TWI526306B - A laminated body, a panel for a display device with a support plate, a display panel, and a display device - Google Patents

A laminated body, a panel for a display device with a support plate, a display panel, and a display device Download PDF

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Publication number
TWI526306B
TWI526306B TW100138337A TW100138337A TWI526306B TW I526306 B TWI526306 B TW I526306B TW 100138337 A TW100138337 A TW 100138337A TW 100138337 A TW100138337 A TW 100138337A TW I526306 B TWI526306 B TW I526306B
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Taiwan
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resin layer
substrate
metal oxide
oxide film
conductive metal
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TW100138337A
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Chinese (zh)
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TW201219207A (en
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Kenichi Ebata
Yoshitaka Matsuyama
Daisuke Uchida
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Asahi Glass Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10165Functional features of the laminated safety glass or glazing
    • B32B17/10174Coatings of a metallic or dielectric material on a constituent layer of glass or polymer
    • B32B17/10201Dielectric coatings
    • B32B17/10211Doped dielectric layer, electrically conductive, e.g. SnO2:F
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10798Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing silicone
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/20Inorganic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/26Polymeric coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/40Properties of the layers or laminate having particular optical properties
    • B32B2307/412Transparent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/12Photovoltaic modules
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202LCD, i.e. liquid crystal displays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206Organic displays, e.g. OLED

Description

積層體、附有支持板之顯示裝置用面板、顯示裝置用面板及顯示裝置Multilayer body, panel for display device with support plate, panel for display device, and display device

本發明係關於一種積層體、附有支持板之顯示裝置用面板、顯示裝置用面板及顯示裝置。The present invention relates to a laminated body, a panel for a display device with a support plate, a panel for a display device, and a display device.

近年來,太陽電池(PV)、液晶顯示器(LCD)、有機EL顯示器(OLED)等器件(電子機器)之薄型化、輕量化不斷發展,且該等器件中所使用之基板不斷薄板化。若因薄板化而基板之強度不充分,則於器件之製造步驟中,基板之操作性下降。In recent years, thinner and lighter devices (electronic devices) such as solar cells (PV), liquid crystal displays (LCDs), and organic EL displays (OLEDs) have been developed, and substrates used in such devices have been continuously thinned. If the strength of the substrate is insufficient due to thinning, the handleability of the substrate is lowered in the manufacturing process of the device.

因此,自先前以來,廣泛採用在厚於最終厚度之基板上形成器件用構件(例如薄膜電晶體)後,藉由化學蝕刻處理使基板薄板化之方法。然而於該方法中,例如於將一片基板之厚度自0.7 mm薄板化至0.2 mm或0.1 mm之情形時,需以蝕刻液削去原來之基板之材料的大半,故而就生產性或原材料之使用效率之觀點而言不佳。Therefore, a method of thinning a substrate by a chemical etching treatment after forming a device member (for example, a thin film transistor) on a substrate thicker than the final thickness has been widely used. However, in this method, for example, when the thickness of one substrate is thinned from 0.7 mm to 0.2 mm or 0.1 mm, most of the material of the original substrate needs to be removed by the etching liquid, so that the use of productivity or raw materials is required. The point of view of efficiency is not good.

又,上述利用化學蝕刻而使基板薄板化之方法中,於基板表面存在微細之劃痕之情形時,存在藉由蝕刻處理以劃痕為起點而形成微細之凹部(蝕孔),成為光學缺陷之情況。Further, in the method of thinning the substrate by chemical etching, when there is a fine scratch on the surface of the substrate, a fine concave portion (etching hole) is formed by scratching from the etching process to become an optical defect. The situation.

最近,為應對上述課題,提出準備將基板與加強板積層之積層體,於積層體之基板上形成器件用構件後,自基板剝離加強板之方法(例如參照專利文獻1)。加強板係包含玻璃板、及固定於該玻璃板上之樹脂層,樹脂層與基板可剝離地密接。加強板自基板剝離後,可與新的基板積層而作為積層體進行再利用。Recently, in order to cope with the above-mentioned problem, a method of forming a laminate for a substrate and a reinforcing plate, and forming a member for a device on a substrate of a laminate, and then peeling the reinforcing plate from the substrate has been proposed (for example, see Patent Document 1). The reinforcing plate includes a glass plate and a resin layer fixed to the glass plate, and the resin layer and the substrate are detachably adhered to each other. After the reinforcing plate is peeled off from the substrate, it can be laminated with a new substrate to be reused as a laminate.

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1:國際公開第07/018028號Patent Document 1: International Publication No. 07/018028

然而,上述先前之構成之積層體中,存在將加強板自基板剝離時,樹脂層之一部分附著於製品側之基板上的情況。尤其是於高溫條件下對積層體進行加熱處理後,頻繁地發生樹脂層之一部分附著於製品側之基板上的情況。認為其原因在於:於高溫條件下,樹脂層劣化,或者樹脂層與基板之密接強度上升。However, in the laminated body of the above-described prior art, when the reinforcing plate is peeled off from the substrate, one of the resin layers may be partially adhered to the substrate on the product side. In particular, after the laminate is subjected to heat treatment under high temperature conditions, a part of the resin layer is frequently attached to the substrate on the product side. The reason for this is considered to be that the resin layer is deteriorated under high temperature conditions, or the adhesion strength between the resin layer and the substrate is increased.

因此,若將上述積層體應用於實施高溫處理之器件製造中,則有樹脂層之一部分附著於基板上,結果導致良率下降之虞。Therefore, when the laminated body is applied to the device manufacturing for performing high-temperature processing, one of the resin layers is partially adhered to the substrate, and as a result, the yield is lowered.

進而,將基板自上述積層體剝離後,污物或灰塵等容易附著於基板表面,若使用如此之基板製造器件,則有器件產生故障等之虞。認為上述污物或灰塵之附著係由於剝離帶電而產生。Further, after the substrate is peeled off from the laminated body, dirt, dust, or the like easily adheres to the surface of the substrate, and when such a substrate is used to manufacture the device, the device may be defective or the like. It is considered that the adhesion of the above-mentioned dirt or dust is caused by peeling electrification.

本發明係鑒於上述課題而成者,其目的在於提供一種即便是實施高溫加熱處理後,亦可抑制於剝離樹脂層與基板時,樹脂層之一部分附著於製品側之基板上,且可抑制剝離後之基板表面上之剝離帶電的積層體。The present invention has been made in view of the above-described problems, and it is an object of the invention to provide a method of preventing adhesion of a part of a resin layer to a substrate side when a resin layer and a substrate are peeled off even after high-temperature heat treatment. A stripped charged laminate on the surface of the substrate.

進而,本發明之目的在於提供一種包含該積層體之附有支持板之顯示裝置用面板、使用附有支持板之顯示裝置用面板而形成之顯示裝置用面板及顯示裝置。Further, an object of the present invention is to provide a panel for a display device including a support sheet including the laminate, a panel for a display device formed using a panel for a display device with a support panel, and a display device.

本發明者為解決上述課題而反覆專心研究,從而完成本發明。The present inventors have made intensive studies to solve the above problems, and have completed the present invention.

即,為達成上述目的,本發明之第1態樣係一種積層體,其依序包含:支持板;樹脂層;及附有導電性金屬氧化物膜之基板,其係於基板之表面上具有含有選自由銦、錫、鋅、鈦及鎵所組成之群中之至少一種金屬的氧化物之導電性金屬氧化物膜;上述附有導電性金屬氧化物膜之基板係以上述導電性金屬氧化物膜與上述樹脂層可剝離地密接之方式而配置於上述樹脂層上,上述樹脂層與上述支持板間的剝離強度高於上述樹脂層與上述附有導電性金屬氧化物膜之基板間的剝離強度。That is, in order to achieve the above object, a first aspect of the present invention is a laminate comprising, in order, a support plate, a resin layer, and a substrate with a conductive metal oxide film attached to the surface of the substrate. a conductive metal oxide film containing an oxide of at least one selected from the group consisting of indium, tin, zinc, titanium, and gallium; and the substrate with the conductive metal oxide film oxidized by the conductive metal The material film is disposed on the resin layer so as to be in close contact with the resin layer, and the peeling strength between the resin layer and the support sheet is higher than between the resin layer and the substrate with the conductive metal oxide film. Peel strength.

於第1態樣中,較佳為上述氧化物中進而含有選自由鋁、鉬、銅、釩、鈮、鉭、硼及氟所組成之群中之至少一種元素。In the first aspect, it is preferable that the oxide further contains at least one element selected from the group consisting of aluminum, molybdenum, copper, vanadium, niobium, tantalum, boron, and fluorine.

又,於第1態樣中,較佳為上述樹脂層為聚矽氧樹脂層。Further, in the first aspect, it is preferable that the resin layer is a polyoxynitride resin layer.

又,較佳為上述樹脂層包含有機烯基聚矽氧烷與有機氫聚矽氧烷之加成反應型硬化物。Further, it is preferable that the resin layer contains an addition reaction type cured product of an organic alkenyl polysiloxane and an organic hydrogen polyoxyalkylene.

進而,較佳為上述有機氫聚矽氧烷之矽原子上鍵結之氫原子相對於上述有機烯基聚矽氧烷之烯基的莫耳比為0.5~2。Further, it is preferred that the molar ratio of the hydrogen atom bonded to the ruthenium atom of the organohydrogenpolyoxyalkylene to the alkenyl group of the above organic alkenyl polyoxyalkylene is 0.5 to 2.

本發明之第2態樣係一種附有支持板之顯示裝置用面板,其包含:如第1態樣之積層體;及顯示裝置用面板之構成構件,其係設置於上述積層體中之上述附有導電性金屬氧化物膜之基板的與密接上述樹脂層之表面為相反側之表面上。A second aspect of the present invention is a panel for a display device with a support plate, comprising: a laminate according to the first aspect; and a constituent member of the panel for a display device, which is provided in the laminate The substrate on which the conductive metal oxide film is attached is on the surface opposite to the surface on which the resin layer is adhered.

本發明之第3態樣係一種顯示裝置用面板,其係使用如第2態樣之附有支持板之顯示裝置用面板而形成者。According to a third aspect of the invention, there is provided a panel for a display device which is formed by using a panel for a display device with a support plate as in the second aspect.

本發明之第4態樣係一種顯示裝置,其包含如第3態樣之顯示裝置用面板。A fourth aspect of the invention is a display device comprising the panel for a display device according to the third aspect.

根據本發明,可提供一種即便是實施高溫加熱處理後,亦可抑制於將樹脂層與基板剝離時樹脂層之一部分附著於製品側之基板上,且可抑制剝離後之基板表面上之剝離帶電的積層體。According to the present invention, it is possible to prevent a part of the resin layer from adhering to the substrate on the side of the product when the resin layer is peeled off from the substrate even after the high-temperature heat treatment is performed, and the peeling electrification on the surface of the substrate after peeling can be suppressed. The layered body.

進而,根據本發明,可提供一種包含該積層體之附有支持板之顯示裝置用面板,使用附有支持板之顯示裝置用面板而形成之顯示裝置用面板及顯示裝置。Further, according to the present invention, it is possible to provide a panel for a display device including a support plate including the laminate, and a panel for a display device and a display device which are formed by using a panel for a display device with a support plate.

以下,參照圖式關於用以實施本發明之形態進行說明,但本發明並不受以下實施形態之限制,可於不脫離本發明之範圍之前提下,對以下實施形態施加各種變形及替換。In the following, the embodiments of the present invention are described with reference to the accompanying drawings. However, the present invention is not limited by the following embodiments, and various modifications and substitutions are possible in the following embodiments without departing from the scope of the invention.

再者,於本發明中,所謂將樹脂層固定於支持板上,係指以樹脂層與支持板間的剝離強度高於樹脂層與附有導電性金屬氧化物膜之基板間的剝離強度之方式而結合。Further, in the present invention, the fixing of the resin layer to the support plate means that the peeling strength between the resin layer and the support plate is higher than the peel strength between the resin layer and the substrate with the conductive metal oxide film. Combine the way.

圖1係本發明之積層體之一例的示意性剖面圖。Fig. 1 is a schematic cross-sectional view showing an example of a laminate of the present invention.

如圖1所示,積層體10為於附有導電性金屬氧化物膜之基板24與支持板31之間存在樹脂層32之積層體。As shown in FIG. 1, the laminated body 10 is a laminated body in which the resin layer 32 exists between the substrate 24 with a conductive metal oxide film and the support plate 31.

附有導電性金屬氧化物膜之基板24包含基板20、及設置於基板20之表面上之導電性金屬氧化物膜22。附有導電性金屬氧化物膜之基板24係以導電性金屬氧化物膜22與樹脂層32可剝離地密接之方式配置於樹脂層32上。The substrate 24 with the conductive metal oxide film includes a substrate 20 and a conductive metal oxide film 22 provided on the surface of the substrate 20. The substrate 24 with the conductive metal oxide film is disposed on the resin layer 32 such that the conductive metal oxide film 22 and the resin layer 32 are in close contact with each other.

又,樹脂層32固定於支持板31上,且與附有導電性金屬氧化物膜之基板24的導電性金屬氧化物膜22可剝離地密接。包含支持板31及樹脂層32之加強板30於製造液晶顯示器等器件(電子機器)之步驟中,對附有導電性金屬氧化物膜之基板24予以加強。Further, the resin layer 32 is fixed to the support plate 31, and is in close contact with the conductive metal oxide film 22 of the substrate 24 to which the conductive metal oxide film is attached. The reinforcing plate 30 including the support plate 31 and the resin layer 32 reinforces the substrate 24 with the conductive metal oxide film in the step of manufacturing a device (electronic device) such as a liquid crystal display.

