TWI514440B - - Google Patents
Info
- Publication number
- TWI514440B TWI514440B TW102140585A TW102140585A TWI514440B TW I514440 B TWI514440 B TW I514440B TW 102140585 A TW102140585 A TW 102140585A TW 102140585 A TW102140585 A TW 102140585A TW I514440 B TWI514440 B TW I514440B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210567793.6A CN103021912B (zh) | 2012-12-24 | 2012-12-24 | 半导体刻蚀装置及半导体结构的刻蚀方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201426814A TW201426814A (zh) | 2014-07-01 |
TWI514440B true TWI514440B (zh) | 2015-12-21 |
Family
ID=47970365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102140585A TW201426814A (zh) | 2012-12-24 | 2013-11-07 | 半導體刻蝕裝置及半導體結構的刻蝕方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103021912B (zh) |
TW (1) | TW201426814A (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104370268B (zh) * | 2013-08-16 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片刻蚀方法 |
CN105197876B (zh) * | 2014-06-20 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件以及制备方法、电子装置 |
CN105336563A (zh) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀装置及刻蚀方法 |
CN105655283A (zh) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 高深宽比的浅沟槽隔离刻蚀方法 |
CN104465336B (zh) * | 2014-12-02 | 2017-05-17 | 国家纳米科学中心 | 一种低频bosch深硅刻蚀方法 |
CN106328472B (zh) * | 2015-07-02 | 2018-11-06 | 北京北方华创微电子装备有限公司 | 等离子体产生装置和半导体加工设备 |
CN107369602B (zh) | 2016-05-12 | 2019-02-19 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
CN108550541B (zh) * | 2018-05-22 | 2020-09-18 | 浙江文德风匠科技有限公司 | 一种硅晶圆刻蚀工艺 |
CN110890277B (zh) * | 2018-09-07 | 2022-05-10 | 无锡华润上华科技有限公司 | 沟槽式金属氧化物半导体肖特基势垒晶体管制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200812226A (en) * | 2006-06-13 | 2008-03-01 | Applied Materials Inc | High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck |
TW201128701A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Method for plasma etching a silicon-containing insulating layer |
TW201136458A (en) * | 2010-04-02 | 2011-10-16 | Advanced Micro Fab Equip Inc | Switchable radio frequency power source system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6253704B1 (en) * | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US6905626B2 (en) * | 2002-07-24 | 2005-06-14 | Unaxis Usa Inc. | Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma |
US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US20120302065A1 (en) * | 2011-05-26 | 2012-11-29 | Nanya Technology Corporation | Pulse-plasma etching method and pulse-plasma etching apparatus |
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2012
- 2012-12-24 CN CN201210567793.6A patent/CN103021912B/zh active Active
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2013
- 2013-11-07 TW TW102140585A patent/TW201426814A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200812226A (en) * | 2006-06-13 | 2008-03-01 | Applied Materials Inc | High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck |
TW201128701A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Method for plasma etching a silicon-containing insulating layer |
TW201136458A (en) * | 2010-04-02 | 2011-10-16 | Advanced Micro Fab Equip Inc | Switchable radio frequency power source system |
Also Published As
Publication number | Publication date |
---|---|
CN103021912B (zh) | 2015-10-07 |
TW201426814A (zh) | 2014-07-01 |
CN103021912A (zh) | 2013-04-03 |