TWI505480B - Annealing device for a thin-film solar cell - Google Patents
Annealing device for a thin-film solar cell Download PDFInfo
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Description
本發明係關於一種薄膜太陽能電池的退火裝置,尤其關於一種改善薄膜太陽能電池之受熱不均現象的薄膜太陽能電池的退火裝置。The present invention relates to an annealing apparatus for a thin film solar cell, and more particularly to an annealing apparatus for a thin film solar cell which improves the uneven heating of a thin film solar cell.
薄膜太陽能電池中的CIGS(copper indium gallium(di)selenide)是屬於化合物半導體。CIGS屬於多晶薄膜的形式,它是由銅、銦、鎵以及硒所組成的一三五族化合物半導體材料。圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。如圖1A所示,CIGS薄膜太陽能電池10包含一玻璃基板11。於玻璃基板11上依序沉積鉬金屬層12、銅鎵金屬層13、銦金屬層14及硒層15。如圖1B所示,對圖1A步驟的CIGS薄膜太陽能電池10,進行退火(annealing)處理,退火主要是指一種使材料曝露於高溫一段時間後,然後再慢慢冷卻的製程,退火處理後,銅鎵金屬層13、銦金屬層14及硒層15會形成一CIGSe金屬層16。CIGS (copper indium gallium (di) selenide) in a thin film solar cell belongs to a compound semiconductor. CIGS is in the form of a polycrystalline film, which is a group of three or five compound semiconductor materials composed of copper, indium, gallium and selenium. Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. As shown in FIG. 1A, the CIGS thin film solar cell 10 includes a glass substrate 11. A molybdenum metal layer 12, a copper gallium metal layer 13, an indium metal layer 14, and a selenium layer 15 are sequentially deposited on the glass substrate 11. As shown in FIG. 1B, the CIGS thin film solar cell 10 of the step of FIG. 1A is subjected to an annealing treatment, and the annealing mainly refers to a process of exposing the material to a high temperature for a period of time and then slowly cooling, after annealing, The copper gallium metal layer 13, the indium metal layer 14, and the selenium layer 15 form a CIGSe metal layer 16.
圖2A顯示一習知薄膜太陽能電池的退火裝置之外部結構的示意圖。習知薄膜太陽能電池的退火裝置20,包含互相連通的5個退火室21~25、及2個冷卻室31~32。進行退火處理時,從退火裝置20的入口35將圖1A步驟的CIGS薄膜太陽能電池10,送入至退火室21進行預熱,再藉由傳送裝置(未圖示)送至退火室22快速加熱至高溫狀態,例如500℃~600℃。於退火室23及24中使CIGS薄膜太陽能電池10保持在高溫狀態下一段時間。在退火室25中使CIGS薄膜太陽能電池10預先降溫,最後再使CIGS薄膜太陽能電池10於冷卻室31~32中緩慢降溫至低溫狀態後,從出口36送出。2A is a schematic view showing the external structure of an annealing device of a conventional thin film solar cell. The annealing device 20 for a thin film solar cell includes five annealing chambers 21 to 25 and two cooling chambers 31 to 32 that communicate with each other. When the annealing treatment is performed, the CIGS thin film solar cell 10 of the step of FIG. 1A is sent from the inlet 35 of the annealing device 20 to the annealing chamber 21 for preheating, and then sent to the annealing chamber 22 for rapid heating by a transfer device (not shown). To a high temperature state, for example, 500 ° C ~ 600 ° C. The CIGS thin film solar cell 10 is maintained in a high temperature state for a while in the annealing chambers 23 and 24. The CIGS thin film solar cell 10 is previously cooled in the annealing chamber 25, and finally, the CIGS thin film solar cell 10 is gradually cooled to a low temperature state in the cooling chambers 31 to 32, and then sent out from the outlet 36.
圖2B顯示一習知薄膜太陽能電池的退火裝置之各退火室之內部結構的示意圖。如圖2B所示,退火室21中設有一底板26。CIGS薄膜太陽能電池10靜置於底板26上。一加熱器50隔著一石墨板60對CIGS薄膜太陽能電池10進行加熱。2B is a schematic view showing the internal structure of each annealing chamber of an annealing device of a conventional thin film solar cell. As shown in FIG. 2B, a bottom plate 26 is provided in the annealing chamber 21. The CIGS thin film solar cell 10 is placed on the bottom plate 26. A heater 50 heats the CIGS thin film solar cell 10 via a graphite plate 60.
