TWI532128B - Electronic device package structure and manufacturing method thereof - Google Patents

Electronic device package structure and manufacturing method thereof Download PDF

Info

Publication number
TWI532128B
TWI532128B TW102123263A TW102123263A TWI532128B TW I532128 B TWI532128 B TW I532128B TW 102123263 A TW102123263 A TW 102123263A TW 102123263 A TW102123263 A TW 102123263A TW I532128 B TWI532128 B TW I532128B
Authority
TW
Taiwan
Prior art keywords
substrate
electronic component
gas barrier
package structure
component package
Prior art date
Application number
TW102123263A
Other languages
Chinese (zh)
Other versions
TW201426916A (en
Inventor
葉樹棠
何家充
Original Assignee
財團法人工業技術研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 財團法人工業技術研究院 filed Critical 財團法人工業技術研究院
Priority to US14/091,341 priority Critical patent/US9847512B2/en
Publication of TW201426916A publication Critical patent/TW201426916A/en
Application granted granted Critical
Publication of TWI532128B publication Critical patent/TWI532128B/en

Links

Description

電子元件封裝結構與其製作方法 Electronic component package structure and manufacturing method thereof

本揭露是有關於一種封裝結構,且特別是有關於一種環境敏感電子元件之封裝結構。 The present disclosure relates to a package structure, and more particularly to a package structure for an environmentally sensitive electronic component.

電子產品中元件設計愈來愈精密,相對的,對於水氣/氧氣的阻障能力的需求也隨之提升。一般用來判定水氣/氧氣阻障層能力的指標為水氣穿透率(Water Vapor Transmission Rate;WVTR)與氧氣穿透率(Oxygen Transmission Rate;OTR)。針對可撓式或軟性基板的結構,其對滲入阻隔層的要求相當嚴苛。因此,對於軟性封裝技術,具備能達成高阻水阻氣要求之結構或材料誠然重要。 The component design in electronic products is becoming more and more sophisticated, and the demand for moisture/oxygen barrier capability is also increasing. Generally used to determine the water vapor / oxygen barrier capacity indicators are Water Vapor Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR). For the structure of a flexible or flexible substrate, the requirements for infiltrating the barrier layer are quite severe. Therefore, for flexible packaging technology, it is important to have a structure or material that can achieve high water resistance and gas barrier requirements.

本揭露提出一種電子元件封裝結構,包括第一基板、第二基板與至少一電子元件。該第一基板具有第一表面與相對於該第一表面之第二表面,而該電子元件配置於該第一基板之該第一 表面上。電子元件封裝結構更包括配置於該第一基板上並覆蓋住該電子元件與該第一基板之該第一表面之膠材。該第二基板具有第三表面與相對於該第三表面之第四表面,且該第二基板配置於該第一基板與該膠材上。至少該第一基板與該第二基板兩者之一具有阻氣結構內埋於其中,而該第一基板與該第二基板以該膠材接著,使該電子元件與該阻氣結構位於該第一基板與該第二基板之間。 The present disclosure provides an electronic component package structure including a first substrate, a second substrate, and at least one electronic component. The first substrate has a first surface and a second surface opposite to the first surface, and the electronic component is disposed on the first surface of the first substrate On the surface. The electronic component package structure further includes a glue material disposed on the first substrate and covering the first surface of the electronic component and the first substrate. The second substrate has a third surface and a fourth surface opposite to the third surface, and the second substrate is disposed on the first substrate and the glue. At least one of the first substrate and the second substrate has a gas barrier structure embedded therein, and the first substrate and the second substrate are followed by the glue, so that the electronic component and the gas barrier structure are located Between the first substrate and the second substrate.

本揭露提出一種製造電子元件封裝之方法,首先,提供一載具,並提供第一基板,設置在該載具上,而該第一基板具有一第一阻氣層位在該第一基板上。提供一第二基板,設置在該第一阻氣層上,而該第二基板具有一第二阻氣層位在該第二基板上,且該第二基板與該第二阻氣層中形成有多個溝渠。形成一第一阻氣結構填滿該些溝渠之後,設置一電子元件於該第二阻氣層上。接著,提供一蓋板,其具有一第二阻氣結構突出於該蓋板表面。配置一膠材於該蓋板上,使該膠材之面積與該蓋板相同。將該第二基板與該蓋板接著,該蓋板之該第二阻氣結構與該第二基板之該第一阻氣結構相接,使該電子元件置於該蓋板與該第二基板之間。 The present disclosure provides a method of manufacturing an electronic component package. First, a carrier is provided, and a first substrate is disposed on the carrier, and the first substrate has a first gas barrier layer on the first substrate. . Providing a second substrate disposed on the first gas barrier layer, wherein the second substrate has a second gas barrier layer on the second substrate, and the second substrate and the second gas barrier layer are formed There are multiple ditches. After forming a first gas barrier structure to fill the trenches, an electronic component is disposed on the second gas barrier layer. Next, a cover is provided having a second gas barrier structure projecting from the surface of the cover. A glue material is disposed on the cover plate such that the area of the glue material is the same as the cover plate. The second substrate and the cover plate are followed, the second gas barrier structure of the cover plate is in contact with the first gas barrier structure of the second substrate, and the electronic component is placed on the cover plate and the second substrate between.

為讓本揭露之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.

10、12、14、16‧‧‧電子元件封裝結構 10,12,14,16‧‧‧Electronic component packaging structure

100‧‧‧第一基板 100‧‧‧First substrate

110、970、9100‧‧‧膠材 110, 970, 9100‧‧‧ glue

120‧‧‧第二基板 120‧‧‧second substrate

100a、120a、160a‧‧‧上表面 100a, 120a, 160a‧‧‧ upper surface

100b、120b‧‧‧下表面 100b, 120b‧‧‧ lower surface

140‧‧‧附加基板 140‧‧‧Additional substrate

150、950‧‧‧電子元件 150, 950‧‧‧ electronic components

160‧‧‧硬塗層 160‧‧‧hard coating

1100、5100、5100B、5100C、5100D、6100、7100、8100、9800‧‧‧阻氣結構 1100, 5100, 5100B, 5100C, 5100D, 6100, 7100, 8100, 9800‧‧‧ gas barrier structure

5110、7110‧‧‧柔軟核心 5110, 7110‧‧‧ soft core

5120、7120‧‧‧撓曲保護層 5120, 7120‧‧‧ flex protection layer

5130、7130‧‧‧柔軟層 5130, 7130‧‧‧ soft layer

5140、7140‧‧‧吸氣層 5140, 7140‧‧‧ suction layer

600、700、800、804、900、920‧‧‧基板 600, 700, 800, 804, 900, 920‧‧‧ substrates

600A‧‧‧元件設置區 600A‧‧‧Component setting area

70、80、90‧‧‧載具 70, 80, 90‧‧‧ Vehicles

702、802‧‧‧光阻層 702, 802‧‧‧ photoresist layer

702a、802a‧‧‧圖案化光阻層 702a, 802a‧‧‧ patterned photoresist layer

810、910、930‧‧‧阻氣層 810, 910, 930‧‧‧ gas barrier

980‧‧‧上蓋板 980‧‧‧Upper cover

S‧‧‧溝渠 S‧‧‧ Ditch

圖1A-1E繪示本揭露實施例之電子元件封裝結構的例示剖面圖。 1A-1E are schematic cross-sectional views showing an electronic component package structure of an embodiment of the present disclosure.

圖2A-2E繪示本揭露實施例之電子元件封裝結構的例示剖面圖。 2A-2E are schematic cross-sectional views showing an electronic component package structure according to an embodiment of the present disclosure.

圖3A-3E繪示本揭露實施例之電子元件封裝結構的例示剖面圖。 3A-3E are schematic cross-sectional views showing an electronic component package structure according to an embodiment of the present disclosure.

圖4A-4D繪示本揭露實施例之電子元件封裝結構的例示剖面圖。 4A-4D are cross-sectional views showing an electronic component package structure according to an embodiment of the present disclosure.

圖5A-5E繪示本揭露實施例之具有側向阻氣結構之基板的剖面局部放大圖。 5A-5E are partial enlarged views of a cross section of a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure.

圖6A-6F繪示本揭露實施例之具有側向阻氣結構之基板的例示俯視圖。 6A-6F are schematic top views of a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure.

圖7A-7D乃是繪示本揭露一實施例之具有側向阻氣結構之基板的製造方法各步驟之剖面示意圖。 7A-7D are schematic cross-sectional views showing respective steps of a method of fabricating a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure.

圖8A-8D乃是繪示本揭露另一實施例之具有側向阻氣結構之基板的製造方法各步驟之剖面示意圖。 8A-8D are schematic cross-sectional views showing respective steps of a method of fabricating a substrate having a lateral gas barrier structure according to another embodiment of the present disclosure.

圖9A-9E乃是繪示本揭露實施例之利用具有側向阻氣結構基板構成之封裝結構的製造方法步驟之剖面示意圖。 9A-9E are cross-sectional views showing the steps of a method of fabricating a package structure having a lateral gas barrier structure substrate according to an embodiment of the present disclosure.

