TWI528431B - Laser processing method - Google Patents

Laser processing method Download PDF

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Publication number
TWI528431B
TWI528431B TW101100600A TW101100600A TWI528431B TW I528431 B TWI528431 B TW I528431B TW 101100600 A TW101100600 A TW 101100600A TW 101100600 A TW101100600 A TW 101100600A TW I528431 B TWI528431 B TW I528431B
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cut
modified region
line
sic substrate
laser light
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TW101100600A
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Chinese (zh)
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TW201243925A (en
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Junji Okuma
Takeshi Sakamoto
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Hamamatsu Photonics Kk
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Description

雷射加工方法 Laser processing method
本發明係關於用來將具備SiC基板之板狀的加工對象物沿著切斷預定線進行切斷之雷射加工方法。 The present invention relates to a laser processing method for cutting a plate-shaped object to be processed having a SiC substrate along a line to cut.
SiC(碳化矽),是作為能夠製造耐熱性、耐高電壓性、省電力性優異的功率元件之半導體材料而受到注目。然而,由於SiC是硬度僅次於鑽石之難加工材料,若想將具備SiC基板之板狀的加工對象物藉由刀片切割進行切斷,必須進行低速加工且頻繁地更換刀片。於是,藉由對加工對象物照射雷射光,沿著切斷預定線在SiC基板的內部形成改質區域,以該改質區域為起點而沿著切斷預定線將加工對象物進行切斷之雷射加工方法已被提出(例如參照專利文獻1)。 SiC (cerium carbide) is attracting attention as a semiconductor material capable of producing a power element excellent in heat resistance, high voltage resistance, and power saving. However, since SiC is a hard-to-machine material that is second only to diamonds in hardness, it is necessary to perform low-speed processing and frequently replace the blades if the object to be processed having a plate shape including a SiC substrate is cut by a blade. Then, by irradiating the object with the laser light, a modified region is formed inside the SiC substrate along the line to cut, and the object to be processed is cut along the line to cut with the modified region as a starting point. A laser processing method has been proposed (for example, refer to Patent Document 1).
[專利文獻] [Patent Literature]
[專利文獻1]日本特表2007-514315號公報 [Patent Document 1] Japanese Patent Publication No. 2007-514315
然而,藉由上述雷射加工方法,要將具備六方晶系SiC基板(具有與與c面形成偏離角度的主面)之板狀的加工對象物予以切斷的情況,本發明人等發現存在著以下的課題。亦即,若沿著朝與主面及a面平行的方向延伸之 第1切斷預定線而在SiC基板內部形成第1改質區域,且沿著朝與主面及m面平行的方向延伸之第2切斷預定線在SiC基板內部形成第2改質區域時,沿第1切斷預定線之切斷精度可能會比沿第2切斷預定線之切斷精度更差。本發明人等探究的結果得知,這是起因於:龜裂容易從第2改質區域朝SiC基板的厚度方向伸展,但龜裂不容易從第1改質區域朝SiC基板的厚度方向伸展。 However, in the above-described laser processing method, the inventors have found that a plate-shaped object to be processed having a hexagonal SiC substrate (having a main surface deviated from the c-plane) is cut. The following topics are concerned. That is, if extending in a direction parallel to the main surface and the a surface The first modified region is formed in the SiC substrate, and the second modified region is formed in the SiC substrate along the second planned cutting line extending in the direction parallel to the main surface and the m-plane. The cutting accuracy along the first cutting planned line may be worse than the cutting accuracy along the second cutting planned line. As a result of investigation by the inventors of the present invention, it is found that the crack easily spreads from the second modified region toward the thickness direction of the SiC substrate, but the crack does not easily extend from the first modified region toward the thickness of the SiC substrate. .
於是,本發明的目的是為了提供一種雷射加工方法,其能夠將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物沿著切斷預定線予以高精度地切斷。 Accordingly, an object of the present invention is to provide a laser processing method capable of providing a plate-shaped object to be processed having a hexagonal SiC substrate (having a main surface deviated from the c-plane) along a line to be cut. Cut off with high precision.
本發明的一觀點之雷射加工方法,是將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物,分別沿著朝與主面及a面平行的方向延伸之第1切斷預定線以及朝與主面及m面平行的方向延伸之第2切斷預定線進行切斷之雷射加工方法;該雷射加工方法具備第1步驟及第2步驟;該第1步驟,是讓雷射光的聚光點對準SiC基板的內部,沿著第1切斷預定線將雷射光照射於加工對象物,藉此沿著第1切斷預定線將作為切斷起點之第1改質區域形成於SiC基板的內部,以沿SiC基板的厚度方向排列的方式對於1條第1切斷預定線形成複數列的第1改質區域;該第2步驟,是讓聚光點對準SiC基板的內部,沿著第2切斷預定線將雷射光照射於加工對象物,藉此沿著第2切斷預定線將作為切斷起點之第2改質 區域形成於SiC基板的內部,以沿SiC基板的厚度方向排列的方式對於1條第2切斷預定線形成複數列的第2改質區域;在第1步驟,是以離SiC基板之雷射光入射面第2近的第1改質區域比離雷射光入射面最近的第1改質區域更小的方式,依離雷射光入射面從遠到近的順序形成第1改質區域;在第2步驟,是以離雷射光入射面最近的第2改質區域比離雷射光入射面第2近的第2改質區域更小的方式,依離雷射光入射面從遠到近的順序形成第2改質區域。 A laser processing method according to a point of view of the present invention is a plate-shaped object to be processed having a hexagonal SiC substrate (having a main surface deviated from the c-plane), and is parallel to the main surface and the a-plane A laser processing method for cutting a first cutting planned line and a second cutting planned line extending in a direction parallel to the main surface and the m-plane; the laser processing method includes the first step and the second step In the first step, the condensing point of the laser light is aligned with the inside of the SiC substrate, and the laser beam is irradiated onto the object to be processed along the first line to cut, thereby along the first line to cut. The first modified region as the cutting start point is formed inside the SiC substrate, and a plurality of first modified regions are formed in a plurality of first planned cutting lines so as to be aligned in the thickness direction of the SiC substrate. The second step By aligning the condensed spot with the inside of the SiC substrate, the laser beam is irradiated onto the object to be processed along the second line to cut, whereby the second modification is used as the cutting start point along the second line to cut. The region is formed inside the SiC substrate, and a plurality of second modified regions are formed in a plurality of second planned cutting lines so as to be aligned in the thickness direction of the SiC substrate. In the first step, the laser light is separated from the SiC substrate. The first modified region having the second closest incident region is smaller than the first modified region closest to the incident surface of the laser light, and the first modified region is formed from the far side to the near the laser light incident surface; In the second step, the second modified region closest to the incident surface of the laser light is smaller than the second modified region which is closer to the second incident surface of the laser light, and is formed in a sequence from the far side to the near incident surface of the laser light. The second modified area.
在該雷射加工方法,沿著第1切斷預定線,是使離雷射光入射面第2近的第1改質區域形成相對較小。如此,即使a面相對於SiC基板的厚度方向形成傾斜,仍能防止離雷射光入射面第2近的第1改質區域所發生的龜裂朝a面方向伸展,而能避免以大幅偏離第1切斷預定線的狀態到達雷射光入射面。而且,沿著第1切斷預定線,是使離雷射光入射面最近的第1改質區域形成相對較大。如此,雖然變成龜裂不容易從第1改質區域朝SiC基板的厚度方向伸展的狀態,但能確實地讓龜裂從離雷射光入射面最近的第1改質區域到達雷射光入射面。此外,沿著第2切斷預定線,使離雷射光入射面第2近的第2改質區域形成相對較大。如此,變成龜裂容易從第2改質區域朝SiC基板的厚度方向伸展的狀態,並且能讓離雷射光入射面第2近的第2改質區域所發生的龜裂到達雷射光入射面或其附近。而且,沿著第2切斷預定線,讓離雷射光入射面最近的 第2改質區域形成相對較小。如此,可防止在雷射光入射面發生損傷,並能確實地讓龜裂從第2改質區域到達雷射光入射面。如以上所述般,沿著第1切斷預定線,能確實地讓龜裂從第1改質區域到達雷射光入射面,此外,沿著第2切斷預定線,能確實地讓龜裂從第2改質區域到達雷射光入射面。因此,依據此雷射加工方法,能夠將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物沿著切斷預定線予以高精度地切斷。又偏離角是包含0°的情況。在此情況,主面是與c面平行。此外,可在第1步驟之後實施第2步驟,亦可在第2步驟之後實施第1步驟。 In the laser processing method, the first modified region which is second closest to the incident surface of the laser light is formed relatively small along the first planned cutting line. In this manner, even if the a-plane is inclined with respect to the thickness direction of the SiC substrate, it is possible to prevent the crack generated in the first modified region which is closest to the incident surface of the laser light from extending in the a-plane direction, and it is possible to avoid a large deviation from the first one. The state of cutting the predetermined line reaches the laser light incident surface. Further, along the first planned cutting line, the first modified region closest to the incident surface of the laser light is relatively large. In this manner, the crack does not easily extend from the first modified region toward the thickness direction of the SiC substrate, but the crack can be surely made to reach the laser light incident surface from the first modified region closest to the laser light incident surface. Further, along the second planned cutting line, the second modified region which is second closest to the incident surface of the laser light is relatively large. In this way, the crack tends to extend from the second modified region toward the thickness direction of the SiC substrate, and the crack generated in the second modified region near the laser light incident surface can reach the laser light incident surface or Near it. Moreover, along the second cutting line, the closest to the incident surface of the laser light The second modified region is formed relatively small. In this way, it is possible to prevent damage on the incident surface of the laser light, and it is possible to reliably cause the crack to reach the laser light incident surface from the second modified region. As described above, it is possible to surely allow the crack to pass from the first modified region to the laser light incident surface along the first line to cut, and to reliably cause the crack along the second line to cut. The laser light incident surface is reached from the second modified region. Therefore, according to the laser processing method, a plate-shaped object to be processed having a hexagonal SiC substrate (having a main surface which is offset from the c-plane) can be cut with high precision along the line to cut. The off angle is also the case where 0° is included. In this case, the main surface is parallel to the c-plane. Further, the second step may be performed after the first step, or the first step may be performed after the second step.
本發明的一觀點之雷射加工方法,可在第1步驟及第2步驟之後進一步具備第3步驟;該第3步驟,是以前述第1改質區域為起點而沿著第1切斷預定線將加工對象物切斷,並以第2改質區域為起點而沿著第2切斷預定線將前述加工對象物切斷。如此,可獲得沿著切斷預定線被高精度地切斷後之加工對象物。又能夠在沿著第1切斷預定線進行切斷之後再實施沿著第2切斷預定線之切斷,也能夠在沿著第2切斷預定線進行切斷之後再實施沿著第1切斷預定線之切斷。 The laser processing method according to one aspect of the present invention may further include a third step after the first step and the second step, and the third step is to follow the first modified region as a starting point and to follow the first cutting schedule The line cuts the object to be processed, and cuts the object to be processed along the second line to cut along the second modified region. In this way, the object to be processed which is cut with high precision along the line to cut can be obtained. Further, after cutting along the first line to cut, the cutting along the second line to cut can be performed, and the cutting along the second line to cut can be performed along the first line. Cut off the cut of the predetermined line.
本發明的一觀點之雷射加工方法中,第1改質區域及第2改質區域會有包含熔融處理區域的情況。 In the laser processing method according to one aspect of the present invention, the first modified region and the second modified region may include a molten processed region.
依據本發明,能夠將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物沿著切斷 預定線予以高精度地切斷。 According to the present invention, it is possible to cut the object to be processed in a plate shape including a hexagonal SiC substrate (having a main surface which is deviated from the c-plane) The predetermined line is cut off with high precision.
