TWI529828B - Apparatus and method for controlling movement of die bonding head - Google Patents

Apparatus and method for controlling movement of die bonding head Download PDF

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TWI529828B
TWI529828B TW100135494A TW100135494A TWI529828B TW I529828 B TWI529828 B TW I529828B TW 100135494 A TW100135494 A TW 100135494A TW 100135494 A TW100135494 A TW 100135494A TW I529828 B TWI529828 B TW I529828B
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die
axis
ball screw
unit
temperature
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TW201250881A (en
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金潤起
盧承進
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塔工程有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

調控晶粒黏接頭移動之裝置及方法Device and method for regulating movement of die bond joint

本發明係關於一種晶粒黏接機,特別係關於一種用於調控一種晶粒黏接機之一晶粒黏接頭之裝置及方法。The present invention relates to a die bonding machine, and more particularly to an apparatus and method for regulating a die bond joint of a die bonding machine.

一般而言,半導體之封裝製程如下:將一晶圓切割成數片半導體晶片;黏接半導體晶片(或稱晶粒)於一玻璃面板;藉由一導線將晶粒打線接合於玻璃基板的連接墊(connection pads);將晶粒本身及晶粒周圍以熱固性樹脂(thermosetting resin)進行封裝;在封裝用的熱塑性樹脂表面蓋印預期之字樣及圖案;分割玻璃基板以形成多個半導體封裝體。Generally, a semiconductor packaging process is as follows: cutting a wafer into a plurality of semiconductor wafers; bonding a semiconductor wafer (or a die) to a glass panel; and bonding the die to the connection pad of the glass substrate by a wire. (connection pads); encapsulating the die itself and the periphery of the die with a thermosetting resin; stamping the desired typeface and pattern on the surface of the thermoplastic resin for encapsulation; and dividing the glass substrate to form a plurality of semiconductor packages.

在上述半導體封裝製程之晶粒黏接操作中,晶圓在半導體製程會先經過幾種檢測裝置的精密檢測,晶圓上的晶粒中,只有符合標準的晶粒會被頂取(picked up)並承載到一輸送軌道(transport rail)上。輸送軌道是用以將玻璃面板(glass panels)移動至一晶粒黏接位置。因此,當每個晶粒要對應黏接到位於晶粒黏接位置上的玻璃基板時,晶粒黏接頭單元會將晶粒壓到玻璃面板上。In the die attach operation of the above semiconductor packaging process, the wafer is firstly subjected to precise detection by several detecting devices in the semiconductor process, and only the crystal grains conforming to the standard are picked up in the die on the wafer (picked up) And carried to a transport rail. The conveyor track is used to move the glass panels to a die attach position. Therefore, when each of the dies is bonded to the glass substrate at the die bonding position, the die bonding unit presses the dies onto the glass panel.

關於進行晶粒黏接之晶粒黏接機的相關作動方式,將另外於說明書中參照圖1描述。圖1係為一標準的晶粒黏接機之部分示意圖。如圖1所示,X軸方向係定義為一玻璃面板沿一輸送軌道輸送至一晶粒黏接位置的一方向,Z軸係定義為一晶粒黏接頭110上下移動之一垂直方向,以及Y軸係定義為晶粒黏接頭110介於輸送軌道及在另一位置上的一晶圓平台之間。The related operation mode of the die bonding machine for performing die bonding will be additionally described in the specification with reference to FIG. Figure 1 is a partial schematic view of a standard die bonder. As shown in FIG. 1 , the X-axis direction is defined as a direction in which a glass panel is transported along a transport track to a die bonding position, and the Z-axis is defined as a vertical direction in which a die bond 110 moves up and down, and The Y-axis is defined as a die bond 110 between the transfer track and a wafer platform at another location.

請參照圖1所示,晶粒黏接機100係用以將單一個晶粒黏接於相對應之一玻璃基板上。晶粒黏接機100係包括晶粒黏接頭(die bonding head)110,以及第一至第三輸送單元120、130及140,第一至第三輸送單元120、130及140係用以分別將晶粒黏接頭110沿X軸、Y軸及Z軸方向輸送。Referring to FIG. 1 , the die bonder 100 is used to bond a single die to a corresponding one of the glass substrates. The die bonding machine 100 includes a die bonding head 110, and first to third conveying units 120, 130, and 140, and the first to third conveying units 120, 130, and 140 are respectively used to The die bond joint 110 is conveyed in the X-axis, Y-axis, and Z-axis directions.

晶粒黏接頭110自位於晶圓平台的一晶圓上頂取一晶粒,輸送所頂取之晶粒至位於輸送軌道上的晶粒黏接位置,接著將晶粒黏接到由輸送軌道輸送的玻璃面板上。例如,晶粒黏接頭110包含一吸取單元(suction unit),以將晶粒自晶圓平台上吸取。吸取單元內具有一真空管線(vacuum line),藉由外界提供之真空力道吸住晶粒。然而,吸取單元並非本發明所要強調之技術特徵,因此,關於吸取單元的詳細說明及作動方式在此便不多做贅述。The die adhesion joint 110 takes a die from a wafer on the wafer platform, transports the topped die to the die bonding position on the transport track, and then bonds the die to the transport track. Conveyed on the glass panel. For example, the die attach joint 110 includes a suction unit to draw the die from the wafer platform. The suction unit has a vacuum line that sucks the die by a vacuum force provided by the outside. However, the suction unit is not a technical feature to be emphasized by the present invention. Therefore, the detailed description and operation mode of the suction unit will not be repeated here.

同時,晶粒黏接頭110必須能在晶圓平台上方沿垂直方向(Z軸)移動,以頂取晶圓上的晶粒,其亦能在輸送軌道上方沿垂直方向(Z軸)移動,以便將晶粒黏接於玻璃面板上。第一輸送單元120控制晶粒黏接頭110沿著垂直方向(Z軸)移動的作動。第一輸送單元120可透過一馬達150及一滾珠螺桿160的結合來實施。At the same time, the die bond 110 must be able to move vertically (Z-axis) above the wafer platform to pick up the die on the wafer, which can also move vertically (Z-axis) above the transport track so that The die is bonded to the glass panel. The first conveying unit 120 controls the movement of the die attaching joint 110 in the vertical direction (Z axis). The first conveying unit 120 can be implemented by a combination of a motor 150 and a ball screw 160.

