TWI519411B - Composite copper foil and its manufacturing method - Google Patents

Composite copper foil and its manufacturing method Download PDF

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TWI519411B
TWI519411B TW101104860A TW101104860A TWI519411B TW I519411 B TWI519411 B TW I519411B TW 101104860 A TW101104860 A TW 101104860A TW 101104860 A TW101104860 A TW 101104860A TW I519411 B TWI519411 B TW I519411B
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copper
layer
copper foil
nickel
foil
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TW101104860A
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TW201307054A (en
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Keisuke Yamanishi
Kengo Kaminaga
Ryo Fukuchi
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Jx Nippon Mining & Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • C25D5/12Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C25D5/14Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

複合銅箔及其製造方法 Composite copper foil and manufacturing method thereof

本發明係關於一種適於藉由蝕刻形成電路之複合銅箔及其製造方法。 The present invention relates to a composite copper foil suitable for forming a circuit by etching and a method of manufacturing the same.

印刷電路用銅箔廣泛使用於電子.電氣設備,但該印刷電路用銅箔係通常經由接著劑、或者不使用接著劑而於高溫高壓下接著於合成樹脂板或膜等基材,以製造覆銅積層板,此後為了形成所要的電路,係藉由抗蝕劑塗佈及曝光步驟對電路進行印刷,進而經過去除銅箔之多餘部分的蝕刻處理,又,進而焊接各種元件而形成電子裝置用印刷電路。 Copper foil for printed circuits is widely used in electronics. In the electrical equipment, the copper foil for a printed circuit is usually laminated on a substrate such as a synthetic resin sheet or a film at a high temperature and high pressure via an adhesive or without using an adhesive to produce a copper clad laminate, and thereafter, in order to form a desired circuit. The circuit is printed by a resist coating and exposure step, and an etching process for removing excess portions of the copper foil is performed, and further various components are soldered to form a printed circuit for an electronic device.

近年來,印刷配線板之配線密度變高,且電子零件之連接端子之間隔變小。從而必然要求使覆銅積層板之銅箔的厚度變薄。又,積層板之多層構造化亦隨時代之潮流,而對銅箔要求如厚銅箔/阻障層/薄銅箔之複合銅箔。當然,成為製作具有此種構造之覆銅積層板時之起始材料的銅箔必須具備重要之功能。 In recent years, the wiring density of printed wiring boards has become high, and the interval between connection terminals of electronic parts has become small. Therefore, it is inevitable to make the thickness of the copper foil of the copper clad laminate thin. Moreover, the multi-layer structure of the laminate is also a trend of the times, and the copper foil requires a composite copper foil such as a thick copper foil/barrier layer/thin copper foil. Of course, the copper foil which is the starting material for the production of the copper clad laminate having such a structure must have an important function.

具有厚銅箔/鎳層/薄銅箔之3層構造之銅箔,已知有如下情形:作為基底(載持體)之材料,使用厚質之壓延銅箔或電解銅箔,於該壓延銅箔或電解銅箔上形成薄鎳被膜,進而於該鎳被膜上形成薄銅層(參照專利文獻1、專利文獻2、專利文獻3、專利文4、專利文獻5)。 A copper foil having a three-layer structure of a thick copper foil/nickel layer/thin copper foil is known as a material of a substrate (carrier), and a thick rolled copper foil or an electrolytic copper foil is used for the calendering. A thin nickel film is formed on the copper foil or the electrolytic copper foil, and a thin copper layer is formed on the nickel film (see Patent Document 1, Patent Document 2, Patent Document 3, Patent Document 4, and Patent Document 5).

具有載持體之銅箔由於為薄銅層經蝕刻而形成電路之 基本材料,故為壓延銅箔或電解銅箔之基底之銅層最後會藉由蝕刻而被去除,鎳層亦會被去除。而且,於薄銅層側形成電路。 The copper foil with the carrier is formed by etching the thin copper layer As a basic material, the copper layer which is the base of the rolled copper foil or the electrolytic copper foil is finally removed by etching, and the nickel layer is also removed. Moreover, a circuit is formed on the side of the thin copper layer.

該情形時之壓延銅箔或電解銅箔之基底銅層係發揮有助於電路構成用薄銅箔之處理的作用,且鎳層係發揮中間層之作用,故於電路形成時會被去除。 In this case, the base copper layer of the rolled copper foil or the electrolytic copper foil serves to facilitate the treatment of the thin copper foil for circuit formation, and the nickel layer functions as an intermediate layer, so that it is removed at the time of circuit formation.

因此,於具有該等目的之厚銅箔/鎳層/薄銅箔之3層構造的複合銅箔,鎳層與薄銅箔間之密合性只要是於處理中不會剝離即可的程度就好,並不十分重要。 Therefore, in the composite copper foil having a three-layer structure of a thick copper foil/nickel layer/thin copper foil having such a purpose, the adhesion between the nickel layer and the thin copper foil is not to be peeled off during the treatment. Just fine, not very important.

另一方面,亦具有著重於銅層與鎳層之密合性之文獻。於專利文獻6,為此提出有將與鎳層接觸之銅層之表面粗糙度作為特定條件而使耐剝離性提高。 On the other hand, there is also a literature focusing on the adhesion between the copper layer and the nickel layer. Patent Document 6 proposes to improve the peeling resistance by setting the surface roughness of the copper layer in contact with the nickel layer as a specific condition.

於鎳層上略微形成有氧化膜,故於在該鎳層上鍍敷有銅之情形時,就鎳層與形成於其上之銅層的密合性而言,即便使表面變粗糙,因該氧化膜而亦不會大幅提高剝離容易度。 An oxide film is slightly formed on the nickel layer. Therefore, when copper is plated on the nickel layer, even if the surface of the nickel layer is roughened by the adhesion of the copper layer formed thereon, This oxide film does not greatly improve the ease of peeling.

進而,提出有於鎳層上,較薄地形成例如銅層作為密合性提高層,並將該銅層與厚質之銅箔壓接(參照專利文獻4)。 Further, it has been proposed to form a copper layer as a adhesion improving layer on a nickel layer, and to bond the copper layer to a thick copper foil (see Patent Document 4).