圖1A繪示本揭露一實施例之電子元件封裝結構的剖面 圖。此實施例以撓性或軟性基板設計加以說明,但基板不限於是撓性或軟性基板。電子元件封裝結構10乃包括至少一第一基板100、配置於第一基板100上的一電子元件150與配置於第一基板100上的一膠材110以及一第二基板120。該第二基板120配置於該第一基板100與該膠材110之上,該電子元件150位於該第二基板120與該第一基板100之間,而該第二基板120與該第一基板100以該膠材110相黏著並將該電子元件150包封於該膠材110之內。該電子元件150可為一環境敏感電子元件,例如為主動式或被動式有機發光二極體(OLED)元件,且可以是向上發光或向下發光的OLED元件。 1A is a cross-sectional view showing an electronic component package structure according to an embodiment of the present disclosure. Figure. This embodiment is described in terms of a flexible or flexible substrate design, but the substrate is not limited to being a flexible or flexible substrate. The electronic component package structure 10 includes at least one first substrate 100, an electronic component 150 disposed on the first substrate 100, a glue 110 disposed on the first substrate 100, and a second substrate 120. The second substrate 120 is disposed on the first substrate 100 and the adhesive material 110. The electronic component 150 is located between the second substrate 120 and the first substrate 100, and the second substrate 120 and the first substrate are disposed. 100 is adhered to the glue 110 and the electronic component 150 is enclosed within the glue 110. The electronic component 150 can be an environmentally sensitive electronic component, such as an active or passive organic light emitting diode (OLED) component, and can be an OLED component that emits light upward or downward.

該第二基板120或第一基板100例如是可撓性基板。上述可撓性基板的材質可為聚乙烯對苯二甲酸酯(polyethylene terephthalate,PET)、聚間苯二甲酸乙二酯(polyethylene naphthalate,PEN)、聚醚碸(polyethersulfone,PES)、聚甲基丙烯酸甲酯(polymethyl methacrylate,PMMA)、聚碳酸酯(polycarbonate,PC)、聚亞醯胺(polyimide,PI)或金屬箔(metal foil)。膠材110的材質例如是壓克力樹脂(acrylic resin)、環氧樹脂或矽膠,而膠材110的型態例如為感壓式膠材、填充式膠材、加熱固化膠材或紫外光照射固化膠材。 The second substrate 120 or the first substrate 100 is, for example, a flexible substrate. The material of the flexible substrate may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polymethyl. Polymethyl methacrylate (PMMA), polycarbonate (PC), polyimide (PI) or metal foil. The material of the rubber material 110 is, for example, an acrylic resin, an epoxy resin or a silicone rubber, and the type of the rubber material 110 is, for example, a pressure sensitive adhesive material, a filled adhesive material, a heat curing adhesive material or ultraviolet light irradiation. Curing the glue.

電子元件之封裝結構10可以是雙面發光型的裝置,其上第一基板均為透明。若將封裝結構10設計成單面發光型的裝置,至少一基板(亦即第一或第二基板任一)為透明,另一基板可為 透明、非透明或設置有反射層等,即可使得電子元件150所產生的光從第一基板100以及第二基板120其中之一發射出。 The package structure 10 of the electronic component may be a double-sided illumination type device in which the first substrate is transparent. If the package structure 10 is designed as a single-sided illumination type device, at least one substrate (ie, either the first or second substrate) is transparent, and the other substrate may be Transparent, non-transparent or provided with a reflective layer or the like, the light generated by the electronic component 150 can be emitted from one of the first substrate 100 and the second substrate 120.

該第一基板100具有側向阻氣結構1100設置於該第一基板100之內,也就是內埋於該第一基板100內,而當該第二基板120與該第一基板100相黏著後,該側向阻氣結構1100位於該電子元件150之下而位於該第二基板120與該第一基板100之間。 The first substrate 100 has a lateral gas barrier structure 1100 disposed in the first substrate 100, that is, embedded in the first substrate 100, and when the second substrate 120 is adhered to the first substrate 100, The lateral gas barrier structure 1100 is located below the electronic component 150 between the second substrate 120 and the first substrate 100.

圖1B-1E繪示本揭露實施例之電子元件封裝結構的剖面圖。圖1B-1E所示之電子元件封裝結構乃是圖1A之變化例。電子元件封裝結構10更可包括一附加基板140,該附加基板140乃是具功能性之基板,具有如觸控(touch)、彩色濾光(color filter)、色轉換與/或偏光等功能。如圖1B所示,電子元件封裝結構10之該附加基板140位於該第二基板120之上表面120a之上,該附加基板140位於該第二基板120與該電子元件150之上。 1B-1E are cross-sectional views showing an electronic component package structure according to an embodiment of the present disclosure. The electronic component package structure shown in Figs. 1B-1E is a modification of Fig. 1A. The electronic component package structure 10 further includes an additional substrate 140, which is a functional substrate having functions such as touch, color filter, color conversion, and/or polarization. As shown in FIG. 1B , the additional substrate 140 of the electronic component package structure 10 is located above the upper surface 120 a of the second substrate 120 . The additional substrate 140 is located above the second substrate 120 and the electronic component 150 .

如圖1C所示,電子元件封裝結構10之該附加基板140位於該第二基板120之下表面120b上,位於該第二基板120與該膠材110之間,而位於電子元件150之上。 As shown in FIG. 1C, the additional substrate 140 of the electronic component package structure 10 is located on the lower surface 120b of the second substrate 120, between the second substrate 120 and the glue 110, and above the electronic component 150.

如圖1D所示,電子元件封裝結構10之該附加基板140位於該第一基板100之上表面100a上,位於該膠材110與該電子元件150之下。 As shown in FIG. 1D, the additional substrate 140 of the electronic component package structure 10 is located on the upper surface 100a of the first substrate 100 under the adhesive material 110 and the electronic component 150.

如圖1E所示,電子元件封裝結構10之該附加基板140位於該第一基板100之下表面100b上、位於該電子元件150之下且位於該第一基板100之下。 As shown in FIG. 1E, the additional substrate 140 of the electronic component package structure 10 is located on the lower surface 100b of the first substrate 100, under the electronic component 150, and under the first substrate 100.

該附加基板140可透過一黏膠物質(未圖示)貼附於該第二基板120或該第一基板100上。一般而言,端視該附加基板140貼附於第二基板或第一基板結構之上,該附加基板140之面積大小可與其所貼附之基板相當。 The additional substrate 140 can be attached to the second substrate 120 or the first substrate 100 through a glue material (not shown). In general, the additional substrate 140 is attached to the second substrate or the first substrate structure, and the additional substrate 140 has an area comparable to the substrate to which it is attached.

該電子元件封裝結構10之設計為至少第一基板具有側向阻氣結構1100,其為立體結構內嵌於基板之內,也就是阻氣結構1100並未突出於第一基板100之上表面100a,也未突出於其下表面100b,但內埋式阻氣結構1100可以有效提供阻氣之功效。 The electronic component package structure 10 is designed such that at least the first substrate has a lateral gas barrier structure 1100 embedded in the substrate in a three-dimensional structure, that is, the gas barrier structure 1100 does not protrude from the upper surface 100a of the first substrate 100. It does not protrude from the lower surface 100b, but the buried gas barrier structure 1100 can effectively provide the effect of blocking gas.

圖2A繪示本揭露一實施例之電子元件封裝結構的剖面圖。此實施例以撓性或軟性基板設計加以說明,但基板不限於是撓性或軟性基板。圖2A之電子元件封裝結構12與圖1A之封裝結構10之差異主要在於該第二基板120具有側向阻氣結構1100設置於該第二基板120之內,也就是內埋於該第二基板120內,而當該第二基板120與該第一基板100相黏著後,該側向阻氣結構1100位於該電子元件150之上而位於該第二基板120與該第一基板100之間。 2A is a cross-sectional view showing an electronic component package structure according to an embodiment of the present disclosure. This embodiment is described in terms of a flexible or flexible substrate design, but the substrate is not limited to being a flexible or flexible substrate. The difference between the electronic component package structure 12 of FIG. 2A and the package structure 10 of FIG. 1A is mainly that the second substrate 120 has a lateral gas barrier structure 1100 disposed in the second substrate 120, that is, embedded in the second substrate. After the second substrate 120 is adhered to the first substrate 100, the lateral gas barrier structure 1100 is located above the electronic component 150 between the second substrate 120 and the first substrate 100.

同樣地,圖2B-2E繪示本揭露實施例之電子元件封裝結構的剖面圖。圖2B-2E所示之電子元件封裝結構乃是圖2A之變化例。電子元件封裝結構12更可包括一附加基板140,該附加基板140乃是具功能性之基板,具有如觸控(touch)、彩色濾光(color filter)、色轉換與/或偏光等功能。如圖2B所示,電子元件封裝結構12之該附加基板140位於該第二基板120之上表面120a上, 該附加基板140位於該第二基板120與該電子元件150之上。 Similarly, FIGS. 2B-2E are cross-sectional views showing the electronic component package structure of the embodiment of the present disclosure. The electronic component package structure shown in Figs. 2B-2E is a variation of Fig. 2A. The electronic component package structure 12 further includes an additional substrate 140, which is a functional substrate having functions such as touch, color filter, color conversion, and/or polarization. As shown in FIG. 2B, the additional substrate 140 of the electronic component package structure 12 is located on the upper surface 120a of the second substrate 120. The additional substrate 140 is located on the second substrate 120 and the electronic component 150.

如圖2C所示,電子元件封裝結構12之該附加基板140位於該第二基板120之下表面120b上,位於該第二基板120與該膠材110之間,而位於電子元件150之上。 As shown in FIG. 2C, the additional substrate 140 of the electronic component package structure 12 is located on the lower surface 120b of the second substrate 120, between the second substrate 120 and the glue 110, and above the electronic component 150.

如圖2D所示,電子元件封裝結構12之該附加基板140位於該第一基板100之上表面100a上,位於該膠材110與該電子元件150之下。 As shown in FIG. 2D, the additional substrate 140 of the electronic component package structure 12 is located on the upper surface 100a of the first substrate 100 under the adhesive material 110 and the electronic component 150.

如圖2E所示,電子元件封裝結構12之該附加基板140位於該第一基板100之下表面100b上、位於該電子元件150之下且位於該第一基板100之下。 As shown in FIG. 2E, the additional substrate 140 of the electronic component package structure 12 is located on the lower surface 100b of the first substrate 100, under the electronic component 150, and under the first substrate 100.

