TWI508179B - Annealing device for a thin-film solar cell - Google Patents
Annealing device for a thin-film solar cell Download PDFInfo
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- TWI508179B TWI508179B TW099124382A TW99124382A TWI508179B TW I508179 B TWI508179 B TW I508179B TW 099124382 A TW099124382 A TW 099124382A TW 99124382 A TW99124382 A TW 99124382A TW I508179 B TWI508179 B TW I508179B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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本發明係關於一種薄膜太陽能電池的退火裝置，尤其關於一種減少CIGS薄膜太陽能電池中之硒元素蒸發的薄膜太陽能電池的退火裝置。The present invention relates to an annealing apparatus for a thin film solar cell, and more particularly to an annealing apparatus for a thin film solar cell which reduces evaporation of selenium in a CIGS thin film solar cell.
薄膜太陽能電池中CIGS(copper indium gallium(di)selenide)是屬於化合物半導體。CIGS屬於多晶薄膜的形式，它是由銅、銦、鎵以及硒所組成的一三五族化合物半導體材料。圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。如圖1A所示，CIGS薄膜太陽能電池10包含一玻璃基板11。於玻璃基板11上依序沉積鉬金屬層12、銅鎵金屬層13、銦金屬層14及硒層15。如圖1B所示，對圖1A步驟的CIGS薄膜太陽能電池10，進行退火(annealing)處理，退火主要是指一種使材料曝露於高溫一段時間後，然後再慢慢冷卻的製程，退火處理後，銅鎵金屬層13、銦金屬層14及硒層15會形成一CIGSe金屬層16。CIGS (copper indium gallium (di) selenide) is a compound semiconductor in a thin film solar cell. CIGS is in the form of a polycrystalline film, which is a group of three or five compound semiconductor materials composed of copper, indium, gallium and selenium. Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell. As shown in FIG. 1A, the CIGS thin film solar cell 10 includes a glass substrate 11. A molybdenum metal layer 12, a copper gallium metal layer 13, an indium metal layer 14, and a selenium layer 15 are sequentially deposited on the glass substrate 11. As shown in FIG. 1B, the CIGS thin film solar cell 10 of the step of FIG. 1A is subjected to an annealing treatment, and the annealing mainly refers to a process of exposing the material to a high temperature for a period of time and then slowly cooling, after annealing, The copper gallium metal layer 13, the indium metal layer 14, and the selenium layer 15 form a CIGSe metal layer 16.
圖2A顯示一習知薄膜太陽能電池的退火裝置之外部結構的示意圖。習知薄膜太陽能電池的退火裝置20，包含互相連通的5個退火室21~25、及2個儲存室31~32。進行退火處理時，退火裝置20的一傳送裝置(未圖示)，會從退火裝置20的入口35將圖1A步驟的CIGS薄膜太陽能電池10，送入至退火室21進行預熱，再藉由傳送裝置送至退火室22快速加熱至高溫狀態，例如500℃~600℃。於退火室23及24中使CIGS薄膜太陽能電池10保持在高溫狀態下一段時間。在退火室25中使CIGS薄膜太陽能電池10預先降溫，最後再使CIGS薄膜太陽能電池10於儲存室31~32中緩慢降溫至低溫狀態後，從出口36送出。圖2B顯示一習知薄膜太陽能電池的退火裝置之各退火室之內部結構的示意圖。如圖2B所示，退火室21連通於一排氣管33，且於其內設有一底板26，CIGS薄膜太陽能電池10靜置於底板26上。一加熱器50隔著一石墨板60對CIGS薄膜太陽能電池10進行加熱。加熱器50包含有多個長條狀的加熱管51。2A is a schematic view showing the external structure of an annealing device of a conventional thin film solar cell. A conventional thin film solar cell annealing apparatus 20 includes five annealing chambers 21 to 25 and two storage chambers 31 to 32 that communicate with each other. When the annealing treatment is performed, a transfer device (not shown) of the annealing device 20 feeds the CIGS thin film solar cell 10 of the step of FIG. 1A from the inlet 35 of the annealing device 20 to the annealing chamber 21 for preheating. The transfer device is sent to the annealing chamber 22 for rapid heating to a high temperature state, for example, 500 ° C to 600 ° C. The CIGS thin film solar cell 10 is maintained in a high temperature state for a while in the annealing chambers 23 and 24. The CIGS thin film solar cell 10 is previously cooled in the annealing chamber 25, and finally, the CIGS thin film solar cell 10 is gradually cooled to a low temperature state in the storage chambers 31 to 32, and then sent out from the outlet 36. 2B is a schematic view showing the internal structure of each annealing chamber of an annealing device of a conventional thin film solar cell. As shown in FIG. 2B, the annealing chamber 21 is connected to an exhaust pipe 33, and a bottom plate 26 is disposed therein, and the CIGS thin film solar cell 10 is placed on the bottom plate 26. A heater 50 heats the CIGS thin film solar cell 10 via a graphite plate 60. The heater 50 includes a plurality of elongated heating tubes 51.
