TWI540219B - The Manufacturing Method and Structure of Corrosion Resistant Film Resistors - Google Patents

Description

Method for manufacturing corrosion resistant thin film resistor and structure thereof

The present invention provides a method for manufacturing an anti-corrosion film resistor and a structure thereof, and more particularly to a method for manufacturing an anti-corrosion film resistor which can avoid the influence of high-temperature electrical properties caused by high-temperature resistance of a film resistor and has a long-term anti-corrosion effect. And its structure.

According to the film resistance, the application of the film resistance is quite extensive. For any area much larger than the thickness, such as the thin film physics or the semiconductor industry, a film having a nanometer thickness is often deposited on the wafer. The conventional thin film resistor is manufactured by using a sputtering alloy material (Sputtering Resistive Materials), such as a resistive alloy target (metal) of a metal compound such as nickel, chromium, ruthenium, aluminum, manganese or copper. The resistive layer of the body may cause an electric corrosion effect (Electrolytic Corrosion) due to a long period of time in a high temperature, high humidity, and load voltage environment, resulting in a large variation in resistance value or an open circuit.

In addition, in order to overcome the galvanic effect of the resistor, the conventional technical means is to apply an epoxy (Epoxy) or polymer (Polymer) insulating material on the surface of the resistive layer for use as a corrosion resistant material, but for a long time. After use, there will still be an electrolytic corrosion effect, which will still cause electrical characteristics such as resistance value and temperature coefficient to change or form an open circuit.

From this, it can be seen that the manufacturing means of the above-mentioned thin film resistors are still in need of improvement in the following problems and defects:

1. A resistive layer made of a sputter-resistive metal material does not have a corrosion-resistant protective layer and is highly susceptible to electrolytic corrosion.

Second, the surface of the resistive layer is coated with an insulating material as a protective layer against corrosion. Under long-term use, there is still a risk of open circuit.

Therefore, how to solve the above problems and deficiencies in the above-mentioned applications, that is, the inventors of the present invention and those involved in the industry are eager to study the direction of improvement.

Therefore, in view of the above-mentioned deficiencies, the inventors of the present invention have collected relevant materials, and through multi-party evaluation and consideration, and through years of experience accumulated in the industry, through continuous trial and modification, the long-acting avoidance film has been designed. A method of manufacturing a corrosion-resistant thin film resistor whose electrical resistance is caused by an electric corrosion effect, and a structure of the invention.

The main object of the present invention is to select one of bismuth (Si) or tantalum (Ta) as a coating target, and to mix reactive oxygen or nitrogen in a discharge gas in a reactive sputtering process. A film having a thickness of 1 micrometer (μm) or more is plated on the film resistor, and the operating temperature of the reactive sputtering can be controlled between 100 ° C and 200 ° C, thereby forming a layer by passivating the coating target (Passivate). A protective layer with corrosion resistance.

In order to achieve the above object, the main structure of the present invention comprises: a thin film resistor and a protective layer disposed on the resistor of the thin film, and the protective layer comprises at least one coating target of bismuth (Si) or tantalum (Ta); When the user performs the coating of the thin film resistive protective layer by means of reactive sputtering, it is one of the coating targets by using one of cerium (Si) or tantalum (Ta), and mixing oxygen or nitrogen to the discharge gas. In the case where the sputtering temperature is controlled between 100 ° C and 200 ° C, the above-mentioned coating target is passivated to form a protective layer having corrosion resistance, and the thickness of the protective layer is 1 micrometer (μm). ~2 micrometers (μm), thereby avoiding the electrical resistance of the thin film resistor due to the electric corrosion effect, and the protective layer is made of cerium (Si) oxide, germanium (Si) nitride or tantalum (Ta) The composition of the oxide is more effective than the protective layer made of an insulating material such as epoxy resin (Epoxy), and the resistance is reduced to cause the above-mentioned abnormal problem.

