TWI525701B - 自具有銅、金屬硬遮罩及低k介電材料之基板移除光阻、蝕刻殘留物及氧化銅之方法及組合物 - Google Patents
自具有銅、金屬硬遮罩及低k介電材料之基板移除光阻、蝕刻殘留物及氧化銅之方法及組合物 Download PDFInfo
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- TWI525701B TWI525701B TW101129599A TW101129599A TWI525701B TW I525701 B TWI525701 B TW I525701B TW 101129599 A TW101129599 A TW 101129599A TW 101129599 A TW101129599 A TW 101129599A TW I525701 B TWI525701 B TW I525701B
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- composition
- group
- tin
- low
- copper
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 80
- 239000010949 copper Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 19
- 229910052802 copper Inorganic materials 0.000 title claims description 16
- 239000003989 dielectric material Substances 0.000 title claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 title claims description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title claims description 8
- 239000005751 Copper oxide Substances 0.000 title claims description 8
- 229910000431 copper oxide Inorganic materials 0.000 title claims description 8
- 239000002184 metal Substances 0.000 title description 38
- 229910052751 metal Inorganic materials 0.000 title description 38
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 47
- -1 etching residue Substances 0.000 claims description 24
- 239000007800 oxidant agent Substances 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 18
- 230000007797 corrosion Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 18
- 239000003112 inhibitor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 5
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 5
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012935 ammoniumperoxodisulfate Substances 0.000 claims description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 3
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 description 28
- 238000004140 cleaning Methods 0.000 description 14