圖3顯示一習知薄膜太陽能電池退火裝置之傳送裝置的示意圖。如圖3所示,習知薄膜太陽能電池退火裝置之傳送裝置40設於退火室21~25的底板26,用以傳送CIGS薄膜太陽能電池10(亦即其玻璃基板11)。習知薄膜太陽能電池退火裝置之傳送裝置40包含至少一滾輪41、至少一推動桿42及至少一抵靠桿43。滾輪41設置於各退火室21~25的底板26,較佳的情況是大部分設於底板26背側,並露出一小部分,此部分突出於底板26,使CIGS薄膜太陽能電池10的玻璃基板11其背面,不接觸於底板26,而能於滾輪41上移動。Figure 3 shows a schematic view of a conventional transfer device for a thin film solar cell annealing apparatus. As shown in FIG. 3, a conventional thin film solar cell annealing apparatus 40 is disposed in the bottom plate 26 of the annealing chambers 21 to 25 for transporting the CIGS thin film solar cell 10 (i.e., its glass substrate 11). The transfer device 40 of the conventional thin film solar cell annealing device includes at least one roller 41, at least one push rod 42 and at least one abutment rod 43. The roller 41 is disposed on the bottom plate 26 of each of the annealing chambers 21 to 25. Preferably, most of the rollers 41 are disposed on the back side of the bottom plate 26, and a small portion is exposed. The portion protrudes from the bottom plate 26 to make the glass substrate of the CIGS thin film solar cell 10. The back surface of the 11 is movable on the roller 41 without contacting the bottom plate 26.
圖3習知例中,採用兩個為圓柱狀的推動桿42,分別位於底板26的左半部及右半部,並且大致不突出於底板26。抵靠桿43設於推動桿42。在傳送裝置40的靜止狀態(未圖示)下,抵靠桿43位於凹槽27內,且呈不突出於底板26的狀態。在傳送裝置40的傳送狀態下,如圖3所示,推動桿42逆時鐘旋轉一預定角度,例如90度,使抵靠桿43突出於底板26。推動桿42往下個退火室移動時,CIGS薄膜太陽能電池10的玻璃基板11會抵靠在抵靠桿43,並隨著推動桿42在滾輪41上移動。當推動桿42及玻璃基板11均移動到下個退火室後,推動桿42再順時鐘旋轉(未圖示),使抵靠桿43處於另一凹槽27內,再次回到不突出於底板26的狀態,推動桿42退回當前退火室後,即完成CIGS薄膜太陽能電池10在各退火室21~25間的傳送操作。In the conventional example of Fig. 3, two cylindrical push rods 42 are used, which are respectively located at the left and right halves of the bottom plate 26, and do not protrude substantially from the bottom plate 26. The abutment lever 43 is provided to the push lever 42. In the stationary state (not shown) of the conveyor 40, the abutment rod 43 is located in the recess 27 and is in a state of not protruding from the bottom plate 26. In the transport state of the transport device 40, as shown in FIG. 3, the push lever 42 is rotated counterclockwise by a predetermined angle, for example, 90 degrees, so that the abutment lever 43 protrudes from the bottom plate 26. As the push rod 42 moves toward the next annealing chamber, the glass substrate 11 of the CIGS thin film solar cell 10 will abut against the abutment rod 43 and move with the push rod 42 on the roller 41. When both the push rod 42 and the glass substrate 11 are moved to the next annealing chamber, the push rod 42 is rotated clockwise (not shown), so that the abutting rod 43 is in the other recess 27, and returns to the bottom plate without protruding. In the state of 26, after the push rod 42 is retracted to the current annealing chamber, the transfer operation of the CIGS thin film solar cell 10 between the annealing chambers 21 to 25 is completed.
然而,習知退火裝置20所形成的CIGS薄膜太陽能電池10a,會因受熱不均勻的現象,而降低了CIGS薄膜太陽能電池10a的品質及良率。因此習知退火裝置20還有進一步改善的空間。However, the CIGS thin film solar cell 10a formed by the conventional annealing device 20 reduces the quality and yield of the CIGS thin film solar cell 10a due to uneven heating. Therefore, the conventional annealing device 20 has room for further improvement.
