TWI523270B - Electrode - free light - emitting diode and its manufacturing method - Google Patents

Description

Light-emitting diode without electrode shading and manufacturing method thereof

The invention relates to a light-emitting diode, and a manufacturing method thereof, in particular to a light-emitting diode without electrode shading and a manufacturing method thereof.

The photoelectric efficiency of the light-emitting diode is represented by external quantum efficiency, and the external quantum efficiency is the product of the internal quantum efficiency and the light extraction rate; wherein the light extraction rate is the photon generated by the self-luminous layer and successfully leaves the inside of the semiconductor photovoltaic element. The ratio of the amount of photons.

Referring to FIG. 1, FIG. 1 is a general LED structure having an epitaxial substrate 11, an illumination unit 12 formed on the surface of the epitaxial substrate 11, and an electrode unit for supplying electric energy to the illumination unit 12. 13. The light emitting layer has a first type semiconductor layer 121 connected to the surface of the substrate, a multi-junction quantum well layer (MQW) 122 connected to a part of the surface of the first type semiconductor layer 121, and a layer The surface of the second type semiconductor layer 123 is a light-emitting surface, and the electrode unit 13 has a bottom electrode 131 formed on a surface of the first-type semiconductor layer 121. And a top electrode 132 formed on a surface of the second type semiconductor layer 123.

Currently used to improve the light extraction rate of light-emitting diodes, There is a chemical method of changing the structure/composition of the light-emitting unit to improve the luminous efficiency, or a physical method to form a rough or irregular shape of the roughened structure 14 on the surface of the light-emitting unit 12 or the surface of the epitaxial substrate 11 (see 2, in FIG. 2, the roughened structure 14 is formed on the light-emitting surface) to reduce the total reflection of light, or to reduce the coverage of the light-emitting surface by the top electrode 132, thereby increasing the light-emitting area to enhance the light emission. If the epitaxial substrate 11 is a light-transmitting material, if the epitaxial substrate 11 is a light-transmitting material, the LED can be further packaged by using a flip-chip method to change the direction of light emission to reduce the general package, because the top is The problem of shading of the electrode caused by the covering of the electrode 132.

However, when the LED package is performed in a flip chip package, the light is emitted through the direction of the epitaxial substrate 11 to avoid the problem that the top electrode 132 covers the light surface during the conventional package, but the flip chip package is used. Because the bottom and top electrodes 131, 132 are aligned with the circuit for the packaged substrate, the process is difficult because the bottom and top electrodes 131, 132 are pressed at the bottom. . In addition, the package substrate generally used for flip chip packaging is formed on the same plane because the circuits of the positive and negative electrodes are formed. Therefore, the flip chip structure obtained after packaging still faces the insulating material of the package substrate, which affects the heat dissipation capability. problem.

Therefore, how to reduce the influence of the top electrode 13 on the light-emitting unit 12 and reduce the waste of the light-emitting area of the light-emitting layer 12 to effectively improve the light-emitting efficiency of the light-emitting diode is an improvement of the direction of the technician.

Accordingly, it is an object of the present invention to provide an electrodeless shield A method for fabricating a light-emitting diode, which not only produces a light-emitting diode having a high light extraction rate without electrode shading, and the light-emitting diode can also solve the limitation of the conventional flip chip process alignment.

Therefore, the method for producing the light-emitting diode without electrode shading of the present invention comprises the following six steps.

Step (a), preparing a substrate having an epitaxial substrate for epitaxy and a light emitting unit, the light emitting unit having a first type semiconductor layer connected to a surface of the epitaxial substrate, and A multi-junction quantum well layer connected to a portion of the surface of the first type semiconductor layer and a second type semiconductor layer connected to the surface of the multi-junction quantum well layer.

In step (b), at least one first electrode spaced apart from the multi-junction quantum well layer and the second-type semiconductor layer is formed on the surface of the first-type semiconductor layer.

In the step (c), a second insulating film covering the exposed surface of the first electrode is formed.

