TWI512870B - A gripping device and method for a craft piece - Google Patents

Description

De-grip device and method for process parts

The present invention relates to a processing system including an electrostatic chuck, and more particularly to a plasma processing system.

In the field of semiconductor fabrication, semiconductor process components require a series of processing in a semiconductor processing system to form a predetermined structure, such as a plasma etching machine or a plasma chemical vapor deposition machine. In order to meet the process requirements, not only the process control process needs to be strictly controlled, but also the loading and un-clamping of the semiconductor process parts. Loading and unclamping of semiconductor process components is a critical step in the processing of semiconductor process components.

Figure 1 illustrates a prior art plasma etch station that uses only a lift ejector pin to grip a process piece from an electrostatic chuck. Specifically, in the plasma etching machine 100, the substrate 101 is processed by the plasma 104. As shown in FIG. 1, after the processing is completed, the lift ejector pin 103 is pushed out by the driving device (not shown) and over the electrostatic chuck 102, and then the substrate 101 is lifted from the electrostatic chuck 102 to complete The process of removing the substrate from the electrostatic chuck.

The prior art only uses the lifting ejector to remove the substrate from the electrostatic chuck, which may cause irreversible damage to the substrate. It is well known that since the substrate is processed by plasma, an electric charge is present on the substrate, particularly on the bottom surface of the substrate, after the substrate is processed. The prior art has disclosed a procedure for discharging the charge on the substrate, and in an ideal state, the substrate can be unclamped after the discharge pattern is applied to the substrate. However, as the mechanism ages, there is still a potential for residual charge on the substrate after the substrate is discharged.

As shown in FIG. 1, the substrate bottom surface 101a usually still has a residual charge which causes the substrate to draw a lower suction force from the static electricity between the electrostatic chuck 102 to suck the substrate onto the electrostatic chuck. . Due to the limited number of lifting thimbles, it does not evenly act on the entire back of the substrate. Therefore, in some areas of the substrate where there is no lift ejector contact, the downward suction is greater than the upward thrust of the lift ejector pin, and in other parts of the substrate due to the direct contact of the lift ejector pin, the lift of the lift ejector pin is greater than With a downward suction, the cymbal will be damaged due to local distortion. Moreover, since the thrust of the lift ejector pin is a transient force, its sudden action on the substrate may cause the substrate to suddenly eject away from the electrostatic chuck, which may cause the substrate to be damaged by the elastic force. Further, due to the limited space of the plasma processing system, the above-mentioned de-clamping mechanism only takes a limited number of lifting ejector pins, and in practice, one or more of the limited lifting thimbles may be lifted due to aging of the mechanism. Incomplete or delayed or even impossible to lift, which may further cause the substrate to be tilted or lifted incompletely, causing damage to the substrate and the plasma processing substrate.

Accordingly, there is a need in the art for a de-clamping mechanism that is capable of reliably and stably holding a substrate from an electrostatic chuck, and the present invention is based on this.

In view of the above problems in the background art, the present invention proposes a method and apparatus for removing a process member.

According to a first aspect of the present invention, there is provided a method for detaching a process member from an electrostatic chuck in a processing system including an electrostatic chuck, comprising: step a. lifting the lift device The lifting device is in contact with the bottom surface of the process member to apply a first lifting force to the process member; and step b. providing a gas pressure between the bottom surface of the process member and the electrostatic chuck to The process member applies a second lift force, wherein, during a period of time T, the first lift force and the second lift force simultaneously act on the process piece, the first lift force and The second lift force cooperates to separate the process piece from the electrostatic chuck.

According to a second aspect of the present invention, there is provided a de-grip device for gripping a process member from an electrostatic chuck in a processing system including an electrostatic chuck, wherein: a lift device movably Provided under the process member; a gas supply device disposed under the process member; a lifting device coupled to the lift device and lifting the lift device such that the lift device contacts the process a bottom surface of the piece to apply a first lifting force to the process piece; a pneumatic control device coupled to the gas supply device and providing a gas pressure between the bottom surface of the process piece and the electrostatic chuck to The process member applies a second lift force; and a control device that connects and controls the lift device and the air pressure control device to control the first lift force and the second lift force during a time period T Cooperating internally with the process member, the first lift force and the second lift force cooperate to separate the process member from the electrostatic chuck.

