TWI514624B - - Google Patents

Info

Publication number
TWI514624B
TWI514624B TW102115885A TW102115885A TWI514624B TW I514624 B TWI514624 B TW I514624B TW 102115885 A TW102115885 A TW 102115885A TW 102115885 A TW102115885 A TW 102115885A TW I514624 B TWI514624 B TW I514624B
Authority
TW
Taiwan
Application number
TW102115885A
Other languages
Chinese (zh)
Other versions
TW201444118A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW102115885A priority Critical patent/TW201444118A/zh
Publication of TW201444118A publication Critical patent/TW201444118A/zh
Application granted granted Critical
Publication of TWI514624B publication Critical patent/TWI514624B/zh

Links

TW102115885A 2013-05-03 2013-05-03 具有氮化鎵磊晶層的藍寶石基板的回收方法 TW201444118A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102115885A TW201444118A (zh) 2013-05-03 2013-05-03 具有氮化鎵磊晶層的藍寶石基板的回收方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102115885A TW201444118A (zh) 2013-05-03 2013-05-03 具有氮化鎵磊晶層的藍寶石基板的回收方法

Publications (2)

Publication Number Publication Date
TW201444118A TW201444118A (zh) 2014-11-16
TWI514624B true TWI514624B (fr) 2015-12-21

Family

ID=52423434

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102115885A TW201444118A (zh) 2013-05-03 2013-05-03 具有氮化鎵磊晶層的藍寶石基板的回收方法

Country Status (1)

Country Link
TW (1) TW201444118A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741911B (zh) * 2020-12-16 2021-10-01 環球晶圓股份有限公司 磊晶層去除方法
CN114577659B (zh) * 2022-01-26 2024-02-06 株洲科能新材料股份有限公司 一种氮化镓物料中镓含量的检测方法
CN115101636B (zh) * 2022-08-24 2022-12-02 江苏第三代半导体研究院有限公司 复合微纳米半导体粉体结构、其制备方法及应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI304363B (fr) * 2006-12-18 2008-12-21
TWI305734B (fr) * 2006-09-01 2009-02-01
TWI334165B (en) * 2006-03-14 2010-12-01 Soitec Silicon On Insulator Method for manufacturing compound material wafers and method for recycling a used donor substrate
TW201213551A (en) * 2010-09-28 2012-04-01 Au Optronics Corp Method for recycling indium tin oxide thin film and method for recycling a substrate
KR20120120914A (ko) * 2012-07-31 2012-11-02 주식회사 세미콘라이트 3족 질화물 반도체 증착용 기판의 재생 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI334165B (en) * 2006-03-14 2010-12-01 Soitec Silicon On Insulator Method for manufacturing compound material wafers and method for recycling a used donor substrate
TWI305734B (fr) * 2006-09-01 2009-02-01
TWI304363B (fr) * 2006-12-18 2008-12-21
TW201213551A (en) * 2010-09-28 2012-04-01 Au Optronics Corp Method for recycling indium tin oxide thin film and method for recycling a substrate
KR20120120914A (ko) * 2012-07-31 2012-11-02 주식회사 세미콘라이트 3족 질화물 반도체 증착용 기판의 재생 방법

Also Published As

Publication number Publication date
TW201444118A (zh) 2014-11-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees