TWI501933B - A semiconductor coated glass, and a semiconductor coated material using the same - Google Patents
A semiconductor coated glass, and a semiconductor coated material using the same Download PDFInfo
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- TWI501933B TWI501933B TW100102341A TW100102341A TWI501933B TW I501933 B TWI501933 B TW I501933B TW 100102341 A TW100102341 A TW 100102341A TW 100102341 A TW100102341 A TW 100102341A TW I501933 B TWI501933 B TW I501933B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
Description
本發明係關於一種作為含有P-N接面之半導體裝置之被覆用而使用之玻璃及使用其之半導體被覆用材料。The present invention relates to a glass used for coating a semiconductor device including a P-N junction and a semiconductor coating material using the same.
一般而言，於矽二極體或電晶體等半導體裝置中，自防止外部氣體污染之觀點而言，使半導體元件之含有P-N接面部之表面藉由含有玻璃之材料而被覆。由此使半導體元件表面得以穩定化，可抑制隨時間之特性劣化。In general, in a semiconductor device such as a germanium diode or a transistor, the surface of the semiconductor element including the P-N junction surface is covered with a material containing glass from the viewpoint of preventing external gas contamination. Thereby, the surface of the semiconductor element is stabilized, and deterioration of characteristics with time can be suppressed.
作為用作半導體被覆用材料之玻璃所要求之特性，可舉出下述特性等：(1)熱膨脹係數適合於半導體之熱膨脹係數，以免於被覆時因與半導體元件之熱膨脹係數差而產生龜裂等；(2)能以低溫(例如900℃以下)進行被覆，以防止半導體元件之特性劣化；(3)不含有對半導體元件表面造成不良影響之鹼成分等雜質；(4)作為半導體元件表面被覆後之電氣特性，具有反向耐壓較高、漏電流較少等之高可靠性。The characteristics required for the glass used as the material for semiconductor coating include the following characteristics: (1) The thermal expansion coefficient is suitable for the thermal expansion coefficient of the semiconductor so as not to cause cracking due to a difference in thermal expansion coefficient from the semiconductor element during coating. (2) can be coated at a low temperature (for example, 900 ° C or lower) to prevent deterioration of characteristics of the semiconductor element; (3) does not contain impurities such as alkali components which adversely affect the surface of the semiconductor element; (4) as a surface of the semiconductor element The electrical characteristics after coating have high reliability such as high reverse withstand voltage and low leakage current.
先前，作為半導體被覆用玻璃，已知ZnO-B2 O3 -SiO2 系等鋅系玻璃、PbO-SiO2 -Al2 O3 系或PbO-SiO2 -Al2 O3 -B2 O3 系等鉛系玻璃。其中，自作業性之觀點而言，PbO-SiO2 -Al2 O3 系及PbO-SiO2 -Al2 O3 -B2 O3 系等鉛系玻璃成為主流(例如，參照專利文獻1~4)。Previously, as the glass for encapsulating a semiconductor, known ZnO-B 2 O 3 -SiO 2 based glass and other zinc-based, PbO-SiO 2 -Al 2 O 3 based or PbO-SiO 2 -Al 2 O 3 -B 2 O 3 Lead-based glass. Among them, from the viewpoint of workability, lead-based glasses such as PbO-SiO 2 -Al 2 O 3 and PbO-SiO 2 -Al 2 O 3 -B 2 O 3 are in the mainstream (see, for example, Patent Document 1~) 4).
專利文獻1：日本專利特公平1-49653號公報Patent Document 1: Japanese Patent Special Fair No. 1-496653
專利文獻2：日本專利特開昭50-129181號公報Patent Document 2: Japanese Patent Laid-Open No. 50-129181
專利文獻3：日本專利特開昭48-43275號公報Patent Document 3: Japanese Patent Laid-Open No. SHO 48-43275
專利文獻4：日本專利特開2008-162881號公報Patent Document 4: Japanese Patent Laid-Open Publication No. 2008-162881
PbO等鉛成分為對環境有害之成分，因此近年來，禁止其用於電氣及電子機器中，並正在推進各種材料之無鉛化發展。對於上述之ZnO-B2 O3 -SiO2 系等鋅系玻璃，亦由於含有少量之鉛成分從而自環境方面考慮為不能使用者。又，即便為無鉛組成，但由於半導體表面被覆後之表面電荷密度以低密度為主流，故難以應對高耐壓用之半導體元件。Since lead components such as PbO are environmentally harmful components, they have been banned from use in electrical and electronic equipment in recent years, and are promoting the development of lead-free materials. The zinc-based glass such as the ZnO-B 2 O 3 -SiO 2 system described above also contains a small amount of lead component and is not user-friendly from the viewpoint of the environment. Moreover, even if it is a lead-free composition, since the surface charge density after the semiconductor surface is covered is low density, it is difficult to cope with a semiconductor element for high withstand voltage.