除此之外,提出有中間挾持有鎳之銅壓延而成的被覆材料(clad material)(參照專利文獻7、專利文獻8)。然而,於組合不同種步驟之鍍敷步驟與壓延步驟時,會使製造成本變大,又,此種機械性之方法,會有難以獲得均勻厚度且儘可能薄之銅之積層構造的問題。又,為了藉由壓延而 與壓延輥相接之銅箔表面變平滑,於需要與樹脂之密合時,需要實施粗化處理。 In addition, a clad material in which copper of nickel is rolled in the middle is proposed (see Patent Document 7 and Patent Document 8). However, when the plating step and the calendering step of different kinds of steps are combined, the manufacturing cost is increased, and such a mechanical method has a problem that it is difficult to obtain a laminated structure of copper having a uniform thickness and being as thin as possible. Also, in order to be calendered The surface of the copper foil which is in contact with the calender roll becomes smooth, and when it is necessary to adhere to the resin, it is necessary to carry out a roughening treatment.

總而言之,認為目前並未解決如下等課題:如今,印刷配線板之配線密度變高,被要求將電子零件之連接端子之間隔縮小,進而以低成本製作該等。 In short, it is considered that the following problems have not been solved: the wiring density of printed wiring boards is now high, and it is required to reduce the interval between the connection terminals of electronic components, and to manufacture them at low cost.

專利文獻1:日本特開昭58-108785號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. SHO 58-108785

專利文獻2:日本專利第3680321號公報 Patent Document 2: Japanese Patent No. 3683032

專利文獻3:日本專利第3543348號公報 Patent Document 3: Japanese Patent No. 3543348

專利文獻4:日本特開2005-72425號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2005-72425

專利文獻5:日本專利第4191977號公報 Patent Document 5: Japanese Patent No. 4191977

專利文獻6:日本特開平8-181432號公報 Patent Document 6: Japanese Patent Laid-Open No. Hei 8-181432

專利文獻7:國際公開WO00-05934號公報 Patent Document 7: International Publication WO00-05934

專利文獻8:日本專利第4195162號公報 Patent Document 8: Japanese Patent No. 4195162

本發明之課題在於獲得一種於製造由銅/鎳/銅構成之複合銅箔時,可提高鎳與銅之接合強度、且適於藉由蝕刻形成電路之複合銅箔及其製造方法。 An object of the present invention is to provide a composite copper foil which is capable of improving the bonding strength between nickel and copper when a composite copper foil composed of copper/nickel/copper is formed, and which is suitable for forming an electric circuit by etching, and a method for producing the same.

本發明人等獲得如下知識見解:藉由對鍍銅與鍍鎳之步驟進行設計來可改善先前複合銅箔之缺點即鎳與銅之接合強度不足,藉此可解決先前之問題。 The present inventors have obtained the knowledge that the disadvantages of the prior composite copper foil, that is, the insufficient bonding strength of nickel and copper, can be solved by designing the steps of copper plating and nickel plating, whereby the previous problems can be solved.

本發明係基於該知識見解而提供一種: The present invention provides a basis based on this knowledge insight:

(1)由銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150 μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3 μm之鎳層(B)、形成於該 鎳層(B)上且厚度為1~12 μm之銅層(C);且無氧化物層介於上述鎳層(B)與上述銅層(C)之間。 (1) A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or one side of the foil (A), and having a thickness a nickel layer (B) of 0.5 to 3 μm formed in the a copper layer (C) having a thickness of 1 to 12 μm on the nickel layer (B); and an oxide-free layer interposed between the nickel layer (B) and the copper layer (C).

又,本發明提供一種: Also, the present invention provides a method:

(2)由銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150 μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3 μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~12 μm之銅層(C);且其剝離強度為0.5 kg/cm以上。 (2) A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or one side of the foil (A) and having a thickness It is a nickel layer (B) of 0.5 to 3 μm, a copper layer (C) having a thickness of 1 to 12 μm formed on the nickel layer (B), and a peel strength of 0.5 kg/cm or more.

又,本發明提供一種: Also, the present invention provides a method:

(3)如上述(1)之由銅/鎳/銅構成之複合銅箔,其具備:厚度為10~150 μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面,且厚度為0.5~3 μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~12 μm之銅層(C);且其剝離強度為0.5 kg/cm以上。 (3) A composite copper foil composed of copper/nickel/copper according to the above (1), comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed in the foil (A) a nickel layer (B) having a thickness of 0.5 to 3 μm on both sides or a single side, a copper layer (C) having a thickness of 1 to 12 μm formed on the nickel layer (B); and a peel strength of 0.5 kg/ More than cm.

又,本發明提供一種: Also, the present invention provides a method:

(4)由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150 μm之壓延銅箔或電解銅箔(A)之兩面或單面,藉由電鍍形成厚度0.5~3 μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為1~12 μm之銅層(C)。 (4) A method for producing a composite copper foil composed of copper/nickel/copper, formed on both sides or one side of a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm by plating to a thickness of 0.5 to 3 The nickel layer (B) of μm is continuously formed into a copper layer (C) having a thickness of 1 to 12 μm by electroplating immediately after plating the nickel layer (B).

又,本發明提供一種: Also, the present invention provides a method:

(5)如上述(4)之複合銅箔之製造方法,其中,於上述銅層(C)上形成Cr含量為10~50 μg/dm2之防銹層。 (5) The method for producing a composite copper foil according to the above (4), wherein a rust-preventing layer having a Cr content of 10 to 50 μg/dm 2 is formed on the copper layer (C).

本發明具有如下等明顯之效果:可獲得一種於製造由 銅/鎳/銅構成之複合銅箔時,可提高鎳與銅之接合強度,且適於藉由蝕刻形成電路之複合銅箔及其製造方法。 The present invention has the following obvious effects: one can be obtained by manufacturing In the case of a composite copper foil composed of copper/nickel/copper, the bonding strength between nickel and copper can be improved, and it is suitable for a composite copper foil in which an electric circuit is formed by etching and a method for producing the same.

