TWI542042B - Led patterned substrate and method for manufacturing the same - Google Patents

Description

Light-emitting diode patterned substrate and manufacturing method thereof

The invention relates to a light-emitting diode patterned substrate and a manufacturing method thereof, in particular to a light-emitting diode patterned substrate prepared by an imprint method and a manufacturing method thereof.

In recent years, due to the booming development of the electronics industry, the demand for various electronic products is increasing, which is the direction in which electronic products enter into multi-functional and high-efficiency development. With the increasing variety of portable electronic products, the demand for electronic products is increasing, and the size and weight of electronic products are becoming smaller. Therefore, the production of metal circuits for substrates in electronic products has become difficult.

It is customary to make a metal circuit on the surface of the heat dissipating substrate. Usually, if the heat dissipating substrate is made of a metal material, for example, an aluminum plate or a copper foil plate, an insulating layer is formed on the surface of the substrate, and then a metal layer is formed on the insulating layer. Then, a photoresist layer is coated on the surface thereof, and the photoresist layer is patterned into a desired wiring pattern, and then the metal layer is etched by an etching solution to form a desired metal line. Although this production method has been in existence for many years, there are also Many related technologies improve the etching process. However, such a metal wiring process is not only cumbersome in steps, but also has a problem of precision error in forming metal lines due to etching in the process of forming metal lines by metal layer etching, and in wet mode. A large amount of etching solution used and discharged in etching also causes environmental pollution. In addition, in the etching process, it is more necessary to consider the destruction of the aluminum substrate by the etching process in the step of etching to form the metal line. Although other techniques such as metal glue and coating printing have been used to fabricate metal lines, the metal lines produced in this manner still have problems of low conductivity and poor line accuracy, which limits their application.

Therefore, if the method of fabricating the substrate can be improved, the preparation of the metal line is simplified, and the step of etching to form the metal line is prevented from causing damage to the aluminum substrate, there is a need to increase the productivity of the related industry and reduce the manufacturing cost thereof.

The main object of the present invention is to provide a method for fabricating a light-emitting diode patterned substrate, which can form a patterned structure on a substrate before forming an insulating layer, and simplify formation on the substrate by using the patterned structure. The process of metal circuit layers, in order to increase the production capacity of related industries and reduce the cost of manufacturing.

In order to achieve the above object, the present invention provides a method for fabricating a light-emitting diode patterned substrate, the steps comprising: (A) providing a substrate, which may be aluminum or an aluminum alloy; and (B) forming a patterned structure. The patterned structure can form the patterned structure on the substrate by a patterning process And the patterned structure may have a groove portion and a protrusion; (C) providing an insulating layer, the insulating layer may be formed on the surface of the patterned structure; (D) providing a metal layer, the metal layer may Formed on the surface of the insulating layer; and (E) removing a portion of the metal layer to form a metal circuit layer, wherein the metal circuit layer can be located in the receiving space of the groove portion, and the metal The circuit layers can be separated by the insulating layer.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, in the step (E), the insulating layer (eg, aluminum oxide) above the protruding portion is compared with the metal layer material located above the groove portion (eg, , copper) has a higher hardness. Therefore, after the step (E), the thickness of the metal layer is reduced to form a metal wiring layer, the surface of the insulating layer may form a coplanar surface, or the surface of the metal wiring layer may protrude through a suitable removal manner. The surface of the insulating layer. Compared with the prior art, the metal layer must be formed through a complicated mask and etching process. In the present invention, the metal layer only needs to be thinned by a simple patterning process. Thin, that is, the metal layer can be formed into a metal line. Therefore, the present invention can effectively improve the complicated process of patterning the metal layer in the current light-emitting diode substrate.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, any patterning treatment can be used as long as the desired patterned structure can be formed on the substrate as appropriate. For example, in one aspect of the invention, the patterning process can be a physical processing method, a chemical etching method, or an electrolytic etching method. In more detail, the physical processing method may be an imprint method, a nano imprint method, a CNC processing method, a roller printing method, a dry etching method, an ion beam etching method, a plasma etching method, a nano engraving method, a reaction. The ion etching method, the laser processing method, or the laser engraving method, but the present invention is not limited thereto. In one embodiment of the invention, the physical etching process can be an imprint embossing process. In still another aspect of the invention, the chemical etching method can be a photomask and a chemical etching method.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, any method of forming an insulating layer can be used as long as it can completely cover the patterned structure. For example, in the foregoing step (C), the insulating layer is formed on the surface of the patterned structure by plasma spraying, flame spraying, surface polymerization, sol-gel method, evaporation method, and radio frequency. Sputtering, bias sputtering, chemical vapor deposition, anodization, or micro-arc oxidation, but the invention is not limited thereto. In one embodiment of the invention, the insulating layer is formed on the surface of the patterned structure by a micro-arc oxidation method. Further, when the desired insulating layer is formed by the micro-arc oxidation method, the required electrolyte composition is not particularly limited. Preferably, the electrolyte of the micro-arc oxidation method may comprise bismuth citrate and sodium hexametaphosphate. Further, the present invention does not particularly limit various operational parameters of the micro-arc oxidation method as long as the insulating layer can be formed. For example, the micro-arc oxidation method may have a current density of 1 to 10 A/dm ² , a voltage of 200 V to 800 V, and an oxidation time of 5 to 60 minutes.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, after the micro-arc oxidation method, the insulating layer may be further subjected to a hole treatment. In the present invention, various methods of sealing treatment can be used as long as the insulation between the metal wiring layer and the substrate can be improved. For example, in one aspect of the present invention, the sealing treatment may be impregnation sealing, vacuum containing Dipping hole, steam sealing, ceramic spray sealing, nickel sulfate sealing, nickel acetate sealing, organic acid sealing, normal temperature nickel fluoride cold sealing, or sol-gel sealing, but the invention Not limited to this.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, before the step (C), a pre-processing step (B') is further included, which can be performed by sandpaper polishing, cleaning liquid, and alkali. The etching solution and the light-emitting liquid are surface-treated so that the insulating layer can be more easily formed on the patterned structure.