因此，本發明之第一課題在於，提供一種即便不含有鉛成分但半導體表面被覆後之表面電荷密度亦較大之半導體被覆用玻璃。Therefore, a first object of the present invention is to provide a semiconductor-coated glass which has a large surface charge density after coating a semiconductor surface without containing a lead component.
進而，與鉛系玻璃相比，鋅系玻璃之化學耐久性較差，於玻璃煅燒後之後步驟中對於酸之耐受性相對較弱。因此，有必要於被覆玻璃表面進而形成保護膜而執行後步驟。Further, the zinc-based glass is inferior in chemical durability as compared with the lead-based glass, and is relatively weak in resistance to acid in the subsequent steps after the glass is calcined. Therefore, it is necessary to perform a post-step on the surface of the coated glass to form a protective film.
因此，本發明之第二課題在於，提供一種即便不含有鉛成分但半導體表面被覆後之表面電荷密度亦較大、且化學耐久性亦優異之半導體被覆用玻璃。Therefore, a second object of the present invention is to provide a semiconductor coating glass which has a large surface charge density after being coated with a semiconductor surface and which is excellent in chemical durability, even if it does not contain a lead component.
本發明者經積極研究後發現，藉由具有特性之組成之ZnO-B2 O3 -SiO2 系玻璃可解決上述第一及第二課題，從而提出作為本發明。The inventors of the present invention have found that the first and second problems can be solved by the ZnO-B 2 O 3 -SiO 2 -based glass having a characteristic composition, and have been proposed as the present invention.
即，解決第一課題之本發明之半導體被覆用玻璃之特徵在於：含有以質量%計為50~65%之ZnO、19~28%之B2 O3 、7~15%之SiO2 、3~12%之Al2 O3 、0.1~5%之Bi2 O3 的組成，且實質不含有鉛成分。In other words, the semiconductor-coated glass of the present invention which solves the first problem is characterized in that it contains 50 to 65% by mass of ZnO, 19 to 28% of B 2 O 3 , and 7 to 15% of SiO 2 and 3 The composition of ~12% Al 2 O 3 and 0.1 to 5% Bi 2 O 3 does not substantially contain a lead component.
解決第一課題之本發明之半導體被覆用玻璃中，相對於ZnO-B2 O3 -SiO2 系玻璃而含有特定量之Al2 O3 及Bi2 O3 ，因而該半導體被覆用玻璃係半導體表面被覆後之表面電荷密度較大、適合高耐壓用之半導體元件之被覆者。又，由於實質不含有鉛成分，故對環境造成之負擔較小。In the semiconductor-coated glass of the present invention, which has a specific amount of Al 2 O 3 and Bi 2 O 3 with respect to the ZnO-B 2 O 3 -SiO 2 -based glass, the glass-based semiconductor for semiconductor coating is used. The surface charge density after surface coating is large, and it is suitable for the cover of the semiconductor element for high withstand voltage. Moreover, since the substance is not contained in the essence, the burden on the environment is small.
再者，於解決第一課題之本發明半導體被覆用玻璃中，所謂「實質不含有鉛成分」，並非係指未試圖添加鉛成分作為玻璃成分，且並非係指甚至連不可避免地混入之雜質亦完全排除。客觀而言，係指含有雜質之鉛成分之含量未滿0.1質量%。Further, in the semiconductor-coated glass of the present invention which solves the first problem, the term "substantially does not contain a lead component" does not mean that a lead component is not attempted to be added as a glass component, and does not mean even an impurity which is inevitably mixed. Also completely excluded. Objectively, it means that the content of the lead component containing impurities is less than 0.1% by mass.
又，解決第一課題之本發明之半導體被覆用玻璃之較佳形態為，更含有0~5%之MnO2 、0~5%之Nb2 O5 、0~3%之CeO2 的組成。Further, in a preferred embodiment of the semiconductor-coated glass of the present invention which solves the first problem, the composition further contains 0 to 5% of MnO 2 , 0 to 5% of Nb 2 O 5 , and 0 to 3% of CeO 2 .
