clarification pipe 102a is too low, for example, the reaction of tin oxide as a clarifying agent becomes inactive, and the clarification of the molten glass becomes insufficient. Therefore, the maximum temperature of the inner wall of the clarification pipe 102a is preferably from 1630 ° C to 1720 ° C, more preferably from 1650 ° C to 1720 ° C.

此種澄清管102a之溫度分佈可使用熱電偶等溫度感測器測量而獲得,又,亦可使用熱傳導模擬而獲得。 The temperature distribution of such a clarification tube 102a can be obtained by measurement using a temperature sensor such as a thermocouple, or can be obtained by using heat conduction simulation.

上述比S/L、或基準液面水平或目標液面水平A之較佳範圍於澄清步驟之處理條件不同時發生變化。因此,例如比S/L、或基準液面水平或目標液面水平A較佳為基於如下條件中之至少一者而決定之值:(1)氣相空間中之氧濃度、(2)熔融玻璃處理裝置之內壁之最高溫度、(3)自熔融玻璃釋出至氣相空間之氧釋出量、(4)熔解步驟中之熔融玻璃之最高溫度與處理步驟中之熔融玻璃之最高溫度之溫度差、及(5)氣相空間中之鉑族金屬(鉑或鉑合金)之蒸氣壓。 The above preferred range of S/L, or reference level level or target level A is varied when the processing conditions of the clarification step are different. Therefore, for example, the ratio S/L, or the reference level level or the target level A is preferably determined based on at least one of the following conditions: (1) oxygen concentration in the gas phase space, and (2) melting. The maximum temperature of the inner wall of the glass treatment device, (3) the amount of oxygen released from the molten glass to the gas phase space, (4) the maximum temperature of the molten glass in the melting step, and the maximum temperature of the molten glass in the treatment step The temperature difference, and (5) the vapor pressure of the platinum group metal (platinum or platinum alloy) in the gas phase space.

例如,於上述(1)之氣相空間中之氧濃度之情形,若使氣相空間中之氧濃度發生變化,則用於抑制鉑或鉑合金等之揮發之較佳之比S/L、基準液面水平或目標液面水平A發生變化。若氣相空間中之氧濃度變高,則鉑或鉑合金等之揮發變得活躍,故而較佳為面積L較 小。又,較佳為熔融玻璃之液面水平較高。然而,若縮小面積L,又,若熔融玻璃之液面水平增高,則體積S亦變小,氧濃度越發上升。因此,氣相空間中之氧濃度於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面成為較大之主因之一。 For example, in the case of the oxygen concentration in the gas phase space of the above (1), if the oxygen concentration in the gas phase space is changed, the ratio S/L and the reference for suppressing the volatilization of platinum or a platinum alloy or the like are preferable. The level of the liquid level or the level A of the target level changes. When the oxygen concentration in the gas phase space becomes high, volatilization of platinum or a platinum alloy or the like becomes active, so that it is preferable that the area L is larger. small. Further, it is preferred that the level of the liquid surface of the molten glass is high. However, if the area L is reduced, and if the level of the molten glass is increased, the volume S is also small, and the oxygen concentration is increased. Therefore, the oxygen concentration in the gas phase space is one of the major factors in determining the preferable ratio S/L for suppressing the volatilization of platinum or platinum alloy or the like, or the reference liquid level or the target liquid level A.

氣相空間中之氧濃度可藉由熔融玻璃中所含之澄清劑例如氧化錫之含量、熔融玻璃之溫度或溫度歷程、導入氣相空間內之惰性氣體之量而得以控制(調整)。熔融玻璃之溫度或溫度歷程係根據熔融玻璃處理裝置之內壁之最高溫度而變化。因此,熔融玻璃處理裝置之內壁之最高溫度於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面亦成為較大之主因之一。 The concentration of oxygen in the gas phase space can be controlled (adjusted) by the amount of a clarifying agent such as tin oxide contained in the molten glass, the temperature or temperature history of the molten glass, and the amount of inert gas introduced into the gas phase space. The temperature or temperature history of the molten glass varies depending on the maximum temperature of the inner wall of the molten glass processing apparatus. Therefore, the maximum temperature of the inner wall of the molten glass processing apparatus is also larger in determining the preferable ratio S/L for suppressing the volatilization of platinum or platinum alloy or the reference liquid level or the target liquid level A. One of the main reasons.

若熔融玻璃中所含之澄清劑例如氧化錫之含量變化,則自熔融玻璃釋出至氣相空間之氧之釋出量亦變化。即,氧化錫之含量越多,則釋出之氧量越上升,氣相空間之氧濃度越上升。因此,自熔融玻璃釋出至氣相空間之氧釋出量於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面亦成為較大之主因之一。就此方面而言,就抑制鉑或鉑合金等之揮發之方面而言,較佳為藉由氧化錫之含量而控制(調整)氣相空間中之氧濃度。因此,就抑制鉑或鉑合金等之揮發之方面而言,氧化錫之含量受到限制,較佳為0.01~0.3莫耳%、較佳為0.03~0.2莫耳。若氧化錫之含量較多,則會產生於熔融玻璃中產生氧化錫之二次結晶之問題,故而不佳。若氧化錫之含量過少,則熔融玻璃之澄清不充分。 If the content of the clarifying agent such as tin oxide contained in the molten glass changes, the amount of oxygen released from the molten glass to the gas phase space also changes. That is, as the content of tin oxide increases, the amount of oxygen released increases, and the oxygen concentration in the gas phase space increases. Therefore, the amount of oxygen released from the molten glass to the gas phase space is determined in terms of the preferred ratio S/L for suppressing the volatilization of platinum or platinum alloy, or the reference liquid level or the target liquid level A. Become one of the main reasons. In this respect, in terms of suppressing volatilization of platinum or a platinum alloy or the like, it is preferred to control (adjust) the oxygen concentration in the gas phase space by the content of tin oxide. Therefore, the content of the tin oxide is limited in terms of suppressing the volatilization of platinum or a platinum alloy or the like, and is preferably 0.01 to 0.3 mol%, preferably 0.03 to 0.2 mol. If the content of tin oxide is large, there is a problem that secondary crystals of tin oxide are generated in the molten glass, which is not preferable. If the content of tin oxide is too small, the clarification of the molten glass is insufficient.