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, a metal layer can be formed on the insulating layer, and the formed metal layer can be filled over the recessed portion and the protruding portion of the patterned structure. Various methods of forming a metal layer can be used on the upper insulating layer. For example, in one aspect of the invention, the metal layer is formed on the surface of the insulating layer by a coating method, an electroless plating method, a sputtering method, an evaporation method, a cathodic arc method, or a chemical gas. Phase deposition method, but the invention is not limited thereto. In one aspect of the invention, the metal layer can be formed on the surface of the insulating layer by electroless plating; in another aspect of the invention, the metal layer can be formed on the surface of the insulating layer by sputtering. Or a person skilled in the art can form a metal layer by coating a surface of the insulating layer with a conductive paste (such as conductive silver paste).

In the above method for fabricating a light-emitting diode patterned substrate of the present invention, in the step (E), as long as the metal layer of the portion can be removed to form a metal wiring layer, various removal methods can be used. For example, in one aspect of the invention, the manner in which portions of the metal layer are removed may be Wet etching, dry etching, ion beam etching, plasma etching, reactive ion etching, nano-engraving, laser engraving, polishing, or chemical mechanical polishing to remove portions of the metal layer to form the metal wiring layer, but The invention is not limited to this. In one aspect of the invention, a portion of the metal layer can be removed by wet etching to form a desired metal wiring layer; in another aspect of the invention, chemical mechanical polishing can be used. A portion of the metal layer is removed to form the desired metal wiring layer.

Accordingly, the preparation of the metal wiring can be simplified by the above-described method of fabricating the light-emitting diode patterned substrate of the present invention. Furthermore, since the mask forming method of the conventional metal wiring layer is not required, the manufacturing process can be simplified and the manufacturing cost can be reduced, and the etching liquid usage and the amount of the etching liquid during wet etching can be reduced.

In addition, in the method for fabricating a light-emitting diode patterned substrate of the present invention, the method further includes: disposing a semiconductor epitaxial layer on the surface of the light-emitting diode patterned substrate and electrically connecting the metal wiring layer, thereby obtaining a Light-emitting diode.

Another object of the present invention is to provide a light-emitting diode patterned substrate, which can form a patterned structure on a substrate before forming an insulating layer, and simplify the formation of a metal line on the substrate by using the patterned structure. The process of the layer to meet the demand for increasing the production capacity of related industries and reducing manufacturing costs.

