TWI513055B - 發光二極體封裝元件及其製造方法 - Google Patents
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- 239000010410 layer Substances 0.000 claims description 121
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- 238000005538 encapsulation Methods 0.000 claims description 35
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- 229920006336 epoxy molding compound Polymers 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 3
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Description
本發明涉及一種半導體發光元件及其製造方法,尤其涉及一種發光二極體封裝元件及其製造方法。
發光二極體(Light Emitting Diode,LED)是一種可將電流轉換成特定波長範圍的光電半導體元件。發光二極體以其亮度高、工作電壓低、功耗小、易與積體電路匹配、驅動簡單、壽命長等優點,從而可作為光源而廣泛應用於照明領域。
現有的發光二極體一般在封裝成型後通過切割制程形成單個的封裝元件。成型的封裝結構包括相互間隔的兩金屬電極,設置於電極上的發光二極體晶片及覆蓋所述發光二極體元件的樹脂封裝層。為減小後續切割制程中的阻力,所述電極被預先蝕刻形成一導電片及與該導電片連接的若干連接條,所述連接條之間的寬度小於該導電片的寬度。切割時只需切除部分連接條從而形成單個封裝元件。
然而,由於金屬材質的連接條和樹脂材料的封裝層之間的材料差異較大,在切割制程中切割產生的拉力容易引起封裝層與連接條之間剝裂分離而產生縫隙,導致形成的單個發光二極體封裝元件穩固性較差,進而影響發光二極體封裝元件的使用壽命。故,需進一步改進。
有鑒於此,有必要提供一種穩固性較強的發光二極體封裝元件及該發光二極體封裝元件的製造方法。
一種發光二極體封裝元件,其包括相互間隔的兩電極、夾設於該兩電極之間的絕緣層、設置在所述兩電極上並電性連接所述兩電極的發光二極體晶片、及覆蓋所述發光二極體晶片的封裝層,每一電極包括一導電片及與該導電片連接的至少一連接條,所述連接條的寬度小於所述導電片的寬度,所述連接條的厚度小於所述導電片的厚度,所述連接條的上表面低於所述導電片的上表面,所述發光二極體封裝元件還包括一包覆層包覆所述連接條,所述連接條的上表面與封裝層之間夾設所述包覆層。
一種發光二極體封裝元件的製造方法,包括步驟:預成型相互間隔的兩電極,每一電極包括一導電片及與該導電片連接的至少一連接條,每一連接條的寬度小於所述導電片的寬度,所述兩電極的兩導電片相互間隔形成一間隙;正蝕刻所述連接條的上表面使得所述連接條的厚度小於所述導電片的厚度,所述連接條的上表面低於所述導電片的上表面;利用模具成型一絕緣層夾設於所述兩電極之間的空隙中;利用模具成型一包覆層包覆所述連接條;在所述兩電極上設置一發光二極體晶片,所述發光二極體晶片與所述兩電極形成電性連接;設置一封裝層覆蓋所述發光二極體晶片,所述連接條的上表面與封裝層之間夾設所述包覆層;以及沿所述連接條的位置縱向切割部分封裝層、包覆層及連接條形成單個的發光二極體封裝元件。
與習知技術相比,本發明提供的發光二極體封裝元件的連接條與封裝層之間夾設有包覆層,所述包覆層促使包覆層和封裝層之間的密合度、及包覆層與連接條之間的密合度均得到增強,因此在切割形成單個的發光二極體元件時,切割產生的拉力不足以剝裂分離封裝層和包覆層、包覆層和連接條,從而增強發光二極體封裝元件的穩固性,進而延長發光二極體封裝元件的使用壽命。
100‧‧‧發光二極體封裝元件
10‧‧‧電極
20‧‧‧絕緣層
30‧‧‧包覆層
40‧‧‧發光二極體晶片
50‧‧‧封裝層
11‧‧‧導電片
12、12a‧‧‧連接條
111、121、32、121a‧‧‧上表面
112、122、33、122a‧‧‧下表面
123、31、51‧‧‧豎直端面
13‧‧‧間隙
52‧‧‧出光面
A‧‧‧寬度方向
B‧‧‧長度方向
C‧‧‧厚度方向
圖1為本發明一實施方式提供的預成型的兩電極的俯視圖。
圖2為由圖1所示兩電極製成的發光二極體封裝元件的剖面示意圖。