本發明一實施例之目的在於提供一種改善薄膜太陽能電池之受熱不均現象的薄膜太陽能電池的退火裝置。An object of an embodiment of the present invention is to provide an annealing apparatus for a thin film solar cell which improves the uneven heating of a thin film solar cell.
依據本發明一實施例,薄膜太陽能電池退火裝置包含至少一退火室、一第一加熱器及一傳送裝置。第一加熱器設於退火室內,用以對薄膜太陽能電池加熱。傳送裝置設於退火室內且包含多個滾軸,每一滾軸皆沿著一第一方向排列並朝相同方向旋轉。薄膜太陽能電池的背面接觸該些滾軸,藉以使薄膜太陽能電池於該些滾軸上沿第一方向移動,使得退火室內的薄膜太陽能電池相對第一加熱器移動。According to an embodiment of the invention, a thin film solar cell annealing device includes at least one annealing chamber, a first heater, and a transfer device. The first heater is disposed in the annealing chamber for heating the thin film solar cell. The conveying device is disposed in the annealing chamber and includes a plurality of rollers, each of which is arranged along a first direction and rotates in the same direction. The back side of the thin film solar cell contacts the rollers, so that the thin film solar cell moves in the first direction on the rollers, so that the thin film solar cells in the annealing chamber move relative to the first heater.
一實施例中,第一加熱器包含多個第一加熱管及多個玻璃石英套管(Robax),並使每一第一加熱管之外側分別套上玻璃石英套管,藉以保護該些第一加熱管。於一實施例中,該些第一加熱管位於該些滾軸底側,且不突出於該些滾軸。較佳的情況是該些第一加熱管更位於兩相鄰滾軸間之縫隙的底側。In one embodiment, the first heater comprises a plurality of first heating tubes and a plurality of glass quartz sleeves (Robax), and the outer sides of each of the first heating tubes are respectively covered with a glass quartz sleeve to protect the first A heating tube. In an embodiment, the first heating tubes are located on the bottom sides of the rollers and do not protrude from the rollers. Preferably, the first heating tubes are located further on the bottom side of the gap between two adjacent rollers.
依據本發明一實施例,薄膜太陽能電池退火裝置包含至少一退火室、一加熱器及一傳送裝置。加熱器於該退火室內,且包含多個加熱管用以對薄膜太陽能電池加熱。傳送裝置用以傳送該薄膜太陽能電池。於退火室的操作狀態下,薄膜太陽能電池靜置於退火室,且該些加熱管持續地移動,藉以使該些加熱管相對該薄膜太陽能電池移動。於一實施例中,該些加熱管進行往復運動。According to an embodiment of the invention, a thin film solar cell annealing apparatus includes at least one annealing chamber, a heater, and a transfer device. A heater is disposed within the annealing chamber and includes a plurality of heating tubes for heating the thin film solar cell. A conveyor is used to transport the thin film solar cell. In the operating state of the annealing chamber, the thin film solar cells are placed in the annealing chamber, and the heating tubes are continuously moved to move the heating tubes relative to the thin film solar cells. In one embodiment, the heating tubes reciprocate.