With the above technology, the corrosion-resistant protective layer existing in the manufacturing method of the conventional thin film resistor can not be used for a long time, or even without a protective layer, and the problem that the electric resistance is easily changed due to the electric corrosion effect is broken. Practical advancement of the above advantages.

1‧‧‧thin film resistor

11‧‧‧Alumina substrate

12‧‧‧First electrode section

13‧‧‧Second electrode section

14‧‧‧resistance layer

2‧‧‧Protective layer

A‧‧‧thickness

The first figure is a perspective view of a thin film resistor of a preferred embodiment of the present invention.

The second drawing is a cross-sectional view of the line A-A of the first drawing of the present invention.

The third drawing is a partial enlarged view of a preferred embodiment of the present invention.

The fourth figure is a block flow diagram of a preferred embodiment of the present invention.

The fifth picture is a test report of the film electrical impedance corrosion test.

In order to achieve the above objects and effects, the technical means and the structure of the present invention will be described in detail with reference to the preferred embodiments of the present invention.

Please refer to the first and second figures, which are perspective views of a thin film resistor according to a preferred embodiment of the present invention and a cross-sectional view of a line AA of the first drawing. It can be clearly seen from the drawing that the manufacturing method of the present invention and its main components are The steps are: (a) using one of bismuth (Si) or tantalum (Ta) as a coating target; (b) mixing reactive oxygen or nitrogen gas in a reactive sputtering process. In the discharge gas; (c), the operating temperature of the reactive sputtering can be controlled between 100 ° C and 200 ° C; and (d), the coating target is passivated (Passivate) to form a protective layer 2 with corrosion resistance The thickness of the protective layer on the thin film resistor 1 is from 1 micrometer (μm) to 2 micrometers (μm).

Please refer to the first to fourth figures at the same time, which is a perspective view of a thin film resistor according to a preferred embodiment of the present invention, a cross-sectional view of a first AA line segment, a partial enlarged view and a block flow chart, which can be clearly seen from the figure. When it is produced by the above steps, the film is coated on the film resistor 1 by a reactive sputtering method, which is a vacuum sputtering method in which a compound film is sputtered. When the compound is directly used as a target, the composition of the sputtered film may be greatly different from the composition of the target. Therefore, when the compound film is sputtered, the reaction gas is usually mixed in the discharge gas to control the film of the compound. Composition and properties, this method of sputtering is called reactive sputtering. The control factors in operation include time, temperature, material ratio, etc., wherein the use of temperature and materials is particularly important. Generally, the working environment of sputtering is between 200 ° C and 800 ° C. If the effect of nanometer is desired, Usually at 500 ° C or higher, however, the film resistance 1 produced at this high temperature, the most important resistance value often has an error value of 5 to 10%, and other derived electrical characteristics are even more problematic. Therefore, the present invention Reactive Sputtering used in the manufacturing method, using one of bismuth (Si) or tantalum (Ta) as a coating target, and introducing reactive oxygen or nitrogen gas during the reactive sputtering process, monitoring The gas flow rate makes the film formation rate of the compound the same as the metal film formation rate, and controls the flow rate set value required for the reactive gas, thereby improving the stability of the film deposition process, and With the temperature setting of 100 ° C ~ 200 ° C, the thickness A of the sputtering is accumulated to 1 micrometer (μm) ~ 2 micrometers (μm) (as an example), the above coated target is passivated on the resistive layer 14 (Passivate) a film composed of an oxide of cerium (Si), a nitride of cerium (Si) or an oxide of cerium (Ta). The thickness A of the film is more than 1 micrometer (μm) and is corrosion-resistant. The protective layer 2, thereby preventing the film resistance 1 from being changed due to the electric corrosion effect, and the protective layer 2 is protected from the protective layer 2 made of an insulating material such as epoxy resin (Epoxy). It can be used for a long time and has its practical progress.