關於熔融玻璃之溫度或溫度歷程,若熔融玻璃之溫度發生變化,則藉由該溫度變化而使還原之氧化劑、例如還原之氧化錫之量、及熔融玻璃之黏度發生變化。因此,自熔融玻璃釋出至氣相空間之氧量亦變化。 Regarding the temperature or temperature history of the molten glass, if the temperature of the molten glass changes, the amount of the reduced oxidizing agent, for example, the amount of the reduced tin oxide, and the viscosity of the molten glass are changed by the temperature change. Therefore, the amount of oxygen released from the molten glass to the gas phase space also changes.

又,流入熔融玻璃處理裝置前之熔解步驟中之熔融玻璃與流入熔融玻璃處理裝置後之處理步驟中之熔融玻璃之溫度差越大,則於熔融玻璃處理裝置中釋出之氧之量越發增加。即,藉由自流入熔融玻璃處理裝置前控制(調整)熔融玻璃處理裝置中之熔融玻璃之溫度歷程,而使自熔融玻璃釋出至氣相空間之氧之釋出量亦發生變化。因此,熔解步驟中之熔融玻璃之最高溫度與處理步驟中之熔融玻璃之最高溫度之溫度差於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面亦成為較大之主因之一。於此情形時,就兼顧鉑或鉑合金等之揮發之抑制及澄清效果之方面而言,上述溫度差較佳為50℃以上200℃以下,更佳為70℃以上150℃以下。 Further, the greater the temperature difference between the molten glass in the melting step before flowing into the molten glass processing apparatus and the molten glass in the processing step after flowing into the molten glass processing apparatus, the more the amount of oxygen released in the molten glass processing apparatus increases. . That is, the amount of oxygen released from the molten glass to the gas phase space is also changed by controlling (adjusting) the temperature history of the molten glass in the molten glass processing apparatus before flowing into the molten glass processing apparatus. Therefore, the temperature difference between the highest temperature of the molten glass in the melting step and the highest temperature of the molten glass in the processing step is determined by a preferred ratio S/L, or a reference liquid level, for determining the volatilization of the platinum or platinum alloy or the like. The aspect of the target level A has also become one of the major causes. In this case, the temperature difference is preferably 50° C. or higher and 200° C. or lower, and more preferably 70° C. or higher and 150° C. or lower in terms of the suppression of the volatilization of the platinum or the platinum alloy or the like.

又,氣相空間中之鉑族金屬(鉑或鉑合金)之蒸氣壓於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面亦成為較大之主因之一。氣相空間中之鉑族金屬(鉑或鉑合金)之蒸氣壓係藉由根據熔融玻璃處理裝置之內壁之溫度揮發之鉑族金屬(鉑或鉑合金)之揮發量而決定。因此,熔融玻璃處理裝置之內壁之溫度於決定用於抑制鉑或鉑合金等之揮發之較佳之比S/L、或基準液面水平或目標液面水平A之方面亦成為較大之主因之一。於內壁之溫度較高、揮發量較多、氣相空間中之鉑族金屬(鉑或鉑合金)之蒸氣壓較高之情形時,即便於如圖3(a)所示之較快之氣流W1存在於氣相空間中之情形時,亦可維持使鉑族金屬(鉑或鉑合金)之蒸氣壓達到飽和蒸氣壓之狀態。於此情形時,為了降低揮發量之絕對量,可控制(調整)比S/L、或基準液面水平或目標液面水平A。就抑制鉑或鉑合金等之揮發及凝聚之方面而言,較佳為氣相空間中之鉑族金屬之蒸氣壓為1Pa~10Pa,更佳為3Pa~10Pa。 Further, the vapor pressure of the platinum group metal (platinum or platinum alloy) in the gas phase space is preferably determined to suppress the volatilization of platinum or platinum alloy or the like, S/L, or the reference liquid level or the target liquid level A. It has also become one of the main reasons for this. The vapor pressure of the platinum group metal (platinum or platinum alloy) in the gas phase space is determined by the amount of volatilization of the platinum group metal (platinum or platinum alloy) which is volatilized according to the temperature of the inner wall of the molten glass processing apparatus. Therefore, the temperature of the inner wall of the molten glass processing apparatus is also a major factor in determining the preferred ratio S/L for suppressing the volatilization of platinum or platinum alloy, or the reference liquid level or the target liquid level A. one. When the temperature of the inner wall is high, the amount of volatilization is large, and the vapor pressure of the platinum group metal (platinum or platinum alloy) in the gas phase space is high, even if it is as shown in FIG. 3(a) When the gas stream W1 is present in the gas phase space, the vapor pressure of the platinum group metal (platinum or platinum alloy) can be maintained at a saturated vapor pressure. In this case, in order to reduce the absolute amount of the volatile amount, the ratio S/L, or the reference liquid level or the target liquid level A can be controlled (adjusted). The vapor pressure of the platinum group metal in the gas phase space is preferably from 1 Pa to 10 Pa, more preferably from 3 Pa to 10 Pa, in terms of suppressing volatilization and agglomeration of platinum or a platinum alloy or the like.

藉由使氣相空間中之鉑族金屬之蒸氣壓為1Pa~10Pa,熔融玻璃處理裝置之內壁之最高溫度為1630℃~1720℃,且於將氣相空間之 體積設為S[m3]、將與氣相空間接觸之鉑族金屬之面積設為L[m2]時,將比S/L設為17[m]以上,而可抑制鉑或鉑合金等之揮發及凝聚。此時,氣相空間之氧濃度較佳為2%以下。又,所製造之玻璃基板之氧化錫之含量較佳為0.01~0.3莫耳%。 By setting the vapor pressure of the platinum group metal in the gas phase space to 1 Pa to 10 Pa, the maximum temperature of the inner wall of the molten glass processing apparatus is 1630 ° C to 1720 ° C, and the volume of the gas phase space is set to S [m 3 When the area of the platinum group metal in contact with the gas phase space is L [m 2 ], the ratio S/L is set to 17 [m] or more, and volatilization and aggregation of platinum or a platinum alloy or the like can be suppressed. At this time, the oxygen concentration in the gas phase space is preferably 2% or less. Further, the content of tin oxide in the produced glass substrate is preferably 0.01 to 0.3 mol%.