以下,針對本發明之較佳實施方式,參照圖式進行詳細的說明。又各圖中對於相同或相當的部分是賦予同一符號而省略重複的說明。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the respective drawings, the same or corresponding components are designated by the same reference numerals, and the description thereof will not be repeated.
在本發明的一實施方式之雷射加工方法,是沿著切斷預定線對加工對象物照射雷射光,藉此沿著切斷預定線在加工對象物的內部形成改質區域。於是,首先針對此改質區域的形成,參照第1圖~第6圖作說明。 In the laser processing method according to the embodiment of the present invention, the object to be processed is irradiated with the laser beam along the line to cut, whereby the modified region is formed inside the object to be processed along the line to cut. Therefore, first, the formation of the modified region will be described with reference to Figs. 1 to 6 .
如第1圖所示般,雷射加工裝置100係具備:將雷射光L施以脈衝振盪之雷射光源101、配置成讓雷射光L的光軸(光路)方向改變90°之分光鏡103、以及用來將雷射光L聚光之聚光用透鏡105。此外,雷射加工裝置100係具備:用來支承加工對象物1(被經由聚光用透鏡105聚光後之雷射光L所照射)之支承台107、讓支承台107移動之載台111、為了調節雷射光L的輸出和脈衝寬等而控制雷射光源101之雷射光源控制部102、以及控制載台111的移動之載台控制部115。 As shown in Fig. 1, the laser processing apparatus 100 includes a laser light source 101 that applies pulsed laser light to the laser beam 101, and a beam splitter 103 that is arranged to change the optical axis (light path) direction of the laser light L by 90°. And a collecting lens 105 for collecting the laser light L. Further, the laser processing apparatus 100 includes a support base 107 for supporting the object 1 to be irradiated (the laser beam L is condensed by the condensing lens 105), and a stage 111 for moving the support table 107, The laser light source control unit 102 of the laser light source 101 and the stage control unit 115 that controls the movement of the stage 111 are controlled to adjust the output of the laser light L and the pulse width.
在該雷射加工裝置100,從雷射光源101射出的雷射光L,經由分光鏡103將其光軸方向改變90°後,藉由聚光用透鏡105聚光於支承台107上所載置之加工對象物1的內部。在此同時,讓載台111移動,使加工對象物1相對於雷射光L沿著切斷預定線5進行相對移動。藉此,讓 沿著切斷預定線5之改質區域形成於加工對象物1。 In the laser processing apparatus 100, the laser beam L emitted from the laser light source 101 is changed in the optical axis direction by the beam splitter 103 by 90 degrees, and then condensed on the support table 107 by the collecting lens 105. The inside of the object 1 to be processed. At the same time, the stage 111 is moved to relatively move the object 1 with respect to the laser beam L along the line to cut 5 . Take this The modified region along the line to cut 5 is formed in the object 1 to be processed.
如第2圖所示般,在加工對象物1上,設定有用來切斷加工對象物1之切斷預定線5。切斷預定線5是呈直線狀延伸之假想線。要在加工對象物1內部形成改質區域的情況,如第3圖所示般,是在聚光點P對準加工對象物1內部的狀態下,讓雷射光L沿著切斷預定線5(亦即第2圖的箭頭A方向)相對地移動。藉此,如第4圖~第6圖所示般,讓改質區域7沿著切斷預定線5形成於加工對象物1的內部,沿著切斷預定線5形成之改質區域7成為切斷起點區域8。 As shown in FIG. 2, a cutting line 5 for cutting the object 1 is set in the object 1 to be processed. The line to cut 5 is an imaginary line extending linearly. In the case where the modified region is formed inside the object 1 as shown in FIG. 3, the laser light L is placed along the line to cut 5 in a state where the light-converging point P is aligned inside the object 1 (that is, the direction of the arrow A in Fig. 2) relatively moves. As a result, as shown in FIG. 4 to FIG. 6, the modified region 7 is formed inside the object 1 along the line to cut 5, and the modified region 7 formed along the line to cut 5 becomes The starting point area 8 is cut.
又聚光點P是雷射光L所聚光的部位。此外,切斷預定線5,並不限於直線狀而是曲線狀亦可,並不限於假想線而是在加工對象物1表面3上實際畫設的線亦可。此外,改質區域7,可以是連續形成的情況,也可以是斷續形成的情況。此外,改質區域7是列狀或點狀皆可,重點是改質區域7至少形成於加工對象物1的內部即可。此外,會有以改質區域7為起點而形成龜裂的情況,龜裂及改質區域7是露出加工對象物1的外表面(表面、背面、或外周面)亦可。 Further, the condensed spot P is a portion where the laser light L is condensed. Further, the line to cut 5 is not limited to a linear shape but may be a curved shape, and may not be limited to an imaginary line but may be a line actually drawn on the surface 3 of the object 1 to be processed. Further, the modified region 7 may be formed continuously or intermittently. Further, the modified region 7 may be in the form of a column or a dot, and it is important that the modified region 7 is formed at least inside the object 1 to be processed. In addition, a crack may be formed from the modified region 7 as a starting point, and the cracked and modified region 7 may expose the outer surface (surface, back surface, or outer peripheral surface) of the object 1 to be processed.
附帶一提的,在此的雷射光L,是讓加工對象物1透過且特別是在加工對象物1內部之聚光點附近被吸收,藉此在加工對象物1形成改質區域7(亦即內部吸收型雷射加工)。如此,在加工對象物1的表面3幾乎不會吸收雷射光L,因此加工對象物1的表面3不致發生熔融。一般 而言,在從表面3被熔融除去而形成孔洞、溝槽等除去部(表面吸收型雷射加工)的情況,加工區域是從表面3側逐漸朝背面側進展。 Incidentally, the laser light L here is such that the object 1 is transmitted and is absorbed particularly in the vicinity of the condensing point inside the object 1 to form the modified region 7 in the object 1 (also That is, internal absorption type laser processing). As described above, since the laser light L is hardly absorbed on the surface 3 of the object 1 to be processed, the surface 3 of the object 1 does not melt. general In the case where the surface 3 is melted and removed to form a removal portion such as a hole or a groove (surface absorption type laser processing), the processed region gradually progresses from the surface 3 side toward the back surface side.
然而,本實施形態所形成的改質區域,是指密度、折射率、機械強度、其他的物理特性變成與周圍不同的狀態之區域。作為改質區域,例如包括熔融處理區域、裂痕區域、絕緣破壞區域、折射率變化區域等,也可以是其等混合存在的區域。再者,作為改質區域,也包括:加工對象物的材料中改質區域的密度相較於非改質區域的密度發生改變的區域、形成有晶格缺陷的區域(其等也能統稱為高密度差排區域)。 However, the modified region formed in the present embodiment means a region in which the density, the refractive index, the mechanical strength, and other physical properties are different from the surroundings. The modified region includes, for example, a molten processed region, a cracked region, an insulating fracture region, a refractive index change region, and the like, and may be a region in which the mixture is mixed. Further, the modified region includes: a region in which the density of the modified region in the material of the object to be processed is changed from that in the non-modified region, and a region in which a lattice defect is formed (these can also be collectively referred to as High density difference row area).
此外,熔融處理區域、折射率變化區域、改質區域的密度相較於非改質區域的密度發生改變的區域、形成有晶格缺陷的區域,進一步會有在該等區域的內部、或改質區域和非改質區域的界面包含龜裂(裂縫、微裂痕)的情況。所包含的龜裂,可能遍及改質區域的全面、僅形成於一部分、或是形成於複數部分。 Further, the region where the density of the molten processed region, the refractive index change region, and the modified region is changed compared to the density of the non-modified region, and the region where the lattice defect is formed may further be internal to the regions, or may be modified. The interface between the qualitative region and the non-modified region includes cracks (cracks, micro-cracks). The cracks involved may be comprehensive throughout the modified region, formed only in a portion, or formed in a plurality of portions.
此外,在本實施方式,藉由沿著切斷預定線5形成複數個改質點(加工痕),而形成改質區域7。改質點,是藉由脈衝雷射光之1脈衝的照射(亦即1脈衝的雷射照射:Laser Shot)所形成的改質部分,改質點的集合成為改質區域7。作為改質點,是包含裂痕點、熔融處理點、折射率變化點、或是混合存在有該等點之至少一個等。 Further, in the present embodiment, the modified region 7 is formed by forming a plurality of modified spots (machining marks) along the line to cut 5 . The modified spot is a modified portion formed by one pulse of pulsed laser light (that is, a one-shot laser shot: Laser Shot), and the set of modified spots becomes the modified region 7. The modified point includes at least one of a crack point, a melting treatment point, a refractive index change point, or a mixture of the points.
關於該改質點較佳為,考慮所要求的切斷精度、所要 求的切斷面之平坦性、加工對象物的厚度、種類、結晶方位等,來適當地控制其大小、所發生的龜裂長度。 It is preferable to consider the required cutting accuracy and the desired correction point. The flatness of the cut surface, the thickness, the type, the crystal orientation of the object to be processed, and the like are appropriately controlled to control the size and the crack length that occurs.
接下來,針對本發明的一實施方式之雷射加工方法作詳細的說明。如第7圖所示般,加工對象物1係具備SiC基板12之圓形板狀(例如直徑3吋、厚度350μm)之晶圓。如第8圖所示般,SiC基板12具有六方晶系的結晶構造,其結晶軸CA相對於SiC基板12的厚度方向以角度θ(例如4°)形成傾斜。亦即,SiC基板12是具有偏離角度θ之六方晶系SiC基板。如第9圖所示般,SiC基板12具有:與c面形成偏離角度θ之表面(主面)12a及背面(主面)12b。在SiC基板12中,a面相對於SiC基板12的厚度方向(圖中的二點鏈線)以角度θ形成傾斜;m面相對於SiC基板12的厚度方向並未形成傾斜。 Next, a laser processing method according to an embodiment of the present invention will be described in detail. As shown in FIG. 7, the object 1 is a wafer having a circular plate shape (for example, a diameter of 3 turns and a thickness of 350 μm) of the SiC substrate 12. As shown in FIG. 8, the SiC substrate 12 has a hexagonal crystal structure, and the crystal axis CA is inclined at an angle θ (for example, 4°) with respect to the thickness direction of the SiC substrate 12. That is, the SiC substrate 12 is a hexagonal SiC substrate having an off angle θ. As shown in Fig. 9, the SiC substrate 12 has a surface (main surface) 12a and a back surface (main surface) 12b which are formed at an angle θ from the c-plane. In the SiC substrate 12, the a-plane is inclined at an angle θ with respect to the thickness direction of the SiC substrate 12 (two-point chain line in the drawing); the m-plane is not inclined with respect to the thickness direction of the SiC substrate 12.
如第7圖及第9圖所示般,朝與表面12a及a面平行的方向延伸之複數條的切斷預定線(第1切斷預定線)5a、和朝與表面12a及m面平行的方向延伸之複數條的切斷預定線(第2切斷預定線)5m,是呈格子狀(例如1mm×1mm)地設定在加工對象物1上。在SiC基板12的表面12a,在藉由切斷預定線5a,5m畫設之各區域形成功能元件,在SiC基板12的背面12b,在藉由切斷預定線5a,5m畫設之各區域形成金屬配線。功能元件及金屬配線,在沿著切斷預定線5a,5m將加工對象物1切斷而獲得之各個片狀體中構成功率元件。又在SiC基板12,在與切斷預定線5a平行的方向形成定向平面6a,在與切斷預定線 5m平行的方向形成定向平面6m。 As shown in Fig. 7 and Fig. 9, a plurality of planned cutting lines (first cutting planned lines) 5a extending in a direction parallel to the surface 12a and the a surface are parallel to the surface 12a and the m surface. The cutting line (second cutting planned line) 5 m of a plurality of lines extending in the direction is set in a lattice shape (for example, 1 mm × 1 mm) on the object 1 to be processed. On the surface 12a of the SiC substrate 12, functional elements are formed in the respective regions drawn by the predetermined lines 5a, 5m, and the regions on the back surface 12b of the SiC substrate 12 are cut by the predetermined lines 5a, 5m. Metal wiring is formed. The functional element and the metal wiring constitute a power element in each of the sheet-like bodies obtained by cutting the object 1 along the line to cut 5a, 5m. Further, in the SiC substrate 12, an orientation flat 6a is formed in a direction parallel to the line to cut 5a, and a line to cut is formed. The 5 m parallel direction forms an orientation plane 6 m.
