TWI535068B - A substrate for an optical semiconductor device, a method for manufacturing the same, and an optical semiconductor device - Google Patents

Description

Substrate for optical semiconductor device, method of manufacturing the same, and optical semiconductor device

The present invention relates to a substrate for an optical semiconductor device, a method of manufacturing the same, and an optical semiconductor device using the substrate.

Optical elements such as LEDs and photodiodes are widely used in the industry because of their high efficiency and high resistance to external stress and environmental influences. Further, the optical element has a long life and a compact size, and can be configured to have a large number of different configurations and can be manufactured at a low manufacturing cost (for example, refer to Patent Document 1).

For example, in general, an epoxy substrate having a fiber reinforced material typified by FR-4 is known from the viewpoint of the material of the substrate on which the semiconductor element is mounted.

In particular, in an optical semiconductor device that generates a large amount of heat and high output, it is important to use a substrate having a high reflectance for a long period of time while maintaining high heat dissipation.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 2011-521481

The present invention has been made to solve the above problems, and an object of the present invention is to provide a substrate for an optical semiconductor device having high mechanical stability and high optical durability and high heat dissipation, and a method for manufacturing the same, and a method for manufacturing the same. An optical semiconductor device of the substrate.

In order to achieve the above object, according to the present invention, there is provided a substrate for an optical semiconductor device having at least two electrical connection portions electrically connected to an optical semiconductor element, characterized in that the polyfluorene resin composition is impregnated into the fiber. The surface of the resin layer on which the hardened material is hardened has a metal layer, and the resin layer is formed on the resin layer side of the base to form an element for mounting the optical semiconductor element in the thickness direction. The recessed portion is formed with a plating layer on the inner surface of the element mounting recess.

As described above, the substrate for an optical semiconductor device having high mechanical stability and high durability and high heat dissipation properties is obtained.

In this case, the electrical connection portion is preferably formed on the inner surface of the recess portion for the electrical connection portion by plating, and is electrically connected to the metal layer. The electrical connection portion recessed portion is formed on the resin layer side of the base and penetrates the resin layer at least in the thickness direction.

As long as it is as described above, it is excellent in heat dissipation. Further, it can be connected to another substrate by a metal layer.

Moreover, in this case, it is preferable that the said fiber reinforcement material is glass fiber.

When the fiber reinforced material is a glass fiber, the substrate exhibits excellent ultraviolet resistance and heat resistance, and a good adhesion between the fiber reinforced material and the polyoxymethylene resin composition can be ensured. Further, since the glass fiber is a material which is inexpensive and easy to handle, it is also advantageous from the viewpoint of cost.

Moreover, in this case, it is preferable that the resin layer of the base is used by impregnating the prepreg of the fiber reinforced material with at least one layer or more and hardening the polyoxyn resin resin composition.

As long as it is as described above, it has a desired thickness and is more excellent in mechanical stability.

Moreover, in this case, the polyoxyphthalocene resin composition may be a condensation hardening type or an addition hardening type polyoxymethylene resin composition.

When it is as described above, it is a substrate for an optical semiconductor device which is excellent in mechanical properties, heat resistance, and discoloration resistance and has little surface stickiness.

Further, in this case, it may be a mirror structure having a thermosetting resin or a seal material dam structure on the base.

In this case, as long as it has a mirror structure, it becomes a high beam, and if it has a seal dam structure, it can maintain a sealing material. The high quality of the shape.

Further, according to the present invention, an optical semiconductor device in which an optical semiconductor element is mounted on a substrate for an optical semiconductor device of the present invention can be provided.

As long as it is as described above, it has high mechanical stability, high durability, and high heat dissipation.

Furthermore, according to the invention, an optical half can be provided A method for producing a substrate for a conductor device, which is a method for producing a substrate for an optical semiconductor device having at least two electrical connection portions electrically connected to an optical semiconductor element, comprising: impregnating a polyfluorene oxide resin composition with fiber reinforcement a step of forming a component mounting recessed portion that penetrates the resin layer in at least a thickness direction of the optical semiconductor element in the thickness direction of the resin layer on the surface of the hardened resin layer The step of forming a plating layer on the inner surface of the element mounting recess.

As described above, it is possible to manufacture a substrate for an optical semiconductor device having high mechanical stability and high durability and high heat dissipation.

In this case, in the step of forming the element mounting recessed portion for accommodating and mounting the optical semiconductor element, the element mounting recessed portion may be formed on the base after the metal layer is bonded to the surface of the resin layer.

According to the above aspect, the element mounting recess having a desired depth can be easily formed.

Or formed to receive and mount the aforementioned optical semiconductor In the step of the element mounting recessed portion of the body element, a through hole corresponding to the element mounting recessed portion may be formed in the resin layer before the metal layer is joined, and then the resin layer and the metal layer may be bonded to each other.

According to the above aspect, the step of the step of forming the recess for mounting the component can be reduced.

Moreover, in this case, it is preferable that the recessed portion for the electrical connection portion that penetrates the resin layer at least in the thickness direction is formed on the resin layer side of the base, and the inner surface of the recess portion for the electrical connection portion is plated. The step of forming the aforementioned electrical connection portion electrically connected to the aforementioned metal layer is applied.

