TWI524451B - Semiconductor processing apparatus - Google Patents
Semiconductor processing apparatus Download PDFInfo
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- TWI524451B TWI524451B TW100148951A TW100148951A TWI524451B TW I524451 B TWI524451 B TW I524451B TW 100148951 A TW100148951 A TW 100148951A TW 100148951 A TW100148951 A TW 100148951A TW I524451 B TWI524451 B TW I524451B
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Description
本發明是有關於一種半導體製程設備,且特別是有關於一種適用於真空處理的半導體製程設備。This invention relates to a semiconductor process apparatus, and more particularly to a semiconductor process apparatus suitable for vacuum processing.
在平面顯示器及半導體裝置的製程中,包含諸如沉積、蝕刻與測試等製程,傳統上需在真空腔室中執行,且目前大多是透過負載鎖定腔室(load lock chamber)將基板傳入或傳出真空反應腔室。負載鎖定腔室提供介於大氣壓力和真空反應腔室壓力之間的階段性真空,因此在一些系統中,負載鎖定腔室可作為介在處於周遭環境壓力下之等候系統(queuing system)與真空反應腔室之間的傳送界面,用以在大氣與真空之間交換基板。同樣地,處理過的基板也可能會經由負載鎖定腔室被傳送出真空反應腔室而處於大氣環境中。In the process of flat panel displays and semiconductor devices, processes such as deposition, etching, and testing are conventionally performed in a vacuum chamber, and currently most of the substrates are transferred or transmitted through a load lock chamber. The vacuum reaction chamber is exited. The load lock chamber provides a staged vacuum between atmospheric pressure and vacuum reaction chamber pressure, so in some systems, the load lock chamber can act as a queuing system and vacuum reaction at ambient ambient pressure A transfer interface between the chambers for exchanging substrates between the atmosphere and the vacuum. Likewise, the treated substrate may also be transported out of the vacuum reaction chamber via the load lock chamber in an atmospheric environment.
為在製程中節省基板的搬運時間,搬運手臂會先將基板夾持至負載鎖定腔室之狹縫閥前等待其開啟,並於狹縫閥開啟後將基板置入負載鎖定腔室內。之後,再藉由位於真空腔室內的另一搬運手臂將基板從負載鎖定腔室傳送至真空反應腔室內,以對基板進行半導體製程處理。In order to save the substrate handling time during the process, the carrying arm first holds the substrate before the slit valve of the load lock chamber and waits for it to open, and places the substrate into the load lock chamber after the slit valve is opened. Thereafter, the substrate is transferred from the load lock chamber to the vacuum reaction chamber by another transfer arm located in the vacuum chamber to perform semiconductor processing on the substrate.
然而,由於負載鎖定腔室內外具有壓力差,因此在開啟狹縫閥時,殘留在這些機械元件上的油品往往容易因氣體流場改變而噴出,因而對基板造成污染,導致製程良率下降。However, since there is a pressure difference between the inside and outside of the load lock chamber, when the slit valve is opened, the oil remaining on these mechanical components tends to be easily ejected due to the change of the gas flow field, thereby causing contamination of the substrate, resulting in a decrease in process yield. .
有鑑於此,本發明提供一種半導體製程設備,以改善製程良率。In view of this, the present invention provides a semiconductor process equipment to improve process yield.
本發明提出一種半導體製程設備,用以對基板進行半導體製程處理,而此半導體製程設備包括第一腔室、門板、氣動活塞以及擋板。第一腔室具有狹縫閥,其中上述基板適於透過此狹縫閥自第一腔室外的預備置入區移至第一腔室內。而且,預備置入區是對應至狹縫閥。門板可相對第一腔室移動,以關閉或開啟第一腔室的狹縫閥。其中,當門板關閉狹縫閥時,第一腔室為密閉狀態;當門板開啟狹縫閥時,第一腔室是透過狹縫閥連通至外界。氣動活塞是配置於門板上,擋板是連接於門板而位於氣動活塞與預備置入區之間。The present invention provides a semiconductor processing apparatus for semiconductor processing of a substrate, the semiconductor processing apparatus including a first chamber, a door panel, a pneumatic piston, and a baffle. The first chamber has a slit valve, wherein the substrate is adapted to move through the slit valve from a preliminary placement area outside the first chamber to the first chamber. Moreover, the preliminary placement zone corresponds to the slit valve. The door panel is movable relative to the first chamber to close or open the slit valve of the first chamber. Wherein, when the door panel closes the slit valve, the first chamber is in a sealed state; when the door panel opens the slit valve, the first chamber is communicated to the outside through the slit valve. The pneumatic piston is disposed on the door panel, and the baffle is connected to the door panel and located between the pneumatic piston and the preliminary placement area.