將以上的加工對象物1沿著切斷預定線5a,5m如下述般進行切斷。首先,如第10圖所示般,以覆蓋SiC基板12的背面12b之金屬配線的方式在加工對象物1上貼附擴展膠帶23。接著,如第11(a)圖所示般,將以20ns~100ns的脈衝寬(更佳為50ns~60ns的脈衝寬)進行脈衝振盪後之雷射光L的聚光點P對準SiC基板12內部,以脈衝節距為10μm~18μm的方式(更佳為脈衝節距為12μm~14μm的方式)沿著切斷預定線5a將雷射光L照射於加工對象物1。藉此,沿著切斷預定線5a,將作為切斷起點之改質區域(第1改質區域)7a形成於SiC基板12的內部。該改質區域7a是包含熔融處理區域。又脈衝節距是指,「雷射光L的聚光點P相對於加工對象物1之移動速度」除以「脈衝雷射光L的重複頻率」之值。 The above-described object 1 is cut along the line to cut 5a, 5m as follows. First, as shown in FIG. 10, the expanded tape 23 is attached to the object 1 so as to cover the metal wiring of the back surface 12b of the SiC substrate 12. Next, as shown in FIG. 11(a), the condensed spot P of the laser light L pulse-oscillated with a pulse width of 20 ns to 100 ns (more preferably, a pulse width of 50 ns to 60 ns) is aligned with the SiC substrate 12 In the inside, the laser light L is irradiated onto the object 1 along the line to cut 5a so that the pulse pitch is 10 μm to 18 μm (more preferably, the pulse pitch is 12 μm to 14 μm). Thereby, the modified region (first modified region) 7a as the cutting start point is formed inside the SiC substrate 12 along the line to cut 5a. The modified region 7a is a molten processed region. The pulse pitch is a value obtained by dividing "the moving speed of the focused spot P of the laser light L with respect to the object 1" by the "repetition frequency of the pulsed laser light L".
針對改質區域7a的形成作更詳細地說明。以SiC基板12的表面12a作為雷射光入射面而讓雷射光L的聚光點P位於SiC基板12內部,沿著切斷預定線5a讓聚光點P相對地移動。而且,讓沿著切斷預定線5a之聚光點P的相對移動,對於1條切斷預定線5進行複數次(例如8次)。這時,每次都改變從表面12a到聚光點P位置之距離,藉此以沿SiC基板12的厚度方向排列的方式對於1條切斷預定線5a形成複數列(第1列數,例如8列)的改質區域7a。在此,以使離SiC基板12之雷射光入射面(表面12a)第2近的改質區域7a比離表面12a最近的 改質區域7a更小的方式,從SiC基板12之背面12b側依序(亦即,依離雷射光入射面從遠到近的順序)形成改質區域7a。又改質區域7a的大小,例如能藉由改變雷射光L的脈衝能量而予以調節。 The formation of the modified region 7a will be described in more detail. The surface 12a of the SiC substrate 12 serves as a laser light incident surface, and the condensed spot P of the laser light L is positioned inside the SiC substrate 12, and the condensed spot P is relatively moved along the line to cut 5a. Further, the relative movement of the condensed spot P along the line to cut 5a is made plural times (for example, eight times) for one line to cut. At this time, the distance from the surface 12a to the position of the light-converging point P is changed each time, thereby forming a plurality of columns (the number of the first column, for example, 8) for one planned cutting line 5a so as to be aligned in the thickness direction of the SiC substrate 12. The modified region 7a of the column). Here, the modified region 7a which is second closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is closer to the surface 12a. In a manner in which the modified region 7a is smaller, the modified region 7a is formed sequentially from the side of the back surface 12b of the SiC substrate 12 (that is, in order from the far side to the near side of the laser light incident surface). The size of the modified region 7a can be adjusted, for example, by changing the pulse energy of the laser light L.
如此,使從各改質區域7a發生的龜裂朝SiC基板12的厚度方向伸展而互相連結。特別是讓從離SiC基板12的雷射光入射面(表面12a)最近的改質區域7a朝SiC基板12的厚度方向伸展後的龜裂,到達表面12a。這點,關於將硬度僅次於鑽石之難加工材料所構成的SiC基板12沿著切斷預定線5a予以高精度地切斷方面,是非常重要的。 In this manner, the cracks generated from the respective modified regions 7a are extended toward the thickness direction of the SiC substrate 12 to be connected to each other. In particular, the crack extending from the modified region 7a closest to the laser light incident surface (surface 12a) of the SiC substrate 12 toward the thickness direction of the SiC substrate 12 reaches the surface 12a. In this regard, it is very important that the SiC substrate 12 composed of the hard-to-machine material having a hardness second only to the diamond is cut with high precision along the line to cut 5a.
當沿著切斷預定線5a形成改質區域7a後,如第11(b)圖所示般,讓以20ns~100ns的脈衝寬(更佳為50ns~60ns的脈衝寬)進行脈衝振盪後之雷射光L的聚光點P對準SiC基板12內部,以脈衝節距為10μm~18μm的方式(更佳為脈衝節距為12μm~14μm)沿著切斷預定線5m將雷射光L照射於加工對象物1。如此,沿著切斷預定線5m,將作為切斷起點之改質區域(第2改質區域)7m形成於SiC基板12的內部。該改質區域7m是包含熔融處理區域。 After the modified region 7a is formed along the line to cut 5a, as shown in FIG. 11(b), the pulse width of 20 ns to 100 ns (more preferably, the pulse width of 50 ns to 60 ns) is pulse-oscillated. The condensed spot P of the laser light L is aligned with the inside of the SiC substrate 12, and the laser light L is irradiated along the line 5d to be cut at a pulse pitch of 10 μm to 18 μm (more preferably, the pulse pitch is 12 μm to 14 μm). Processing object 1. In this manner, a modified region (second modified region) 7m as a cutting start point is formed inside the SiC substrate 12 along the line to cut 5m. The modified region 7m is a molten processed region.
針對改質區域7m的形成作更詳細地說明。以SiC基板12的表面12a作為雷射光入射面而讓雷射光L的聚光點P位於SiC基板12內部,沿著切斷預定線5m。而且,讓沿著切斷預定線5m之聚光點P的相對移動,對於1條 切斷預定線5進行複數次(例如6次)。這時,每次都改變從表面12a到聚光點P位置之距離,藉此以沿SiC基板12的厚度方向排列的方式對於1條切斷預定線5m形成複數列(比第1列數更少的第2列數(包含1列的情況),例如6列)的改質區域7m。在此,以使離SiC基板12之雷射光入射面(表面12a)最近的改質區域7m比離表面12a第2近的改質區域7m更小的方式,從SiC基板12之背面12b側依序(亦即,依離雷射光入射面從遠到近的順序)形成改質區域7m。又改質區域7m的大小,例如能藉由改變雷射光L的脈衝能量而予以調節。 The formation of the modified region 7m will be described in more detail. The surface 12a of the SiC substrate 12 is used as a laser light incident surface, and the condensed spot P of the laser light L is placed inside the SiC substrate 12 along the line to cut 5m. Moreover, let the relative movement of the condensed spot P along the cut line 5m, for one The cut line 5 is cut a plurality of times (for example, six times). At this time, the distance from the surface 12a to the position of the light-converging point P is changed every time, whereby a plurality of columns (less than the first column) are formed for one planned cutting line 5m so as to be aligned in the thickness direction of the SiC substrate 12. The modified region 7m of the second column number (including one column), for example, six columns). Here, the modified region 7m closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is made smaller from the back surface 12b side of the SiC substrate 12 so that the modified region 7m closest to the second surface 12a is smaller. The order (i.e., in order from the far side to the near side of the incident surface of the laser light) forms the modified region 7m. The size of the modified region 7m can be adjusted, for example, by changing the pulse energy of the laser light L.
如此,使從各改質區域7m發生的龜裂朝SiC基板12的厚度方向伸展而互相連結。特別是讓從離SiC基板12的雷射光入射面(表面12a)最近的改質區域7m朝SiC基板12的厚度方向伸展後的龜裂,到達表面12a。這點,關於將硬度僅次於鑽石之難加工材料所構成的SiC基板12沿著切斷預定線5m予以高精度地切斷方面,是非常重要的。 In this manner, the cracks generated from the respective modified regions 7m are extended toward the thickness direction of the SiC substrate 12 to be connected to each other. In particular, the crack extending from the modified region 7m closest to the laser light incident surface (surface 12a) of the SiC substrate 12 toward the thickness direction of the SiC substrate 12 reaches the surface 12a. In this regard, it is very important that the SiC substrate 12 composed of the hard-to-machine material having a hardness second only to the diamond is cut with high precision along the line to cut 5m.
沿著切斷預定線5m形成改質區域7m後,如第12(a)圖所示般讓擴展膠帶23擴張,在此狀態下,沿著各切斷預定線5m,將刀刃41透過擴展膠帶23按壓在SiC基板12的背面12b上。藉此,以改質區域7m為起點沿著切斷預定線5m將加工對象物1切成棒狀。這時,由於擴展膠帶23處於擴張後的狀態,如第12(b)圖所示般,切成棒狀後之加工對象物1會互相分離。 After the modified region 7m is formed along the line to cut 5m, the expanded tape 23 is expanded as shown in Fig. 12(a), and in this state, the blade 41 is passed through the expanded tape along each cut line 5m. 23 is pressed against the back surface 12b of the SiC substrate 12. Thereby, the object 1 is cut into a rod shape along the line to cut 5m from the modified region 7m. At this time, since the expanded tape 23 is in an expanded state, as shown in Fig. 12(b), the objects 1 to be cut into a rod shape are separated from each other.
沿著切斷預定線5m將加工對象物1切斷後,如第13(a)圖所示般,在繼續使擴展膠帶23擴張的狀態下,沿著各切斷預定線5a,將刀刃41透過擴展膠帶23按壓在SiC基板12的背面12b上。如此,以改質區域7a為起點沿著切斷預定線5a將加工對象物1切成片狀。這時,由於擴展膠帶23處於擴張後的狀態,如第13(b)圖所示般,被切成片狀後的加工對象物1會互相分離。如以上所述般,將加工對象物1沿著切斷預定線5a,5m切成片狀而獲得多數個功率元件。 After the object 1 is cut along the line to cut 5m, as shown in Fig. 13(a), while the expansion tape 23 is continuously expanded, the blade 41 is passed along each line 5a to be cut. The expansion tape 23 is pressed against the back surface 12b of the SiC substrate 12. In this manner, the object 1 is cut into a sheet shape along the line to cut 5a starting from the modified region 7a. At this time, since the expanded tape 23 is in an expanded state, as shown in Fig. 13(b), the objects 1 to be cut into pieces are separated from each other. As described above, the object 1 is cut into a sheet shape along the line to cut 5a, 5m to obtain a plurality of power elements.