此外,晶粒黏接頭110必須能在晶圓平台及輸送軌道之間來回移動以導引晶粒黏接之作動。針對這點,第二輸送單元130用以將晶粒黏接頭110自晶圓平台移動至輸送軌道或自輸送軌道移動至晶圓平台。第二輸送單元130可透過一馬達150及一滾珠螺桿160的結合來實施。第三輸送單元140用以在輸送軌道所處方向(X軸方向)上輸送晶粒黏接頭110。第三輸送單元140可透過一馬達150及一滾珠螺桿160的結合來實施。In addition, the die attach tab 110 must be able to move back and forth between the wafer platform and the transport track to guide the die bond actuation. In this regard, the second transport unit 130 is configured to move the die bond 110 from the wafer platform to the transport track or from the transport track to the wafer platform. The second transport unit 130 can be implemented by a combination of a motor 150 and a ball screw 160. The third conveying unit 140 is configured to convey the die bonding joint 110 in the direction in which the conveying rail is located (the X-axis direction). The third conveying unit 140 can be implemented by a combination of a motor 150 and a ball screw 160.

在具有如上所述之晶粒黏接機100中,晶粒黏接頭110透過馬達150及滾珠螺桿160在X軸、Y軸及Z軸方向上移動以導引晶粒黏接之作動。然而,馬達在高速驅動及經歷長時間作動的情況下,滾珠螺桿160會有變形的問題。詳細地來說,當晶粒黏接頭110在X軸、Y軸及Z軸方向上移動的一段時間後,每個滾珠螺桿160的溫度會逐漸升高而超過室溫。滾珠螺桿160增加的溫度會引起滾珠螺桿160的膨脹,因而造成晶粒頂取位置及晶粒黏接位置的改變。根據測試結果,當滾珠螺桿160作動一段時間後,晶粒黏接頭110在x、y座標上距正確的頂取或黏接位置係偏離20 μm至50 μm。如此一來,若因滾珠螺桿160的熱膨脹,而使得晶粒黏接頭110偏離正確的頂取或黏接位置20 μm至50 μm,則不能正常地完成頂取或黏接的作動。因此,必須提供一種方法係用以補償因滾珠螺桿160發生熱膨脹所造成的誤差。In the die bonding machine 100 as described above, the die bond 110 is moved in the X-axis, Y-axis, and Z-axis directions by the motor 150 and the ball screw 160 to guide the die bonding operation. However, in the case where the motor is driven at a high speed and subjected to a long time of operation, the ball screw 160 may be deformed. In detail, after a period of movement of the die attaching joint 110 in the X-axis, Y-axis, and Z-axis directions, the temperature of each of the ball screws 160 gradually rises above room temperature. The increased temperature of the ball screw 160 causes expansion of the ball screw 160, thereby causing a change in the die take-up position and die bond position. According to the test results, when the ball screw 160 is actuated for a period of time, the die attaching joint 110 is offset from the correct topping or bonding position by 20 μm to 50 μm on the x and y coordinates. As a result, if the die bond 110 is deviated from the correct pick-up or bonding position by 20 μm to 50 μm due to thermal expansion of the ball screw 160, the jacking or bonding operation cannot be performed normally. Therefore, a method must be provided to compensate for the error caused by the thermal expansion of the ball screw 160.

有鑑於上述習知技術中的問題,本發明之一目的係提供一裝置用以調控晶粒黏接機之晶粒黏接頭的移動,此晶粒黏接機中用以移動晶粒黏接頭之輸送單元因熱膨脹所造成頂取位置或黏接位置的偏離,經補償後可正確地完成頂取或黏接一晶粒之作動,同時也提供一方法搭配該裝置用以調控晶粒黏接頭的移動。In view of the above problems in the prior art, it is an object of the present invention to provide a device for regulating the movement of a die bond joint of a die bonder for moving a die bond joint. The deviation of the pick-up position or the bonding position caused by the thermal expansion of the conveying unit can be correctly completed by picking up or bonding a die, and a method is also provided for adjusting the die bond joint of the device. mobile.

本發明之另一目的係提供一裝置用以調控晶粒黏接頭,該裝置係能針對用以移動晶粒黏接頭的輸送單元因發生熱膨脹,而造成頂取位置或黏接位置的偏離立即進行補償,同時提供一方法係搭配該裝置調控晶粒黏接頭之移動。Another object of the present invention is to provide a device for regulating the die bond joint, which can directly deviate from the pick-up position or the adhesive position due to thermal expansion of the transport unit for moving the die bond joint. Compensation, while providing a method to adjust the movement of the die bond joint with the device.

為達成上述目的,在本發明一實施例中,提供一裝置係用以調控一晶粒黏接頭包括:至少一溫度感測單元,偵測複數輸送單元之複數溫度,複數輸送單元係分別在不同軸向上移動晶粒黏接頭;一補償單元,依溫度感測單元偵測到的溫度補償晶粒黏接頭之一位移;以及一輸送單元之驅動調控單元,係依補償單元計算的補償數值,調控輸送單元移動晶粒黏接頭至一正確的頂取位置或一黏接位置。In order to achieve the above object, in an embodiment of the invention, a device is provided for regulating a die bond joint, comprising: at least one temperature sensing unit, detecting a plurality of temperatures of the plurality of transport units, and the plurality of transport units are different Moving the die bond joint in the axial direction; a compensation unit compensates for the displacement of the die bond joint according to the temperature detected by the temperature sensing unit; and a drive control unit of the transport unit is adjusted according to the compensation value calculated by the compensation unit The conveying unit moves the die bond to a correct pick-up position or a bonding position.