該積層體10係使用至器件之製造步驟之中途為止。即,該積層體10係使用至在附有導電性金屬氧化物膜之基板24的與樹脂層32為相反側之表面上形成薄膜電晶體等器件用構件為止。其後,將加強板30自附有導電性金屬氧化物膜之基板24上剝離,而不成為構成器件之構件。自附有導電性金屬氧化物膜之基板24上剝離之加強板30可與新的附有導電性金屬氧化物膜之基板24積層,而作為積層體10進行再利用。This laminated body 10 is used until the middle of the manufacturing process of the device. In other words, the laminated body 10 is used until a device member such as a thin film transistor is formed on the surface of the substrate 24 with the conductive metal oxide film on the side opposite to the resin layer 32. Thereafter, the reinforcing plate 30 is peeled off from the substrate 24 to which the conductive metal oxide film is attached, and does not become a member constituting the device. The reinforcing plate 30 peeled off from the substrate 24 to which the conductive metal oxide film is attached can be laminated with the new substrate 24 with the conductive metal oxide film, and reused as the laminated body 10.

於本發明中,發現藉由以導電性金屬氧化物膜22與樹脂層32接觸之方式,將附有導電性金屬氧化物膜之基板24設置於樹脂層32上,可獲得所期望之效果。In the present invention, it has been found that the substrate 24 with the conductive metal oxide film attached thereon is provided on the resin layer 32 so that the conductive metal oxide film 22 is in contact with the resin layer 32, whereby a desired effect can be obtained.

以下,對各構成(附有導電性金屬氧化物膜之基板、支持板、樹脂層)進行詳細說明。Hereinafter, each configuration (substrate, support plate, and resin layer with a conductive metal oxide film) will be described in detail.

<附有導電性金屬氧化物膜之基板><Substrate with conductive metal oxide film>

首先,對附有導電性金屬氧化物膜之基板24進行說明。First, the substrate 24 with the conductive metal oxide film attached will be described.

附有導電性金屬氧化物膜之基板24包含基板20、及設置於基板20之表面上的導電性金屬氧化物膜22。導電性金屬氧化物膜22係以與後述之樹脂層32可剝離地密接之方式,配置於附有導電性金屬氧化物膜之基板24中之最表面。The substrate 24 with the conductive metal oxide film includes a substrate 20 and a conductive metal oxide film 22 provided on the surface of the substrate 20. The conductive metal oxide film 22 is disposed on the outermost surface of the substrate 24 on which the conductive metal oxide film is attached so as to be in close contact with the resin layer 32 to be described later.

以下對基板20、及導電性金屬氧化物膜22進行詳細說明。The substrate 20 and the conductive metal oxide film 22 will be described in detail below.

(基板)(substrate)

基板20於樹脂層32側之第1主面201上具有導電性金屬氧化物膜22,於與樹脂層32為相反側之第2主面202上形成器件用構件而構成器件。此處,所謂器件用構件,係指如後述之顯示裝置用面板之構成構件之類的構成器件之至少一部分之構件。作為具體例,可列舉:薄膜電晶體(TFT)、彩色濾光片(CF)。作為器件,可例示太陽電池(PV)、液晶顯示器(LCD)、有機EL顯示器(OLED)等。The substrate 20 has a conductive metal oxide film 22 on the first main surface 201 on the resin layer 32 side, and a device member is formed on the second main surface 202 on the opposite side to the resin layer 32 to form a device. Here, the member for a device refers to a member constituting at least a part of a device such as a constituent member of a panel for a display device to be described later. Specific examples include a thin film transistor (TFT) and a color filter (CF). As the device, a solar cell (PV), a liquid crystal display (LCD), an organic EL display (OLED), or the like can be exemplified.

關於基板20之種類,可為普通基板,例如可為矽晶圓、玻璃基板、樹脂基板、SUS基板或銅基板等金屬基板。於該等之中,較佳為玻璃基板。係因為玻璃基板之耐化學品性、耐透濕性優異,且熱收縮率較低之故。作為熱收縮率之指標,可使用於JIS R 3102(1995年修正)中規定之線膨脹係數。The type of the substrate 20 may be a general substrate, and may be, for example, a metal substrate such as a germanium wafer, a glass substrate, a resin substrate, an SUS substrate, or a copper substrate. Among these, a glass substrate is preferred. The glass substrate is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage rate. As an index of the heat shrinkage rate, it can be used for the coefficient of linear expansion specified in JIS R 3102 (1995 Revision).

若基板20之線膨脹係數較大,則由於器件之製造步驟伴有加熱處理之情況較多,故而容易產生各種不良情況。例如於基板20上形成TFT之情形時,於使在加熱下形成TFT之基板20冷卻時,有因基板20之熱收縮而使TFT之位置偏移過大之虞。When the linear expansion coefficient of the substrate 20 is large, since the manufacturing process of the device is accompanied by heat treatment, various defects are likely to occur. For example, when a TFT is formed on the substrate 20, when the substrate 20 on which the TFT is formed under heating is cooled, there is a possibility that the position of the TFT is excessively shifted due to thermal contraction of the substrate 20.

玻璃基板可藉由使玻璃原料熔融,將熔融玻璃成形為板狀而獲得。此種成形方法可採用通常之方法,例如可採用:浮式法、熔融法、流孔下引法、富可法、魯伯法等。又,厚度特別薄之玻璃基板可藉由將暫時成形為板狀之玻璃加熱至可成形溫度,利用延伸等方法進行拉伸而使其變薄之方法(再曳引法)予以成形而獲得。The glass substrate can be obtained by melting a glass raw material and forming the molten glass into a plate shape. Such a forming method can be carried out by a usual method, for example, a floating method, a melting method, a flow hole down method, a rich method, a Luber method, or the like. Further, the glass substrate having a particularly small thickness can be obtained by heating a glass which is temporarily formed into a plate shape to a moldable temperature, and stretching and thinning by a method such as stretching (re-drawing method).

玻璃基板之玻璃並無特別限定,較佳為無鹼玻璃、硼矽玻璃、鈉鈣玻璃、高矽玻璃、其他將氧化矽作為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為進行氧化物換算所得之氧化矽之含量為40~90質量%之玻璃。The glass of the glass substrate is not particularly limited, and is preferably an alkali-free glass, a borosilicate glass, a soda lime glass, a sorghum glass, or another oxide-based glass containing cerium oxide as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide in an amount of 40 to 90% by mass in terms of oxide.

作為玻璃基板之玻璃,係採用適合器件之種類或其製造步驟之玻璃。例如,對於液晶顯示器用之玻璃基板,由於鹼金屬成分之溶出容易對液晶造成影響,故而其係包含實質上不含鹼金屬成分之玻璃(無鹼玻璃)。如此,玻璃基板之玻璃係根據所使用之器件之種類及其製造步驟而適當地選擇。As the glass of the glass substrate, a glass suitable for the kind of the device or a manufacturing step thereof is used. For example, in a glass substrate for a liquid crystal display, since the elution of an alkali metal component is likely to affect the liquid crystal, it is a glass (alkali-free glass) which does not substantially contain an alkali metal component. As described above, the glass of the glass substrate is appropriately selected depending on the type of the device to be used and the manufacturing steps thereof.

玻璃基板之厚度並無特別限定,就玻璃基板之薄型化及/或輕量化之觀點而言,通常未達0.8 mm,較佳為0.3 mm以下,進而較佳為0.15 mm以下。於為0.8 mm以上之情形時,無法滿足玻璃基板之薄型化及/或輕量化之要求。於為0.3 mm以下之情形時,可對玻璃基板賦予良好之可撓性。於為0.15 mm以下之情形時,可將玻璃基板捲取為卷軸狀。又,就玻璃基板容易製造、玻璃基板容易操作等理由而言,玻璃基板之厚度較佳為0.03 mm以上。The thickness of the glass substrate is not particularly limited, and is usually less than 0.8 mm, preferably 0.3 mm or less, and more preferably 0.15 mm or less from the viewpoint of thickness reduction and/or weight reduction of the glass substrate. When the thickness is 0.8 mm or more, the requirements for thinning and/or weight reduction of the glass substrate cannot be satisfied. When it is 0.3 mm or less, good flexibility can be imparted to the glass substrate. When it is 0.15 mm or less, the glass substrate can be wound into a reel shape. Further, the thickness of the glass substrate is preferably 0.03 mm or more for the reason that the glass substrate is easily produced and the glass substrate is easily handled.

樹脂基板之樹脂之種類並無特別限定。具體可例示:聚對苯二甲酸乙二酯樹脂、聚碳酸酯樹脂、聚醯亞胺樹脂、氟樹脂、聚醯胺樹脂、芳族聚醯胺樹脂、聚醚碸樹脂、聚醚酮樹脂、聚醚醚酮樹脂、聚萘二甲酸乙二酯樹脂、聚丙烯酸系樹脂、各種液晶聚合物樹脂、環烯烴樹脂、聚矽氧樹脂等。再者,樹脂基板可為透明,亦可為不透明。又,樹脂基板亦可為表面形成有保護層等功能層者。The type of the resin of the resin substrate is not particularly limited. Specific examples thereof include polyethylene terephthalate resin, polycarbonate resin, polyimide resin, fluororesin, polyamide resin, aromatic polyamide resin, polyether oxime resin, polyether ketone resin, Polyetheretherketone resin, polyethylene naphthalate resin, polyacrylic resin, various liquid crystal polymer resins, cycloolefin resins, polyoxyxylene resins, and the like. Further, the resin substrate may be transparent or opaque. Further, the resin substrate may have a functional layer such as a protective layer formed on the surface.

樹脂基板之厚度並無特別限定,就薄型化及/或輕量化之觀點而言,較佳為0.7 mm以下,更佳為0.3 mm以下,尤佳為0.1 mm以下。又,就操作性之觀點而言,較佳為1.0 μm以上。The thickness of the resin substrate is not particularly limited, and is preferably 0.7 mm or less, more preferably 0.3 mm or less, and particularly preferably 0.1 mm or less from the viewpoint of thickness reduction and/or weight reduction. Further, from the viewpoint of workability, it is preferably 1.0 μm or more.

再者,基板20可包含兩層以上,於該情形時,形成各層之材料可為同種材料,亦可為不同種材料。又,於該情形時,「基板20之厚度」係指所有層之合計厚度。Furthermore, the substrate 20 may comprise two or more layers. In this case, the materials forming the layers may be the same material or different materials. Moreover, in this case, "the thickness of the substrate 20" means the total thickness of all the layers.

(導電性金屬氧化物膜)(conductive metal oxide film)

導電性金屬氧化物膜22含有選自由銦、錫、鋅、鈦及鎵所組成之群中之至少一種金屬的氧化物。The conductive metal oxide film 22 contains an oxide of at least one selected from the group consisting of indium, tin, zinc, titanium, and gallium.

例如,於基板20為無鹼玻璃基板之情形時,與該無鹼玻璃基板之表面上所存在之鎂、鈣、鋇等鹼土金屬成分相比,導電性金屬氧化物膜22中所含之上述鹼土金屬成分的電負度較小。因此,與使無鹼玻璃基板與樹脂層32直接接觸而曝露於高溫條件下之情形相比,即便將本發明之積層體10曝露於高溫條件下,導電性金屬氧化物膜22與樹脂層32之間亦不太會因上述鹼土金屬成分脫離而進行化學反應。其結果,可不產生因重剝離化而引起的樹脂層32向附有導電性金屬氧化物膜之基板24上之附著地將附有導電性金屬氧化物膜之基板24剝離。For example, when the substrate 20 is an alkali-free glass substrate, the above-described conductive metal oxide film 22 is contained in comparison with an alkaline earth metal component such as magnesium, calcium or barium present on the surface of the alkali-free glass substrate. The alkaline earth metal component has a small electronegativity. Therefore, the conductive metal oxide film 22 and the resin layer 32 are exposed even when the laminated body 10 of the present invention is exposed to high temperature conditions as compared with the case where the alkali-free glass substrate is directly contacted with the resin layer 32 and exposed to high temperature conditions. It is also less likely that a chemical reaction will occur due to the detachment of the above alkaline earth metal component. As a result, the substrate 24 with the conductive metal oxide film attached thereto is peeled off from adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy peeling.

此處,所謂重剝離化,係指導電性金屬氧化物膜22與樹脂層32之密接強度大於支持板31之表面與樹脂層32之密接強度、及樹脂層32之(主體)強度中之任一者。Here, the term "removal" refers to directing the adhesion strength between the electric metal oxide film 22 and the resin layer 32 to be greater than the adhesion strength between the surface of the support plate 31 and the resin layer 32, and the (main body) strength of the resin layer 32. One.

進而,該導電性金屬氧化物膜22表現出優異之導電性。因此,可抑制剝離後之附有導電性金屬氧化物膜之基板24表面上的剝離帶電。又,若併用靜電消除器(ionizer)或噴霧水,則可進一步抑制剝離帶電。或者,即便減輕靜電消除器或噴霧水之負荷,亦可獲得與先前相同之剝離帶電抑制效果。Further, the conductive metal oxide film 22 exhibits excellent conductivity. Therefore, peeling electrification on the surface of the substrate 24 with the conductive metal oxide film attached after peeling can be suppressed. Further, when an ionizer or spray water is used in combination, peeling electrification can be further suppressed. Alternatively, even if the load of the static eliminator or the spray water is reduced, the same peeling electrification suppression effect as before can be obtained.

導電性金屬氧化物膜22含有選自由銦、錫、鋅、鈦及鎵所組成之群中之至少一種金屬的氧化物。即,導電性金屬氧化物膜22含有包含上述金屬元素與氧元素之金屬氧化物。The conductive metal oxide film 22 contains an oxide of at least one selected from the group consisting of indium, tin, zinc, titanium, and gallium. That is, the conductive metal oxide film 22 contains a metal oxide containing the above-described metal element and oxygen element.

具體可列舉:氧化鈦(TiO2)、氧化銦(In2O3)、氧化錫(SnO2)、氧化鋅(ZnO)、氧化鎵(Ga2O3)等。Specific examples thereof include titanium oxide (TiO 2 ), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), and gallium oxide (Ga 2 O 3 ).

又,導電性金屬氧化物膜22亦可含有包含2種以上之上述列舉之金屬的氧化物。具體可列舉氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋅錫(ZTO)、摻鎵氧化鋅(GZO)等。Further, the conductive metal oxide film 22 may contain an oxide containing two or more kinds of the above-exemplified metals. Specific examples thereof include indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), and gallium-doped zinc oxide (GZO).