該電子元件封裝結構12之設計為第二基板具有側向阻氣結構1100,其為立體結構內嵌於第二基板120之內,也就是阻氣結構1100並未突出於第二基板120之下表面120b,也未突出於其上表面120a,但內埋式阻氣結構1100可以有效提供阻氣之功效。 The electronic component package structure 12 is designed such that the second substrate has a lateral gas barrier structure 1100 embedded in the second substrate 120 in a three-dimensional structure, that is, the gas barrier structure 1100 does not protrude below the second substrate 120. The surface 120b does not protrude from the upper surface 120a, but the buried gas barrier structure 1100 can effectively provide the effect of gas barrier.

圖3A-3E繪示本揭露實施例之電子元件封裝結構的剖面圖。與圖1A-1E之封裝結構10或圖2A-2E之封裝結構12相較,圖3A-3E中之電子元件封裝結構14之差異主要在於該第一基板100與第二基板120均具有側向阻氣結構1100設置於該下、第二基板100,120之內,也就是內埋於該第一基板100內與內埋於第二基板120內,而當該第二基板120與該第一基板100相黏著後,位於該第二基板120與該第一基板100之間的該電子元件150之上下均有該側向阻氣結構1100提供屏障,如圖3A。 3A-3E are cross-sectional views showing an electronic component package structure according to an embodiment of the present disclosure. The difference between the electronic component package structure 14 in FIGS. 3A-3E is mainly in that the first substrate 100 and the second substrate 120 have lateral directions as compared with the package structure 10 of FIGS. 1A-1E or the package structure 12 of FIGS. 2A-2E. The gas barrier structure 1100 is disposed in the lower and second substrates 100, 120, that is, embedded in the first substrate 100 and embedded in the second substrate 120, and when the second substrate 120 and the first substrate 100 are After being adhered, the lateral gas barrier structure 1100 is provided with a barrier above and below the electronic component 150 between the second substrate 120 and the first substrate 100, as shown in FIG. 3A.

如圖3B所示,更包括一附加基板140,其乃是具功能性之基板,具有如觸控(touch)、彩色濾光(color filter)、色轉換與/或偏光等功能。如圖3B所示,電子元件封裝結構14之該附加基板140位於該第二基板120之上表面120a上,該附加基板140位於該第二基板120與該電子元件150之上。 As shown in FIG. 3B, an additional substrate 140 is further included, which is a functional substrate having functions such as touch, color filter, color conversion and/or polarization. As shown in FIG. 3B, the additional substrate 140 of the electronic component package structure 14 is located on the upper surface 120a of the second substrate 120. The additional substrate 140 is located above the second substrate 120 and the electronic component 150.

如圖3C所示,電子元件封裝結構14之該附加基板140位於該第二基板120之下表面120b上,位於該第二基板120與該膠材110之間,而位於電子元件150之上。 As shown in FIG. 3C, the additional substrate 140 of the electronic component package structure 14 is located on the lower surface 120b of the second substrate 120, between the second substrate 120 and the glue 110, and above the electronic component 150.

如圖3D所示,電子元件封裝結構14之該附加基板140位於該第一基板100之上表面100a上,位於該膠材110與該電子元件150之下且位於該第一基板100之上。 As shown in FIG. 3D, the additional substrate 140 of the electronic component package structure 14 is located on the upper surface 100a of the first substrate 100, under the adhesive material 110 and the electronic component 150, and above the first substrate 100.

如圖3E所示,電子元件封裝結構14之該附加基板140位於該第一基板100之下表面100b上、位於該電子元件150之下且位於該第一基板100之下。 As shown in FIG. 3E, the additional substrate 140 of the electronic component package structure 14 is located on the lower surface 100b of the first substrate 100, under the electronic component 150, and under the first substrate 100.

電子元件之封裝結構14可以是雙面發光型的裝置,其上第一基板均為透明。若將封裝結構14設計成單面發光型的裝置,至少一基板(亦即第一或第二基板任一者)為透明,另一基板可為透明、非透明或設置有反射層等,即可使得電子元件150所產生的光從第一基板100以及第二基板120其中之一發射出。 The package structure 14 of the electronic component may be a double-sided illumination type device in which the first substrate is transparent. If the package structure 14 is designed as a single-sided illumination type device, at least one substrate (ie, either the first or second substrate) is transparent, and the other substrate may be transparent, non-transparent or provided with a reflective layer, etc. Light generated by the electronic component 150 may be emitted from one of the first substrate 100 and the second substrate 120.

此外,類似於圖1A之電子元件封裝結構10,圖4A-4D繪示本揭露實施例之電子元件封裝結構的剖面圖。圖4A-4D所示之電子元件封裝結構乃是圖1A之簡化版。電子元件封裝結構16 乃包括至少一第一基板100、配置於第一基板100上的一電子元件150與配置於第一基板100上的一膠材110。與圖2A-2E之封裝結構12相較,電子元件封裝結構16不具第二基板。該電子元件150位於該第一基板100之上、該膠材110與該第一基板100之間,而該電子元件150包封於該膠材110之內。該第一基板100具有側向阻氣結構1100設置於該第一基板100之內,也就是內埋於該第一基板100內,該側向阻氣結構1100位於該電子元件150之下而位於該膠材110與該第一基板100之間。電子元件封裝結構16更可包括一硬塗層160塗佈於該膠材110之上,可用來增加多層膜封裝體的硬度(hardness)。該硬塗層160之材料例如是膠體塗料(colloidal lacquer)。 In addition, similar to the electronic component package structure 10 of FIG. 1A, FIGS. 4A-4D are cross-sectional views showing the electronic component package structure of the embodiment of the present disclosure. The electronic component package structure shown in Figures 4A-4D is a simplified version of Figure 1A. Electronic component package structure 16 The method includes a first substrate 100, an electronic component 150 disposed on the first substrate 100, and a glue 110 disposed on the first substrate 100. Compared to the package structure 12 of Figures 2A-2E, the electronic component package structure 16 does not have a second substrate. The electronic component 150 is disposed on the first substrate 100 , between the adhesive material 110 and the first substrate 100 , and the electronic component 150 is encapsulated within the adhesive material 110 . The first substrate 100 has a lateral gas barrier structure 1100 disposed within the first substrate 100, that is, embedded in the first substrate 100. The lateral gas barrier structure 1100 is located under the electronic component 150. The glue 110 is interposed between the first substrate 100. The electronic component package structure 16 further includes a hard coat layer 160 coated on the glue 110 to increase the hardness of the multilayer film package. The material of the hard coat layer 160 is, for example, a colloidal lacquer.

同樣地,圖4B-4D所示之電子元件封裝結構乃是圖4A之結構變化。電子元件封裝結構16更可包括一附加基板140,該附加基板140乃是具功能性之基板,具有如觸控(touch)、彩色濾光(color filter)、色轉換與/或偏光等功能。如圖4B-4D所示,電子元件封裝結構16之該附加基板140位於該膠材110上的硬塗層160之上表面160a之上(圖4B)、該附加基板140位於該第一基板100之上表面100a之上且位於該第一基板100與該電子元件150之間(圖4C),或者該附加基板140位於該第一基板100之下表面100b之上且位於該電子元件150之下(圖4D)。 Similarly, the electronic component package structure shown in FIGS. 4B-4D is a structural change of FIG. 4A. The electronic component package structure 16 further includes an additional substrate 140, which is a functional substrate having functions such as touch, color filter, color conversion, and/or polarization. As shown in FIGS. 4B-4D, the additional substrate 140 of the electronic component package structure 16 is located on the upper surface 160a of the hard coat layer 160 on the adhesive material 110 (FIG. 4B), and the additional substrate 140 is located on the first substrate 100. Above the upper surface 100a and between the first substrate 100 and the electronic component 150 (FIG. 4C), or the additional substrate 140 is located above the lower surface 100b of the first substrate 100 and under the electronic component 150 (Fig. 4D).

圖5A-5E繪示本揭露實施例之具有側向阻氣結構之基板的剖面局部放大圖。該基板100或120具有至少一阻氣結構5100 設置於該基板100或120內。該阻氣結構5100是由多層不同種類材料堆疊而成的結構。如圖5A,該阻氣結構5100至少包括一柔軟核心5110與相互交錯堆疊的撓曲保護層5120與柔軟層5130,相互交錯堆疊的撓曲保護層5120與柔軟層5130乃共形覆蓋於柔軟核心5110之上,而形成剖面例如為略呈梯形之立體結構,本揭露並不以此為限。 5A-5E are partial enlarged views of a cross section of a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure. The substrate 100 or 120 has at least one gas barrier structure 5100 It is disposed in the substrate 100 or 120. The gas barrier structure 5100 is a structure in which a plurality of layers of different kinds of materials are stacked. As shown in FIG. 5A, the gas barrier structure 5100 includes at least one soft core 5110 and a flexural protective layer 5120 and a soft layer 5130 which are alternately stacked with each other. The flexural protective layer 5120 and the soft layer 5130 which are alternately stacked are conformally covered by the soft core. Above the 5110, the cross-section is, for example, a slightly trapezoidal three-dimensional structure, and the disclosure is not limited thereto.

圖5B-5E中,該阻氣結構除了包括柔軟核心5110與相互交錯堆疊的撓曲保護層5120與柔軟層5130,阻氣結構更包括至少一吸氣層(Getter layer)5140。如圖5B之阻氣結構5100B,柔軟核心5110外可例如依序堆疊撓曲保護層5120、柔軟層5130、吸氣層5140、柔軟層5130與撓曲保護層5120,吸氣層5140位於兩柔軟層5130間,而撓曲保護層5120可為最外層。 In FIGS. 5B-5E, the gas barrier structure includes a soft core 5110 and a flexural protective layer 5120 and a soft layer 5130 which are alternately stacked, and the gas barrier structure further includes at least one getter layer 5140. As shown in the gas barrier structure 5100B of FIG. 5B, the flexible core 5110 may be, for example, sequentially stacked the flexural protective layer 5120, the soft layer 5130, the gettering layer 5140, the soft layer 5130 and the flexural protective layer 5120, and the gettering layer 5140 is located at two softnesses. Between layers 5130, and flex protection layer 5120 can be the outermost layer.