依據以上的雷射加工方法,基於如下的理由,能將具備六方晶系SiC基板12(具有與c面形成偏離角度的表面12a)之板狀的加工對象物1沿著切斷預定線5a,5m予以高精度地切斷,結果可獲得沿著切斷預定線5a,5m被高精度地切斷後之加工對象物1(亦即,功率元件)。 According to the above-described laser processing method, the object 1 having a plate shape including the hexagonal SiC substrate 12 (having a surface 12a which is deviated from the c-plane) can be along the line to cut 5a. 5 m is cut with high precision, and as a result, the object 1 to be processed (that is, the power element) which is cut with high precision along the line to cut 5a and 5 m can be obtained.
首先,以脈衝節距為10μm~18μm的方式沿著切斷預定線5a,5m對加工對象物1照射雷射光L。若在此條件下對加工對象物1照射雷射光L,能使龜裂容易從改質區域7a,7m朝SiC基板12的厚度方向伸展,且使龜裂不容易從改質區域7a,7m朝c面方向伸展。再者,如果以脈衝節距為12μm~14μm的方式沿著切斷預定線5a,5m對加工對象物1照射雷射光L的話,能使龜裂更容易從改質區域7a,7m朝SiC基板12的厚度方向伸展,且能使龜裂更不容易從改質區域7a,7m朝c面方向伸展。 First, the object 1 is irradiated with the laser light L along the line to cut 5a, 5m so that the pulse pitch is 10 μm to 18 μm. When the object 1 is irradiated with the laser light L under these conditions, the crack can be easily extended from the modified regions 7a and 7m toward the thickness direction of the SiC substrate 12, and the crack is not easily changed from the modified region 7a, 7m toward The c-plane extends. In addition, when the laser beam L is irradiated to the object 1 along the line to cut 5a, 5m so that the pulse pitch is 12 μm to 14 μm, the crack can be more easily changed from the modified region 7a, 7m toward the SiC substrate. The thickness direction of 12 is extended, and the crack is less likely to extend from the modified region 7a, 7m toward the c-plane.
此外,以20ns~100ns的脈衝寬讓雷射光L進行脈衝 振盪。如此,能確實地使龜裂容易從改質區域7a,7m朝SiC基板12的厚度方向伸展,且確實地使龜裂不容易從改質區域7a,7m朝c面方向伸展。再者,如果以50ns~60ns的脈衝寬讓雷射光L進行脈衝振盪的話,能更確實地使龜裂容易從改質區域7a,7m朝SiC基板12的厚度方向伸展,且更確實地使龜裂不容易從改質區域7a,7m朝c面方向伸展。 In addition, the laser light L is pulsed with a pulse width of 20 ns to 100 ns. oscillation. In this way, it is possible to reliably cause the crack to easily extend from the modified regions 7a and 7m toward the thickness direction of the SiC substrate 12, and it is possible to reliably prevent the crack from extending from the modified regions 7a and 7m toward the c-plane direction. In addition, when the laser beam L is pulse-oscillated with a pulse width of 50 ns to 60 ns, the crack can be more reliably made to extend from the modified region 7a, 7m toward the thickness direction of the SiC substrate 12, and the turtle is more surely made. The crack does not easily extend from the modified region 7a, 7m toward the c-plane.
此外,沿著切斷預定線5a,使離SiC基板12之雷射光入射面(表面12a)第2近的改質區域7a形成相對較小。如此,即使a面相對於SiC基板12的厚度方向形成傾斜,仍能防止離表面12a第2近的改質區域7a所發生的龜裂朝a面方向伸展,而能避免以大幅偏離切斷預定線5a的狀態到達表面12a。而且,沿著切斷預定線5a,使離SiC基板12之雷射光入射面(表面12a)最近的改質區域7a形成相對較大。如此,雖然變成龜裂不容易從改質區域7a朝SiC基板12的厚度方向伸展的狀態,但能確實地讓龜裂從離表面12a最近的改質區域7a到達表面12a。此外,沿著切斷預定線5m,使離SiC基板12之雷射光入射面(表面12a)第2近的改質區域7m形成相對較大。如此,變成龜裂容易從改質區域7m朝SiC基板12的厚度方向伸展的狀態,並且能讓離表面12a第2近的改質區域7m所發生的龜裂到達表面12a或其附近。而且,沿著切斷預定線5m,讓離SiC基板12之雷射光入射面(表面12a)最近的改質區域7m形成相對較小。如此,可防止在表面 12a發生損傷,並能確實地讓龜裂從改質區域7m到達表面12a。如以上所述般,沿著切斷預定線5a,能確實地讓龜裂從改質區域7a到達表面12a,此外,沿著切斷預定線5m,能確實地讓龜裂從改質區域7m到達表面12a。此效果,與後述改質區域7a,7m的形成列數、形成順序無關而能發揮,又依據後述改質區域7a,7m的形成列數、形成順序則能更顯著地發揮。 Further, along the line to cut 5a, the modified region 7a which is second closest to the incident light surface (surface 12a) of the SiC substrate 12 is formed relatively small. In this manner, even if the a-plane is inclined with respect to the thickness direction of the SiC substrate 12, it is possible to prevent the crack generated in the modified region 7a which is second closest to the surface 12a from extending in the a-plane direction, and it is possible to avoid a large deviation from the planned cutting line. The state of 5a reaches the surface 12a. Further, along the line to cut 5a, the modified region 7a closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is formed relatively large. In this manner, the crack does not easily extend from the modified region 7a toward the thickness direction of the SiC substrate 12, but the crack can be surely made to reach the surface 12a from the modified region 7a closest to the surface 12a. Further, along the line to cut 5m, the modified region 7m which is second closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is relatively large. In this way, the crack easily spreads from the modified region 7m toward the thickness direction of the SiC substrate 12, and the crack generated in the modified region 7m which is second from the surface 12a can reach the surface 12a or its vicinity. Further, along the line to cut 5m, the modified region 7m closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is formed relatively small. So, it can be prevented on the surface The damage occurred in 12a, and the crack was surely allowed to reach the surface 12a from the modified region 7m. As described above, along the line to cut 5a, it is possible to surely allow the crack to reach the surface 12a from the modified region 7a, and further, along the line to cut 5m, the crack can be reliably made from the modified region 7m. Reach the surface 12a. This effect can be exhibited irrespective of the number of formation rows and the order of formation of the modified regions 7a and 7m to be described later, and can be more prominently exhibited in accordance with the number of formation rows and the formation order of the modified regions 7a and 7m which will be described later.
此外,比起沿著1條切斷預定線5m形成改質區域7m的情況,是沿著1條切斷預定線5a形成更多列的改質區域7a。如此,即使a面相對於SiC基板12的厚度方向形成傾斜,在形成各改質區域7a時可防止龜裂從改質區域7a朝a面方向大幅伸展,而且成為在所有的改質區域7a間使龜裂容易沿著SiC基板12的厚度方向連結的狀態。此外,比起沿著1條切斷預定線5a形成改質區域7a的情況,是沿著1條切斷預定線5m形成更少列的改質區域7m。如此,在形成各改質區域7m時,能使龜裂從改質區域7m朝SiC基板12的厚度方向大幅伸展。如以上所述般,能沿著切斷預定線5a讓龜裂從改質區域7a朝SiC基板12的厚度方向伸展,此外,能沿著切斷預定線5m讓龜裂從改質區域7m朝SiC基板12的厚度方向伸展。此效果,與前述改質區域7a,7m的形成尺寸、後述改質區域7a,7m的形成順序無關而能發揮,又依據前述改質區域7a,7m的形成尺寸、後述改質區域7a,7m的形成順序,則能更顯著地發揮。 Further, in the case where the modified region 7m is formed along one line to be cut 5m, a plurality of modified regions 7a are formed along one planned cutting line 5a. In this manner, even if the a-plane is inclined with respect to the thickness direction of the SiC substrate 12, it is possible to prevent the crack from being greatly extended from the modified region 7a toward the a-plane direction when the modified regions 7a are formed, and to make the between all the modified regions 7a The crack is easily connected to the SiC substrate 12 in the thickness direction. Further, in the case where the modified region 7a is formed along one planned cutting line 5a, the modified region 7m having fewer rows is formed along one planned cutting line 5m. As described above, when each modified region 7m is formed, the crack can be greatly extended from the modified region 7m toward the thickness direction of the SiC substrate 12. As described above, the crack can be extended from the modified region 7a toward the thickness direction of the SiC substrate 12 along the line to cut 5a, and the crack can be made from the modified region 7m along the line 5m to be cut. The SiC substrate 12 is stretched in the thickness direction. This effect can be exerted regardless of the formation size of the modified regions 7a, 7m and the order of formation of the modified regions 7a, 7m described later, and the size of the modified regions 7a, 7m, and the modified regions 7a, 7m, which will be described later. The order of formation can be played more prominently.
此外,在形成讓龜裂朝SiC基板12的厚度方向伸展的條件寬鬆之改質區域7m前,先形成讓龜裂朝SiC基板12的厚度方向伸展的條件嚴格之改質區域7a。如此,在形成改質區域7a時,在切斷預定線5a與切斷預定線5m交叉的部分,能防止龜裂從改質區域7a朝SiC基板12的厚度方向的伸展受到改質區域7m的阻礙。此效果,與前述改質區域7a,7m的形成尺寸、形成列數無關而能發揮。 In addition, before the modified region 7m in which the crack is stretched in the thickness direction of the SiC substrate 12 is formed, the modified region 7a in which the crack is extended in the thickness direction of the SiC substrate 12 is formed. When the modified region 7a is formed, the portion where the planned cutting line 5a and the planned cutting line 5m intersect with each other can prevent the crack from being extended from the modified region 7a toward the thickness direction of the SiC substrate 12 by the modified region 7m. Obstruction. This effect can be exerted regardless of the formation size and the number of rows of the modified regions 7a and 7m.
再者,以改質區域7m為起點沿著切斷預定線5m將加工對象物1切斷,然後以改質區域7a為起點沿著切斷預定線5a將加工對象物1切斷。如此,沿著切斷預定線5m(由於形成較少列的改質區域7m而想像比較難切斷)將加工對象物1切斷,然後沿著切斷預定線5a(由於形成較多列的改質區域7a而想像比較容易切斷)將加工對象物1切斷。因此,能使沿著切斷預定線5m將加工對象物1切斷所需的力和沿著切斷預定線5a將加工對象物1切斷所需的力均一化,而使沿著切斷預定線5m之切斷精度及沿著切斷預定線5a之切斷精度都更進一步提高。此效果,與前述改質區域7a,7m的形成尺寸、形成列數無關而能發揮。 In addition, the object 1 is cut along the line to cut 5m from the modified region 7m, and the object 1 is cut along the line to cut 5a starting from the modified region 7a. In this way, the object 1 is cut along the line to cut 5m (the imaginary is difficult to cut due to the formation of the modified region 7m of a small number of rows), and then along the line to cut 5a (due to the formation of a plurality of columns) The object to be processed 1 is cut by changing the region 7a and imagining that it is easier to cut. Therefore, the force required to cut the object 1 along the line to cut 5m and the force required to cut the object 1 along the line to cut 5a can be made uniform, and the cutting force can be cut along the cutting line 5a. The cutting accuracy of the predetermined line 5m and the cutting accuracy along the line to cut 5a are further improved. This effect can be exerted regardless of the formation size and the number of rows of the modified regions 7a and 7m.
