TWI514440B - - Google Patents

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Publication number
TWI514440B
TWI514440B TW102140585A TW102140585A TWI514440B TW I514440 B TWI514440 B TW I514440B TW 102140585 A TW102140585 A TW 102140585A TW 102140585 A TW102140585 A TW 102140585A TW I514440 B TWI514440 B TW I514440B
Authority
TW
Taiwan
Application number
TW102140585A
Other versions
TW201426814A (zh
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Publication date
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Publication of TW201426814A publication Critical patent/TW201426814A/zh
Application granted granted Critical
Publication of TWI514440B publication Critical patent/TWI514440B/zh

Links

TW102140585A 2012-12-24 2013-11-07 半導體刻蝕裝置及半導體結構的刻蝕方法 TW201426814A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210567793.6A CN103021912B (zh) 2012-12-24 2012-12-24 半导体刻蚀装置及半导体结构的刻蚀方法

Publications (2)

Publication Number Publication Date
TW201426814A TW201426814A (zh) 2014-07-01
TWI514440B true TWI514440B (zh) 2015-12-21

Family

ID=47970365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140585A TW201426814A (zh) 2012-12-24 2013-11-07 半導體刻蝕裝置及半導體結構的刻蝕方法

Country Status (2)

Country Link
CN (1) CN103021912B (zh)
TW (1) TW201426814A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104370268B (zh) * 2013-08-16 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法
CN105197876B (zh) * 2014-06-20 2017-04-05 中芯国际集成电路制造(上海)有限公司 一种半导体器件以及制备方法、电子装置
CN105336563A (zh) * 2014-07-24 2016-02-17 北京北方微电子基地设备工艺研究中心有限责任公司 刻蚀装置及刻蚀方法
CN105655283A (zh) * 2014-11-13 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 高深宽比的浅沟槽隔离刻蚀方法
CN104465336B (zh) * 2014-12-02 2017-05-17 国家纳米科学中心 一种低频bosch深硅刻蚀方法
CN106328472B (zh) * 2015-07-02 2018-11-06 北京北方华创微电子装备有限公司 等离子体产生装置和半导体加工设备
CN107369602B (zh) 2016-05-12 2019-02-19 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN108550541B (zh) * 2018-05-22 2020-09-18 浙江文德风匠科技有限公司 一种硅晶圆刻蚀工艺
CN110890277B (zh) * 2018-09-07 2022-05-10 无锡华润上华科技有限公司 沟槽式金属氧化物半导体肖特基势垒晶体管制备方法

Citations (3)

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TW200812226A (en) * 2006-06-13 2008-03-01 Applied Materials Inc High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
TW201128701A (en) * 2010-02-12 2011-08-16 Advanced Micro Fab Equip Inc Method for plasma etching a silicon-containing insulating layer
TW201136458A (en) * 2010-04-02 2011-10-16 Advanced Micro Fab Equip Inc Switchable radio frequency power source system

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US6253704B1 (en) * 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
US20120302065A1 (en) * 2011-05-26 2012-11-29 Nanya Technology Corporation Pulse-plasma etching method and pulse-plasma etching apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200812226A (en) * 2006-06-13 2008-03-01 Applied Materials Inc High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
TW201128701A (en) * 2010-02-12 2011-08-16 Advanced Micro Fab Equip Inc Method for plasma etching a silicon-containing insulating layer
TW201136458A (en) * 2010-04-02 2011-10-16 Advanced Micro Fab Equip Inc Switchable radio frequency power source system

Also Published As

Publication number Publication date
CN103021912B (zh) 2015-10-07
TW201426814A (zh) 2014-07-01
CN103021912A (zh) 2013-04-03

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