本實施形態中,為使熔融玻璃脫泡而使用對澄清管102a進行通電加熱之方式。通電加熱之方式由於係直接加熱澄清管102a,故而與於澄清管之周圍設置加熱器等熱源而間接地加熱澄清管之情形相比,與氣相空間接觸之鉑或鉑合金等之內壁之溫度變高,溫度梯度亦變高,最高溫度與最低溫度之溫度差容易變大。因此,如上所述,於為先前之澄清管時,鉑或鉑合金等之凝聚物容易變多。然而,本實施形態中,由於抑制鉑或鉑合金之揮發,故而鉑或鉑合金之凝聚物較少。於此方面而言,使用對澄清管102a進行通電加熱之方式之情形時抑制鉑或鉑合金等之凝聚物混入熔融玻璃MG之本實施形態之效果大於使用間接加熱方式之澄清管。 In the present embodiment, a method of electrically heating the clarification pipe 102a is used to defoam the molten glass. In the method of energizing and heating, since the clarification pipe 102a is directly heated, an inner wall of platinum or a platinum alloy or the like which is in contact with the gas phase space is provided in comparison with a case where a heat source such as a heater is provided around the clarification pipe to indirectly heat the clarification pipe. As the temperature becomes higher, the temperature gradient also becomes higher, and the temperature difference between the highest temperature and the lowest temperature tends to become large. Therefore, as described above, in the case of the prior clarification tube, aggregates such as platinum or a platinum alloy are likely to be increased. However, in the present embodiment, since the volatilization of platinum or a platinum alloy is suppressed, the aggregate of platinum or platinum alloy is small. In this regard, in the case where the clarification pipe 102a is electrically heated, the effect of suppressing the incorporation of aggregates such as platinum or platinum alloy into the molten glass MG is greater than that of the clarification pipe using the indirect heating method.

又,於為對澄清管102a進行通電加熱之方式之情形時,有為了於澄清管102a之管之周圍均勻地通入電流,而將凸緣設置於澄清管102a之周圍之情況。凸緣係為了防止因熱而導致之破損而被冷卻。又,凸緣作為冷卻片(cooling fin)發揮功能。因此,澄清管102a之設置有凸緣之部分之內壁之溫度容易降低。即,於澄清管102a之設置有凸緣之部分之內壁容易產生鉑或鉑合金之凝聚。即便於此種情形時,本實施形態由於抑制鉑或鉑合金之揮發,故而鉑或鉑合金之凝聚物較少。因此,即便於在澄清管102a使用凸緣之情形時,抑制鉑或鉑合金等之凝聚物混入熔融玻璃MG之本實施形態之效果仍大於先前之澄清管。 In the case where the clarification pipe 102a is electrically heated, a flange is provided around the clarification pipe 102a in order to uniformly supply a current around the pipe of the clarification pipe 102a. The flange is cooled in order to prevent damage due to heat. Further, the flange functions as a cooling fin. Therefore, the temperature of the inner wall of the portion of the clarification pipe 102a where the flange is provided is easily lowered. That is, the inner wall of the portion of the clarification pipe 102a where the flange is provided is liable to cause aggregation of platinum or a platinum alloy. That is, in this case, in the present embodiment, since the volatilization of platinum or a platinum alloy is suppressed, the aggregate of platinum or platinum alloy is small. Therefore, even when the flange is used in the clarification pipe 102a, the effect of suppressing the incorporation of aggregates such as platinum or platinum alloy into the molten glass MG is greater than that of the prior clarification pipe.

又,亦可於本實施形態之澄清管102a之氣相空間設置氣體導入裝置以導入熔融玻璃及鉑或鉑合金等及惰性氣體。於此情形時,於氣相空間設置例如導入惰性氣體之噴嘴。藉由將惰性氣體導入氣相空間 內,而可使氣相空間內之氧分壓或氧濃度降低。氧氣係與鉑或鉑合金等結合而促進揮發。因此,藉由降低氧分壓,而可抑制自澄清管102a之內壁揮發鉑或鉑合金。此時,於抑制鉑或鉑合金等之揮發物之凝聚之方面而言,較佳為將惰性氣體自與氣相空間接觸之澄清管102a之內壁中內壁之溫度較低之部分導入氣相空間內,並使揮發掉之鉑或鉑合金自氣相空間內之溫度較低之區域向溫度較高之區域製造氣流。例如,較佳為將惰性氣體自澄清管102a之內壁中與周圍之溫度相比溫度較低之部分,例如溫度極小之部分導入氣相空間內。特佳為自澄清管102a之內壁中溫度最低之部分導入氣相空間內。由於自澄清管102a中之易凝聚揮發物之內壁之溫度較低之部分導入惰性氣體,故而使氧分壓降低。因此,根據揮發物之飽和蒸氣壓之分壓依存性而抑制揮發物之凝聚。 Further, a gas introduction device may be provided in the gas phase space of the clarification pipe 102a of the present embodiment to introduce molten glass, platinum, platinum alloy or the like and an inert gas. In this case, for example, a nozzle for introducing an inert gas is provided in the gas phase space. By introducing an inert gas into the gas phase space Internally, the partial pressure of oxygen or the concentration of oxygen in the gas phase space can be lowered. The oxygen system combines with platinum or a platinum alloy to promote volatilization. Therefore, by lowering the oxygen partial pressure, it is possible to suppress the evaporation of platinum or a platinum alloy from the inner wall of the clarification pipe 102a. In this case, in order to suppress aggregation of volatile matter such as platinum or platinum alloy, it is preferred to introduce the inert gas into the gas from the lower portion of the inner wall of the inner wall of the clarification pipe 102a which is in space contact with the gas phase. In the phase space, the volatilized platinum or platinum alloy is made to flow from a region of lower temperature in the gas phase space to a region of higher temperature. For example, it is preferred that the inert gas is introduced into the gas phase space from a portion of the inner wall of the clarification pipe 102a which is lower in temperature than the surrounding temperature, for example, a portion having a very small temperature. It is particularly preferable to introduce the portion having the lowest temperature from the inner wall of the clarification pipe 102a into the gas phase space. Since the inert gas is introduced from the portion where the temperature of the inner wall of the condensed volatile matter in the clarified pipe 102a is low, the partial pressure of oxygen is lowered. Therefore, the agglomeration of the volatiles is suppressed depending on the partial pressure dependence of the saturated vapor pressure of the volatile matter.

作為惰性氣體,可使用例如氮氣、或氬氣、氦氣、氖氣等稀有氣體或該等氣體之混合氣體。 As the inert gas, for example, nitrogen gas, or a rare gas such as argon gas, helium gas or neon gas or a mixed gas of the gases can be used.