上述氧化物中亦可進而含有選自由鋁、鉬、銅、釩、鈮、鉭、硼及氟所組成之群中之至少一種元素。該元素發揮所謂摻雜物之作用。The oxide may further contain at least one element selected from the group consisting of aluminum, molybdenum, copper, vanadium, niobium, tantalum, boron, and fluorine. This element acts as a so-called dopant.

作為含有該元素的上述金屬之氧化物,例如可列舉:摻鋁氧化鋅(AZO)、摻鉬氧化銦(IMO)、摻鈮氧化鈦、摻鉭氧化鈦、摻鈮氧化錫、摻氟氧化錫(FTO)、摻硼氧化鋅(BZO)、摻鋁銅氧化鋅、摻鋁釩氧化鋅、摻鈮鉭氧化錫等。Examples of the oxide of the above metal containing the element include aluminum-doped zinc oxide (AZO), indium-doped indium oxide (IMO), antimony-doped titanium oxide, antimony-doped titanium oxide, antimony-doped tin oxide, and fluorine-doped tin oxide. (FTO), boron-doped zinc oxide (BZO), aluminum-doped copper zinc oxide, aluminum-doped vanadium zinc oxide, antimony-doped tin oxide, and the like.

其中,就附有導電性金屬氧化物膜之基板與樹脂層之剝離性更優異,且導電性更優異之方面而言,較佳為氧化銦錫(ITO)、氧化銦鋅(IZO)、摻鋁氧化鋅(AZO)、摻鎵氧化鋅(GZO)、摻氟氧化錫(FTO)、摻鈮氧化鈦,更佳為氧化銦錫(ITO)、氧化銦鋅(IZO)、摻氟氧化錫(FTO)。Among them, in the case where the substrate with the conductive metal oxide film and the resin layer are more excellent in peelability, and the conductivity is more excellent, indium tin oxide (ITO), indium zinc oxide (IZO), and doping are preferable. Aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), fluorine-doped tin oxide (FTO), antimony-doped titanium oxide, more preferably indium tin oxide (ITO), indium zinc oxide (IZO), fluorine-doped tin oxide ( FTO).

導電性金屬氧化物膜22較佳為含有上述金屬之氧化物作為主成分,具體而言,上述金屬之氧化物之含量相對於導電性金屬氧化物膜總量較佳為98質量%以上,更佳為99質量%以上,尤佳為99.999質量%以上。The conductive metal oxide film 22 preferably contains the oxide of the above metal as a main component. Specifically, the content of the oxide of the metal is preferably 98% by mass or more based on the total amount of the conductive metal oxide film. Preferably, it is 99% by mass or more, and particularly preferably 99.999% by mass or more.

導電性金屬氧化物膜22中亦可於不損及本發明之效果之範圍內含有其他金屬之氧化物。又,導電性金屬氧化物膜22中亦可於不損及本發明之效果之範圍內含有金屬之氧化物以外之成分(例如金屬)。The conductive metal oxide film 22 may contain an oxide of another metal in a range that does not impair the effects of the present invention. Further, the conductive metal oxide film 22 may contain a component (for example, a metal) other than the oxide of the metal within a range that does not impair the effects of the present invention.

導電性金屬氧化物膜22之厚度並無特別限制,就進一步抑制因重剝離化而引起的樹脂層32向附有導電性金屬氧化物膜之基板24上之附著,且維持耐磨性之觀點而言,較佳為5~5000 nm,更佳為10~500 nm。The thickness of the conductive metal oxide film 22 is not particularly limited, and the adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film attached thereto due to heavy peeling is further suppressed, and the wear resistance is maintained. In terms of, it is preferably 5 to 5000 nm, more preferably 10 to 500 nm.

含有上述特定金屬之氧化物的導電性金屬氧化物膜22表現出優異之導電性。更詳細而言,就可進一步抑制剝離後之基板表面上之剝離帶電的觀點而言,導電性金屬氧化物膜22之表面電阻值較佳為0.1~1000 Ω/□,更佳為1~500 Ω/□。再者,測定方法係採用公知之方法(例如於JIS R 1637(1998年制定)中規定之四探針電阻測定法)。The conductive metal oxide film 22 containing the oxide of the above specific metal exhibits excellent conductivity. More specifically, from the viewpoint of further suppressing the peeling electrification on the surface of the substrate after peeling, the surface resistance value of the conductive metal oxide film 22 is preferably from 0.1 to 1000 Ω/□, more preferably from 1 to 500. Ω/□. Further, the measurement method is a known method (for example, a four-probe resistance measurement method prescribed in JIS R 1637 (established in 1998)).

導電性金屬氧化物膜22之與樹脂層32接觸之表面221上存在的極性基之密度是否合適,可藉由在密接前測定表面221之水接觸角而判斷。通常有表面存在之親水性等之極性基之密度越高,則水接觸角越小之傾向。此處,所謂水接觸角,係指於JIS R 3257(1999年制定)中規定之接觸角。Whether or not the density of the polar group present on the surface 221 of the conductive metal oxide film 22 in contact with the resin layer 32 is appropriate can be judged by measuring the water contact angle of the surface 221 before the adhesion. Generally, the higher the density of the polar group such as the hydrophilicity of the surface, the lower the water contact angle. Here, the water contact angle means a contact angle defined in JIS R 3257 (established in 1999).

就進一步抑制因重剝離化而引起的樹脂層32向附有導電性金屬氧化物膜之基板24上之附著的觀點而言,導電性金屬氧化物膜22之表面221之密接前的水接觸角較佳為20°以上,更佳為30~90°,進而較佳為40~70°。The water contact angle before the adhesion of the surface 221 of the conductive metal oxide film 22 to the viewpoint of adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy peeling is further suppressed. It is preferably 20 or more, more preferably 30 to 90, and still more preferably 40 to 70.

亦可於導電性金屬氧化物膜22之與樹脂層32接觸之側的表面221上預先形成微細之凹凸結構。於該情形時,凹凸結構之程度較佳為在下述範圍內,即不會使導電性金屬氧化物膜22之表面221與樹脂層32之密接面321因投錨效應而重剝離化,從而產生樹脂層32向附有導電性金屬氧化物膜之基板24上之過度附著的範圍內。A fine uneven structure may be formed in advance on the surface 221 of the conductive metal oxide film 22 on the side in contact with the resin layer 32. In this case, the degree of the uneven structure is preferably within a range in which the surface 221 of the conductive metal oxide film 22 and the adhesion surface 321 of the resin layer 32 are not peeled off by the anchoring effect, thereby producing a resin. The layer 32 is in the range of excessive adhesion on the substrate 24 to which the conductive metal oxide film is attached.

再者,導電性金屬氧化物膜22之表面221之表面粗糙度(Ra)較佳為0.1~50 nm,更佳為0.5~5 nm。Ra係根據JIS B 0601(2001年修正)而進行測定。Further, the surface roughness (Ra) of the surface 221 of the conductive metal oxide film 22 is preferably from 0.1 to 50 nm, more preferably from 0.5 to 5 nm. The Ra system was measured in accordance with JIS B 0601 (corrected in 2001).

對於導電性金屬氧化物膜22,考慮到將附有導電性金屬氧化物膜之基板24用於器件用途之方面,導電性金屬氧化物膜22較佳為透明。具體而言,較佳為於波長380~780 nm下之透射率、即附有導電性金屬氧化物膜之基板24之可見光透射率為70%以上,更佳為80%以上。In the conductive metal oxide film 22, the conductive metal oxide film 22 is preferably transparent in view of the use of the substrate 24 with the conductive metal oxide film for the device. Specifically, the transmittance at a wavelength of 380 to 780 nm, that is, the visible light transmittance of the substrate 24 with the conductive metal oxide film is preferably 70% or more, and more preferably 80% or more.

導電性金屬氧化物膜22於圖1中係記載為單層,但亦可為兩層以上之積層。例如,於導電性金屬氧化物膜為兩層之情形時,係設置與基板20接觸之第1導電性金屬氧化物膜、及設於第1導電性金屬氧化物膜上之第2導電性金屬氧化物層。於為兩層之情形時,第1導電性金屬氧化物膜與第2導電性金屬氧化物膜之成分亦可不同。The conductive metal oxide film 22 is described as a single layer in FIG. 1, but may be a laminate of two or more layers. For example, when the conductive metal oxide film is two layers, the first conductive metal oxide film that is in contact with the substrate 20 and the second conductive metal that is provided on the first conductive metal oxide film are provided. Oxide layer. In the case of two layers, the components of the first conductive metal oxide film and the second conductive metal oxide film may be different.

導電性金屬氧化物膜22亦可於不損及本發明之效果之範圍內,設置於基板20表面上之一部分。例如,導電性金屬氧化物膜22亦可於基板20表面上設置為島狀或條紋狀。The conductive metal oxide film 22 may be provided on one portion of the surface of the substrate 20 within a range that does not impair the effects of the present invention. For example, the conductive metal oxide film 22 may be provided in an island shape or a stripe shape on the surface of the substrate 20.

更詳細而言,關於導電性金屬氧化物膜22於基板20表面上之被覆率,就進一步抑制因重剝離化而引起的樹脂層32向附有導電性金屬氧化物膜之基板24上之附著的觀點而言,較佳為50~100%,更佳為75~100%。More specifically, the coverage of the conductive metal oxide film 22 on the surface of the substrate 20 further suppresses adhesion of the resin layer 32 to the substrate 24 with the conductive metal oxide film due to heavy peeling. From the viewpoint, it is preferably 50 to 100%, more preferably 75 to 100%.

(導電性金屬氧化物膜之製造方法)(Method of Manufacturing Conductive Metal Oxide Film)

導電性金屬氧化物膜22之製造方法並無特別限制,可採用公知之方法。例如可列舉藉由蒸鍍法或濺鍍法,於基板20上設置特定之金屬氧化物的方法。The method for producing the conductive metal oxide film 22 is not particularly limited, and a known method can be employed. For example, a method of providing a specific metal oxide on the substrate 20 by a vapor deposition method or a sputtering method can be cited.

製造條件係根據所使用之金屬之氧化物而適宜地選擇最適合之條件。The manufacturing conditions are appropriately selected depending on the oxide of the metal to be used.

附有導電性金屬氧化物膜之基板24係包含上述基板20與導電性金屬氧化物膜22,但亦可於不損及本發明之效果之範圍內,於基板20與導電性金屬氧化物膜22間包含其他構件。The substrate 24 with the conductive metal oxide film includes the substrate 20 and the conductive metal oxide film 22, but the substrate 20 and the conductive metal oxide film may be formed within a range that does not impair the effects of the present invention. 22 rooms contain other components.

作為其他構件,例如可列舉:防止鹼離子自基板20向導電性金屬氧化物膜22中擴散之阻鹼層,使導電性金屬氧化物膜22之表面平坦化之平坦化層等。The other member may, for example, be a flattening layer that prevents alkali ions from diffusing from the substrate 20 into the conductive metal oxide film 22, and a flattening layer that planarizes the surface of the conductive metal oxide film 22.

<支持板><Support Board>

支持板31與樹脂層32協作而支持並加強附有導電性金屬氧化物膜之基板24,於器件之製造步驟中防止附有導電性金屬氧化物膜之基板24產生變形、損傷、破損等。又,於使用厚度較先前薄之附有導電性金屬氧化物膜之基板24之情形時,藉由製成厚度與先前之基板相同之積層體10,而使得於器件之製造步驟中可使用適合先前之厚度之基板的製造技術或製造設備亦係使用支持板31之目的之一。The support plate 31 cooperates with the resin layer 32 to support and reinforce the substrate 24 with the conductive metal oxide film, and prevents deformation, damage, breakage, and the like of the substrate 24 with the conductive metal oxide film attached in the manufacturing process of the device. Further, in the case where the substrate 24 with the conductive metal oxide film having a smaller thickness than the previous one is used, by forming the laminated body 10 having the same thickness as the previous substrate, it is possible to use it in the manufacturing steps of the device. The manufacturing technique or manufacturing equipment of the substrate of the previous thickness is also one of the purposes of using the support plate 31.

作為支持板31,例如可使用玻璃板、樹脂板、SUS板等金屬板等。於器件之製造步驟伴有熱處理之情形時,支持板31較佳為利用與基板20之線膨脹係數之差較小的材料而形成,更佳為利用與基板20相同之材料而形成。於基板20為玻璃基板之情形時,支持板31較佳為玻璃板。尤佳為支持板31為由與基板20之玻璃基板相同之玻璃材料所形成的玻璃板。As the support plate 31, for example, a metal plate such as a glass plate, a resin plate, or a SUS plate can be used. When the manufacturing process of the device is accompanied by heat treatment, the support plate 31 is preferably formed of a material having a small difference in linear expansion coefficient from the substrate 20, and more preferably formed of the same material as the substrate 20. In the case where the substrate 20 is a glass substrate, the support plate 31 is preferably a glass plate. More preferably, the support plate 31 is a glass plate formed of the same glass material as the glass substrate of the substrate 20.

支持板31之厚度可厚於亦可薄於基板20。較佳為根據附有導電性金屬氧化物膜之基板24之厚度、樹脂層32之厚度及積層體10之厚度而選擇支持板31之厚度。例如,現行之器件之製造步驟係設計成處理厚度0.5 mm之基板,於附有導電性金屬氧化物膜之基板24之厚度與樹脂層32之厚度之和為0.1 mm之情形時,將支持板31之厚度設為0.4 mm。於通常之情形時,支持板31之厚度較佳為0.2~5.0 mm。The thickness of the support plate 31 may be thicker or thinner than the substrate 20. It is preferable to select the thickness of the support plate 31 in accordance with the thickness of the substrate 24 with the conductive metal oxide film, the thickness of the resin layer 32, and the thickness of the laminate 10. For example, the manufacturing process of the current device is designed to process a substrate having a thickness of 0.5 mm, and the support plate is used when the sum of the thickness of the substrate 24 with the conductive metal oxide film and the thickness of the resin layer 32 is 0.1 mm. The thickness of 31 is set to 0.4 mm. In the usual case, the thickness of the support plate 31 is preferably 0.2 to 5.0 mm.