According to a third aspect of the invention there is provided a processing system comprising an electrostatic chuck, characterized in that said processing system comprises the aforementioned de-clamping means.

The present invention will simultaneously apply to the process member in combination with a lift ejector pin and air pressure control, wherein the thrust generated by the lift ejector pin is stable and easy to control, and the thrust generated by the air pressure control can uniformly act on the bottom surface of the substrate. Thereby, the de-clamping mechanism of the present invention is more effective and reliable.

A first aspect of the present invention provides a method of removing a process member, which is specifically as follows.

2 shows a schematic diagram of a plasma processing system in accordance with an embodiment of the present invention, wherein the plasma processing apparatus 200 is typically a plasma etching machine that further includes an upper electrode, a lower electrode, Processing chambers, RF power supplies, matching circuits, etc., those skilled in the art will appreciate that there are alternatives in the prior art that have been used in the above-described components, and that can be used in the present invention to achieve its intended function, for simplicity See, no longer repeat them one by one. Further, the plasma etching machine further includes an electrostatic chuck 202, a lifting device 203, and a gas supply device 205 in a base (not shown). The electrostatic chuck 202 is used to secure a substrate 201 in a plasma etching machine, and the lifting device 203 and the air supply device 205 are used to clamp the substrate 201 from the electrostatic chuck 202.

3 is a flow chart showing the steps of the substrate de-clamping method according to an embodiment of the present invention. The de-clamping method of a process sheet provided by the present invention will be described below with reference to FIG. 3 and FIG. ,details as follows.

As shown in FIG. 3, step S2 is first performed, after the semiconductor process member is etched by the plasma, the lift device is lifted so that the lift device contacts the bottom surface of the process member to apply the first lift force to The substrate.

Further, the lifting device includes one or more lifting thimbles, wherein the step S2 further comprises the steps of: lifting one or more lifting thimbles beyond the upper surface of the electrostatic chuck to upward A first lift is applied to the process piece (the process piece is in particular a substrate). Further, the lift ejector is located in the electrostatic chuck.

According to a preferred embodiment of the invention, the lifting device 203 comprises one or more lifting thimbles and at least one lifting lever, wherein the bottom end of the lifting thimble is intimately connected to the lifting lever. Wherein, in the present embodiment, the lift ejector pin and the lift lever are in particular made of a conductor material or a semiconductor material (the lift ejector pin and the lift lever may also be insulating materials). 4a and 4b are schematic views of a lifting device according to an embodiment of the present invention, as shown in Figs. 4a and 4b. In the present embodiment, the lifting device 203 includes three lifting ejector pins, respectively A lift ejector pin 203a1, a second lift ejector pin 203a2, and a third lift ejector pin 203a3 are respectively closely connected to the lift lever 203b. It should be noted that the number of lifting thimbles can be set as needed in actual operation, and is not limited to the embodiment.

Specifically, as shown in Figures 4a and 4b, first the drive means 206 drives the lift lever 203b such that the lift lever 203b is vertically moved by the horizontal line d1 to the horizontal line d2, wherein the distance between the d1 and d2 For d. Since the lift lever 203b is tightly coupled to the first lift ejector pin 201a1, the second lift ejector pin 201a2, and the third lift ejector pin 201a3, the lift ejector pins 201a1, 201a2, and 201a3 are also vertically moved by the distance. d. Thereby, the lifting ejector pins 201a1, 201a2 and 201a3 are lifted beyond the distance d of the electrostatic chuck 202, and the first top end 201a1', the second top end 201a2' and the third top end 201a3' are lifted to the bottom surface 201a of the cymbal sheet The first contact force is applied in close contact with the substrate 201.

It should be noted that the lifting ejector pin is not necessary in the electrostatic chuck, and the setting position thereof can be adjusted according to actual operation requirements, which is not limited to the embodiment.

Step S3 is then performed, in which a gas pressure is applied between the process member and the electrostatic chuck to apply a second lift force to the process member.

Further, the step S3 further includes the step of: inserting a gas into the bottom surface of the process member and the electrostatic chuck by introducing a gas into a gas injection hole disposed between the bottom surface of the process member and disposed between the electrostatic chucks. An air pressure is provided to apply an upward second lifting force to the process piece. Further, the gas injection hole is located in the electrostatic chuck.