In order to achieve the above object, the present invention provides a light-emitting diode patterned substrate, which is prepared according to the above-described method for fabricating a light-emitting diode patterned substrate, comprising: a substrate, which may be aluminum or aluminum alloy ; a patterned structure, the patterned structure can be formed on the substrate by a patterning process, and the patterned structure can have a groove portion and a protrusion; an insulation layer, the insulation layer Forming on the surface of the patterned structure; and a metal circuit layer, the metal circuit layer may be located on the surface of the groove portion, and the surface of the protrusion is exposed to air.

In the above-described light-emitting diode patterned substrate of the present invention, various insulating layers can be used as long as the metal wiring layer and the substrate can be insulated. For example, in one aspect of the invention, the insulating layer can be aluminum oxide, aluminum oxide, or aluminum nitride. In another aspect of the invention, the insulating layer can be alumina.

In the above-described light-emitting diode patterned substrate of the present invention, the material of the metal wiring layer is not particularly limited as long as it can have the characteristics required for the substrate wiring, and the present invention is not limited thereto. For example, in one aspect of the invention, the metal wiring layer can be gold, aluminum, silver, copper, nickel, palladium, tin, or alloys thereof. In one embodiment of the invention, the metal circuit layer can be composed of copper.

The light-emitting diode patterned substrate of the present invention further includes a semiconductor epitaxial layer disposed on the surface of the light-emitting diode patterned substrate and electrically connected to the metal wiring layer, thereby obtaining a light-emitting diode Polar body. For example, in one aspect of the present invention, the semiconductor epitaxial layer can be electrically connected to the metal wiring layer through a flip chip to obtain a flip chip light emitting diode; In the sample, the semiconductor epitaxial layer is electrically connected to the metal circuit layer by wire bonding, thereby obtaining a one-side light emitting diode; in another aspect of the present invention, the semiconductor beam One side of the crystal layer may be electrically connected to the metal circuit layer in a soldering manner, and the other side is electrically connected to the metal circuit layer by wire bonding, thereby obtaining a general-purpose light emitting diode, but the present invention is not limited thereto. .

In addition, the above-mentioned light-emitting diode patterned substrate of the present invention may further comprise a bonding layer, and the bonding layer may be at least one selected from the group consisting of a solder layer, a metal layer, and a heat conductive resin layer. In the light-emitting diode patterned substrate of the present invention, a solder layer may be interposed between the semiconductor epitaxial layer and the light-emitting diode patterned substrate, so that the semiconductor epitaxial layer can be fixed to the light-emitting diode. The surface of the substrate is patterned, wherein the material of the solder layer is not particularly limited. For example, in one aspect of the invention, the solder layer may be tin, silver, or tin-silver alloy, or the like. The semiconductor epitaxial layer is fixed on the metal circuit layer on the surface of the light-emitting diode patterned substrate, and at the same time, the effect of electrical connection is achieved. In the light-emitting diode patterned substrate of the present invention, a metal layer may be interposed between the semiconductor epitaxial layer and the solder layer to enhance the bonding strength between the semiconductor epitaxial layer and the solder, wherein the metal layer It can be titanium, chromium, zirconium, molybdenum, tungsten, or alloys thereof. In the light-emitting diode patterned substrate of the present invention, a thermally conductive resin layer may be interposed between the semiconductor epitaxial layer and the light-emitting diode patterned substrate, so that the semiconductor epitaxial layer can be fixed to the light-emitting diode. The surface of the substrate is patterned, wherein the thermally conductive resin layer is a general thermal grease or a diamond thermal paste for fixing the semiconductor epitaxial layer to the surface of the LED substrate. In one aspect of the invention, the semiconductor epitaxial layer and the light-emitting diode patterned substrate can be bonded through a single layer structure of a solder layer or a thermally conductive resin layer. In another aspect of the invention, the semiconductor The epitaxial layer and the light-emitting diode patterned substrate can be bonded through a two-layer structure of a solder layer and a metal layer, and the present invention is not limited thereto.