第14圖係藉由上述雷射加工方法沿著切斷預定線5a切斷後的SiC基板12切斷面的相片。此外,第15圖係藉由上述雷射加工方法沿著切斷預定線5m切斷後的SiC基板12切斷面的相片。再者,第16圖係藉由上述雷射加工 方法沿著切斷預定線5a,5m切斷後之SiC基板12的平面相片。在此,是準備具有4°偏離角之厚度350μm的六方晶系SiC基板12。 Fig. 14 is a photograph of the cut surface of the SiC substrate 12 cut along the line to cut 5a by the above-described laser processing method. Further, Fig. 15 is a photograph of the cut surface of the SiC substrate 12 cut along the line to cut 5m by the above-described laser processing method. Furthermore, Figure 16 is performed by the above laser processing. The method cuts the planar photograph of the SiC substrate 12 along the cut line 5a, 5m. Here, a hexagonal SiC substrate 12 having a thickness of 350 μm having an off angle of 4° is prepared.
首先,如第14圖所示般,沿著切斷預定線5a,以沿SiC基板12的厚度方向排列的方式對於1條切斷預定線5a形成8列改質區域7a。而且以離SiC基板12之雷射光入射面(表面12a)第2近的改質區域7a比離表面12a最近的改質區域7a更小的方式,依從SiC基板12之背面12b側的順序形成改質區域7a。從第14圖可知,藉由形成離表面12a第2近的改質區域7a,能將從改質區域7a發生的龜裂之伸展制止。結果如第16圖所示般,相對於切斷預定線5a之切斷面的蛇行可抑制成±4μm以下。 First, as shown in Fig. 14, eight rows of modified regions 7a are formed for one planned cutting line 5a so as to be aligned along the thickness direction of the SiC substrate 12 along the line to cut 5a. Further, the modified region 7a which is second closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is smaller than the modified region 7a closest to the surface 12a, and is formed in accordance with the order of the back surface 12b side of the SiC substrate 12. Quality area 7a. As is apparent from Fig. 14, by forming the modified region 7a which is second closest to the surface 12a, the stretching of the crack generated from the modified region 7a can be stopped. As a result, as shown in Fig. 16, the meandering of the cut surface of the cutting planned line 5a can be suppressed to ±4 μm or less.
又從表面12a到聚光點P位置的距離,依從SiC基板12的背面12b側之改質區域7a的順序為314.5μm、280.0μm、246.0μm、212.0μm、171.5μm、123.5μm、79.0μm、32.0μm。此外,雷射光L的脈衝能量,依從SiC基板12的背面12b側之改質區域7a的順序為25μJ、25μJ、25μJ、25μJ、20μJ、15μJ、6μJ、6μJ。 Further, the distance from the surface 12a to the position of the condensed spot P is 314.5 μm, 280.0 μm, 246.0 μm, 212.0 μm, 171.5 μm, 123.5 μm, and 79.0 μm in accordance with the order of the modified region 7a on the back surface 12b side of the SiC substrate 12. 32.0 μm. Further, the pulse energy of the laser light L is 25 μJ, 25 μJ, 25 μJ, 25 μJ, 20 μJ, 15 μJ, 6 μJ, and 6 μJ in accordance with the order of the modified region 7 a on the back surface 12 b side of the SiC substrate 12 .
此外,如第15圖所示般,沿著切斷預定線5m,以沿SiC基板12的厚度方向排列的方式對於1條切斷預定線5m形成6列改質區域7m。而且,以離SiC基板12之雷射光入射面(表面12a)最近的改質區域7m比離表面12a第2近的改質區域7m更小的方式,依從SiC基板12之背面12b的順序形成改質區域7m。從第15圖可知,藉由形 成離表面12a第2近的改質區域7m,能讓從改質區域7m發生的龜裂伸展到表面12a或其附近。結果如第16圖所示般,相對於切斷預定線5m之切斷面的蛇行可抑制成±2μm以下。 Further, as shown in Fig. 15, six rows of modified regions 7m are formed for one planned cutting line 5m so as to be aligned along the cutting line 5m so as to be aligned in the thickness direction of the SiC substrate 12. Further, the modified region 7m closest to the laser light incident surface (surface 12a) of the SiC substrate 12 is smaller than the second modified region 7m from the surface 12a, and the order of the back surface 12b of the SiC substrate 12 is changed. The quality area is 7m. As can be seen from Figure 15, by shape The modified region 7m which is second to the second surface 12a can extend the crack generated from the modified region 7m to the surface 12a or its vicinity. As a result, as shown in Fig. 16, the meandering of the cut surface with respect to the cutting line of 5 m can be suppressed to ±2 μm or less.
又從表面12a到聚光點P位置的距離,依從SiC基板12的背面12b側之改質區域7m的順序為315.5μm、264.5μm、213.5μm、155.0μm、95.5μm、34.5μm。此外,雷射光L的脈衝能量,依從SiC基板12的背面12b側之改質區域7m的順序為25μJ、25μJ、20μJ、20μJ、15μJ、7μJ。 Further, the distance from the surface 12a to the position of the light-converging point P is 315.5 μm, 264.5 μm, 213.5 μm, 155.0 μm, 95.5 μm, and 34.5 μm in accordance with the order of the modified region 7m on the back surface 12b side of the SiC substrate 12. Further, the pulse energy of the laser light L is 25 μJ, 25 μJ, 20 μJ, 20 μJ, 15 μJ, and 7 μJ in accordance with the order of the modified region 7 m on the back surface 12 b side of the SiC substrate 12 .
接下來說明,從改質區域7a,7m到達SiC基板12之雷射光入射面(表面12a)的龜裂(以下稱為「半切割」)、與從改質區域7a,7m朝c面方向伸展的龜裂(以下稱為「c面裂痕」)的關係。在此,如第17圖及第18圖所示般,是以改質區域7a為對象來作說明;該改質區域7a,在朝SiC基板12的厚度方向讓龜裂伸展的情況,比起改質區域7m更難發生半切割且更容易發生c面裂痕。 Next, the cracks (hereinafter referred to as "half-cut") of the laser light incident surface (surface 12a) of the SiC substrate 12 from the modified regions 7a, 7m and the extension from the modified regions 7a, 7m toward the c-plane are described. The relationship between cracks (hereinafter referred to as "c-plane cracks"). Here, as shown in FIGS. 17 and 18, the modified region 7a is described as an object; the modified region 7a is formed by causing the crack to extend in the thickness direction of the SiC substrate 12, as compared with the case of the modified region 7a. It is more difficult for the modified region 7m to be half-cut and the c-plane crack is more likely to occur.
第19圖係顯示脈衝寬、ID臨限值、HC臨限值及加工裕度的關係之表。在此,讓脈衝寬以1ns、10ns~120ns的範圍改變,對於每個脈衝寬評價ID臨限值、HC臨限值及加工裕度。此外,第20圖係顯示脈衝節距、ID臨限值、HC臨限值及加工裕度的關係之表。在此,讓脈衝節距以6μm~22μm的範圍改變,對於每個脈衝節距評價ID臨限值、HC臨限值及加工裕度。 Figure 19 is a table showing the relationship between pulse width, ID threshold, HC threshold, and processing margin. Here, the pulse width is changed in the range of 1 ns and 10 ns to 120 ns, and the ID threshold value, the HC threshold value, and the processing margin are evaluated for each pulse width. In addition, Fig. 20 shows a table showing the relationship between the pulse pitch, the ID threshold, the HC threshold, and the processing margin. Here, the pulse pitch is changed in the range of 6 μm to 22 μm, and the ID threshold, the HC threshold, and the processing margin are evaluated for each pulse pitch.
又ID臨限值是指,能發生c面裂痕之雷射光L脈衝能量的最小值,依從ID臨限值高者(亦即,不容易發生c面裂痕)的順序評價為優、良、可、不可。此外,HC臨限值是指,能發生半切割之雷射光L脈衝能量的最小值,依從HC臨限值低者(亦即,容易發生半切割)的順序評價為優、良、可、不可。再者,加工裕度是ID臨限值與HC臨限值之差,依從加工裕度大者的順序評價為優、良、可、不可。而且,綜合是依ID臨限值、HC臨限值、加工裕度之優先順位進行加權,而評價為優、良、可、不可。 Further, the ID threshold value refers to the minimum value of the laser light L pulse energy at which the c-plane crack can occur, and the order in which the ID threshold is high (that is, the c-plane crack is unlikely to occur) is evaluated as excellent, good, and acceptable. No. In addition, the HC threshold value refers to the minimum value of the pulse energy of the laser light L which can be half-cut, and the order of the HC threshold is low (that is, the half cut is easy to occur), and the evaluation is excellent, good, OK, and not . Furthermore, the processing margin is the difference between the ID threshold and the HC threshold, and is evaluated as excellent, good, acceptable, and not in accordance with the order of the processing margin. Moreover, the integration is weighted according to the priority of the ID threshold, the HC threshold, and the processing margin, and the evaluation is excellent, good, acceptable, and impossible.
結果如第19圖所示般,較佳為以20ns~100ns的脈衝寬讓雷射光L進行脈衝振盪,更佳為以50ns~60ns的脈衝寬讓雷射光L進行脈衝振盪。如此,可抑制c面裂痕的發生並促進半切割的發生。又在脈衝寬10ns的情況之ID臨限值、加工裕度及綜合的各評價,比起脈衝寬20ns的情況是屬於更接近不可的可。 As a result, as shown in Fig. 19, it is preferable that the laser light L is pulse-oscillated with a pulse width of 20 ns to 100 ns, and it is more preferable that the laser light L is pulse-oscillated with a pulse width of 50 ns to 60 ns. In this way, the occurrence of c-plane cracks can be suppressed and the occurrence of half-cutting can be promoted. Further, in the case where the pulse width is 10 ns, the ID threshold, the processing margin, and the comprehensive evaluation are closer to the case where the pulse width is 20 ns.
此外如第20圖所示般,較佳為以脈衝節距為10μm~18μm的方式沿著切斷預定線5a,5m對SiC基板12照射雷射光L;更佳為以脈衝節距為11μm~15μm的方式沿著切斷預定線5a,5m對SiC基板12照射雷射光L;特佳為以脈衝節距為12μm~14μm的方式沿著切斷預定線5a,5m對SiC基板12照射雷射光L。如此,可抑制c面裂痕的發生並促進半切割的發生。又因為脈衝節距為10μm時ID臨限值的評價為可,如果更重視抑制c面裂痕發生的話,更佳 為使脈衝節距比10μm更大。 Further, as shown in Fig. 20, it is preferable that the SiC substrate 12 is irradiated with the laser light L along the line to cut 5a, 5m with a pulse pitch of 10 μm to 18 μm; more preferably, the pulse pitch is 11 μm. The SiC substrate 12 is irradiated with the laser light L along the line to cut 5a, 5m in a 15 μm manner; it is particularly preferable to irradiate the SiC substrate 12 with laser light along the line to cut 5a, 5 m with a pulse pitch of 12 μm to 14 μm. L. In this way, the occurrence of c-plane cracks can be suppressed and the occurrence of half-cutting can be promoted. Also, because the pulse threshold is 10 μm, the evaluation of the ID threshold is acceptable. If it is more important to suppress the occurrence of c-plane cracks, it is better. In order to make the pulse pitch larger than 10 μm.
第21圖~第23圖係顯示,雷射光L以數值孔徑0.8聚光的情況之脈衝寬及脈衝節距的加工裕度實驗結果之表。這些實驗結果,成為第19圖及第20圖所示的評價根據。獲得第21圖~第23圖的實驗結果之實驗條件如下述般。首先,以具有4°偏離角之厚度100μm的六方晶系SiC基板12為對象,沿著朝與表面12a及a面平行的方向延伸之切斷預定線5a讓雷射光L的聚光點P移動。此外,將雷射光L以數值孔徑0.8進行聚光,讓聚光點P對準離SiC基板12之雷射光入射面(表面12a)距離59μm的位置。 Fig. 21 to Fig. 23 show the experimental results of the processing margins of the pulse width and the pulse pitch of the laser light L with a numerical aperture of 0.8. These experimental results are based on the evaluations shown in Figs. 19 and 20. The experimental conditions for obtaining the experimental results of Figs. 21 to 23 are as follows. First, the hexagonal SiC substrate 12 having a thickness of 100 μm having an off angle of 4° is moved, and the light-converging point P of the laser light L is moved along the line to cut 5a extending in a direction parallel to the surfaces 12a and a. . Further, the laser light L was condensed at a numerical aperture of 0.8, and the condensed spot P was aligned at a position separated from the laser light incident surface (surface 12a) of the SiC substrate 12 by a distance of 59 μm.