According to a preferred embodiment of the present invention, the plasma etching machine further includes a gas supply device 205 including one or more sub-tubes and at least one manifold, and the one or more self-tubes are respectively summarized to The main pipe is closely connected to the main pipe. 5 is a schematic view of a gas supply device according to an embodiment of the present invention. As shown in FIG. 5, in the present embodiment, the gas supply device 205 includes four sub-tubes, respectively a first sub-tube 205b1. The second sub-tube 205b2, the third sub-tube 205b3, and the fourth sub-tube 205b4 are respectively closely connected to the main pipe 205a. It should be noted that the number of sub-tubes can be set as needed in actual operation. For example, the uniformity of the air pressure can be selected according to needs, which is not limited to the embodiment.

Specifically, as shown in Fig. 5, gas is first introduced into the air inlet hole 205a', which is typically Helium. The gas passes through the manifold 205a into the four sub-tubes 205b1, 205b2, 205b3, and 205b4, respectively, and is sprayed toward the first gas injection hole 205b1', the second gas injection hole 205b2', the third gas injection hole 205b3', and the fourth gas injection hole 205b4'. Substrate bottom 201a. Since the space between the substrate 201 and the electrostatic chuck 202 is a closed space, the air pressure between the two increases. Since the position of the electrostatic chuck 202 is stationary, the increase in air pressure causes the substrate 201 to be vertically moved upward relative to the electrostatic chuck 202 by a second upward lifting force.

Optionally, the plasma etching apparatus may further include a ventilation device (not shown), and the amount of gas passing through (SCCM, standard-state cubic centimeter per minute) may be preset. ) to produce a given air pressure.

Wherein the first lift force and the second lift force cooperate to separate the substrate 202 from the electrostatic chuck 202, and during the time period T, the first lift force and the The second lift is applied to the substrate 202 at the same time.

Figures 6a-6c respectively illustrate three embodiments of a sequence of implementations of a substrate de-chucking method in accordance with an embodiment of the present invention. As shown in the first embodiment of Fig. 6a, according to a preferred embodiment of the invention, S2 is first executed between times t11 and t31, and then S3 is performed between times t21 and t41. Wherein, in the period T=Δt1=t31-t21, the step S2 and the step S3 are simultaneously performed, that is, the first lift force and the second lift force act on the substrate 202 at the same time.

According to the second embodiment, as shown in Fig. 6b, S3 is first executed between times t12 and t32, and then S2 is performed between times t22 and t42. Wherein, in the period T=Δt2=t32-t22, the step S2 and the step S3 are simultaneously performed, that is, the first lift force and the second lift force simultaneously act on the substrate 202.

According to a third embodiment, as shown in FIG. 6c, S2 and S3 are performed between time t13 and t23, that is, within the time period T=Δt3=t23-t13, the first lift force and the The second lift force acts on the substrate 202 at the same time.

It should be understood that the steps S2 and S3 have no necessary sequence, and the present invention can be implemented as long as the steps S2 and S3 can be simultaneously performed within a certain time, and the specific details thereof should be adjusted accordingly according to actual operation and process requirements.

Specifically, the sum of the first lift force and the second lift force ranges from a sum of the first lift force and the second lift force to be greater than or equal to the process piece just detached from the The force F of the electrostatic chuck is less than or equal to 1.5 times the force F. In other words, that is, the range of the sum of the first lift force and the second lift force enables the process piece to be successfully detached from the electrostatic chuck without damage. The case of the damage includes, but is not limited to, the process piece being broken, flying, bounced, and the like.

In addition, the first lifting force ranges from less than or equal to the force F of the process piece just off the electrostatic chuck, and the second lifting force ranges from less than or equal to The process piece is just separated from the force F of the electrostatic chuck, and the time period T ranges from 1 second to 30 seconds.

Those skilled in the art will appreciate that prior to attempting to remove the substrate from the electrostatic chuck, a primary discharge step is typically performed which is used to release the primary charge from the bottom surface of the substrate to minimize the final de-clamping. The pressure of the steps.