於製造本發明之由銅/鎳/銅構成之複合銅箔時,可使用如圖1所示之曲折式電鍍裝置。成為起始材料之銅箔,使用厚度為10~150 μm之壓延銅箔或電解銅箔(A)。對該箔(A)之兩面或單面實施電鍍鎳。 When manufacturing the composite copper foil composed of copper/nickel/copper of the present invention, a zigzag plating apparatus as shown in Fig. 1 can be used. As the copper foil to be used as the starting material, a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm is used. Nickel plating is performed on both sides or one side of the foil (A).

於圖1中,自圖1之左側起進入鍍敷層,向右移動形成特定厚度之鍍鎳層,即厚度0.5~3 μm之鎳層(B)。其原因在於,於該情形時,若未達鎳層之下限值即0.5 μm,則易於產生針孔(pinhole),又,若超過上限值即3 μm,則最終剝離或溶解鎳層時之負擔會變大,而使生產效率變差。 In Fig. 1, the plating layer is introduced from the left side of Fig. 1, and is moved to the right to form a nickel plating layer of a specific thickness, that is, a nickel layer (B) having a thickness of 0.5 to 3 μm. This is because, in this case, if the lower limit of the nickel layer is 0.5 μm, pinholes are likely to occur, and if the upper limit is exceeded, that is, 3 μm, the nickel layer is finally peeled off or dissolved. The burden will become larger and the production efficiency will be worse.

如圖1所示,於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為1~12 μm之銅層(C)。銅層(C)之下限值設為1 μm。該銅層(C)為形成電路之材料者,下限值係為了維持電路之特性而必需之厚度。又,銅層(C)之上限值設為12 μm。其原因在於,於該層成為超過12 μm之厚度時,由於鍍敷方法(曲折式鍍敷法)之限制而膜厚度之調整變難,而於形成有不均勻之膜時,用以形成電路之蝕刻性會惡化。 As shown in FIG. 1, immediately after the plating of the nickel layer (B), a copper layer (C) having a thickness of 1 to 12 μm is continuously formed by electroplating. The lower limit of the copper layer (C) is set to 1 μm. The copper layer (C) is a material for forming a circuit, and the lower limit is a thickness necessary to maintain the characteristics of the circuit. Further, the upper limit of the copper layer (C) was set to 12 μm. The reason for this is that when the layer becomes a thickness of more than 12 μm, the adjustment of the film thickness is difficult due to the limitation of the plating method (zigzag plating method), and when a film having unevenness is formed, the circuit is formed. The etchability deteriorates.

重要的是,該銅層連續地形成於鍍鎳。先前,有下列之隱憂:若於鍍鎳後連續地進行鍍銅,則附著於被鍍敷物上之鍍鎳液會混入鍍銅液等隱憂,就該等隱憂而言,避免該 等之情形被考慮為業者間之常識。然而實際上可知污染不多。 Importantly, the copper layer is continuously formed on nickel plating. Previously, there was a concern that if copper plating was continuously performed after nickel plating, the nickel plating liquid adhering to the object to be plated would be mixed with the copper plating liquid, and in the case of such a worries, avoid this. The situation is considered as common sense among the industry. However, in fact, it is known that there is not much pollution.

而且,藉由進一步採用如上述連續鍍敷方法,可知會有鎳層之氧化會消失的非常明顯效果。 Further, by further adopting the above-described continuous plating method, it is understood that there is a very remarkable effect that the oxidation of the nickel layer disappears.

若鎳層之氧化得到抑制,則產生使鎳與銅之密合性變良好之較大效果。再者,銅層本身為耐氧化性豐富之材料,於形成有鍍銅層之階段,變得幾乎不會發現氧化膜之形成。 When the oxidation of the nickel layer is suppressed, a large effect of improving the adhesion between nickel and copper occurs. Further, the copper layer itself is a material rich in oxidation resistance, and at the stage of forming a copper plating layer, formation of an oxide film is hardly observed.

於上述銅層(C)上,可進一步形成Cr含量為10~50 μg/dm2之防銹層。其通常被稱為鉻層或者鉻酸鹽層。於圖1,亦圖示有形成該防銹層之步驟,但該步驟並非必需。然而,就抑制鍍銅層之稍微之氧化、或預防腐蝕性物質之附著之意圖而言有效。 On the copper layer (C), a rust-preventing layer having a Cr content of 10 to 50 μg/dm 2 can be further formed. It is often referred to as a chromium layer or a chromate layer. In Fig. 1, the step of forming the rustproof layer is also illustrated, but this step is not essential. However, it is effective in suppressing the slight oxidation of the copper plating layer or preventing the adhesion of corrosive substances.

因此,該防銹步驟為較佳之形態。若Cr含量未達10 μg/dm2,則防銹層之控制會變困難,因此設為該以上。又,若Cr含量超過50 μg/dm2,則效果飽和,且由於步驟增加產生之負擔變大,因此較理想的是將上限值設為如上所述。 Therefore, the rust preventing step is a preferred form. When the Cr content is less than 10 μg/dm 2 , the control of the rust-preventing layer becomes difficult, and therefore it is set to the above. Further, when the Cr content exceeds 50 μg/dm 2 , the effect is saturated, and the burden due to the increase in steps becomes large. Therefore, it is preferable to set the upper limit value as described above.

銅層(C)係藉由蝕刻形成電路之銅部分,且係薄層,因此其厚度之控制較為重要。又,如上所述,完全未發現鎳層(B)上之銅層(C)之剝離。其係本案發明之較大特徵。 The copper layer (C) is formed by etching to form a copper portion of the circuit and is a thin layer, so the control of its thickness is important. Further, as described above, peeling of the copper layer (C) on the nickel layer (B) was not observed at all. It is a major feature of the invention of the present invention.

通常,於該複合銅箔中,於蝕刻使用鹼系蝕刻液。其目的在於停止電路之鎳層蝕刻。然而,只要為可蝕刻至鎳層上停止之蝕刻液,則即便並非鹼系亦可,並不阻礙其他蝕刻液之使用。可視需要替換蝕刻液。 Usually, in the composite copper foil, an alkali etching liquid is used for etching. The purpose is to stop the nickel layer etching of the circuit. However, as long as it is an etching liquid which can be etched to the nickel layer, the use of other etching liquids is not inhibited even if it is not an alkali system. Replace the etchant as needed.