圖3至圖8為圖2所述發光二極體封裝元件的製造步驟示意圖。
請參閱圖1和圖2,為本發明發光二極體封裝元件100的一較佳實施例,該發光二極體封裝元件100包括相互間隔的兩電極10、夾設於兩電極10之間的絕緣層20、環繞該兩電極10的包覆層30、設置在其中一電極10上的發光二極體晶片40及覆蓋該發光二極體晶片40的封裝層50。
具體的,該兩電極10為金屬材質。本實施例中,該兩電極10由銅(Cu)製成。每一電極10包括一導電片11及與該導電片11連接的若干連接條12。本實施例中,所述若干連接條12與該導電片11一體成型。
該導電片11具有一上表面111和與該上表面111相對的下表面112。本實施例中,該導電片11為矩形結構。所述兩電極10的兩導電片11相互間隔形成間隙13,用以後續填充絕緣材料形成所述絕緣層20。所述兩導電片11相互靠近的側面均為平整的表面。
每一電極10的連接條12自該導電片11的外側面延伸而出。圖2所示的實施例中,連接條12自該導電片11的外側面的中部延伸而出。該連接條12的厚度小於該導電片11的厚度,即該連接條12的上表面121低於對應導電片11的上表面111,所述連接條12的下表面122高於對應導電片11的下表面112,由於連接條12的厚度變小,使得後續切割連接條12更加容易,在提升切割效率的同時也進一步保護切割器具。優選的,本實施例中,每一連接條12的厚度等於該導電片11厚度的一半。該連接條12的寬度小於其對應導電片11側面的尺寸。本實施例中,每一導電片11遠離另一導電片11的側面設置連接條12的數量為兩個,該側面平行於發光二極體封裝元件100的寬度方向A。每一導電片11平行於發光二極體封裝元件100的長度方向B的兩側面分別設置一個連接條12。
所述絕緣層20位於兩電極10的兩個導電片11之間。該絕緣層20的上下表面與每一導電片11的上表面111、下表面112對應齊平。所述絕緣層20由熱性環氧樹脂(Epoxy Molding Compound, EMC)或者塑膠材料製成。
所述包覆層30包覆所述兩電極10。具體的,該包覆層30環繞該兩導電片11並包覆該若干連接條12,同時填充滿該導電片11和連接條12之間的區域。該包覆層30邊緣的豎直端面31與所述若干連接條12自由端的豎直端面123齊平。該包覆層30的上表面32與所述導電片11的上表面111齊平,該包覆層30的下表面33與所述導電片11的下表面112齊平,使得每一連接條12在所述發光二極體封裝元件厚度方向C上被該包覆層30包覆,避免在後續的切割制程中產生在所述發光二極體封裝元件厚度方向C上突出導電片11下表面112所在平面的毛邊。本實施例中,該包覆層30和所述絕緣層20通過模具一體成型,即該包覆層30與所述絕緣層20材質相同,該包覆層30也由熱性環氧樹脂(Epoxy Molding Compound, EMC)或者塑膠材料製成。可以理解的,所述包覆層30也可與所述絕緣層20分別單獨形成。可以理解的,所述包覆層30也可只包覆所述連接條12,而不填充滿該導電片11和連接條12之間的區域。
所述發光二極體晶片40設置於其中一電極10上並位於靠近另一電極10的端部。具體的,該發光二極體晶片40位於其中一電極10的導電片11上並位於靠近另一電極10導電片11的一端。該發光二極體晶片40通過打線的方式與所述兩電極10形成電性連接。可以理解的,其他實施例中,該發光二極體晶片40也可通過覆晶(flip-chip)的方式與所述兩電極10形成電性連接。
該封裝層50覆蓋在該發光二極體晶片40上並覆蓋整個包覆層30。也即所述封裝層50的豎直端面51與所述包覆層30豎直端面齊平。該封裝層50遠離發光二極體晶片40一側的表面形成一出光面52,所述發光二極體晶片40所發出的光線進入該封裝層50後經該出光面52出射。該封裝層50由透明膠體制成,也即該封裝層50與該包覆層30的材質不同。可以理解的,該封裝層50中可摻雜有螢光粉,該螢光粉可為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化物基螢光粉和氮化物基螢光粉中的一種或多種。
與習知技術相比,本發明提供的發光二極體封裝元件100包括包覆電極10連接條12的包覆層30,該連接條12在所述發光二極體封裝元件厚度方向C上被所述包覆層30包覆。由於包覆層30與封裝層50的材料差異、包覆層30與連接條12之間的材料差異均小於封裝層50與連接條12之間的材料差異,促使包覆層30和封裝層50之間的密合度、及包覆層30與連接條12之間的密合度均得到增強,因此在切割形成單個的發光二極體封裝元件100時,切割產生的拉力不足以剝裂分離封裝層50和包覆層30、包覆層30和連接條12,從而大大增強發光二極體封裝元件100元件的穩固性,進而延長發光二極體封裝元件100的使用壽命。