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 13
- 238000009472 formulation Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000007373 indentation Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 4
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical compound NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
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- 230000010287 polarization Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WGJCBBASTRWVJL-UHFFFAOYSA-N 1,3-thiazolidine-2-thione Chemical compound SC1=NCCS1 WGJCBBASTRWVJL-UHFFFAOYSA-N 0.000 description 1
- NXRIDTLKJCKPOG-UHFFFAOYSA-N 1,4-dihydroimidazole-5-thione Chemical compound S=C1CN=CN1 NXRIDTLKJCKPOG-UHFFFAOYSA-N 0.000 description 1
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- FJNLCHNQVJVCPY-UHFFFAOYSA-N 2-n-methoxy-2-n-methyl-4-n,6-n-dipropyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCCNC1=NC(NCCC)=NC(N(C)OC)=N1 FJNLCHNQVJVCPY-UHFFFAOYSA-N 0.000 description 1
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 description 1
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- JVSMPWHQUPKRNV-UHFFFAOYSA-N 2h-tetrazol-5-amine;hydrate Chemical compound O.NC=1N=NNN=1 JVSMPWHQUPKRNV-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- GVSNQMFKEPBIOY-UHFFFAOYSA-N 4-methyl-2h-triazole Chemical compound CC=1C=NNN=1 GVSNQMFKEPBIOY-UHFFFAOYSA-N 0.000 description 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- HCEKEODXLSQFDV-UHFFFAOYSA-N 5-methyltriazol-1-amine Chemical compound CC1=CN=NN1N HCEKEODXLSQFDV-UHFFFAOYSA-N 0.000 description 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 description 1
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 description 1
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical compound CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- DHOCGIHFPKXZJB-UHFFFAOYSA-N [Cl+].N[H] Chemical compound [Cl+].N[H] DHOCGIHFPKXZJB-UHFFFAOYSA-N 0.000 description 1