使用以上實驗條件作為前提,讓雷射光L的能量(脈衝能量)及功率、雷射光L的脈衝節距分別改變,觀察改質區域7a以及半切割及c面裂痕的狀態。在第21圖~第23圖,雷射光L的脈衝寬分別為27ns、40ns、57ns,雷射光L的脈衝寬(重複頻率)分別為10kHz、20kHz、35kHz。 Using the above experimental conditions as a premise, the energy (pulse energy) of the laser light L and the power and the pulse pitch of the laser light L were respectively changed, and the state of the modified region 7a and the half-cut and c-plane cracks were observed. In Fig. 21 to Fig. 23, the pulse widths of the laser light L are 27 ns, 40 ns, and 57 ns, respectively, and the pulse width (repetition frequency) of the laser light L is 10 kHz, 20 kHz, and 35 kHz, respectively.
在第21圖~第23圖的實驗結果中,ST表示未發生半切割,HC表示發生了半切割。此外,ID表示發生了c面裂痕,LV1~LV3表示c面裂痕的發生規模。在沿著2條切斷預定線5a分別形成改質區域7a的情況,對於40mm的區域(20mm×2條的區域),將c面裂痕的發生區域未達150μm時以LV1表示,將c面裂痕的發生區域未達450μm時以LV2表示,將c面裂痕的發生區域為450μm以上時 以LV3表示。在LV1,朝與切斷預定線5a垂直的方向之c面裂痕的伸展為10μm~20μm,相對於此,在LV2,LV3,朝與切斷預定線5a垂直的方向之c面裂痕的伸展最大達100μm左右。 In the experimental results of Figs. 21 to 23, ST indicates that half cut did not occur, and HC indicates that half cut occurred. In addition, ID indicates that c-plane cracks have occurred, and LV1 to LV3 indicate the occurrence scale of c-plane cracks. In the case where the modified region 7a is formed along the two planned cutting lines 5a, for the region of 40 mm (the region of 20 mm × 2), when the region where the c-plane crack occurs is less than 150 μm, it is represented by LV1, and the c-plane is When the area where the crack occurs is less than 450 μm, it is expressed by LV2, and when the area where the crack of c-plane is generated is 450 μm or more. Expressed in LV3. In LV1, the extension of the c-plane crack in the direction perpendicular to the line to cut 5a is 10 μm to 20 μm, whereas in LV2, LV3, the extension of the c-plane crack in the direction perpendicular to the line to cut 5a is the largest. Up to about 100μm.
第24圖係顯示脈衝節距和HC臨限值的關係。此外,第25圖係顯示脈衝節距和ID臨限值的關係。再者,第26圖係顯示脈衝節距和加工裕度的關係。這些圖是根據第21圖~第23圖的實驗結果所作成的。如第24圖及第25圖所示般,若脈衝寬變大,HC臨限值及ID臨限值雙方都會上昇,比起HC臨限值的劣化(上昇),ID臨限值的提高(上昇)效果更大。這代表著,如第26圖所示般,隨著脈衝寬變大,加工裕度會變大。例如著眼於脈衝寬27ns及脈衝寬57ns的情況,當脈衝節距為12μm時,HC臨限值從15μJ到17μJ而劣化(上昇)2μJ,相對於此,ID臨限值則是從17μJ到29μJ而提高(上昇)12μJ。而且,在脈衝寬40ns的情況,比起脈衝寬27ns的情況,在脈衝節距10μm~16μm的範圍其加工裕度大幅提高。此外,在脈衝寬57ns的情況,比起脈衝寬27ns的情況,在脈衝節距6μm~20μm的範圍其加工裕度大幅提高。 Figure 24 shows the relationship between pulse pitch and HC threshold. In addition, Fig. 25 shows the relationship between the pulse pitch and the ID threshold. Furthermore, Figure 26 shows the relationship between pulse pitch and processing margin. These figures are based on the experimental results of Figures 21 to 23. As shown in Fig. 24 and Fig. 25, if the pulse width becomes larger, both the HC threshold and the ID threshold increase, and the ID threshold is increased compared to the deterioration (rise) of the HC threshold ( Rise) is more effective. This means that as shown in Fig. 26, as the pulse width becomes larger, the processing margin becomes larger. For example, when the pulse width is 27 ns and the pulse width is 57 ns, when the pulse pitch is 12 μm, the HC threshold is from 15 μJ to 17 μJ and deteriorates (rises) by 2 μJ. In contrast, the ID threshold is from 17 μJ to 29 μJ. And increase (rise) 12μJ. Further, in the case where the pulse width is 40 ns, the processing margin is greatly improved in the range of the pulse pitch of 10 μm to 16 μm compared to the case where the pulse width is 27 ns. Further, in the case where the pulse width is 57 ns, the processing margin is greatly improved in the range of the pulse pitch of 6 μm to 20 μm compared to the case where the pulse width is 27 ns.
第27圖~第29圖係顯示,將雷射光L以數值孔徑0.6聚光的情況之脈衝寬及脈衝節距的加工裕度實驗結果之表。這些實驗結果成為第19圖及第20圖所示的評價之根據。獲得第27圖~第29圖的實驗結果之實驗條件如下所述。首先,使用具有表面12a(與c面形成偏離角度)之厚 度350μm的六方晶系SiC基板12作為對象,沿著朝與表面12a及a面平行的方向延伸之切斷預定線5a讓雷射光L的聚光點P移動。此外,將雷射光L以數值孔徑0.6進行聚光,讓聚光點P對準離SiC基板12之雷射光入射面(表面12a)距離50μm的位置。 Fig. 27 to Fig. 29 show the experimental results of the processing margins of the pulse width and the pulse pitch in the case where the laser light L is condensed by the numerical aperture 0.6. These experimental results are the basis for the evaluation shown in Figs. 19 and 20. The experimental conditions for obtaining the experimental results of Figs. 27 to 29 are as follows. First, use a thick surface 12a (deviating from the c-plane) The hexagonal SiC substrate 12 having a degree of 350 μm is moved toward the light-converging point P of the laser light L along the line to cut 5a extending in a direction parallel to the surfaces 12a and a. Further, the laser light L was condensed at a numerical aperture of 0.6, and the condensed spot P was aligned at a position separated from the laser light incident surface (surface 12a) of the SiC substrate 12 by a distance of 50 μm.
使用以上實驗條件作為前提,讓雷射光L的能量(脈衝能量)及功率、雷射光L的脈衝節距分別改變,觀察改質區域7a以及半切割及c面裂痕的狀態。在第27圖~第29圖,雷射光L的脈衝寬分別為27ns、40ns、57ns,雷射光L的脈衝寬(重複頻率)分別為10kHz、20kHz、35kHz。 Using the above experimental conditions as a premise, the energy (pulse energy) of the laser light L and the power and the pulse pitch of the laser light L were respectively changed, and the state of the modified region 7a and the half-cut and c-plane cracks were observed. In the 27th to 29th, the pulse widths of the laser light L are 27 ns, 40 ns, and 57 ns, respectively, and the pulse width (repetition frequency) of the laser light L is 10 kHz, 20 kHz, and 35 kHz, respectively.
在第27圖~第29圖的實驗結果中,ST表示未發生半切割,HC表示發生了半切割。此外,ID表示發生c面裂痕,LV1~LV3表示c面裂痕的發生規模。LV1~LV3的基準是與上述第21圖~第23圖的實驗結果的情況相同。再者,OD表示:當雷射光L能量變大時,改質區域7a也變大,起因於此而暴走的龜裂大幅偏離切斷預定線5a而到達SiC基板12的表面12a。在此情況,不對c面裂痕進行評價。但在脈衝寬40ns及脈衝寬57ns的情況,在脈衝節距12μm以上並未發生大規模的c面裂痕。 In the experimental results of Figs. 27 to 29, ST indicates that half cut did not occur, and HC indicates that half cut occurred. In addition, ID indicates that c-plane cracks occur, and LV1 to LV3 indicate the occurrence scale of c-plane cracks. The reference of LV1 to LV3 is the same as the experimental results of the above 21st to 23rd. In addition, OD indicates that when the energy of the laser light L is increased, the modified region 7a also becomes large, and the crack that has migrated due to this greatly deviates from the line to cut 5a and reaches the surface 12a of the SiC substrate 12. In this case, the c-plane crack is not evaluated. However, in the case of a pulse width of 40 ns and a pulse width of 57 ns, large-scale c-plane cracks did not occur at a pulse pitch of 12 μm or more.
第30圖係顯示脈衝節距和HC臨限值的關係。該圖是根據第27圖~第29圖的實驗結果所作成的。如第30圖所示般,在脈衝寬57ns的情況,比起脈衝寬40ns的情況,HC臨限值劣化2μJ~4μJ左右。比起上述數值孔徑0.8的情 況,在數值孔徑0.6的情況,由於雷射光L的聚光點P受像差的影響變小,在脈衝寬57ns的情況和脈衝寬40ns的情況成為同一程度的HC臨限值。如此可說,如果進行像差修正的話,即使脈衝寬變大(至少到60ns為止)HC臨限值也不會劣化。 Figure 30 shows the relationship between pulse pitch and HC threshold. This figure is based on the experimental results of Figs. 27 to 29. As shown in Fig. 30, in the case where the pulse width is 57 ns, the HC threshold value is degraded by about 2 μJ to 4 μJ compared to the case where the pulse width is 40 ns. Compared to the above numerical aperture 0.8 In the case where the numerical aperture is 0.6, the converging point P of the laser light L is less affected by the aberration, and the HC threshold is the same level in the case where the pulse width is 57 ns and the case where the pulse width is 40 ns. In this way, if the aberration correction is performed, the HC threshold value does not deteriorate even if the pulse width becomes large (at least until 60 ns).
接下來說明,在SiC基板12之雷射光入射面(表面12a)附近之HC品質的加工裕度之實驗結果。獲得第31圖~第33圖的實驗結果時之實驗條件如下述般。首先,使用具有4°偏離角之厚度100μm的六方晶系SiC基板12作為對象,沿著朝與表面12a及a面平行的方向延伸之切斷預定線5a讓雷射光L之聚光點P移動。此外,將雷射光L以數值孔徑0.8進行聚光。 Next, an experimental result of the processing margin of the HC quality in the vicinity of the laser light incident surface (surface 12a) of the SiC substrate 12 will be described. The experimental conditions for obtaining the experimental results of Figs. 31 to 33 are as follows. First, a hexagonal SiC substrate 12 having a thickness of 100 μm having an off angle of 4° is used as a target, and the light-converging point P of the laser light L is moved along a line to cut 5a extending in a direction parallel to the surfaces 12a and a. . Further, the laser light L is condensed at a numerical aperture of 0.8.