如圖5C之阻氣結構5100C,柔軟核心5110外可例如依序堆疊吸氣層5140、柔軟層5130、撓曲保護層5120、柔軟層5130與撓曲保護層5120,吸氣層5140位於柔軟核心5110與柔軟層5130間,而撓曲保護層5120可為最外層。 As shown in the gas barrier structure 5100C of FIG. 5C, the gettering layer 5140, the soft layer 5130, the flexural protective layer 5120, the soft layer 5130 and the flexural protective layer 5120 may be stacked, for example, in sequence, and the gettering layer 5140 is located at the soft core. 5110 and soft layer 5130, and flex protection layer 5120 can be the outermost layer.

如圖5D之阻氣結構5100D,柔軟核心5110外可例如依序堆疊吸氣層5140、柔軟層5130、吸氣層5140、柔軟層5130與撓曲保護層5120,吸氣層5140位於柔軟核心5110與柔軟層5130間或兩柔軟層5130間,而撓曲保護層5120可為最外層。 As shown in the gas barrier structure 5100D of FIG. 5D, the gettering layer 5140, the soft layer 5130, the gettering layer 5140, the soft layer 5130 and the flexural protective layer 5120 may be stacked, for example, in sequence, and the gettering layer 5140 is located at the soft core 5110. Between the soft layer 5130 or the two soft layers 5130, and the flexural protective layer 5120 can be the outermost layer.

側向阻氣結構也可包括兩種不同堆疊設計,如圖5E,側向阻氣結構設計包含如圖5A之阻氣結構5100之立體結構與如圖 5D之阻氣結構5100D之立體結構,兩者可間隔交替配置。此一設計可以針對封裝結構在不同位置(例如可視距晶片或電子元件所在位置之遠近位置或是否靠近邊緣等)對於阻氣需求之不同來調整或更動。側向阻氣結構可有效阻擋水氣與氧氣直接傳輸至電子元件,至少延長水氣與氧氣接觸至電子元件的路徑,而使水氣滲透不易。 The lateral gas barrier structure may also include two different stack designs, as shown in FIG. 5E, the lateral gas barrier structure design includes the three-dimensional structure of the gas barrier structure 5100 of FIG. 5A and The three-dimensional structure of the 5D gas barrier structure 5100D can be alternately arranged at intervals. This design can be adjusted or changed for the difference in gas barrier requirements for different locations of the package structure (eg, the distance from the location where the wafer or electronic component is located or whether it is near the edge, etc.). The lateral gas barrier structure can effectively block the direct transmission of moisture and oxygen to the electronic component, at least prolong the path of contact between the water vapor and the oxygen to the electronic component, and the water gas is not easily penetrated.

承上述,柔軟核心5110或柔軟層5130的材料可以是有機小分子材料(Small molecular materials)、有機寡聚合物(Oligomers)、有機-無機金屬共蒸鍍材料或無機金屬化合物材料等。上述之有機小分子化合物的分子量約介於10g/mol至2,000g/mol之間,如三(8-羥基喹啉)鋁(tris(8-hydroxyquinoline)-aluminum,Alq3)、N,N’-雙(萘-1-基)-N,N’-二苯基聯苯胺(N,N’-di(naphthalene-1-y1)-N,N’-diphenyl-benzidine,NPB)或酞菁銅鹽(Phthalocyanine copper complex,CuPc)。有機寡聚物的分子量約介於500g/mol至3,000g/mol之間,如對苯乙烯寡聚物(Phenylene vinylene oligomers)、芴寡聚物(Fluorene oligomers)。有機-無機金屬共蒸鍍材料可如前述有機材料與金屬材料共蒸鍍而得,有機-無機金屬共蒸鍍材料的分子量約介於3g/mol至500g/mol之間。 In the above, the material of the soft core 5110 or the soft layer 5130 may be small molecular materials, organic oligomers (Oligomers), organic-inorganic metal co-evaporation materials or inorganic metal compound materials. The above organic small molecule compound has a molecular weight of between about 10 g/mol and 2,000 g/mol, such as tris(8-hydroxyquinoline-aluminum, Alq3), N, N'- Bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (N,N'-di(naphthalene-1-y1)-N,N'-diphenyl-benzidine, NPB) or copper phthalocyanine (Phthalocyanine copper complex, CuPc). The organic oligomer has a molecular weight of between about 500 g/mol and 3,000 g/mol, such as Phenylene vinylene oligomers, Fluorene oligomers. The organic-inorganic metal co-evaporation material may be obtained by co-evaporation of the organic material and the metal material, and the molecular weight of the organic-inorganic metal co-evaporation material is between about 3 g/mol and 500 g/mol.

金屬材料例如是Al、Ag、Au、Be、Cr、Cu、Co、Fe、Ge、Ir、In、Mo、Mn、Mg、Ni、Nb、Pb、Pd、Pt、Ru、Rh、Sn、Si、Sb、Se、Ti、Ta、Te、V、W、Zr、Zn、Mg/Ag、Al/Ag、Al/Si、 Al/Si/Cu、Au/Ge、Au/Be、Au/Ge/Ni、Ni/Cr、Pb/Sn或In/Sn。 The metal material is, for example, Al, Ag, Au, Be, Cr, Cu, Co, Fe, Ge, Ir, In, Mo, Mn, Mg, Ni, Nb, Pb, Pd, Pt, Ru, Rh, Sn, Si, Sb, Se, Ti, Ta, Te, V, W, Zr, Zn, Mg/Ag, Al/Ag, Al/Si, Al/Si/Cu, Au/Ge, Au/Be, Au/Ge/Ni, Ni/Cr, Pb/Sn or In/Sn.

無機金屬化合物材料例如是Al2O3、AlN、BaTiO3、CeO2、Cr2O3、CuO、Dy2O3、Er2O3、Eu2O3、Ga2O3、GeO2、HfO2、Ho2O3、In2O3、氧化銦錫(ITO)、PbTiO3、MgO、MnO2、Nd2O3、NiO、Nb2O5、Pr2O3、Sm2O3、SiO2、SiO、Ta2O5、ThO2、SnO2、TiO2、Y2O3、ZnO、ZrO2、CdTe、ZnTe、CdSe、CdS、ZnS、MoS2、BaF2、MgF2、CaF2Li、MgP、LiF、Li2O、CaO或MgO。 The inorganic metal compound material is, for example, Al 2 O 3 , AlN, BaTiO 3 , CeO 2 , Cr 2 O 3 , CuO, Dy 2 O 3 , Er 2 O 3 , Eu 2 O 3 , Ga 2 O 3 , GeO 2 , HfO. 2 , Ho 2 O 3 , In 2 O 3 , indium tin oxide (ITO), PbTiO 3 , MgO, MnO 2 , Nd 2 O 3 , NiO, Nb 2 O 5 , Pr 2 O 3 , Sm 2 O 3 , SiO 2 , SiO, Ta 2 O 5 , ThO 2 , SnO 2 , TiO 2 , Y 2 O 3 , ZnO, ZrO 2 , CdTe, ZnTe, CdSe, CdS, ZnS, MoS 2 , BaF 2 , MgF 2 , CaF 2 Li , MgP, LiF, Li 2 O, CaO or MgO.

撓曲保護層5120的材料可以是無機金屬氣化物材料或金屬材料。金屬材料例如是Al、Ag、Mg、Mg-Ag或Mg-Al合金。無機金屬氧化物材料可以是例如氧化銦錫(ITO)、氧化鋅鋁(AZO)、氧化鋅銦(IZO)、WO3、MoO3、SiOx、SiNx、SiOxNy、Al2O3。而吸氣層5140之材料可以是鹼金屬/鹼土金屬鹵化物,如氟化鋰(LiF)、氟化鈉(NaF)、氟化銫(CsF)、氟化鎂(MgF2)、氟化鈣(CaF2)、氯化鈉(NaCl)、氯化鉀(KCl)、氯化銣(RbCl)、氯化鎂(MgCl2)或氯化鈣(CaCl2);鹼金屬/鹼土金屬氧化物,如氧化鋰(Li2O)、氧化銫(Cs2O)、氧化鎂(MgO)、氧化鈣(CaO)、LiBO2或K2SiO3;鹼金屬/鹼土金屬碳酸化合物,如碳酸鋰(Li2CO3)、碳酸鈉(Na2CO3)或碳酸銫(Cs2CO3);或者是鹼金屬碳酸化合物:CH3COOM(M=Li、Na、K、Rb或Cs)。 The material of the flexural protective layer 5120 may be an inorganic metal vapor material or a metal material. The metal material is, for example, an Al, Ag, Mg, Mg-Ag or Mg-Al alloy. The inorganic metal oxide material may be, for example, indium tin oxide (ITO), zinc aluminum oxide (AZO), zinc indium oxide (IZO), WO 3 , MoO 3 , SiOx, SiNx, SiOxNy, Al 2 O 3 . The material of the gettering layer 5140 may be an alkali metal/alkaline earth metal halide such as lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), magnesium fluoride (MgF 2 ), calcium fluoride. (CaF 2 ), sodium chloride (NaCl), potassium chloride (KCl), barium chloride (RbCl), magnesium chloride (MgCl 2 ) or calcium chloride (CaCl 2 ); alkali metal/alkaline earth metal oxides such as oxidation Lithium (Li 2 O), cerium oxide (Cs 2 O), magnesium oxide (MgO), calcium oxide (CaO), LiBO 2 or K 2 SiO 3 ; alkali metal/alkaline earth metal carbonate such as lithium carbonate (Li 2 CO 3 ), sodium carbonate (Na 2 CO 3 ) or cesium carbonate (Cs 2 CO 3 ); or an alkali metal carbonate compound: CH 3 COOM (M=Li, Na, K, Rb or Cs).