本實施形態之澄清管102a內之氣相空間與大氣連接之部分為通氣管107。該通氣管107之形態為呈煙囪狀地自澄清管102a之頂壁直線地延伸之形狀,但通氣管107並不限制於該形狀,亦可為彎曲之形狀。通氣管107較佳為於通氣管107設置溫度調整裝置,以使鉑或鉑合金等之揮發物不會接觸於通氣管107之溫度較低之部分而凝聚。 The portion of the gas phase space in the clarification pipe 102a of the present embodiment that is connected to the atmosphere is the vent pipe 107. The vent pipe 107 has a shape that linearly extends from the top wall of the clarification pipe 102a in a chimney shape, but the vent pipe 107 is not limited to the shape, and may have a curved shape. The vent pipe 107 is preferably provided with a temperature adjusting means for the vent pipe 107 so that volatile matter such as platinum or platinum alloy does not contact the lower temperature portion of the vent pipe 107 to be agglomerated.

再者,對使用澄清裝置102作為熔融玻璃處理裝置進行了說明,但熔融玻璃處理裝置亦可適用於攪拌裝置103。然而,就以下之原因而言,較佳為適用於澄清管102。 Further, although the use of the clarification device 102 as the molten glass treatment device has been described, the molten glass treatment device may be applied to the agitation device 103. However, it is preferred to apply to the clarification tube 102 for the following reasons.

即,澄清裝置102係自澄清至即將成形前於使用鉑或鉑合金等之複數個裝置中將熔融玻璃之溫度加熱至最高之裝置。因此,於澄清管102a中,鉑或鉑合金等之揮發於上述裝置中最激烈。而且,藉由澄清管102a中所進行之脫泡而釋出至氣相空間之氣體之成分中含有大量促 進鉑或鉑合金等之揮發之氧氣,故而氣相空間內之氧分壓大於大氣。因此,於氣相空間內,鉑或鉑合金等自內壁進一步揮發。進而,由於澄清管102a與攪拌裝置103等其他裝置相比,內壁之最高溫度與最低溫度之差較大,揮發物之飽和蒸氣壓之差亦變大,故而於揮發物經由通氣管107被排出至大氣之前易產生揮發物之凝聚。又,於澄清管102a中,與其他裝置相比氣流之流動較大。因此,為了抑制揮發物之凝聚,較佳為將比S/L、或液面水平之控制(調整)適用於澄清裝置102。 That is, the clarification device 102 is a device that heats the temperature of the molten glass to the highest in a plurality of devices using platinum or a platinum alloy, just before molding. Therefore, in the clarification pipe 102a, the volatilization of platinum or a platinum alloy or the like is most intense in the above apparatus. Moreover, the composition of the gas released into the gas phase space by the defoaming performed in the clarification tube 102a contains a large amount of Oxygen volatilized by platinum or platinum alloy, etc., so that the partial pressure of oxygen in the gas phase space is greater than the atmosphere. Therefore, in the gas phase space, platinum or a platinum alloy or the like is further volatilized from the inner wall. Further, since the difference between the maximum temperature and the minimum temperature of the inner wall is larger than that of the other means such as the stirring device 103, the difference between the saturated vapor pressure of the volatile matter is also increased, so that the volatile matter is passed through the vent pipe 107. Condensation of volatiles is likely to occur before being discharged to the atmosphere. Further, in the clarification pipe 102a, the flow of the airflow is larger than that of the other devices. Therefore, in order to suppress the aggregation of the volatile matter, it is preferable to apply the control (adjustment) of the ratio S/L or the liquid level to the clarification device 102.

又,於製作之玻璃基板為板厚較薄之玻璃基板,例如板厚為0.5mm以下、進而為0.3mm以下、進而為0.1mm以下之玻璃基板時,本實施形態之抑制鉑或鉑合金等之揮發物之凝聚之效果與板厚較厚之玻璃基板相比較為顯著。凝聚於澄清管102a等之內壁之鉑或鉑合金等之凝聚物之一部分成為微粒子而掉落至熔融玻璃中,混入熔融玻璃中而含有於玻璃基板。於此情形時,玻璃基板之板厚越薄,則成為缺陷之微粒子位於玻璃基板之表面之情況越多。位於玻璃基板之表面之微粒子若於例如使用玻璃基板之面板製造步驟中脫離,則脫離之部分成為凹部,使於玻璃基板上形成之薄膜無法均勻地形成,形成畫面之顯示缺陷。因此,如本實施形態般於澄清管102a中抑制鉑或鉑合金等之揮發,鉑或鉑合金等之凝聚物之一部分成為雜質而混入熔融玻璃之效果於玻璃基板之板厚越薄時越會增大。 In addition, when the glass substrate to be produced is a glass substrate having a small thickness, for example, a glass substrate having a thickness of 0.5 mm or less, further 0.3 mm or less, and further 0.1 mm or less, the platinum or platinum alloy of the present embodiment is inhibited. The effect of the agglomeration of the volatiles is remarkable compared to the glass substrate having a thick plate thickness. A part of the aggregate of platinum or a platinum alloy or the like which is condensed on the inner wall of the clarification pipe 102a or the like is fine particles, is dropped into the molten glass, and is mixed into the molten glass to be contained in the glass substrate. In this case, the thinner the thickness of the glass substrate, the more the fine particles which are defective are located on the surface of the glass substrate. When the fine particles on the surface of the glass substrate are detached in the panel manufacturing step using, for example, a glass substrate, the portion to be detached becomes a concave portion, and the film formed on the glass substrate cannot be uniformly formed, thereby forming a display defect of the screen. Therefore, in the clarification pipe 102a, the volatilization of platinum or a platinum alloy or the like is suppressed in the clarification pipe 102a, and one of the aggregates such as platinum or a platinum alloy is an impurity and is mixed into the molten glass, and the effect becomes thinner when the thickness of the glass substrate is thinner. Increase.

(玻璃組成) (glass composition)