首先,在第31圖的實驗結果,是分別以27ns,40ns,50ns,57ns的脈衝寬照射雷射光L,使用在聚光點位置25.3μm會發生半切割且在聚光點位置40.6μm不會發生半切割的能量(脈衝能量),讓聚光點位置在25.3μm~40.6μm的範圍內改變而觀察半切割的狀態。雷射光L的脈衝節距為14μm而保持一定。又聚光點位置是指從表面12a到聚光點P位置的距離。結果,脈衝寬所造成之半切割的品質劣化幾乎不會發生,在脈衝寬27ns~57ns可形成高品質(半切割相對於切斷預定線之蛇行很小)的半切割。此外,關於加工裕度,脈衝寬越大則變得越大。當脈衝寬較小時,一部分的半切割容易發生分岔或裂開(OD)。 First, the experimental result in Fig. 31 is that the laser light L is irradiated with a pulse width of 27 ns, 40 ns, 50 ns, and 57 ns, respectively, and half cut is performed at a position of 25.3 μm at the spot position and 40.6 μm at the spot position. The half-cut energy (pulse energy) is generated, and the position of the light-converging point is changed in the range of 25.3 μm to 40.6 μm to observe the state of the half-cut. The pulse pitch of the laser light L is 14 μm and is kept constant. The position of the condensed spot is the distance from the surface 12a to the position of the condensed spot P. As a result, the deterioration of the quality of the half cut caused by the pulse width hardly occurs, and a half cut of a high quality (small cut of the half cut with respect to the line to cut) can be formed at a pulse width of 27 ns to 57 ns. Further, regarding the processing margin, the larger the pulse width, the larger. When the pulse width is small, a part of the half cut is prone to splitting or cracking (OD).
此外,在第32圖的實驗結果,是分別以27ns,40ns,50ns,57ns的脈衝寬照射雷射光L,讓脈衝能量在7μJ~12μJ的範圍內改變而觀察半切割的狀態。雷射光L的脈衝節距為14μm而保持一定,聚光點位置為34.5μm而保持一定。結果,脈衝寬所造成之HC臨限值的變化幾乎不會發生。此外,相同脈衝能量可發生同一程度品質的半切割。 Further, in the experimental result of Fig. 32, the laser light L was irradiated with a pulse width of 27 ns, 40 ns, 50 ns, and 57 ns, respectively, and the pulse energy was changed in the range of 7 μJ to 12 μJ to observe the state of the half cut. The pulse pitch of the laser light L is 14 μm and is kept constant, and the position of the light-converging point is 34.5 μm and is kept constant. As a result, the change in the HC threshold caused by the pulse width hardly occurs. In addition, the same pulse energy can produce a half cut of the same degree of quality.
再者,在第33圖的實驗結果,是分別以10μm,12μm,14μm,16μm,18μm的脈衝節距照射雷射光L,讓脈衝能量在7μJ~12μJ的範圍內改變化而觀察半切割的狀態。雷射光L的脈衝寬為57ns而保持一定,聚光點位置為34.5μm而保持一定。結果,脈衝節距所造成之HC臨限值的變化幾乎不會發生。此外,在聚光點位置為34.5μm的情況,相同脈衝能量可發生同一程度品質的半切割。 Furthermore, in the experimental result of Fig. 33, the laser light L is irradiated with pulse pitches of 10 μm, 12 μm, 14 μm, 16 μm, and 18 μm, respectively, and the pulse energy is changed in the range of 7 μJ to 12 μJ to observe the state of the half cut. . The pulse width of the laser light L is kept constant for 57 ns, and the position of the light-converging point is 34.5 μm and is kept constant. As a result, changes in the HC threshold caused by the pulse pitch hardly occur. Further, in the case where the position of the condensed spot is 34.5 μm, the same pulse energy can be subjected to the half cut of the same quality.
接下來說明用來抑制c面裂痕之其他雷射加工方法。首先,準備具備六方晶系SiC基板12(具有與c面形成偏離角度的表面12a)之板狀的加工對象物1,設定切斷預定線5a,5m。接著,如第34(a)圖所示般,讓雷射光L的聚光點P對準SiC基板12內部,沿著設定於切斷預定線5a(5m)的兩側之2條預備線5p將雷射光L照射於加工對象物1。藉此,沿著各預備線5p將預備改質區域7p形成於SiC基板12內部。該預備改質區域7p是包含熔融處理區域。 Next, other laser processing methods for suppressing c-plane cracks will be described. First, a plate-shaped object 1 having a hexagonal SiC substrate 12 (having a surface 12a having an angle deviated from the c-plane) is prepared, and the planned cutting lines 5a and 5m are set. Next, as shown in Fig. 34(a), the condensed spot P of the laser light L is aligned inside the SiC substrate 12, along two preparatory lines 5p set on both sides of the planned cutting line 5a (5 m). The laser light L is irradiated onto the object 1 to be processed. Thereby, the preliminary modified region 7p is formed inside the SiC substrate 12 along each of the preliminary lines 5p. The preliminary modified region 7p includes a molten processed region.
預備線5p,是在與表面12a平行的面內位於切斷預定線5a(5m)兩側且朝向與切斷預定線5a(5m)平行的方 向延伸。又在藉由切斷預定線5a,5m所畫設之各區域而在SiC基板12的表面12a形成有功能元件的情況,從SiC基板12的厚度方向觀察,較佳為將預備線5p設定在相鄰的功能元件間之區域內。 The preparatory line 5p is located on both sides of the planned cutting line 5a (5m) in a plane parallel to the surface 12a and faces the line parallel to the planned cutting line 5a (5m). Extend. Further, when the functional elements are formed on the surface 12a of the SiC substrate 12 by cutting the respective regions drawn by the predetermined lines 5a, 5m, it is preferable to set the standby line 5p when viewed from the thickness direction of the SiC substrate 12. Within the area between adjacent functional components.
沿著各預備線5p將雷射光L照射於加工對象物1時,比起作為切斷起點之改質區域7a(7m),從預備改質區域7p更不容易在SiC基板12發生龜裂。預備改質區域7p,可藉由縮小雷射光L的脈衝能量、脈衝節距、脈衝寬等,而變得比作為切斷起點之改質區域7a(7m)更不容易在SiC基板12發生龜裂。 When the laser light L is irradiated onto the object 1 along each of the preparatory lines 5p, the SiC substrate 12 is less likely to be cracked from the preliminary modified region 7p than the modified region 7a (7m) which is the starting point of the cutting. By preparing the modified region 7p, it is possible to reduce the pulse energy, the pulse pitch, the pulse width, and the like of the laser light L, and it is less likely to cause a turtle on the SiC substrate 12 than the modified region 7a (7m) which is the starting point of the cutting. crack.
沿著預備線5p形成預備改質區域7p後,讓雷射光L的聚光點P對準SiC基板12內部,沿著切斷預定線5a(5m)將雷射光L照射於加工對象物1。藉此,沿著切斷預定線5a(5m)將作為切斷起點之改質區域7a(7m)形成於SiC基板12內部。該改質區域7a(7m)是包含熔融處理區域。沿著切斷預定線5a(5m)形成改質區域7a(7m)後,以改質區域7a(7m)為起點而沿著切斷預定線5a(5m)將加工對象物1予以切斷。 After the preliminary modified region 7p is formed along the preliminary line 5p, the light-converging point P of the laser light L is aligned with the inside of the SiC substrate 12, and the laser beam L is irradiated onto the object 1 along the line to cut 5a (5 m). Thereby, the modified region 7a (7m) as the cutting start point is formed inside the SiC substrate 12 along the line to cut 5a (5 m). The modified region 7a (7m) is a molten processed region. After the modified region 7a (7m) is formed along the line to cut 5a (5m), the object 1 is cut along the line to cut 5a (5m) with the modified region 7a (7m) as a starting point.
依據以上的雷射加工方法,基於如下的理由,可將具備六方晶系SiC基板12(具有與c面形成偏離角度的表面12a)之板狀的加工對象物1沿著切斷預定線5a,5m予以高精度地切斷,結果可獲得沿著切斷預定線5a,5m被高精度地切斷後之加工對象物1(亦即,功率元件)。 According to the above-described laser processing method, the plate-shaped object 1 having the hexagonal SiC substrate 12 (having the surface 12a having an angle deviated from the c-plane) can be along the line to cut 5a. 5 m is cut with high precision, and as a result, the object 1 to be processed (that is, the power element) which is cut with high precision along the line to cut 5a and 5 m can be obtained.
亦即,要沿著切斷預定線5a(5m)在SiC基板12內 部形成改質區域7a(7m)時,已沿著各預備線5p在SiC基板12內部形成有預備改質區域7p。而且,預備線5p是在與表面12a平行的面內位於切斷預定線5a(5m)的兩側且朝向與切斷預定線5a(5m)平行的方向延伸。因此,即使龜裂從改質區域7a(7m)朝c面方向伸展,比起第34(b)圖所示之未形成預備改質區域7p的情況,如第34(a)圖所示般,該龜裂(c面裂痕)的伸展會被預備改質區域7p抑制住。如此,不須考慮龜裂是否容易從改質區域7a(7m)朝c面方向伸展,就能以讓龜裂容易從改質區域7a(7m)朝SiC基板12的厚度方向伸展的方式將雷射光照射於加工對象物1。又預備改質區域7p,由於不須發揮作為切斷起點的作用(亦即,促進從預備改質區域7p朝SiC基板12的厚度方向之龜裂伸展),能以不容易在SiC基板12發生龜裂的方式照射雷射光L而形成,因此在形成預備改質區域7p時,容易抑制從預備改質區域7p朝c面方向之龜裂伸展。如此,能夠將具備六方晶系SiC基板12(具有與c面形成偏離角度的主面)之板狀的加工對象物沿著切斷預定線5a(5m)予以高精度地切斷。 That is, it is to be in the SiC substrate 12 along the cutting planned line 5a (5 m). When the modified region 7a (7 m) is formed in the portion, the preliminary modified region 7p is formed inside the SiC substrate 12 along each of the preliminary lines 5p. Further, the preliminary line 5p is located on both sides of the planned cutting line 5a (5m) in a plane parallel to the surface 12a and extends in a direction parallel to the planned cutting line 5a (5m). Therefore, even if the crack extends from the modified region 7a (7m) in the c-plane direction, the case where the preliminary modified region 7p is not formed as shown in Fig. 34(b) is as shown in Fig. 34(a). The extension of the crack (c-crack) is suppressed by the preparatory modified region 7p. In this way, it is possible to make the crack easily extend from the modified region 7a (7 m) toward the thickness direction of the SiC substrate 12 without considering whether the crack is easily extended from the modified region 7a (7 m) toward the c-plane direction. The emitted light is irradiated onto the object 1 to be processed. Further, since the modified region 7p is not required to function as a cutting start point (that is, it promotes crack propagation from the preliminary modified region 7p toward the thickness direction of the SiC substrate 12), it is not easy to occur on the SiC substrate 12. Since the crack is formed by irradiating the laser light L, it is easy to suppress the crack extension from the preliminary modified region 7p toward the c-plane direction when the preliminary modified region 7p is formed. In this way, the object to be processed having a plate-like shape of the hexagonal SiC substrate 12 (having a main surface that is offset from the c-plane) can be cut with high precision along the line to cut 5a (5 m).
此外,當形成改質區域7a(7m)時是讓雷射光L的聚光點P對準離SiC基板12之雷射光入射面(表面12a)既定距離的情況,在形成預備改質區域7p時也是,較佳為讓雷射光L的聚光點P對準離表面12a同樣的距離。如此,可更確實地抑制從改質區域7a(7m)朝c面方向之 龜裂伸展。 Further, when the modified region 7a (7m) is formed, the condensed spot P of the laser light L is aligned with a predetermined distance from the laser light incident surface (surface 12a) of the SiC substrate 12, and when the preliminary modified region 7p is formed Also, it is preferable that the condensed spot P of the laser light L is aligned at the same distance from the surface 12a. In this way, it is possible to more reliably suppress the direction from the modified region 7a (7m) toward the c-plane. Cracks stretch.