圖6A-6F繪示本揭露實施例之具有側向阻氣結構之基板的俯視圖。阻氣結構6100可設計具有特定圖案而鑲嵌位於基板600中。如圖6A、6C與6E,當阻氣結構6100設置在承載有電子 元件之基板時,阻氣結構6100環繞元件設置區600A設置,而以元件設置區600A位於中央的狀況來看,阻氣結構6100設置於所在基板600的周邊部。圖6A之阻氣結構6100例如是口字形(俯視),以相等或不等的間隔、依同中心(concentric)方式向外排列分佈於基板600中,且包圍住位於中間之元件設置區600A。圖6C之阻氣結構6100例如是非連續的格子形狀(俯視)環繞設置分佈於基板600中,包圍住位於中間之元件設置區600A。圖6E之阻氣結構6100例如是波浪形(俯視)環繞設置分佈於基板600中,包圍住位於中間之元件設置區600A。而與圖6A、6C與6E相較,圖6B、6D與6F乃是類似設計,可於沒有承載電子元件基板或無須考慮元件設置區的基板,圖案設計可分佈於整個基板,便於達成高阻氣高阻隔之功效。圖6B與6E之阻氣結構6100例如是方環形(框狀)或波浪狀環形,以相等或不等的間隔、依同中心(concentric)方式向外排列分佈於基板600中。而圖6D之阻氣結構6100例如是非連續的格子形狀(俯視)設置分佈於基板600中,阻氣結構之尺寸範圍例如為1 mm~100 mm。 6A-6F are top views of a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure. The gas barrier structure 6100 can be designed with a specific pattern to be embedded in the substrate 600. 6A, 6C and 6E, when the gas barrier structure 6100 is placed on the carrier When the substrate of the element is disposed, the gas barrier structure 6100 is disposed around the component setting region 600A, and the gas barrier structure 6100 is disposed at the peripheral portion of the substrate 600 where the component mounting region 600A is located at the center. The gas barrier structure 6100 of FIG. 6A is, for example, a chevron (top view), arranged outwardly in the substrate 600 at equal or unequal intervals in a concentric manner, and surrounding the component placement region 600A located in the middle. The gas barrier structure 6100 of FIG. 6C is, for example, a discontinuous lattice shape (top view) disposed around the substrate 600 to surround the component placement region 600A located in the middle. The gas barrier structure 6100 of FIG. 6E is, for example, undulating (top view) disposed around the substrate 600 to surround the component placement region 600A located in the middle. Compared with FIGS. 6A, 6C and 6E, FIGS. 6B, 6D and 6F are similar designs, and can be distributed on the entire substrate without the substrate carrying the electronic component or without considering the component mounting region, so as to achieve high resistance. The effect of high gas barrier. The gas barrier structures 6100 of FIGS. 6B and 6E are, for example, square ring-shaped (frame-like) or wavy annular rings arranged outwardly in the substrate 600 at equal or unequal intervals in a concentric manner. The gas barrier structure 6100 of FIG. 6D is disposed, for example, in a discontinuous lattice shape (top view) disposed in the substrate 600, and the gas barrier structure has a size range of, for example, 1 mm to 100 mm.

本實施例之阻氣結構6100例如是環繞元件設置區600A設置,因此可有效提升電子元件之封裝結構於所有側邊的阻隔水氣以及氧氣的能力。據此,電子元件之封裝結構可具有良好的阻隔水氣與氧氣的能力。本實施例中阻氣結構乃是環繞住元件設置區之四周邊,但根據本案之精神,在其他實施例中,阻氣結構也可以是只環繞元件設置區的至少一邊(例如,兩邊或三邊)設置,端 視封裝結構設計之要求。 The gas barrier structure 6100 of the present embodiment is disposed, for example, around the component setting region 600A, thereby effectively improving the ability of the package structure of the electronic component to block moisture and oxygen on all sides. Accordingly, the package structure of the electronic component can have a good ability to block moisture and oxygen. In this embodiment, the gas barrier structure surrounds the periphery of the component mounting region, but according to the spirit of the present invention, in other embodiments, the gas barrier structure may also surround only at least one side of the component setting region (for example, two sides or three Side) setting, end Depending on the requirements of the package structure design.

本揭露之阻氣結構設計不限於圖示所示之幾何圖形、尺寸大小或數量。本實施例之阻氣結構是以具有連續不斷之阻隔圖案的阻氣結構為例說明,但在其他實施例中,阻氣結構可以由接續或相鄰排列的多個非連續阻氣結構所組成。此外,本實施例是以設置一或多個阻氣結構為例說明,可以視位置或封裝電子元件之不同而調整設計,甚至針對多個不同電子元件封裝結構,可以採用不同堆疊結構(不同剖面結構)、不同圖案設計(不同俯視圖案)之任意組合。 The gas barrier structure design of the present disclosure is not limited to the geometry, size or number shown. The gas barrier structure of the present embodiment is exemplified by a gas barrier structure having a continuous barrier pattern, but in other embodiments, the gas barrier structure may be composed of a plurality of discontinuous gas barrier structures connected or adjacently arranged. . In addition, in this embodiment, the one or more gas barrier structures are taken as an example for illustration, and the design may be adjusted depending on the position or the packaged electronic components. Even for a plurality of different electronic component package structures, different stack structures (different sections may be adopted). Structure), any combination of different pattern designs (different top view patterns).

圖7A-7D繪示本揭露實施例之具有側向阻氣結構之基板的製造方法各步驟之剖面示意圖。如圖7A所示,先提供一基板700,此處,該基板700例如是一撓性基板(如聚亞醯胺基板),承載於載具70之上。並形成一光阻層702於於該基板700之上。 7A-7D are schematic cross-sectional views showing respective steps of a method of fabricating a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure. As shown in FIG. 7A, a substrate 700 is provided first. Here, the substrate 700 is, for example, a flexible substrate (such as a polyimide substrate) and is carried on the carrier 70. A photoresist layer 702 is formed on the substrate 700.

圖7B所示,例如以微影蝕刻方式圖案化該光阻層702而形成一圖案化光阻層702a。參見圖7C,接著以圖案化光阻層702a為蝕刻罩幕,對基板700進行蝕刻,形成多個溝渠S。蝕刻方式可包括乾式蝕刻或濕式蝕刻。溝渠S之深度例如是200~300微米,溝渠S之間的間隔介於例如200~300微米。 As shown in FIG. 7B, the photoresist layer 702 is patterned, for example, by photolithography to form a patterned photoresist layer 702a. Referring to FIG. 7C, the substrate 700 is etched by using the patterned photoresist layer 702a as an etching mask to form a plurality of trenches S. The etching method may include dry etching or wet etching. The depth of the trench S is, for example, 200 to 300 μm, and the interval between the trenches S is, for example, 200 to 300 μm.

如圖7D所示,依序沈積不同阻氣材料,該些阻氣材料包括前述實施例所述之吸氣層、柔軟層、撓曲保護層等所使用之材料,而視不同材料之需求以例如化學沈積法、蒸鍍法等技術形成該些不同阻氣材料。該些不同阻氣材料之多層沈積乃共形於溝渠S 之形狀並填滿該些溝渠S,而形成阻氣結構7100。依照該些溝渠S之圖案與深度,可以決定阻氣結構7100之圖案與尺寸大小。舉例而言,形成阻氣結構7100填滿該些溝渠S之步驟包括共形沈積至少一撓曲保護層7120、共形沈積至少一柔軟層7130與沈積形成一柔軟核心7110而形成該阻氣結構7100。形成阻氣結構7100填滿該些溝渠S之步驟更可包括沈積至少一吸氣層7140,而與該撓曲保護層7120以及該柔軟層7130相互堆疊於該柔軟核心周圍。該些後續更可包括形成一平坦層(未圖示)覆蓋於阻氣結構之最上方,達到平坦化之效果。該平坦層之形成乃因應平坦化之需求,為製程常見步驟,故後續省略不再贅述。 As shown in FIG. 7D, different gas barrier materials are sequentially deposited, and the gas barrier materials include materials used for the gettering layer, the soft layer, the flexural protective layer and the like described in the foregoing embodiments, and depending on the requirements of different materials, Such different gas barrier materials are formed by techniques such as chemical deposition, vapor deposition, and the like. The multilayer deposition of the different gas barrier materials is conformal to the trench S The shape and fills the trenches S to form a gas barrier structure 7100. According to the pattern and depth of the trenches S, the pattern and size of the gas barrier structure 7100 can be determined. For example, the step of forming the gas barrier structure 7100 to fill the trenches S includes conformally depositing at least one flexural protective layer 7120, conformally depositing at least one soft layer 7130 and depositing to form a soft core 7110 to form the gas barrier structure. 7100. The step of forming the gas barrier structure 7100 to fill the trenches S further includes depositing at least one gettering layer 7140, and the flexural protective layer 7120 and the soft layer 7130 are stacked on top of the soft core. The subsequent steps may further include forming a flat layer (not shown) covering the uppermost portion of the gas barrier structure to achieve the effect of planarization. The formation of the flat layer is a common step in the process for the flattening, so the subsequent omission will not be repeated.