本實施形態中,若為含有氧化錫之無鹼玻璃基板、或含有氧化錫之微鹼玻璃基板,則本實施形態之效果顯著。無鹼玻璃或微鹼玻璃與鹼玻璃相比,玻璃黏度較高。因此,於熔解步驟中,必須使熔融溫度升高,由於大量氧化錫於熔解步驟中被還原,故而為了獲得澄清效果,必須使澄清步驟中之熔融玻璃溫度升高,進而促進氧化錫之還 原,且使熔融玻璃黏度降低。即,於製造含有氧化錫之無鹼玻璃基板、或含有氧化錫之微鹼玻璃基板之情形時,由於必須使澄清步驟中之熔融玻璃溫度升高,故而容易產生鉑或鉑合金等之揮發。此處,本說明書中,所謂無鹼玻璃基板,係指實質上不含有鹼金屬氧化物(Li2O、K2O、及Na2O)之玻璃。又,所謂微鹼玻璃,係指鹼金屬氧化物之含量(Li2O、K2O、及Na2O之合計含量)超過0且為0.8莫耳%以下之玻璃。 In the present embodiment, the effect of the present embodiment is remarkable in the case of an alkali-free glass substrate containing tin oxide or a micro-alkali glass substrate containing tin oxide. Alkali-free glass or microalkali glass has a higher glass viscosity than alkali glass. Therefore, in the melting step, the melting temperature must be increased. Since a large amount of tin oxide is reduced in the melting step, in order to obtain a clarifying effect, it is necessary to raise the temperature of the molten glass in the clarification step, thereby promoting the reduction of tin oxide. And the viscosity of the molten glass is lowered. In other words, in the case of producing an alkali-free glass substrate containing tin oxide or a micro-alkali glass substrate containing tin oxide, since the temperature of the molten glass in the clarification step must be increased, volatilization of platinum or a platinum alloy or the like is likely to occur. Here, in the present specification, the alkali-free glass substrate means a glass which does not substantially contain an alkali metal oxide (Li 2 O, K 2 O, and Na 2 O). In addition, so-called micro-alkali glass, the content of alkali metal oxides means (Li 2 O, K 2 O , and the total content of Na 2 O of) more than 0 and 0.8 mole% or less of the glass.

作為本實施形態中製造之玻璃基板,例示有以下玻璃組成之玻璃基板。因此,以使玻璃基板具有以下之玻璃組成之方式調製玻璃原料。本實施形態中製造之玻璃基板例如含有SiO2 55~75莫耳%、Al2O3 5~20莫耳%、B2O3 0~15莫耳%、RO 5~20莫耳%(RO為MgO、CaO、SrO及BaO之合計含量)、R'2O 0~0.4莫耳%(R'為Li2O、K2O、及Na2O之合計含量)、SnO2 0.01~0.4莫耳%。 As the glass substrate produced in the present embodiment, a glass substrate having the following glass composition is exemplified. Therefore, the glass raw material is prepared in such a manner that the glass substrate has the following glass composition. The glass substrate produced in the present embodiment contains, for example, SiO 2 55 to 75 mol%, Al 2 O 3 5 to 20 mol%, B 2 O 3 0 to 15 mol%, and RO 5 to 20 mol% (RO). It is the total content of MgO, CaO, SrO, and BaO), R' 2 O 0 to 0.4 mol% (R' is the total content of Li 2 O, K 2 O, and Na 2 O), and SnO 2 is 0.01 to 0.4 mol. ear%.

此時,亦可為含有SiO2、Al2O3、B2O3、及RO(R為Mg、Ca、Sr及Ba中上述玻璃基板所含有之全部元素)中之至少任一種,且莫耳比((2×SiO2)+Al2O3)/((2×B2O3)+RO)為4.0以上,可達成本實施形態之效果,即減少泡與未熔解物之產生之效果。即,莫耳比((2×SiO2)+Al2O3)/((2×B2O3)+RO)為4.0以上之玻璃係高溫黏性較高之玻璃之一例。高溫黏性較高之玻璃由於通常必須將澄清步驟中之熔融玻璃溫度設為較高,故而容易產生鉑或鉑合金等之揮發。即,於製造具有此種組成之玻璃基板之情形時,抑制鉑或鉑合金等之凝聚物作為雜質混入熔融玻璃中之本實施形態之效果變得顯著。再者,所謂高溫黏性係表示熔融玻璃變為高溫時之玻璃之黏性,此處所謂之高溫係表示例如1300℃以上。 In this case, at least one of SiO 2 , Al 2 O 3 , B 2 O 3 , and RO (R is all of the elements contained in the glass substrate of Mg, Ca, Sr, and Ba) may be contained. The ear ratio ((2×SiO 2 )+Al 2 O 3 )/((2×B 2 O 3 )+RO) is 4.0 or more, which can achieve the effect of the cost embodiment, that is, reduce the generation of bubbles and unmelted substances. effect. That is, the molar ratio ((2 × SiO 2 ) + Al 2 O 3 ) / ((2 × B 2 O 3 ) + RO) is an example of a glass having a high temperature viscosity of 4.0 or more. Since the glass having a high temperature viscosity is generally required to have a high temperature of the molten glass in the clarification step, volatilization of platinum or a platinum alloy or the like is liable to occur. In other words, in the case of producing a glass substrate having such a composition, the effect of suppressing the aggregation of a platinum or a platinum alloy or the like as an impurity in the molten glass is remarkable. In addition, the high-temperature viscosity system means the viscosity of the glass when the molten glass becomes high temperature, and the high temperature here means, for example, 1300 ° C or more.

根據本實施形態,即便玻璃基板中之鹼金屬氧化物之含有率為0~0.8莫耳%,亦可抑制鉑或鉑合金等之凝聚物作為雜質混入熔融玻璃 中。由於鹼金屬氧化物之含有率越小,高溫黏性變得越高,故而鹼金屬氧化物之含有率為0~0.8莫耳%之玻璃與鹼金屬氧化物之含有率超過0.8莫耳%之玻璃相比,高溫黏性較高。高溫黏性較高之玻璃通常必須將澄清步驟中之熔融玻璃溫度設為較高,故而容易產生鉑或鉑合金等之揮發。即,於使用該高溫黏性較高之玻璃時,抑制鉑或鉑合金等之凝聚物作為雜質混入熔融玻璃中之本實施形態之效果變得顯著。 According to the present embodiment, even if the content of the alkali metal oxide in the glass substrate is 0 to 0.8 mol%, it is possible to suppress aggregation of agglomerates such as platinum or platinum alloy as impurities into the molten glass. in. The lower the content of the alkali metal oxide, the higher the viscosity at high temperature, and the content of the alkali metal oxide is 0 to 0.8 mol%, and the content of the glass and the alkali metal oxide is more than 0.8 mol%. Compared with glass, high temperature viscosity is higher. The glass having a high viscosity at a high temperature usually has to have a higher temperature of the molten glass in the clarification step, so that volatilization of platinum or a platinum alloy or the like is liable to occur. In other words, when the glass having a high temperature and high viscosity is used, the effect of suppressing the aggregation of the platinum or the platinum alloy or the like as an impurity in the molten glass is remarkable.