Please also refer to the test report of the thin film electrical impedance corrosion test as shown in the fifth figure. The test method is as follows: the thin film resistor with the sputter protective layer and the unprotected layer is respectively taken on the two thin film resistance samples. Water droplets were applied, and then a voltage of 20 V was applied from the electrode portions at both ends, and then the corrosion of the resistive film was observed. The fifth picture shows the appearance of the front and back sides of the two types of film resistance tests. It can be clearly seen from the figure that the film resistance of the unprotected film resistance is corroded after the test, which proves the invention. The protective layer has a substantial effect.

However, the above description is only for the preferred embodiment of the present invention, and thus the scope of the present invention is not limited thereto, so that the simple modification and equivalent structural changes that are made by using the specification and the contents of the present invention should be the same. It is included in the scope of the patent of the present invention and is combined with Chen Ming.

Therefore, the manufacturing method of the anti-corrosion thin film resistor of the present invention and the structure thereof are as follows:

1. A protective layer 2 having corrosion resistance is sputtered on the surface of the resistive layer 14 to avoid the electric resistance effect caused by the electric corrosion effect.

2. The protective layer 2 formed of a coating target comprising cerium (Si) or cerium (Ta) can maintain its function under long-term use.

Third, the operating temperature is not easy to affect the electrical characteristics, and the thickness A of the film is more durable.

In summary, the manufacturing method and structure of the anti-corrosion film resistor of the present invention can achieve its efficacy and purpose when used, so the invention is an invention with excellent practicability, and is an application for conforming to the invention patent. The application is made in accordance with the law, and the audit committee is expected to grant the invention as soon as possible to protect the inventor's hard work. If the audit committee has any doubts, please do not hesitate to give instructions, the inventor will try his best to cooperate and feel polite.

1‧‧‧thin film resistor

11‧‧‧Alumina substrate

12‧‧‧First electrode section

13‧‧‧Second electrode section

14‧‧‧resistance layer

2‧‧‧Protective layer

Claims (6)

A method for manufacturing an anti-corrosion thin film resistor, the steps of which are: (a) using one of bismuth (Si) or tantalum (Ta) as a coating target; (b) in a reactive sputtering process (Reactive Sputtering) , mixing reactive oxygen or nitrogen gas into the discharge gas; (c) controlling the operating temperature of the reactive sputtering between 100 ° C and 200 ° C; and (d), passivating the coating target (Passivate) A protective layer having an anticorrosive effect is formed on the film resistor, and the thickness of the protective layer is from 1 micrometer (μm) to 2 micrometers (μm). The method for manufacturing an anti-corrosion sheet resistor according to claim 1, wherein the sheet resistance comprises an alumina substrate, a first electrode portion defined at one side of the alumina substrate, and a film defined by the oxidation The aluminum substrate faces away from the second electrode portion on the side of the first electrode portion and a resistive layer provided on the alumina substrate. The method for producing a corrosion-resistant sheet resistor according to claim 1, wherein the protective layer is formed by passivation of an oxide of cerium (Si), a nitride of cerium (Si) or an oxide of cerium (Ta). film. The structure of an anti-corrosion thin film resistor comprises: a thin film resistor; and a protective layer disposed on the thin film resistor by a reactive sputtering method with an operating temperature between 100 ° C and 200 ° C to avoid resistance The electrical characteristics are changed by the electrolytic corrosion effect, and the protective layer is formed by the passivation of ytterbium (Si) oxide, ytterbium (Si) nitride or tantalum (Ta) oxide to a thickness of 1 micrometer (μm)~ A 2 micron (μm) film comprising at least one bismuth (Si) or tantalum (Ta) coating target. The structure of the anti-corrosion thin film resistor according to claim 4, wherein the thin film resistor comprises an alumina substrate, a first electrode portion defined at one side of the alumina substrate, and one defined by the alumina a second electrode portion at a side of the substrate facing away from the first electrode portion and a resistive layer disposed on the alumina substrate. The structure of the anti-corrosion thin film resistor according to claim 5, wherein the protective layer is formed on the upper side of the resistance layer.