According to the above aspect, it is possible to manufacture a substrate for an optical semiconductor device having excellent heat dissipation properties. The substrate for an optical semiconductor device manufactured as described above can be connected to another substrate by a metal layer.

Further, in this case, there may be a step of forming a mirror structure or a seal material dam structure of a thermosetting resin on the base.

According to such a manufacturing method, a substrate for an optical semiconductor device having a high beam of light can be produced by forming a mirror structure, or a sealing material dam structure can be formed, and a high-quality substrate for an optical semiconductor device capable of maintaining the shape of the sealing material can be manufactured.

The substrate for an optical semiconductor device of the present invention is formed by immersing a polyoxyxylene resin composition on a resin layer side of a base on which a metal layer is bonded to a surface of a resin layer which is cured by a fiber-reinforced material, and is formed to accommodate and mount an optical semiconductor. Element mounting of the element that penetrates the resin layer at least in the thickness direction Since the recessed portion is formed by forming a plating layer on the inner surface of the element mounting recessed portion, it is a substrate for an optical semiconductor device having high mechanical stability and high durability and high heat dissipation.

1‧‧‧Abutment

1a‧‧‧ resin layer

1b‧‧‧ metal layer

2‧‧‧Fiber-reinforced materials

2', 2" ‧ ‧ fiber

3‧‧‧Electrical connection

4‧‧‧Component mounting recess

5‧‧‧ plating layer

6‧‧‧ recess for electrical connection

7‧‧‧Mirror structure

8‧‧‧ Sealing material dam structure

9‧‧‧Resist

10, 20, 30‧‧‧ substrates for optical semiconductor devices

11, 21, 31‧‧‧ Optical semiconductor devices

12‧‧‧Optical semiconductor components

13‧‧‧metal foil

[Fig. 1] is a schematic view showing an example of a substrate for an optical semiconductor device of the present invention. (A) A schematic plan view. (B) A schematic cross-sectional view.

[Fig. 2] is a schematic plan view showing the fiber direction of the fiber layer of the fiber-reinforced material in the resin layer.

[Fig. 3] is a schematic plan view of a substrate for an optical semiconductor device in the form of a large-area printed circuit board of the present invention.

[Fig. 4] is an explanatory view illustrating an example of a method of manufacturing the optical semiconductor device of the present invention.

[Fig. 5] is a schematic cross-sectional view showing an example of a substrate for an optical semiconductor device of the present invention produced by the method for producing an optical semiconductor device of the present invention.

[Fig. 6] is a schematic view showing an example of a substrate for an optical semiconductor device of the present invention having a mirror structure (A) and a seal material dam structure (B).

Fig. 7 is a schematic cross-sectional view showing an example of the optical semiconductor device of the present invention.

[Fig. 8] is a schematic cross-sectional view showing an example of the optical semiconductor device of the present invention having a mirror structure (A) and a sealant dam structure (B) Figure.

Hereinafter, the embodiments of the present invention will be described, but the present invention is not limited thereto.

In the past, a substrate for an optical semiconductor device having an optical semiconductor device having high mechanical stability and high durability and high heat dissipation performance has been desired.

The present inventors have repeatedly conducted intensive discussions in order to achieve the above problems. As a result, it has been found that a base having a resin layer which is cured by impregnating the fiber reinforced material with a fiber reinforced material is used to achieve mechanical stability and high durability, and is used as a mounting region of the optical semiconductor element. The present invention is completed by forming a concave portion for mounting the element and forming a plating layer on the inner surface of the concave portion for mounting the element to achieve high heat dissipation.

First, the substrate for an optical semiconductor device of the present invention will be described.

[base]

A plan view of the substrate 10 for an optical semiconductor device of the present invention is shown in Fig. 1(A), and a cross-sectional view taken along line AA of Fig. 1(A) is shown in Fig. 1(B). The base 1 is a metal layer 1b in which the polysiloxane resin composition is impregnated into the three layers of the fiber-reinforced material 2 and the surface (underside) of the cured resin layer 1a is bonded. In this way, compared with the conventional epoxy substrate (such as FR-4), it is a base having a resin layer 1a mainly composed of a heat-resistant polyoxyxene resin, and is a long-term environmental test with high heat resistance. In the test (such as a high-temperature and high-humidity test), the substrate for an optical semiconductor device having no yellowing of the base and maintaining high reflectance for a long period of time is excellent. Further, such a substrate has high mechanical stability, is excellent in flexibility, and is easy to handle.

The resin layer 1a of the base 1 is preferably one which is impregnated with the prepreg of the fiber-reinforced material 2 by using at least one layer or more of the polyoxynoxy resin composition.

As long as it is as described above, it has a desired thickness and is more excellent in mechanical stability.

When a high-output diode (a light output is high, a large amount of waste heat is generated), or when a substrate for an optical semiconductor device is used in an environment where temperature rises (for example, a headlight near an engine of an automobile), regarding heat resistance Strict requirements are required. As long as it is the substrate for an optical semiconductor device of the present invention, it can meet the requirements of these.