在本發明另一實施例中,提供一裝置係用以調控晶粒黏接頭移動,包括:一晶圓平台,待頂取之一晶粒係置於晶圓平台上;一輸送軌道,其係於Y軸方向上與晶圓平台分別設置,其中輸送軌道係沿一X軸方向輸送晶粒至對應黏接之一玻璃面板,晶粒黏接頭自晶圓平台頂取晶粒,輸送被頂取之晶粒至位於輸送軌道上的一晶粒黏接位置,並將晶粒黏接至由輸送軌道輸送之玻璃面板上;一X軸滾珠螺桿,其在一方向上水平方向移動晶粒黏接頭,此方向係與輸送軌道之輸送玻璃面板之一輸送方向相同;一Y軸滾珠螺桿,其在一方向上水平方向移動晶粒黏接頭,且此方向係介於晶粒之一頂取位置及輸送軌道之間;一Z軸滾珠螺桿,其係垂直移動晶粒黏接頭;至少一溫度感測單元,偵測X軸滾珠螺桿、Y軸滾珠螺桿及Z軸滾珠螺桿至少其中之一之一溫度;一補償單元,依溫度感測單元測得之溫度,補償X軸滾珠螺桿、Y軸滾珠螺桿及Z軸滾珠螺桿至少其中之一之位移;一輸送單元之驅動調控單元,依補償單元計算之一補償數值調控X軸滾珠螺桿、Y軸滾珠螺桿及Z軸滾珠螺桿至少其中之一,以移動晶粒黏接單元至正確的一頂取位置或一黏接位置。In another embodiment of the present invention, a device is provided for regulating die bond joint movement, including: a wafer platform, one of which is to be topped on a wafer platform; and a transport track In the Y-axis direction, the wafer platform is separately disposed, wherein the transport track transports the die along an X-axis direction to a corresponding glass panel, and the die bond joint picks up the die from the wafer platform, and the transport is taken up. The die is bonded to a die on the transport track, and the die is bonded to the glass panel conveyed by the transport track; an X-axis ball screw moves the die bond in a horizontal direction in a direction, The direction is the same as the conveying direction of one of the conveying glass panels of the conveying track; a Y-axis ball screw, which moves the die bonding joint horizontally in one direction, and the direction is between the top picking position of the die and the conveying track a Z-axis ball screw, which is a vertical moving die bond joint; at least one temperature sensing unit detects a temperature of at least one of the X-axis ball screw, the Y-axis ball screw, and the Z-axis ball screw; Compensation unit The temperature measured by the sensing unit compensates for displacement of at least one of the X-axis ball screw, the Y-axis ball screw and the Z-axis ball screw; and the driving control unit of the conveying unit calculates one of the X-axis compensation values according to the compensation unit At least one of a ball screw, a Y-axis ball screw and a Z-axis ball screw to move the die bonding unit to a correct pick-up position or a bonding position.

在一實施例中,本發明係更提供一種用以控制一晶粒黏接機之晶粒黏接頭移動的方法,其中晶粒黏接機具有複數輸送單元用以沿一個以上的方向移動晶粒黏接頭,方法步驟係包括:即時偵測輸送單元之溫度;依所偵測之溫度決定一補償數值用以補償晶粒黏接頭之位移,以將晶粒黏接頭設置於正確的一頂取位置或一黏接位置;以及依據所決定之補償數值調控輸送單元之作動。In one embodiment, the present invention further provides a method for controlling the movement of a die bond joint of a die bonder, wherein the die bonder has a plurality of transfer units for moving the die in more than one direction The adhesive joint method includes: instantly detecting the temperature of the conveying unit; determining a compensation value according to the detected temperature to compensate the displacement of the die bonding joint to set the die bonding joint to the correct one of the topping positions Or a bonding position; and controlling the operation of the conveying unit according to the determined compensation value.

如上所述,在本發明用以調控一晶粒黏接頭的一裝置中,用以移動晶粒黏接頭之輸送單元的溫度能即時被偵測。當測得之溫度係介於使輸送單元熱膨脹之一範圍時,裝置將補償因熱膨脹所造成晶粒頂取或晶粒黏接位置的偏移。因此,可提升晶粒頂取及晶粒黏接作動的準確度。As described above, in a device for regulating a die bond joint of the present invention, the temperature of the transport unit for moving the die bond joint can be detected immediately. When the measured temperature is within a range that causes the thermal expansion of the transport unit, the device will compensate for the offset of the die lift or die bond position due to thermal expansion. Therefore, the accuracy of the die picking and die bonding operation can be improved.

再者,本發明中,針對熱膨脹造成晶粒黏接頭之晶粒頂取位置或晶粒黏接位置的偏移所提供的補償作動,係可藉由讀取補償數值即可達成,其中,補償數值係依所測得之溫度變換而來。如此,可快速補償晶粒頂取位置或晶粒黏接位置之偏移。Furthermore, in the present invention, the compensation operation provided by the thermal displacement caused by the offset of the die-carrying position or the die-bonding position of the die-bonding joint can be achieved by reading the compensation value, wherein the compensation is achieved. The values are based on the measured temperature changes. In this way, the offset of the die pick-up position or the die bond position can be quickly compensated.

以下將參照相關圖式,說明依本發明較佳實施例之一種調控晶粒黏接頭移動之裝置及方法,其中相同的元件將以相同的參照符號加以說明。其中,關於晶粒黏接頭之已知功能或結構之詳細說明並非本發明欲強調者,則將其省略。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a device and a method for regulating the movement of a die bond joint according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals. In the above, a detailed description of the known function or structure of the die-bonded joint is not intended to be emphasized by the present invention, and will be omitted.

圖2為依據本發明之一實施例中,一種用以調控晶粒黏接頭(die bonding head)移動之裝置(以下,將簡稱為「黏接頭移動調控裝置(head movement control apparatus)」)之系統方塊圖。黏接頭移動調控裝置之機械結構係如圖1所示。2 is a system for regulating the movement of a die bonding head (hereinafter, simply referred to as a "head movement control apparatus") according to an embodiment of the present invention. Block diagram. The mechanical structure of the adhesive joint movement control device is shown in Figure 1.

請參照如圖2所示,本發明之實施例中,黏接頭移動調控裝置係包括一晶粒黏接頭110以及第一至第三輸送單元120、130及140,第一至第三輸送單元120、130及140係用以沿X軸、Y軸及Z軸輸送晶粒黏接頭110。Referring to FIG. 2, in the embodiment of the present invention, the adhesive joint movement regulating device includes a die bonding joint 110 and first to third conveying units 120, 130 and 140, and first to third conveying units 120. , 130 and 140 are used to transport the die bond 110 along the X, Y and Z axes.