依本發明一實施例,加熱器能夠對薄膜太陽能電池均勻地加熱,因此能夠減少斑點的產生。且於一實施例中,由於傳送裝置能夠連續地驅動薄膜太陽能電池,使其連續地沿第一方向移動,讓薄膜太陽能電池的表面能夠較均勻地受熱,可以改善受熱不均的現象,提升薄膜太陽能電池之品質及良率。According to an embodiment of the present invention, the heater can uniformly heat the thin film solar cell, thereby reducing the generation of spots. In one embodiment, since the transport device can continuously drive the thin film solar cell to continuously move in the first direction, the surface of the thin film solar cell can be heated more uniformly, which can improve the uneven heating phenomenon and enhance the film. The quality and yield of solar cells.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例並配合所附圖式,作詳細說明如下。Other objects and advantages of the present invention will become apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the invention will be apparent from
依據本發明一實施例,主要提供一種薄膜太陽能電池退火裝置,其包含至少一退火室、一加熱器及一傳送裝置。加熱器用以對薄膜太陽能電池加熱且設於退火室內。傳送裝置用以傳送薄膜太陽能電池且設於退火室。於加熱器對薄膜太陽能電池的加熱程序時,退火室內的薄膜太陽能電池與加熱器間形成有相對移動。藉此獨特且新穎的設計,能夠改善利用加熱器對薄膜太陽能電池加熱時所產生之薄膜太陽能電池的受熱不均的現象。以下將更詳細說明本發明的各種實施例,但應了解的是本發明不限定於該些實施例。According to an embodiment of the invention, a thin film solar cell annealing device is provided, which comprises at least one annealing chamber, a heater and a conveying device. The heater is used to heat the thin film solar cell and is disposed in the annealing chamber. The transfer device is configured to transport the thin film solar cell and is disposed in the annealing chamber. When the heater heats the thin film solar cell, a relative movement is formed between the thin film solar cell in the annealing chamber and the heater. With this unique and novel design, it is possible to improve the uneven heating of the thin film solar cells generated by heating the thin film solar cells by the heater. Various embodiments of the invention are described in more detail below, but it should be understood that the invention is not limited to the embodiments.
圖4顯示依本發明一實施例薄膜太陽能電池退火裝置的示意圖。圖5顯示依本發明一實施例薄膜太陽能電池退火裝置之傳送裝置的示意圖。如圖4及5所示,薄膜太陽能電池退火裝置100用以對一CIGS薄膜太陽能電池10進行退火製程,其包含至少一退火室21、一第一加熱器110、及一傳送裝置120。於一實施例中,還可以更包含有一第二加熱器130。於本實施例中,薄膜太陽能電池退火裝置100設有5個退火室21~25(請參照圖2A)。以下以退火室21為例示加以說明,其餘退火室22~25相同於退火室21,因此省略其相關說明。4 is a schematic view showing a thin film solar cell annealing apparatus according to an embodiment of the present invention. Figure 5 is a schematic view showing a conveying apparatus of a thin film solar cell annealing apparatus according to an embodiment of the present invention. As shown in FIGS. 4 and 5, the thin film solar cell annealing apparatus 100 is used for annealing a CIGS thin film solar cell 10, which comprises at least one annealing chamber 21, a first heater 110, and a transfer device 120. In an embodiment, a second heater 130 may be further included. In the present embodiment, the thin film solar cell annealing apparatus 100 is provided with five annealing chambers 21 to 25 (please refer to FIG. 2A). Hereinafter, the annealing chamber 21 will be described as an example, and the remaining annealing chambers 22 to 25 are the same as the annealing chamber 21, and thus the description thereof will be omitted.
傳送裝置120設於退火室21內,用以將CIGS薄膜太陽能電池10傳送至退火室21內,或將其傳送出退火室21外。傳送裝置120包含多個滾軸121,每一滾軸121皆沿著一第一方向71排列並朝相同方向旋轉,例如皆朝逆時針方向旋轉。薄膜太陽能電池10的背面接觸該些滾軸121,藉以使薄膜太陽能電池10於該些滾軸121上沿第一方向71移動,使得退火室21內的薄膜太陽能電池10相對第一加熱器110移動。於一實施例中,薄膜太陽能電池10是相對第一加熱器110的加熱管111移動(如後述)。滾軸121形成長條狀且具有一長軸沿一第二方向72延伸,較佳地第二方向72大致垂直於第一方向71。The transfer device 120 is disposed in the annealing chamber 21 for transferring the CIGS thin film solar cell 10 into the annealing chamber 21 or transferring it out of the annealing chamber 21. The transport device 120 includes a plurality of rollers 121, each of which is arranged along a first direction 71 and rotates in the same direction, for example, both in a counterclockwise direction. The back surface of the thin film solar cell 10 contacts the rollers 121, so that the thin film solar cell 10 moves along the first direction 71 on the rollers 121, so that the thin film solar cell 10 in the annealing chamber 21 moves relative to the first heater 110. . In one embodiment, the thin film solar cell 10 is moved relative to the heating tube 111 of the first heater 110 (described later). The roller 121 is formed in an elongated shape and has a long axis extending in a second direction 72. Preferably, the second direction 72 is substantially perpendicular to the first direction 71.