下面以上述實施例的發光二極體封裝元件100為例,結合圖3至圖8說明該發光二極體封裝元件100的製造過程。
第一步驟:請參閱圖3,提供預成型且相互間隔的兩電極10,每一電極10包括一導電片11及與該導電片11連接的若干連接條12a。本實施例中,該連接條12與該導電片11一體成型。該兩電極10為金屬材質,本實施例中,該兩電極10由銅(Cu)製成。所述兩電極10的兩導電片11相互間隔形成間隙13,用以後續填充絕緣材料形成所述絕緣層20。所述兩導電片11相互靠近的側面均為平整的表面。
該導電片11均為矩形,每一導電片11具有一上表面111和與該上表面111相對的下表面112。每一電極10的連接條12a均自該導電片11的外側面延伸而出,每一連接條12a的寬度均小於其對應導電片11側面的尺寸。此時每一連接條12a的厚度均與其對應導電片11的厚度相等,也即該連接條12a的上表面121a與該導電片11的上表面111齊平,該連接條12a的下表面122a與該導電片11的下表面112齊平。該導電片11均為矩形。本實施例中,每一導電片11遠離另一導電片11的側面設置連接條12的數量為兩個,該側面平行於發光二極體封裝元件100的寬度方向A。每一導電片11平行於發光二極體封裝元件100長度方向B的兩側面分別設置一個連接條12。
第二步驟:請參閱圖4,沿連接條12a的厚度方向C蝕刻每一連接條12a以減小每一連接條12a的厚度形成所述連接條12。具體的,同時採用正蝕刻和背蝕刻來蝕刻每一連接條12a,使得形成的每一連接條12的厚度小於其對應導電片11的厚度,也即每一連接條12的上表面121低於所述導電片11的上表面111,每一連接條12的下表面122高於所述導電片11的下表面112。優選的,本實施例中,蝕刻後的連接條12的厚度等於該導電片11厚度的一半。
第三步驟:請參閱圖5,成型所述絕緣層20夾設於所述兩電極10之間的間隙13中,並一體成型所述包覆層30包覆所述兩電極10。具體的,利用模具一體成型該絕緣層20和包覆層30。該絕緣層20的上表面、下表面和所述兩導電片11的上表面111、下表面112齊平。所述包覆層30環繞該兩導電片11並包覆該若干連接條12,同時填充該導電片11和連接條12之間的區域。該包覆層30邊緣的豎直端面31與所述若干連接條12自由端的豎直端面123齊平。該包覆層30的上表面32與所述導電片11的上表面111齊平,該包覆層30的下表面33與所述導電片11的下表面112齊平。所述絕緣層20與包覆層30由熱性環氧樹脂(Epoxy Molding Compound, EMC)或者塑膠材料製成。
第四步驟:請參閱圖6,在其中一電極10靠近另一電極10的一端設置所述發光二極體晶片40並通過打線的方式與所述兩電極10形成電性連接。可以理解的,其他實施例中,該發光二極體晶片40也可通過覆晶(flip-chip)的方式與所述兩電極10形成電性連接。
第五步驟:請參閱圖7,設置一封裝層50覆蓋所述發光二極體晶片40和所述包覆層30。該封裝層50由透明膠體制成,也即該封裝層50與該包覆層30的材質不同。可以理解的,該封裝層50中可摻雜有螢光粉,該螢光粉可為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化物基螢光粉和氮化物基螢光粉中的一種或多種。
第六步驟:請參閱圖8,切割成型後的封裝結構形成單個的發光二極體封裝元件100。具體的,沿所述連接條12所在的位置沿所述成型的封裝結構的厚度方向切割移除部分封裝層50、包覆層30和連接條12,從而形成所述發光二極體封裝元件100。所述封裝層50的豎直端面51與所述包覆層30的豎直端面31齊平。由於該連接條12在所述發光二極體封裝元件厚度方向C上被所述包覆層30包覆,而包覆層30與封裝層50的材料差異、包覆層30與連接條12之間的材料差異均小於封裝層50與連接條12之間的材料差異,促使包覆層30和封裝層50之間的密合度、及包覆層30與連接條12之間的密合度均得到增強,因此在切割形成單個的發光二極體封裝元件100時,切割產生的拉力不足以剝裂分離封裝層50和包覆層30、包覆層30和連接條12,從而大大增強發光二極體封裝元件100元件的穩固性,進而延長發光二極體封裝元件100的使用壽命。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限製本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