然而，習知退火裝置20所形成的CIGS薄膜太陽能電池10a，其品質及良率尚具有改善空間。因此，需要一種品質或良率高於習知退火裝置20的CIGS薄膜太陽能電池的退火裝置。However, the CIGS thin film solar cell 10a formed by the conventional annealing device 20 has room for improvement in quality and yield. Therefore, there is a need for an annealing apparatus for a CIGS thin film solar cell having a higher quality or yield than the conventional annealing device 20.
本發明一實施例之目的在於提供一種減少CIGS薄膜太陽能電池中之硒元素蒸發的薄膜太陽能電池的退火裝置。It is an object of an embodiment of the present invention to provide an annealing apparatus for a thin film solar cell that reduces evaporation of selenium in a CIGS thin film solar cell.
依據本發明一實施例，提供一種薄膜太陽能電池退火裝置，其適於對一薄膜太陽能電池進行退火製程，薄膜太陽能電池退火裝置包含至少一退火室、一外罩及一加熱器。退火室包含一底板，外罩設於退火室，加熱器設於退火室內，用以對薄膜太陽能電池加熱。於加熱器對薄膜太陽能電池的加熱程序中，外罩與底板界定一密閉空間，薄膜太陽能電池置於密閉空間內。According to an embodiment of the invention, a thin film solar cell annealing device is provided, which is suitable for annealing a thin film solar cell, and the thin film solar cell annealing device comprises at least one annealing chamber, a cover and a heater. The annealing chamber comprises a bottom plate, the outer cover is arranged in the annealing chamber, and the heater is arranged in the annealing chamber for heating the thin film solar cell. In the heating process of the heater for the thin film solar cell, the outer cover and the bottom plate define a sealed space, and the thin film solar cell is placed in the sealed space.
於一實施例中，外罩包含一頂板及多個側翼板，該些側翼板自頂板的邊緣向底板延伸。較佳的情況是，於加熱器對薄膜太陽能電池的加熱程序中，該些側翼板抵靠底板，藉以形成密閉空間。In one embodiment, the outer cover includes a top panel and a plurality of side panels that extend from the edge of the top panel toward the bottom panel. Preferably, in the heating process of the heater for the thin film solar cell, the side panels abut against the bottom plate to form a closed space.
於一實施例中，加熱器包含多個加熱管用以對薄膜太陽能電池加熱，且於加熱器對薄膜太陽能電池的加熱程序中，該些加熱管持續地移動，藉以使該些加熱管相對薄膜太陽能電池移動。較佳的情況是該些加熱管進行往復運動。In one embodiment, the heater includes a plurality of heating tubes for heating the thin film solar cells, and in the heating process of the thin film solar cells by the heaters, the heating tubes are continuously moved, thereby making the heating tubes relatively thin film solar energy The battery moves. Preferably, the heating tubes are reciprocated.
於一實施例中，加熱器包含多個加熱管及一導熱板，該些加熱管為長條狀用以對薄膜太陽能電池加熱，導熱板為平面狀且設於外罩與該些加熱管間，且導熱板的導熱係數大於外罩的導熱係數。In one embodiment, the heater includes a plurality of heating tubes and a heat conducting plate, wherein the heating tubes are elongated to heat the thin film solar cells, and the heat conducting plates are planar and disposed between the outer cover and the heating tubes. And the thermal conductivity of the heat conducting plate is greater than the thermal conductivity of the outer cover.