As shown in FIG. 1(B), the element mounting recessed portion 4 for accommodating and mounting the optical semiconductor element is formed on the resin layer 1a side of the base 1. When the element mounting recessed portion 4 is formed to penetrate the resin layer 1a at least in the thickness direction, the depth is not particularly limited, and it may be reached even if it reaches the inside of the metal layer 1b. A plating layer 5 is formed on the inner surface of the element mounting recess 4 . The optical semiconductor element is housed and mounted in a concave portion on the formed plating layer 5.

As described above, the heat generated from the optical semiconductor element can be efficiently discharged from the plating layer 5 formed on the inner surface of the element mounting recess 4 to the outside, thereby becoming an optical semiconductor having high heat dissipation. Substrate for the device.

The thickness of the base 1 is preferably as thin as possible, and preferably has sufficient mechanical stability such as not to be bent by its own weight. The thickness of the base 1 is 1 mm or less, preferably 0.6 mm or less, and particularly preferably 0.4 mm or less.

The metal layer 1b and the plating layer 5 are not particularly limited, but may be formed of copper, nickel, gold, palladium, silver, or the like. Alternatively, it may be formed of a transparent conductive material such as an inorganic filler (a transparent conductive oxide (abbreviated as TCO)).

As shown in FIG. 1(B), the plating layer 5 is formed not only on the inner surface of the element mounting recess 4 but also on the upper end of the resin layer 1a. Next, it is preferable that most of the surface (for example, 50% or more) of the surface of the base 1 is covered with a plating layer. Since the metal generally exhibits high thermal conductivity, heat generated from the optical semiconductor element can be efficiently diffused to the outside by forming the plating layer on a large area on the surface of the base 1.

As shown in FIG. 3, the substrate 10 for an optical semiconductor device according to the present invention has the base 1 having a plurality of element mounting recesses 4 and at least two electrical connection portions 3 to be described later that are electrically connected to the optical semiconductor elements. Moreover, the form of the large-area printed substrate is adopted. Further, the optical semiconductor device substrate 10 can be divided into smaller individual units before and after the mounting of the optical semiconductor element.

[Polyoxygenated resin composition]

Polyoxyl resin is high in heat resistance and high in durability due to dielectric constant Since it is low and has low noise, it is very suitable as a constituent material of the resin layer 1a of the base 1. The polyoxymethylene resin composition is not particularly limited, but is preferably a curable polyoxynene resin composition, and is preferably a addition curing type or a condensation curing type polyoxymethylene resin composition. If it is such a polyoxyxylene resin composition, it can be easily molded even in the conventional molding apparatus, and a base having excellent mechanical properties and a small surface stickiness can be easily obtained. In addition, it is possible to easily obtain a substrate for an optical semiconductor device which is excellent in mechanical properties, heat resistance, and discoloration resistance and has little surface stickiness.

In particular, when a polyfluorene resin composition which is solid at room temperature is used as described in JP-A-2010-89493, the polyfluorene oxide resin composition is impregnated into the fiber in a state of being dissolved and dispersed in a solvent. In the reinforcing material, after the solvent is evaporated from the fiber reinforcing material, the composition is in the A-stage state and becomes solid. Therefore, it is easier to store the prepreg in which the polyoxynene resin composition is impregnated into the fiber-reinforced material, and it is easier to perform molding by a hot press, and further, the optical semiconductor device can be more freely used. The advantage of molding with the shape of the substrate. Further, the optical semiconductor device of the present invention produced by using the substrate for an optical semiconductor device has a long wavelength change due to a change in wavelength (tone) and a change in initial light beam or reflectance.

Further, an inorganic filler may be added to the above polyoxymethylene resin composition. Specifically, alumina, ceria, barium titanate, potassium titanate, barium titanate, calcium carbonate, aluminum carbonate, magnesium hydroxide, aluminum hydroxide, tantalum nitride, aluminum nitride, boron nitride are used. , carbonized bismuth, etc. These inorganic fillers may be used singly or in combination of two or more.

The shape and particle diameter of the inorganic filler are not particularly limited. The particle size of the filler material can be generally set to 0.01 to 50 μm, preferably 0.1 to 20 μm. The amount of the inorganic filler is not particularly limited. In general, it is preferably 1 to 1000 parts by mass, and preferably 5 to 800 parts by mass, based on 100 parts by mass of the total of the resin components.

In addition to the inorganic filler, the polyoxyxyl resin composition may be added with one or more additional substances. Examples of such a substance to be added include a diffusion medium, a dye, a filter medium, a reflection medium, and a conversion medium, and examples thereof include a luminescent dye, hollow particles, and a subsequent accelerator. According to such an additive, in particular, the substrate is made reflective, penetrating, or absorptive. In this way, the design choice of the substrate is increased by using one or more additive substances.

[Fiber reinforced material]

The fiber reinforced material is an inorganic fiber such as carbon fiber, glass fiber, quartz glass fiber, or metal fiber, an organic fiber such as an aromatic polyamide fiber, a polyimide fiber, or a polyamide fiber, and further, a ruthenium carbide fiber. Titanium carbide fibers, boron fibers, alumina fibers, and the like can be used depending on the characteristics of the product. Preferred fibers are glass fibers, quartz fibers, carbon fibers, and the like. Among them, glass fiber or quartz glass fiber having high insulation is particularly preferable. From other viewpoints, the fiber reinforced material is particularly excellent in a material exhibiting good adhesion to a polyoxyxylene resin composition and high mechanical load capacity. Further, the fiber reinforced material preferably has at least the same heat resistance as the polyoxymethylene resin composition and a low coefficient of thermal expansion.