在本發明的一實施例中,上述之擋板是蓋設於上述之門板上,且擋板包括蓋片、頂壁、底壁以及兩個側壁。其中,頂壁與底壁彼此相對,這些側壁彼此相對,且頂壁、底壁及這些側壁是連接至蓋片,而蓋片與上述之氣動活塞相對。In an embodiment of the invention, the baffle plate is disposed on the door panel, and the baffle includes a cover sheet, a top wall, a bottom wall, and two side walls. Wherein the top wall and the bottom wall are opposite to each other, the side walls are opposite to each other, and the top wall, the bottom wall and the side walls are connected to the cover sheet, and the cover sheet is opposite to the pneumatic piston described above.
在本發明的一實施例中,上述之底壁具有至少一個排氣孔,且此排氣孔是對應於上述氣動活塞的下方。In an embodiment of the invention, the bottom wall has at least one venting opening, and the venting opening corresponds to a lower portion of the pneumatic piston.
在本發明的一實施例中,上述半導體製程設備更包括濾氣裝置,適於提供自上述之頂壁上方朝向底壁流動的氣流。In an embodiment of the invention, the semiconductor processing apparatus further includes a gas filtering device adapted to provide an air flow flowing from above the top wall toward the bottom wall.
在本發明的一實施例中,上述半導體製程設備更包括至少一個扣件,固定於上述之擋板,用以將擋板扣合於門板上。In an embodiment of the invention, the semiconductor processing apparatus further includes at least one fastener fixed to the baffle for fastening the baffle to the door panel.
在本發明的一實施例中,上述底壁在相對頂壁的表面上具有溝槽,且此溝槽的兩端分別鄰近上述兩個側壁。In an embodiment of the invention, the bottom wall has a groove on a surface of the opposite top wall, and both ends of the groove are adjacent to the two side walls.
在本發明的一實施例中,上述門板包括至少一個氣孔,且上述氣動活塞是卡合於此氣孔內。In an embodiment of the invention, the door panel includes at least one air hole, and the pneumatic piston is engaged in the air hole.
在本發明的一實施例中,上述擋板的材質包括鋁金屬。In an embodiment of the invention, the material of the baffle comprises aluminum metal.
在本發明的一實施例中,上述第一腔室內的氣壓小於第一腔室外的氣壓。In an embodiment of the invention, the air pressure in the first chamber is smaller than the air pressure outside the first chamber.
在本發明的一實施例中,上述半導體製程設備更包括至少一個反應腔室與第一搬運手臂,其中第一搬運手臂用以將上述基板自第一腔室經由閥門搬運至反應腔室內。In an embodiment of the invention, the semiconductor processing apparatus further includes at least one reaction chamber and a first carrying arm, wherein the first carrying arm is configured to transport the substrate from the first chamber to the reaction chamber via the valve.
在本發明的一實施例中,上述反應腔室內的氣壓小於第一腔室內的氣壓。In an embodiment of the invention, the air pressure in the reaction chamber is smaller than the air pressure in the first chamber.
在本發明的一實施例中,上述半導體製程設備更包括傳送腔室,配置於上述反應腔室與第一腔室之間,且上述之第一搬運手臂位於傳送腔室內。In an embodiment of the invention, the semiconductor processing apparatus further includes a transfer chamber disposed between the reaction chamber and the first chamber, and the first transfer arm is located in the transfer chamber.
在本發明的一實施例中,上述之半導體製程設備更包括第二搬運手臂,適於將上述基板移動至預備置入區,並於門板開啟狹縫閥後將基板傳送至第一腔室內。In an embodiment of the invention, the semiconductor processing apparatus further includes a second carrying arm adapted to move the substrate to the preliminary placement area and transfer the substrate to the first chamber after the door panel opens the slit valve.
本發明之半導體製程設備係在第一腔室之門板與預備置入第一腔室的基板之間配置擋板,以遮擋門板在開啟時因氣體流場之變化所噴出的殘油,避免殘油噴至基板上而污染基板。由此可知,本發明之半導體製程設備可有效地保持基板在製程中的潔淨度,進而提高製程良率。The semiconductor process equipment of the present invention is configured to arrange a baffle between the door panel of the first chamber and the substrate pre-placed in the first chamber to block the residual oil sprayed by the gas flow field when the door panel is opened, and avoid the residual The oil is sprayed onto the substrate to contaminate the substrate. It can be seen that the semiconductor process equipment of the present invention can effectively maintain the cleanliness of the substrate in the process, thereby improving the process yield.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
為更進一步闡述本發明為達成預定發明目的所採取之技術手段及功效,以下結合附圖及較佳實施例,對依據本發明提出之半導體製程設備的具體實施方式、結構、特徵及其功效,詳細說明如後。To further illustrate the technical means and effects of the present invention in order to achieve the intended purpose of the invention, the specific embodiments, structures, features and functions of the semiconductor process equipment according to the present invention will be described below with reference to the accompanying drawings and preferred embodiments. The detailed description is as follows.
圖1為本發明之一實施例中半導體製程設備的示意圖,圖2為圖1之半導體製程設備的局部立體示意圖。請同時參照圖1及圖2,半導體製程設備100是用以對基板101進行半導體製程處理。舉例來說,半導體製程設備100例如可用以對基板101進行沈積或蝕刻等製程,而基板101可以是顯示裝置所使用之玻璃基板,也可以是用以製作半導體裝置的晶圓。1 is a schematic view of a semiconductor process device according to an embodiment of the present invention, and FIG. 2 is a partial perspective view of the semiconductor process device of FIG. 1. Referring to FIG. 1 and FIG. 2 simultaneously, the semiconductor processing apparatus 100 is configured to perform semiconductor processing on the substrate 101. For example, the semiconductor processing device 100 can be used, for example, to deposit or etch the substrate 101. The substrate 101 can be a glass substrate used in a display device, or a wafer used to fabricate a semiconductor device.
半導體製程設備100包括第一腔室110、門板120、氣動活塞130以及擋板140。第一腔室110具有狹縫閥112,基板101即是透過狹縫閥112從第一腔室110外的預備置入區104移至第一腔室110內。詳細來說,預備置入區104是位於第一腔室110外,並對應至狹縫閥112。在將基板101置入第一腔室110內之前,會先令基板101位於預備置入區104,等待狹縫閥112開啟後再將基板101放入第一腔室110內。在本實施例中,半導體製程設備100例如是使用搬運手臂150來夾持基板101,使其位於預備置入區104以等待狹縫閥112開啟。The semiconductor process apparatus 100 includes a first chamber 110, a door panel 120, a pneumatic piston 130, and a baffle 140. The first chamber 110 has a slit valve 112 that is moved through the slit valve 112 from the preliminary placement region 104 outside the first chamber 110 into the first chamber 110. In detail, the preliminary placement area 104 is located outside of the first chamber 110 and corresponds to the slit valve 112. Before the substrate 101 is placed in the first chamber 110, the substrate 101 is first placed in the preliminary placement area 104, and the substrate 101 is placed in the first chamber 110 after the slit valve 112 is opened. In the present embodiment, the semiconductor processing apparatus 100, for example, uses the carrying arm 150 to hold the substrate 101 in the preliminary placement area 104 to wait for the slit valve 112 to open.
進一步而言,本實施例之第一腔室110可做為真空處理機台中的負載鎖定腔室(load lock chamber),而半導體製程設備100還可以包括有至少一個反應腔室160及搬運手臂170,其中反應腔室160內的氣壓例如是小於第一腔室110內的氣壓。舉例來說,反應腔室160內例如是呈真空狀態。反應腔室160的數量係視基板101所需進行之製程種類的多寡而定,本發明並不在此限定反應腔室160的數量,圖1所繪示之數量僅作為說明用。Further, the first chamber 110 of the embodiment can be used as a load lock chamber in the vacuum processing machine, and the semiconductor processing apparatus 100 can further include at least one reaction chamber 160 and the carrying arm 170. Wherein the gas pressure within the reaction chamber 160 is, for example, less than the gas pressure within the first chamber 110. For example, the reaction chamber 160 is, for example, in a vacuum state. The number of reaction chambers 160 depends on the type of process that substrate 101 is required to perform, and the present invention does not limit the number of reaction chambers 160 herein. The number depicted in Figure 1 is for illustrative purposes only.
承上述,基板101在經由狹縫閥112放入第一腔室110之後,接著例如是藉由搬運手臂170將其自第一腔室110取出,再置入於反應腔室160內,以於反應腔室160內進行半導體製程。在本實施例中,搬運手臂170例如是配置於傳送腔室180內,且傳送腔室180是位於第一腔室110及反應腔室160之間,並與第一腔室110及反應腔室160之間分別以閥門190及閥門195相隔。In the above, after the substrate 101 is placed in the first chamber 110 via the slit valve 112, it is taken out from the first chamber 110 by, for example, the carrying arm 170, and then placed in the reaction chamber 160. A semiconductor process is performed in the reaction chamber 160. In the present embodiment, the carrying arm 170 is disposed, for example, in the transfer chamber 180, and the transfer chamber 180 is located between the first chamber 110 and the reaction chamber 160, and is coupled to the first chamber 110 and the reaction chamber. The valve 190 and the valve 195 are separated by 160 respectively.
請再次參照圖1及圖2,門板120可相對第一腔室110移動,以關閉或開啟狹縫閥112。在本實施例中,當狹縫閥112處於關閉狀態時,門板120例如是配置於第一腔體110之凹槽114內,並且緊密貼合於狹縫閥112,以使第一腔室110呈密封狀態。在欲開啟狹縫閥112時,則可致動門板120先沿X軸移動至凹槽114外,然後再致動門板120沿Z軸往下移動,以開啟狹縫閥112。此時第一腔室110即可透過狹縫閥112連通至外界,以便於搬運手臂150將基板101經由狹縫閥112送入第一腔室110內。Referring again to FIGS. 1 and 2, the door panel 120 is movable relative to the first chamber 110 to close or open the slit valve 112. In the present embodiment, when the slit valve 112 is in the closed state, the door panel 120 is disposed, for example, in the recess 114 of the first cavity 110 and closely fits the slit valve 112 to make the first chamber 110 Sealed. When the slit valve 112 is to be opened, the door panel 120 can be actuated to move outwardly along the X-axis to the outside of the recess 114, and then the door panel 120 is actuated to move down the Z-axis to open the slit valve 112. At this time, the first chamber 110 can communicate with the outside through the slit valve 112, so that the carrying arm 150 feeds the substrate 101 into the first chamber 110 via the slit valve 112.
在部分的半導體製程中,在關閉狹縫閥112之後必須將第一腔室110內的氣體抽離,使得第一腔室110內接近真空狀態。為此,本實施例之門板120上例如是配置有至少一個氣動活塞130,以於抽氣過程中藉由第一腔室110內外的壓力差推動氣動活塞130,進而更有效地密封第一腔室110。具體來說,氣動活塞130的材質例如是橡膠或其他軟性材質,且其例如是卡合於門板120的氣孔122內。雖然本實施例所繪示之氣動活塞130的數量為三個,但本發明不以此為限。In a portion of the semiconductor process, the gas within the first chamber 110 must be evacuated after the slit valve 112 is closed, such that the first chamber 110 is near a vacuum. To this end, the door panel 120 of the present embodiment is provided with, for example, at least one pneumatic piston 130 to push the pneumatic piston 130 by the pressure difference between the inside and the outside of the first chamber 110 during the pumping process, thereby sealing the first cavity more effectively. Room 110. Specifically, the material of the pneumatic piston 130 is, for example, rubber or other soft material, and is, for example, engaged in the air hole 122 of the door panel 120. Although the number of the pneumatic pistons 130 illustrated in this embodiment is three, the present invention is not limited thereto.