1,2‧‧‧Light-emitting diode patterned substrate

10,20‧‧‧substrate

11,21‧‧‧patterned structure

111,211‧‧‧ Groove

112,212‧‧‧Protruding

12,22‧‧‧Insulation

13,23‧‧‧metal layer

13’, 23’‧‧‧ metal circuit layer

34‧‧‧Flip-chip semiconductor epitaxial layer

34'‧‧‧ Straight-through semiconductor epitaxial layer

34"‧‧‧Side-type semiconductor epitaxial layer

35,35’‧‧‧ solder layer

35"‧‧‧ Thermally conductive resin layer

36,36’‧‧‧metal layer

37‧‧‧Wire

100‧‧‧Flip-chip light-emitting diode

200‧‧‧through-through light-emitting diode

300‧‧‧Side-type light-emitting diode

1A to 1E are schematic diagrams showing a preparation process of a light-emitting diode patterned substrate according to Embodiment 1 of the present invention.

2A and 2B are a schematic structural view and a perspective view of a light-emitting diode patterned substrate according to Embodiment 2 of the present invention.

3A to 3C are schematic views showing the structure of a light-emitting diode according to Embodiment 3 of the present invention.

The invention aims to simplify the process of the entire light-emitting diode substrate by pre-forming a patterned structure on the substrate, eliminating the need for a high-precision exposure development etching process to prepare a metal wiring layer required for the light-emitting diode substrate. . At the same time, since the manufacturing process of the printed circuit board is not required, the method for manufacturing the LED patterned substrate of the present invention does not generate a large amount of etching waste liquid in the conventional mask etching process, which is more conducive to saving related waste liquid. Environmental and cost issues in handling. Hereinafter, the present invention will be described in detail through more specific description.

Example 1

Please refer to FIG. 1A to FIG. 1E, which are the light-emitting two of the first embodiment. Schematic diagram of the preparation process of the polar body patterned substrate. First, referring to FIG. 1A, a substrate 10 is provided, which is an aluminum substrate. Next, referring to FIG. 1B, a patterned structure 11 is formed on the substrate 10 by imprinting, wherein the patterned structure 11 has a groove portion 111 and a protruding portion 112. Referring to FIG. 1C, the surface of the patterned structure 11 is formed into an insulating layer 12 by a micro-arc oxidation method, wherein the insulating layer is alumina. In the first embodiment, the electrolyte used in the micro-arc oxidation method comprises bismuth citrate and sodium hexametaphosphate, and the current density of the micro-arc oxidation method is 1 to 10 A/dm 2 , and the voltage system is 200 V to 800 V. The oxidation time is 5 to 60 minutes. Then, after the micro-arc oxidation method, the insulating layer 12 can be subjected to a hole treatment (not shown) to enhance the insulation of the insulating layer 12. In the present invention, as long as the insulation of the insulating layer 12 can be improved, those skilled in the art can select various sealing treatment methods, such as impregnation sealing, vacuum impregnation sealing, water vapor sealing, ceramic spray welding sealing, etc. Nickel sulfate sealing, nickel acetate sealing, organic acid sealing, normal temperature nickel fluoride cold sealing, or sol-gel sealing, wherein, in this embodiment, the insulating layer 12 is sealed by nickel acetate . Referring to FIG. 1D, a metal layer 13 is formed on the surface of the insulating layer 12 by sputtering, wherein the metal layer 13 is made of copper. Finally, referring to FIG. 1E, the metal layer 13 is thinned by dry etching to remove a portion of the metal layer 13 and form a metal wiring layer 13', wherein the metal wiring layer 13' is located. The recessed portion 111 accommodates a space, and the metal wiring layer 13' is separated by the insulating layer 12. In addition, in the foregoing embodiment, the metal circuit layer 13' is composed of copper, but the invention is not limited thereto.

Accordingly, as shown in FIGS. 1A to 1E, according to the above-described method for fabricating a light-emitting diode patterned substrate of the present invention, a light-emitting diode patterned substrate 1 can be obtained, comprising: a substrate 10, the substrate 10 Is an aluminum substrate; a patterned structure 11, the patterned structure 11 is formed on the substrate 10 by nano imprinting, and the patterned structure 11 has a groove portion 111 and a protrusion 112; An insulating layer 12 is formed on the surface of the patterned structure 11; and a metal circuit layer 13', wherein the metal circuit layer 13' is located in the receiving space of the groove portion 111, and the metal The wiring layer 13' is separated by the insulating layer 12.

Example 2

The second embodiment is substantially the same as the first embodiment except that the second embodiment removes a portion of the metal layer by chemical mechanical polishing, and the surface of the formed metal wiring layer forms a coplanar surface with the surface of the insulating layer.