於本實施形態中使用之熔融玻璃亦可為於黏度為102.5泊時之溫度為1500~1700℃之玻璃組成。如此,由於高溫黏性較高之玻璃通常必須將澄清步驟中之熔融玻璃溫度設為較高,故而容易產生鉑或鉑合金等之揮發。即,即便為高溫黏性之玻璃組成,本實施形態之上述效果亦變得顯著。 The molten glass used in the present embodiment may be a glass having a viscosity of 10 to 2.5 poise and a temperature of 1,500 to 1,700 °C. As described above, since the glass having a high temperature and high viscosity generally has to have a high temperature of the molten glass in the clarification step, volatilization of platinum or a platinum alloy or the like is likely to occur. That is, even in the case of a high-temperature viscous glass composition, the above-described effects of the present embodiment are remarkable.

於本實施形態中使用之熔融玻璃之應變點可為650℃以上,更佳為660℃以上,進而較佳為690℃以上,特佳為730℃以上。又,應變點較高之玻璃有使黏度為102.5泊之熔融玻璃之溫度變高之傾向。即,越是製造應變點較高之玻璃基板之情形,本實施形態之上述效果變得越顯著。 The strain point of the molten glass used in the present embodiment may be 650 ° C or higher, more preferably 660 ° C or higher, further preferably 690 ° C or higher, and particularly preferably 730 ° C or higher. Further, the glass having a higher strain point tends to have a higher temperature of the molten glass having a viscosity of 10 2.5 poise. In other words, the above-described effects of the present embodiment become more remarkable as the case of producing a glass substrate having a higher strain point.

又,於以成為含有氧化錫,且黏度為102.5泊時之熔融玻璃之溫度成為1500℃以上之玻璃之方式將玻璃原料熔解之情形時,本實施形態之上述效果變得更顯著,黏度為102.5泊時之熔融玻璃之溫度例如為1500℃~1700℃,亦可為1550℃~1650℃。 In the case where the glass raw material is melted so that the temperature of the molten glass containing tin oxide and having a viscosity of 10 2.5 poise is 1500 ° C or higher, the above-described effects of the present embodiment become more remarkable, and the viscosity is The temperature of the molten glass at 10 2.5 poise is, for example, 1500 ° C to 1700 ° C, and may be 1550 ° C to 1650 ° C.

本實施形態中製造之玻璃基板對於包含平板顯示器用玻璃基板在內之顯示器用玻璃基板而言較佳。對於使用IGZO(Indium Gallium Zinc Oxide,銦、鎵、鋅、氧)等氧化物半導體之氧化物半導體顯示器用玻璃基板及使用LTPS(Low Temperature Poly Silicon,低溫多晶矽)半導體之LTPS顯示器用玻璃基板而言較佳。又,本實施形態中製造之玻璃基板對於要求鹼金屬氧化物之含量極少之液晶顯示器用玻璃基 板而言較佳。又,對於有機EL(Electro Luminescence,電致發光)顯示器用玻璃基板而言亦較佳。換言之,本實施形態之玻璃基板之製造方法對於顯示器用玻璃基板之製造而言較佳,尤其是對於液晶顯示器用玻璃基板之製造而言較佳。 The glass substrate produced in the present embodiment is preferable for a glass substrate for a display including a glass substrate for a flat panel display. For a glass substrate for an oxide semiconductor display using an oxide semiconductor such as IGZO (Indium Gallium Zinc Oxide), and a glass substrate for an LTPS display using LTPS (Low Temperature Poly Silicon) semiconductor Preferably. Further, in the glass substrate produced in the present embodiment, a glass base for a liquid crystal display having a very small content of an alkali metal oxide is required. The board is preferred. Further, it is also preferable for a glass substrate for an organic EL (Electro Luminescence) display. In other words, the method for producing a glass substrate of the present embodiment is preferable for the production of a glass substrate for a display, and particularly for the production of a glass substrate for a liquid crystal display.

又,本實施形態中製造之玻璃基板亦可適用於覆蓋玻璃、磁碟用玻璃、太陽電池用玻璃基板等。 Further, the glass substrate produced in the present embodiment can also be applied to a cover glass, a glass for a disk, a glass substrate for a solar cell, or the like.

(實施例1) (Example 1)

為了確認本實施形態之控制(調整)比S/L之效果,將比S/L進行各種變化,而檢查混入熔融玻璃中之包含鉑或鉑合金等之凝聚物之雜質之個數。 In order to confirm the effect of the control (adjustment) ratio S/L of the present embodiment, the number of impurities including the aggregates of platinum or platinum alloy mixed in the molten glass was examined by changing the ratio S/L.

詳細而言,以使所製造之玻璃基板成為上述玻璃組成之方式於熔解裝置中將玻璃原料熔解而產生熔融玻璃後,於澄清裝置102中進行熔融玻璃之澄清。繼而,進行均質化、利用溢流下拉法之成形、徐冷、及切斷,從而獲得平板顯示器用玻璃基板。澄清裝置102之最高溫度為1710℃,澄清裝置102之最高溫度與最低溫度之差為250℃。將使比S/L隨時間發生各種變化之情形時之包含鉑或鉑合金等之凝聚物之雜質之關係示於圖6(圖6中之橫軸為時間)。圖6係表示比S/L與缺點密度之關係之圖。圖中之所謂缺點密度係表示每單位重量之鉑或鉑合金等之凝聚物數量。圖6中,將缺點密度最大之情形設為1,對於其他情形,以比例表示缺點密度。圖6中之虛線為缺陷密度比之近似曲線。如圖6所示,若將比S/L設為17[m]以上,則可將缺點密度比設為0.5以下。又,若將比S/L設為25[m]以上,則可將缺點密度比設為0.3以下。 Specifically, the glass raw material is melted in the melting device to form the molten glass so that the glass substrate to be produced becomes the glass composition, and then the molten glass is clarified in the clarification device 102. Then, homogenization, molding by the overflow down-draw method, cold cooling, and cutting were carried out to obtain a glass substrate for a flat panel display. The maximum temperature of the clarification device 102 is 1710 ° C, and the difference between the highest temperature and the lowest temperature of the clarification device 102 is 250 ° C. The relationship between the impurities including the aggregates of platinum or platinum alloy when the S/L changes with time is shown in Fig. 6 (the horizontal axis in Fig. 6 is time). Fig. 6 is a graph showing the relationship between S/L and the density of defects. The so-called defect density in the figure means the amount of aggregates per unit weight of platinum or platinum alloy. In Fig. 6, the case where the density of the defects is the largest is set to 1, and for other cases, the density of the defects is expressed in proportion. The dotted line in Fig. 6 is an approximate curve of the defect density ratio. As shown in FIG. 6, when the ratio S/L is 17 [m] or more, the defect density ratio can be made 0.5 or less. In addition, when the ratio S/L is 25 [m] or more, the defect density ratio can be made 0.3 or less.