圖8A-8D繪示本揭露實施例之具有側向阻氣結構之基板的製造方法各步驟之剖面示意圖。如圖8A所示,先提供一基板800,此處,該基板800例如是一撓性基板(如聚亞醯胺基板),承載於載具80之上。基板800上形成有一阻氣層810(例如是SiOx層或SiNx層)並形成一光阻層802於於該阻氣層810之上。此處阻氣層810可以是多層不同阻氣材料堆疊而成的複合材料,也可以是單一材料層。阻氣層形成之技術內容可參考前述實施例。 8A-8D are schematic cross-sectional views showing respective steps of a method of fabricating a substrate having a lateral gas barrier structure according to an embodiment of the present disclosure. As shown in FIG. 8A, a substrate 800 is provided first. Here, the substrate 800 is, for example, a flexible substrate (such as a polyimide substrate) and is carried on the carrier 80. A gas barrier layer 810 (for example, an SiOx layer or a SiNx layer) is formed on the substrate 800 and a photoresist layer 802 is formed on the gas barrier layer 810. Here, the gas barrier layer 810 may be a composite material in which a plurality of layers of different gas barrier materials are stacked, or may be a single material layer. The technical content of the formation of the gas barrier layer can be referred to the foregoing embodiment.

圖8B所示,例如以微影蝕刻方式圖案化該光阻層802而形成一圖案化光阻層802a。參見圖8C,接著以圖案化光阻層802a為蝕刻罩幕,對阻氣層810進行蝕刻而圖案化阻氣層810,形成阻氣結構8100。如圖8D所示,形成另一基板804於基板800之上而將阻氣結構8100包裹於基板800與804之間。該基板804例如 是一撓性基板(如聚亞醯胺基板)。 As shown in FIG. 8B, the photoresist layer 802 is patterned, for example, by photolithography to form a patterned photoresist layer 802a. Referring to FIG. 8C, the gas barrier layer 810 is patterned by etching the photoresist layer 810 to form a gas barrier layer 810 to form a gas barrier structure 8100. As shown in FIG. 8D, another substrate 804 is formed over the substrate 800 to enclose the gas barrier structure 8100 between the substrates 800 and 804. The substrate 804 is for example It is a flexible substrate (such as a polyimide substrate).

圖9A-9E繪示本揭露實施例之利用具有側向阻氣結構基板構成之封裝結構的製造方法步驟之剖面示意圖。如圖9A所示,先提供一基板900,承載於載具90之上。基板900上形成有一阻氣層910(例如是SiOx層或SiNx層)、另一基板920與另一阻氣層930(例如是SiOx層或SiNx層),而另一基板920與另一阻氣層930具有多個溝渠S形成於其中。此處,該些基板900、920例如是一撓性基板(如聚亞醯胺基板),可以直接以塗佈再固化方式形成,該些阻氣層910、930可以是多層不同阻氣材料堆疊而成的複合材料,也可以是單一材料層。可利用微影蝕刻方式圖案化該基板920與該阻氣層930而形成該些溝渠S。舉例而言,可形成一光阻圖案(未圖示)在該阻氣層930上,以該光阻圖案為罩幕,蝕刻該阻氣層930與該基板920而形成多個溝渠S,而圖案化後形成有該些溝渠S的該阻氣層930可視為一阻氣結構。阻氣層形成之技術內容可參考前述實施例。該些微影、蝕刻步驟與製作方法乃為此領域之常見技術,故不於此贅述。 9A-9E are schematic cross-sectional views showing the steps of a method of fabricating a package structure having a lateral gas barrier structure substrate according to an embodiment of the present disclosure. As shown in FIG. 9A, a substrate 900 is first provided on the carrier 90. A gas barrier layer 910 (for example, an SiOx layer or a SiNx layer), another substrate 920 and another gas barrier layer 930 (for example, an SiOx layer or a SiNx layer) are formed on the substrate 900, and the other substrate 920 and another gas barrier are formed. Layer 930 has a plurality of trenches S formed therein. Here, the substrates 900, 920 are, for example, a flexible substrate (such as a polyimide substrate), which can be directly formed by coating and re-solidification. The gas barrier layers 910 and 930 can be stacked with different gas barrier materials. The composite material can also be a single material layer. The substrate 920 and the gas barrier layer 930 may be patterned by photolithography to form the trenches S. For example, a photoresist pattern (not shown) may be formed on the gas barrier layer 930, and the photoresist pattern is used as a mask to etch the gas barrier layer 930 and the substrate 920 to form a plurality of trenches S. The gas barrier layer 930 formed with the trenches S after patterning can be regarded as a gas barrier structure. The technical content of the formation of the gas barrier layer can be referred to the foregoing embodiment. The lithography, etching steps and fabrication methods are common techniques in the art and are therefore not described here.

參見圖9B,形成膠材9100,可部分或大致填滿該些溝渠S。後續更可包括形成一平坦層(未圖示)覆蓋於阻氣結構之最上方,達到平坦化之效果。接著,設置一電子元件950於基板920及阻氣層930之上(元件設置區內)。電子元件950例如是主動式環境敏感顯示元件,例如是主動式有機發光二極體(Active Matrix Organic Light Emitting Diode,AMOLED),或者是被動式環境敏感 電子元件顯示元件,例如是被動式有機發光二極體(Passive Matrix OLED,PM-OLED)。 Referring to Figure 9B, a glue 9100 is formed that partially or substantially fills the trenches S. The subsequent step may further include forming a flat layer (not shown) covering the uppermost portion of the gas barrier structure to achieve the effect of planarization. Next, an electronic component 950 is disposed over the substrate 920 and the gas barrier layer 930 (in the component mounting region). The electronic component 950 is, for example, an active environmentally sensitive display component, such as an Active Matrix Organic Light Emitting Diode (AMOLED), or a passive environmentally sensitive device. The electronic component display component is, for example, a passive organic light emitting diode (PM-OLED).

如圖9C,提供一上蓋板980,其具有側向阻氣結構9800突出於其表面980a上。上蓋板980例如是一撓性基板,而其阻氣結構9800乃是突出地形成於其表面980a上,其與前述實施例不同的是,阻氣結構9800並非內埋於上蓋板980內而是突出於上蓋板980表面,但除此之外,阻氣結構9800與其他結構相比差異不大,故其圖案結構、材料與形成技術內容均可參考前述實施例。此外,配置一膠材970於該上蓋板980上,其面積可約與該上蓋板980相同。 As shown in Figure 9C, an upper cover 980 is provided having a lateral gas barrier structure 9800 projecting from its surface 980a. The upper cover 980 is, for example, a flexible substrate, and the gas barrier structure 9800 is protrudedly formed on the surface 980a thereof. Unlike the foregoing embodiment, the gas barrier structure 9800 is not embedded in the upper cover 980. Rather, it protrudes from the surface of the upper cover 980, but otherwise, the gas barrier structure 9800 is not significantly different from other structures, so the pattern structure, material, and formation technique can be referred to the foregoing embodiments. In addition, a glue 970 is disposed on the upper cover 980, and the area thereof can be about the same as the upper cover 980.

圖9D所示,將上蓋板980與基板920對合,利用該膠材970將上蓋板980與基板920接著,而上蓋板980之突出的阻氣結構9800插入至基板920之膠材9100中,使電子元件950置於基板920與上蓋板980之間。 As shown in FIG. 9D, the upper cover 980 is mated with the substrate 920, the upper cover 980 is followed by the substrate 920 by the adhesive 970, and the protruding gas barrier structure 9800 of the upper cover 980 is inserted into the adhesive of the substrate 920. In 9100, electronic component 950 is placed between substrate 920 and upper cover 980.

接著,如圖9E所示,移除載具90。 Next, as shown in FIG. 9E, the carrier 90 is removed.

本揭露之電子元件封裝結構更可以電性連接至軟性電路板或印刷電路板。 The electronic component package structure of the present disclosure can be electrically connected to a flexible circuit board or a printed circuit board.

綜上所述,本揭露之電子元件封裝結構包括內埋式環繞元件設置區的立體阻隔結構,而電子元件設置於元件設置區中,由於阻隔結構可有效地阻擋水氣以及氧氣傳輸,因此可以有效地延長電子元件的壽命。此外,本揭露之電子元件封裝結構進一步透過搭配膠材與/或其他具有阻氣功能之軟性基板加強封裝結構周 邊部之阻氣能力,因此有效延伸或阻絕水氣以及氧氣進入位於元件設置區中的電子元件的傳輸路徑。如此一來,可有效地延長電子元件的壽命。 In summary, the electronic component package structure of the present disclosure includes a three-dimensional barrier structure of a buried surrounding component mounting region, and the electronic component is disposed in the component setting region, and the barrier structure can effectively block moisture and oxygen transmission, thereby Effectively extend the life of electronic components. In addition, the electronic component package structure of the present disclosure further strengthens the package structure week by matching a rubber material and/or other flexible substrate having a gas barrier function. The gas barrier capability of the edge thus effectively extends or blocks moisture and oxygen from entering the transmission path of the electronic component located in the component placement area. In this way, the life of the electronic component can be effectively extended.

雖然本揭露已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作些許之更動與潤飾,故本揭露之保護範圍當視後附之申請專利範圍所界定者為準。 The present disclosure has been disclosed in the above embodiments, but it is not intended to limit the disclosure, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the disclosure. The scope of protection of this disclosure is subject to the definition of the scope of the patent application.