於支持板31為玻璃板之情形時,就容易操作、不易破裂等理由而言,玻璃板之厚度較佳為0.08 mm以上。又,就形成器件用構件後進行剝離時,期待可不破裂地適度彎曲之剛性的理由而言,玻璃板之厚度較佳為1.0 mm以下。In the case where the support plate 31 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for reasons of easy handling and difficulty in cracking. In addition, when the member for a device is formed and peeled off, the thickness of the glass plate is preferably 1.0 mm or less for the reason that the rigidity of the member can be appropriately bent without being broken.

基板20與支持板31於25~300℃下之平均線膨脹係數(以下簡稱為「平均線膨脹係數」)之差較佳為500×10-7/℃以下,更佳為300×10-7/℃以下,進而較佳為200×10-7/℃以下。若差過大,則存在於器件之製造步驟中進行加熱、冷卻時,積層體10劇烈地翹曲,或者附有導電性金屬氧化物膜之基板24與加強板30剝離之可能性。於基板20之材料與支持板31之材料相同之情形時,可抑制該等問題產生。The difference between the average linear expansion coefficient of the substrate 20 and the support plate 31 at 25 to 300 ° C (hereinafter simply referred to as "average linear expansion coefficient") is preferably 500 × 10 -7 / ° C or less, more preferably 300 × 10 -7 . / ° C or less, further preferably 200 × 10 -7 / ° C or less. If the difference is too large, the laminate 10 is warped sharply when heated or cooled in the manufacturing step of the device, or the substrate 24 with the conductive metal oxide film is peeled off from the reinforcing plate 30. When the material of the substrate 20 is the same as the material of the support plate 31, the occurrence of such problems can be suppressed.

<樹脂層><Resin layer>

樹脂層32係固定於支持板31上,並且可剝離地密接於附有導電性金屬氧化物膜之基板24上。樹脂層32可於至進行剝離操作為止,防止附有導電性金屬氧化物膜之基板24之位置偏移,且可藉由剝離操作而容易地自附有導電性金屬氧化物膜之基板24上剝離,可防止附有導電性金屬氧化物膜之基板24等由於剝離操作而破損。The resin layer 32 is fixed to the support plate 31, and is detachably adhered to the substrate 24 to which the conductive metal oxide film is attached. The resin layer 32 can prevent the position of the substrate 24 with the conductive metal oxide film attached from being displaced until the peeling operation is performed, and can be easily attached to the substrate 24 on which the conductive metal oxide film is attached by the peeling operation. The peeling prevents the substrate 24 or the like with the conductive metal oxide film attached from being damaged by the peeling operation.

樹脂層32之大小並無特別限定。樹脂層32之大小可大於亦可小於基板20或支持板31。The size of the resin layer 32 is not particularly limited. The resin layer 32 may be larger or smaller than the substrate 20 or the support plate 31.

樹脂層32之與導電性金屬氧化物膜22接觸之表面321(以下亦稱作「密接面321」)較佳為並非藉由如通常之黏著劑所具有之黏著力,而係藉由因固體分子間之凡得瓦力所產生之力而黏貼於導電性金屬氧化物膜22之表面221上。其原因在於如此則可容易地剝離附有導電性金屬氧化物膜之基板24。於本發明中,將該樹脂層表面之可容易地剝離之性質稱作剝離性。The surface 321 of the resin layer 32 that is in contact with the conductive metal oxide film 22 (hereinafter also referred to as the "adhesive surface 321") is preferably not adhered by a usual adhesive, but by solids. The force generated by the intrinsic van der Waals force is adhered to the surface 221 of the conductive metal oxide film 22. The reason for this is that the substrate 24 with the conductive metal oxide film attached can be easily peeled off. In the present invention, the property of easily peeling off the surface of the resin layer is referred to as peelability.

另一方面,樹脂層32對支持板31之表面的結合力相對地高於樹脂層32對附有導電性金屬氧化物膜之基板24之表面(相當於導電性金屬氧化物膜22之表面221)的結合力。因此,樹脂層32與支持板31間的剝離強度高於樹脂層32與附有導電性金屬氧化物膜之基板24間的剝離強度。於本發明中,將樹脂層表面對基板表面之結合稱作密接,將樹脂層表面對支持板表面之結合稱作固定。樹脂層32與支持板31間較佳為以黏著力或接著力結合。然而並非限定於此,只要相對地高於樹脂層32對附有導電性金屬氧化物膜之基板24的結合力,則樹脂層32與支持板31間亦可利用上述因凡得瓦力而產生之力黏貼。On the other hand, the bonding force of the resin layer 32 to the surface of the support plate 31 is relatively higher than the surface of the resin layer 32 to the substrate 24 to which the conductive metal oxide film is attached (corresponding to the surface 221 of the conductive metal oxide film 22) The binding force. Therefore, the peeling strength between the resin layer 32 and the support sheet 31 is higher than the peel strength between the resin layer 32 and the substrate 24 with the conductive metal oxide film attached thereto. In the present invention, the bonding of the surface of the resin layer to the surface of the substrate is referred to as adhesion, and the bonding of the surface of the resin layer to the surface of the support plate is referred to as fixation. Preferably, the resin layer 32 and the support plate 31 are bonded by an adhesive force or an adhesive force. However, the present invention is not limited thereto, and as long as it is relatively higher than the bonding force of the resin layer 32 to the substrate 24 to which the conductive metal oxide film is attached, the resin layer 32 and the support plate 31 may be generated by using the above-described van der Waals force. The force sticks.

樹脂層32之厚度並無特別限定,較佳為1~100 μm,更佳為5~30 μm,進而較佳為7~20 μm。其原因在於若樹脂層32之厚度在上述範圍內,則樹脂層32與附有導電性金屬氧化物膜之基板24之密接變得充分。並且,即便樹脂層32與附有導電性金屬氧化物膜之基板24間介入有氣泡或雜質,亦可抑制附有導電性金屬氧化物膜之基板24產生應變缺陷。又,若樹脂層32之厚度過厚,則形成樹脂層32需要耗費時間及材料,故而不經濟。The thickness of the resin layer 32 is not particularly limited, but is preferably 1 to 100 μm, more preferably 5 to 30 μm, still more preferably 7 to 20 μm. The reason for this is that if the thickness of the resin layer 32 is within the above range, the adhesion between the resin layer 32 and the substrate 24 with the conductive metal oxide film is sufficient. Further, even if bubbles or impurities are interposed between the resin layer 32 and the substrate 24 with the conductive metal oxide film, strain defects can be suppressed from occurring on the substrate 24 with the conductive metal oxide film. Further, if the thickness of the resin layer 32 is too thick, it takes time and material to form the resin layer 32, which is uneconomical.

再者,樹脂層32亦可包含兩層以上。於該情形時,「樹脂層32之厚度」係指所有層之合計厚度。Further, the resin layer 32 may also contain two or more layers. In this case, the "thickness of the resin layer 32" means the total thickness of all the layers.

又,於樹脂層32包含兩層以上之情形時,形成各層之樹脂之種類亦可不同。Further, when the resin layer 32 contains two or more layers, the types of the resins forming the respective layers may be different.

樹脂層32較佳為由玻璃轉移點低於室溫(25℃左右),或不具有玻璃轉移點之材料所形成。其原因在於藉此可成為非黏著性之樹脂層,可更容易地與附有導電性金屬氧化物膜之基板24剝離,同時與附有導電性金屬氧化物膜之基板24之密接亦變得充分。The resin layer 32 is preferably formed of a material having a glass transition point lower than room temperature (about 25 ° C) or having no glass transition point. This is because the non-adhesive resin layer can be more easily peeled off from the substrate 24 with the conductive metal oxide film, and the adhesion to the substrate 24 with the conductive metal oxide film is also formed. full.

又,由於器件之製造步驟中進行加熱處理之情況較多,故而樹脂層32較佳為具有耐熱性。Further, since the heat treatment is often performed in the manufacturing steps of the device, the resin layer 32 preferably has heat resistance.

又,若樹脂層32之彈性模數過高,則存在與附有導電性金屬氧化物膜之基板24之密接性變低之傾向。另一方面,若樹脂層32之彈性模數過低,則剝離性變低。When the elastic modulus of the resin layer 32 is too high, the adhesion to the substrate 24 with the conductive metal oxide film tends to be low. On the other hand, if the elastic modulus of the resin layer 32 is too low, the peelability becomes low.

形成樹脂層32之樹脂之種類並無特別限定。例如可列舉:丙烯酸系樹脂、聚烯烴樹脂、聚胺基甲酸酯樹脂或聚矽氧樹脂。亦可混合若干種類之樹脂使用。其中較佳為聚矽氧樹脂。係由於聚矽氧樹脂之耐熱性或剝離性優異之故。並且,當支持板31為玻璃板時,藉由與玻璃板表面之矽烷醇基之縮合反應而容易固定於玻璃板上。就於聚矽氧樹脂層介設於支持板31與附有導電性金屬氧化物膜之基板24間的狀態下,例如即便於大氣中、200℃左右處理1小時左右,剝離性亦幾乎不劣化之觀點而言,聚矽氧樹脂層亦較佳。The kind of the resin forming the resin layer 32 is not particularly limited. For example, an acrylic resin, a polyolefin resin, a polyurethane resin, or a polyoxyl resin can be mentioned. It can also be mixed with several types of resins. Among them, a polyoxyxylene resin is preferred. The heat resistance or peelability of the polyoxymethylene resin is excellent. Further, when the support plate 31 is a glass plate, it is easily fixed to the glass plate by a condensation reaction with a stanol group on the surface of the glass plate. In a state in which the polyoxyxylene resin layer is interposed between the support sheet 31 and the substrate 24 with the conductive metal oxide film, for example, even if it is treated in the air at about 200 ° C for about 1 hour, the peeling property hardly deteriorates. From the viewpoint of the polyoxyalkylene resin layer, it is also preferred.

樹脂層32較佳為包含聚矽氧樹脂中用於剝離紙用途之聚矽氧樹脂(硬化物)。使成為剝離紙用聚矽氧樹脂之硬化性樹脂組合物在支持板31之表面硬化而形成的樹脂層32具有優異之剝離性,故而較佳。又,由於柔軟性較高,故而即便氣泡或灰塵等異物混入於樹脂層32與附有導電性金屬氧化物膜之基板24之間,亦可抑制附有導電性金屬氧化物膜之基板24產生應變缺陷。The resin layer 32 is preferably a polyoxyl resin (hardened product) for use in a release paper in a polyoxyxylene resin. The resin layer 32 formed by curing the surface of the support sheet 31 as a curable resin composition for a release resin for a release paper has excellent releasability, which is preferable. Further, since the flexibility is high, even if foreign matter such as bubbles or dust is mixed between the resin layer 32 and the substrate 24 with the conductive metal oxide film, the substrate 24 with the conductive metal oxide film can be prevented from being generated. Strain defects.

上述成為剝離紙用聚矽氧樹脂之硬化性聚矽氧根據其硬化機制而分類為縮合反應型聚矽氧、加成反應型聚矽氧、紫外線硬化型聚矽氧及電子束硬化型聚矽氧,任一種均可使用。於該等之中,較佳為加成反應型聚矽氧。係由於容易進行硬化反應,形成樹脂層32時剝離性之程度良好,且耐熱性亦較高之故。The above-mentioned curable polyfluorene oxide which is a polyoxyxylene resin for release paper is classified into a condensation reaction type polyoxane, an addition reaction type polyoxane, an ultraviolet curing type polyfluorene oxygen, and an electron beam hardening type polycondensation according to the curing mechanism. Oxygen can be used. Among these, an addition reaction type polyoxane is preferred. Since the resin layer 32 is formed, the degree of peeling property is good and the heat resistance is also high because the curing reaction is easy.

加成反應型聚矽氧為含有主劑及交聯劑,於鉑系觸媒等觸媒之存在下硬化之硬化性組合物。加成反應型聚矽氧之硬化可藉由加熱處理而促進。加成反應型聚矽氧之主劑較佳為具有鍵結於矽原子上之烯基(乙烯基等)的有機聚矽氧烷(即有機烯基聚矽氧烷。再者,較佳為直鏈狀),烯基等成為交聯點。加成反應型聚矽氧之交聯劑較佳為具有鍵結於矽原子上之氫原子(氫矽烷基)的有機聚矽氧烷(即有機氫聚矽氧烷。再者,較佳為直鏈狀),氫矽烷基等成為交聯點。The addition reaction type polyfluorene is a curable composition containing a main component and a crosslinking agent and hardened in the presence of a catalyst such as a platinum-based catalyst. The hardening of the addition reaction type polyoxygen can be promoted by heat treatment. The main component of the addition reaction type polyoxo is preferably an organic polyoxyalkylene having an alkenyl group (vinyl group or the like) bonded to a ruthenium atom (i.e., an organic alkenyl polysiloxane). Further, preferably, A linear form, an alkenyl group or the like becomes a crosslinking point. The addition reaction type polyfluorene crosslinking agent is preferably an organic polyoxyalkylene having a hydrogen atom (hydroalkylene group) bonded to a halogen atom (i.e., an organic hydrogen polyoxyalkylene. Further, preferably, Straight chain), hydroquinone or the like becomes a crosslinking point.

加成反應型聚矽氧係藉由主劑與交聯劑之交聯點進行加成反應而硬化。The addition reaction type polyoxymethylene is hardened by an addition reaction of a crosslinking point of a main agent and a crosslinking agent.

又,成為剝離紙用聚矽氧樹脂之硬化性聚矽氧於形態上存在溶劑型、乳液型及無溶劑型,任一種類型均可使用。於該等之中,較佳為無溶劑型。其原因在於無溶劑型於生產性、安全性、環境特性之方面較優異。並且,於形成樹脂層32時之硬化時,即加熱硬化、紫外線硬化或電子束硬化時,由於不含產生發泡之溶劑,故而樹脂層32中不易殘留氣泡。Further, the curable polyfluorene oxide which is a polyoxyxylene resin for release paper has a solvent type, an emulsion type, and a solventless type, and any of them may be used. Among these, a solventless type is preferred. The reason for this is that the solvent-free type is superior in terms of productivity, safety, and environmental characteristics. Further, in the case of curing at the time of forming the resin layer 32, that is, heat curing, ultraviolet curing, or electron beam curing, since the solvent for foaming is not contained, bubbles are less likely to remain in the resin layer 32.