(實施例2) (Example 2)

為了確認本實施形態之控制(調整)液面水平之效果,而使熔融玻璃之液面水平發生各種變化,並檢查混入熔融玻璃中之包含鉑或鉑合 金等之凝聚物之雜質之個數。 In order to confirm the effect of controlling (adjusting) the liquid level in the present embodiment, various changes are made to the level of the molten glass, and the inclusion of platinum or platinum in the molten glass is examined. The number of impurities in the agglomerates of gold and the like.

詳細而言,以使所製造之玻璃基板成為上述組成之方式於熔解裝置中將玻璃原料熔解而產生熔融玻璃後,於澄清裝置中進行熔融玻璃之澄清。繼而,進行攪拌、利用溢流下拉法之成形、徐冷、及切斷,從而獲得平板顯示器用玻璃基板。澄清裝置之最高溫度為1710℃,澄清裝置之最高溫度與最低溫度之差為250℃。檢查將液面水平控制(調整)為目標液面水平A之範圍而製造之100片玻璃基板,結果發現與未將液面水平控制(調整)為目標液面水平A之範圍內,而於較目標液面水平A小之情形時製造之100片玻璃基板相比,可使鉑缺陷數成為1/3以下。 Specifically, the glass raw material is melted in the melting apparatus to form the molten glass so that the glass substrate to be produced has the above-described composition, and then the molten glass is clarified in the clarification device. Then, the glass substrate for a flat panel display was obtained by stirring, forming by the overflow down-draw method, undercooling, and cutting. The maximum temperature of the clarification device is 1710 ° C, and the difference between the highest temperature and the lowest temperature of the clarification device is 250 ° C. 100 pieces of glass substrates manufactured by controlling the liquid level level (adjusted) to the target liquid level A were examined, and it was found that the liquid level was not controlled (adjusted) to the target liquid level A, but When the target liquid level A is small, the number of platinum defects can be made 1/3 or less as compared with the 100 glass substrates manufactured.

以上,詳細地對本發明之玻璃基板之製造方法、玻璃基板製造裝置、及熔融玻璃處理裝置進行了說明,但本發明並不限定於上述實施形態,當然可於不脫離本發明之主旨之範圍內,進行各種改良或變更。 The glass substrate manufacturing method, the glass substrate manufacturing apparatus, and the molten glass processing apparatus of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments, and it goes without departing from the gist of the present invention. , carry out various improvements or changes.

102‧‧‧澄清裝置 102‧‧‧Clarification device

102a‧‧‧澄清管 102a‧‧‧Clarification tube

104、105‧‧‧玻璃供給管 104, 105‧‧‧ glass supply tube

107‧‧‧通氣管 107‧‧‧ snorkel

MG‧‧‧熔融玻璃 MG‧‧‧ molten glass

W1、W2‧‧‧氣流 W1, W2‧‧‧ airflow

Claims (13)