又，本發明係關於一種使用解決上述第一課題之本發明之半導體被覆用玻璃所構成之半導體被覆用玻璃粉末、及半導體被覆用材料。Moreover, the present invention relates to a semiconductor coating glass powder comprising a semiconductor coating glass of the present invention which solves the above first problem, and a semiconductor coating material.
該構成之本發明之半導體被覆用玻璃粉末之特徵在於：其係包含上述任一半導體被覆用玻璃。The glass powder for semiconductor coating of the present invention according to the present invention is characterized in that it comprises any of the above-described semiconductor coating glasses.
由於半導體被覆用玻璃為粉末狀，故可容易進行半導體表面之被覆。Since the semiconductor coating glass is in a powder form, coating of the semiconductor surface can be easily performed.
又，該構成之本發明之半導體被覆用材料之特徵在於：其含有上述半導體被覆用玻璃粉末。Moreover, the semiconductor coating material of the present invention having the above configuration is characterized in that it contains the above-mentioned glass powder for semiconductor coating.
又，上述本發明之半導體被覆用材料之較佳形態為，相對於上述半導體被覆用玻璃粉末100質量份，含有選自TiO2 、ZrO2 、ZnO、ZnO-B2 O3 及2ZnO-SiO2 中之至少1種無機粉末0.01~5質量份。Further, in a preferred embodiment of the material for a semiconductor coating of the present invention, it is selected from the group consisting of TiO 2 , ZrO 2 , ZnO, ZnO-B 2 O 3 and 2ZnO-SiO 2 with respect to 100 parts by mass of the glass powder for semiconductor coating. At least one inorganic powder is contained in an amount of 0.01 to 5 parts by mass.
尤其於Si等半導體元件與玻璃之接觸面積非常大之情形時，較理想的是玻璃與Si之熱膨脹係數相近。玻璃之熱膨脹係數係可根據玻璃中所含之結晶成分而調整，但對自玻璃中析出之結晶之量非常難以進行適當控制。因此，若對半導體被覆用玻璃適當添加上述無機粉末，則由於該等無機粉末發揮晶核形成劑之作用，故可較容易地控制所析出之結晶量。其結果可容易調整至所需之熱膨脹係數。Particularly in the case where the contact area between the semiconductor element such as Si and the glass is very large, it is preferable that the thermal expansion coefficient of the glass and Si be similar. The coefficient of thermal expansion of the glass can be adjusted according to the crystal component contained in the glass, but it is very difficult to appropriately control the amount of crystals precipitated from the glass. Therefore, when the inorganic powder is appropriately added to the glass for semiconductor coating, since the inorganic powder functions as a nucleating agent, the amount of crystals precipitated can be easily controlled. The result can be easily adjusted to the desired coefficient of thermal expansion.
又，上述本發明之半導體被覆用材料之另一較佳形態，其特徵為表面電荷密度為7×1011 /cm2 以上。Further, another preferred embodiment of the semiconductor coating material of the present invention is characterized in that the surface charge density is 7 × 10 11 /cm 2 or more.
進而，解決第二課題之本發明之半導體被覆用玻璃之特徵在於：含有以質量%計為40~60%之ZnO、5~25%之B2 O3 、15~35%之SiO2 、3~12%之Al2 O3 的組成，且實質不含有鉛成分。Further, the semiconductor-coated glass of the present invention which solves the second problem is characterized in that it contains 40 to 60% by mass of ZnO, 5 to 25% of B 2 O 3 , and 15 to 35% of SiO 2 and 3 The composition of ~12% Al 2 O 3 does not substantially contain a lead component.
本發明之解決第二課題之半導體被覆用玻璃具有下述特徵：其係相對於ZnO-B2 O3 -SiO2 系玻璃而含有特定量之Al2 O3 者，係藉由嚴格限制各成分之含量而使半導體表面被覆後之表面電荷密度增大、適合高耐壓用之半導體元件之被覆者，且化學耐久性較高。又，由於實質不含有鉛成分，故對環境造成之負擔較小。The semiconductor-coated glass according to the second aspect of the present invention is characterized in that it contains a specific amount of Al 2 O 3 with respect to ZnO-B 2 O 3 -SiO 2 -based glass, and the components are strictly restricted. In addition, the surface charge density after coating the semiconductor surface is increased, and it is suitable for the coating of the semiconductor element for high withstand voltage, and the chemical durability is high. Moreover, since the substance is not contained in the essence, the burden on the environment is small.