晶粒黏接頭110從放置在晶圓平台170上的晶圓中頂取一晶粒。隨後,晶粒黏接頭110再將頂取的晶粒輸送至位於一輸送軌道180的一晶粒黏接位置。然後,晶粒黏接頭110再把晶粒黏接至一經輸送軌道180輸送之玻璃面板190上。The die attach tab 110 takes a die from a wafer placed on the wafer platform 170. Subsequently, the die bond joint 110 transports the topped die to a die bond location on a transfer track 180. The die attach joint 110 then bonds the die to a glass panel 190 that is transported through the transport track 180.

舉例來說,晶圓平台170係一晶圓放置的位置,晶圓上具有待頂取的晶粒。晶圓平台170較佳地位於Y軸上,且其位置係不同於黏接頭移動調控裝置之主體位置。在一實施例中,晶圓平台170與黏接頭移動調控裝置整合。輸送軌道180也位於Y軸上異於晶圓平台170的一位置。輸送軌道180係用以在X軸方向上輸送晶粒所黏接的玻璃面板190。For example, the wafer platform 170 is a location where a wafer is placed, and the wafer has a die to be taken. Wafer platform 170 is preferably located on the Y-axis and is positioned differently than the body position of the adhesive joint movement control device. In one embodiment, the wafer platform 170 is integrated with the adhesive joint movement control device. The transport track 180 is also located at a location on the Y-axis that is different from the wafer platform 170. The transport track 180 is used to transport the glass panel 190 to which the die is bonded in the X-axis direction.

除此之外,晶粒黏接頭110必須在垂直方向上被輸送以頂取晶粒。再者,晶粒黏接頭110必須在垂直方向上被輸送以導引晶粒黏接之作動。第一輸送單元120負責在垂直方向上(Z軸方向)輸送晶粒黏接頭110。如圖1所示,第一輸送單元120係藉由一馬達150及一滾珠螺桿(ball screw)160之結合據以實施。In addition to this, the die bond 110 must be transported in the vertical direction to pick up the die. Furthermore, the die bond 110 must be transported in the vertical direction to guide the die bond. The first conveying unit 120 is responsible for conveying the die attaching joint 110 in the vertical direction (Z-axis direction). As shown in FIG. 1, the first transport unit 120 is implemented by a combination of a motor 150 and a ball screw 160.

此外,晶粒黏接頭110必須能夠在晶圓平台170及輸送軌道180間來回移動以導引晶粒黏接之作動。對此,第二輸送單元130用以在Y軸方向上,將晶粒黏接頭110自晶圓平台170輸送至輸送軌道180,或自輸送軌道180輸送至晶圓平台170。In addition, the die attach tab 110 must be able to move back and forth between the wafer platform 170 and the transport track 180 to guide the die bond actuation. In this regard, the second transport unit 130 is configured to transport the die bond 110 from the wafer platform 170 to the transport track 180 or from the transport track 180 to the wafer platform 170 in the Y-axis direction.

第二輸送單元130也可藉由一馬達150及一滾珠螺桿160之結合據以實施。當然,第三輸送單元140也可藉由一馬達及一滾珠螺桿之結合據以實施。第三輸送單元140用以在輸送軌道180所在之方向上(X軸方向)輸送晶粒黏接頭110。The second transport unit 130 can also be implemented by a combination of a motor 150 and a ball screw 160. Of course, the third conveying unit 140 can also be implemented by a combination of a motor and a ball screw. The third conveying unit 140 is configured to convey the die bonding joint 110 in the direction in which the conveying rail 180 is located (X-axis direction).

在本發明之一實施例中,如上所述之黏接頭移動調控裝置之結構更包含一個以上溫度感測單元200及210、一補償單元220及一輸送單元驅動調控單元(transport-unit-drive-control unit)230。溫度感測單元200及210係分別用以偵測第二及第三輸送單元130及140之溫度,而其中第二及第三輸送單元130及140係用以沿不同軸向(X軸及Y軸)上輸送晶粒黏接頭110。依據溫度感測單元200及210測得第二及第三輸送單元130及140之溫度,補償單元220補償晶粒黏接頭110之位移。輸送單元驅動調控單元230依據補償單元220所計算出來的補償數值,調控第一、第二及第三輸送單元120、130及140,以及移動晶粒黏接頭110至正確的一頂取位置或一黏接位置。In an embodiment of the invention, the structure of the adhesive joint movement control device as described above further comprises more than one temperature sensing unit 200 and 210, a compensation unit 220 and a transport unit drive control unit (transport-unit-drive- Control unit) 230. The temperature sensing units 200 and 210 are respectively configured to detect the temperatures of the second and third conveying units 130 and 140, wherein the second and third conveying units 130 and 140 are used along different axial directions (X-axis and Y). The die bond joint 110 is conveyed on the shaft. The compensation unit 220 compensates for the displacement of the die bonding joint 110 according to the temperature of the second and third conveying units 130 and 140 measured by the temperature sensing units 200 and 210. The conveying unit driving control unit 230 adjusts the first, second and third conveying units 120, 130 and 140 according to the compensation value calculated by the compensation unit 220, and moves the die bonding joint 110 to the correct one of the picking positions or Bonding position.

詳細地說,溫度感測單元200及210係分別進行即時偵測第二及第三輸送單元130及140之滾珠螺桿160之溫度。每個溫度感測單元200及210可藉由一紅外線溫度感測器據以實施,紅外線溫度感測器以非接觸的方式偵測所對應的滾珠螺桿160,或是,以熱電偶(thermocouple)透過接觸的方式偵測滾珠螺桿160的溫度。另外,由於每個輸送單元130及140之滾珠螺桿160係套設於一安裝單元(mounting unit),因此溫度感測單元200及210之配置能偵測到安裝單元的溫度,以補償晶粒黏接頭110的位移。In detail, the temperature sensing units 200 and 210 respectively detect the temperatures of the ball screws 160 of the second and third conveying units 130 and 140, respectively. Each of the temperature sensing units 200 and 210 can be implemented by an infrared temperature sensor that detects the corresponding ball screw 160 in a non-contact manner or by a thermocouple. The temperature of the ball screw 160 is detected by contact. In addition, since the ball screw 160 of each of the conveying units 130 and 140 is sleeved on a mounting unit, the temperature sensing units 200 and 210 can detect the temperature of the mounting unit to compensate the die adhesion. The displacement of the joint 110.