又當沿著各預備線5p在SiC基板12內部形成預備改質區域7p時,同時也沿著設定在該等預備線5p間之切斷預定線5a(5m)而在SiC基板12內部形成改質區域7a(7m)的情況,仍能利用預備改質區域7p來抑制c面裂痕的伸展。在此情況,相較於沿著切斷預定線5a(5m)之改質區域7a(7m)的形成,較佳為讓沿著預備線5p之預備改質區域7p的形成先進行。 Further, when the preliminary modified region 7p is formed inside the SiC substrate 12 along each of the standby lines 5p, the cut line 5a (5 m) set between the preliminary lines 5p is also formed inside the SiC substrate 12. In the case of the mass region 7a (7 m), the pre-modified region 7p can still be used to suppress the stretching of the c-plane crack. In this case, it is preferable to form the preliminary modified region 7p along the preliminary line 5p first in comparison with the formation of the modified region 7a (7m) along the line to cut 5a (5 m).
依據本發明,能夠將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物沿著切斷預定線予以高精度地切斷。 According to the present invention, it is possible to cut the object to be processed in a plate shape having a hexagonal SiC substrate (having a main surface which is offset from the c-plane) along the line to cut with high precision.
1‧‧‧加工對象物 1‧‧‧Processing objects
5a,5m‧‧‧切斷預定線 5a, 5m‧‧‧ cut-off line
5p‧‧‧預備線 5p‧‧‧Preparation line
7a,7m‧‧‧改質區域 7a, 7m‧‧‧ modified area
7p‧‧‧預備改質區域 7p‧‧‧Prepared modified area
12‧‧‧SiC基板 12‧‧‧ SiC substrate
12a‧‧‧表面(主面) 12a‧‧‧Surface (main surface)
12b‧‧‧背面(主面) 12b‧‧‧Back (main side)
L‧‧‧雷射光 L‧‧‧Laser light
P‧‧‧聚光點 P‧‧‧ spotlight
第1圖係形成改質區域所使用的雷射加工裝置之構造圖。 Fig. 1 is a structural view of a laser processing apparatus used to form a modified region.
第2圖係雷射加工前的加工對象物之俯視圖。 Fig. 2 is a plan view of the object to be processed before laser processing.
第3圖係沿著第2圖的加工對象物之III-III線的截面圖。 Fig. 3 is a cross-sectional view taken along line III-III of the object to be processed in Fig. 2 .
第4圖係雷射加工後的加工對象物之俯視圖。 Fig. 4 is a plan view of the object to be processed after laser processing.
第5圖係沿著第4圖的加工對象物之V-V線的截面圖。 Fig. 5 is a cross-sectional view taken along line V-V of the object of Fig. 4;
第6圖係沿著第4圖的加工對象物之VI-VI線的截面圖。 Fig. 6 is a cross-sectional view taken along line VI-VI of the object of Fig. 4;
第7圖係作為本發明一實施方式之雷射加工方法的對 象之加工對象物的俯視圖。 Figure 7 is a pair of laser processing methods as an embodiment of the present invention. A top view of the object to be processed.
第8圖係顯示第7圖的加工對象物之結晶構造。 Fig. 8 is a view showing the crystal structure of the object to be processed in Fig. 7.
第9(a)(b)圖係第7圖的加工對象物之局部截面圖。 Fig. 9(a)(b) is a partial cross-sectional view of the object to be processed in Fig. 7.
第10圖係實施本發明一實施方式之雷射加工方法的加工對象物之局部截面圖。 Fig. 10 is a partial cross-sectional view showing an object to be processed which is subjected to a laser processing method according to an embodiment of the present invention.
第11(a)(b)圖係實施本發明一實施方式之雷射加工方法的加工對象物之局部截面圖。 11(a) and (b) are partial cross-sectional views of the object to be processed which is subjected to the laser processing method according to the embodiment of the present invention.
第12(a)(b)圖係實施本發明一實施方式之雷射加工方法的加工對象物之局部截面圖。 Fig. 12 (a) and (b) are partial cross-sectional views showing an object to be processed which is subjected to the laser processing method according to the embodiment of the present invention.
第13(a)(b)圖係實施本發明一實施方式之雷射加工方法的加工對象物之局部截面圖。 Fig. 13 (a) and (b) are partial cross-sectional views of the object to be processed which is subjected to the laser processing method according to the embodiment of the present invention.
第14圖係顯示藉由本發明一實施方式的雷射加工方法切斷後之SiC基板的切斷面之相片。 Fig. 14 is a photograph showing a cut surface of a SiC substrate cut by a laser processing method according to an embodiment of the present invention.
第15圖係顯示藉由本發明一實施方式的雷射加工方法切斷後之SiC基板的切斷面之相片。 Fig. 15 is a photograph showing a cut surface of a SiC substrate cut by a laser processing method according to an embodiment of the present invention.
第16圖係顯示藉由本發明一實施方式的雷射加工方法切斷後之SiC基板的平面相片。 Fig. 16 is a plan view showing a SiC substrate cut by a laser processing method according to an embodiment of the present invention.
第17圖係用來說明SiC基板的內部所發生的c面裂痕之立體圖。 Fig. 17 is a perspective view for explaining a c-plane crack occurring inside the SiC substrate.
第18圖係發生c面裂痕之SiC基板的切斷面之相片。 Figure 18 is a photograph of the cut surface of the SiC substrate on which the c-plane crack occurred.
第19圖係顯示脈衝寬、ID臨限值、HC臨限值及加工裕度的關係表。 Figure 19 shows a table showing the relationship between pulse width, ID threshold, HC threshold, and processing margin.
第20圖係顯示脈衝節距、ID臨限值、HC臨限值及加工裕度的關係表。 Figure 20 shows the relationship between pulse pitch, ID threshold, HC threshold, and machining margin.
第21圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 21 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第22圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 22 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第23圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 23 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第24圖係顯示脈衝節距和HC臨限值的關係。 Figure 24 shows the relationship between pulse pitch and HC threshold.
第25圖係顯示脈衝節距和ID臨限值的關係。 Figure 25 shows the relationship between pulse pitch and ID threshold.
第26圖係顯示脈衝節距和加工裕度的關係。 Figure 26 shows the relationship between pulse pitch and machining margin.
第27圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 27 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第28圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 28 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第29圖係顯示脈衝寬及脈衝節距的加工裕度實驗結果之表。 Figure 29 is a table showing experimental results of processing margins for pulse width and pulse pitch.
第30圖係顯示脈衝節距和HC臨限值的關係。 Figure 30 shows the relationship between pulse pitch and HC threshold.
第31圖係顯示在雷射光入射面附近之HC品質的加工裕度實驗結果之表。 Figure 31 is a table showing experimental results of processing margins of HC quality near the incident surface of the laser light.
第32圖係顯示在雷射光入射面附近之HC品質的加工裕度實驗結果之表。 Figure 32 is a table showing experimental results of processing margins of HC quality near the incident surface of the laser light.
第33圖係顯示在雷射光入射面附近之HC品質的加工裕度實驗結果之表。 Figure 33 is a table showing experimental results of processing margins of HC quality near the incident surface of the laser light.
第34(a)(b)圖係用來說明本發明的其他實施方式的雷射加工方法之俯視圖。 Fig. 34 (a) and (b) are plan views for explaining a laser processing method according to another embodiment of the present invention.
1‧‧‧加工對象物 1‧‧‧Processing objects
5a,5m‧‧‧切斷預定線 5a, 5m‧‧‧ cut-off line
7a,7m‧‧‧改質區域 7a, 7m‧‧‧ modified area
12‧‧‧SiC基板 12‧‧‧ SiC substrate
12a‧‧‧表面(主面) 12a‧‧‧Surface (main surface)
12b‧‧‧背面(主面) 12b‧‧‧Back (main side)
23‧‧‧擴展膠帶 23‧‧‧Expansion tape
L‧‧‧雷射光 L‧‧‧Laser light
P‧‧‧聚光點 P‧‧‧ spotlight

Claims (3)

  1. 一種雷射加工方法,是將具備六方晶系SiC基板(具有與c面形成偏離角度的主面)之板狀的加工對象物,分別沿著朝與前述主面及a面平行的方向延伸之第1切斷預定線以及朝與前述主面及m面平行的方向延伸之第2切斷預定線進行切斷之雷射加工方法;該雷射加工方法具備第1步驟及第2步驟;該第1步驟,是讓雷射光的聚光點對準前述SiC基板的內部,沿著前述第1切斷預定線將前述雷射光照射於前述加工對象物,藉此沿著前述第1切斷預定線將作為切斷起點之第1改質區域形成於前述SiC基板的內部,以沿前述SiC基板的厚度方向排列的方式對於1條前述第1切斷預定線形成複數列的前述第1改質區域;該第2步驟,是讓前述聚光點對準前述SiC基板的內部,沿著前述第2切斷預定線將前述雷射光照射於前述加工對象物,藉此沿著前述第2切斷預定線將作為切斷起點之第2改質區域形成於前述SiC基板的內部,以沿前述SiC基板的厚度方向排列的方式對於1條前述第2切斷預定線形成複數列的前述第2改質區域;在前述第1步驟,是以離前述SiC基板之雷射光入射面第2近的前述第1改質區域比離前述雷射光入射面最近的前述第1改質區域更小的方式,依離前述雷射光入射面從遠到近的順序形成前述第1改質區域;在前述第2步驟,是以離前述雷射光入射面最近的前 述第2改質區域比離前述雷射光入射面第2近的前述第2改質區域更小的方式,依離前述雷射光入射面從遠到近的順序形成前述第2改質區域。 A laser processing method is a plate-shaped object to be processed having a hexagonal SiC substrate (having a main surface that is offset from the c-plane), and extends in a direction parallel to the main surface and the a-plane. a laser cutting method for cutting a first cutting planned line and a second cutting planned line extending in a direction parallel to the main surface and the m-plane; the laser processing method includes a first step and a second step; In the first step, the light-converging point of the laser light is aligned with the inside of the SiC substrate, and the laser beam is irradiated onto the object to be processed along the first line to cut, thereby following the first cutting schedule. The first modified region which is the starting point of the cutting is formed in the inside of the SiC substrate, and the first modified first plurality of rows are formed on one of the first planned cutting lines so as to be aligned in the thickness direction of the SiC substrate. In the second step, the condensing point is aligned with the inside of the SiC substrate, and the laser light is irradiated onto the object to be processed along the second line to cut, thereby cutting along the second cutting line. The scheduled line will serve as the second modification of the starting point The second modified region is formed in a plurality of rows in the first SiC substrate so as to be aligned in the thickness direction of the SiC substrate; and in the first step, The first modified region in which the laser light incident surface of the SiC substrate is second is smaller than the first modified region closest to the incident surface of the laser light, and is distant from the far side to the incident surface of the laser light. Forming the first modified region in sequence; in the second step, the front is the closest to the incident surface of the laser light The second modified region is formed such that the second modified region is smaller than the second modified region that is closer to the second incident light incident surface, and the second modified region is formed from the far side to the near side of the laser light incident surface.
  2. 如申請專利範圍第1項所述之雷射加工方法,其中,在前述第1步驟及前述第2步驟之後進一步具備第3步驟;該第3步驟,是以前述第1改質區域為起點而沿著前述第1切斷預定線將前述加工對象物切斷,並以前述第2改質區域為起點而沿著前述第2切斷預定線將前述加工對象物切斷。 The laser processing method according to claim 1, further comprising a third step after the first step and the second step; wherein the third step is based on the first modified region The object to be processed is cut along the first line to be cut, and the object to be processed is cut along the second line to cut along the second modified region as a starting point.
  3. 如申請專利範圍第1或2項所述之雷射加工方法,其中,前述第1改質區域及前述第2改質區域是包含熔融處理區域。 The laser processing method according to claim 1 or 2, wherein the first modified region and the second modified region include a molten processed region.
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