再者，於本發明之解決第二課題之半導體被覆用玻璃中，所謂「實質不含有鉛成分」，係指未刻意添加鉛成分作為玻璃成分，而非係指甚至連不可避地混入之雜質亦完全排除。客觀而言，係指包含雜質之鉛成分之含量未滿0.1質量%。Further, in the semiconductor-coated glass according to the second aspect of the present invention, the term "substantially does not contain a lead component" means that a lead component is not intentionally added as a glass component, and not an impurity which is inevitably mixed. Completely excluded. Objectively speaking, it means that the content of the lead component containing impurities is less than 0.1% by mass.
又，解決第二課題之本發明之半導體被覆用玻璃之較佳形態之特徵為，更含有0~5%之Bi2 O3 、0~5%之MnO2 、0~5%之Nb2 O5 、0~3%之CeO2 的組成。Further, a preferred aspect of the semiconductor-coated glass of the present invention which solves the second problem is characterized in that it further contains 0 to 5% of Bi 2 O 3 , 0 to 5% of MnO 2 , and 0 to 5% of Nb 2 O. 5 , 0~3% of the composition of CeO 2 .
又，本發明係關於一種使用解決上述第二課題之半導體被覆用玻璃所構成之半導體被覆用材料。Moreover, the present invention relates to a semiconductor coating material comprising the semiconductor-coated glass which solves the above second problem.
該構成之本發明之半導體被覆用材料之特徵在於：其係含有包含上述半導體被覆用玻璃之玻璃粉末。The semiconductor coating material of the present invention is characterized in that it contains a glass powder containing the glass for semiconductor coating.
藉由使用該半導體被覆用材料而可容易進行半導體表面之被覆。The semiconductor surface can be easily coated by using the semiconductor coating material.
又，上述本發明之半導體被覆用材料之較佳形態之特徵為，相對於上述玻璃粉末100質量份，含有選自TiO2 、ZrO2 、ZnO、ZnO-B2 O3 及2ZnO-SiO2 中之至少1種無機粉末0.01~5質量份。Further, a preferred embodiment of the material for semiconductor coating of the present invention is characterized in that it is selected from the group consisting of TiO 2 , ZrO 2 , ZnO, ZnO-B 2 O 3 and 2ZnO-SiO 2 with respect to 100 parts by mass of the glass powder. At least one inorganic powder is used in an amount of 0.01 to 5 parts by mass.
特別於Si等半導體元件與玻璃之接觸面積非常大之情形時，較理想的是玻璃與Si之熱膨脹係數相近。玻璃之熱膨脹係數係可根據玻璃中所含之結晶成分而調整，但對自玻璃中析出之結晶之量非常難以進行適當的控制。因此，若對半導體被覆用玻璃適當添加上述無機粉末，則由於該等無機粉末發揮晶核形成劑之作用，故可較容易地控制所析出之結晶量。其結果可容易調整至所需之熱膨脹係數。Particularly in the case where the contact area between the semiconductor element such as Si and the glass is very large, it is preferable that the thermal expansion coefficient of the glass and Si be similar. The coefficient of thermal expansion of the glass can be adjusted according to the crystal component contained in the glass, but it is very difficult to appropriately control the amount of crystals precipitated from the glass. Therefore, when the inorganic powder is appropriately added to the glass for semiconductor coating, since the inorganic powder functions as a nucleating agent, the amount of crystals precipitated can be easily controlled. The result can be easily adjusted to the desired coefficient of thermal expansion.
以下，對本發明之半導體被覆用玻璃中之各成分按以上述進行規定之理由加以說明。再者，於以下說明中，只要事先無特別說明，則「%」係指「質量%」。Hereinafter, the reason why each component in the glass for semiconductor coating of the present invention is specified as described above will be described. In the following description, "%" means "% by mass" unless otherwise specified.
以下，將解決第一課題之半導體被覆玻璃、以及使用其所構成之半導體被覆用玻璃粉末及半導體被覆用材料作為第一實施形態進行說明，將解決第二課題之半導體被覆玻璃及使用其所構成之半導體被覆用材料作為第二實施形態進行說明。In the following, the semiconductor-coated glass of the first problem and the semiconductor-coated glass powder and the semiconductor coating material using the same are described as the first embodiment, and the semiconductor-coated glass which solves the second problem is used. The semiconductor coating material will be described as a second embodiment.