對於該蝕刻方法,雖並非為直接與本發明案相關者,但為成為參考之周邊技術而理解者。藉此,可將銅之電路間調整為與銅層之厚度對應之寬度。 The etching method is not directly related to the present invention, but is understood by reference to the surrounding technology. Thereby, the copper circuit can be adjusted to have a width corresponding to the thickness of the copper layer.

下述表示代表性且較佳之鍍敷條件之例。 The following are examples of representative and preferred plating conditions.

(鍍銅:曲折式) (copper plating: zigzag)

銅:10~50 g/l Copper: 10~50 g/l

硫酸:50~100 g/l Sulfuric acid: 50~100 g/l

溫度:40~60℃ Temperature: 40~60°C

電流密度:1~5 A/dm2 Current density: 1~5 A/dm 2

(鍍鎳) (nickel plating)

硫酸鎳:250~300 g/L Nickel sulfate: 250~300 g/L

氯化鎳:35~45 g/L Nickel chloride: 35~45 g/L

乙酸鎳:10~20 g/L Nickel acetate: 10~20 g/L

檸檬酸三鈉:15~30 g/L Trisodium citrate: 15~30 g/L

光澤劑:糖精、丁炔二醇等 Gloss agent: saccharin, butynediol, etc.

十二基硫酸鈉:30~100 ppm Sodium dodecyl sulfate: 30~100 ppm

pH:4~6 pH: 4~6

浴溫:50~70℃ Bath temperature: 50~70°C

(鉻酸鹽處理之條件) (conditions for chromate treatment) (A)浸漬鉻酸鹽處理 (A) impregnated chromate treatment

K2Cr2O7(Na2Cr2O7或者CrO3):0.1~5 g/升 K 2 Cr 2 O 7 (Na 2 Cr 2 O 7 or CrO 3 ): 0.1 to 5 g / liter

ph:2~13 Ph: 2~13

溫度:常溫~60℃ Temperature: normal temperature ~ 60 ° C

時間:5~30秒 Time: 5~30 seconds

(B)電解鉻酸鹽處理 (B) Electrolytic chromate treatment

K2Cr2O7(Na2Cr2O7或者CrO3):2~10 g/升 K 2 Cr 2 O 7 (Na 2 Cr 2 O 7 or CrO 3 ): 2~10 g/liter

NaOH或者KOH:10~50 g/升 NaOH or KOH: 10~50 g/L

pH:7~13 pH: 7~13

浴溫:20~80℃ Bath temperature: 20~80°C

電流密度Dk:0.05~5 A/dm2 Current density D k : 0.05~5 A/dm 2

時間:5~30秒 Time: 5~30 seconds

陽極:Pt-Ti板、鉛板等 Anode: Pt-Ti plate, lead plate, etc.

(鹼蝕刻之條件) (conditions for alkali etching)

NH4OH:6莫耳/升 NH 4 OH: 6 mol / liter

NH4Cl:5莫耳/升 NH 4 Cl: 5 mol / liter

CuCl2:2莫耳/升 CuCl 2 : 2 mol / liter

液溫:50℃ Liquid temperature: 50 ° C

(鎳等附著量分析方法) (Method for analyzing the adhesion amount of nickel etc.)

為了對鎳處理面進行分析,將樣品裁切成例如5 cm見方,並利用濃度為30%之硝酸而使該樣品溶解,將燒杯中之溶解液稀釋成5000倍,由原子吸光分析進行鎳之定量分析。 In order to analyze the nickel-treated surface, the sample is cut into, for example, 5 cm square, and the sample is dissolved by using a nitric acid having a concentration of 30%, and the solution in the beaker is diluted to 5000 times, and nickel is formed by atomic absorption analysis. Quantitative analysis.

(鉻之附著量分析方法) (Chromium adhesion analysis method)

為了對處理面進行分析,將反面以FR-4樹脂加壓製作並進行遮蔽。利用濃度為10%之鹽酸,將該樣品煮沸3分鐘而使處理層溶解,由原子吸光分析,對該溶液進行鉻之定量分析。 In order to analyze the treated surface, the reverse side was pressed with FR-4 resin and masked. The sample was boiled for 3 minutes using hydrochloric acid having a concentration of 10%, and the treated layer was dissolved, and the solution was subjected to quantitative analysis of chromium by atomic absorption analysis.

使用上述複合銅箔製作覆銅積層板,並形成使用有該 覆銅積層板之電路時,在銅層(C)及上述壓延銅箔或電解銅箔(A)上形成電路形成用抗蝕圖案,進而使用鹼蝕刻液,將附有上述抗蝕圖案部分以外之上述壓延銅箔或電解銅箔(A)及銅層(C)之多餘部分去除。 Making a copper clad laminate using the above composite copper foil, and forming the use In the circuit of the copper clad laminate, a resist pattern for circuit formation is formed on the copper layer (C), the rolled copper foil or the electrolytic copper foil (A), and an alkali etching liquid is used, and the resist pattern portion is attached. The excess portion of the rolled copper foil or the electrolytic copper foil (A) and the copper layer (C) is removed.

接著,進行光阻去除,若需要則進一步藉由軟蝕刻等而去除殘餘部之鎳層(B)。自該抗蝕圖案之形成起至不要的銅箔去除係通常進行之方法,因此無需多作說明,故省略。 Next, photoresist removal is performed, and if necessary, the nickel layer (B) of the remaining portion is further removed by soft etching or the like. The method of performing the copper foil removal from the formation of the resist pattern to the unnecessary one is not necessary, and therefore will not be described.

於使用銅箔之情形時,亦可相同地應用於電解銅箔之粗化面(M面)或光澤面(S面),但蝕刻之面係通常使用光澤面側。於使用壓延銅箔之情形時,亦可使用高純度壓延銅箔或已提高強度之壓延合金銅箔。本案發明包含所有該等銅箔。 In the case of using a copper foil, the same can be applied to the roughened surface (M surface) or the shiny surface (S surface) of the electrolytic copper foil, but the surface to be etched is usually the shiny side. In the case of using a rolled copper foil, a high-purity rolled copper foil or a rolled alloy copper foil having improved strength can also be used. The invention of the present invention encompasses all such copper foils.