於一實施例中，加熱器包含一加熱板係為平面狀，藉以形成平面的熱源。In one embodiment, the heater includes a heating plate that is planar to form a planar heat source.
依據本發明一實施例，當薄膜太陽能電池退火裝置的傳送裝置處於靜止狀態，且加熱器對靜置於退火室的底板上之CIGS薄膜太陽能電池加熱時，外罩與底板間形成密閉空間，使CIGS薄膜太陽能電池中的硒元素被蒸發後無法離開此密閉空間，能夠減少CIGS薄膜太陽能電池中的硒元素被蒸發的量，進而增加退火處理後之CIGS薄膜太陽能電池的品質及良率。According to an embodiment of the invention, when the conveying device of the thin film solar cell annealing device is in a stationary state, and the heater heats the CIGS thin film solar cell resting on the bottom plate of the annealing chamber, a sealed space is formed between the outer cover and the bottom plate, so that CIGS The selenium element in the thin film solar cell cannot be separated from the sealed space after being evaporated, which can reduce the amount of selenium element evaporated in the CIGS thin film solar cell, thereby increasing the quality and yield of the CIGS thin film solar cell after annealing.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉實施例並配合所附圖式，作詳細說明如下。Other objects and advantages of the present invention will become apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the invention will be apparent from
圖3A顯示依本發明一實施例薄膜太陽能電池退火裝置之一狀態下的示意圖。圖3B顯示依本發明一實施例薄膜太陽能電池退火裝置之另一狀態下的示意圖。如圖3A所示，薄膜太陽能電池退火裝置100用以對一CIGS薄膜太陽能電池10進行退火製程，其包含至少一退火室、一加熱器130、一底板26、一外罩140及一傳送裝置(未圖示)。於本實施例中，薄膜太陽能電池退火裝置100設有5個退火室21~25(請參照圖2A)。以下以退火室21為例示加以說明，其餘退火室22~25相同於退火室21，因此省略其相關說明。Fig. 3A is a schematic view showing a state of a thin film solar cell annealing apparatus according to an embodiment of the present invention. 3B is a schematic view showing another state of a thin film solar cell annealing apparatus according to an embodiment of the present invention. As shown in FIG. 3A, the thin film solar cell annealing apparatus 100 is used for annealing a CIGS thin film solar cell 10, which comprises at least one annealing chamber, a heater 130, a bottom plate 26, a cover 140 and a conveying device (not Graphic). In the present embodiment, the thin film solar cell annealing apparatus 100 is provided with five annealing chambers 21 to 25 (please refer to FIG. 2A). Hereinafter, the annealing chamber 21 will be described as an example, and the remaining annealing chambers 22 to 25 are the same as the annealing chamber 21, and thus the description thereof will be omitted.
步驟S02：當傳送裝置要將CIGS薄膜太陽能電池10傳送至退火室21內時，外罩140往遠離底板26的方向移動，以便於將CIGS薄膜太陽能電池10置於底板26上。Step S02: When the transfer device is to transport the CIGS thin film solar cell 10 into the annealing chamber 21, the outer cover 140 is moved away from the bottom plate 26 to facilitate placement of the CIGS thin film solar cell 10 on the bottom plate 26.
步驟S04：外罩140再往底板26的方向移動，並扺靠底板26，於外罩140及底板26間形成一密閉的空間，如圖3B所示。Step S04: The outer cover 140 is further moved toward the bottom plate 26 and abuts against the bottom plate 26 to form a sealed space between the outer cover 140 and the bottom plate 26, as shown in FIG. 3B.
步驟S06：加熱器130隔著外罩140對CIGS薄膜太陽能電池10進行加熱一預定時間。Step S06: The heater 130 heats the CIGS thin film solar cell 10 through the outer cover 140 for a predetermined time.