- OLYKTICNIVCGSY-UHFFFAOYSA-N [O-2].[Ce+3].[C+4] Chemical compound [O-2].[Ce+3].[C+4] OLYKTICNIVCGSY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 1
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical group 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000004977 peroxyborates Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- LDGFRUUNCRYSQK-UHFFFAOYSA-N triazin-4-ylmethanediamine Chemical compound NC(N)C1=CC=NN=N1 LDGFRUUNCRYSQK-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
現在所揭示並主張之發明性概念係關於清潔積體電路基板之組合物及方法,且更具體而言係關於自包含銅、低k介電材料及金屬硬遮罩(例如TiN、TiNxOy及W)之基板有效移除光阻、蝕刻後殘留物及/或極化後殘留物的包含鹵陰離子之組合物及方法。
臨界尺寸為約90奈米(nm)之裝置已涉及銅導體與低k電介質之整合,且其需要交替材料沈積製程及極化製程。隨著技術節點發展到45 nm及更小,半導體裝置之大小減小使得達成通孔及溝槽之臨界特徵控制更具挑戰性。積體電路裝置公司正在研究使用金屬硬遮罩來改良對低k材料之蝕刻敏感性且藉此獲得更佳之特徵控制。
為獲得高產率及低電阻互連,必須在下一處理步驟之前移除側壁上聚合物及在蝕刻期間產生之在通孔底部處之顆粒/聚合物殘留物。清潔溶液亦可有效地蝕刻所選硬遮罩以形成中間形貌(例如,縮進/圓形形貌)將極為有益。縮進/圓形形貌可防止底切硬遮罩,進而可能夠達成障壁金屬、Cu晶種層及Cu填充之可靠沈積。另一選擇為,使用相同組合物完全移除金屬硬遮罩因消除對障壁CMP之需要可對下游處理步驟、尤其化學機械拋光(CMP)提供多種益處。
幾乎在製作製程中之每一步驟(例如,極化步驟、刻槽
步驟或蝕刻步驟)後皆需要清潔製程來移除留下且若未有效移除會污染裝置表面之電漿蝕刻、氧化劑、磨料、金屬及/或其他液體或微粒的殘留物。需要銅導體及低k介電材料(通常為碳-二氧化矽或多孔二氧化矽材料)之先進產生裝置之製作產生材料可與各類先前技術清潔劑反應及受其損害兩個問題。
具體而言,在清潔處理中可能損害低k電介質,如由蝕刻、多孔性/大小之變化及介電性質之最終變化所證明。移除殘留物所需之時間取決於殘留物之性質、生成其之處理(加熱、交聯、蝕刻、烘烤及/或灰化)及使用分批抑或單一晶圓清潔製程。一些殘留物可在極短時間段內清除,而一些殘留物需要遠遠更久之清潔製程。在與清潔劑接觸之期間內與低k電介質及銅導體二者之相容性係期望特性。
當在先進處理銅/低k半導體裝置中在乾蝕刻處理期間使用TiN、TiNxOy或W作為蝕刻硬遮罩來獲得對低k材料之高選擇性時,可選擇性蝕刻TiN、TiNxOy或W之有效清潔組合物必須不僅與銅及低k材料相容,而且必須有效同時移除聚合材料及蝕刻殘留物。
隨著裝置臨界尺寸之不斷減小及對生產效率及裝置效能之不斷需要,需要改良之清潔組合物。
當前所主張並揭示之發明性概念係關於自基板移除光阻、聚合材料、蝕刻殘留物及氧化銅之改良之半導體處理組合物(即,濕清潔調配物),其中該基板包含銅、低k介電
材料及選自TiN、TiNxOy或W之金屬硬遮罩。該組合物包含水、至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑及至少一種Cu腐蝕抑制劑。在金屬硬遮罩係TiN或TiNxOy之情形下,對於最佳結果而言,該組合物亦將視需要包括鹼(即,氫氧化物來源)以將該組合物之pH維持在至少7或以上之值。在金屬硬遮罩係W之情形下,pH工作範圍可為鹼性或酸性且達成令人滿意之結果。
氧化劑選自由下列組成之群:過氧化氫、臭氧、氯化鐵、過錳酸鹽、過氧硼酸鹽、過氯酸鹽、過硫酸鹽、過氧二硫酸銨、過乙酸、過氧化氫脲、過碳酸鹽、過硼酸鹽及其混合物。Cu腐蝕抑制劑選自由含有呈=N-形式之氮原子作為環形成成員之雜環化合物組成之群。雜環化合物可單一使用或Cu腐蝕抑制劑可包含該等雜環化合物之混合物。另外,硫醇、硫脲及其衍生物亦可在抑制Cu腐蝕方面產生令人滿意之結果。