圖3繪示為圖1之門板120與擋板140的分解示意圖。請參照圖1至圖3,擋板140的材質可以是鋁,且其是連接至門板120而位於氣動活塞130與預備置入區104之間。在本實施例中,擋板140例如是藉由扣件310而固定於門板120上。詳細來說,扣件310的一端是鎖固於擋板140上,另一端則是扣合於門板120上。因此,當門板120沿X軸移動至凹槽114外時,可藉由擋板140遮擋門板120上因氣體流場變動而從氣孔122所噴出的殘油,以避免對基板101造成污染。3 is an exploded perspective view of the door panel 120 and the baffle 140 of FIG. 1. Referring to FIGS. 1 through 3 , the baffle 140 may be made of aluminum and connected to the door panel 120 between the pneumatic piston 130 and the preliminary placement area 104 . In the present embodiment, the baffle 140 is fixed to the door panel 120 by, for example, the fastener 310. In detail, one end of the fastener 310 is locked to the baffle 140, and the other end is fastened to the door panel 120. Therefore, when the door panel 120 moves along the X axis to the outside of the recess 114, the residual oil sprayed from the air hole 122 due to the gas flow field fluctuation on the door panel 120 can be blocked by the baffle 140 to avoid contamination of the substrate 101.
以下將舉實施例配合圖式詳細說明擋板140的結構。The structure of the baffle 140 will be described in detail below with reference to the drawings.
圖4為本發明之一實施例中擋板的立體示意圖,圖5為圖4之擋板沿I-I’線的剖面示意圖。請參照圖4及圖5,本實施例之擋板140例如是包括蓋片142、頂壁144、底壁146、側壁148以及側壁149,其中頂壁144與底壁146彼此相對,側壁148與側壁149彼此相對,且頂壁144、底壁146、側壁148以及側壁149均連接至蓋片142而構成蓋狀的擋板140。如圖2及圖3所示,本實施例之擋板140是蓋設於門板120上,其中蓋片142與氣動活塞130彼此相對,並與門板120之間相隔間距D,而頂壁144、底壁146、側壁148以及側壁149則是連接至門板120。特別的是,擋板140的底壁146在面對頂壁144的表面146a上可選擇性地設置溝槽147,其中溝槽147的兩端分別鄰近側壁148以及側壁149,用以盛裝圖3之門板120從氣孔122噴出的殘油。4 is a perspective view of a baffle according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of the baffle of FIG. 4 taken along line I-I'. Referring to FIG. 4 and FIG. 5, the baffle 140 of the present embodiment includes, for example, a cover sheet 142, a top wall 144, a bottom wall 146, a side wall 148, and a side wall 149, wherein the top wall 144 and the bottom wall 146 are opposite to each other, and the side wall 148 is The side walls 149 are opposed to each other, and the top wall 144, the bottom wall 146, the side walls 148, and the side walls 149 are both connected to the cover sheet 142 to constitute a cover-like baffle 140. As shown in FIG. 2 and FIG. 3, the baffle 140 of the present embodiment is disposed on the door panel 120, wherein the cover sheet 142 and the pneumatic piston 130 are opposite to each other and spaced apart from the door panel 120 by a distance D, and the top wall 144, The bottom wall 146, the side walls 148, and the side walls 149 are connected to the door panel 120. In particular, the bottom wall 146 of the baffle 140 is selectively disposed with a groove 147 on the surface 146a facing the top wall 144, wherein the two ends of the groove 147 are adjacent to the side wall 148 and the side wall 149, respectively, for housing FIG. The residual oil ejected from the air holes 122 by the door panel 120.