10‧‧‧電子元件封裝結構 10‧‧‧Electronic component packaging structure

100‧‧‧第一基板 100‧‧‧First substrate

110‧‧‧膠材 110‧‧‧Stained materials

120‧‧‧第二基板 120‧‧‧second substrate

150‧‧‧電子元件 150‧‧‧Electronic components

1100‧‧‧阻氣結構 1100‧‧‧ gas barrier structure

Claims (30)

一種電子元件封裝結構,包括:第一基板具有第一表面與相對於該第一表面之第二表面;電子元件,配置於該第一基板之該第一表面上;膠材,配置於該第一基板上並覆蓋住該電子元件與該第一基板之該第一表面;以及第二基板,配置於該第一基板與該膠材上,其中該第二基板具有第三表面與相對於該第三表面之第四表面;其中至少該第一基板與該第二基板兩者之一具有阻氣結構內埋於該第一基板之中或該第二基板之中,而該第一基板與該第二基板以該膠材接著,使該電子元件與該阻氣結構位於該第一基板與該第二基板之間,該電子元件配置於該阻氣結構之上。 An electronic component package structure includes: a first substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the first substrate; a glue material disposed on the first surface a first substrate on the substrate and covering the first surface of the first substrate; and a second substrate disposed on the first substrate and the adhesive material, wherein the second substrate has a third surface and opposite to the a fourth surface of the third surface; wherein at least one of the first substrate and the second substrate has a gas barrier structure buried in the first substrate or the second substrate, and the first substrate is The second substrate is followed by the adhesive material, and the electronic component and the gas barrier structure are located between the first substrate and the second substrate, and the electronic component is disposed on the gas barrier structure. 如申請專利範圍第1項所述之電子元件封裝結構,更包括至少一功能基板位於該第一基板之該第二表面上,位於該電子元件之下與該第一基板之下,其中該功能基板是觸控功能基板、彩色濾光功能基板、色轉換功能基板或偏光功能基板。 The electronic component package structure of claim 1, further comprising at least one functional substrate on the second surface of the first substrate under the electronic component and below the first substrate, wherein the function The substrate is a touch function substrate, a color filter function substrate, a color conversion function substrate, or a polarizing function substrate. 如申請專利範圍第1項所述之電子元件封裝結構,更包括至少一功能基板位於該第一基板之該第一表面上,位於該電子元件之下與該第一基板之上,其中該功能基板是觸控功能基板、彩色濾光功能基板、色轉換功能基板或偏光功能基板。 The electronic component package structure of claim 1, further comprising at least one functional substrate on the first surface of the first substrate, under the electronic component and above the first substrate, wherein the function The substrate is a touch function substrate, a color filter function substrate, a color conversion function substrate, or a polarizing function substrate. 如申請專利範圍第1項所述之電子元件封裝結構,更包括至少一功能基板位於該第二基板之該第四表面上,位於該電子元 件之上、該膠材與該第二基板之間且位於第二基板之下,其中該功能基板是觸控功能基板、彩色濾光功能基板、色轉換功能基板或偏光功能基板。 The electronic component package structure of claim 1, further comprising at least one functional substrate on the fourth surface of the second substrate, located in the electronic component The functional substrate is a touch function substrate, a color filter function substrate, a color conversion function substrate or a polarizing function substrate. 如申請專利範圍第1項所述之電子元件封裝結構,更包括至少一功能基板位於該第二基板之該第三表面上,位於該電子元件與該膠材之上且位於該第二基板之上,其中該功能基板是觸控功能基板、彩色濾光功能基板、色轉換功能基板或偏光功能基板。 The electronic component package structure of claim 1, further comprising at least one functional substrate on the third surface of the second substrate, above the electronic component and the adhesive material, and located on the second substrate The functional substrate is a touch function substrate, a color filter function substrate, a color conversion function substrate or a polarizing function substrate. 如申請專利範圍第1項所述之電子元件封裝結構,其中該電子元件包括主動式有機發光二極體(OLED)元件或被動式有機發光二極體(OLED)元件。 The electronic component package structure of claim 1, wherein the electronic component comprises an active organic light emitting diode (OLED) component or a passive organic light emitting diode (OLED) component. 如申請專利範圍第1項所述之電子元件封裝結構,其中該第一基板或該第二基板是可撓性基板,且該第一基板或該第二基板的材質可選自聚乙烯對苯二甲酸酯(polyethylene terephthalate)、聚間苯二甲酸乙二酯(polyethylene naphthalate)、聚醚碸(polyethersulfone)、聚甲基丙烯酸甲酯(polymethyl methacrylate)、聚碳酸酯(polycarbonate)、聚亞醯胺(polyimide)或金屬箔(metal foil)。 The electronic component package structure of claim 1, wherein the first substrate or the second substrate is a flexible substrate, and the material of the first substrate or the second substrate is selected from the group consisting of polyethylene to benzene. Polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polymethyl methacrylate, polycarbonate, polyarylene Polyimide or metal foil. 如申請專利範圍第1項所述之電子元件封裝結構,其中該膠材的材質是壓克力樹脂(acrylic resin)、環氧樹脂或矽膠。 The electronic component package structure according to claim 1, wherein the material of the glue material is an acrylic resin, an epoxy resin or a silicone rubber. 如申請專利範圍第1項所述之電子元件封裝結構,其中該阻氣結構至少包括柔軟核心與相互交錯堆疊的至少一撓曲保護層與至少一柔軟層共形覆蓋於該柔軟核心之上所形成之立體結構, 該阻氣結構內埋於該第一基板與/或該第二基板之中。 The electronic component package structure of claim 1, wherein the gas barrier structure comprises at least a soft core and at least one flexural protective layer interleaved with each other and at least one soft layer conformally over the soft core. The three-dimensional structure formed, The gas barrier structure is buried in the first substrate and/or the second substrate. 如申請專利範圍第9項所述之電子元件封裝結構,其中該阻氣結構更包括至少一吸氣層與該撓曲保護層以及該柔軟層相互堆疊於該柔軟核心上。 The electronic component package structure of claim 9, wherein the gas barrier structure further comprises at least one gettering layer and the flexure protective layer and the soft layer are stacked on the soft core. 如申請專利範圍第9項所述之電子元件封裝結構,其中該柔軟核心或該柔軟層的材料是有機小分子材料(Small molecular materials)、有機寡聚合物(Oligomers)、有機-無機金屬共蒸鍍材料或無機金屬化合物材料。 The electronic component package structure according to claim 9, wherein the soft core or the soft layer material is a small molecular material, an organic oligomer (Oligomers), and an organic-inorganic metal co-steamed. Plating material or inorganic metal compound material. 如申請專利範圍第11項所述之電子元件封裝結構,其中所述有機小分子化合物可選自三(8-羥基喹啉)鋁(tris(8-hydroxyquinoline)-aluminum,Alq3)、N,N’-雙(萘-1-基)-N,N’-二苯基聯苯胺(N,N’-bis(naphthalene-1-y1)-N,N’-diphenyl-benzidine,NPB)或酞菁銅鹽(Phthalocyanine copper complex,CuPc)。 The electronic component encapsulation structure according to claim 11, wherein the organic small molecule compound is selected from the group consisting of tris (8-hydroxyquinoline-aluminum, Alq3), N, N. '-Bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (N,N'-bis(naphthalene-1-y1)-N,N'-diphenyl-benzidine, NPB) or phthalocyanine Copper salt (Phthalocyanine copper complex, CuPc). 如申請專利範圍第11項所述之電子元件封裝結構,其中所述有機寡聚合物是對苯乙烯寡聚物(Phenylene vinylene oligomers)或芴寡聚物(Fluorene oligomers)。 The electronic component encapsulation structure according to claim 11, wherein the organic oligopolymer is Phenylene vinylene oligomers or Fluorene oligomers. 如申請專利範圍第11項所述之電子元件封裝結構,其中所述有機-無機金屬共蒸鍍材料的分子量介於3g/mol至500g/mol之間。 The electronic component package structure according to claim 11, wherein the organic-inorganic metal co-evaporation material has a molecular weight of between 3 g/mol and 500 g/mol. 如申請專利範圍第11項所述之電子元件封裝結構,其中所述無機金屬化合物材料是Al2O3、AlN、BaTiO3、CeO2、Cr2O3、CuO、Dy2O3、Er2O3、Eu2O3、Ga2O3、GeO2、HfO2、Ho2O3、In2O3、 氧化銦錫(ITO)、PbTiO3、MgO、MnO2、Nd2O3、NiO、Nb2O5、Pr2O3、Sm2O3、SiO2、SiO、Ta2O5、ThO2、SnO2、TiO2、Y2O3、ZnO、ZrO2、CdTe、ZnTe、CdSe、CdS、ZnS、MoS2、BaF2、MgF2、CaF2Li、MgP、LiF、Li2O、CaO或MgO。 The electronic component package structure according to claim 11, wherein the inorganic metal compound material is Al 2 O 3 , AlN, BaTiO 3 , CeO 2 , Cr 2 O 3 , CuO, Dy 2 O 3 , Er 2 O 3 , Eu 2 O 3 , Ga 2 O 3 , GeO 2 , HfO 2 , Ho 2 O 3 , In 2 O 3 , indium tin oxide (ITO), PbTiO 3 , MgO, MnO 2 , Nd 2 O 3 , NiO , Nb 2 O 5 , Pr 2 O 3 , Sm 2 O 3 , SiO 2 , SiO, Ta 2 O 5 , ThO 2 , SnO 2 , TiO 2 , Y 2 O 3 , ZnO, ZrO 2 , CdTe, ZnTe, CdSe , CdS, ZnS, MoS 2 , BaF 2 , MgF 2 , CaF 2 Li, MgP, LiF, Li 2 O, CaO or MgO. 如申請專利範圍第9項所述之電子元件封裝結構,其中該撓曲保護層的材料可選自鋁、銀、鎂、鎂銀合金、鎂鋁合金、氧化銦錫(ITO)、氧化鋅鋁(AZO)、氧化鋅銦(IZO)、WO3、MoO3、SiOx、SiNx、SiOxNy或Al2O3The electronic component package structure of claim 9, wherein the material of the flexural protective layer is selected from the group consisting of aluminum, silver, magnesium, magnesium silver alloy, magnesium aluminum alloy, indium tin oxide (ITO), and zinc aluminum oxide. (AZO), indium zinc oxide (IZO), WO 3 , MoO 3 , SiOx, SiNx, SiOxNy or Al 2 O 3 . 如申請專利範圍第9項所述之電子元件封裝結構,其中該阻氣結構包括一連續的圖案連續地環繞該電子元件設置區設置。 The electronic component package structure of claim 9, wherein the gas barrier structure comprises a continuous pattern continuously disposed around the electronic component setting region. 如申請專利範圍第17項所述之電子元件封裝結構,其中該阻氣結構的圖案為框型圖案、曲線圖案或其組合。 The electronic component package structure of claim 17, wherein the pattern of the gas barrier structure is a frame pattern, a curved pattern or a combination thereof. 如申請專利範圍第9項所述之電子元件封裝結構,其中該阻氣結構的圖案為非連續的格狀圖案環繞該電子元件設置區設置或為非連續的格狀圖案設置分佈於該第一或第二基板。 The electronic component package structure of claim 9, wherein the pattern of the gas barrier structure is a discontinuous lattice pattern disposed around the electronic component setting region or disposed in a discontinuous lattice pattern. Or a second substrate. 一種製造電子元件封裝結構的方法,包括:提供一基板,承載在一載具上;形成多個溝渠於該基板中;形成一阻氣結構填滿該些第一溝渠;以及形成一電子元件於該阻氣結構之上。 A method of manufacturing an electronic component package structure, comprising: providing a substrate on a carrier; forming a plurality of trenches in the substrate; forming a gas barrier structure to fill the first trenches; and forming an electronic component Above the gas barrier structure. 如申請專利範圍第20項所述之製造電子元件封裝結構的方法,其中該些溝渠之深度為200~300微米,該些溝渠之間的間 隔介於200~300微米。 The method for manufacturing an electronic component package structure according to claim 20, wherein the trenches have a depth of 200 to 300 micrometers, and between the trenches The interval is between 200 and 300 microns. 如申請專利範圍第20項所述之製造電子元件封裝結構的方法,其中該基板是可撓性基板,且該基板的材質可選自聚乙烯對苯二甲酸酯(polyethylene terephthalate)、聚間苯二甲酸乙二酯(polyethylene naphthalate)、聚醚碸(polyethersulfone)、聚甲基丙烯酸甲酯(polymethyl methacrylate)、聚碳酸酯(polycarbonate)、聚亞醯胺(polyimide)或金屬箔(metal foil)。 The method of manufacturing an electronic component package structure according to claim 20, wherein the substrate is a flexible substrate, and the material of the substrate is selected from the group consisting of polyethylene terephthalate and poly. Polyethylene naphthalate, polyethersulfone, polymethyl methacrylate, polycarbonate, polyimide or metal foil . 如申請專利範圍第20項所述之製造電子元件封裝結構的方法,其中形成該阻氣結構填滿該些溝渠之步驟包括共形沈積至少一撓曲保護層、共形沈積至少一柔軟層與沈積形成一柔軟核心而形成該阻氣結構,故該阻氣結構包括該柔軟核心與相互交錯堆疊且共形包覆於該柔軟核心的該撓曲保護層與該柔軟層所形成之立體結構,而該阻氣結構內埋於該基板之該些溝渠中。 The method of manufacturing an electronic component package structure according to claim 20, wherein the step of forming the gas barrier structure to fill the trenches comprises conformally depositing at least one flexural protective layer, conformally depositing at least one soft layer and Depositing a soft core to form the gas barrier structure, so the gas barrier structure comprises a three-dimensional structure formed by the flexible core and the flexural protective layer and the soft layer which are mutually staggered and conformally coated on the soft core. The gas barrier structure is buried in the trenches of the substrate. 如申請專利範圍第23項所述之製造電子元件封裝結構的方法,其中形成該阻氣結構填滿該些溝渠之步驟更包括沈積至少一吸氣層,而與該撓曲保護層以及該柔軟層相互堆疊包覆該柔軟核心。 The method of manufacturing an electronic component package structure according to claim 23, wherein the step of forming the gas barrier structure to fill the trenches further comprises depositing at least one gettering layer, and the flexural protective layer and the soft The layers are stacked on top of each other to coat the soft core. 一種製造電子元件封裝結構的方法,包括:提供一第一基板,承載在一載具上;形成一第一阻氣層於該第一基板上;於該第一阻氣層形成多個溝渠並定義出一第一阻氣結構於該第一基板上; 形成一第二基板覆蓋該第一基板與該第一阻氣結構,該第二基板填滿該第一阻氣層之該些溝渠;以及形成一電子元件於該第一阻氣結構之上。 A method of manufacturing an electronic component package structure includes: providing a first substrate on a carrier; forming a first gas barrier layer on the first substrate; forming a plurality of trenches in the first gas barrier layer and Defining a first gas barrier structure on the first substrate; Forming a second substrate covering the first substrate and the first gas barrier structure, the second substrate filling the trenches of the first gas barrier layer; and forming an electronic component on the first gas barrier structure. 如申請專利範圍第25項所述之製造電子元件封裝結構的方法,其中於該阻氣層形成多個溝渠之步驟包括蝕刻穿透該第一阻氣層且移除部分該第一基板而形成該些溝渠於該第一基板中,該方法更包括:填充一第一膠材至該些溝渠中;設置該電子元件於該第一基板之上;提供一蓋板,具有一第二阻氣結構突出於該蓋板表面;配置一第二膠材於該蓋板上;將該第一基板與該蓋板接著,使該電子元件、該第一阻氣結構與該第二阻氣結構置於該蓋板與該第一基板之間。 The method of manufacturing an electronic component package structure according to claim 25, wherein the step of forming a plurality of trenches in the gas barrier layer comprises etching through the first gas barrier layer and removing a portion of the first substrate to form The trenches are disposed in the first substrate, the method further comprising: filling a first adhesive material into the trenches; disposing the electronic component on the first substrate; providing a cover plate having a second gas barrier The structure protrudes from the surface of the cover plate; a second adhesive material is disposed on the cover plate; the first substrate and the cover plate are followed by the electronic component, the first gas barrier structure and the second gas barrier structure Between the cover plate and the first substrate. 如申請專利範圍第26項所述之製造電子元件封裝結構的方法,其中該電子元件包括主動式有機發光二極體(OLED)元件或被動式有機發光二極體(OLED)元件。 The method of manufacturing an electronic component package structure according to claim 26, wherein the electronic component comprises an active organic light emitting diode (OLED) component or a passive organic light emitting diode (OLED) component. 如申請專利範圍第25項所述之製造電子元件封裝結構的方法,其中該第一基板或該第二基板是可撓性基板,且該第一基板或該第二基板的材質可選自聚乙烯對苯二甲酸酯(polyethylene terephthalate)、聚間苯二甲酸乙二酯(polyethylene naphthalate)、聚醚碸(polyethersulfone)、聚甲基丙烯酸甲酯(polymethyl methacrylate)、聚碳酸酯(polycarbonate)、聚亞醯胺(polyimide)或 金屬箔(metal foil)。 The method of manufacturing an electronic component package structure according to claim 25, wherein the first substrate or the second substrate is a flexible substrate, and the material of the first substrate or the second substrate is selected from the group consisting of Polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polymethyl methacrylate, polycarbonate, Polyimide or Metal foil. 如申請專利範圍第26項所述之製造電子元件封裝結構的方法,其中該第一或該第二膠材的材質是壓克力樹脂(acrylic resin)、環氧樹脂或矽膠。 The method of manufacturing an electronic component package structure according to claim 26, wherein the material of the first or second adhesive material is an acrylic resin, an epoxy resin or a silicone rubber. 如申請專利範圍第25項所述之製造電子元件封裝結構的方法,更包括一第三阻氣層位於該第一基板相對於該第一阻氣層的另一側。 The method of manufacturing an electronic component package structure according to claim 25, further comprising a third gas barrier layer on the other side of the first substrate relative to the first gas barrier layer.
TW102123263A 2012-12-22 2013-06-28 Electronic device package structure and manufacturing method thereof TWI532128B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/091,341 US9847512B2 (en) 2012-12-22 2013-11-27 Electronic device package structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261745549P 2012-12-22 2012-12-22