In particular, as long as the fiber reinforced material is glass fiber, it becomes a substrate exhibiting excellent ultraviolet resistance and heat resistance. Further, by using glass fibers, it is possible to ensure good adhesion of the fiber-reinforced material and the polyoxymethylene resin composition. Further, the glass fiber is a material which is inexpensive and easy to handle.

Here, the direction of the fibers 2' and 2" of the fiber layer of the fiber-reinforced material 2 in the resin layer 1a of the base 1 is schematically shown in Fig. 2. As shown in Fig. 2, the fiber-reinforced material 2 is as shown in Fig. 2 It is preferable to have two or more fiber layers, and it is more preferable to have four fiber layers. Further, the fibers 2', 2" of each layer of the fiber reinforcement 2 are parallel to the main surface of the base 1. The direction extension is better. Generally, in one fiber layer of the fiber reinforced material, the plurality of fiber directions are substantially parallel, and the fiber directions are aligned. When the resin layer is provided with a fiber reinforced material composed of a plurality of layers, the fiber direction of each fiber layer is preferably rotated by 90° relative to each other. Here, "rotation" means that the directions of the fibers in the respective layers are rotated by 90° with respect to each other centering on the axis perpendicular to the upper surface and/or the lower surface of the resin layer.

The form of the fiber-reinforced material is not particularly limited, but is preferably a sheet of roving, cloth, or non-woven fabric in which long filaments are drawn in a specific direction, and a laminated body such as a chopped strand mat can be formed. .

Further, the fiber reinforced material may be completely surrounded by a polyoxymethylene resin. As long as it is as described above, since the fiber reinforced material is protected by the polyoxyxene resin, the metal or metal ions do not reach the fibers, so that, for example, metal ions can be prevented from moving along the fibers.

[Electrical connection]

As shown in Fig. 1 (A) and (B), the substrate 10 for an optical semiconductor device of the present invention has at least two electrical connection portions 3 electrically connected to the optical semiconductor element on the upper surface of the base 1. Each of the electrical connection portions 3 can be designed to be connected to the optical semiconductor element via a gold wire. Alternatively, it may be designed to be connected to the optical semiconductor element in a flip chip mounting manner.

As shown in FIG. 1(B), the electrical connection portion 3 is preferably formed on the inner surface of the electrical connection portion recessed portion 6 by plating, and is electrically connected to the metal layer 1b. The concave portion 6 is formed on the resin layer 1a side of the base 1 and penetrates the resin layer 1a at least in the thickness direction.

As described above, the heat dissipation property is further improved, and the metal layer 1b can be electrically connected to the external connection portion of the other substrate by, for example, soldering or bonding, and the space-saving electrical connection of the substrate can be realized. structure. In this case, the substrate 10 for an optical semiconductor device of the present invention is preferably one that can withstand the thermal stress generated in the soldering step. As long as such a substrate for an optical semiconductor device is used, it is possible to achieve, for example, a connection with an optical semiconductor element or an external connection portion with good yield. At this time, the metal layer 1b is preferably formed to be electrically insulated from each other on the external connection portion.

The material of the electrical connection portion 3 can be the same as the plating layer 5 on the inner surface of the component mounting recess 4 described above.

Further, the electrical connection portion 3 and the metal layer 1b may be composed of one metal or metal alloy, or may be composed of different metals or metal alloys. The plural layers formed by it.

For example, in the electrical connection portion 3, the first layer closest to the position of the base 1 is preferably a copper layer. The thickness of the first layer is preferably 8 μm or more and less than 500 μm. Further, a second metal layer of at least one of nickel, palladium, gold, and silver may be formed on the first layer. The thickness of these layers is preferably less than 25 μm, particularly preferably less than 5 μm, and most preferably less than 2 μm. Particularly, when a nickel-gold layer is formed on the copper layer, it is preferably less than 500 nm. Such a second layer system has a high cost effect and can be formed in a simple step, and can be effectively structured.

[Mirror structure, seal material dam structure]

As shown in FIG. 6(A), the substrate 20 for an optical semiconductor device of the present invention can be provided with a thermosetting resin mirror structure 7 on a base. As long as it has the mirror structure 7, it becomes a high beam. The mirror structure 7 is not particularly limited as long as it surrounds the optical semiconductor element and reflects light from the optical semiconductor element. Alternatively, as in the substrate 30 for an optical semiconductor device of the present invention shown in FIG. 6(B), the sealing material dam structure 8 may be used. The sealing material dam structure 8 is formed around the mounting region of the optical semiconductor element, and stops the flow of the sealing material when the optical semiconductor element is sealed, and maintains the shape of the sealing material.

As long as the mirror structure and the sealant dam structure are thermosetting resins, the adhesion to the resin layer of the base 1 is improved. However, the mirror structure and the seal material dam structure are not limited to those formed by resin molding, and for example, the upper end may be formed higher than the surface of the base. The plating layer constitutes a mirror structure and a seal material dam structure, and the plating layer is formed on the inner surface of the element mounting recess 4 or the electrical connection recess 6 .