在第二實施例中,本發明包含自包含銅、低k介電材料及TiN、TiNxOy或W之基板同時移除光阻、聚合材料、蝕刻殘留物及氧化銅中之一或多者的方法。該方法包含將水性組合物施加至基板,該水性組合物基本上由至少一種選自Cl-或Br-之鹵陰離子、至少一種選自上文所陳述之群之氧化劑及至少一種選自上文所陳述之群之Cu腐蝕抑制劑組成。在金屬硬遮罩係TiN或TiNxOy之情形下,對於最佳結果而言,該組合物亦將視需要包括鹼(即,氫氧化物來源)以將該組合物之pH維持在至少7或以上之值。在金屬硬遮
罩係W之情形下,pH工作範圍可為鹼性或酸性且達成令人滿意之結果。在任一所展示處理步驟中移除之不合意殘留物之量將影響對組合物操作pH值之選擇。
根據本文所述發明性概念之組合物及方法能夠獨特地選擇性蝕刻TiN、TiNxOy或W,與Cu及低k介電材料相容,且亦可自所處理基板同時移除氧化銅、聚合材料及蝕刻殘留物。根據本發明調配且對TiN、TiNxOy或W展示本質上高蝕刻速率之組合物能夠在低溫(例如,小於55℃之溫度)下處理。低溫處理展示減小之氧化劑分解速率,進而延長可用組合物浴壽命。另外,展示高TiN、TiNxOy或W蝕刻速率之本發明組合物係合意的,此乃因其可減少裝置處理時間且藉此增加裝置通量。通常,已藉由增加處理溫度來達成TiN、TiNxOy或W蝕刻速率。然而,對於單一晶圓處理應用,最高處理溫度為約55℃,進而可限制TiN蝕刻速率之上限,且藉此限制TiN金屬硬遮罩之完全移除。本發明組合物可在20℃至55℃之溫度範圍內利用單一晶圓工具應用對TiN、TiNxOy或W有效遞送高蝕刻速率,且若需要,可利用單一晶圓應用處理設備完全移除TiN、TiNxOy或W金屬硬遮罩。
應認識到,本發明組合物之各組份可相互作用,且因此,任一組合物皆表示為當添加至一起時形成組合物之各組份之量。除非另有明確說明,否則以百分比給出之任一組合物皆係已添加至組合物中之該組份之重量百分比。當
將組合物描述為實際上不含特定組份時,通常提供數值範圍以引導熟習此項技術者瞭解「實際上不含」之含義,但在所有情形下,「實際上不含」皆涵蓋組合物完全不含該特定組份之較佳實施例。
根據第一實施例,本發明係包含水、至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑、至少一種Cu腐蝕抑制劑及至少一種氫氧化物來源之半導體處理組合物。該等調配物較佳具有7.0及更高之pH用於移除包含TiN及TiNxOy之硬遮罩。對於移除包含W之硬遮罩而言,該組合物包含水、至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑、至少一種Cu腐蝕抑制劑,且pH值可介於酸性至鹼性之間。本發明組合物自包括銅、低k介電材料及選自TiN、TiNxOy或W之金屬硬遮罩之基板有效地同時移除光阻、聚合材料、蝕刻殘留物及氧化銅。該清潔組合物可有效地蝕刻金屬硬遮罩以形成中間形貌(例如,縮進/圓形形貌),如圖1B中概略地顯示。然而,該組合物亦能夠完全移除金屬硬遮罩,如圖1C中概略地顯示。
圖1A係半導體裝置之剖視圖,其顯示銅導體10與低k介電材料11、金屬硬遮罩12及夾層絕緣膜13之關係。夾層絕緣膜將通常為p型TEOS(四乙基正矽酸鹽)膜或SiON(視來源而定)。在裝置製作中在典型處理步驟後留下蝕刻殘留物、聚合物、光阻14。
根據本文所述發明性概念之組合物及方法能夠獨特地選擇性蝕刻金屬硬遮罩(例如,TiN、TiNxOy及W),藉此僅
部分地移除金屬硬遮罩以形成縮進角圓化型式15,如圖1B中所顯示。中間縮進角圓化型式甚為重要,此乃因其可防止底切硬遮罩,因此能夠達成障壁金屬、Cu晶種層及Cu填充之可靠沈積。另一選擇為,可完全移除金屬硬遮罩,如圖1C中所顯示。完全移除硬遮罩消除對障壁CMP及後續CMP後清潔步驟之需要且藉此改良裝置之製作產率。
根據本文所述發明性概念之組合物及方法尤其適用於在單一晶圓設備中處理單一晶圓,其中在60℃範圍內之較高處理溫度係合意的。然而,已知較高溫度促進氧化劑降格,從而縮短浴壽命。已觀察到,根據本文所述發明性概念,可在20℃至55℃範圍內之實質上較低溫度下處理多個晶圓以產生TiN縮進型式或完全地移除TiN金屬硬遮罩方面達成令人滿意之結果。
可用於發明性概念之氧化劑選自移除金屬電子且增大原子價之任一物質且包括但不限於由下列組成之群:過氧化氫(H2O2)、臭氧、氯化鐵、過錳酸鹽、過氧硼酸鹽、過氯酸鹽、過硫酸鹽、過氧二硫酸銨、過乙酸、過氧化氫脲、硝酸(HNO3)、亞氯酸銨(NH4ClO2)、氯酸銨(NH4ClO3)、碘酸銨(NH4IO3)、過硼酸銨(NH4BO3)、過氯酸銨(NH4ClO4)、過碘酸銨(NH4IO3)、過硫酸銨((NH4)2S2O8)、四甲基亞氯酸銨((N(CH3)4)ClO2)、四甲基氯酸銨((N(CH3)4)ClO3)、四甲基碘酸銨((N(CH3)4)IO3)、四甲基過硼酸銨((N(CH3)4)BO3)、四甲基過氯酸銨((N(CH3)4)ClO4)、四甲基過碘酸銨