如圖2所示,雖然說明兩個溫度感測單元200及210係用以僅偵測第二及第三輸送單元130及140之滾珠螺桿160之溫度,但是,也可額外再設置一溫度感測單元,用以偵測第一輸送單元120之溫度。As shown in FIG. 2, although the two temperature sensing units 200 and 210 are used to detect only the temperature of the ball screw 160 of the second and third conveying units 130 and 140, an additional temperature sense can be set. The measuring unit is configured to detect the temperature of the first conveying unit 120.

除此之外,補償單元220包括記憶體(memory),當中儲存了用以轉換成位置補償數值,隨溫度感測單元200及210偵測的溫度,晶粒黏接頭110係基於補償數值在X軸及Y軸方向上移動。在一實施例之變化態樣中,補償單元220透過計算一參考溫度(reference temperature)(例如,室溫27℃)與溫度感測單元200及210測得之溫度間的差值,求得補償常數(compensation constants),補償常數再與基礎座標數據(base coordinate data)(x,y)相乘,最後得到補償數值(compensation values)。In addition, the compensation unit 220 includes a memory in which a value for converting to a position compensation value is detected, and the temperature of the temperature sensing unit 200 and 210 is detected, and the die bonding joint 110 is based on the compensation value at the X. Move in the direction of the axis and Y axis. In a variation of an embodiment, the compensation unit 220 obtains a compensation by calculating a difference between a reference temperature (eg, room temperature 27 ° C) and the temperature measured by the temperature sensing units 200 and 210. The compensation constants are multiplied by the base coordinate data (x, y) and finally the compensation values are obtained.

舉例來說,儲存於記憶體的位置補償數值係如下表所列。For example, the position compensation values stored in the memory are listed in the following table.

如上表列,可知,當測得滾珠螺桿為27℃時,不須對頂取位置及黏接位置進行補償。若測得滾珠螺桿為30℃時,針對頂取位置,將對應參考位置(x,y座標為(0,0)),在X軸上移動-15 μm,而在Y軸座標上移動-30 μm。如此一來,對應測得的溫度,就頂取位置及黏接位置所需抵銷的補償數值係被列表並儲存於記憶體中,藉由讀取對應所測溫度的補償數值並依據補償數值移動晶粒黏接頭110,可快速補償晶粒頂取位置及晶粒黏接位置的位移。As shown in the above table, it can be seen that when the ball screw is measured to be 27 ° C, it is not necessary to compensate for the topping position and the bonding position. If the measured ball screw is 30 °C, for the top take position, the corresponding reference position (x, y coordinate is (0,0)), -15 μm on the X axis, and -30 on the Y axis coordinate Mm. In this way, corresponding to the measured temperature, the compensation values required for the offset position and the bonding position are listed and stored in the memory, by reading the compensation value corresponding to the measured temperature and according to the compensation value. The moving die bond joint 110 can quickly compensate for the displacement of the die picking position and the die bonding position.

另一方面,補償數值之計算,係對應參考溫度(例如,室溫27℃)與由溫度感測單元200及210測得之溫度間的差值求得一補償常數,當補償常數係與基礎座標數據(x,y)相乘,能減少儲存之數據量,但必須分別將補償常數加至基礎座標數據,如此便增加了補償單元220之負荷。On the other hand, the calculation of the compensation value is to obtain a compensation constant corresponding to the difference between the reference temperature (for example, room temperature 27 ° C) and the temperature measured by the temperature sensing units 200 and 210, when the compensation constant is based on Multiplying the coordinate data (x, y) can reduce the amount of data stored, but the compensation constant must be added to the base coordinate data separately, thus increasing the load of the compensation unit 220.

請再參照上表,將其結論作圖後,頂取位置及黏接位置的x、y座標係隨每1℃做規律地變化。對此,頂取位置的基礎座標數據(x,y)係設定為(-5,-10),而黏接位置的基礎座標數據(x,y)係設定為(-2,-10)。接下來,參考溫度與溫度感測單元200及210測得的溫度之間的差值,對應為補償常數,補償常數再乘以預設的基礎座標數據,而得到欲抵銷的補償數值。Please refer to the above table again, and after drawing the conclusions, the x and y coordinate systems of the topping position and the bonding position will change regularly with every 1 °C. In this regard, the base coordinate data (x, y) of the pick-up position is set to (-5, -10), and the base coordinate data (x, y) of the sticking position is set to (-2, -10). Next, the difference between the temperature measured by the temperature and temperature sensing units 200 and 210 is referred to as a compensation constant, and the compensation constant is multiplied by the preset base coordinate data to obtain a compensation value to be offset.

具有上述結構之黏接頭移動調控裝置之相關作動將進一步參照圖3來說明。The related operation of the adhesive joint movement control device having the above structure will be further described with reference to FIG.

圖3為本發明一實施例之補償一晶粒黏接頭110之頂取位置及黏接位置之方法流程圖。FIG. 3 is a flow chart of a method for compensating a pick-up position and a bonding position of a die bond joint 110 according to an embodiment of the invention.

請參照圖3,假設黏接頭移動調控裝置在正常作動的情況下,晶圓平台170相對於晶粒黏接頭110係位於Y軸方向上,而藉由第二輸送單元130,晶粒黏接頭110係被移動至晶圓平台170上的頂取位置。頂取位置係為被儲存於輸送單元驅動調控單元230中之一預設值。當晶粒黏接頭110成功地移動至頂取位置後,晶粒黏接頭110被第一輸送單元120沿Z軸方向移動,亦即向下移動,然後頂取一晶粒,如步驟S10。Referring to FIG. 3, assuming that the adhesive joint movement regulating device is normally operated, the wafer platform 170 is located in the Y-axis direction with respect to the die bonding joint 110, and by the second conveying unit 130, the die bonding joint 110 The system is moved to a pick-up position on the wafer platform 170. The topping position is a preset value stored in the conveying unit driving regulation unit 230. After the die bond joint 110 is successfully moved to the jacking position, the die bond joint 110 is moved by the first transport unit 120 in the Z-axis direction, that is, moved downward, and then a die is taken up, as by step S10.