步驟S08：當傳送裝置要將CIGS薄膜太陽能電池10傳出退火室21外時，外罩140再往遠離底板26的方向移動，以便於將CIGS薄膜太陽能電池10傳出退火室21外。Step S08: When the transfer device is to pass the CIGS thin film solar cell 10 out of the annealing chamber 21, the outer cover 140 is further moved away from the bottom plate 26 to facilitate the passage of the CIGS thin film solar cell 10 out of the annealing chamber 21.
因此，於退火室21中，除了傳送CIGS薄膜太陽能電池10的動作之外，大部分的時間CIGS薄膜太陽能電池10係處於外罩140與底板26所界定的密閉空間內。依據本實施例，能夠改善經過退火程序後之CIGS薄膜太陽能電池10a的品質及良率，以下將更詳細說明其原因。Therefore, in the annealing chamber 21, in addition to the operation of transporting the CIGS thin film solar cell 10, most of the time, the CIGS thin film solar cell 10 is in a sealed space defined by the outer cover 140 and the bottom plate 26. According to the present embodiment, the quality and yield of the CIGS thin film solar cell 10a after the annealing process can be improved, and the reason will be described in more detail below.
CIGS薄膜太陽能電池10中含有硒元素，於高溫的退火室中會被蒸發，硒元素的蒸氣具有腐蝕性且係為有毒物質，由於習知退火裝置20的退火室21~25及儲存室31~32互相連通，硒元素的蒸氣容易從入口35及出口36散出。因此，請再次參照圖2B，一般習知退火裝置20包含有一排氣管33連通於退火室21，使退火室21內形成負壓，而能夠將退火室21中的硒蒸氣透過排氣管33排出於退火室21之外，並加以收集，以避免硒元素的蒸氣洩漏於周圍環境中。然而，由於退火室21處於高溫狀態，且抽取退火室21中的硒蒸氣後，退火室21內的硒蒸氣含量會減少，CIGS薄膜太陽能電池10中的硒元素更容易蒸發至退火室21的空間，造成CIGS薄膜太陽能電池10的硒元素的含量減少，因此依據習知退火裝置20的技術，降低了CIGS薄膜太陽能電池10的品質及良率。此外，由於退火室21持續處於負壓狀態，抽取更多的硒蒸氣，隨後尚需要負擔處理該些硒蒸氣的成本，因此製造成本較高。The CIGS thin film solar cell 10 contains selenium element and is evaporated in a high temperature annealing chamber. The vapor of the selenium element is corrosive and is a toxic substance. The annealing chambers 21 to 25 and the storage chamber 31 of the conventional annealing device 20 are used. 32 is interconnected, and the vapor of selenium is easily released from the inlet 35 and the outlet 36. Therefore, referring again to FIG. 2B, the conventional annealing device 20 includes an exhaust pipe 33 communicating with the annealing chamber 21 to form a negative pressure in the annealing chamber 21, and the selenium vapor in the annealing chamber 21 can be transmitted through the exhaust pipe 33. It is discharged outside the annealing chamber 21 and collected to prevent the vapor of selenium from leaking into the surrounding environment. However, since the annealing chamber 21 is in a high temperature state, and the selenium vapor in the annealing chamber 21 is extracted, the selenium vapor content in the annealing chamber 21 is reduced, and the selenium element in the CIGS thin film solar cell 10 is more easily evaporated to the space of the annealing chamber 21. As a result, the content of selenium element in the CIGS thin film solar cell 10 is reduced, so that the quality and yield of the CIGS thin film solar cell 10 are lowered according to the technique of the conventional annealing device 20. Further, since the annealing chamber 21 is continuously in a negative pressure state, more selenium vapor is extracted, and then it is necessary to bear the cost of processing the selenium vapors, so that the manufacturing cost is high.