Next, a method of manufacturing the substrate for an optical semiconductor device of the present invention will be described.

[Resin layer making step]

In the resin layer forming step, the polyoxyphthalocene resin composition is impregnated with the fiber-reinforced material and cured to form the resin layer 1a (Fig. 4A). It is preferable that the resin layer 1a is formed by using at least one layer or more of a prepreg and hardening it. The prepreg system can be produced by a solvent method or a hot melt method. The polyoxyxylene resin composition and the fiber reinforced material can be used in the same manner as those described for the above-mentioned substrate for an optical semiconductor device.

In the case of using the solvent method, a resin varnish in which a polyoxyxylene resin composition is dissolved in an organic solvent is prepared, and the resin varnish is impregnated with the fiber reinforced material, and the solvent is removed by heating to produce a prepreg. The thickness of the prepreg is determined depending on the thickness of the reinforcing fiber or the like to be used, and when the substrate is thickened, the reinforcing fiber is mostly laminated.

More specifically, the glass cloth is impregnated in a solution or dispersion of the polyoxynoxy resin composition, and the solvent is removed in a drying oven preferably at 50 to 150 ° C, more preferably 60 to 120 ° C. A polyfluorene prepreg can be obtained.

Further, when the hot melt method is used, the prepreg is produced by heating and dissolving the solid polyfluorene oxide composition to be impregnated into the fiber reinforced material.

The resin layer 1a was produced using the prepreg produced in this manner. At this time, the number of prepregs corresponding to the thickness of the insulating layer is superimposed, and pressure heating is performed to obtain the resin layer 1a.

[Metal layer forming step]

In the metal layer forming step, the metal layer 1b is bonded to the surface of the resin layer 1a to form the base 1 (Fig. 4B). This step can be implemented, for example, in the following manner.

By laminating a metal foil of 8 to 500 μm on the lower surface of the resin layer 1a, the metal layer 1b is joined by pressure heating using a vacuum press or the like at a pressure of 5 to 50 MPa and a temperature range of 70 to 180 °C. The metal foil at this time is not particularly limited, but copper, nickel, gold, palladium, or silver can be used, and a copper foil is suitably used from the viewpoint of electrical and economic efficiency.

[Step of forming a recess for component mounting]

In the element mounting recess forming step, the element mounting recess 4 (C of FIG. 4) is formed on the base 1 thus produced. At this time, the element mounting recessed portion 4 is formed to penetrate the resin layer 1a at least in the thickness direction. The depth of the element mounting recessed portion 4 is not particularly limited, and may be formed so as to reach the inside of the metal layer 1b, for example, a depth of several tens of μm or more from the surface of the metal layer 1b. The element mounting recess 4 is preferably 15% to 100% of the area of the die pad or the wire bonding pad. The element mounting recess 4 can be formed by, for example, a milling cutter or the like. At this time, the recess portion 6 for the electrical connection portion can be formed as needed.

[Plating Step]

In the plating forming step, the plating layer 5 is formed on the inner surface of the element mounting recess 4 (D of FIG. 4). As described above, in the case where the electrical connection portion 3 is formed on the inner surface of the electrical connection portion recessed portion 6 by plating, the inner surface of the element mounting recess portion 4 is formed as shown in FIG. 4D. A plating layer is formed on the inner surface of the concave portion 6 for the electrical connection portion and the entire surface of the base 1, and the patterning treatment for forming the plating layer on the electrical connection portion 3 may be performed in the subsequent step. As described above, the plating forming step and the electrical connecting portion forming step which will be described later can be easily performed.

The metal to be plated can be the same as those described in the above substrate for an optical semiconductor device. For example, in the case of performing copper plating, it is preferred to mix an appropriate amount of zinc in the plating solution. This is the effect of zinc on the catalyst and promotes the adhesion of copper plating. The method of forming the plating is not particularly limited, and a printing method, a dipping method, a vapor deposition method, a sputtering method, a plating method, or the like can be used. In order to ensure a good connection between the electrical connection portion 3 and the base 1, the surface on which the electrical connection portion of the base 1 is formed is preferably roughened.

[Electrical connection forming step]

In the electrical connection portion forming step, the plating layer formed in the above step is formed on at least two electrical connection portions 3 (E in FIG. 4) electrically connected to the optical semiconductor element. For example, the plating layer can be processed by a method generally used in a subtractive method or a drilling process, and a substrate (printed wiring board) having the electrical connection portion 3 can be obtained by etching.

The upper end of the plating layer formed on the inner surface of the electrical connection portion concave portion 6 or the element mounting concave portion 4 can be formed to be higher than the surface of the base, thereby forming a mirror structure and a seal material dam structure.

Through the above steps, the substrate for an optical semiconductor device of the present invention is produced.

After the step of forming the electrical connection portion, the step of filling the resist 9 of the thermosetting resin or the like (F of FIG. 4) or the substrate for the optical semiconductor device of the above-described large-area printed substrate can be obtained as needed. In the case of a substrate for a sheet of an optical semiconductor device, a cutting step (not shown) by cutting or milling is performed.