According to a preferred embodiment of the invention, in conjunction with Figures 4a, 4b and Figure 7, said step S2 further comprises sub-steps S21 and S22: first step S21 is performed, in which step S21 is as shown in Figure 4a It is shown that the first lift ejector pin 203a1, the second lift ejector pin 203a2, and the third lift ejector pin 203a3 are simultaneously raised beyond the electrostatic chuck 202 to contact the substrate on the electrostatic chuck 202. Since the lifting device 203 is directly connected to the ground (that is, the ejector pins 203a1, 203a2, and 203a3 are grounded), and the substrate 202 is made of a conductive material, when the lifting device 203 is also made of a conductive material, The substrate 202 can be discharged by the lift pins 203a1, 203a2, and 203a3. Optionally, at least one switching device 208 may be disposed between the lift ejector pin and the ground terminal to control discharge of the substrate 202. Specifically, when the switching device 208 is turned off, the main charge of the substrate 202 is discharged; when the switching device 208 is turned on, the substrate 202 will not discharge to the ground.

Then, the step S22 is performed. In the step S22, as shown in FIG. 4b, the first lifting ejector pin 203a1, the second lifting ejector pin 203a2, and the third lifting ejector pin 203a3 are continuously lifted to apply the first lifting force. To the substrate 202. The specific execution process of the step S22 has been specifically described above, and details are not described herein again.

Figure 8 is a flow chart showing the steps of a substrate de-chucking method in accordance with another embodiment of the present invention. As shown in FIG. 8, optionally, according to a variant of the invention, the discharge step of the main charge of the substrate can also be arranged before steps S2 and S3, that is, before said steps S1 and S2 It also includes the following step S0: discharging the substrate.

Typically, the step S0 further includes the steps of: introducing a gas into the reaction chamber of the plasma etching machine through a showerhead, and turning on a radio frequency power (Radio Frequency power) connected to the upper electrode, so as to be evenly A plasma is generated. It should be noted that the gas is preferably an inert gas because the plasma thus generated will not unnecessarily affect the structure that has been fabricated on the substrate. In this embodiment, the upper electrode is grounded, and since the plasma is electrically conductive, it is capable of conducting charge conduction between the substrate and the upper electrode to cause a main charge on the substrate and the plasma. The body contact causes charge to be introduced into the ground of the processing system through the plasma such that the substrate is discharged through the grounded upper electrode. It should be understood by those skilled in the art that the above-described components are well-established in the prior art, and can be used in the present invention to achieve its intended functions. For the sake of brevity, it will not be repeated.

It should be understood that the above description is directed only to one embodiment of the present invention, based on the manner in which the substrate is brought into contact with the plasma, such that the substrate can be discharged through any other grounded component, for example, through a grounded confinement ring ( Confinement ring).

Typically, as shown in FIG. 2, the plasma etching machine further includes a processing device 209 that is capable of direct communication with the lift device 203 and the gas supply device 205. Further, as shown in FIG. 3, the substrate de-chucking method of the present invention further includes a step Si, the step Si specifically including the steps S1 and S4: first, before the steps S2 and S3, S1 is performed, The lift height d of the substrate 201 is set in advance in the control device 205.

Then, S4 is performed after the steps S2 and S3 to detect whether the substrate has reached the lift height d. Alternatively, a first sensor 207a and a second sensor 207b may be respectively disposed on the first horizontal line d1 and the second horizontal line d2, and the sensors 207a and 207b are used to detect the lifted distance of the lifting device. Wherein, the first horizontal line d1 is typically an initial position of the lift device 203, and the second horizontal line d2 is set to a position that is higher than the lift line height d from the horizontal line d1, in other words, the horizontal lines d1 and d2 The distance between the substrates 202 is preset to the lift height d to be reached. It should be noted that, referring to FIG. 4b, in the embodiment, since the material of the lifting device 203 is a hard material, and the substrate 202 is in close contact with the substrate 202 after being lifted, The lifted device 203 is then lifted to a height equal to the height at which the substrate 202 is lifted. Specifically, first, the processing device 209 controls the driving device 206 to drive the lifting device 203 to start moving, and controls the air supply device 205 to start starting. When the control detects that the lifting device 203 starts moving and leaves the first horizontal line d1, the first sensor 207b transmits a first detection signal to the processing device 209. Then, when the second sensor 207b detects that the lift device 203 has reached the preset second horizontal line d2, it transmits a second detection signal to the processing device 209, and the processing device 209 then determines the substrate 202. The lift height d has been reached, indicating that the lift device 203 and the air supply device 205 stop applying the first lift force and the second lift force to the substrate 202.