相較於此，由於在傳輸裝置的靜止狀態，退火室21對CIGS薄膜太陽能電池10進行加熱處理時，使CIGS薄膜太陽能電池10於外罩140與底板26所界定的密閉空間內加熱。雖然CIGS薄膜太陽能電池10中的硒元素還是會因退火室21處於高溫狀態而被蒸發，但因為被蒸發後的硒會留在此密閉空間內，硒的蒸氣壓會升高，因而減少了CIGS薄膜太陽能電池10中的硒元素被蒸發的量。藉此，減少CIGS薄膜太陽能電池10中的硒元素的流失，增加CIGS薄膜太陽能電池10的品質及含量。尚且，由於被抽取之硒蒸氣的量已降低，而能夠減少後續處理硒蒸氣的成本。In contrast, when the annealing chamber 21 heats the CIGS thin film solar cell 10 in the stationary state of the transport device, the CIGS thin film solar cell 10 is heated in the sealed space defined by the outer cover 140 and the bottom plate 26. Although the selenium element in the CIGS thin film solar cell 10 is evaporated due to the high temperature state of the annealing chamber 21, since the selenium which is evaporated will remain in the closed space, the vapor pressure of selenium will increase, thereby reducing the CIGS. The amount of selenium element in the thin film solar cell 10 is evaporated. Thereby, the loss of selenium in the CIGS thin film solar cell 10 is reduced, and the quality and content of the CIGS thin film solar cell 10 are increased. Moreover, since the amount of selenium vapor extracted is reduced, the cost of subsequent treatment of selenium vapor can be reduced.
外罩140的形狀及材質不加以限定，但由於硒元素的蒸氣具有腐蝕性，因此較佳的情況是採用石墨。於本實施例中，外罩140包含一頂板141及多個側翼板142。該些側翼板142自頂板141的邊緣朝底板26的方向延伸。The shape and material of the outer cover 140 are not limited, but since the vapor of the selenium element is corrosive, it is preferable to use graphite. In the embodiment, the outer cover 140 includes a top plate 141 and a plurality of side flaps 142. The side panels 142 extend from the edge of the top panel 141 toward the bottom panel 26.
加熱器130包含多個長條狀的加熱管131。由於加熱管111為長條狀，而CIGS薄膜太陽能電池10的玻璃基板11為面狀，因而造成靠近加熱管111之玻璃基板11的部分受熱較多，而遠離加熱管111之玻璃基板11的部分受熱較少，產生受熱不均的現象，進而影響CIGSe金屬層16內各金屬的結晶、濃度等物理特徵不均勻。如此，亦會造成CIGS薄膜太陽能電池10a之品質及良率的下降。於本實施例中，外罩140的頂板141位於加熱器130與CIGS薄膜太陽能電池10間。於退火過程中，由於加熱器130的該些加熱管131先對外罩140的頂板141加熱，外罩140的頂板141能夠預先均勻化該些加熱管131的熱，形成面的熱源，再對CIGS薄膜太陽能電池10加熱。因此外罩140的頂板141能夠更進一步改善受熱不均的現象。此外，因加熱器130與CIGS薄膜太陽能電池10間隔著頂板141，還能夠有保護加熱器130的作用，以避免硒腐蝕加熱器130。The heater 130 includes a plurality of elongated heating tubes 131. Since the heating tube 111 is elongated, and the glass substrate 11 of the CIGS thin film solar cell 10 is planar, the portion of the glass substrate 11 adjacent to the heating tube 111 is heated more, and the portion of the glass substrate 11 away from the heating tube 111 is far away. Less heat is generated, resulting in uneven heating, which in turn affects the physical characteristics such as crystallinity and concentration of each metal in the CIGSe metal layer 16. As a result, the quality and yield of the CIGS thin film solar cell 10a are also lowered. In the present embodiment, the top plate 141 of the outer cover 140 is located between the heater 130 and the CIGS thin film solar cell 10. During the annealing process, since the heating tubes 131 of the heater 130 are heated by the top plate 141 of the outer cover 140, the top plate 141 of the outer cover 140 can pre-homogenize the heat of the heating tubes 131 to form a surface heat source, and then the CIGS film. The solar cell 10 is heated. Therefore, the top plate 141 of the outer cover 140 can further improve the phenomenon of uneven heating. Further, since the heater 130 is spaced apart from the CIGS thin film solar cell 10 by the top plate 141, it is also possible to protect the heater 130 from selenium corrosion of the heater 130.