本發明第一實施形態之半導體被覆用玻璃之特徵在於：含有以質量%計為50~65%之ZnO、19~28%之B2 O3 、7~15%之SiO2 、3~12%之Al2 O3 、0.1~5%之Bi2 O3 的組成，且實質不含有鉛成分。The semiconductor-coated glass according to the first embodiment of the present invention is characterized in that it contains 50 to 65% by mass of ZnO, 19 to 28% of B 2 O 3 , 7 to 15% of SiO 2 , and 3 to 12%. The composition of Al 2 O 3 and 0.1 to 5% of Bi 2 O 3 does not substantially contain a lead component.
ZnO為使玻璃穩定化之成分。ZnO之含量較佳為50~65%，尤佳為55~63%。若ZnO之含量少於50%，則玻璃之熱膨脹係數變大，於密封半導體元件時會有因與半導體元件之熱膨脹差而產生龜裂之虞。另一方面，若ZnO之含量多於65%，則結晶化會急速推進，故玻璃之流動性不足，從而具有難以被覆半導體元件表面之傾向。ZnO is a component that stabilizes glass. The content of ZnO is preferably from 50 to 65%, particularly preferably from 55 to 63%. When the content of ZnO is less than 50%, the thermal expansion coefficient of the glass becomes large, and when the semiconductor element is sealed, cracks may occur due to a difference in thermal expansion from the semiconductor element. On the other hand, when the content of ZnO is more than 65%, the crystallization proceeds rapidly, so that the fluidity of the glass is insufficient, and it tends to be difficult to coat the surface of the semiconductor element.
B2 O3 為玻璃之網狀形成成分，且為提高流動性之成分。B2 O3 之含量較佳為19~28%，尤佳為20~25%。若B2 O3 之含量少於19%，則結晶性變強而破壞流動性，從而具有難以被覆半導體元件表面之傾向。另一方面，若B2 O3 之含量多於28%，則玻璃之熱膨脹係數變大，於密封半導體元件時會有因與半導體元件之熱膨脹差而產生龜裂之虞。B 2 O 3 is a network forming component of glass and is a component for improving fluidity. The content of B 2 O 3 is preferably from 19 to 28%, particularly preferably from 20 to 25%. When the content of B 2 O 3 is less than 19%, the crystallinity becomes strong and the fluidity is deteriorated, so that it tends to be difficult to coat the surface of the semiconductor element. On the other hand, when the content of B 2 O 3 is more than 28%, the coefficient of thermal expansion of the glass becomes large, and when the semiconductor element is sealed, cracks may occur due to a difference in thermal expansion from the semiconductor element.
SiO2 為玻璃之網狀形成成分，且為提高耐酸性之成分。SiO2 之含量較佳為7~15%，尤佳為9~14%。若SiO2 之含量少於7%，則玻璃之熱膨脹係數變大，於密封半導體元件時會有因與半導體元件之熱膨脹差而產生龜裂之虞。又，玻璃之化學耐久性易降低。若SiO2 之含量多於15%，則難以獲得均質之玻璃。SiO 2 is a network forming component of glass and is a component for improving acid resistance. The content of SiO 2 is preferably from 7 to 15%, particularly preferably from 9 to 14%. When the content of SiO 2 is less than 7%, the coefficient of thermal expansion of the glass becomes large, and when the semiconductor element is sealed, cracks may occur due to a difference in thermal expansion from the semiconductor element. Moreover, the chemical durability of the glass is easily lowered. If the content of SiO 2 is more than 15%, it is difficult to obtain a homogeneous glass.
Al2 O3 為增大玻璃之表面電荷密度之成分。Al2 O3 之含量較佳為3~12%，尤佳為5~10%。若Al2 O3 之含量少於3%，則難以取得上述效果。另一方面，若Al2 O3 之含量多於12%，則玻璃易失透。Al 2 O 3 is a component that increases the surface charge density of the glass. The content of Al 2 O 3 is preferably from 3 to 12%, particularly preferably from 5 to 10%. If the content of Al 2 O 3 is less than 3%, it is difficult to obtain the above effects. On the other hand, if the content of Al 2 O 3 is more than 12%, the glass is easily devitrified.
Bi2 O3 亦為提高玻璃之表面電荷密度之成分。Bi2 O3 之含量較佳為0.1~5%，尤佳為0.5~3%。若Bi2 O3 之含量少於0.1%，則難以取得上述效果。另一方面，若Bi2 O3 之含量多於5%，則玻璃易失透。Bi 2 O 3 is also a component that increases the surface charge density of the glass. The content of Bi 2 O 3 is preferably from 0.1 to 5%, particularly preferably from 0.5 to 3%. When the content of Bi 2 O 3 is less than 0.1%, it is difficult to obtain the above effects. On the other hand, if the content of Bi 2 O 3 is more than 5%, the glass is easily devitrified.
本發明之半導體被覆用玻璃除上述成分外可含有MnO2 、Nb2 O5 、及CeO2 。該等成分具有使半導體元件之漏電流降低之效果。The semiconductor-coated glass of the present invention may contain MnO 2 , Nb 2 O 5 , and CeO 2 in addition to the above components. These components have an effect of lowering the leakage current of the semiconductor element.
MnO2 之含量較佳為0~5%，尤佳為0.1~3%。若MnO2 之含量多於5%，則具有玻璃之熔融性降低之傾向。The content of MnO 2 is preferably from 0 to 5%, particularly preferably from 0.1 to 3%. When the content of MnO 2 is more than 5%, the meltability of glass tends to decrease.
Nb2 O5 之含量較佳為0~5%，尤佳為0.1~3%。若Nb2 O5 之含量多於5%，則具有玻璃之熔融性降低之傾向。The content of Nb 2 O 5 is preferably from 0 to 5%, particularly preferably from 0.1 to 3%. When the content of Nb 2 O 5 is more than 5%, the meltability of glass tends to decrease.
CeO2 之含量較佳為0~3%，尤佳為0.1~2%。若CeO2 之含量多於3%，則玻璃之結晶性過強而具有玻璃之流動性降低之傾向。The content of CeO 2 is preferably from 0 to 3%, particularly preferably from 0.1 to 2%. When the content of CeO 2 is more than 3%, the crystallinity of the glass is too strong, and the fluidity of the glass tends to be lowered.
再者，本發明之半導體被覆用玻璃自環境方面之觀點而言係實質不含有鉛成分(PbO等)。Further, the glass for semiconductor coating of the present invention does not substantially contain a lead component (PbO or the like) from the viewpoint of the environment.
自可容易進行半導體元件表面之被覆之觀點而言，本發明之半導體被覆用玻璃較佳為粉末狀。半導體被覆用玻璃粉末之平均粒徑D50 較佳為25 μm以下，尤佳為15 μm以下。若半導體被覆用玻璃粉末之平均粒徑D50 大於25 μm，則難以實現糊膠化，從而難以均勻地被覆於半導體表面。又，具有藉由電泳之被覆亦變得困難之傾向。再者，平均粒徑D50 之下限雖無特別限定，但實際為0.1 μm以上。The semiconductor coating glass of the present invention is preferably in the form of a powder from the viewpoint that the surface of the semiconductor element can be easily coated. The average particle diameter D 50 of the glass powder for semiconductor coating is preferably 25 μm or less, and particularly preferably 15 μm or less. When the average particle diameter D 50 of the glass powder for semiconductor coating is more than 25 μm, it is difficult to achieve gelatinization, and it is difficult to uniformly coat the surface of the semiconductor. Moreover, it is also difficult to have coating by electrophoresis. Further, the lower limit of the average particle diameter D 50 is not particularly limited, but is actually 0.1 μm or more.