Further, the manner in which the sensors 207a and 207b detect the lift height of the substrate detecting the lifting device includes, but is not limited to, photoelectric sensing, infrared, and Bluetooth.

The above embodiment is a preferred embodiment of the present invention. It should be understood that since the substrate is processed in a chamber of a plasma etching machine, the chamber is filled with a reactive gas to generate a plasma pair. In order to avoid affecting the process and preventing the device from being contaminated, the first sensor 207a and the second sensor 207b are disposed under the substrate and are isolated from the chamber. However, the position of the sensor or other means for detecting the lift distance of the substrate is not limited to the embodiment.

Further, the lift height d ranges from 5 mm to 50 mm.

According to a preferred embodiment of the present invention, the step of performing the auxiliary discharge on the residual charge on the substrate is also performed while performing the steps S2 and S3, that is, the plasma is continuously supplied into the processing system to cause the charge on the process member. In contact with the plasma, charge is introduced into the ground of the processing system through the plasma to discharge the charge on the process member. Specifically, gas is continuously supplied to the plasma etching machine reaction chamber through the gas jet head, and the RF power source connected to the upper electrode is turned on, so that plasma can be uniformly generated. The discharge mechanism of the auxiliary discharge step has been described in detail in the foregoing step S0, and will not be further described herein for the sake of brevity.

A second aspect of the invention provides a device for de-clamping. Figure 9 shows a schematic view of a substrate de-clamping device in accordance with an embodiment of the present invention. Referring to Figure 9 in conjunction with Figure 2, the de-clamping device 300 includes a lifting device 301 coupled to a plasma etching machine. Lifting device 304 in table 200 (ie, 203 shown in FIG. 2), and lifting said lifting device 304 such that said lifting device 203 is in contact with bottom surface 201a of said process member to apply a first lift The process member 201; the air pressure control device 302 is connected to the air supply device 305 (ie, 205 shown in FIG. 2) in the plasma etching machine 200, and is disposed on the bottom surface 202a of the process member. Providing a gas pressure between the electrostatic chucks 202 to apply a second lift force to the process member 201; and a control device 303 coupled to the lift device 301 and the air pressure control device 302, and controlling the The first lifting force and the second lifting force cooperate on the process piece 201 in a time period T, the first lifting force and the second lifting force cooperating to the workpiece piece 201 is separated from the electrostatic chuck 202. The de-clamping device 300 further includes a lifting device 304 and a gas supply device 305.

Further, the lifting device 203 includes one or more lifting thimbles that lift the one or more lifting thimbles beyond the electrostatic chuck to apply a first lifting force to the Process parts. As shown in FIG. 2, in the present embodiment, there are typically three lifting ejector pins, which are a first lifting ejector pin 203a1, a second lifting ejector pin 203a2, and a third lifting ejector pin 203a3.

Further, the air supply device 205 includes one or more air injection holes, and the air pressure control device 205 passes the one or more air jets that are directed toward the process member 201 and disposed in the electrostatic chuck 202. A gas is introduced into the hole to provide a gas pressure between the bottom surface 201a of the process member and the electrostatic chuck 202 to apply a second lift force to the process member 201.

In particular, the sum of the first lift force and the second lift force is greater than or equal to a force F that causes the process piece to just detach from the electrostatic chuck, less than or equal to 1.5 times the force F. In other words, that is, the range of the sum of the first lift force and the second lift force enables the process piece to be successfully detached from the electrostatic chuck without damage. The case of the damage includes, but is not limited to, the process piece being broken, flying, bounced, and the like.

In addition, the first lifting force has a value range of less than or equal to a force F that causes the process piece to just detach from the electrostatic chuck; and the second lifting force has a value range of less than or equal to The process piece is just separated from the force F of the electrostatic chuck; the time period T ranges from 1 second to 30 seconds.

Further, the lifting device 301 movably lifts the lifting device 203 beyond the upper surface of the electrostatic chuck 202 to contact the bottom surface 201a of the process member located on the electrostatic chuck 202. Wherein the lifting device is made of a conductive material and is connected to the switching device 208, the switching device 208 is disposed between the lifting device 203 and the ground, such that the process member passes the one or more A lifting thimble is used to discharge.

It should be noted that the details of the specific clamping of the process piece from the classic chuck have been described in detail in the foregoing, and the de-clamping process and the foregoing process performed by the device for removing the clamping provided by the second aspect of the present invention are described. No difference, for the sake of brevity, no longer repeat them.