一實施例中,第一加熱器110設於退火室21內。加熱器110包含多個第一加熱管111及多個玻璃石英套管(Robax)112。第一加熱管111為長條狀且具有一長軸沿一第二方向72延伸,亦即大致平行於該些滾軸121。第一加熱管111位於該些滾軸121底側,且不突出於該些滾軸121。較佳的情況是該些第一加熱管111更位於兩相鄰滾軸121間之縫隙的底側。此外,由於CIGS薄膜太陽能電池10包含有硒元素,在高溫狀態會蒸發,容易對退火室21中的裝置例造成腐蝕,例如腐蝕第一加熱器110的第一加熱管111使其損壞。因此於本實施例中,更於每一第一加熱管111之外側分別套上一玻璃石英套管112,藉以保護第一加熱管111。In one embodiment, the first heater 110 is disposed within the annealing chamber 21. The heater 110 includes a plurality of first heating tubes 111 and a plurality of glass quartz sleeves (Robax) 112. The first heating tube 111 is elongated and has a long axis extending in a second direction 72, that is, substantially parallel to the rollers 121. The first heating tube 111 is located on the bottom side of the rollers 121 and does not protrude from the rollers 121. Preferably, the first heating tubes 111 are located on the bottom side of the gap between the two adjacent rollers 121. Further, since the CIGS thin film solar cell 10 contains selenium, it evaporates at a high temperature, and it is easy to corrode the device in the annealing chamber 21, for example, the first heating pipe 111 of the first heater 110 is damaged. Therefore, in the embodiment, a glass quartz sleeve 112 is respectively disposed on the outer side of each of the first heating tubes 111 to protect the first heating tube 111.
發明人進行實驗,收集多片利用薄膜太陽能電池的退火裝置40完成退火後之CIGS薄膜太陽能電池10a的資料,將其上的斑點繪於圖表上,藉以得知該些斑點的形狀及位置。發明人歸納出形成斑點的原因如下。The inventors conducted experiments to collect data of a plurality of CIGS thin film solar cells 10a after annealing by using an annealing device 40 using a thin film solar cell, and plotted the spots thereon on the graph to know the shape and position of the spots. The inventors have summarized the reasons for the formation of spots as follows.
圖6顯示使用習知退火裝置完成退火後之CIGS薄膜太陽能電池的示意圖。如圖6所示,使用習知退火裝置40完成退火後之CIGS薄膜太陽能電池10a,其上的斑點大致可區分為點狀斑點51及條狀斑點52。再次參照圖3,一般而言,退火室的底板26的材質為石墨,而滾輪41及推動桿42的材質都不是採用石墨,且不與底板26一體成形,該些構件會造成CIGS薄膜太陽能電池10a受熱不均的現象,因此CIGS薄膜太陽能電池10a之對應滾輪41的部分會形成點狀斑點51,而對應推動桿42的部分會形成條狀斑點52。Figure 6 shows a schematic of a CIGS thin film solar cell after annealing using a conventional annealing device. As shown in FIG. 6, the conventionally annealed device 40 is used to complete the annealed CIGS thin film solar cell 10a, and the spots thereon can be roughly divided into a dot spot 51 and a strip spot 52. Referring again to FIG. 3, in general, the bottom plate 26 of the annealing chamber is made of graphite, and the material of the roller 41 and the push rod 42 are not made of graphite, and are not integrally formed with the bottom plate 26, and these components may cause CIGS thin film solar cells. 10a is heated unevenly, so that the portion of the corresponding roller 41 of the CIGS thin film solar cell 10a forms a dot-like spot 51, and the portion corresponding to the push rod 42 forms a strip-shaped spot 52.
相對於此,依本發明一實施例,由於沒有該些元件,CIGS薄膜太陽能電池10能夠均勻地接觸滾軸121,因此第一加熱器110能夠對CIGS薄膜太陽能電池10均勻地加熱,而減少該些斑點的產生。In contrast, according to an embodiment of the present invention, since the CIGS thin film solar cell 10 can uniformly contact the roller 121 without the components, the first heater 110 can uniformly heat the CIGS thin film solar cell 10, thereby reducing the The production of some spots.