((N(CH3)4)IO4)、四甲基過硫酸銨((N(CH3)4)S2O8)、((CO(NH2)2)H2O2)、過乙酸(CH3(CO)OOH)及其混合物。在上述中,H2O2係最佳不含金屬之氧化劑且提供處理便利性及相對較低之成本。
氧化劑或其混合物可以約0.0001 wt%至約60 wt%且較佳地對於最佳結果而言以約1 wt%至約20 wt%存於組合物中。
本發明可用之Cu腐蝕抑制劑選自由含有呈=N-形式之氮原子作為環形成成員之雜環化合物組成之群,例如吡咯及其衍生物、吡唑及其衍生物、咪唑及其衍生物、三唑及其衍生物、吲唑及其衍生物及硫醇-三唑及其衍生物、苯并三唑、甲苯基三唑、5-苯基-苯并三唑、5-硝基-苯并三唑、3-胺基-5-巰基-1,2,4-三唑、1-胺基-1,2,4-三唑、羥基苯并三唑、2-(5-胺基-戊基)-苯并三唑、1-胺基-1,2,3-三唑、1-胺基-5-甲基-1,2,3-三唑、3-胺基-1,2,4-三唑、3-巰基-1,2,4-三唑、3-異丙基-1,2,4-三唑、5-苯基硫醇-苯并三唑、鹵基-苯并三唑(鹵基=F、Cl、Br或I)、萘并三唑、2-巰基苯并咪唑(MBI)、2-巰基苯并噻唑、4-甲基-2-苯基咪唑、2-巰基噻唑啉、5-胺基四唑、5-胺基四唑一水合物、5-胺基-1,3,4-噻二唑-2-硫醇、2,4-二胺基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑啶酮、1,5-五亞甲基四唑、1-苯基-5-巰基四唑、二胺基甲基三嗪、咪唑啉硫酮、巰基苯并咪唑、4-甲基-4H-1,2,4-三唑-
3-硫醇、5-胺基-1,3,4-噻二唑-2-硫醇、苯并噻唑及其混合物。在上述中,對於處理便利性及相對較低成本而言,吡唑係較佳Cu腐蝕抑制劑。
Cu腐蝕抑制劑或其混合物可以約0.0001 wt%至約30 wt%且較佳地對於最佳結果而言以約0.01 wt%至約10 wt%存於組合物中。
鹵陰離子組份可選自能夠產生Cl-及Br-陰離子之任何化學化合物,例如NH4Cl、NH4Br、四級溴化銨NR4 (+)Br(-)或四級氯化銨NR4 (+)Cl(-),R係烷基或芳基。較佳化合物包括但不限於NH4Cl及NH4Br。
鹵陰離子可以約0.001 wt%至約20 wt%之濃度存於組合物中。當鹵陰離子以約0.05 wt%至約5 wt%範圍存於組合物中時,觀察到最佳結果。
現參照以下發明性概念及比較實例來說明本發明組合物,但本發明不受此等實例限制。
表1A及1B以及表6A、6B及6C中所顯示之組合物係使用水作為溶劑、吡唑作為Cu腐蝕抑制劑、H2O2作為氧化劑及二甘醇胺(DGA)作為鹼以調節pH來製備。表5A中所顯示之組合物係使用水作為溶劑、吡唑作為Cu腐蝕抑制劑、H2O2作為氧化劑及乙醇酸(GA)以調節pH來製備。通常可使用任一適宜酸或鹼(即,用於酸性調配物之質子來源或用於鹼性調配物之氫氧化物來源)來調節組合物pH,從而不會
對所處理半導體裝置產生不利影響。在7.0至9.0之pH範圍內在20℃下10分鐘、在30℃下10分鐘及在55℃下5分鐘後實施TiN及Cu蝕刻速率評價。使用四維四點探針計333A來量測TiN及Cu厚度,藉此膜之電阻率與留下膜之厚度相關。將蝕刻速率計算為厚度變化(在化學處理之前及之後)除以化學處理時間。用Beckman 260 pH/Temp/mV計來量測化學溶液pH。用於此等實驗中之H2O2係半導體級PURANAL(Aldrich 40267)。在30℃下經90秒實施殘留物移除效能實驗,並自SEM結果(Hitachi S-5500)評價殘留物移除效率及TiN縮進。分別在30℃及50℃下經30分鐘實施TEOS蝕刻速率實驗。用Horiba JoBin Yvon自動SE光譜偏振儀來量測TEOS厚度。將TEOS蝕刻速率計算為厚度變化(在化學處理之前及之後)除以化學處理時間。
製備表1A及1B中所顯示之調配物並在30℃之溫度下如上文所述實施TiN及Cu蝕刻速率評價。
在30℃下之TiN蝕刻速率結果以圖表方式顯示於圖2、3、4及5中,其中針對NH4Cl及NH4Br可看到,對TiN金屬硬遮罩之蝕刻速率隨著鹵陰離子濃度自0 wt%增加至0.3 wt%而增加;且表2中之低Cu蝕刻速率表明組合物之化學組份與Cu相容。
在20℃之溫度下如上文所述實施TiN及Cu蝕刻速率評價。