一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;及處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔融玻璃處理裝置具有由上述熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;且上述處理步驟中,使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a treatment step of treating the molten glass in a molten glass processing apparatus having the above a gas phase space formed by the liquid surface and the inner wall of the molten glass, and a liquid phase of the molten glass, and at least a portion of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal; and in the above processing step, Suppressing the ratio S/L of the area L[m 2 ] of the platinum group metal of the inner wall in contact with the gas phase space to the volume S[m 3 ] of the gas phase space is 17 [m] or more Volatilization of the platinum group metal of the molten glass processing apparatus. 如請求項1之玻璃基板之製造方法,其中係藉由控制上述熔融玻璃之液面水平而控制上述比。 A method of producing a glass substrate according to claim 1, wherein the ratio is controlled by controlling a level of the liquid surface of the molten glass. 如請求項2之玻璃基板之製造方法,其中係預先求出鉑缺陷數與上述熔融玻璃處理裝置中之上述熔融玻璃之液面水平之相關關係,並將與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平決定為基準液面水平,上述處理步驟係基於該基準液面水平而控制上述液面水平。 The method for producing a glass substrate according to claim 2, wherein the correlation between the number of platinum defects and the liquid level of the molten glass in the molten glass processing apparatus is determined in advance, and the above-mentioned tolerance value of the number of platinum defects is determined. The level of the liquid level of the molten glass processing apparatus is determined as the reference level, and the above-described processing step controls the level of the liquid level based on the level of the reference level. 一種玻璃基板之製造方法,其特徵在於包含:熔解步驟,其將玻璃之原料熔解而產生熔融玻璃;處理步驟,其於熔融玻璃處理裝置中處理上述熔融玻璃,該熔融玻璃處理裝置具有由熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;及成形步驟,其將上述處理步驟中處理過之熔融玻璃成形為平 板玻璃;且該玻璃基板之製造方法係預先求出鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,並將與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平決定為基準液面水平,上述處理步驟係基於該基準液面水平而控制上述液面水平,使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述鉑族金屬之揮發。 A method for producing a glass substrate, comprising: a melting step of melting a raw material of glass to produce molten glass; and a processing step of treating the molten glass in a molten glass processing apparatus having a molten glass a gas phase space formed by the liquid surface and the inner wall, and a liquid phase of the molten glass, and at least a portion of the inner wall surrounding the gas phase space is composed of a material containing a platinum group metal; and a forming step of the above treatment The molten glass treated in the step is formed into a flat glass; and the method for producing the glass substrate is to determine the correlation between the number of platinum defects and the liquid level of the molten glass processing apparatus in advance, and to correspond to the allowable value of the number of platinum defects. The liquid level of the molten glass processing apparatus is determined as a reference liquid level, and the processing step controls the level of the liquid level based on the reference liquid level to make the platinum group metal of the inner wall in contact with the gas phase space. the area L [m 2] and that the volume of the gas space S [m 3] the ratio S / L is 17 [m] of the above embodiment, the above-described inhibition Volatilization of platinum group metals. 如請求項3或4之玻璃基板之製造方法,其中上述處理步驟係基於以包含上述基準液面水平之方式決定之目標液面水平範圍而控制液面水平。 The method of producing a glass substrate according to claim 3 or 4, wherein the processing step controls the liquid level based on a target liquid level level determined in a manner including the reference liquid level. 如請求項1或4之玻璃基板之製造方法,其中上述比係基於如下條件中之至少1者而決定之值:(1)上述氣相空間中之氧濃度、(2)上述熔融玻璃處理裝置之上述內壁之最高溫度、(3)自上述熔融玻璃釋出至上述氣相空間之氧釋出量、(4)上述熔解步驟中之上述熔融玻璃之最高溫度與上述處理步驟中之上述熔融玻璃之最高溫度之溫度差、及(5)上述氣相空間中之上述鉑族金屬之蒸氣壓。 The method for producing a glass substrate according to claim 1 or 4, wherein the ratio is determined based on at least one of the following conditions: (1) an oxygen concentration in the gas phase space, and (2) the molten glass processing apparatus. a maximum temperature of the inner wall, (3) an amount of oxygen released from the molten glass to the gas phase space, (4) a maximum temperature of the molten glass in the melting step, and the melting in the processing step The temperature difference between the highest temperature of the glass and (5) the vapor pressure of the platinum group metal in the gas phase space. 如請求項1或4之玻璃基板之製造方法,其中上述氣相空間中之鉑族金屬之蒸氣壓為1Pa~10Pa,上述熔融玻璃處理裝置之上述內壁之最高溫度為1630℃~1720℃。 The method for producing a glass substrate according to claim 1 or 4, wherein a vapor pressure of the platinum group metal in the gas phase space is 1 Pa to 10 Pa, and a maximum temperature of the inner wall of the molten glass processing apparatus is 1630 ° C to 1720 ° C. 如請求項1或4之玻璃基板之製造方法,其中與上述氣相空間接觸之上述內壁之上述鉑族金屬之部分之最高溫度與最低溫度之溫度差為50℃以上。 The method for producing a glass substrate according to claim 1 or 4, wherein a temperature difference between a maximum temperature and a minimum temperature of a portion of the platinum group metal of the inner wall in contact with the gas phase space is 50 ° C or higher. 如請求項1或4之玻璃基板之製造方法,其中上述熔融玻璃處理 裝置係進行熔融玻璃之澄清之澄清裝置。 A method of producing a glass substrate according to claim 1 or 4, wherein said molten glass treatment The apparatus is a clarification device for clarification of molten glass. 一種熔融玻璃處理裝置,其特徵在於:其係具有由熔融玻璃之液面與內壁所形成之氣相空間、及熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包括控制部,其使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述氣相空間內之上述鉑族金屬之揮發。 A molten glass processing apparatus characterized by comprising a gas phase space formed by a liquid surface and an inner wall of molten glass, and a liquid phase of molten glass, and at least a part of an inner wall surrounding the gas phase space is contained a material of a platinum group metal; and a control portion that makes an area L [m 2 ] of the platinum group metal of the inner wall in contact with the gas phase space and a volume S [m 3 ] of the gas phase space The volatilization of the platinum group metal in the gas phase space is suppressed in such a manner that the ratio S/L is 17 [m] or more. 一種熔融玻璃處理裝置,其特徵在於:其係具有由熔融玻璃之液面與內壁所形成之氣相空間、及熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成者;且包括控制部,其將上述熔融玻璃處理裝置之液面水平控制為預先決定之基準液面水平;且上述控制部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平,使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述鉑族金屬之揮發。 A molten glass processing apparatus characterized by comprising a gas phase space formed by a liquid surface and an inner wall of molten glass, and a liquid phase of molten glass, and at least a part of an inner wall surrounding the gas phase space is contained a material of a platinum group metal material; and a control unit that controls a liquid level of the molten glass processing apparatus to a predetermined reference liquid level; and the control unit is based on a predetermined number of platinum defects and the melting a relationship between the liquid level of the glass processing apparatus, and the reference liquid level is determined as a liquid level of the molten glass processing apparatus corresponding to a permissible value of the number of platinum defects, and the inner wall is in contact with the gas phase space. The ratio S/L of the area L [m 2 ] of the platinum group metal to the volume S [m 3 ] of the gas phase space is 17 [m] or more, and the volatilization of the platinum group metal is suppressed. 一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且具有由熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成; 成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及控制部,其使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述熔融玻璃處理裝置之上述鉑族金屬之揮發。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and has a liquid surface and an inner wall formed of molten glass a vapor phase space and a liquid phase of the molten glass, and at least a portion of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus that forms the molten glass treated by the molten glass processing apparatus into a flat glass; and a control unit that makes the ratio S/L of the area L[m 2 ] of the platinum group metal of the inner wall contacting the gas phase space to the volume S[m 3 ] of the gas phase space is 17 [m] The above method suppresses volatilization of the platinum group metal of the molten glass processing apparatus. 一種玻璃基板製造裝置,其特徵在於包括:熔解裝置,其將玻璃之原料熔解而產生熔融玻璃;熔融玻璃處理裝置,其處理上述熔融玻璃,且包含由熔融玻璃之液面與內壁所形成之氣相空間、及上述熔融玻璃之液相,且包圍上述氣相空間之內壁之至少一部分由含有鉑族金屬之材料構成;成形裝置,其將由上述熔融玻璃處理裝置處理過之熔融玻璃成形為平板玻璃;及控制部,其將上述熔融玻璃處理裝置之液面水平控制為預先決定之基準液面水平;且上述控制部係基於預先求出之鉑缺陷數與上述熔融玻璃處理裝置之液面水平之相關關係,而將上述基準液面水平決定為與鉑缺陷數之容許值對應之上述熔融玻璃處理裝置之液面水平,使與上述氣相空間接觸之上述內壁之上述鉑族金屬之面積L[m2]與上述氣相空間之體積S[m3]之比S/L為17[m]以上之方式,抑制上述鉑族金屬之揮發。 A glass substrate manufacturing apparatus characterized by comprising: a melting device that melts a raw material of glass to produce molten glass; and a molten glass processing device that processes the molten glass and includes a liquid surface and an inner wall formed of molten glass a gas phase space and a liquid phase of the molten glass, and at least a part of an inner wall surrounding the gas phase space is made of a material containing a platinum group metal; and a molding apparatus that forms the molten glass treated by the molten glass processing apparatus into a flat glass; and a control unit that controls a liquid level of the molten glass processing apparatus to a predetermined reference liquid level; and the control unit is based on a predetermined number of platinum defects and a liquid level of the molten glass processing apparatus a horizontal correlation, wherein the reference liquid level is determined as a liquid level of the molten glass processing apparatus corresponding to a permissible value of the platinum defect number, and the platinum group metal of the inner wall in contact with the gas phase space is The ratio of the area L [m 2 ] to the volume S [m 3 ] of the gas phase space S/L is 17 [m] or more, suppressing the platinum Volatile metal.
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