又,作為成為剝離紙用聚矽氧樹脂之硬化性聚矽氧,具體而言作為市售之商品名或型號,可列舉:KNS-320A、KS-847(均為Shin-Etsu Silicones公司製造),TPR6700(Momentive Performance Materials Japan有限責任公司製造),乙烯聚矽氧「8500」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯聚矽氧「11364」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合、乙烯聚矽氧「11365」(荒川化學工業公司製造)與甲基氫聚矽氧烷「12031」(荒川化學工業公司製造)之組合等。In addition, as a commercially available product name or model, KNS-320A and KS-847 (all manufactured by Shin-Etsu Silicones Co., Ltd.) are exemplified as the curable polyfluorene which is a polyoxyl resin for a release paper. , TPR6700 (manufactured by Momentive Performance Materials Japan Co., Ltd.), a combination of ethylene polyoxylium "8500" (manufactured by Arakawa Chemical Industries Co., Ltd.) and methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries, Ltd.), ethylene polymerization A combination of "11364" (manufactured by Arakawa Chemical Industries Co., Ltd.) and methyl hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries, Ltd.), ethylene polyoxylium "11365" (manufactured by Arakawa Chemical Industries, Ltd.) and methyl A combination of hydrogen polyoxyalkylene "12031" (manufactured by Arakawa Chemical Industries, Ltd.).

再者,KNS-320A、KS-847及TPR6700為預先含有主劑與交聯劑之硬化性聚矽氧。Further, KNS-320A, KS-847, and TPR6700 are hardening polyfluorenes containing a main component and a crosslinking agent in advance.

又,形成樹脂層32之聚矽氧樹脂較佳為具有聚矽氧樹脂層中之低分子量之聚矽氧等成分不易轉移至附有導電性金屬氧化物膜之基板24中的性質,即低聚矽氧轉移性。又,就源自交聯結構之耐熱性之觀點而言,較佳為有機氫聚矽氧烷之矽原子上鍵結之氫原子相對於有機烯基聚矽氧烷之烯基的莫耳比為0.5~2。Further, the polyfluorene-oxygen resin forming the resin layer 32 is preferably one having a low molecular weight polyfluorene oxide or the like in the polyoxynoxy resin layer, which is not easily transferred to the substrate 24 with the conductive metal oxide film, that is, low. Polyoxygen transferability. Further, from the viewpoint of heat resistance derived from the crosslinked structure, it is preferred that the hydrogen atom bonded to the ruthenium atom of the organohydrogenpolyoxyalkylene has a molar ratio to the alkenyl group of the organic alkenyl polyoxyalkylene. It is 0.5~2.

(樹脂層之製造方法)(Method of Manufacturing Resin Layer)

將樹脂層32固定於支持板31上之方法並無特別限定,例如可列舉將膜狀之樹脂固定於支持板31之表面之方法。具體可列舉:為對支持板31之表面,賦予對於膜之表面的較高之固定力(較高之剝離強度),而於支持板31之表面進行表面改質處理(底塗處理),然後固定於支持板31上之方法。例如可例示:矽烷偶合劑等以化學方式提昇固定力的化學方法(底塗處理);如電漿照射或火焰(flame)處理等增加SiOH基、SiO基等表面活性基的物理方法;如噴砂處理等藉由增加表面之粗糙度而增加抓牢力的機械處理方法等。The method of fixing the resin layer 32 to the support plate 31 is not particularly limited, and examples thereof include a method of fixing a film-like resin to the surface of the support plate 31. Specifically, in order to impart a high fixing force (high peeling strength) to the surface of the support sheet 31 on the surface of the support sheet 31, surface modification treatment (primer treatment) is performed on the surface of the support sheet 31, and then A method of fixing to the support board 31. For example, a chemical method (primer treatment) for chemically raising a fixing force such as a decane coupling agent; a physical method of increasing a surface active group such as a SiOH group or an SiO group such as plasma irradiation or flame treatment; A mechanical treatment method or the like which increases the grip by increasing the roughness of the surface.

又,例如亦可利用於支持板31表面上形成成為樹脂層32之硬化性樹脂組合物之層,繼而使該硬化性樹脂組合物硬化而形成樹脂層32的方法,而形成固定於支持板31上之樹脂層32。作為於支持板31表面上形成硬化性樹脂組合物之層之方法,例如可列舉將硬化性樹脂組合物塗佈於支持板31上之方法。作為塗佈之方法,可列舉:噴塗法、模塗法、旋塗法、浸塗法、輥塗法、棒塗法、網版印刷法、凹版印刷塗佈法等。可根據樹脂組合物之種類而自該等方法之中適當地選擇。In addition, for example, a layer of the curable resin composition to be the resin layer 32 is formed on the surface of the support sheet 31, and then the curable resin composition is cured to form the resin layer 32, and is formed to be fixed to the support sheet 31. The resin layer 32 thereon. As a method of forming a layer of the curable resin composition on the surface of the support sheet 31, for example, a method of applying the curable resin composition onto the support sheet 31 can be mentioned. Examples of the coating method include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. It can be suitably selected among these methods according to the kind of resin composition.

又,於將成為樹脂層32之硬化性樹脂組合物塗佈於支持板31上之情形時,其塗佈量較佳為1~100 g/m2,更佳為5~20 g/m2Further, when the curable resin composition to be the resin layer 32 is applied onto the support sheet 31, the coating amount thereof is preferably from 1 to 100 g/m 2 , more preferably from 5 to 20 g/m 2 . .

例如,於由加成反應型聚矽氧之硬化性樹脂組合物形成樹脂層32之情形時,係將包含有機烯基聚矽氧烷、有機氫聚矽氧烷及觸媒之混合物的硬化性樹脂組合物,藉由上述之噴塗法等公知之方法塗佈於支持板31上,其後進行加熱硬化。加熱硬化條件亦根據觸媒之調配量而不同,例如於相對於有機烯基聚矽氧烷與有機氫聚矽氧烷之合計量100重量份,調配鉑系觸媒2重量份之情形時,係於大氣中、50℃~250℃下,較佳為100℃~200℃下使其反應。又,該情形時之反應時間係設為5~60分鐘,較佳為設為10~30分鐘。For example, in the case where the resin layer 32 is formed of an addition reaction type polyoxyl curable resin composition, the curability of a mixture containing an organic alkenyl polysiloxane, an organic hydrogen polyoxyalkylene, and a catalyst is used. The resin composition is applied onto the support sheet 31 by a known method such as the above-described spraying method, and then heat-hardened. The heat-hardening conditions are also different depending on the amount of the catalyst to be mixed. For example, when 100 parts by weight of the platinum-based catalyst is blended with respect to 100 parts by weight of the total of the organic alkenyl polysiloxane and the organohydrogenpolyoxyalkylene. It is reacted in the atmosphere at 50 ° C to 250 ° C, preferably at 100 ° C to 200 ° C. Further, the reaction time in this case is set to 5 to 60 minutes, preferably 10 to 30 minutes.

藉由對硬化性樹脂組合物進行加熱硬化,硬化反應時聚矽氧樹脂與支持板31以化學方式結合。另外,聚矽氧樹脂層藉由投錨效應而與支持板31結合。藉由該等作用,聚矽氧樹脂層牢固地固定於支持板31上。再者,於由硬化性樹脂組合物形成含有聚矽氧樹脂以外之樹脂的樹脂層之情形時,亦可利用與上述相同之方法而形成固定於支持板上之樹脂層。By heat-hardening the curable resin composition, the polyoxymethylene resin is chemically bonded to the support plate 31 at the time of the hardening reaction. Further, the polyoxymethylene resin layer is bonded to the support plate 31 by the anchoring effect. By these effects, the polyoxyphthalide resin layer is firmly fixed to the support plate 31. In the case where a resin layer containing a resin other than the polyoxyn resin is formed from the curable resin composition, the resin layer fixed to the support sheet can be formed by the same method as described above.

<積層體及其製造方法><Laminated body and its manufacturing method>

如上述般,本發明之積層體10係包含附有導電性金屬氧化物膜之基板24、支持板31且於其等間存在樹脂層32的積層體。As described above, the laminated body 10 of the present invention includes the laminated body in which the substrate 24 with the conductive metal oxide film and the support plate 31 are present and the resin layer 32 is present between them.

本發明之積層體之製造方法並無特別限制,通常係藉由上述方法,製作表面上固定有樹脂層32之支持板31,其後將附有導電性金屬氧化物膜之基板24,以導電性金屬氧化物膜22與樹脂層32可剝離地密接觸之方式配置於樹脂層32上。The method for producing the laminate of the present invention is not particularly limited. Usually, the support sheet 31 having the resin layer 32 fixed on its surface is formed by the above method, and then the substrate 24 with the conductive metal oxide film is attached to conduct electricity. The metal oxide film 22 is disposed on the resin layer 32 so as to be in close contact with the resin layer 32.

使樹脂層32可剝離地密接於附有導電性金屬氧化物膜之基板24上之方法並無特別限制,可為公知之方法。例如可列舉下述方法:於常壓環境下,於樹脂層32之剝離性表面重疊附有導電性金屬氧化物膜之基板24後,使用輥或壓機壓接樹脂層32與附有導電性金屬氧化物膜之基板24。藉由利用輥或壓機進行壓接,樹脂層32與附有導電性金屬氧化物膜之基板24進一步密接,故而較佳。又,藉由利用輥或壓機進行壓接,相對容易去除混入於樹脂層32與附有導電性金屬氧化物膜之基板24間的氣泡,故而較佳。The method in which the resin layer 32 is peelably adhered to the substrate 24 to which the conductive metal oxide film is attached is not particularly limited, and may be a known method. For example, a method in which a substrate 24 having a conductive metal oxide film is adhered to a peelable surface of a resin layer 32 under a normal pressure environment, and a resin layer 32 and a conductive property are bonded using a roll or a press. A substrate 24 of a metal oxide film. It is preferable that the resin layer 32 is further adhered to the substrate 24 with the conductive metal oxide film by pressure bonding by a roll or a press. Further, it is preferable to perform pressure bonding by a roll or a press, and it is relatively easy to remove air bubbles mixed between the resin layer 32 and the substrate 24 with the conductive metal oxide film.

若藉由真空層壓法或真空加壓法進行壓接,則可更佳地抑制氣泡混入或確保良好之密接,故而更佳。藉由在真空下進行壓接,亦存在下述優點:即便殘留有微小之氣泡時,亦不會因加熱而氣泡成長,不易導致附有導電性金屬氧化物膜之基板24產生應變缺陷。When the pressure bonding is carried out by a vacuum lamination method or a vacuum press method, it is more preferable to suppress the incorporation of air bubbles or to ensure good adhesion. Further, by pressure bonding under vacuum, there is an advantage that even if minute bubbles remain, the bubbles do not grow due to heating, and it is difficult to cause strain defects in the substrate 24 with the conductive metal oxide film.

使樹脂層32可剝離地密接於附有導電性金屬氧化物膜之基板24上時,較佳為將樹脂層32及附有導電性金屬氧化物膜之基板24的相互接觸之側之面充分地洗淨,於潔淨度較高之環境下進行積層。即便於樹脂層32與附有導電性金屬氧化物膜之基板24間混入異物,由於樹脂層32產生變形,故而亦不會對附有導電性金屬氧化物膜之基板24之表面之平坦性造成影響,但潔淨度越高則其平坦性越良好,故而較佳。When the resin layer 32 is detachably adhered to the substrate 24 to which the conductive metal oxide film is attached, it is preferable that the surface of the resin layer 32 and the substrate 24 with the conductive metal oxide film are in contact with each other. Wash the floor and laminate it in a clean environment. That is, the foreign matter is mixed between the resin layer 32 and the substrate 24 with the conductive metal oxide film, and the resin layer 32 is deformed, so that the flatness of the surface of the substrate 24 with the conductive metal oxide film is not caused. The effect is better, but the higher the cleanliness, the better the flatness is.

再者,將樹脂層32固定於支持板31上之步驟、使樹脂層32可剝離地密接於附有導電性金屬氧化物膜之基板24上之步驟的順序並無限制,例如亦可為大致同時。Further, the step of fixing the resin layer 32 to the support plate 31 and the step of adhering the resin layer 32 to the substrate 24 with the conductive metal oxide film adhered thereto are not limited, and may be, for example, substantially Simultaneously.

本發明之積層體可使用於各種用途,例如可列舉製造後述之顯示裝置用面板、PV、薄膜二次電池、表面形成有電路之半導體晶圓等電子零件之用途等。再者,於該用途中,積層體曝露於高溫條件(例如,320℃以上)下(例如,1小時以上)之情況較多。The laminate of the present invention can be used for various applications, and examples thereof include the use of a panel for a display device to be described later, a PV, a thin film secondary battery, and an electronic component such as a semiconductor wafer on which a circuit is formed. Further, in this application, the laminate is often exposed to high temperature conditions (for example, 320 ° C or higher) (for example, 1 hour or longer).

此處,所謂顯示裝置用面板,包括LCD、OLED、電子紙、電漿顯示面板、場發射面板、量子點LED面板、MEMS(Micro Electro Mechanical Systems,微機電系統)快門面板等。Here, the panel for a display device includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

<附有支持板之顯示裝置用面板及其製造方法><Panel for display device with support plate and method for manufacturing the same>

於本發明中,使用上述積層體而製造附有支持板之顯示裝置用面板。In the present invention, the above-mentioned laminated body is used to manufacture a panel for a display device with a support plate.

圖2係本發明之附有支持板之顯示裝置用面板的一例之示意性剖面圖。Fig. 2 is a schematic cross-sectional view showing an example of a panel for a display device with a support plate according to the present invention.