In step (d), a second electrode electrically connected to the top surface of the light emitting unit is formed.

In step (e), the epitaxial substrate is removed to expose a surface of the first type semiconductor layer and the epitaxial substrate.

Step (f), forming a first through hole penetrating the first type semiconductor layer from a surface of the first type semiconductor layer away from the light emitting unit toward a position corresponding to the first electrode, and forming a first electrical connection with the first electrode And a first extension electrode extending outward through the first perforation.

Preferably, wherein step (b) is forming a plurality of The junction quantum well layer, and the second type semiconductor layer form a first electrode spaced apart from each other, and the step (c) is to form an insulating layer on the gaps and the top surface of the first electrode.

Preferably, the light emitting unit further has a reflective layer formed on a surface of the second type semiconductor layer.

Preferably, the method for fabricating the high light extraction rate light emitting diode further comprises a step (g) performed before the step (c), wherein the multi-junction quantum well layer and the second type semiconductor layer are away from the Forming a first insulating film on a side surface of the first electrode, and forming a connecting wire along a surface of the first insulating film from the top surface of the light emitting unit, the step (f) is from the back surface toward the first electrode and the Positioning the connecting wires respectively to form a first and second through holes penetrating the first type semiconductor layer, and respectively forming a first connection with the first electrode and the connecting wire, and extending first through the first and second through holes An extension electrode and a second extension electrode.

Preferably, in the step (e), the epitaxial substrate is removed by laser stripping, chemical etching or mechanical grinding.

Preferably, in the step (d), a seed layer is formed on the top surface of the insulating layer and the light-emitting unit, and a metal layer is formed by thickening from the surface of the seed layer by electroplating. Second electrode.

Preferably, in the step (d), a seed layer is formed on the top surface of the insulating layer and the light-emitting unit, and a conductive substrate is bonded to the surface of the seed layer by wafer bonding. Obtaining the second electrode

Further, another object of the present invention is to provide a light-emitting diode which is provided without electrode shading.

Therefore, the light emitting diode of the present invention comprises: a light emitting unit, a first electrode, an insulating layer, an extending electrode, and a second electrode.

The light emitting unit has a first type semiconductor layer, a multi-junction quantum well layer formed on a portion of the surface of the first type semiconductor layer, and a second type semiconductor layer formed on the surface of the multi-junction quantum well layer. And the first type semiconductor layer has at least one perforation.

The first electrode is disposed on the surface of the first type semiconductor layer, and is spaced apart from the multi-junction quantum well layer and the second type semiconductor layer with a gap therebetween, and covers the through-hole position.

The insulating layer covers the top surface of the light emitting unit and the first electrode.

The extension electrode is electrically connected to the first electrode through the through hole.

The second electrode is electrically connected to a top surface of the light emitting unit.

Preferably, the light emitting unit further has a reflective layer formed on a surface of the second type semiconductor layer.

Further, another object of the present invention is to provide a light-emitting diode which is provided without electrode shading.

Therefore, the light emitting diode of the present invention comprises: a light emitting unit, a first electrode, an insulating layer, a connecting wire, an extending electrode unit, and a second electrode.

The light emitting unit has a first type semiconductor layer, a multi-layer quantum well layer, and a second type semiconductor layer, wherein the first type semiconductor layer has a dividing groove, and one separated from each other by the dividing groove a first zone and a second zone, the first zone having a first perforation and the second zone And having a second via hole adjacent to the dividing trench, the multi-junction quantum well layer is formed on a surface of the first region adjacent to the dividing trench, and the second type semiconductor layer is formed on a surface of the multi-junction quantum well layer.

The first electrode is disposed on the surface of the first region, and is spaced apart from the multi-junction quantum well layer and the second-type semiconductor layer by a gap, and covers the first perforation position of the first region.

The insulating layer has a first insulating film covering the multi-junction quantum well layer, a second type semiconductor layer adjacent to a side surface of the dividing trench, and a second insulating film covering a surface of the first electrode.