頂取晶粒的晶粒黏接頭110係再由第二輸送單元130移動至輸送軌道180上的黏接位置,輸送軌道180相對於晶粒黏接頭110大致上係設置在Y軸方向上。位於輸送軌道180上方的晶粒黏接頭110係與位於輸送軌道180上的玻璃面板190間隔一預設距離。當晶粒黏接頭110完全移動至輸送軌道180上的黏接位置後,晶粒黏接頭110係再透過第一輸送單元120向下移動一預設距離。如此,當晶粒黏接頭110向下移動一預設距離之後,即能透過一預設的壓力,將晶粒黏接至玻璃面板190上。The die bonding die 110 of the top picking die is further moved by the second conveying unit 130 to the bonding position on the conveying rail 180, and the conveying rail 180 is disposed substantially in the Y-axis direction with respect to the die bonding joint 110. The die attach tabs 110 above the transport track 180 are spaced a predetermined distance from the glass panel 190 on the transport track 180. After the die bonding joint 110 is completely moved to the bonding position on the conveying rail 180, the die bonding joint 110 is further moved downward by the first conveying unit 120 by a predetermined distance. Thus, after the die bond 110 is moved downward by a predetermined distance, the die can be bonded to the glass panel 190 through a predetermined pressure.

完成黏接作動的晶粒黏接頭110,之後再藉由第一輸送單元120及第二輸送單元130重複讓晶粒黏接頭110在垂直方向(Z軸方向)及水平方向(X軸方向及Y軸方向)上移動,重複進行相同的頂取及黏接作動。After the die-bonding die bonding joint 110 is completed, the die bonding joint 110 is repeatedly placed in the vertical direction (Z-axis direction) and the horizontal direction (X-axis direction and Y by the first conveying unit 120 and the second conveying unit 130). Move in the direction of the axis, repeat the same topping and bonding action.

在連續的將晶粒頂取及黏接之作動期間,第一、第二及第三輸送單元120、130及140會因熱膨脹而變形。The first, second, and third transfer units 120, 130, and 140 are deformed by thermal expansion during continuous actuation of the die and bonding.

為解決滾珠螺桿的變形問題,在本發明一實施例中,如步驟S14,溫度感測單元200及210即時偵測所對應的滾珠螺桿160。在晶粒頂取及黏接的作動期間,經由溫度感測單元200及210即時偵測得到滾珠螺桿160的溫度並將數據傳輸到補償單元220。如步驟S16,依據溫度感測單元200及210偵測滾珠螺桿160的溫度,使補償單元220決定一補償數值,以將晶粒黏接頭110定位在一正確的頂取位置或黏接位置,接著,將決定的補償數值傳輸到輸送單元驅動調控單元230。舉例來說,若溫度感測單元200測得第二輸送單元130的滾珠螺桿160溫度為30℃,則如表中所列,補償單元220讀取之頂取位置及黏接位置的補償數值為(-15/30)及(-6/30),並將這些補償數值傳送至輸送單元驅動調控單元230。In order to solve the problem of the deformation of the ball screw, in an embodiment of the invention, in step S14, the temperature sensing units 200 and 210 immediately detect the corresponding ball screw 160. During the operation of the die topping and bonding, the temperature of the ball screw 160 is immediately detected via the temperature sensing units 200 and 210 and the data is transmitted to the compensation unit 220. In step S16, the temperature of the ball screw 160 is detected according to the temperature sensing units 200 and 210, so that the compensation unit 220 determines a compensation value to position the die bonding joint 110 at a correct jacking position or bonding position, and then The determined compensation value is transmitted to the transport unit drive regulation unit 230. For example, if the temperature sensing unit 200 measures that the temperature of the ball screw 160 of the second conveying unit 130 is 30 ° C, as shown in the table, the compensation value of the picking position and the bonding position read by the compensation unit 220 is (-15/30) and (-6/30), and these compensation values are transmitted to the transport unit drive regulation unit 230.

接著,如步驟S18,輸送單元驅動調控單元230決定晶粒黏接頭110當下係執行晶粒頂取作動或晶粒黏接作動,依據決定結果選擇補償數值為(-15/30)或(-6/-30),再根據所選擇的補償數值來補償晶粒黏接頭110的位置。Next, in step S18, the transport unit driving control unit 230 determines that the die attaching joint 110 performs the die topping action or the die attaching action, and selects the compensation value as (-15/30) or (-6) according to the determination result. /-30), and then compensate the position of the die bond joint 110 according to the selected compensation value.

舉例來說,若晶粒黏接頭110要執行的是晶粒頂取作動,則輸送單元驅動調控單元230自所接收的補償數值中,選擇用於補償頂取位置的補償數值(-15/-30)。之後,輸送單元驅動調控單元230調控第二輸送單元130及第三輸送單元140,使得晶粒黏接頭110自預設的頂取點(0,0)抵銷補償數值(-15/-30)後移動到另一點。For example, if the die bonding joint 110 is to perform the die topping operation, the conveying unit driving control unit 230 selects the compensation value for compensating the topping position from the received compensation value (-15/- 30). Thereafter, the transport unit driving control unit 230 regulates the second transport unit 130 and the third transport unit 140 such that the die attaching joint 110 offsets the compensation value (-15/-30) from the preset top take-off point (0, 0). Move to another point later.

如此一來,當補償了晶粒頂取位置或晶粒黏接位置後,由第二及第三輸送單元130及140之滾珠螺桿160因熱膨脹所造成的問題,也就是,晶粒頂取或黏接作動發生誤差的問題,能夠獲得顯著地改善。例如,當本發明之實施例中之裝置運作時,晶粒頂取步驟S10、晶粒黏接步驟S12、即時偵測溫度步驟S14、決定位置補償數值步驟S16以及位置補償步驟S18係反覆地被執行。In this way, when the die pick-up position or the die bonding position is compensated, the ball screw 160 of the second and third conveying units 130 and 140 is caused by thermal expansion, that is, the die picking or The problem of the error in the adhesion actuation can be significantly improved. For example, when the device in the embodiment of the present invention is in operation, the die topping step S10, the die bonding step S12, the instantaneous temperature detecting step S14, the determining position compensation value step S16, and the position compensation step S18 are repeatedly carried out.