於一實施例中，加熱器130更包含有一驅動裝置133及一固定裝置132。驅動裝置133可以為一引導軌道。固定裝置132可移動地設於驅動裝置133。加熱管131固定於固定裝置132，並隨固定裝置132移動而移動。In one embodiment, the heater 130 further includes a driving device 133 and a fixing device 132. The driving device 133 can be a guiding track. The fixing device 132 is movably disposed on the driving device 133. The heating tube 131 is fixed to the fixture 132 and moves as the fixture 132 moves.
在傳送裝置的靜止狀態時，CIGS薄膜太陽能電池10靜置於退火室21的底板26，此時驅動裝置133驅動(被固定於固定裝置132的)加熱管131相對薄膜太陽能電池10移動。由於加熱管131持續地相對薄膜太陽能電池10移動，因此能夠使薄膜太陽能電池10較均勻地受熱。於本實施例中，使該些加熱管131進行往復運動。此外，當加熱管131於一行徑間進行往復運動時，加熱管131在該行徑的兩端點會有停頓的情況，使得加熱管131在靠近該行徑的兩端點之部分的時間會大於加熱管131在該行徑之中點的時間，因此較佳的情況是，使加熱管131在靠近該行徑的端點之部分的速度大於加熱管131在該行徑之中點之部分的速度。In the stationary state of the conveyor, the CIGS thin film solar cell 10 is placed in the bottom plate 26 of the annealing chamber 21, at which time the driving device 133 drives the heating tube 131 (fixed to the fixture 132) to move relative to the thin film solar cell 10. Since the heating tube 131 is continuously moved relative to the thin film solar cell 10, the thin film solar cell 10 can be heated more uniformly. In the present embodiment, the heating tubes 131 are reciprocated. In addition, when the heating pipe 131 reciprocates between the rows of wires, the heating pipe 131 may be stopped at the ends of the traveling path, so that the time of the heating pipe 131 near the ends of the traveling path is greater than the heating. The time at which the tube 131 is at the midpoint of the path is preferably such that the velocity of the portion of the heating tube 131 near the end of the path is greater than the velocity of the portion of the heating tube 131 at the midpoint of the path.
此外，本發明一實施例之加熱器130不限定於上述結構。圖4顯示依本發明一實施例薄膜太陽能電池退火裝置的示意圖。圖4實施例之退火裝置相似於圖3B實施例之退火裝置，因此相同的元件使用相同的符號並省略其相關說明。如圖4所示，於本實施例中，加熱器130更包含有一導熱板134。導熱板134係呈面狀且設於該些加熱管131與外罩140的頂板141之間。由於硒元素的蒸氣具有腐蝕性，因此外罩140應使用能抗硒腐蝕的材質，例如石墨。然而當使用的材質導熱係數較差時，即使該些加熱管131隔著外罩140亦無法使CIGS薄膜太陽能電池10平均地受熱。相較於此，於本實施例中，導熱板134的導熱係數大於頂板141的導熱係數，藉以使該些加熱管131所產生的熱能夠較平均地分散至導熱板134的整面上。由於該些加熱管131同時隔著外罩140之頂板141對CIGS薄膜太陽能電池10加熱，能夠使其更平均地受熱。Further, the heater 130 according to an embodiment of the present invention is not limited to the above configuration. 4 is a schematic view showing a thin film solar cell annealing apparatus according to an embodiment of the present invention. The annealing apparatus of the embodiment of Fig. 4 is similar to the annealing apparatus of the embodiment of Fig. 3B, and therefore the same elements are denoted by the same reference numerals and their description will be omitted. As shown in FIG. 4, in the embodiment, the heater 130 further includes a heat conducting plate 134. The heat conducting plate 134 is planar and disposed between the heating tubes 131 and the top plate 141 of the outer cover 140. Since the vapor of selenium is corrosive, the outer cover 140 should be made of a material resistant to selenium corrosion, such as graphite. However, when the material used has a poor thermal conductivity, even if the heating tubes 131 are interposed between the outer covers 140, the CIGS thin film solar cells 10 cannot be heated on average. In this embodiment, the thermal conductivity of the heat conducting plate 134 is greater than the thermal conductivity of the top plate 141, so that the heat generated by the heating tubes 131 can be more evenly distributed to the entire surface of the heat conducting plate 134. Since the heating tubes 131 simultaneously heat the CIGS thin film solar cells 10 via the top plate 141 of the outer cover 140, they can be heated more evenly.