Moreover, those skilled in the art will appreciate that there have been prior art solutions for the combination of soft, hard and soft and hard bodies for the above-described devices, and both can be used in the present invention to achieve its intended function, for simplicity. For the sake of reference, we will not repeat them one by one.

A third aspect of the invention provides a processing system comprising an electrostatic chuck, the processing system comprising a de-clamping device as described above.

The present invention will simultaneously apply to the process member in combination with a lift ejector pin and air pressure control, wherein the thrust generated by the lift ejector pin is stable and easy to control, and the thrust generated by the air pressure control can uniformly act on the bottom surface of the substrate. Thereby, the de-clamping mechanism of the present invention is more effective and reliable.

In a first embodiment of the invention, the first lift force is 20 psi, the second lift force is 15 torr, the lift height is 3 mm, and the lift time is 0.1 sec.

In the second embodiment of the present invention, the first lift force is 25 psi, the second lift force is 8 torr, the lift height is 8 mm, and the lift time is 0.3 sec.

In a third embodiment of the invention, the first lift is 35 psi, the second lift is 7 torr, the lift height is 11 mm, and the lift time is 0.4 sec.

In a fourth embodiment of the invention, the first lift is 55 psi, the second lift is 5 torr, the lift height is 13 mm, and the lift time is 0.5 sec.

In a fourth embodiment of the invention, the first lift force is 50 psi, the second lift force is 6 torr, the lift height is 12 mm, and the lift time is 0.5 sec.

The various embodiments of the present invention have been described in detail above. It should be noted that the above-described embodiments are merely exemplary and not limiting of the invention. Any technical solution that does not depart from the spirit of the invention should fall within the scope of the invention. In addition, any reference signs in the claims should not be construed as limiting the claims; the word "comprising" does not exclude the means or steps that are not listed in the other claims or the description; "first", " Words such as "two" are used only to denote a name, and do not denote any particular order.

S0, S1, S2, S3, S4, S21, S22. . . step

T11, t21, t31, t41, t12, t22, t32, t42, t13, t23. . . time

d. . . Lift height

D1. . . First horizontal line

D2. . . Second horizontal line

100. . . Plasma etching machine

101. . . Substrate

101a. . . Substrate bottom

102. . . Electrostatic chuck

103. . . Lifting thimble

104. . . plasma

200. . . Plasma processing device

201. . . Substrate

201a. . . Substrate bottom

201a1. . . First lift thimble

201a2. . . Second lift thimble

201a3. . . Third lift thimble

201a1’. . . First top

201a2’. . . Second top

201a3’. . . Third top

202. . . Electrostatic chuck

203. . . Lifting thimble

203a1. . . First lift thimble

203a2. . . Second lift thimble

203a3. . . Third lift thimble

203b. . . Lift lever

204. . . plasma

205. . . Gas supply device

205a. . . General manager

205a’. . . Air inlet

205b1. . . First sub-tube

205b2. . . Second sub-tube

205b3. . . Third sub-tube

205b4. . . Fourth sub-tube

205b1’. . . First jet hole

205b2’. . . Second jet hole

205b3’. . . Third jet hole

205b4’. . . Fourth jet hole

206. . . Drive unit

207a. . . First sensor

207b. . . Second sensor

208. . . Switching device

209. . . Processing device

300. . . Clamping device

301. . . Lifting device

302. . . Air pressure control device

303. . . Control device

304. . . Lifting device

305. . . Gas supply device

1 is a schematic illustration of a prior art plasma etch station wherein the plasma processing system uses only the lift ejector pin 103 to clamp the substrate 101 from the electrostatic chuck.

2 is a schematic diagram of a plasma processing system in accordance with an embodiment of the present invention.

3 is a flow chart showing the steps of a substrate de-chucking method in accordance with an embodiment of the present invention.

4a, 4b are schematic views of a lift device in accordance with an embodiment of the present invention.

Figure 5 is a schematic illustration of a gas supply device in accordance with an embodiment of the present invention.

FIG. 6a is a schematic diagram showing an implementation sequence of a method for removing a substrate according to an embodiment of the present invention, wherein step S3 is performed after step S2 is performed first.