又,於實施本案發明時,只要不與本案發明發生矛盾,則可利用所有上述敍述之公知技術。 Further, in carrying out the invention of the present invention, any well-known technique described above can be utilized as long as it does not contradict the invention of the present invention.

實施例 Example

接著,對本發明之實施例及比較例進行說明。再者,本實施例係用以使理解變得容易,並不限制於上述例。即,本發明於本說明書中記載之技術思想之範圍內,包含所有除上述所示之實施例外之態樣或者變形。 Next, examples and comparative examples of the present invention will be described. Furthermore, the present embodiment is intended to facilitate understanding and is not limited to the above examples. That is, the present invention includes all aspects or modifications other than the above-described embodiments of the invention within the scope of the technical idea described in the present specification.

(實施例1) (Example 1)

作為基底箔,使用70 μm厚之電解銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該電解銅箔施以0.7 μm之鍍鎳(B)。其次,於該鍍鎳層(B)上, 連續地形成10 μm之電鍍銅層(C)。藉此,製造由銅/鎳/銅構成之複合銅箔。 As the base foil, a 70 μm thick electrolytic copper foil (A) was used. The electrolytic copper foil was subjected to nickel plating (B) of 0.7 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Secondly, on the nickel plating layer (B), A 10 μm plated copper layer (C) was continuously formed. Thereby, a composite copper foil composed of copper/nickel/copper was produced.

對於以此方式製造之複合銅箔之密合性,於薄銅箔側以150℃以上對基材進行積層,對剝離強度進行測定。於可產生剝離且在剝離強度未達0.5 kg/cm而剝離時設為「×」。於不會剝離、或者剝離強度為0.5 kg/cm以上之情形時設為「○」。 With respect to the adhesion of the composite copper foil produced in this manner, the substrate was laminated on the side of the thin copper foil at 150 ° C or higher, and the peel strength was measured. It is set to "x" when peeling is possible and peeling strength is less than 0.5 kg/cm. When it is not peeled off or the peeling strength is 0.5 kg/cm or more, it is set to "○".

為了確認鎳層之阻障效果,在極薄銅箔之表面上貼附樹脂作為覆銅積層板後,藉由抗蝕劑塗佈及曝光步驟,於壓延銅箔或電解銅箔表面上印刷10條電路,利用銅專用之蝕刻液去除銅箔之多餘部分,從而確認阻障效果。 In order to confirm the barrier effect of the nickel layer, a resin is applied as a copper-clad laminate on the surface of the ultra-thin copper foil, and then printed on the surface of the rolled copper foil or the electrolytic copper foil by a resist coating and exposure step. The strip circuit uses an etching solution for copper to remove excess portions of the copper foil to confirm the barrier effect.

將蝕刻至鎳層停止之情形設為「○」,於蝕刻至銅層(C)情形時設為「×」。進而,於蝕刻至鎳層停止之情形時,利用鎳專用之蝕刻液去除鎳層,藉此確認鎳層之去除性。將可澈底去除之情形設為「○」,將未能澈底去除之情形設為「×」。 The case where the etching to the nickel layer is stopped is set to "○", and when it is etched to the copper layer (C), it is set to "x". Further, when etching is performed until the nickel layer is stopped, the nickel layer is removed by an etching solution for nickel, thereby confirming the removability of the nickel layer. The case where the bottom can be removed is set to "○", and the case where the bottom is not removed is set to "x".

以上之結果,密合性、鎳層之阻障性、及去除性均良好。將該結果同樣示於表1 As a result of the above, the adhesion, the barrier property of the nickel layer, and the removability were good. The results are also shown in Table 1.

(實施例2) (Example 2)

作為基底箔,使用12 μm厚之壓延銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該壓延銅箔施以0.6 μm之鍍鎳(B)。其次,於該鍍鎳層(B)上,連續地形成5 μm之電鍍銅層(C)。 As the base foil, a rolled copper foil (A) having a thickness of 12 μm was used. The rolled copper foil was subjected to nickel plating (B) of 0.6 μm using the plating apparatus shown in Fig. 1 and using the above plating conditions. Next, on the nickel plating layer (B), a 5 μm plated copper layer (C) was continuously formed.

藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性、鎳層之阻障性、及去除性均良好。將該結果同樣示於表1。 As a result of the above, the adhesion, the barrier property of the nickel layer, and the removability were good. The results are also shown in Table 1.

(實施例3) (Example 3)

作為基底箔,使用18 μm厚之電解銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該電解銅箔施以1 μm之鍍鎳(B)。其次,於該鍍鎳層(B)上,連續地形成10 μm之電鍍銅層(C)。 As the base foil, an electrolytic copper foil (A) having a thickness of 18 μm was used. The electrolytic copper foil was subjected to nickel plating (B) of 1 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, on the nickel plating layer (B), a 10 μm plated copper layer (C) was continuously formed.

藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性、鎳層之阻障性、及去除性均良好。將該結果同樣示於表1。 As a result of the above, the adhesion, the barrier property of the nickel layer, and the removability were good. The results are also shown in Table 1.

(實施例4) (Example 4)

作為基底箔,使用35 μm厚之壓延銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該壓延銅箔施以3 μm之鍍鎳(B)。其次,於該鍍鎳層(B)上,連續地形成20 μm之電鍍銅層(C)。進而,使用上述浸漬條件,進行鉻酸鹽處理。 As the base foil, a rolled copper foil (A) having a thickness of 35 μm was used. The rolled copper foil was subjected to nickel plating (B) of 3 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, on the nickel plating layer (B), a 20 μm plated copper layer (C) was continuously formed. Further, chromate treatment was carried out using the above immersion conditions.

藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性、鎳層之阻障性、及去除性均良好。將該結果同樣示於表1。 As a result of the above, the adhesion, the barrier property of the nickel layer, and the removability were good. The results are also shown in Table 1.