本發明之半導體被覆用材料係含有上述半導體被覆用玻璃粉末者。再者，本發明之半導體被覆用材料亦可係相對於上述半導體被覆用玻璃粉末而含有選自TiO2 、ZrO2 、ZnO、ZnO-B2 O3 、2ZnO-SiO2 中之至少1種無機粉末作為晶核形成劑者。該等無機粉末之含量相對於半導體被覆用玻璃粉末100質量份較佳為0.01~5質量份，尤佳為0.1~3質量份。若無機粉末之含量少於0.01質量份，則析出之結晶量較少而具有難以達成所需之熱膨脹係數之傾向。若無機粉末之含量多於5質量份，則析出之結晶量過多而破壞流動性，從而具有難以進行半導體元件表面之被覆之傾向。The semiconductor coating material of the present invention contains the above-mentioned glass powder for semiconductor coating. In addition, the semiconductor coating material of the present invention may contain at least one inorganic material selected from the group consisting of TiO 2 , ZrO 2 , ZnO, ZnO-B 2 O 3 , and 2ZnO-SiO 2 with respect to the glass powder for semiconductor coating. Powder as a nucleating agent. The content of the inorganic powder is preferably 0.01 to 5 parts by mass, particularly preferably 0.1 to 3 parts by mass, per 100 parts by mass of the glass powder for semiconductor coating. When the content of the inorganic powder is less than 0.01 parts by mass, the amount of crystals precipitated is small, and it tends to be difficult to achieve a desired thermal expansion coefficient. When the content of the inorganic powder is more than 5 parts by mass, the amount of crystals precipitated is too large to impair the fluidity, and it tends to be difficult to coat the surface of the semiconductor element.
再者，具有下述傾向：若上述無機粉末之粒度越小，則自玻璃析出之結晶之粒徑越小且機械強度越大。因此，無機粉末之平均粒徑D50 較佳為5 μm以下，尤佳為3 μm以下。平均粒徑D50 之下限雖無特別限定，但實際為0.1 μm以上。Further, there is a tendency that the smaller the particle size of the inorganic powder, the smaller the particle diameter of the crystal precipitated from the glass and the higher the mechanical strength. Therefore, the average particle diameter D 50 of the inorganic powder is preferably 5 μm or less, and particularly preferably 3 μm or less. The lower limit of the average particle diameter D 50 is not particularly limited, but is actually 0.1 μm or more.
本發明之半導體被覆用材料之表面電荷密度較佳為，對於電壓1000 V之半導體裝置為7×1011 /cm2 以上，對於電壓1500 V以上之半導體裝置為10×1011 /cm2 以上。Surface charge density of the semiconductor of the present invention is preferably coated with materials, the semiconductor device voltage of 1000 V was 7 × 10 11 / cm 2 or more, with the above semiconductor device voltage of 1500 V was 10 × 10 11 / cm 2 or more.
本發明之半導體被覆用材料之熱膨脹係數(30~300℃)係對應半導體元件之熱膨脹係數而於例如20~60×10-7 /℃、進而30~50×10-7 /℃之範圍內適當調整。The coefficient of thermal expansion (30 to 300 ° C) of the semiconductor coating material of the present invention is suitably in the range of, for example, 20 to 60 × 10 -7 / ° C and further 30 to 50 × 10 -7 / ° C in accordance with the thermal expansion coefficient of the semiconductor element. Adjustment.
本發明之半導體被覆用玻璃係可藉由以下方法獲得：調合各氧化物成分之原料粉末而作為一次投料量，以1400℃左右之溫度進行約1小時熔融以使其玻璃化後，進行成形、粉碎、分級。The glass for semiconductor coating of the present invention can be obtained by blending the raw material powder of each oxide component and melting it at a temperature of about 1400 ° C for about one hour to be vitrified as a single charge, and then forming the powder. Crush and grade.
本發明第二實施形態之半導體被覆用玻璃之特徵在於：作為組成，含有以質量%計為40~60%之ZnO、5~25%之B2 O3 、15~35%之SiO2 、3~12%之Al2 O3 ，且實質不含有鉛成分。The semiconductor-coated glass according to the second embodiment of the present invention is characterized in that it contains 40 to 60% by mass of ZnO, 5 to 25% of B 2 O 3 , and 15 to 35% of SiO 2 and 3 as a composition. ~12% Al 2 O 3 , and does not contain lead in nature.
ZnO為使玻璃穩定化之成分。ZnO之含量較佳為40~60%，尤佳為47~55%。若ZnO之含量少於40%，則玻璃熔融時之失透性變強而難以熔融。另一方面，若ZnO之含量多於6o%，則具有耐酸性減弱之傾向。ZnO is a component that stabilizes glass. The content of ZnO is preferably 40 to 60%, particularly preferably 47 to 55%. When the content of ZnO is less than 40%, the devitrification property at the time of glass melting becomes strong and it is difficult to melt. On the other hand, when the content of ZnO is more than 6%, the acid resistance tends to be weakened.