依據習知薄膜太陽能電池的退火裝置20,傳送裝置40包含靜止狀態及傳送狀態,造成CIGS薄膜太陽能電池10在退火裝置20的各退火室中間歇性地移動。於加熱器對薄膜太陽能電池的加熱程序中,傳送裝置40處於靜止狀態,CIGS薄膜太陽能電池10靜置於退火室21的底板26。由於加熱管111為長條狀,而CIGS薄膜太陽能電池10的玻璃基板11為面狀,因而造成靠近加熱管111之玻璃基板11的部分受熱較多,而遠離加熱管111之玻璃基板11的部分受熱較少,產生受熱不均的現象,進而影響CIGSe金屬層16內各金屬的結晶、濃度等物理特徵不均勻。如此,會造成CIGS薄膜太陽能電池10a之品質及良率的下降。According to the conventional annealing apparatus 20 for a thin film solar cell, the transfer device 40 includes a stationary state and a transfer state, causing the CIGS thin film solar cell 10 to intermittently move in each annealing chamber of the annealing device 20. In the heating process of the heater to the thin film solar cell, the transfer device 40 is in a stationary state, and the CIGS thin film solar cell 10 is placed in the bottom plate 26 of the annealing chamber 21. Since the heating tube 111 is elongated, and the glass substrate 11 of the CIGS thin film solar cell 10 is planar, the portion of the glass substrate 11 adjacent to the heating tube 111 is heated more, and the portion of the glass substrate 11 away from the heating tube 111 is far away. Less heat is generated, resulting in uneven heating, which in turn affects the physical characteristics such as crystallinity and concentration of each metal in the CIGSe metal layer 16. As a result, the quality and yield of the CIGS thin film solar cell 10a are lowered.
相對於此,於本發明一實施例中,由於滾軸121能夠連續地驅動CIGS薄膜太陽能電池10的玻璃基板11,使其連續地沿第一方向71移動,讓CIGS薄膜太陽能電池10的表面都能夠較均勻地受熱,可以改善受熱不均的現象,提升CIGS薄膜太陽能電池10a之品質及良率。In contrast, in an embodiment of the present invention, since the roller 121 can continuously drive the glass substrate 11 of the CIGS thin film solar cell 10 to continuously move in the first direction 71, the surface of the CIGS thin film solar cell 10 is The ability to receive heat more uniformly can improve the phenomenon of uneven heating and improve the quality and yield of the CIGS thin film solar cell 10a.
此外,於一實施例中,薄膜太陽能電池退火裝置100亦可以更包含一第二加熱器130及一石墨板140。第二加熱器130包含多個長條狀的第二加熱管131。石墨板140設於第二加熱器130與傳送裝置120間,於退火過程中,由於第二加熱器130的該些第二加熱管131先對石墨板140加熱,石墨板140能夠預先均勻化該些加熱管131的熱,形成面的熱源,再對CIGS薄膜太陽能電池10加熱。因此石墨板140能夠更進一步改善受熱不均的現象。此外,由於退火室21內,含有硒元素,容易對第二加熱器130的該些第二加熱管131造成腐蝕,因此第二加熱器130與CIGS薄膜太陽能電池10間隔著石墨板140,還能夠有保護第二加熱器130的作用。In addition, in an embodiment, the thin film solar cell annealing device 100 may further include a second heater 130 and a graphite plate 140. The second heater 130 includes a plurality of elongated second heating tubes 131. The graphite plate 140 is disposed between the second heater 130 and the transfer device 120. During the annealing process, since the second heating tubes 131 of the second heater 130 first heat the graphite plate 140, the graphite plate 140 can be uniformly homogenized. The heat of the tube 131 is heated to form a surface heat source, and the CIGS thin film solar cell 10 is heated. Therefore, the graphite plate 140 can further improve the phenomenon of uneven heating. In addition, since the second heating tube 131 of the second heater 130 is easily corroded by the selenium element in the annealing chamber 21, the second heater 130 and the CIGS thin film solar cell 10 are separated by the graphite plate 140, and There is protection for the second heater 130.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。另外,本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
10...薄膜太陽能電池10. . . Thin film solar cell