The connecting wire extends from a top surface of the second type semiconductor layer and along a surface of the first insulating film to the second region, and covers a second through position of the second region.

The extension electrode unit has a first extension electrode electrically connected to the first electrode through the first through hole, and a second extension electrode electrically connected to the connection line through the second through hole.

The second electrode is formed on a top surface of the light emitting unit and is electrically connected to the light emitting unit and the connecting wire.

The effect of the present invention is that the first electrode is formed outside the light-emitting surface of the light-emitting unit, and an extended electrode formed on the exposed surface of the first-type semiconductor layer and electrically connected to the first electrode is prepared in advance. It can not only solve the problem of conventional LED structure electrode shading, but also solve the electrode alignment problem in flip chip packaging.

100‧‧‧ epitaxial substrate

21‧‧‧Lighting unit

211‧‧‧First type semiconductor layer

212‧‧‧Multiple junction quantum well layers

213‧‧‧Second type semiconductor layer

214‧‧‧reflective layer

215‧‧‧Perforation

22‧‧‧First electrode

23‧‧‧Insulation

24‧‧‧Extended electrode

25‧‧‧second electrode

31‧‧‧Steps

32‧‧‧Steps

33‧‧‧Steps

34‧‧‧Steps

35‧‧‧Steps

36‧‧‧Steps

41‧‧‧Lighting unit

411‧‧‧First type semiconductor layer

411a‧‧‧First District

411b‧‧‧Second District

412‧‧‧Multiple junction quantum well layers

413‧‧‧Second type semiconductor layer

414‧‧‧reflective layer

415‧‧‧ split slot

416‧‧‧First perforation

417‧‧‧Second perforation

42‧‧‧First electrode

43‧‧‧Insulation

431‧‧‧First insulating film

432‧‧‧Second insulation film

44‧‧‧Connecting wires

45‧‧‧Extended electrode unit

451‧‧‧First extended electrode

452‧‧‧Second extension electrode

46‧‧‧second electrode

51‧‧‧Steps

52‧‧‧Steps

53‧‧‧Steps

54‧‧‧Steps

55‧‧‧Steps

56‧‧‧Steps

Other features and effects of the present invention will be described with reference to the drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the detailed description, FIG. 1 is a schematic view showing a conventional light-emitting diode; FIG. 2 is a schematic view showing another aspect of a conventional light-emitting diode; FIG. 1 is a flow chart illustrating a first preferred embodiment of the present invention; FIG. 4 is a flow chart illustrating a method of fabricating the first preferred embodiment of the present invention; FIG. Figure 6 is a top plan view showing another distribution of the first electrode of the first preferred embodiment; Figure 7 is a schematic view showing a second preferred embodiment of the light-emitting diode of the present invention; A flow chart illustrating a method of fabricating the second preferred embodiment of the present invention; and FIG. 9 is a schematic flow diagram of FIG.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 3, FIG. 3 is a first preferred embodiment of a light-emitting diode according to the present invention, which is a horizontal light-emitting diode structure.

The light emitting diode comprises: a light emitting unit 21, a first electrode 22, an insulating layer 23, an extended electrode 24, and a second electrode 25.

The light emitting unit 21 has a first type semiconductor layer 211, a multi-layer quantum well layer 212, a second type semiconductor layer 213, and a reverse Shot layer 214. The first type semiconductor layer 211 has a through hole 215 spaced apart from the multi-junction quantum well layer 212 and the second type semiconductor layer 213. The first and second type semiconductor layers 211, 213 refers to a semiconductor film layer having opposite electrical conductivity via different ion doping. For example, when the first type semiconductor layer 211 is n-type doped, the second type semiconductor layer 213 is p-type doped; The first type semiconductor layer 211 is p-type doped, and the second type semiconductor layer 213 is n-type doped. Since the related materials of the light-emitting unit are known in the art, and are not the focus of the present invention, no more is added. In the present embodiment, the first and second semiconductor layers 211 and 213 are respectively n-doped and p-doped gallium nitride as an example.