FIG. 6b is a schematic diagram showing an implementation sequence of a method for removing a substrate according to an embodiment of the present invention, wherein step S2 is performed after step S3 is performed first.

Figure 6c is a schematic view showing an implementation sequence of a substrate de-chucking method according to an embodiment of the present invention, in which steps S2 and S3 are simultaneously performed.

Figure 7 is a detailed flow diagram of step S1 of the substrate de-chucking method in accordance with an embodiment of the present invention.

Figure 8 is a flow chart showing the steps of a substrate de-chucking method in accordance with another embodiment of the present invention.

Figure 9 is a schematic illustration of a substrate de-holding device in accordance with an embodiment of the present invention.

S0~S4. . . step

Claims (13)

A method for clamping a process member from an electrostatic chuck in a processing system including an electrostatic chuck, comprising: step a. lifting the lift device such that the lift device contacts a bottom surface of the process member Applying a first lifting force to the process member; and step b. providing a gas pressure between the bottom surface of the process member and the electrostatic chuck to apply a second lift force to the process member; During a period of time T, the first lift force and the second lift force simultaneously act on the process piece, and the first lift force and the second lift force work together to The process member is separated from the electrostatic chuck. The method of claim 1, wherein the lifting device comprises one or more lifting thimbles, wherein the step a further comprises the step of lifting one or more lifting thimbles beyond The upper surface of the electrostatic chuck applies a first lifting force upward to the process member. The method of claim 1, wherein the step b further comprises the step of: - introducing a gas into the gas jet hole facing the bottom surface of the process member and disposed in the electrostatic chuck; An air pressure is provided between the bottom surface of the process member and the electrostatic chuck to apply an upward second lifting force to the process member. The method of claim 1 or 2 or 3, wherein the sum of the first lift force and the second lift force is greater than or equal to causing the process member to just detach from the static electricity. The force F of the chuck is less than or equal to 1.5 times the force F. The method of claim 4, wherein the first lifting force has a value ranging from less than or equal to a force F that causes the process member to just detach from the electrostatic chuck, the second liter The range of force is less than or equal to the force F that causes the process piece to just detach from the electrostatic chuck. The method of claim 1, wherein the time period T ranges from 1 second to 30 seconds. The method of claim 1 or 2, wherein the lifting device comprises one or more lifting thimbles made of a conductor material or a semiconductor material, the processing system further comprising a switching device The switch device is located between the one or more lift pins and the ground end, and the step a further comprises the steps of: a1. lifting the one or more lift pins to exceed the static electricity The upper surface of the chuck contacts the bottom surface of the process member on the electrostatic chuck, and the switching device is switched such that the charge on the process member is discharged through the one or more lift pins to ground; a2. The one or more lift pins are continuously lifted to apply a first lift to the process piece. The method of claim 1, wherein before the step a and the step b, the method further comprises the step of: discharging the electric charge on the process member. The method of claim 8, wherein the step 1 further comprises the steps of: - introducing a plasma into the processing system to bring a charge on the process member into contact with the plasma to cause a charge The charge on the process member is discharged by the plasma being introduced to the ground of the processing system. The method of claim 1, wherein the method further comprises the steps of: step A1. presetting the lift height of the process piece; step A2. detecting whether the process piece has reached the lift height, - If the process member has reached the lift height, the application of the first lift force and the second lift force to the process member is stopped. The method of claim 1, wherein the performing the steps a and b simultaneously comprises the steps of: continuing to pass a plasma into the processing system to cause a charge on the process member to be The plasma is contacted such that charge is introduced into the ground of the processing system through the plasma to discharge the charge on the process member. A de-clamping device for clamping a process member from an electrostatic chuck in a processing system including an electrostatic chuck, comprising: a lifting device movably disposed under the process member; a device disposed under the process member; a lifting device coupled to the lifting device and lifting the lifting device such that the lifting device contacts a bottom surface of the process member to apply a first lift a pressure control device connected to the gas supply device and providing a gas pressure between the bottom surface of the process member and the electrostatic chuck to apply a second lift force to the process member; And a control device that connects and controls the lifting device and the air pressure control device to control the first lift force and the second lift force to cooperate on the process piece during a time period T, The first lift force and the second lift force cooperate to separate the process piece from the electrostatic chuck. A processing system comprising an electrostatic chuck, wherein the processing system comprises a de-clamping device according to item 12 of the patent application.