In the above-described method, in the step of forming the element mounting recessed portion for accommodating and mounting the optical semiconductor element, the element mounting recessed portion is formed on the base after the metal layer is bonded to the surface of the resin layer, but the present invention is not limited thereto. A through hole corresponding to the recess for mounting the component may be formed in the resin layer before the metal layer is joined, and then the resin layer and the metal layer may be bonded to each other. In the step of forming the element mounting recesses, when a plurality of recesses are formed, the apparatus such as a milling cutter is legally fast, but the method of forming the recesses for mounting the components can be performed by such a method to reduce the step time. At this time, the through hole of the resin layer can be formed by perforation by cutting the mold.

An example of the substrate for an optical semiconductor device of the present invention produced by the above steps is shown in Fig. 5.

In the fifth aspect (A), the plating layer 5 is formed on the inner surface of the element mounting recess 4, and the optical semiconductor element is housed and mounted in the concave portion of the plating layer 5. Further, it is formed by the inner surface of the recess portion 6 for the electrical connection portion. The plating layer forms the electrical connection portion 3.

In Fig. 5(B), after the metal layer forming step, the metal foil 13 of 8 to 500 μm is superposed on the upper surface of the substrate, and the pressure is 5 to 50 MPa and 70 to 180 ° C in the same manner as the metal layer forming step. The step of performing pressure heating using a vacuum presser or the like is performed in the temperature range, and thereafter, the substrate obtained by the step after the step of forming the element mounting recess is performed.

In the fifth aspect (C), the step of forming the element mounting recesses is performed from the lower surface side of the base, and thereafter, the substrate obtained by performing the steps after the plating forming step on the lower surface is used for mounting the elements. The recess is arranged downward. At this time, in the solder when the optical semiconductor device manufactured using the substrate and the external substrate are mounted, an improvement in the adhesion strength due to an anchor effect can be expected.

In the fifth aspect (D), a through hole corresponding to the element mounting recess 4 is formed in the resin layer before the bonding of the metal layer, and then the obtained resin layer and the metal layer are bonded to each other. In this substrate, the position of the lower end of the element mounting recess 4 is the same as the lower end of the resin layer.

Further, as shown in Fig. 6(A), the thermosetting resin mirror structure 7 or the sealant dam structure 8 can be molded on the base. Alternatively, as described above, the mirror structure or the seal dam may be omitted as long as the plating layer is formed to form the mirror structure and the seal material dam structure in such a manner that the upper end thereof is higher than the surface of the base. In the molding step of the structure, the plating layer is formed on the inner surface of the element mounting recess 4 or the electrical connection recess 6 .

Next, the optical semiconductor device of the present invention is described Bright.

As shown in Fig. 7, the optical semiconductor device 11 of the present invention is manufactured by mounting and mounting the optical semiconductor element 12 on the element mounting recess 4 of the optical semiconductor device substrate 10 of the present invention. In the optical semiconductor device 11 of the present invention, since the substrate for an optical semiconductor device of the present invention is used, it has high mechanical stability and high durability and high heat dissipation. In the seventh embodiment, a face up type optical semiconductor device is shown, but it may be a flip chip type optical semiconductor device. In this case, mechanical stability is high, and high durability and high heat dissipation are obtained. By.

[Mirror structure, seal material dam structure]

As shown in Fig. 8(A), the optical semiconductor device 21 of the present invention is a mirror structure 7 having a thermosetting resin on a base. As long as it has the mirror structure 7, it becomes a high beam. The mirror structure 7 is not particularly limited as long as it surrounds the optical semiconductor element and reflects light from the optical semiconductor element. Alternatively, as shown in Fig. 8(B), the sealing material dam structure 8 may be used. The sealing material dam structure 8 is formed around the mounting region of the optical semiconductor element, and stops the flow of the sealing material when the optical semiconductor element is sealed, and maintains the shape of the sealing material. In this way, the mirror structure or the seal dam structure which is made of a thermosetting resin is formed on the surface of the base, and the optical semiconductor device 31 having higher durability is improved.

The mirror structure and the heat hard used in the seal dam structure Examples of the chemical resin include: 1) a thermosetting polyfluorene composition, and 2) a thermosetting epoxy resin composed of a triazine derivative epoxy resin, an acid anhydride, a curing accelerator, and an inorganic filler. And 3) a mixed resin (mixed resin) composition composed of a thermosetting polyoxyxylene resin and an epoxy resin. However, the thermosetting resin is not limited thereto, and may be determined in accordance with the use of the final optical semiconductor device.

The thermosetting polyoxyphthalocene resin composition of the above 1) is represented by the condensation type thermosetting polyanthracene resin composition represented by the following average composition formula (1).

R ¹ _a Si(OR ² ) _b (OH) _c O _(4-abc)/2 (1) (wherein R ¹ represents the same or different organic groups having 1 to 20 carbon atoms, and R ² represents The same or different organic groups having 1 to 4 carbon atoms, and satisfying 0.8≦a≦1.5, 0≦b≦0.3, 0.001≦c≦0.5, 0.801≦a+b+c<2).