The first electrode 22 is disposed on the surface of the first type semiconductor layer 211, and is spaced apart from the multi-junction quantum well layer 212 and the second type semiconductor layer 213 by a gap, and covers the first through hole 215 .

The insulating layer 23 covers the top surface of the light emitting unit 21 and the first electrode 22; the purpose of the insulating layer 23 is to isolate unnecessary electrical contact between the first electrode 42 and other conductive materials, so Insulation materials can be applied, such as photoresist, epoxy resin and the like.

The extension electrode 24 is electrically connected to the first electrode 22 through the through hole 215.

The second electrode 25 is electrically connected to a top surface of the light emitting unit 21. The purpose of the first electrode 22, the extension electrode 24, and the second electrode 25 is to conduct electricity. Therefore, as long as it is an electrically conductive material, such as a metal, an alloy, or a metal oxide, there is no special limit. When using this When the first and second electrodes 22 and 25 supply electric energy to the light emitting unit 21, the light emitting unit 21 can convert the light into the light energy after receiving the electrical energy, and the surface of the first type semiconductor layer 211 is the same. The light-emitting surface of the light-emitting diode.

The present invention utilizes the first electrode 22 formed outside the light-emitting surface of the light-emitting unit 21 and does not cover the quantum well of the light-emitting region. Therefore, the problem that the conventional top electrode 132 covers the light-emitting surface can be solved, and the light-emitting surface can be effectively improved. The light-emitting efficiency of the polar body is formed by the via 215 formed in the first-type semiconductor layer 211, so that the first electrode 22 can be exposed to the first-type semiconductor layer 211 via the extension of the extension electrode 24, so When the flip-chip package is to be used for the flip chip package, the exposed extension electrode 24 can be used for wire bonding, thereby solving the problem that the conventional light-emitting diode is difficult to align the circuit during the flip chip package.

Referring to Figures 4 and 5, the manufacturing method of the first preferred embodiment of the light-emitting diode of the present invention comprises the following six steps.

Step 31, preparing a substrate having an epitaxial substrate 100 for epitaxy and a light emitting unit 21 having a first type semiconductor layer 211 connected to a surface of the epitaxial substrate 100, a multi-junction quantum well layer 212 connected to a portion of the surface of the first type semiconductor layer 211, a second type semiconductor layer 213 connected to the surface of the multi-junction quantum well layer 212, and a layer formed on the second type A reflective layer 214 on the surface of the semiconductor layer 213. It should be noted that the light emitting unit 21 may be formed by sequentially epitaxially forming the first type semiconductor layer 211, the multi-junction quantum well layer 212, the second type semiconductor layer 213, and the reflection before the surface of the epitaxial substrate 100. After the layer 214, an etch-removed portion is formed on the first half a plurality of junction quantum well layers 212, a second type semiconductor layer 213, and a reflective layer 214 on the conductor layer 211, such that a portion of the surface of the first type semiconductor layer 211 is exposed, that is, the light emitting unit 21 is obtained; or The first type semiconductor layer 211, the multi-junction quantum well layer 212, and the second type semiconductor layer 213 are sequentially epitaxially formed on the surface of the substrate 100, and then the etch-removed portion is formed on the first type semiconductor. a plurality of junction quantum well layers 212 on the layer 211, and a second type semiconductor layer 213, a portion of the surface of the first type semiconductor layer 211 is exposed, and the reflective layer 214 is formed on the surface of the second type semiconductor layer 213. The light-emitting unit 21 is obtained. Since the fabrication of the illumination unit 21 and the selection of related materials are well known in the art, no further details are provided.

In step 32, a first electrode 22 is formed on the surface of the first type semiconductor layer 211 to form a gap with the multi-junction quantum well layer 212, the second type semiconductor layer 213, and the reflective layer 214. It is to be noted that the purpose of the first electrode 22 is to be used for electrical conduction, and therefore it is selected from electrically conductive materials such as metals, alloys, or metal oxides, and is not particularly limited. Preferably, Considering the flatness and stability of the subsequent package, the height of the first electrode 22 is substantially equivalent to the level of the reflective layer 214.