在20℃下之TiN蝕刻速率結果以圖表方式顯示於圖6及7中,其中針對NH4Cl及NH4Br可看到,對TiN金屬硬遮罩之蝕刻速率隨著鹵陰離子濃度自0 wt%增加至0.3 wt%而增加,且表3中之低Cu蝕刻速率顯示組合物之化學組份與Cu相容。
在55℃之溫度下如上文所述實施TiN及Cu蝕刻速率評價。
在55℃下之TiN蝕刻速率結果以圖表方式顯示於圖8及9中,其中針對NH4Cl及NH4Br可看到,對TiN金屬硬遮罩之蝕刻速率隨著鹵陰離子濃度自0 wt%之值增加至0.3 wt%之值而增加,且表4中之低Cu蝕刻速率指示組合物中之化學組份與Cu相容。
TiN移除之SEM照片顯示於圖10中。TiN硬遮罩縮進隨著NH4Br(或NH4Cl)濃度自0%增加至0.05%變得更明顯(NH4Br顯示於圖10A及圖10B中,且NH4Cl顯示於圖10A及圖10E
中),且在40℃下用0.3 wt% NH4Br(或NH4Cl)調配物完全移除TiN(圖10C及圖10F)。在不存在NH4Br(或NH4Cl)之情況下,當處理溫度自40℃增加至50℃時,TiN縮進變得更明顯(圖10A至圖10G)。在40℃下用0.3% NH4Br(或NH4Cl)調配物(圖10C及圖10F)且在50℃下用0.05% NH4Br(或NH4Cl)(圖10H及圖10I)達成完全TiN移除。該等結果指示為達成固定TiN蝕刻速率(即,為形成特定TiN縮進形貌),含有NH4Br(或NH4Cl)之調配物需要比不含NH4Br(或NH4Cl)之調配物遠遠更低之處理溫度,且TiN蝕刻速率隨著NH4Br(或NH4Cl)濃度增加而增加。添加NH4Br(或NH4Cl)使得能夠用單一晶圓應用處理設備完全移除TiN金屬硬遮罩。
製備表1以及表5A及5B中所顯示之調配物,並在30℃下如上文所述實施W蝕刻速率評價。
該等結果以圖表方式顯示於圖11、12、13及14中,其中針對NH4Cl及NH4Br可看到,對W金屬硬遮罩之蝕刻速率隨著鹵陰離子濃度自0 wt%增加至0.3 wt%(自酸性至鹼性之pH範圍)而增加。
製備表6A、6B及6C中所顯示之組合物並分別在30℃及50℃之溫度下如上文所述實施TEOS蝕刻速率評價。
TEOS蝕刻速率結果以圖表方式顯示於圖15及16中,其中可看到,納入NH4Cl或NH4Br,對TEOS之蝕刻速率隨著鹵陰離子濃度自0 wt%增加至5 wt%仍無明顯增加。相比之下,TEOS蝕刻速率隨著NH4F濃度自0 wt%增加至5 wt%而增加。該等結果指示含有鹵陰離子Cl-或Br-之組合物不會蝕刻TEOS。低k材料由多孔TEOS組成,且此結果指示具有NH4Br(或NH4Cl)之調配物與低k材料相容。
如上文所述處理晶圓,且清潔效能結果顯示於圖17中,其圖解說明在30℃下經90秒化學處理後令人滿意地移除蝕刻殘留物。
根據本文所述發明性概念之組合物及方法具有極佳性質且能夠獨特地選擇性蝕刻TiN、TiNxOy或W金屬硬遮罩,與Cu及低k介電材料相容,且亦可自所處理基板同時移除氧化銅、聚合材料及蝕刻殘留物。
10‧‧‧銅導體
11‧‧‧低k介電材料
12‧‧‧金屬硬遮罩
13‧‧‧夾層絕緣膜
14‧‧‧光阻
15‧‧‧縮進角圓化型式
圖1A至1C係半導體裝置在接收時及在根據發明性概念處理期間及之後的剖視圖。
圖2及3係在pH 8.7及30℃下金屬硬遮罩蝕刻速率對鹵陰離子濃度之圖形。
圖4及5係在pH 7及30℃下金屬硬遮罩蝕刻速率對鹵陰離子濃度之圖形。
圖6及7係在pH 8.7及20℃下金屬硬遮罩蝕刻速率對鹵陰離子濃度之圖形。
圖8及9係在pH 8.7及55℃下金屬硬遮罩蝕刻速率對鹵陰離子濃度之圖形。
圖10A至10I係使用本發明組合物之TiN金屬硬遮罩移除之SEM影像。
圖11至14係在30℃及3.4及8.7之pH值下W金屬硬遮罩蝕刻速率之圖形。
圖15係在30℃及pH 7下TEOS蝕刻速率對NH4Cl、NH4Br及NH4F之圖形。
圖16係在50℃及pH 7下TEOS蝕刻速率對NH4Cl、NH4Br及NH4F之圖形。
圖17A及17D係晶圓在接收時及在經本發明組合物處理之後之清潔結果的SEM影像。
10‧‧‧銅導體
11‧‧‧低k介電材料
12‧‧‧金屬硬遮罩
13‧‧‧夾層絕緣膜
14‧‧‧光阻
15‧‧‧縮進角圓化型式
Claims (9)
- 一種用於自包括銅、低k介電材料及選自TiN或TiNxOy之硬遮罩之基板移除光阻、聚合材料、蝕刻殘留物及氧化銅之半導體處理組合物,該組合物包含水、至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑、至少一種Cu腐蝕抑制劑及至少一種氫氧化物來源。