Other addition-type hardening type polyoxymethylene resin compositions can also be used.

The triazine derivative epoxy resin of the thermosetting epoxy resin composition of the above 2) is preferably a 1,3,5-triazine core derivative epoxy resin from the viewpoints of heat resistance, light resistance and the like. . The thermosetting epoxy resin composition is not limited to those composed of a triazine derivative or an acid anhydride as a curing agent, and an epoxy resin, an amine, a phenol curing agent, or the like which is conventionally known can be suitably used.

The mixed resin of the polyoxyxylene resin and the epoxy resin of the above 3) may, for example, be a copolymer composed of an epoxy resin and a polyoxyxylene resin.

In the composition of the above polyoxyl resin or epoxy resin Formulated with inorganic fillers. The inorganic filler to be blended is generally used in a composition such as a polyoxyxylene resin composition or an epoxy resin composition. For example, fibrous filling such as cerium oxide such as molten cerium oxide or crystalline cerium oxide, alumina, tantalum nitride, aluminum nitride, boron nitride, glass fiber, or wollastonite may be mentioned. Materials, antimony trioxide, etc. The average particle diameter or shape of these inorganic fillers is not particularly limited.

Titanium dioxide can be formulated in the resin composition used in the present invention. Titanium dioxide is used as a white coloring material, and it is suitable for any one of the rutile type and the anatase type of titanium dioxide in order to improve the whiteness and enhance the reflection efficiency of light. Further, the average particle diameter or shape is also not limited. In order to improve the compatibility with the resin or the inorganic filler, the titanium dioxide may be subjected to surface treatment in advance such as hydrous oxide such as Al or Si.

The amount of titanium dioxide to be added is 2 to 30% by mass of the entire composition, particularly preferably 5 to 10% by mass. When it is less than 2% by mass, sufficient whiteness may not be obtained, and if it exceeds 30% by mass, moldability such as unfilling or voids may be lowered.

The optical semiconductor device of the present invention can be used as an indicator lamp for notifying the outside of the illuminating device or the device for the purpose of projection of an automobile industrial machine requiring high durability or high heat dissipation. Further, it can also be used for indoor lighting or liquid crystal backlights in general households.

[Examples]

Hereinafter, although the examples and comparative examples of the present invention are shown, The present invention will be specifically described, but the present invention is not limited thereto.

(Example 1)

Two sheets of 70 μm sheets were laminated, and a 200 μm copper layer (metal layer) was heat-pressed underneath to form a base which was made of phenyl polyoxynitride containing titanium oxide as an inorganic filler. The resin composition is impregnated with glass fibers. Then, the element mounting recessed portion and the electrical connecting portion recessed portion are formed by a router, and the thickness of the panel below the residual copper layer is 100 μm. Thereafter, copper plating is formed on the entire surface of the base, the element mounting recess, and the inner surface of the electrical connection recess by electroless plating. Thereafter, two electrical connection portions are formed on the upper surface of the substrate by etching, and a metal coating layer on which Ni/Pd/Au plating is applied is formed on the surface thereof to obtain a substrate for an optical semiconductor device of the present invention.

Next, a plasma treatment was performed on the surface of the substrate at 100 W/30 seconds, and the mirror structure was molded for the treated surface by transferring the mold and using a polyoxymethylene resin composition. The optical semiconductor element is housed and mounted in a concave portion on the plating layer on the inner surface of the element mounting recess. A polyxylene-based die-bonding material (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name: 632DA-1) was press-coated on a hole in the mirror, and a blue LED chip (TR350M series manufactured by Cree) was mounted and allowed to stand at 150 ° C for 4 hours. It hardens. Thereafter, the electrical connection portion and the blue LED wafer were wire bonded (wire bonding) with a gold wire having a diameter of 30 μm.

Then, in the mirror, the composition of the yellow phosphor and the polyoxyn resin is kneaded and coated by a distributor of Musashi-engineering (letter The inner lining material of Koshihisa Chemical Co., Ltd., trade name: KJR-9022) was thermally cured at 150 ° C for 4 hours. After the heat curing, it is subjected to a dicing step to form a sheet, and an optical semiconductor device of the present invention as shown in Fig. 8 (A) is obtained.

(Comparative Examples 1, 2)

An optical semiconductor device was produced in the same manner as in Example 1 except that the FR-4 substrate (Comparative Example 1) and the AlN substrate (Comparative Example 2) were used as the base.

Then, the optical semiconductor device produced in Example 1 and Comparative Examples 1 and 2 was subjected to a high-temperature and high-humidity electric current test at 85 ° C / 85%, and the change in the initial beam values at 100 h, 500 h, and 1,000 h was confirmed. The results are shown in Table 1. When the initial beam is set to 100%, the optical semiconductor device of the first embodiment maintains a light beam of the same level as the optical semiconductor device of the ceramic AlN substrate (Comparative Example 2).

Further, in the optical semiconductor device produced in Example 1 and Comparative Examples 1 and 2, a high-temperature and high-humidity electric current test at 85 ° C / 85% was performed, and an optical semiconductor device of 100 h, 500 h, and 1,000 h was confirmed. The change in reflectivity. The results are shown in Table 2. When the initial reflectance is set to 100%, the optical semiconductor device of the first embodiment can maintain the reflectance to the same level or more as that of the optical semiconductor device of the FR-4 substrate (Comparative Example 1).