Step 33, forming an insulating layer 23 on the surface of the first electrode 22 by coating, the purpose of the insulating layer 23 is to isolate the first electrode 22 from other conductive materials or the first type semiconductor layer The electrical contact between the 211 and the multi-junction quantum well layer 212 is not required, and therefore, as long as it is an insulating material, for the subsequent process requirements, preferably, the insulation Layer 23 covers the exposed surface of the first electrode 22 and fills the gap.

In step 34, a second electrode 25 electrically connected to the top surface of the light emitting unit 21 is formed. In detail, the step 34 may be that a layer of a seed layer is formed on the top surface of the light-emitting unit 21 and the insulating layer 23, and then a metal layer is formed on the seed layer by electroplating thickening. The second electrode 25; or a wafer bonding method, after forming a seed layer on the top surface of the light-emitting unit 21 and the insulating layer 23, and then bonding a conductive substrate to the conductive substrate The second electrode 25 is obtained on the seed layer.

In step 35, the epitaxial substrate 100 is removed. The step 35 can remove the epitaxial substrate 100 by laser lift off, chemical etching, or mechanical polishing, and connect the surface of the first type semiconductor layer 211 to the epitaxial substrate 100. Bare exposed.

Step 36, forming a through hole 215 penetrating the first type semiconductor layer from the surface of the first type semiconductor layer 211 away from the light emitting unit 21 toward the position corresponding to the first electrode 22 by etching, and forming a The light-emitting diode of the present invention can be obtained by electrically connecting the first electrode 22 and extending the electrode 24 extending outward through the through hole 215.

In addition, referring to FIG. 6 , FIG. 6 is a schematic view of a top surface of the light emitting diode. The light emitting diode may also have a plurality of first electrodes 22 , and the first electrodes 22 may surround the light emitting unit 21 . The quantum wells are disposed so as not to cover the light-emitting area. The first electrodes 22 can increase the external electrical connection points of the light-emitting diodes, thereby increasing the convenience of external electrical connection.

The first electrode 22 is formed on the light emitting unit 21 The first electrode 22 can be exposed to the first type semiconductor layer 211 via the extension electrode 24, and the second electrode 211 is formed on the first semiconductor layer 211. Knowing the problem of shading of the electrode, and when the flip-chip package is to be used for the flip-chip package, the exposed extension electrode 24 can be used for wire bonding, and the conventional light-emitting diode can be further solved in the case of flip-chip packaging. The problem.

Referring to FIG. 7, FIG. 7 is a second preferred embodiment of a light-emitting diode according to the present invention, which is a vertical light-emitting diode structure.

The light emitting diode comprises: a light emitting unit 41, a first electrode 42, an insulating layer 43, a connecting wire 44, an extending electrode unit 45, and a second electrode 46.

The light emitting unit 41 has a first type semiconductor layer 411, a multi-layer quantum well layer 412, a second type semiconductor layer 413, and a reflective layer 414. The first type semiconductor layer 411 has a dividing groove 415, and a first area 411a and a second area 411b separated from each other by the dividing groove 415; the first area 411a has a distance away from the dividing groove 415. a first via 416, and the second region 411b has a second via 417 adjacent to the dividing trench 415. The multi-junction quantum well layer 412 is formed on the surface of the first region 411a adjacent to the dividing trench 415, and the first region A two-type semiconductor layer 413 is formed on the surface of the multi-junction quantum well layer 412. The first and second semiconductor layers 411 and 413 are the same as the first preferred embodiment, and therefore will not be further described.

The first electrode 42 is disposed on the surface of the first region 411a, and has a gap with the multi-junction quantum well layer 412 and the second-type semiconductor layer 413. They are spaced apart from each other and cover the position of the first perforations 416 of the first zone 411a.