(實施例5) (Example 5)

作為基底箔,使用18μm厚之壓延銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該壓延銅箔施以1μm之鍍鎳(B)。其次,於該鍍鎳層(B)上,連續地形成10μm之電鍍銅層(C)。進而,使用上述浸漬條件,進行鉻酸鹽處理。 As the base foil, a rolled copper foil (A) having a thickness of 18 μm was used. The rolled copper foil was subjected to nickel plating (B) of 1 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, on the nickel plating layer (B), a 10 μm plated copper layer (C) was continuously formed. Further, chromate treatment was carried out using the above immersion conditions.

藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性、鎳層之阻障性、及去除性均良好。將該結果同樣示於表1。 As a result of the above, the adhesion, the barrier property of the nickel layer, and the removability were good. The results are also shown in Table 1.

(比較例1) (Comparative Example 1)

作為基底箔,使用18μm厚之電解銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該電解銅箔施以1μm之鍍鎳(B)。接著,暫時中斷鍍敷,再使用如圖1所示之鋸齒式鍍敷裝置,於該層(B)上形成10μm之電鍍銅層。藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 As the base foil, an electrolytic copper foil (A) having a thickness of 18 μm was used. The electrolytic copper foil was subjected to nickel plating (B) of 1 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, the plating was temporarily interrupted, and a 10 μm plated copper layer was formed on the layer (B) using a sawtooth plating apparatus as shown in FIG. Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,鎳層之阻障性、及去除性均良好,但強度未達0.5kg/cm而於鎳層與薄銅箔之間發生剝離。將該結果同樣示於表1。 As a result of the above, the nickel layer was excellent in barrier properties and removability, but the strength was less than 0.5 kg/cm, and peeling occurred between the nickel layer and the thin copper foil. The results are also shown in Table 1.

於暫時中斷鍍敷,再進行鍍銅之情形時,在鍍鎳與鍍銅之間發生電鍍中斷,而使氧化膜形成於鎳層上之可能性高,認為該情形對密合性造成影響。 When the plating is temporarily interrupted and copper plating is performed, the plating is interrupted between the nickel plating and the copper plating, and the possibility that the oxide film is formed on the nickel layer is high, and this case is considered to have an influence on the adhesion.

(比較例2) (Comparative Example 2)

作為基底箔,使用35μm厚之電解銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該電解銅箔施以10μm之鍍鎳(B)。接著,再使用如圖1所示之鋸齒式鍍敷裝置,於該層(B)上形成7μm之電鍍銅層。藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 As the base foil, a 35 μm thick electrolytic copper foil (A) was used. The electrolytic copper foil was subjected to nickel plating (B) of 10 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, a 7 μm plated copper layer was formed on the layer (B) using a sawtooth plating apparatus as shown in FIG. Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性、鎳層之阻障性良好,但由於鎳層較厚,故於鎳去除之蝕刻中,未能澈底去除。將該結果同樣示於表1。 As a result of the above, the adhesion and the barrier property of the nickel layer were good. However, since the nickel layer was thick, it was not removed in the etching of the nickel removal. The results are also shown in Table 1.

(比較例3) (Comparative Example 3)

作為基底箔,使用70μm厚之壓延銅箔(A)。使用圖1所示之鍍敷裝置,並使用上述鍍敷條件,對該壓延銅箔施以0.3μm之鍍鎳(B)。接著,再使用如圖1所示之鋸齒式鍍敷裝置,於該層(B)上形成10μm之電鍍銅層。藉此,製造由銅/鎳/銅構成之複合銅箔。其他試驗條件係與實施例1相同。 As the base foil, a rolled copper foil (A) having a thickness of 70 μm was used. The rolled copper foil was subjected to nickel plating (B) of 0.3 μm using the plating apparatus shown in Fig. 1 and using the plating conditions described above. Next, a 10 μm plated copper layer was formed on the layer (B) using a sawtooth plating apparatus as shown in FIG. Thereby, a composite copper foil composed of copper/nickel/copper was produced. The other test conditions were the same as in Example 1.

以上之結果,密合性良好,但由於鎳層較薄,於銅箔之去除時,鎳亦被去除,從而蝕刻至銅層(C)。將該結果同樣示於表1。 As a result of the above, the adhesion was good. However, since the nickel layer was thin, nickel was removed during the removal of the copper foil, and the copper layer (C) was etched. The results are also shown in Table 1.

本發明具有如下等明顯之效果:可獲得一種於製造由 銅/鎳/銅構成之複合銅箔時,可提高鎳與銅之接合強度,且適於藉由蝕刻形成電路之複合銅箔及其製造方法。 The present invention has the following obvious effects: one can be obtained by manufacturing In the case of a composite copper foil composed of copper/nickel/copper, the bonding strength between nickel and copper can be improved, and it is suitable for a composite copper foil in which an electric circuit is formed by etching and a method for producing the same.

圖1係表示於製造由銅/鎳/銅構成之複合銅箔時使用之曲折式電鍍裝置的例子。 Fig. 1 is a view showing an example of a meander type plating apparatus used in the production of a composite copper foil composed of copper/nickel/copper.

Claims (25)