Further, the thermal conductivity of the substrate for an optical semiconductor device used in Example 1 and the substrate used in Comparative Examples 1 and 2 were compared. The thermal conductivity was measured by a laser flash method at room temperature of 25 °C. The results are shown in Table 3. The thermal conductivity of the substrate for an optical semiconductor device of the present invention is 350 W/mK, and the conventional FR-4 substrate is 0.6 W/mK, and the AlN substrate is 150 W/mK. From this, it is understood that the substrate for an optical semiconductor device of the present invention has a high thermal conductivity compared to other substrate systems.

(Examples 2 and 3)

In the same manner as in the first embodiment, except that the epoxy resin (Example 2) or the mixed resin of the polyoxynated resin and the epoxy resin (Example 3) was used for the transfer molding. An optical semiconductor device is provided.

In the optical semiconductor devices produced in Examples 2 to 3, a high-temperature and high-humidity electric current test at 85 ° C / 85% was carried out, and the initial beam values of 100 h, 500 h, and 1,000 h were confirmed. The results are shown in Table 4. Since the durability of the base is high, there is no large beam reduction in both types, and it is known to be good.

Further, the present invention is not limited to the above embodiment. The above-described embodiments are exemplified, and have substantially the same structure as the technical idea described in the patent application scope of the present invention, and all of them have the same effects, and are included in the technical scope of the present invention.

1‧‧‧Abutment

1a‧‧‧ resin layer

1b‧‧‧ metal layer

2‧‧‧Fiber-reinforced materials

3‧‧‧Electrical connection

4‧‧‧Component mounting recess

5‧‧‧ plating layer

6‧‧‧ recess for electrical connection

10‧‧‧Substrate for optical semiconductor devices

Claims (12)

A substrate for an optical semiconductor device, comprising: a substrate for an optical semiconductor device having at least two electrical connection portions electrically connected to an optical semiconductor element, wherein the polyfluorene resin composition is impregnated with a fiber reinforced material, a base of the metal layer is bonded to the surface of the hardened resin layer, and an element mounting recessed portion that penetrates the resin layer at least in the thickness direction of the optical semiconductor element is formed on the resin layer side of the base. A plating layer is formed on the inner surface of the element mounting recess. The substrate for an optical semiconductor device according to the first aspect of the invention, wherein the electrical connection portion is formed on the inner surface of the recess portion of the electrical connection portion by plating, and is electrically connected to the metal layer. The recess portion for the portion is formed on the resin layer side of the base and penetrates the resin layer at least in the thickness direction. The substrate for an optical semiconductor device according to the first aspect of the invention, wherein the fiber reinforced material is a glass fiber. The substrate for an optical semiconductor device according to any one of the first aspect, wherein the resin layer of the base is at least one layer or more, and the polyfluorene resin composition is impregnated with the fiber reinforcement. The prepreg of the material and harden it. The substrate for an optical semiconductor device according to any one of claims 1 to 3, wherein the polyoxyxylene resin composition is a condensation-hardening type or an addition-curable polyphthalocene resin composition. As described in any one of items 1 to 3 of the patent application scope A substrate for an optical semiconductor device having a mirror structure of a thermosetting resin or a seal material dam structure on the base. An optical semiconductor device in which an optical semiconductor device is mounted on a substrate for an optical semiconductor device according to any one of the first to sixth aspects of the invention. A method for producing a substrate for an optical semiconductor device, which is a method for producing a substrate for an optical semiconductor device having at least two electrical connection portions electrically connected to an optical semiconductor element, comprising: impregnating a polyoxyxylene resin composition with a fiber-reinforced material, the resin layer side of the base of the metal layer is bonded to the surface of the hardened resin layer, and a step of accommodating and mounting the element semiconductor mounting recessed portion of the optical semiconductor element that penetrates the resin layer at least in the thickness direction is formed. A step of forming a plating layer on the inner surface of the element mounting recess. In the method of manufacturing a substrate for an optical semiconductor device according to the eighth aspect of the invention, in the step of forming the recess for mounting the component for accommodating and mounting the optical semiconductor element, the metal layer is bonded to the surface of the resin layer. The subsequent base is formed as the element mounting recess. The method for producing a substrate for an optical semiconductor device according to the eighth aspect of the invention, wherein the resin layer before bonding the metal layer is formed in a step of forming a recess for mounting an element for accommodating and mounting the optical semiconductor element A through hole corresponding to the recess for mounting the component is formed, and then the resin layer and the metal layer are bonded to each other. As described in any of items 8 to 10 of the patent application scope In the method for producing a substrate for an optical semiconductor device, the recess portion for the electrical connection portion that penetrates the resin layer at least in the thickness direction is formed on the resin layer side of the base, and the electrical connection portion is formed by plating. The step of forming the aforementioned electrical connection portion electrically connected to the metal layer is formed by the inner surface of the recess. The method for producing a substrate for an optical semiconductor device according to any one of the items of the present invention, comprising: a mirror structure or a seal material dam structure in which a thermosetting resin is formed on the base; The steps.