- 如請求項1之半導體處理組合物,其中pH值為至少7.0或更高。
- 一種用於自包括銅、低k介電材料及選自W之硬遮罩之基板移除光阻、聚合材料、蝕刻殘留物及氧化銅之半導體處理組合物,該組合物包含水、至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑及至少一種Cu腐蝕抑制劑。
- 如請求項1或3之半導體處理組合物,其中(a)該氧化劑選自由下列組成之群:過氧化氫、臭氧、氯化鐵、過錳酸鹽、過氧硼酸鹽、過氯酸鹽、過硫酸鹽、過氧二硫酸銨、過乙酸、過氧化氫脲、過碳酸鹽、過硼酸鹽及其混合物,且(b)該Cu腐蝕抑制劑選自由含有呈=N-形式之氮原子作為環形成成員之雜環化合物及其混合物組成之群。
- 一種自包含Cu、低k介電材料及TiN或TiNxOy之半導體裝置同時移除聚合材料及蝕刻殘留物並選擇性蝕刻TiN或TiNxOy之方法,其包含:使該半導體裝置與包含至少一種選自Cl-或Br-之鹵陰離子、至少一種氧化劑、至少 一種Cu腐蝕抑制劑及至少一種氫氧化物來源之水性組合物接觸。
- 如請求項5之方法,其中pH具有至少7.0或更高之值。
- 如請求項5之方法,其中溫度係在20℃至約60℃之範圍內且該氧化劑選自由下列組成之群:過氧化氫、臭氧、氯化鐵、過錳酸鹽、過氧硼酸鹽、過氯酸鹽、過硫酸鹽、過氧二硫酸銨、過乙酸、過氧化氫脲、過碳酸鹽、過硼酸鹽及其混合物。
- 如請求項5或7之方法,其中該Cu腐蝕抑制劑選自由含有呈=N-形式之氮原子作為環形成成員之雜環化合物及其混合物組成之群。
- 如請求項1之組合物,其中該氫氧化物來源係以足以將該pH值調節至至少7.0之濃度存於該組合物中。
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US9070625B2 (en) * | 2012-01-04 | 2015-06-30 | International Business Machines Corporation | Selective etch chemistry for gate electrode materials |
KR102105381B1 (ko) | 2012-02-15 | 2020-04-29 | 엔테그리스, 아이엔씨. | 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법 |
SG11201507014RA (en) | 2013-03-04 | 2015-10-29 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
US9472420B2 (en) | 2013-12-20 | 2016-10-18 | Air Products And Chemicals, Inc. | Composition for titanium nitride hard mask and etch residue removal |
WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
US9293365B2 (en) | 2014-03-27 | 2016-03-22 | Globalfoundries Inc. | Hardmask removal for copper interconnects with tungsten contacts by chemical mechanical polishing |
US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
US10312137B2 (en) * | 2016-06-07 | 2019-06-04 | Applied Materials, Inc. | Hardmask layer for 3D NAND staircase structure in semiconductor applications |
US11499236B2 (en) * | 2018-03-16 | 2022-11-15 | Versum Materials Us, Llc | Etching solution for tungsten word line recess |
CN110713868A (zh) * | 2018-07-13 | 2020-01-21 | 巴斯夫欧洲公司 | 可移除氮化钛的蚀刻后残渣清理溶液 |
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