100...薄膜太陽能電池退火裝置100. . . Thin film solar cell annealing device
10a...CIGS薄膜太陽能電池10a. . . CIGS thin film solar cell
11...玻璃基板11. . . glass substrate
111...第一加熱管111. . . First heating tube
112...玻璃石英套管112. . . Glass quartz sleeve
12...鉬金屬層12. . . Molybdenum metal layer
120...傳送裝置120. . . Conveyor
121...滾軸121. . . roller
13...銅鎵金屬層13. . . Copper gallium metal layer
130...第二加熱器130. . . Second heater
131...第二加熱管131. . . Second heating tube
14...銦金屬層14. . . Indium metal layer
140...石墨板140. . . Graphite plate
15...硒層15. . . Selenium layer
16...CIGSe金屬層16. . . CIGSe metal layer
20...退火裝置20. . . Annealing device
21~25...退火室21~25. . . Annealing chamber
26...底板26. . . Bottom plate
27...凹槽27. . . Groove
31~32...冷卻室31~32. . . Cooling room
35...入口35. . . Entrance
36...出口36. . . Export
40...傳送裝置40. . . Conveyor
41...滾輪41. . . Wheel
42...推動桿42. . . Push rod
43...抵靠桿43. . . Abutting rod
50...加熱器50. . . Heater
51...點狀斑點51. . . Spotted spot
52...條狀斑點52. . . Strip spot
60...石墨板60. . . Graphite plate
71...第一方向71. . . First direction
72...第二方向72. . . Second direction
圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖2A顯示一習知薄膜太陽能電池的退火裝置之外部結構的示意圖。2A is a schematic view showing the external structure of an annealing device of a conventional thin film solar cell.
圖2B顯示一習知薄膜太陽能電池的退火裝置之各退火室之內部結構的示意圖。2B is a schematic view showing the internal structure of each annealing chamber of an annealing device of a conventional thin film solar cell.
圖3顯示一習知薄膜太陽能電池退火裝置之傳送裝置的示意圖。Figure 3 shows a schematic view of a conventional transfer device for a thin film solar cell annealing apparatus.
圖4顯示依本發明一實施例薄膜太陽能電池退火裝置的示意圖。4 is a schematic view showing a thin film solar cell annealing apparatus according to an embodiment of the present invention.
圖5顯示依本發明一實施例薄膜太陽能電池退火裝置之傳送裝置的示意圖。Figure 5 is a schematic view showing a conveying apparatus of a thin film solar cell annealing apparatus according to an embodiment of the present invention.
圖6顯示使用薄膜太陽能電池的退火裝置完成退火後之CIGS薄膜太陽能電池的示意圖。Figure 6 shows a schematic view of a CIGS thin film solar cell after annealing has been completed using an annealing device for a thin film solar cell.
10...CIGS薄膜太陽能電池10. . . CIGS thin film solar cell
100...薄膜太陽能電池退火裝置100. . . Thin film solar cell annealing device
110...第一加熱器110. . . First heater
111...第一加熱管111. . . First heating tube
112...玻璃石英套管112. . . Glass quartz sleeve
121...滾軸121. . . roller
130...第二加熱器130. . . Second heater
131...第二加熱管131. . . Second heating tube
140...石墨板140. . . Graphite plate
21...退火室twenty one. . . Annealing chamber
35...入口35. . . Entrance
Claims (4)
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TW200537990A (en) * | 2004-05-06 | 2005-11-16 | Toppoly Optoelectronics Corp | An electrostatic discharge protection device and an apparatus using the same |
US20080012499A1 (en) * | 2006-06-26 | 2008-01-17 | Thermal Processing Solutions, Inc. | Rapid Thermal Firing IR Conveyor Furnace Having High Intensity Heating Section |
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TW200537990A (en) * | 2004-05-06 | 2005-11-16 | Toppoly Optoelectronics Corp | An electrostatic discharge protection device and an apparatus using the same |
US20080012499A1 (en) * | 2006-06-26 | 2008-01-17 | Thermal Processing Solutions, Inc. | Rapid Thermal Firing IR Conveyor Furnace Having High Intensity Heating Section |
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