TWI536122B - 微影投影曝光設備之照明系統 - Google Patents

微影投影曝光設備之照明系統 Download PDF

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Publication number
TWI536122B
TWI536122B TW102135976A TW102135976A TWI536122B TW I536122 B TWI536122 B TW I536122B TW 102135976 A TW102135976 A TW 102135976A TW 102135976 A TW102135976 A TW 102135976A TW I536122 B TWI536122 B TW I536122B
Authority
TW
Taiwan
Prior art keywords
light
array
irradiance distribution
pupil plane
irradiation
Prior art date
Application number
TW102135976A
Other languages
English (en)
Chinese (zh)
Other versions
TW201423282A (zh
Inventor
麥可 派崔
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡爾蔡司Ｓｍｔ有限公司 filed Critical 卡爾蔡司Ｓｍｔ有限公司
Publication of TW201423282A publication Critical patent/TW201423282A/zh
Application granted granted Critical
Publication of TWI536122B publication Critical patent/TWI536122B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
TW102135976A 2012-10-08 2013-10-04 微影投影曝光設備之照明系統 TWI536122B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/004212 WO2014056513A1 (en) 2012-10-08 2012-10-08 Illumination system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
TW201423282A TW201423282A (zh) 2014-06-16
TWI536122B true TWI536122B (zh) 2016-06-01

Family

ID=47178539

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102135976A TWI536122B (zh) 2012-10-08 2013-10-04 微影投影曝光設備之照明系統

Country Status (5)

Country Link
US (1) US9261695B2 (https=)
JP (1) JP5864771B2 (https=)
KR (1) KR101591155B1 (https=)
TW (1) TWI536122B (https=)
WO (1) WO2014056513A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106502055B (zh) * 2015-09-06 2019-04-19 中芯国际集成电路制造(上海)有限公司 光刻失焦的检测方法
CN116414010B (zh) * 2023-04-06 2024-04-26 上海镭望光学科技有限公司 一种自由光瞳产生装置及其产生自由光瞳照明的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737662B2 (en) * 2001-06-01 2004-05-18 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
KR100480620B1 (ko) 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
JP4717813B2 (ja) * 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
US20060087634A1 (en) 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
US8937706B2 (en) * 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
KR20180072841A (ko) 2007-11-06 2018-06-29 가부시키가이샤 니콘 조명 광학계, 노광 장치 및 노광 방법
DE102008054582A1 (de) 2007-12-21 2009-07-09 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
EP2282188B1 (en) * 2008-05-28 2015-03-11 Nikon Corporation Illumination optical system and exposure apparatus
EP2202580B1 (en) * 2008-12-23 2011-06-22 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
NL2004429A (en) * 2009-08-25 2011-02-28 Asml Netherlands Bv Illumination system, lithographic apparatus and method of adjusting an illumination mode.
US8335999B2 (en) * 2010-06-11 2012-12-18 Orbotech Ltd. System and method for optical shearing
DE102010030089A1 (de) * 2010-06-15 2011-12-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
JP2012099686A (ja) * 2010-11-04 2012-05-24 Nikon Corp 光源形成方法、露光方法、及びデバイス製造方法
JP6016169B2 (ja) * 2011-01-29 2016-10-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
CN107390477B (zh) * 2011-10-24 2020-02-14 株式会社尼康 照明系统、曝光装置及制造、图像形成、照明与曝光方法

Also Published As

Publication number Publication date
WO2014056513A1 (en) 2014-04-17
JP5864771B2 (ja) 2016-02-17
KR20140080457A (ko) 2014-06-30
TW201423282A (zh) 2014-06-16
KR101591155B1 (ko) 2016-02-02
US9261695B2 (en) 2016-02-16
US20150070671A1 (en) 2015-03-12
JP2015501552A (ja) 2015-01-15

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