承上所述,在本發明之一種用以調控晶粒黏接頭移動之裝置中,即時偵測負責移動晶粒黏接頭之輸送單元的溫度。當測得之溫度介於使輸送單元熱膨脹之範圍內,黏接頭移動調控裝置會補償由熱膨脹所造成的晶粒頂取位置及晶粒黏接位置的偏移。因此,能增進晶粒頂取作動及晶粒黏接作動之準確度。As described above, in the apparatus for regulating the movement of the die bond joint of the present invention, the temperature of the transport unit responsible for moving the die bond joint is detected instantaneously. When the measured temperature is within the range of thermal expansion of the conveying unit, the adhesive joint movement control device compensates for the deviation of the crystal picking position and the grain bonding position caused by thermal expansion. Therefore, the accuracy of the die topping operation and the die bonding operation can be improved.

除此之外,在本發明中,補償由熱膨脹造成晶粒黏接頭的晶粒頂取位置或晶粒黏接位置的偏移,可以透過讀取對應測得溫度轉變而來之補償數值來據以實施。因此,晶粒頂取位置或晶粒黏接位置可以快速地獲得補償。In addition, in the present invention, compensation for the offset of the grain pick-up position or the die-bonding position of the die-bonded joint caused by thermal expansion can be obtained by reading the compensation value corresponding to the measured temperature transition. To implement. Therefore, the die pick-up position or the die bond position can be quickly compensated.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.

100...晶粒黏接機100. . . Die bonding machine

110‧‧‧晶粒黏接頭 110‧‧‧ die bonded joint

120‧‧‧第一輸送單元 120‧‧‧First conveyor unit

130‧‧‧第二輸送單元 130‧‧‧Second transport unit

140‧‧‧第三輸送單元 140‧‧‧ Third transport unit

150‧‧‧馬達 150‧‧‧Motor

160‧‧‧滾珠螺桿 160‧‧‧Ball screw

170‧‧‧晶圓平台 170‧‧‧ Wafer Platform

180‧‧‧輸送軌道 180‧‧‧Transportation track

190‧‧‧玻璃面板 190‧‧‧glass panel

200、210‧‧‧溫度感測單元 200, 210‧‧‧ Temperature Sensing Unit

220‧‧‧補償單元 220‧‧‧Compensation unit

230‧‧‧輸送單元驅動調控單元 230‧‧‧Conveyor unit drive control unit

S10~S20‧‧‧步驟S10~S20‧‧‧Steps

圖1為一標準的晶粒黏接機之部分示意圖;Figure 1 is a partial schematic view of a standard die bonding machine;

圖2為本發明一實施例之一種調控晶粒黏接頭之裝置的系統方塊圖;以及2 is a system block diagram of an apparatus for regulating a die bond joint according to an embodiment of the present invention;

圖3為本發明之一實施例之一種用以補償晶粒黏接頭之頂取位置及黏接位置之方法的一實施例之流程圖。3 is a flow chart of an embodiment of a method for compensating for a pick-up position and a bonding position of a die bond joint according to an embodiment of the invention.

110...晶粒黏接頭110. . . Die bonding joint

120...第一輸送單元120. . . First conveying unit

130...第二輸送單元130. . . Second conveying unit

140...第三輸送單元140. . . Third conveying unit

170...晶圓平台170. . . Wafer platform

180...輸送軌道180. . . Transport track

190...玻璃面板190. . . Glass panel

200、210...溫度感測單元200, 210. . . Temperature sensing unit

220...補償單元220. . . Compensation unit

230...輸送單元驅動調控單元230. . . Conveyor unit drive control unit

Claims (9)