一種銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~12μm之銅層(C);且無氧化物層介於該鎳層(B)與銅層(C)之間,將該壓延銅箔或電解銅箔(A)之至少一部分用作電路。 A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or a single side of the foil (A) and having a thickness of 0.5 to 3 μm. a nickel layer (B), a copper layer (C) formed on the nickel layer (B) and having a thickness of 1 to 12 μm; and an oxide-free layer interposed between the nickel layer (B) and the copper layer (C) At least a part of the rolled copper foil or the electrolytic copper foil (A) is used as an electric circuit. 一種銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~12μm之銅層(C);且無氧化物層介於該鎳層(B)與銅層(C)之間,將該壓延銅箔或電解銅箔(A)之至少一部分及該銅層(C)之至少一部分用作電路。 A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or a single side of the foil (A) and having a thickness of 0.5 to 3 μm. a nickel layer (B), a copper layer (C) formed on the nickel layer (B) and having a thickness of 1 to 12 μm; and an oxide-free layer interposed between the nickel layer (B) and the copper layer (C) At least a part of the rolled copper foil or the electrolytic copper foil (A) and at least a part of the copper layer (C) are used as an electric circuit. 一種銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為5~20μm之銅層(C);且無氧化物層介於該鎳層(B)與銅層(C)之間。 A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or a single side of the foil (A) and having a thickness of 0.5 to 3 μm. a nickel layer (B), a copper layer (C) formed on the nickel layer (B) and having a thickness of 5 to 20 μm; and an oxide-free layer interposed between the nickel layer (B) and the copper layer (C) . 如申請專利範圍第1至3項中任一項之銅/鎳/銅構成之複合銅箔,其中,該鎳層(B)與該銅層(C)之間的剝離強度為0.5kg/cm以上。 A composite copper foil composed of copper/nickel/copper according to any one of claims 1 to 3, wherein the peel strength between the nickel layer (B) and the copper layer (C) is 0.5 kg/cm. the above. 一種銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之 兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~12μm之銅層(C)之複合銅箔;且該鎳層(B)與該銅層(C)之間的剝離強度為0.5kg/cm以上。 A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed in the foil (A) a nickel layer (B) having a thickness of 0.5 to 3 μm on both sides or a single side, a composite copper foil formed on the nickel layer (B) and having a copper layer (C) having a thickness of 1 to 12 μm; and the nickel layer (B) The peeling strength with the copper layer (C) is 0.5 kg/cm or more. 一種銅/鎳/銅構成之複合銅箔,係具備:厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為5~20μm之銅層(C)之複合銅箔;且該鎳層(B)與銅層(C)之間的剝離強度為0.5kg/cm以上。 A composite copper foil composed of copper/nickel/copper, comprising: a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm, formed on both sides or a single side of the foil (A) and having a thickness of 0.5 to 3 μm. a nickel layer (B), a composite copper foil formed on the nickel layer (B) and having a copper layer (C) having a thickness of 5 to 20 μm; and a peeling between the nickel layer (B) and the copper layer (C) The strength is 0.5 kg/cm or more. 如申請專利範圍第5或6項之銅/鎳/銅構成之複合銅箔,其中,將該壓延銅箔或電解銅箔(A)之至少一部分用作電路。 A composite copper foil comprising copper/nickel/copper according to the fifth or sixth aspect of the patent application, wherein at least a part of the rolled copper foil or the electrolytic copper foil (A) is used as an electric circuit. 如申請專利範圍第5或6項之銅/鎳/銅構成之複合銅箔,其中,將該壓延銅箔或電解銅箔(A)之至少一部分及該銅層(C)之至少一部分用作電路。 A composite copper foil comprising copper/nickel/copper according to claim 5 or 6, wherein at least a portion of the rolled copper foil or the electrolytic copper foil (A) and at least a portion of the copper layer (C) are used as Circuit. 一種覆銅積層板,係使用申請專利範圍第1至8項中任一項之複合銅箔而製成。 A copper-clad laminate produced by using the composite copper foil of any one of claims 1 to 8. 一種印刷配線板,係使用申請專利範圍第1至8項中任一項之複合銅箔而製成。 A printed wiring board produced by using the composite copper foil of any one of claims 1 to 8. 一種電子‧電氣設備,其使用有申請專利範圍第10項之印刷配線板。 An electronic ‧ electrical device using a printed wiring board of claim 10 一種由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150μm之壓延銅箔或電解銅箔(A)之兩面或單 面,藉由電鍍形成厚度0.5~3μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為1~12μm之銅層(C);該複合銅箔被使用於將該壓延銅箔或電解銅箔(A)之至少一部分用作電路的用途。 A method for manufacturing a composite copper foil composed of copper/nickel/copper, on both sides or single sheets of rolled copper foil or electrolytic copper foil (A) having a thickness of 10 to 150 μm a nickel layer (B) having a thickness of 0.5 to 3 μm is formed by electroplating, and immediately after plating the nickel layer (B), a copper layer (C) having a thickness of 1 to 12 μm is continuously formed by electroplating; the composite copper The foil is used for the purpose of using at least a part of the rolled copper foil or the electrolytic copper foil (A) as a circuit. 一種由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150μm之壓延銅箔或電解銅箔(A)之兩面或單面,藉由電鍍形成厚度0.5~3μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為1~12μm之銅層(C);該複合銅箔被使用於將該壓延銅箔或電解銅箔(A)之至少一部分及該銅層(C)之至少一部分用作電路的用途。 A method for manufacturing a composite copper foil composed of copper/nickel/copper, forming a nickel layer having a thickness of 0.5 to 3 μm by electroplating on both sides or one side of a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm. (B), immediately after plating the nickel layer (B), a copper layer (C) having a thickness of 1 to 12 μm is continuously formed by electroplating; the composite copper foil is used for the rolled copper foil or the electrolytic copper foil At least a portion of (A) and at least a portion of the copper layer (C) are used for circuit purposes. 一種由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150μm之壓延銅箔或電解銅箔(A)之兩面或單面,藉由電鍍形成厚度0.5~3μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為5~20μm之銅層(C)。 