Publications (2)

Publication Number Publication Date
TW201426916A TW201426916A (en) 2014-07-01
TWI532128B true TWI532128B (en) 2016-05-01

Family

ID=51725661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102123263A TWI532128B (en) 2012-12-22 2013-06-28 Electronic device package structure and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI532128B (en)

Also Published As

Publication number Publication date
TW201426916A (en) 2014-07-01

Similar Documents

Publication Publication Date Title
US9847512B2 (en) Electronic device package structure and manufacturing method thereof
JP7203763B2 (en) DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
JP5335909B2 (en) Electroluminescent display device, lighting device or display device, and manufacturing process thereof
EP2143156B1 (en) Light-emitting device having improved light output and method of forming
TWI443784B (en) Package of environmental sensitive element and encapsulation method using the same
JP6110695B2 (en) Light emitting device
KR100662297B1 (en) Organic electroluminescence device
TWI578588B (en) Organic light emitting diode device and method for manufacturing the same
KR20050121691A (en) Light-emitting device and organic electroluminescence light-emitting device
JP2007536697A (en) Flexible electroluminescence device
JP5513917B2 (en) Light emitting device
TWI593152B (en) Substrate for organic electronic device
WO2005094134A1 (en) Organic electroluminescent device, process for fabricating the same and display
KR20220110683A (en) Flexible Electroluminescent Display Device
KR101671304B1 (en) Method for producing an optoelectronic assembly, and optoelectronic assembly
WO2013146350A1 (en) Light emitting apparatus and method for manufacturing light emitting apparatus
KR101961006B1 (en) Perovskite light emitting device
TWI532128B (en) Electronic device package structure and manufacturing method thereof
JP5991627B2 (en) Organic electroluminescence device
JP2011060720A (en) Organic electroluminescent display device
KR102293473B1 (en) Organic light emitting display device and method of manufacturing the same
KR20120139799A (en) Organic el device, method for manufacturing same, and organic photoelectric conversion device
JP2019102299A (en) Organic el element, organic el lighting device, organic el element light source and organic el display device
JP6816407B2 (en) An organic EL element, and a lighting device, a planar light source, and a display device including the organic EL element.
JP2019016478A (en) Organic el element, lighting device including the same, planar light source, and display device