The insulating layer 43 has a first insulating film 431 covering the multi-junction quantum well layer 412, and a side surface of the second-type semiconductor layer 413 adjacent to the dividing trench 415, and a surface covering the first electrode 42. The second insulating film 432 is used to isolate the first electrode 42 from other conductive materials or between the connecting wires 44 and the first type semiconductor layer 411 and the multi-junction quantum well layer 412. Unnecessary electrical contact, therefore, as long as it is an insulating material, such as photoresist, epoxy resin, etc.

The connecting wire 44 extends from the top surface of the light emitting unit 41 along the surface of the first insulating film 431 to the second region 411b and covers the second through hole 417 of the second region 411b.

The extension electrode unit 45 has a first extension electrode 451 electrically connected to the first electrode 42 through the first through hole 416, and a second extension electrode electrically connected to the connection wire 44 through the second through hole 417. 452.

The second electrode 46 is formed on the top surface of the light emitting unit 41 and is electrically connected to the light emitting unit 41 and the connecting wire 44. When the first and second electrodes 42 and 46 are used to supply electric energy to the light emitting unit 41, the light emitting unit 41 can convert the light into a light energy after receiving the electrical energy, and the first semiconductor layer 411 is A zone 411a is the light exiting surface of the light emitting diode.

The first electrode 42 is formed outside the light-emitting surface of the light-emitting unit 41, and does not block the quantum well region of the light-emitting region. Therefore, the problem of the light-shielding of the top electrode of the conventional LED structure can be solved; The The first and second vias 416 and 417 of the first type semiconductor layer 411 are exposed to the first type semiconductor layer 411 via the extension of the first and second electrodes 451 and 452, respectively. Therefore, when the flip-chip package is performed by using the light-emitting diode of the present invention, the exposed first and second extension electrodes 451 and 452 can be used for wire bonding, thereby solving the circuit of the conventional light-emitting diode in flip chip packaging. The problem of difficulty in alignment.

Referring to Figures 8 and 9, the manufacturing method of the second preferred embodiment of the present invention will be described below.

The manufacturing method of the second preferred embodiment of the light-emitting diode of the present invention comprises the following six steps.

Step 51, preparing a substrate having an epitaxial substrate 100 for epitaxy and a light emitting unit 41 having a first type semiconductor layer 411 connected to a surface of the epitaxial substrate 100, a multi-junction quantum well layer 412 connected to a portion of the surface of the first type semiconductor layer 411, a second type semiconductor layer 413 connected to the surface of the multi-junction quantum well layer 412, and a layer formed on the second type A reflective layer 414 on the surface of the semiconductor layer 413. Since the manufacturing method of the light emitting unit 41 is the same as that of the first preferred embodiment, no further details are provided.

Step 52, depositing a first electrode 42 on the surface of the first type semiconductor layer 411 to form a gap with the multi-junction quantum well layer 412, the second type semiconductor layer 413, and the reflective layer 414. It should be noted that the first electrode 42 is used for electrical conduction, and thus is selected from a conductive material such as a metal, an alloy, or a metal oxide, and is not particularly limited; preferably, in order to consider the subsequent package Leveling and stability, the first The height of one of the electrodes 42 is substantially equivalent to the level of the reflective layer 414.

Step 53: forming a first insulating film 431 on the multi-junction quantum well layer 412, the second-type semiconductor layer 413, and the side surface of the 414-reflecting layer away from the first electrode 42 by coating, and in the first A second insulating film 432 is formed on the surface of the electrode 42. It is to be noted that the first and second insulating films 431 and 432 are used for isolating the first electrode 42 from other conductive materials, or the connecting wires 44 and the first type semiconductor layer 411 and the multi-junction quantum. The electrical contact between the well layers 412 is not required. Therefore, as long as it is an insulating material, the second insulating film 432 preferably covers the exposed surface of the first electrode 42 for the subsequent process. The gap is filled, and the heights of the first and second insulating films 431, 432 are substantially at the same horizontal position.