無
100‧‧‧發光二極體封裝元件
10‧‧‧電極
20‧‧‧絕緣層
30‧‧‧包覆層
40‧‧‧發光二極體晶片
50‧‧‧封裝層
11‧‧‧導電片
12‧‧‧連接條
111、121、32‧‧‧上表面
112、122、33‧‧‧下表面
123、31、51‧‧‧豎直端面
52‧‧‧出光面
C‧‧‧厚度方向
Claims (10)
- 一種發光二極體封裝元件,其包括相互間隔的兩電極、夾設於該兩電極之間的絕緣層、設置在所述兩電極上並電性連接所述兩電極的發光二極體晶片,及覆蓋所述發光二極體晶片的封裝層,每一電極包括一導電片及與該導電片連接的至少一連接條,所述連接條的寬度小於所述導電片的寬度,其改良在於:所述連接條的厚度小於所述導電片的厚度,所述連接條的上表面低於所述導電片的上表面,該發光二極體封裝元件還包括一包覆層包覆所述連接條,所述連接條的上表面與封裝層之間夾設所述包覆層。
- 如申請專利範圍第1項所述之發光二極體封裝元件,其中,所述包覆層與所述封裝層材質不同。
- 如申請專利範圍第2項所述之發光二極體封裝元件,其中,所述封裝層由透明膠體制成,所述包覆層由熱性環氧樹脂或者塑膠材料製成,所述絕緣層與所述包覆層一體成型,且材質相同。
- 如申請專利範圍第2項所述之發光二極體封裝元件,其中,所述連接條自所述導電片的外側面一體延伸形成,所述包覆層的上表面與所述導電片的上表面齊平。
- 如申請專利範圍第4項所述之發光二極體封裝元件,其中,所述連接條的下表面高於所述導電片的底面,所述包覆層的下表面與所述導電片的下表面齊平。
- 如申請專利範圍第4項所述之發光二極體封裝元件,其中,所述連接條的厚度為所述導電片厚度的一半,所述包覆層填充滿所述連接條與導電片之間的區域,所述封裝層的豎直端面與所述包覆層的豎直端面齊平。
- 一種發光二極體封裝元件的製造方法,包括步驟:
預成型相互間隔的兩電極,每一電極包括一導電片及與該導電片連接的至少一連接條,每一連接條的寬度小於所述導電片的寬度,所述兩電極的兩導電片相互間隔形成一間隙;
正蝕刻所述連接條的上表面使得所述連接條的厚度小於所述導電片的厚度,所述連接條的上表面低於所述導電片的上表面;
利用模具成型一絕緣層夾設於所述兩電極之間的空隙中;
利用模具成型一包覆層包覆所述連接條;
在所述兩電極上設置一發光二極體晶片,所述發光二極體晶片與所述兩電極形成電性連接;
設置一封裝層覆蓋所述發光二極體晶片,所述連接條的上表面與封裝層之間夾設所述包覆層;以及
沿所述連接條的位置縱向切割部分封裝層、包覆層及連接條形成單個的發光二極體封裝元件。 - 如申請專利範圍第7項所述之發光二極體封裝元件的製造方法,其中,所述包覆層與所述封裝層材質不同,所述封裝層由透明膠體制成,所述包覆層由熱性環氧樹脂或者塑膠材料製成,所述絕緣層與所述包覆層一體成型,且材質相同。
- 如申請專利範圍第8項所述之發光二極體封裝元件的製造方法,其中,所述包覆層的上表面與所述導電片的上表面齊平,還包括蝕刻所述連接條下表面的步驟,使得所述連接條的下表面高於所述導電片的底面,所述包覆層的下表面與所述導電片的下表面齊平,所述連接條的厚度為所述導電片厚度的一半,所述包覆層填充滿所述連接條與導電片之間的區域,所述封裝層的豎直端面與所述包覆層的豎直端面齊平。
- 如申請專利範圍第8項所述之發光二極體封裝元件的製造方法,其中,所述絕緣層的上表面與所述導電片的上表面齊平,所述絕緣層的的下表面與所述導電片的下表面齊平,所述發光二極體晶片設置在其中一電極的導電片上並位於靠近另一電極導電片的一端。
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US20080017972A1 (en) * | 2006-07-21 | 2008-01-24 | Infineon Technologies Ag | Electronic circuit in a package-in-package configuration and production method |
US20120091487A1 (en) * | 2010-10-15 | 2012-04-19 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package and method for manufacturing the same |
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