此外,擋板140之底壁146還可以具有至少一個排氣孔145,對應於氣動活塞130下方,用以排出擋板140與門板120之間的油氣。值得一提的是,本發明在另一實施例中,半導體製程設備100還可以包括濾氣裝置210,如圖6所示,其是用以提供氣流G,且氣流G是由擋板140之頂壁144的上方朝向底壁146流動而將自排氣孔145排出的油氣帶離。In addition, the bottom wall 146 of the baffle 140 may also have at least one venting opening 145 corresponding to the underside of the pneumatic piston 130 for discharging oil and gas between the baffle 140 and the door panel 120. It should be noted that, in another embodiment, the semiconductor process device 100 may further include a gas filtering device 210, as shown in FIG. 6, for providing the airflow G, and the airflow G is by the baffle 140. The upper portion of the top wall 144 flows toward the bottom wall 146 to carry away the oil and gas discharged from the exhaust hole 145.
綜上所述,本發明之半導體製程設備係在第一腔室之門板與預備置入第一腔室的基板之間配置擋板,以遮擋門板在開啟時因氣體流場之變化所噴出的殘油,避免殘油噴至基板上而污染基板。此外,擋板還可以避免氣動活塞因不慎自門板上脫落時砸傷基板。由此可知,本發明之半導體製程設備可有效地保持基板在製程中的潔淨度,進而提高製程良率。In summary, the semiconductor process equipment of the present invention configures a baffle between the door panel of the first chamber and the substrate pre-placed in the first chamber to block the door panel from being ejected due to changes in the gas flow field when the door panel is opened. Residual oil, avoiding residual oil sprayed onto the substrate to contaminate the substrate. In addition, the baffle can also prevent the pneumatic piston from damaging the substrate when it is accidentally detached from the door panel. It can be seen that the semiconductor process equipment of the present invention can effectively maintain the cleanliness of the substrate in the process, thereby improving the process yield.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
100...半導體製程設備100. . . Semiconductor process equipment
101...基板101. . . Substrate
104...預備置入區104. . . Prepared placement area
110...第一腔室110. . . First chamber
112...狹縫閥112. . . Slit valve
114...凹槽114. . . Groove
120...門板120. . . Door panel
122...氣孔122. . . Stomata
130...氣動活塞130. . . Pneumatic piston
140...擋板140. . . Baffle
142...蓋片142. . . Cover piece
144...頂壁144. . . Top wall
145...排氣孔145. . . Vent
146...底壁146. . . Bottom wall
146a...表面146a. . . surface
147...溝槽147. . . Trench
148、149...側壁148, 149. . . Side wall
150、170...搬運手臂150, 170. . . Carrying arm
160...反應腔室160. . . Reaction chamber
180...傳送腔室180. . . Transfer chamber
190、195...閥門190, 195. . . valve
210...濾氣裝置210. . . Gas filter unit
310...扣件310. . . Fastener
D...間距D. . . spacing
G...氣流G. . . airflow
圖1為本發明之一實施例中半導體製程設備的示意圖。1 is a schematic diagram of a semiconductor process apparatus in accordance with an embodiment of the present invention.
圖2為圖1之半導體製程設備的局部立體示意圖。2 is a partial perspective view of the semiconductor process equipment of FIG. 1.
圖3繪示為圖1之門板與擋板的分解示意圖。3 is an exploded perspective view of the door panel and the baffle of FIG. 1.
圖4為本發明之一實施例中擋板的立體示意圖。4 is a perspective view of a baffle in accordance with an embodiment of the present invention.
圖5為圖4之擋板沿I-I’線的剖面示意圖。Figure 5 is a cross-sectional view of the baffle of Figure 4 taken along line I-I'.
圖6為本發明之一實施例中半導體製程設備的側面示意圖。Figure 6 is a side elevational view of a semiconductor process device in accordance with one embodiment of the present invention.
101...基板101. . . Substrate
104...預備置入區104. . . Prepared placement area
110...第一腔室110. . . First chamber
112...狹縫閥112. . . Slit valve
114...凹槽114. . . Groove
120...門板120. . . Door panel
130...氣動活塞130. . . Pneumatic piston
140...擋板140. . . Baffle
310...扣件310. . . Fastener
D...間距D. . . spacing
Claims (13)
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TW100148951A TWI524451B (en) | 2011-12-27 | 2011-12-27 | Semiconductor processing apparatus |
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