2A is a schematic structural view of a light-emitting diode patterned substrate 2 of Embodiment 2, comprising: a substrate 20, which is an aluminum substrate; and a patterned structure 21, which is borrowed by the patterned structure 21 The patterned structure 21 has a recessed portion 211 and a protruding portion 212, and an insulating layer 22 formed on the patterned structure 21 by a nanoimprint method. a surface; and a metal circuit layer 23', wherein the metal circuit layer 23' is located on the surface of the groove portion 211, and the surface of the metal circuit layer 23' forms a coplanar with the surface of the insulating layer 22, and the metal line Layer 23' is separated by the insulating layer 22. Please refer to FIG. 2B together, which is a stereoscopic diagram of the LED array substrate 2 of Embodiment 2. Figure. Accordingly, according to the method for fabricating a light-emitting diode patterned substrate of the present invention, the light-emitting diode patterned substrate 2 as shown in FIG. 2B can be prepared.

Example 3

Please refer to FIG. 3A , which is a schematic structural diagram of the flip-chip LED 100 of Embodiment 3. As shown in FIG. 3A, a flip-chip semiconductor epitaxial layer 34 is disposed on the LED array substrate 2 of Embodiment 2 and electrically connected to the metal wiring layer 23' by a solder layer 35. A flip-chip light-emitting diode is formed, wherein the solder layer 35 can be a conventional solder, for example, tin, silver, or tin-silver alloy. In addition, in order to enable the flip-chip semiconductor epitaxial layer 34 to be easily soldered to the metal wiring layer 23', a person skilled in the art can selectively provide a layer between the semiconductor epitaxial layer 34 and the solder layer 35. A metal layer 36 is provided to facilitate soldering the flip-chip semiconductor epitaxial layer 34 to the metal wiring layer 23'. The metal layer 36 can be any material known in the art, for example, the metal layer can be titanium, chromium, zirconium, molybdenum, tungsten, or alloys thereof. In this embodiment, the solder layer 35 is a tin-silver alloy; the metal layer 36 is a titanium metal. According to this, the flip-chip light-emitting diode 100 of the third embodiment can be completed.

Example 4

Please refer to FIG. 3B , which is a schematic structural diagram of the straight-through light emitting diode 200 of Embodiment 4. As shown in FIG. 3B, the conventional semiconductor epitaxial layer 34' is electrically connected to the metal wiring layer 23' by a solder layer 35' and a wire 37, respectively, thereby forming a general-purpose light-emitting diode. The solder layer 35' may be a conventional solder such as tin, silver, or tin-silver alloy. In addition, in order to facilitate the soldering of the straight-through semiconductor epitaxial layer 34' to the metal wiring layer 23', those skilled in the art can selectively select the straight-through semiconductor epitaxial layer 34' and the solder layer 35'. A metal layer 36' is disposed therebetween to facilitate soldering the straight-through semiconductor epitaxial layer 34' to the metal wiring layer 23'. The metal layer 36' can be a metal or alloy as is known in the art, for example, the metal layer can be titanium, chromium, zirconium, molybdenum, tungsten, or alloys thereof. In this embodiment, the solder layer 35' is a tin-silver alloy; the metal layer 36' is a titanium-molybdenum alloy. According to this, the straight-through light-emitting diode 200 of the fourth embodiment can be completed.

Example 5

Please refer to FIG. 3C , which is a schematic structural view of the side-emitting LED 300 of Embodiment 5. As shown in FIG. 3C, a one-side semiconductor epitaxial layer 34" is disposed on the surface of the light-emitting diode patterned substrate 2 by a thermally conductive resin layer 35", and the side-by-side semiconductor is epitaxial by a wire 37. The positive/negative electrode of the layer 34" is electrically connected to the positive/negative circuit of the metal wiring layer 23' to form a one-side light emitting diode, wherein the thermally conductive resin layer 35" can be a conventionally known insulating layer. A material is provided to facilitate the fixing of the semiconductor epitaxial layer 34" on the LED pattern substrate 2. In this embodiment, the thermally conductive resin layer 35" is a diamond thermal paste. Accordingly, the side-by-side light-emitting diode 300 of Example 4 can be completed.