一種用於調控一晶粒黏接頭移動之裝置,包括:至少一溫度感測單元,偵測複數輸送單元,該等輸送單元係相對於該晶粒黏接頭在不同軸向上移動,其中該等輸送單元係分別包括一馬達及一滾珠螺桿,且該溫度感測單元偵測該滾珠螺桿之一溫度,該滾珠螺桿沿一X軸、Y軸及Z軸其中之一方向上移動該晶粒黏接頭;一補償單元,依該溫度感測單元偵測的該等溫度,該補償單元補償該晶粒黏接頭之一位移;以及一輸送單元驅動調控單元,依該補償單元計算之一補償數值調控該輸送單元移動該晶粒黏接頭至正確的一頂取位置或一黏接位置。 The device for regulating the movement of a die bond joint comprises: at least one temperature sensing unit detecting a plurality of transport units, wherein the transport units move in different axial directions with respect to the die bond joint, wherein the transport The unit includes a motor and a ball screw, and the temperature sensing unit detects a temperature of the ball screw, and the ball screw moves the die bond joint in one of an X axis, a Y axis and a Z axis; a compensation unit that compensates for the displacement of the die bond joint according to the temperature detected by the temperature sensing unit; and a transport unit drive control unit that calculates the compensation value according to the compensation unit The unit moves the die bond to the correct pick-up position or a bond position. 如申請專利範圍第1項所述之裝置,其中該晶粒黏接頭係設置於一晶粒黏接機,該晶粒黏接機係頂取一晶粒並將該晶粒安裝於位於一輸送軌道之一玻璃面板,該裝置係更包括:一X軸滾珠螺桿,其在一方向上水平方向移動該晶粒黏接頭,該方向係與該玻璃面板沿該輸送軌道之一輸送方向相同;一Y軸滾珠螺桿,其在一方向上水平方向移動該晶粒黏接頭,該方向係介於該晶粒之一頂取位置及該輸送軌道之間;一Z軸滾珠螺桿,其係垂直移動該晶粒黏接頭;以及 該溫度感測單元係偵測該Y軸滾珠螺桿之一溫度。 The device of claim 1, wherein the die bond is disposed in a die bonder, the die bonder picks up a die and mounts the die on a transport a glass panel of a track, the apparatus further comprising: an X-axis ball screw that moves the die bond joint horizontally in one direction, the direction being the same as the direction of transport of the glass panel along one of the transport tracks; a shaft ball screw that moves the die bond in a horizontal direction in a direction between a picking position of the die and the transport track; a Z-axis ball screw that vertically moves the die Adhesive joint; The temperature sensing unit detects a temperature of the Y-axis ball screw. 如申請專利範圍第1項所述之裝置,其中該補償單元包括一記憶體,該記憶體中之複數補償數值係對應測得之複數溫度,該等補償數值係依該等溫度轉換,使該晶粒黏接頭沿該X軸方向及該Y軸方向移動。 The device of claim 1, wherein the compensation unit comprises a memory, and the complex compensation value in the memory corresponds to the measured complex temperature, and the compensation values are converted according to the temperature, so that The die bond joint moves in the X-axis direction and the Y-axis direction. 一種用於調控一晶粒黏接頭移動之裝置,包括:一晶圓平台,待頂取之一晶粒係置於該晶圓平台;一輸送軌道,其係於一Y軸方向上與該晶圓平台分開設置,該輸送軌道沿一X軸方向輸送該晶粒所黏接之一玻璃面板,該晶粒黏接頭自該晶圓平台頂取該晶粒,輸送被頂取之該晶粒至位於該輸送軌道之一晶粒黏接位置,且該晶粒黏接至由該輸送軌道輸送之該玻璃面板;一X軸滾珠螺桿,其在一方向上水平方向移動該晶粒黏接頭,該方向係與該玻璃面板沿該輸送軌道之一輸送方向相同;一Y軸滾珠螺桿,其在該晶圓平台及該輸送軌道之間水平移動該晶粒黏接頭;一Z軸滾珠螺桿,其係垂直移動該晶粒黏接頭;至少一溫度感測單元,偵測該X軸滾珠螺桿、該Y軸滾珠螺桿及該Z軸滾珠螺桿至少其中之一之一溫度;一補償單元,依該溫度感測單元測得之該溫度,該補償單元補償該X軸滾珠螺桿、該Y軸滾珠螺桿及該Z軸滾珠螺桿至少其中之一之一位移;以及 一輸送單元之驅動調控單元,依該補償單元計算之一補償數值調控該X軸滾珠螺桿、該Y軸滾珠螺桿及該Z軸滾珠螺桿至少其中之一,以移動該晶粒黏接單元至正確的一頂取位置或一黏接位置。 A device for regulating movement of a die bond joint includes: a wafer platform on which a die is to be placed on the wafer platform; and a transport track coupled to the Y-axis direction and the crystal The circular platform is separately disposed, and the conveying track conveys a glass panel bonded to the die along an X-axis direction, the die bonding joint takes the die from the wafer platform, and conveys the die that is taken up to Located in a die bonding position of the conveying track, and the die is bonded to the glass panel conveyed by the conveying track; an X-axis ball screw that moves the die bonding joint horizontally in one direction, the direction And the glass panel is transported in the same direction along one of the transport rails; a Y-axis ball screw that horizontally moves the die bond joint between the wafer platform and the transport track; a Z-axis ball screw, which is vertical Moving the die bond joint; at least one temperature sensing unit detecting a temperature of at least one of the X-axis ball screw, the Y-axis ball screw, and the Z-axis ball screw; and a compensation unit sensing the temperature The temperature measured by the unit, the compensation The compensation element X axis ball screw, the ball screw and the Y-axis of the Z-axis ball screw displacement of one of at least one; and a driving control unit of the conveying unit, wherein the compensation unit calculates a compensation value to adjust at least one of the X-axis ball screw, the Y-axis ball screw and the Z-axis ball screw to move the die bonding unit to the correct one A top picking position or a bonding position. 如申請專利範圍第4項所述之裝置,其中該溫度感測單元偵測該Y軸滾珠螺桿之一溫度。 The device of claim 4, wherein the temperature sensing unit detects a temperature of the Y-axis ball screw. 如申請專利範圍第5項所述之裝置,其中該Y軸滾珠螺桿係藉由一安裝單元設置於該裝置之一主體,以及該溫度感測單元偵測該安裝單元之一溫度。 The device of claim 5, wherein the Y-axis ball screw is disposed on a body of the device by a mounting unit, and the temperature sensing unit detects a temperature of the mounting unit. 一種用於控制一晶粒黏接機之一晶粒黏接頭之方法,其中該晶粒黏接機具有複數輸送單元用以沿一個方向以上移動該晶粒黏接頭,其中該等輸送單元係分別包括一馬達及一滾珠螺桿,該方法包括:即時偵測各該輸送單元之該滾珠螺桿之一溫度;依所偵測之該等溫度決定一補償數值用以補償該晶粒黏接頭之一位置,以將該晶粒黏接頭設置於正確的一頂取位置或一黏接位置,且該滾珠螺桿沿一X軸、Y軸及Z軸其中之一方向上移動該晶粒黏接頭;以及依據所決定之該補償數值調控該輸送單元之作動。 A method for controlling a die bonding joint of a die bonding machine, wherein the die bonding machine has a plurality of conveying units for moving the die bonding joints in one direction or more, wherein the conveying units are respectively The method includes: detecting a temperature of one of the ball screws of each of the conveying units; determining a compensation value according to the detected temperatures to compensate a position of the die bonding joint Positioning the die bonder in a correct pick-up position or a bonding position, and moving the die screw in one of an X-axis, a Y-axis, and a Z-axis; and The compensation value determined determines the actuation of the conveyor unit. 如申請專利範圍第7項所述之方法,其中該決定該補償數值係包括讀取一記憶體中對應測得之該等溫度之該補償數值,該記憶體中之該補償數值係對應該等溫度轉換,使該晶粒黏接頭沿該X軸及該Y軸方向移動。 The method of claim 7, wherein the determining the compensation value comprises reading the compensation value corresponding to the measured temperature in a memory, and the compensation value in the memory is corresponding. The temperature conversion causes the die bond joint to move along the X axis and the Y axis. 如申請專利範圍第7項所述之方法,其中該決定該補償數值係包括計算該補償數值,其係一參考溫度及該等溫度間的複數差值對應複數補償常數,將該等補償常數乘以基礎座標數據(x,y)。The method of claim 7, wherein the determining the compensation value comprises calculating the compensation value, wherein the reference temperature and the complex difference between the temperatures correspond to a complex compensation constant, and the compensation constants are multiplied Take the base coordinate data (x, y).
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