圖5顯示依本發明另一實施例薄膜太陽能電池退火裝置的示意圖。圖5實施例之退火裝置相似於圖4實施例之退火裝置，因此相同的元件使用相同的符號並省略其相關說明。如圖5所示，於本實施例中，加熱器130不使用加熱管，而採用一加熱板135。加熱板135相同於加熱管131能夠產生熱源，且加熱板135為一平面，因此能夠均勻地對CIGS薄膜太陽能電池10加熱。Figure 5 is a schematic view showing a thin film solar cell annealing apparatus according to another embodiment of the present invention. The annealing apparatus of the embodiment of Fig. 5 is similar to the annealing apparatus of the embodiment of Fig. 4, and therefore the same elements are denoted by the same reference numerals and their description will be omitted. As shown in FIG. 5, in the present embodiment, the heater 130 does not use a heating tube but employs a heating plate 135. The heating plate 135 can generate a heat source similarly to the heating pipe 131, and the heating plate 135 is a flat surface, so that the CIGS thin film solar cell 10 can be uniformly heated.
依據本發明一實施例，包含有一外罩140，當薄膜太陽能電池退火裝置100的傳送裝置處於靜止狀態，且加熱器130對靜置於退火室21的底板26上之CIGS薄膜太陽能電池10加熱時，外罩140與底板26間形成密閉空間，使CIGS薄膜太陽能電池10中的硒元素被蒸發後無法離開此密閉空間，能夠減少CIGS薄膜太陽能電池10中的硒元素被蒸發的量，進而增加CIGS薄膜太陽能電池10a的品質及良率。此外，CIGS薄膜太陽能電池10中的硒元素被蒸發的量已減少，因此薄膜太陽能電池退火裝置100從退火室21中所抽取出之硒元素的量亦隨之減少，因此能夠減少後續處理被抽取出之硒蒸氣的成本。According to an embodiment of the present invention, a cover 140 is included. When the transfer device of the thin film solar cell annealing apparatus 100 is in a stationary state, and the heater 130 heats the CIGS thin film solar cell 10 resting on the bottom plate 26 of the annealing chamber 21, A sealed space is formed between the outer cover 140 and the bottom plate 26, so that the selenium element in the CIGS thin film solar cell 10 cannot be separated from the sealed space after being evaporated, thereby reducing the amount of selenium evaporated in the CIGS thin film solar cell 10, thereby increasing the CIGS thin film solar energy. The quality and yield of the battery 10a. In addition, the amount of selenium element evaporated in the CIGS thin film solar cell 10 has been reduced, so that the amount of selenium extracted from the annealing chamber 21 of the thin film solar cell annealing apparatus 100 is also reduced, thereby reducing the subsequent processing to be extracted. The cost of selenium vapor.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。另外，本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外，摘要部分和標題僅是用來輔助專利文件搜尋之用，並非用來限制本發明之權利範圍。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
10．．．CIGS薄膜太陽能電池10. . . CIGS thin film solar cell
100．．．薄膜太陽能電池退火裝置100. . . Thin film solar cell annealing device
10a．．．CIGS薄膜太陽能電池10a. . . CIGS thin film solar cell
11．．．玻璃基板11. . . glass substrate
111．．．加熱管111. . . Heating pipe
12．．．鉬金屬層12. . . Molybdenum metal layer
13．．．銅鎵金屬層13. . . Copper gallium metal layer
130．．．加熱器130. . . Heater
131．．．加熱管131. . . Heating pipe
132．．．固定裝置132. . . Fixtures
133．．．驅動裝置133. . . Drive unit
134．．．導熱板134. . . Thermal plate
135．．．加熱板135. . . Heating plate
14．．．銦金屬層14. . . Indium metal layer
140．．．外罩140. . . Cover
141．．．頂板141. . . roof
142．．．兩側翼板142. . . Side flaps
15．．．硒層15. . . Selenium layer
16．．．CIGSe金屬層16. . . CIGSe metal layer
20．．．退火裝置20. . . Annealing device
21~25．．．退火室21~25. . . Annealing chamber
26．．．底板26. . . Bottom plate
31．．．儲存室31. . . Storage Room
32．．．儲存室32. . . Storage Room
33．．．排氣管33. . . exhaust pipe
35．．．入口35. . . Entrance
36．．．出口36. . . Export
50．．．加熱器50. . . Heater
51．．．加熱管51. . . Heating pipe
60．．．石墨板60. . . Graphite plate
圖1A顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1A shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖1B顯示CIGS薄膜太陽能電池製造過程之一步驟的示意圖。Figure 1B shows a schematic diagram of one of the steps in the fabrication of a CIGS thin film solar cell.