附有支持板之顯示裝置用面板40包含上述積層體10、顯示裝置用面板之構成構件50。The display device panel 40 with the support plate includes the laminated body 10 and the constituent member 50 of the display device panel.

(顯示裝置用面板之構成構件)(constituting members of the panel for display device)

所謂顯示裝置用面板之構成構件50,例如於使用玻璃基板之LCD、OLED等顯示裝置中,係指形成於玻璃基板上之構件或其一部分。例如於LCD、OLED等顯示裝置中,於基板之表面形成有TFT陣列(以下簡稱為「陣列」)、保護層、彩色濾光片、液晶、包含ITO之透明電極等、各種電路圖案等構件、或組合有該等者。又,例如於包含OLED之顯示裝置中,可列舉於基板上形成之透明電極、電洞注入層、電洞傳輸層、發光層、電子傳輸層等。The constituent member 50 of the panel for a display device is, for example, a display device such as an LCD or an OLED using a glass substrate, or a member formed on the glass substrate or a part thereof. For example, in a display device such as an LCD or an OLED, a TFT array (hereinafter simply referred to as an "array"), a protective layer, a color filter, a liquid crystal, a transparent electrode including ITO, and the like, and various circuit patterns are formed on the surface of the substrate. Or combine them. Further, examples of the display device including the OLED include a transparent electrode formed on a substrate, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and the like.

上述附有支持板之顯示裝置用面板40之製造方法並無特別限制,可根據顯示裝置用面板之構成構件之種類,利用先前公知之方法,於積層體10的附有導電性金屬氧化物膜之基板24之表面上形成顯示裝置用面板之構成構件50。The manufacturing method of the display device panel 40 with the above-mentioned support plate is not particularly limited, and the conductive metal oxide film may be attached to the laminated body 10 by a conventionally known method depending on the type of the constituent members of the display device panel. A constituent member 50 of a panel for a display device is formed on the surface of the substrate 24.

例如,以製造OLED之情形為例,為於積層體10之附有導電性金屬氧化物膜之基板24的與密接樹脂層32之表面為相反側的表面上(相當於基板之第2主面202)形成有機EL結構體,而實施以下等各種之層形成或處理:形成透明電極;進而於形成透明電極之面上蒸鍍電洞注入層、電洞傳輸層、發光層、電子傳輸層等;形成背面電極;使用密封板進行密封。作為該等層形成或處理,具體可列舉例如成膜處理、蒸鍍處理、密封板之接著處理等。該等構成構件之形成亦可為顯示裝置用面板所需之全部構成構件之形成的一部分。於該情形時,將該形成有一部分構成構件的附有導電性金屬氧化物膜之基板24自樹脂層32上剝離後,於附有導電性金屬氧化物膜之基板24上形成剩餘之構成構件,製造顯示裝置用面板。For example, in the case of manufacturing an OLED, the surface of the substrate 24 with the conductive metal oxide film on the laminate 10 on the opposite side to the surface of the adhesion resin layer 32 (corresponding to the second main surface of the substrate) 202) forming an organic EL structure, and performing various layer formation or treatment of forming a transparent electrode; and further depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, etc. on a surface on which the transparent electrode is formed Forming a back electrode; sealing using a sealing plate. Specific examples of the formation or treatment of the layers include a film formation treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate. The formation of the constituent members may also be part of the formation of all the constituent members required for the panel for the display device. In this case, after the substrate 24 with the conductive metal oxide film formed with a part of the constituent members is peeled off from the resin layer 32, the remaining constituent members are formed on the substrate 24 to which the conductive metal oxide film is attached. , manufacturing panels for display devices.

<顯示裝置用面板及其製造方法><Panel for display device and method of manufacturing the same>

如圖2所示,本發明之顯示裝置用面板60包含附有導電性金屬氧化物膜之基板24與顯示裝置用面板之構成構件50。As shown in FIG. 2, the panel 60 for a display device of the present invention includes a substrate 24 with a conductive metal oxide film and a constituent member 50 of a panel for a display device.

顯示裝置用面板60可藉由自附有支持板之顯示裝置用面板40中,剝離附有導電性金屬氧化物膜之基板24與固定於支持板31上之樹脂層32而獲得。The display device panel 60 can be obtained by peeling off the substrate 24 with the conductive metal oxide film and the resin layer 32 fixed to the support plate 31 from the display device panel 40 to which the support plate is attached.

再者,於剝離時之附有導電性金屬氧化物膜之基板24上的構成構件為顯示裝置用面板所需之全部構成構件之形成的一部分時,其後於附有導電性金屬氧化物膜之基板24上形成剩餘之構成構件而製造顯示裝置用面板。In addition, when the constituent member on the substrate 24 to which the conductive metal oxide film is attached at the time of peeling is a part of the formation of all the constituent members required for the panel for a display device, the conductive metal oxide film is attached thereto. The remaining constituent members are formed on the substrate 24 to manufacture a panel for a display device.

將導電性金屬氧化物膜22與樹脂層32之剝離性表面剝離的方法並無特別限定。具體而言,例如可將銳利之刀具狀物插入於導電性金屬氧化物膜22與樹脂層32之界面而形成剝離之起點,然後吹附水與壓縮空氣之混合流體而進行剝離。The method of peeling off the peelable surface of the conductive metal oxide film 22 and the resin layer 32 is not specifically limited. Specifically, for example, a sharp cutter can be inserted into the interface between the conductive metal oxide film 22 and the resin layer 32 to form a starting point of peeling, and then a mixed fluid of water and compressed air is blown and peeled off.

再者,亦可在將顯示裝置用面板60自附有支持板之顯示裝置用面板40中剝離後,根據需要,於顯示裝置用面板60中之附有導電性金屬氧化物膜之基板24的導電性金屬氧化物膜22上,另外設置顯示裝置用面板之構成構件。In addition, after the display device panel 60 is detached from the display device panel 40 with a support plate, the substrate 24 with the conductive metal oxide film attached to the display device panel 60 may be used as needed. Further, a constituent member of the panel for a display device is provided on the conductive metal oxide film 22.

<顯示裝置><display device>

又,可利用此種顯示裝置用面板60獲得顯示裝置。作為顯示裝置,可列舉LCD、OLED。作為LCD,可列舉TN(Twisted Nematic,扭曲向列)型、STN(Super Twisted Nematic,超扭曲向列)型、FE(Field Emission,場發射)型、TFT(Thin Film Transistor,薄膜電晶體)型、MIM(Metal-Insulator-Metal,金屬-絕緣體-金屬)型。Moreover, the display device can be obtained by such a display device panel 60. Examples of the display device include an LCD and an OLED. Examples of the LCD include a TN (Twisted Nematic) type, an STN (Super Twisted Nematic) type, an FE (Field Emission) type, and a TFT (Thin Film Transistor) type. , MIM (Metal-Insulator-Metal, metal-insulator-metal) type.

此處,獲得顯示裝置之操作並無特別限制,例如可利用先前公知之方法製造顯示裝置。Here, the operation of obtaining the display device is not particularly limited, and for example, the display device can be manufactured by a previously known method.

實施例Example

以下,藉由實施例等具體地說明本發明,但本發明並非限定於該等之例者。Hereinafter, the present invention will be specifically described by way of Examples and the like, but the invention is not limited thereto.

再者,於下述實施例及比較例中,水接觸角係使用接觸角計(Kruss公司製造,液滴形狀分析系統DSA 10Mk2)而進行測定。又,表面粗糙度Ra係使用原子力顯微鏡(Seiko Instruments公司製造,SPA300/SPI3800)而進行測定。In the following examples and comparative examples, the water contact angle was measured using a contact angle meter (manufactured by Kruss Corporation, droplet shape analysis system DSA 10Mk2). Further, the surface roughness Ra was measured using an atomic force microscope (Seiko Instruments, SPA300/SPI3800).

關於薄板玻璃積層體之加熱後之剝離性,係於下述特定條件下進行加熱處理後,將薄板玻璃基板與樹脂層剝離,於薄板玻璃基板之與樹脂層接觸之面上目視觀察而進行評價。不存在樹脂層之殘渣者評價為良好,存在樹脂層之殘渣者評價為不佳。The peeling property after heating of the thin-plate glass laminate was subjected to heat treatment under the following specific conditions, and then the thin glass substrate and the resin layer were peeled off, and evaluated on the surface of the thin glass substrate in contact with the resin layer. . The residue of the resin layer was not evaluated as being good, and the residue of the resin layer was evaluated as being unsatisfactory.

進而,於剝離後之薄板玻璃基板的與樹脂層接觸之面上,使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,然後黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),評價有無剝離之產生。不產生剝離者表示不存在樹脂層之殘渣。產生剝離者表示存在樹脂層之殘渣。Further, on the surface of the thin glass substrate after peeling, which is in contact with the resin layer, plasma irradiation is carried out using a normal-pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and then a polarizing film is adhered thereto (made by Nitto Denko Co., Ltd., acrylic adhesive) The agent was evaluated for the presence or absence of peeling. The absence of peeling indicates that there is no residue of the resin layer. The occurrence of peeling indicates that there is a residue of the resin layer.

<實施例1><Example 1>

首先,對長720 mm、寬600 mm、板厚0.4 mm,線膨脹係數38×10-7/℃之支持玻璃基板(無鹼玻璃,旭硝子股份有限公司製造之AN100)進行純水洗淨後,進而進行UV洗淨而加以清潔。First, after supporting a glass substrate (an alkali-free glass, AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a thickness of 0.4 mm, and a linear expansion coefficient of 38 × 10 -7 /°C, pure water is washed. Further, it is washed by UV and cleaned.

繼而,於支持玻璃基板之第1主面上,利用網版印刷機,將無溶劑加成反應型剝離紙用聚矽氧(Shin-Etsu Silicones公司製造,KNS-320A,黏度:0.40 Pa‧s,溶解度參數(SP值):7.3)100重量份與鉑系觸媒(Shin-Etsu Silicones公司製造,CAT-PL-56)2重量份之混合液塗敷成長705 mm、寬595 mm之大小的長方形(塗敷量30 g/m2)。Then, on the first main surface of the supporting glass substrate, a non-solvent addition reaction type release paper for polyether (for use by Shin-Etsu Silicones Co., Ltd., KNS-320A, viscosity: 0.40 Pa‧s) was used by a screen printing machine. Solubility parameter (SP value): 7.3) 100 parts by weight of a mixed solution of a platinum-based catalyst (manufactured by Shin-Etsu Silicones Co., Ltd., CAT-PL-56) of 2 parts by weight was coated to a size of 705 mm and a width of 595 mm. Rectangular (application amount 30 g/m 2 ).

繼而,於大氣中、180℃下對其進行30分鐘加熱硬化,從而於支持玻璃基板之第1主面形成厚度20 μm之聚矽氧樹脂層。Then, it was heat-hardened in the air at 180 ° C for 30 minutes to form a polyoxyxylene resin layer having a thickness of 20 μm on the first main surface of the supporting glass substrate.

再者,上述無溶劑加成反應型剝離紙用聚矽氧係包含具有鍵結於矽原子上之乙烯基及甲基的直鏈狀有機烯基聚矽氧烷(主劑)、與具有鍵結於矽原子上之氫原子及甲基的直鏈狀有機氫聚矽氧烷(交聯劑)者。Further, the polyoxosiloxane for the solventless addition reaction type release paper contains a linear organic alkenyl polyoxyalkylene (main component) having a vinyl group and a methyl group bonded to a ruthenium atom, and has a bond. A linear organohydrogenpolyoxyalkylene (crosslinking agent) which is bonded to a hydrogen atom and a methyl group on a halogen atom.

繼而,對長720 mm、寬600 mm、板厚0.3 mm,線膨脹係數38×10-7/℃之薄板玻璃基板(旭硝子股份有限公司製造之AN100)的與聚矽氧樹脂接觸之側之面進行純水洗淨,其後進行UV洗淨而加以清潔。進而,於經清潔之面上,藉由磁控濺鍍法(加熱溫度300℃,成膜壓力5 mTorr,功率密度0.5 W/cm2),形成厚度10 nm之ITO(表面電阻300 Ω/□),獲得薄板玻璃基板(附有導電性金屬氧化物膜之薄板玻璃基板)。導電性金屬氧化物膜表面之水接觸角為45°。又,導電性金屬氧化物膜之表面粗糙度Ra為0.7 nm。Then, on the side of the thin glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a coefficient of linear expansion of 38 × 10 -7 /°C, which is in contact with the polyoxyxene resin It is washed with pure water and then washed with UV to clean it. Further, on the cleaned surface, ITO (surface resistance 300 Ω/□) having a thickness of 10 nm was formed by magnetron sputtering (heating temperature 300 ° C, film formation pressure 5 mTorr, power density 0.5 W/cm 2 ). ), a thin glass substrate (a thin glass substrate with a conductive metal oxide film) was obtained. The water contact angle of the surface of the conductive metal oxide film was 45°. Further, the surface roughness Ra of the conductive metal oxide film was 0.7 nm.

其後,於室溫下,利用真空壓機將薄板玻璃基板之ITO成膜面、與支持玻璃基板之聚矽氧樹脂層面貼合,獲得薄板玻璃積層體A1。Thereafter, the ITO film-forming surface of the thin glass substrate was bonded to the layer of the polyoxyl resin supporting the glass substrate by a vacuum press at room temperature to obtain a thin-plate glass laminate A1.

於所獲得之薄板玻璃積層體A1中,兩玻璃基板不產生氣泡地與聚矽氧樹脂層密接,無應變狀缺陷,且平滑性亦良好。In the obtained thin plate glass laminate A1, the two glass substrates were in close contact with the polyoxymethylene resin layer without generating bubbles, and there was no strain-like defect, and the smoothness was also good.

(加熱後之剝離性評價)(evaluation of peelability after heating)

對薄板玻璃積層體A1,於大氣氧為0.1%以下之氮環境中,於320℃下實施1小時加熱處理。The thin-plate glass laminate A1 was heat-treated at 320 ° C for 1 hour in a nitrogen atmosphere having an atmospheric oxygen content of 0.1% or less.