A method for manufacturing a composite copper foil composed of copper/nickel/copper, forming a nickel layer having a thickness of 0.5 to 3 μm by electroplating on both sides or one side of a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm. (B) Immediately after plating the nickel layer (B), a copper layer (C) having a thickness of 5 to 20 μm is continuously formed by electroplating. 一種由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150μm之壓延銅箔或電解銅箔(A)之兩面或單面,藉由電鍍形成厚度0.5~3μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為1~12μm之銅層(C),該鎳層(B)與該銅層(C)之間的剝離強度為0.5kg/cm以上。 A method for manufacturing a composite copper foil composed of copper/nickel/copper, forming a nickel layer having a thickness of 0.5 to 3 μm by electroplating on both sides or one side of a rolled copper foil or an electrolytic copper foil (A) having a thickness of 10 to 150 μm. (B), immediately after plating the nickel layer (B), a copper layer (C) having a thickness of 1 to 12 μm is continuously formed by electroplating, and between the nickel layer (B) and the copper layer (C) The peel strength is 0.5 kg/cm or more. 一種由銅/鎳/銅構成之複合銅箔之製造方法,於厚度為10~150μm之壓延銅箔或電解銅箔(A)之兩面或單 面,藉由電鍍形成厚度0.5~3μm之鎳層(B),於鍍敷該鎳層(B)之後,立即藉由電鍍連續地形成厚度為5~20μm之銅層(C),該鎳層(B)與該銅層(C)之間的剝離強度為0.5kg/cm以上。 A method for manufacturing a composite copper foil composed of copper/nickel/copper, on both sides or single sheets of rolled copper foil or electrolytic copper foil (A) having a thickness of 10 to 150 μm a nickel layer (B) having a thickness of 0.5 to 3 μm is formed by electroplating, and immediately after plating the nickel layer (B), a copper layer (C) having a thickness of 5 to 20 μm is continuously formed by electroplating, the nickel layer The peel strength between (B) and the copper layer (C) is 0.5 kg/cm or more. 如申請專利範圍第14至16項中任一項之複合銅箔之製造方法,其中,該複合銅箔被使用於將該壓延銅箔或電解銅箔(A)之至少一部分用作電路的用途。 The method for producing a composite copper foil according to any one of claims 14 to 16, wherein the composite copper foil is used for the use of at least a part of the rolled copper foil or the electrolytic copper foil (A) as a circuit. . 如申請專利範圍第14至16項中任一項之複合銅箔之製造方法,其中,該複合銅箔被使用於將該壓延銅箔或電解銅箔(A)之至少一部分及該銅層(C)之至少一部分用作電路的用途。 The method for producing a composite copper foil according to any one of claims 14 to 16, wherein the composite copper foil is used for at least a part of the rolled copper foil or the electrolytic copper foil (A) and the copper layer ( At least a portion of C) is used for the purpose of the circuit. 如申請專利範圍第12至16項中任一項之複合銅箔之製造方法,其中,於該銅層(C)上形成Cr含量為10~50μg/dm2之防銹層。 The method for producing a composite copper foil according to any one of claims 12 to 16, wherein a rust-preventing layer having a Cr content of 10 to 50 μg/dm 2 is formed on the copper layer (C). 如申請專利範圍第17項之複合銅箔之製造方法,其中,於該銅層(C)上形成Cr含量為10~50μg/dm2之防銹層。 The method for producing a composite copper foil according to claim 17, wherein a rust-preventing layer having a Cr content of 10 to 50 μg/dm 2 is formed on the copper layer (C). 如申請專利範圍第18項之複合銅箔之製造方法,其中,於該銅層(C)上形成Cr含量為10~50μg/dm2之防銹層。 The method for producing a composite copper foil according to claim 18, wherein a rust-preventing layer having a Cr content of 10 to 50 μg/dm 2 is formed on the copper layer (C). 一種印刷配線板之製造方法,其包含如下步驟:準備申請專利範圍第1至8項中任一項之複合銅箔的步驟,及於該複合銅箔之該銅層(C)及該壓延銅箔或電解銅箔 (A)形成電路的步驟。 A manufacturing method of a printed wiring board, comprising the steps of: preparing a composite copper foil according to any one of claims 1 to 8, and the copper layer (C) and the rolled copper of the composite copper foil Foil or electrolytic copper foil (A) The step of forming a circuit. 如申請專利範圍第22項之印刷配線板之製造方法,其包含使用該準備好之複合銅箔來製作覆銅積層板的步驟。 A method of producing a printed wiring board according to claim 22, comprising the step of producing a copper clad laminate using the prepared composite copper foil. 一種印刷配線板之製造方法,其包含如下步驟:準備銅/鎳/銅構成之複合銅箔的步驟,該銅/鎳/銅構成之複合銅箔具備厚度為10~150μm之壓延銅箔或電解銅箔(A)、形成於該箔(A)之兩面或單面且厚度為0.5~3μm之鎳層(B)、形成於該鎳層(B)上且厚度為1~20μm之銅層(C),且無氧化物層介於該鎳層(B)與銅層(C)之間、或是該鎳層(B)與該銅層(C)之間的剝離強度為0.5kg/cm以上;及於該複合銅箔之該銅層(C)及該壓延銅箔或電解銅箔(A)形成電路的步驟。 A method for manufacturing a printed wiring board, comprising the steps of: preparing a composite copper foil composed of copper/nickel/copper, the composite copper foil composed of copper/nickel/copper having a rolled copper foil or electrolysis having a thickness of 10 to 150 μm a copper foil (A), a nickel layer (B) formed on both sides or a single side of the foil (A) and having a thickness of 0.5 to 3 μm, and a copper layer formed on the nickel layer (B) and having a thickness of 1 to 20 μm ( C), and the oxide-free layer is between the nickel layer (B) and the copper layer (C), or the peel strength between the nickel layer (B) and the copper layer (C) is 0.5 kg/cm And the step of forming a circuit on the copper layer (C) of the composite copper foil and the rolled copper foil or the electrolytic copper foil (A). 如申請專利範圍第24項之印刷配線板之製造方法,其包含使用該銅/鎳/銅構成之複合銅箔來製作覆銅積層板的步驟。 A method of producing a printed wiring board according to claim 24, comprising the step of producing a copper clad laminate using the composite copper foil made of the copper/nickel/copper.
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JP4748519B2 (en) * 2002-10-31 2011-08-17 古河電気工業株式会社 Ultra thin copper foil with carrier, manufacturing method thereof, printed wiring board using ultra thin copper foil with carrier
JP2005260250A (en) * 2005-03-23 2005-09-22 Mitsui Mining & Smelting Co Ltd Surface treatment copper foil and copper clad laminate using it
JP5024930B2 (en) * 2006-10-31 2012-09-12 三井金属鉱業株式会社 Surface-treated copper foil, surface-treated copper foil with ultra-thin primer resin layer, method for producing the surface-treated copper foil, and method for producing surface-treated copper foil with an ultra-thin primer resin layer
KR101298999B1 (en) * 2009-09-01 2013-08-23 일진머티리얼즈 주식회사 Embedded Copper foil for fine pattern

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