圖2A顯示一習知薄膜太陽能電池的退火裝置之外部結構的示意圖。2A is a schematic view showing the external structure of an annealing device of a conventional thin film solar cell.
圖2B顯示一習知薄膜太陽能電池的退火裝置之各退火室之內部結構的示意圖。2B is a schematic view showing the internal structure of each annealing chamber of an annealing device of a conventional thin film solar cell.
圖3A顯示依本發明一實施例薄膜太陽能電池退火裝置之一狀態下的示意圖。Fig. 3A is a schematic view showing a state of a thin film solar cell annealing apparatus according to an embodiment of the present invention.
圖3B顯示依本發明一實施例薄膜太陽能電池退火裝置之另一狀態下的示意圖。3B is a schematic view showing another state of a thin film solar cell annealing apparatus according to an embodiment of the present invention.
圖4顯示依本發明一實施例薄膜太陽能電池退火裝置的示意圖。4 is a schematic view showing a thin film solar cell annealing apparatus according to an embodiment of the present invention.
圖5顯示依本發明另一實施例薄膜太陽能電池退火裝置的示意圖。Figure 5 is a schematic view showing a thin film solar cell annealing apparatus according to another embodiment of the present invention.
10．．．CIGS薄膜太陽能電池10. . . CIGS thin film solar cell
100．．．薄膜太陽能電池退火裝置100. . . Thin film solar cell annealing device
130．．．加熱器130. . . Heater
131．．．加熱管131. . . Heating pipe
132．．．固定裝置132. . . Fixtures
133．．．驅動裝置133. . . Drive unit
140．．．外罩140. . . Cover
21．．．退火室twenty one. . . Annealing chamber
26．．．底板26. . . Bottom plate
35．．．入口35. . . Entrance
36．．．出口36. . . Export
Claims (10)
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Citations (5)
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|---|---|---|---|---|
| TW498057B (en) * | 1999-11-25 | 2002-08-11 | Schott Glas | Method and device for annealing flat bodies |
| WO2003005456A1 (en) * | 2001-07-06 | 2003-01-16 | Honda Giken Kogyo Kabushiki Kaisha | Method for forming light-absorbing layer |
| TW200725694A (en) * | 2005-08-24 | 2007-07-01 | Tokyo Electron Ltd | Substrate heating device and substrate heating method |
| TW200733412A (en) * | 2005-10-19 | 2007-09-01 | Solopower Inc | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW498057B (en) * | 1999-11-25 | 2002-08-11 | Schott Glas | Method and device for annealing flat bodies |
| WO2003005456A1 (en) * | 2001-07-06 | 2003-01-16 | Honda Giken Kogyo Kabushiki Kaisha | Method for forming light-absorbing layer |
| TW200725694A (en) * | 2005-08-24 | 2007-07-01 | Tokyo Electron Ltd | Substrate heating device and substrate heating method |
| TW200733412A (en) * | 2005-10-19 | 2007-09-01 | Solopower Inc | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US20090183675A1 (en) * | 2006-10-13 | 2009-07-23 | Mustafa Pinarbasi | Reactor to form solar cell absorbers |
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