繼而,進行剝離試驗。具體而言,首先,將薄板玻璃積層體A1中之薄板玻璃之第2主面固定於固定台上。另一方面,利用吸附墊吸附支持玻璃基板之第2主面。繼而,於薄板玻璃積層體A1所具有之4個角部中之1個處的薄板玻璃基板與樹脂層之界面,插入厚度0.4 mm之刀片將薄板玻璃基板稍稍剝離,形成剝離之起點。繼而,使吸附墊向離開固定台之方向移動,從而將薄板玻璃基板與具有樹脂層之支持玻璃基板剝離。Then, a peeling test was performed. Specifically, first, the second main surface of the thin plate glass in the thin plate glass laminate A1 is fixed to the fixing table. On the other hand, the second main surface of the supporting glass substrate is adsorbed by the adsorption pad. Then, at the interface between the thin glass substrate and the resin layer at one of the four corner portions of the thin plate glass laminate A1, a blade having a thickness of 0.4 mm was inserted to slightly peel the thin glass substrate to form a starting point of peeling. Then, the adsorption pad is moved away from the fixing table to peel the thin glass substrate from the supporting glass substrate having the resin layer.

剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+1.2 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。There is no residue of the resin layer on the surface of the thin plate glass substrate after contact with the resin layer (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off after peeling (on the conductive metal oxide film) was measured by an electrostatic measuring device to be +1.2 kV. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

<實施例2><Example 2>

與實施例1同樣地,於室溫下,利用真空壓機將薄板玻璃基板之ITO成膜面、與支持玻璃基板之聚矽氧樹脂層面貼合,獲得薄板玻璃積層體A1。繼而,不實施加熱處理,與實施例1同樣地進行剝離試驗。剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+1.3 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。In the same manner as in Example 1, the ITO film formation surface of the thin glass substrate and the polyoxyl resin layer of the support glass substrate were bonded together at room temperature by a vacuum press to obtain a thin glass laminate. Then, the peeling test was performed in the same manner as in Example 1 without performing heat treatment. There is no residue of the resin layer on the surface of the thin plate glass substrate after contact with the resin layer (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off and peeled off from the resin layer (on the conductive metal oxide film) was measured to be +1.3 kV by an electrostatic measuring device. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

<實施例3><Example 3>

與實施例1同樣地,於室溫下,利用真空壓機將薄板玻璃基板之ITO成膜面、與支持玻璃基板之聚矽氧樹脂層面貼合,獲得薄板玻璃積層體A1。其後,與實施例1同樣地對薄板玻璃積層體A1進行加熱處理。繼而,進行剝離試驗。具體而言,首先,將薄板玻璃積層體A1中之薄板玻璃基板之第2主面固定於固定台上。另一方面,利用吸附墊吸附支持玻璃基板之第2主面。繼而,於薄板玻璃積層體A1所具有之4個角部中之1個處的薄板玻璃基板與樹脂層之界面,插入厚度0.4 mm之刀片將薄板玻璃基板稍稍剝離,形成剝離之起點。此處,係一面自靜電消除器(keyence公司製造)吹附除靜電性流體至該界面,一面插入刀片。In the same manner as in Example 1, the ITO film formation surface of the thin glass substrate and the polyoxyl resin layer of the support glass substrate were bonded together at room temperature by a vacuum press to obtain a thin glass laminate. Thereafter, the thin-plate glass laminate A1 was heat-treated in the same manner as in the first embodiment. Then, a peeling test was performed. Specifically, first, the second main surface of the thin glass substrate in the thin plate glass laminate A1 is fixed to the fixing table. On the other hand, the second main surface of the supporting glass substrate is adsorbed by the adsorption pad. Then, at the interface between the thin glass substrate and the resin layer at one of the four corner portions of the thin plate glass laminate A1, a blade having a thickness of 0.4 mm was inserted to slightly peel the thin glass substrate to form a starting point of peeling. Here, the blade is inserted while the static eliminator (manufactured by Keyence Corporation) is blown to the interface.

繼而,一面繼續自靜電消除器朝所形成之空隙中吹附除靜電性流體,一面使吸附墊向離開固定台之方向移動,從而將薄板玻璃基板與具有樹脂層之支持玻璃基板剝離。Then, while the static eliminator is continuously ejected from the static eliminator to remove the electrostatic fluid, the adsorption pad is moved away from the fixing table to peel the thin glass substrate from the supporting glass substrate having the resin layer.

剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+0.1 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。There is no residue of the resin layer on the surface of the thin plate glass substrate after contact with the resin layer (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off after peeling (on the conductive metal oxide film) was measured to be +0.1 kV by an electrostatic measuring device. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

<實施例4><Example 4>

首先,對長760 mm、寬640 mm、板厚0.3 mm,線膨脹係數38×10-7/℃之薄板玻璃基板(無鹼玻璃,旭硝子股份有限公司製造之AN100)進行純水洗淨後,進而進行UV洗淨而加以清潔。進而,於經清潔之第1主面上,藉由磁控濺鍍法(加熱溫度300℃,成膜壓力5 mTorr,功率密度0.5 W/cm2)形成厚度10 nm之ITO(表面電阻300 Ω/□),獲得薄板玻璃基板(附有導電性金屬氧化物膜之薄板玻璃基板)。導電性金屬氧化物膜表面之水接觸角為45°。又,導電性金屬氧化物膜之表面粗糙度Ra為0.7 nm。繼而,於薄板玻璃基板之第1主面之導電性金屬氧化物膜面上,與實施例1同樣地,利用網版印刷機,將兩末端具有乙烯基之直鏈狀有機烯基聚矽氧烷(乙烯聚矽氧,荒川化學工業公司製造,8500)、分子內具有氫矽烷基之甲基氫聚矽氧烷(荒川化學工業公司製造,12031)、鉑系觸媒(荒川化學工業公司製造,CAT12070)之混合液塗敷成長750 mm、寬630 mm之大小的長方形,形成含有未硬化之硬化性聚矽氧之層(塗敷量35 g/m2)。First, a thin glass substrate (an alkali-free glass, AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 760 mm, a width of 640 mm, a thickness of 0.3 mm, and a linear expansion coefficient of 38 × 10 -7 /°C is washed with pure water. Further, it is washed by UV and cleaned. Further, on the first main surface to be cleaned, ITO (surface resistance 300 Ω) having a thickness of 10 nm was formed by magnetron sputtering (heating temperature 300 ° C, film formation pressure 5 mTorr, power density 0.5 W/cm 2 ). /□), obtaining a thin glass substrate (a thin glass substrate with a conductive metal oxide film). The water contact angle of the surface of the conductive metal oxide film was 45°. Further, the surface roughness Ra of the conductive metal oxide film was 0.7 nm. Then, in the same manner as in the first embodiment, a linear organic alkenyl group having a vinyl group at both ends was formed by a screen printing machine on the surface of the conductive metal oxide film on the first main surface of the thin glass substrate. Alkane (ethylene polyfluorene, manufactured by Arakawa Chemical Industries, Ltd., 8500), methylhydrogenated polyoxyalkylene having a hydroquinone group in the molecule (manufactured by Arakawa Chemical Industries, Ltd., 12031), platinum-based catalyst (manufactured by Arakawa Chemical Industries, Ltd.) The mixture of CAT12070) was coated with a rectangle having a size of 750 mm and a width of 630 mm to form a layer containing uncured hardened polyfluorene (coating amount: 35 g/m 2 ).

繼而,對長720 mm、寬600 mm、板厚0.4 mm之支持玻璃基板的與聚矽氧樹脂接觸側之面(第1主面)進行純水洗淨,其後進行UV洗淨而加以清潔。其後,於室溫下,利用真空壓機將載體基板之第1主面、與含有未硬化之硬化性聚矽氧之層貼合,於30 Pa下靜置5分鐘,對含有未硬化之硬化性聚矽氧之層進行消泡處理,獲得硬化前積層體A0。此時,係以於含有未硬化之硬化性聚矽氧之層上留出不與載體基板接觸之周緣區域的方式,將載體基板積層於含有未硬化之硬化性聚矽氧之層上。再者,自載體基板之外周緣至未硬化之硬化性樹脂組合物層之外周緣為止之長度約為15 mm以上。Then, the surface of the supporting glass substrate having a length of 720 mm, a width of 600 mm, and a thickness of 0.4 mm and the contact side of the polyoxyxylene resin (the first main surface) is washed with pure water, and then cleaned by UV cleaning. . Thereafter, the first main surface of the carrier substrate was bonded to the layer containing the uncured curable polyfluorinated oxygen at room temperature by a vacuum press, and allowed to stand at 30 Pa for 5 minutes to contain unhardened. The layer of the hardenable polyfluorene is subjected to a defoaming treatment to obtain a layered body A0 before hardening. At this time, the carrier substrate is laminated on the layer containing the uncured curable polyfluorene so that the peripheral layer region which is not in contact with the carrier substrate is left on the layer containing the uncured curable polyfluorene oxide. Further, the length from the outer periphery of the carrier substrate to the outer periphery of the uncured curable resin composition layer is about 15 mm or more.

繼而,於大氣中、250℃下對其進行30分鐘加熱硬化,獲得厚度10 μm之包含經硬化之聚矽氧樹脂層的硬化後積層體A0。Then, it was heat-hardened in the air at 250 ° C for 30 minutes to obtain a cured laminated body A0 containing a hardened polyoxyn resin layer having a thickness of 10 μm.

繼而,將硬化後積層體A0之支持玻璃基板固定於安裝有定位夾具之壓盤上,利用鑽石砂輪刀,自壓盤之上面,以與支持玻璃基板之外周緣中之一邊重疊的方式,於薄板玻璃基板之第2主面上刻出切線後,利用夾持夾具夾住薄板玻璃之切線之外側並割斷。以相同之方式對薄板玻璃基板的與支持玻璃基板之外周緣之剩餘3邊重疊之外側亦進行割斷後,利用具有曲面之砥石研磨薄板玻璃基板之割斷面且實施倒角,獲得切斷後積層體A1。Then, the supporting glass substrate of the laminated body A0 after hardening is fixed on the pressure plate on which the positioning jig is mounted, and the diamond grinding wheel blade is used to overlap the one side of the outer periphery of the supporting glass substrate by the diamond grinding wheel cutter. After the tangential line is drawn on the second main surface of the thin glass substrate, the tangential side of the thin glass is sandwiched by a clamp to be cut. In the same manner, the outer side of the thin glass substrate and the remaining three sides of the outer periphery of the supporting glass substrate are also cut, and then the cut surface of the thin glass substrate is ground by a vermiculite having a curved surface, and chamfering is performed to obtain a laminated body after cutting. A1.

繼而,與實施例3同樣地進行剝離試驗。剝離成薄板玻璃基板與具有樹脂層之支持玻璃基板,於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+0.1 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。Then, a peeling test was performed in the same manner as in Example 3. The thin glass substrate and the supporting glass substrate having the resin layer are peeled off, and the residue of the resin layer is not present on the surface of the thin glass substrate after peeling (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off after peeling (on the conductive metal oxide film) was measured to be +0.1 kV by an electrostatic measuring device. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

<實施例5><Example 5>

除使用包含鈉鈣玻璃之玻璃板作為薄板玻璃基板及支持玻璃基板之外,藉由與實施例3相同之方法獲得薄板玻璃積層體B1。A thin plate glass laminate B1 was obtained by the same method as in Example 3 except that a glass plate containing soda lime glass was used as the thin glass substrate and the support glass substrate.

繼而,與實施例3同樣地進行剝離試驗。剝離成薄板玻璃基板與具有樹脂層之支持玻璃基板,於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+0.1 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。Then, a peeling test was performed in the same manner as in Example 3. The thin glass substrate and the supporting glass substrate having the resin layer are peeled off, and the residue of the resin layer is not present on the surface of the thin glass substrate after peeling (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off after peeling (on the conductive metal oxide film) was measured to be +0.1 kV by an electrostatic measuring device. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

<實施例6><Example 6>

除使用經化學強化之玻璃板作為薄板玻璃基板及支持玻璃基板之外,藉由與實施例3相同之方法獲得薄板玻璃積層體C1。A thin plate glass laminate C1 was obtained by the same method as in Example 3 except that a chemically strengthened glass plate was used as the thin glass substrate and the support glass substrate.

繼而,與實施例3同樣地進行剝離試驗。剝離成薄板玻璃基板與具有樹脂層之支持玻璃基板,於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)不存在樹脂層之殘渣。又,剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)之帶電電位藉由靜電測定器測定為+0.1 kV。於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上),使用常壓遙距電漿裝置(積水化學公司製造)實施電漿照射,並黏貼偏光膜(日東電工公司製造,丙烯酸系黏著劑),結果未產生剝離。Then, a peeling test was performed in the same manner as in Example 3. The thin glass substrate and the supporting glass substrate having the resin layer are peeled off, and the residue of the resin layer is not present on the surface of the thin glass substrate after peeling (on the conductive metal oxide film). Further, the charged potential of the surface of the thin glass substrate which was peeled off after peeling (on the conductive metal oxide film) was measured to be +0.1 kV by an electrostatic measuring device. On the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), the plasma is irradiated with a normal pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), and the polarizing film is adhered (Nitto Produced by an electrician company, an acrylic adhesive), and no peeling occurred.

再者,上述實施例1~6中所使用之薄板玻璃積層體A1於上述剝離試驗中,並不於聚矽氧樹脂層與支持玻璃基板之間,而係於聚矽氧樹脂層與薄板玻璃基板(附有導電性金屬氧化物膜之薄板玻璃基板)之間產生剝離。據此,可確認聚矽氧樹脂層與支持玻璃基板間的密接力大於聚矽氧樹脂層與薄板玻璃基板間的密接力,換言之,聚矽氧樹脂層與支持玻璃基板間的剝離強度高於聚矽氧樹脂層與薄板玻璃基板間的剝離強度。Further, in the above peeling test, the thin plate glass laminate A1 used in the above Examples 1 to 6 is not between the polyoxynated resin layer and the supporting glass substrate, but is bonded to the polyoxyxene resin layer and the thin plate glass. Peeling occurs between the substrate (thin glass substrate with a conductive metal oxide film). According to this, it is confirmed that the adhesion between the polyoxyxylene resin layer and the supporting glass substrate is greater than the adhesion between the polyoxynoxy resin layer and the thin glass substrate, in other words, the peeling strength between the polyoxy-resin layer and the supporting glass substrate is higher than Peel strength between the polyoxymethylene resin layer and the thin glass substrate.