The above embodiments are merely examples for the convenience of the description, and the scope of the claims should be based on the scope of the patent application, and It is not limited to the above embodiment.

2‧‧‧Lighting diode patterned substrate

20‧‧‧Substrate

21‧‧‧ patterned structure

211‧‧‧ Groove

212‧‧‧Protruding

22‧‧‧Insulation

23’‧‧‧Metal circuit layer

Claims (16)

A method for fabricating a light-emitting diode patterned substrate, the method comprising: (A) providing a substrate, the substrate being aluminum or an aluminum alloy; and (B) forming a patterned structure, wherein the patterned structure is formed by a pattern Forming the patterned structure on the substrate, and the patterned structure has a groove portion and a protrusion portion, wherein the patterning process is an imprint method or a nano imprint method; Providing an insulating layer formed on the surface of the patterned structure, wherein the insulating layer is formed on the surface of the patterned structure by a micro-arc oxidation method; (D) providing a metal layer, the metal a layer is formed on the surface of the insulating layer; and (E) removing a portion of the metal layer to form a metal wiring layer, wherein the metal wiring layer is located in the receiving space of the groove portion, and The metal wiring layer is separated by the insulating layer. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein the patterning process is an imprint method. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein after the step (E), the surface of the metal circuit layer forms a coplanar with the surface of the insulating layer, or the surface of the metal circuit layer It protrudes from the surface of the insulating layer. The method for producing a light-emitting diode patterned substrate according to claim 1, wherein the electrolyte solution of the micro-arc oxidation method comprises bismuth citrate and sodium hexametaphosphate. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein the micro-arc oxidation method has a current density of 1 to 10 A/dm ² and a voltage system of 200 V to 800 V, and the oxidation time is It is 5 to 60 minutes. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein after the micro-arc oxidation method, the insulating layer is further subjected to a hole treatment. The method for fabricating a light-emitting diode patterned substrate according to claim 6, wherein the sealing treatment is impregnation sealing, vacuum impregnation sealing, water vapor sealing, ceramic spray welding sealing, sulfuric acid Nickel sealing, nickel acetate sealing, organic acid sealing, normal temperature nickel fluoride cold sealing, or sol-gel sealing. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein before the step (C), a pre-processing step (B') is further performed, wherein the substrate is polished by sandpaper. , cleaning solution, alkali etching solution and light-emitting solution for surface treatment. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein in the step (D), the metal layer is formed on the surface of the insulating layer by a coating method or an electroless plating method. Method, sputtering method, vapor deposition method, cathodic arc method, or chemical vapor deposition method. The method for fabricating a light-emitting diode patterned substrate according to claim 1, wherein in step (E), the portion of the metal layer is moved The method is formed by wet etching, dry etching, ion beam etching, plasma etching, reactive ion etching, nano-engraving, laser engraving, polishing, or chemical mechanical polishing to remove a portion of the metal layer. Metal circuit layer. The method for fabricating a light-emitting diode patterned substrate according to claim 1, further comprising disposing a semiconductor epitaxial layer on the surface of the light-emitting diode patterned substrate and electrically connecting the metal wiring layer. The invention relates to a method for fabricating a light-emitting diode patterned substrate according to any one of claims 1 to 11, which comprises: a substrate, the substrate is An aluminum or aluminum alloy; a patterned structure, the patterned structure is formed on the substrate by an etching process, and the patterned structure has a groove portion and a protruding portion; an insulating layer The insulating layer is formed on the surface of the patterned structure; and a metal circuit layer is located on the surface of the groove portion, and the surface of the protruding portion is exposed to air. The light-emitting diode patterned substrate according to claim 12, wherein the insulating layer is aluminum oxide, aluminum oxide, or aluminum nitride. The light-emitting diode patterned substrate according to claim 12, wherein the metal wiring layer is gold, aluminum, silver, copper, nickel, palladium, tin or an alloy thereof. The illuminating diode patterned substrate of claim 12, further comprising a semiconductor epitaxial layer disposed on the surface of the illuminating diode patterned substrate and electrically connected to the metal wiring layer. The illuminating diode patterned substrate of claim 15, further comprising a bonding layer sandwiched between the semiconductor epitaxial layer and the substrate Between the plates, the bonding layer is at least one selected from the group consisting of a solder layer, a metal layer, and a thermally conductive resin layer.