TWI514495B - - Google Patents

Info

Publication number
TWI514495B
TWI514495B TW102140589A TW102140589A TWI514495B TW I514495 B TWI514495 B TW I514495B TW 102140589 A TW102140589 A TW 102140589A TW 102140589 A TW102140589 A TW 102140589A TW I514495 B TWI514495 B TW I514495B
Authority
TW
Taiwan
Application number
TW102140589A
Other versions
TW201505113A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201505113A publication Critical patent/TW201505113A/zh
Application granted granted Critical
Publication of TWI514495B publication Critical patent/TWI514495B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
TW102140589A 2013-07-17 2013-11-07 測量反應腔室內薄膜溫度的方法 TW201505113A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310302419.8A CN103411684B (zh) 2013-07-17 2013-07-17 测量反应腔室内薄膜温度的方法

Publications (2)

Publication Number Publication Date
TW201505113A TW201505113A (zh) 2015-02-01
TWI514495B true TWI514495B (zh) 2015-12-21

Family

ID=49604711

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140589A TW201505113A (zh) 2013-07-17 2013-11-07 測量反應腔室內薄膜溫度的方法

Country Status (4)

Country Link
US (1) US9696209B2 (zh)
KR (1) KR101573055B1 (zh)
CN (1) CN103411684B (zh)
TW (1) TW201505113A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103389170B (zh) * 2012-05-07 2015-08-19 中微半导体设备(上海)有限公司 一种真空处理装置的基片温度测量方法和装置
CN104697645B (zh) * 2013-12-05 2017-11-03 北京智朗芯光科技有限公司 一种在线实时检测外延片温度的装置及方法
CN104701200B (zh) * 2013-12-05 2018-01-16 北京智朗芯光科技有限公司 一种在线实时检测外延片温度的装置
CN104697643B (zh) * 2013-12-05 2018-06-26 北京智朗芯光科技有限公司 一种在线实时检测外延片温度的方法
CN104697637B (zh) * 2013-12-06 2018-12-07 北京智朗芯光科技有限公司 一种薄膜生长的实时测温方法
CN104697639B (zh) * 2013-12-06 2018-12-07 北京智朗芯光科技有限公司 一种mocvd设备实时测温系统自校准装置及方法
CN105333962B (zh) * 2014-06-18 2018-06-22 中微半导体设备(上海)有限公司 一种修正双波段测温误差的温度测量方法及系统
CN105716721B (zh) * 2016-02-22 2018-09-11 国网江苏省电力公司电力科学研究院 一种红外温度检测精度校正方法
CN108344526B (zh) * 2018-02-27 2020-12-11 深圳市元征科技股份有限公司 一种体温监测方法及装置
CN113358231B (zh) * 2020-03-06 2023-09-01 杭州海康威视数字技术股份有限公司 红外测温方法、装置及设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW270225B (zh) * 1993-11-30 1996-02-11 Texas Instruments Inc
US6056434A (en) * 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
US20070020784A1 (en) * 2005-07-05 2007-01-25 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
TWI276189B (en) * 2001-10-30 2007-03-11 Matsushita Electric Ind Co Ltd Temperature measuring method, heat treating method, and semiconductor device manufacturing method

Family Cites Families (11)

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JPS55155218A (en) * 1979-05-22 1980-12-03 Nippon Steel Corp Measuring method of temperature of surface of object in furnace
JPH05346351A (ja) * 1992-06-16 1993-12-27 Tokai Carbon Co Ltd 放射測温装置および放射測温法
JP2002202192A (ja) * 2000-10-24 2002-07-19 Tokyo Electron Ltd 温度測定方法、熱処理装置及び方法、コンピュータプログラム、並びに、放射温度計
JP2003214956A (ja) 2002-01-17 2003-07-30 Toshiba Corp 温度測定方法、温度測定装置、半導体装置の製造方法、及び記憶媒体
JP5006560B2 (ja) 2006-03-27 2012-08-22 大阪瓦斯株式会社 温度検出方法、温度検出装置及び温度検出装置を備えた加熱調理器
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature
JP4217255B2 (ja) * 2006-07-27 2009-01-28 株式会社神戸製鋼所 鋼板の温度測定方法および温度測定装置、ならびに鋼板の温度制御方法
US8282273B2 (en) * 2009-03-24 2012-10-09 K-Space Associates, Inc. Blackbody fitting for temperature determination
KR101127563B1 (ko) 2010-08-18 2012-06-12 주식회사 에프에스티 대면적 고속 검출모듈이 구비된 검사장치
CN102620833B (zh) * 2011-02-01 2014-07-09 田乃良 红外测温方法和红外测温系统
US8506161B2 (en) * 2011-06-21 2013-08-13 Advanced Energy Industries, Inc. Compensation of stray light interference in substrate temperature measurement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW270225B (zh) * 1993-11-30 1996-02-11 Texas Instruments Inc
US6056434A (en) * 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
TWI276189B (en) * 2001-10-30 2007-03-11 Matsushita Electric Ind Co Ltd Temperature measuring method, heat treating method, and semiconductor device manufacturing method
US20070020784A1 (en) * 2005-07-05 2007-01-25 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
TWI302358B (en) * 2005-07-05 2008-10-21 Mattson Tech Inc Method and system for determining optical properties of semiconductor wafers

Also Published As

Publication number Publication date
US9696209B2 (en) 2017-07-04
KR101573055B1 (ko) 2015-11-30
TW201505113A (zh) 2015-02-01
CN103411684A (zh) 2013-11-27
US20150025832A1 (en) 2015-01-22
KR20150009928A (ko) 2015-01-27
CN103411684B (zh) 2016-04-06

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