In step 54, a second electrode 46 electrically connected to the top surface of the light emitting unit 41 is formed. Specifically, in the step 54, a seed layer is formed on the top surface of the light-emitting unit 41 and the first and second insulating films 431 and 432, and then a layer is formed on the seed layer by electroplating thickening. The metal layer is used to obtain the second electrode 46; or a wafer bonding method may be used to form a seed layer on the top surface of the light-emitting unit 41 and the insulating layer 43 and then The conductive substrate is bonded to the seed layer to obtain the second electrode 46. Since the plating or wafer bonding method is a technical means commonly used in the technical field, it will not be further explained.

In step 55, the epitaxial substrate 100 is removed. The step 55 can remove the epitaxial substrate 100 by laser lift off, chemical etching, or mechanical polishing, and the first type semiconductor layer is removed. The surface of the 411 connected to the epitaxial substrate 100 is exposed.

Then, in step 56, a dividing groove 415 is formed in an etching manner from a surface of the first type semiconductor layer 411 away from the surface of the light emitting unit 41 toward the first insulating film 431, and corresponds to the first electrode 42 and the connection. The positions of the wires 44 respectively form a first and second through holes 416 and 417 penetrating the first type semiconductor layer, and are electrically connected to the first electrode 42 and the connecting wire 44 by using a deposition method, respectively, and through the first and second The light-emitting diode of the present invention can be obtained by a first extension electrode 451 and a second extension electrode 452 extending outwardly from the through holes 416 and 417.

In addition, it should be noted that the light emitting diode may also have a plurality of first electrodes 42 which are quantum wells disposed around the light emitting unit 21 and do not block the light emitting region. An electrode 42 can increase the external electrical connection point of the LED, and is easier for subsequent wire bonding to increase the convenience of external electrical connection.

In summary, the present invention utilizes the first electrodes 22 and 42 to be formed outside the light-emitting surface of the light-emitting unit 21, and previously forms an extended electrode 24 formed on the exposed surface of the first-type semiconductor layers 211 and 411. 45, the light-emitting diode of the electrodeless light-shielding is obtained, so that the problem that the conventional LED top electrode 132 covers the light-emitting surface can be solved, and the light-emitting efficiency of the light-emitting diode can be effectively improved; When the electrodeless light-shielding light-emitting diode of the present invention is subjected to flip-chip packaging, the exposed extension electrodes 24 and 45 can be used for wire bonding, thereby solving the problem that the conventional light-emitting diode is difficult to align in the flip chip package. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto. The simple equivalent changes and modifications made by the scope of the invention and the content of the patent specification are still within the scope of the invention.

21‧‧‧Lighting unit

211‧‧‧First type semiconductor layer

212‧‧‧Multiple junction quantum well layers

213‧‧‧Second type semiconductor layer

214‧‧‧reflective layer

215‧‧‧Perforation

22‧‧‧First electrode

23‧‧‧Insulation

24‧‧‧Extended electrode

25‧‧‧second electrode

Claims (11)

A method for fabricating a light-emitting diode without electrode shading, comprising: step (a), preparing a substrate having an epitaxial substrate for epitaxy and a light-emitting unit, the light-emitting unit having a layer and the light-emitting unit a first type semiconductor layer connected to a surface of the crystal substrate, a multi-junction quantum well layer connected to a surface of the first type semiconductor layer, and a second type semiconductor layer connected to the surface of the multi-junction quantum well layer Step (b), forming at least one first electrode spaced apart from the multi-junction quantum well layer and the second-type semiconductor layer at a gap from the surface of the first-type semiconductor layer; and (c) forming a layer of a package a second insulating film covering the exposed surface of the first electrode; a step (d), forming a second electrode electrically connected to the top surface of the light emitting unit; and (e) removing the epitaxial substrate a surface of the first type semiconductor layer connected to the epitaxial substrate is exposed; and step (f), forming a through type first semiconductor from a surface of the first type semiconductor layer away from the light emitting unit toward a position corresponding to the first electrode First perforation of the layer And then forming a first extension electrode connected to the first electrode and extending outwardly through the first perforation. The method for fabricating a light-emitting diode according to claim 1, wherein the step (b) is to form a plurality of first electrodes spaced apart from each other by the multi-junction quantum well layer and the second-type semiconductor layer. The step (c) is to form an insulating layer on the gaps and the top surface of the first electrode. The method of fabricating a light-emitting diode according to claim 1, wherein the light-emitting unit further has a reflective layer formed on a surface of the second-type semiconductor layer. The method for fabricating a light-emitting diode according to claim 1, further comprising a step (g) performed before the step (c), wherein the multi-junction quantum well layer and the second-type semiconductor layer are away from the first Forming a first insulating film on a side surface of the electrode, and forming a connecting wire from a top surface of the light emitting unit along a surface of the first insulating film, wherein the step (f) is from a back surface of the first type semiconductor layer toward the connection The wire is further formed with a second through hole penetrating the first type semiconductor layer, and then formed with the second extending electrode electrically connected to the connecting wire and extending outward through the second through hole. The method for fabricating a light-emitting diode according to claim 1, wherein the step (e) is to remove the substrate for epitaxy by laser lift-off, mechanical polishing, or chemical etching. The method for fabricating a light-emitting diode according to claim 1, wherein the step (d) is to form a seed layer before the insulating layer and the top surface of the light-emitting unit, and then electroplating from the seed layer. The surface is thickened to form a metal layer, and the second electrode is obtained. The method for fabricating a light-emitting diode according to claim 1, wherein the step (d) is to form a seed layer before the insulating layer and the top surface of the light-emitting unit, and then to bond the conductive substrate to a wafer key. The junction is bonded to the seed layer to obtain the second electrode. An electrodeless light-shielding light-emitting diode comprising: a light-emitting unit having a first-type semiconductor layer and a layer formed on a multi-junction quantum well layer on a portion of the surface of the first type semiconductor layer, and a second type semiconductor layer formed on the surface of the multi-junction quantum well layer, and the first type semiconductor layer has at least one perforation; An electrode disposed on a surface of the first type semiconductor layer, spaced apart from the multi-junction quantum well layer and the second type semiconductor layer with a gap therebetween, and covering the perforation position; an insulating layer covering the light a unit and a top surface of the first electrode; an extension electrode electrically connected to the first electrode through the through hole; and a second electrode electrically connected to a top surface of the light emitting unit. The light emitting diode according to claim 8, wherein the light emitting unit further has a reflective layer formed on a surface of the second type semiconductor layer. An electrodeless light-shielding LED includes: a light-emitting unit having a first-type semiconductor layer, a multi-layer quantum well layer, and a second-type semiconductor layer, wherein the first-type semiconductor layer has a a dividing groove, and a first zone and a second zone separated from each other by the dividing groove, the first zone has a first perforation, and the second zone has a second perforation adjacent to the dividing groove, the plurality a junction quantum well layer is formed on the surface of the first region adjacent to the dividing trench, the second type semiconductor layer is formed on the surface of the multi-junction quantum well layer; a first electrode is disposed on the surface of the first region, and The multi-junction quantum well layer, and the second-type semiconductor layer are spaced apart from each other and cover the first perforation position of the first region; and an insulating layer having a multi-junction quantum well layer And a first insulating film of the second type semiconductor layer adjacent to a side of the dividing groove, and a package a second insulating film covering the surface of the first electrode; a connecting wire extending from a top surface of the second type semiconductor layer and along a surface of the first insulating film to the second region, and covering the second region a second piercing position; an extended electrode unit having a first extending electrode electrically connected to the first electrode through the first through hole, and a second extending electrode electrically connected to the connecting wire through the second through hole And a second electrode formed on the top surface of the light emitting unit and electrically connected to the light emitting unit and the connecting wire. The light emitting diode according to claim 10, wherein the light emitting unit further has a reflective layer formed on a surface of the second type semiconductor layer.