<比較例1><Comparative Example 1>

代替實施例1所使用之附有導電性金屬氧化物膜之薄板玻璃基板,而使用長720 mm、寬600 mm、板厚0.3 mm,線膨脹係數38×10-7/℃之薄板玻璃基板(旭硝子股份有限公司製造之AN100),除此以外藉由與實施例1相同之工序獲得薄板玻璃積層體C1。於薄板玻璃積層體C1中不含導電性金屬氧化物膜。Instead of the thin-plate glass substrate with the conductive metal oxide film used in Example 1, a thin-plate glass substrate having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a coefficient of linear expansion of 38 × 10 -7 /°C was used ( A thin plate glass laminate C1 was obtained in the same manner as in Example 1 except that AN100 manufactured by Asahi Glass Co., Ltd. was used. The conductive metal oxide film is not contained in the thin plate glass laminate C1.

再者,對薄板玻璃基板的與聚矽氧樹脂接觸之側之面進行純水洗淨,其後進行UV洗淨而加以清潔。經清潔之薄板玻璃基板表面之水接觸角為8°。又,經清潔之薄板玻璃基板之表面粗糙度Ra為0.4 nm。Further, the surface of the thin glass substrate on the side in contact with the polyoxymethylene resin was washed with pure water, and then subjected to UV cleaning to be cleaned. The water contact angle of the surface of the cleaned sheet glass substrate was 8°. Further, the surface roughness Ra of the cleaned thin glass substrate was 0.4 nm.

繼而,藉由與實施例1相同之工序進行加熱處理後,將薄板玻璃積層體C1中之薄板玻璃基板與具有樹脂層之支持玻璃基板剝離。Then, after the heat treatment was carried out in the same manner as in Example 1, the thin glass substrate in the thin plate glass laminate C1 was peeled off from the support glass substrate having the resin layer.

剝離後之薄板玻璃基板的與樹脂層接觸之面上附著有樹脂層之一部分,且於支持玻璃基板上的相當於樹脂層之部分確認到破損。對附著有樹脂層之薄板玻璃基板使用常壓遙距電漿裝置(積水化學公司製造)照射電漿,但所附著之樹脂無法去除而殘留。剝離後剝離之薄板玻璃基板的與樹脂層接觸之面上之帶電電位為-10.5 kV。其後,將偏光膜(日東電工公司製造,丙烯酸系黏著劑)黏貼於薄板玻璃基板之經實施電漿照射之面上,結果產生剝離。One portion of the resin layer was adhered to the surface of the thin glass substrate after contact with the resin layer, and the portion corresponding to the resin layer on the supporting glass substrate was damaged. The thin-plate glass substrate to which the resin layer was adhered was irradiated with a plasma using a normal-pressure remote plasma device (manufactured by Sekisui Chemical Co., Ltd.), but the adhered resin could not be removed and remained. The charged potential on the surface of the thin glass substrate which was peeled off after peeling and the resin layer was -10.5 kV. Thereafter, a polarizing film (manufactured by Nitto Denko Corporation, an acrylic adhesive) was adhered to the surface of the thin glass substrate subjected to the plasma irradiation, and peeling occurred.

<比較例2><Comparative Example 2>

對長720 mm、寬600 mm、板厚0.3 mm,線膨脹係數38×10-7/℃之薄板玻璃基板(旭硝子股份有限公司製造之AN100)的與聚矽氧樹脂接觸之側之面進行純水洗淨,其後進行UV洗淨而加以清潔。進而,於經清潔之面上,藉由磁控濺鍍法(不加熱,成膜壓力5 mTorr,功率密度5 W/cm2)依序形成厚度50 nm之氧化鉻膜、及厚度100 nm之金屬鉻膜,獲得薄板玻璃基板(附有金屬鉻膜之薄板玻璃基板)。金屬鉻膜表面之水接觸角為25°。又,金屬鉻膜之表面粗糙度Ra為2.5 nm。For the side of the thin plate glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a linear expansion coefficient of 38 × 10 -7 /°C, which is in contact with the side of the polyoxyxylene resin, is pure. Wash with water, then clean with UV and clean. Further, on the cleaned surface, a chromium oxide film having a thickness of 50 nm and a thickness of 100 nm were sequentially formed by magnetron sputtering (no heating, film formation pressure: 5 mTorr, power density: 5 W/cm 2 ). A metal chromium film is obtained as a thin glass substrate (a thin glass substrate with a metallic chromium film). The water contact angle of the surface of the metal chromium film is 25°. Further, the surface roughness Ra of the metallic chromium film was 2.5 nm.

與實施例1同樣地,按照其工序於室溫下利用真空壓機,將薄板玻璃基板之金屬鉻膜面、與支持玻璃基板之聚矽氧樹脂層面貼合,而獲得薄板玻璃積層體B1。In the same manner as in the first embodiment, the metal chromium film surface of the thin glass substrate and the polyoxyxene resin layer of the supporting glass substrate were bonded together at room temperature in a vacuum press to obtain a thin glass laminated body B1.

繼而,按照與實施例1相同之工序進行加熱處理後,將薄板玻璃積層體B1中之薄板玻璃基板與具有樹脂層之支持玻璃基板剝離。Then, after the heat treatment was carried out in the same manner as in Example 1, the thin glass substrate in the thin plate glass laminate B1 was peeled off from the support glass substrate having the resin layer.

與比較例1同樣地,於剝離後之薄板玻璃基板的與樹脂層接觸之面上(金屬鉻膜上)附著有樹脂層之一部分,且於支持玻璃基板上的相當於樹脂層之部分確認到破損。In the same manner as in the case of the comparative example 1, a part of the resin layer was adhered to the surface of the thin glass substrate after contact with the resin layer (on the metal chromium film), and the portion corresponding to the resin layer on the supporting glass substrate was confirmed. damaged.

<比較例3><Comparative Example 3>

與實施例1同樣地,於支持玻璃基板之第1主面形成厚度20 μm之聚矽氧樹脂層。繼而,除使用長720 mm、寬600 mm、板厚0.3 mm,線膨脹係數38×10-7/℃之薄板玻璃基板(旭硝子股份有限公司製造之AN100)之外,藉由與實施例1相同之工序獲得薄板玻璃積層體C2。再者,對薄板玻璃基板的與聚矽氧樹脂接觸之側之面進行純水洗淨而加以清潔。經清潔之薄板玻璃基板表面之水接觸角為30°。又,經清潔之薄板玻璃基板之表面粗糙度Ra為0.4 nm。再者,該比較例中,與比較例1不同,未對薄板玻璃基板進行UV洗淨。In the same manner as in Example 1, a polyoxynoxy resin layer having a thickness of 20 μm was formed on the first main surface of the supporting glass substrate. Then, except that a thin plate glass substrate (AN100 manufactured by Asahi Glass Co., Ltd.) having a length of 720 mm, a width of 600 mm, a thickness of 0.3 mm, and a coefficient of linear expansion of 38 × 10 -7 /° C. was used, the same as in Example 1. In the process, a thin plate glass laminate C2 is obtained. Further, the surface of the thin glass substrate which is in contact with the polyoxyxene resin is washed with pure water and cleaned. The water contact angle of the surface of the cleaned sheet glass substrate was 30°. Further, the surface roughness Ra of the cleaned thin glass substrate was 0.4 nm. Further, in this comparative example, unlike Comparative Example 1, the thin glass substrate was not subjected to UV cleaning.

其後,按照與實施例1相同之工序進行加熱處理後,將薄板玻璃積層體C2中之薄板玻璃基板與具有樹脂層之支持玻璃基板剝離。Thereafter, the heat treatment was carried out in the same manner as in Example 1, and then the thin glass substrate in the thin glass laminated body C2 was peeled off from the supporting glass substrate having the resin layer.

與比較例1同樣地,於剝離後之薄板玻璃基板的與樹脂層接觸之面上(導電性金屬氧化物膜上)附著有樹脂層之一部分,於支持玻璃基板上的相當於樹脂層之部分確認到破損。In the same manner as in Comparative Example 1, a part of the resin layer was adhered to the surface of the thin glass substrate after contact with the resin layer (on the conductive metal oxide film), and the portion corresponding to the resin layer on the supporting glass substrate Confirmed damage.

以上詳細地且參照特定之實施態樣對本發明進行了說明,但業者明瞭可於不脫離本發明之範圍及精神之情況下追加各種修正或變更。The present invention has been described in detail above with reference to the specific embodiments thereof. It is understood that various modifications and changes may be made without departing from the scope and spirit of the invention.

本申請案係基於2010年11月5日提出申請之日本專利申請案2010-248294者,其內容作為參照而併入本文中。The present application is based on Japanese Patent Application No. 2010-248294 filed on Nov. 5, 2010, the content of

10...積層體10. . . Laminated body

20...基板20. . . Substrate

22...導電性金屬氧化物膜twenty two. . . Conductive metal oxide film

24...附有導電性金屬氧化物膜之基板twenty four. . . Substrate with conductive metal oxide film

30...加強板30. . . Reinforcing plate

31...支持板31. . . Support board

32...樹脂層32. . . Resin layer

40...附有支持板之顯示裝置用面板40. . . Panel for display device with support plate

50...顯示裝置用面板之構成構件50. . . Component of panel for display device

60...顯示裝置用面板60. . . Display panel

201...基板之第1主面201. . . First main surface of the substrate

202...基板之第2主面202. . . Second main surface of the substrate

221...導電性金屬氧化物膜之表面221. . . Surface of conductive metal oxide film

321...樹脂層之密接面321. . . Adhesive layer

圖1係本發明之積層體之一實施形態的示意性剖面圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an embodiment of a laminate of the present invention.

圖2係本發明之附有支持板之顯示裝置用面板之一實施形態的示意性剖面圖。Fig. 2 is a schematic cross-sectional view showing an embodiment of a panel for a display device with a support plate according to the present invention.

10...積層體10. . . Laminated body

20...基板20. . . Substrate

22...導電性金屬氧化物膜twenty two. . . Conductive metal oxide film

24...附有導電性金屬氧化物膜之基板twenty four. . . Substrate with conductive metal oxide film

30...加強板30. . . Reinforcing plate

31...支持板31. . . Support board

32...樹脂層32. . . Resin layer

201...基板之第1主面201. . . First main surface of the substrate

202...基板之第2主面202. . . Second main surface of the substrate

221...導電性金屬氧化物膜之表面221. . . Surface of conductive metal oxide film

321...樹脂層之密接面321. . . Adhesive layer

Claims (9)

一種積層體,其依序包含:支持板;樹脂層;及附有氧化銦錫(ITO)膜之基板,其係於基板之表面上具有氧化銦錫(ITO)膜;上述附有氧化銦錫(ITO)膜之基板係以上述氧化銦錫(ITO)膜與上述樹脂層可剝離地密接之方式而配置於上述樹脂層上,上述樹脂層與上述支持板間的剝離強度高於上述樹脂層與上述附有氧化銦錫(ITO)膜之基板間的剝離強度。 A laminated body comprising: a support plate; a resin layer; and a substrate with an indium tin oxide (ITO) film attached to the surface of the substrate and having an indium tin oxide (ITO) film; The substrate of the (ITO) film is disposed on the resin layer such that the indium tin oxide (ITO) film is detachably adhered to the resin layer, and the peel strength between the resin layer and the support sheet is higher than the resin layer. Peel strength between the substrate with the indium tin oxide (ITO) film described above. 如請求項1之積層體,其中上述氧化銦錫(ITO)中進而含有選自由鋁、鉬、銅、釩、鈮、鉭、硼及氟所組成之群中之至少一種元素。 The laminate according to claim 1, wherein the indium tin oxide (ITO) further contains at least one element selected from the group consisting of aluminum, molybdenum, copper, vanadium, niobium, tantalum, boron, and fluorine. 請求項1之積層體,其中上述樹脂層為聚矽氧樹脂層。 The laminate of claim 1, wherein the resin layer is a polyoxynitride resin layer. 如請求項2之積層體,其中上述樹脂層為聚矽氧樹脂層。 The laminate according to claim 2, wherein the resin layer is a polyoxymethylene resin layer. 如請求項1至4中任一項之積層體,其中上述樹脂層包含有機烯基聚矽氧烷與有機氫聚矽氧烷之加成反應型硬化物。 The laminate according to any one of claims 1 to 4, wherein the resin layer comprises an addition reaction type hardened material of an organic alkenyl polysiloxane and an organic hydrogen polyoxyalkylene. 如請求項5之積層體,其中上述有機氫聚矽氧烷之矽原子上鍵結之氫原子相對於上述有機烯基聚矽氧烷之烯基的莫耳比為0.5~2。 The laminate according to claim 5, wherein the molar ratio of the hydrogen atom bonded to the ruthenium atom of the above organohydrogenpolyoxyalkylene to the alkenyl group of the above organic alkenyl polyoxyalkylene is 0.5 to 2. 一種附有支持板之顯示裝置用面板,其包含:如請求項1至6中任一項之積層體;及顯示裝置用面板之構成構件,其係設置於上述積層體中之上述附有氧化銦錫(ITO)膜之基板的與密接上述樹脂層之表面為相反側之表面上。 A panel for a display device with a support plate, comprising: a laminate according to any one of claims 1 to 6; and a constituent member of a panel for a display device, which is provided in the laminate and oxidized The substrate of the indium tin (ITO) film is on the surface opposite to the surface on which the resin layer is adhered. 一種顯示裝置用面板,其係使用如請求項7之附有支持板之顯示裝置用面板而形成者。 A panel for a display device which is formed using a panel for a display device with a support plate as claimed in claim 7. 一種顯示裝置,其包含如請求項8之顯示裝置用面板。A display device comprising a panel for a display device as claimed in claim 8.
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