B2 O3 為玻璃之網狀形成成分，且為提高流動性之成分。B2 O3 之含量較佳為5~25%，尤佳為7~18%。若B2 O3 之含量少於5%，則結晶性變強而破壞流動性，從而難以進行對半導體元件表面之被覆。另一方面，若B2 O3 之含量多於25%，則具有熱膨脹係數變大之傾向。又，具有化學耐久性降低之傾向。B 2 O 3 is a network forming component of glass and is a component for improving fluidity. The content of B 2 O 3 is preferably from 5 to 25%, particularly preferably from 7 to 18%. When the content of B 2 O 3 is less than 5%, the crystallinity becomes strong and the fluidity is deteriorated, so that it is difficult to coat the surface of the semiconductor element. On the other hand, when the content of B 2 O 3 is more than 25%, the coefficient of thermal expansion tends to be large. Moreover, it has a tendency to reduce chemical durability.
SiO2 為玻璃之網狀形成成分，且為提高耐酸性之成分。SiO2 之含量較佳為15~35%，尤佳為20~33%。若SiO2 之含量少於15%，則具有化學耐久性較差之傾向。另一方面，若SiO2 之含量多於35%，則熔融時之失透性變強，從而難以獲得均質之玻璃。SiO 2 is a network forming component of glass and is a component for improving acid resistance. The content of SiO 2 is preferably 15 to 35%, particularly preferably 20 to 33%. If the content of SiO 2 is less than 15%, the chemical durability tends to be poor. On the other hand, when the content of SiO 2 is more than 35%, the devitrification property at the time of melting becomes strong, and it is difficult to obtain a homogeneous glass.
Al2 O3 為提高玻璃之表面電荷密度之成分。Al2 O3 之含量較佳為3~12%，尤佳為5~10%。若Al2 O3 之含量少於3%，則難以取得上述效果。另一方面，若Al2 O3 之含量多於12%，則易失透。Al 2 O 3 is a component that increases the surface charge density of the glass. The content of Al 2 O 3 is preferably from 3 to 12%, particularly preferably from 5 to 10%. If the content of Al 2 O 3 is less than 3%, it is difficult to obtain the above effects. On the other hand, if the content of Al 2 O 3 is more than 12%, it is easily devitrified.
本發明之半導體被覆用玻璃中，作為組成，更佳為含有0~5%之Bi2 O3 、0~5%之MnO2 、0~5%之Nb2 O5 、0~3%之CeO2 。In the semiconductor-coated glass of the present invention, it is more preferable to contain 0 to 5% of Bi 2 O 3 , 0 to 5% of MnO 2 , 0 to 5% of Nb 2 O 5 , and 0 to 3% of CeO. 2 .
Bi2 O3 為提高玻璃之表面電荷密度之成分。Bi2 O3 之含量較佳為0~5%，尤佳為0.1~3%。若Bi2 O3 之含量多於5%，則玻璃易失透。Bi 2 O 3 is a component that increases the surface charge density of the glass. The content of Bi 2 O 3 is preferably from 0 to 5%, particularly preferably from 0.1 to 3%. If the content of Bi 2 O 3 is more than 5%, the glass is easily devitrified.
MnO2 、Nb2 O5 、CeO2 為使半導體元件之漏電流降低之成分。MnO 2 , Nb 2 O 5 , and CeO 2 are components that lower the leakage current of the semiconductor element.
MnO2 之含量較佳為0~5%，尤佳為0.1~3%。若MnO2 之含量多於5%，則具有玻璃之熔融性降低之傾向。The content of MnO 2 is preferably from 0 to 5%, particularly preferably from 0.1 to 3%. When the content of MnO 2 is more than 5%, the meltability of glass tends to decrease.
Nb2 O5 之含量較佳為0~5%，尤佳為0.1~3%。若Nb2 O5 之含量多於5%，則具有玻璃之熔融性降低之傾向。The content of Nb 2 O 5 is preferably from 0 to 5%, particularly preferably from 0.1 to 3%. When the content of Nb 2 O 5 is more than 5%, the meltability of glass tends to decrease.
CeO2 之含量較佳為0~3%，尤佳為0.1~2%。若CeO2 之含量多於3%，則玻璃之結晶性過強而具有玻璃之流動性降低之傾向。The content of CeO 2 is preferably from 0 to 3%, particularly preferably from 0.1 to 2%. When the content of CeO 2 is more than 3%, the crystallinity of the glass is too strong, and the fluidity of the glass tends to be lowered.
本發明之半導體被覆用玻璃自環境方面之觀點而言係實質不含有鉛成分(PbO等)。又，較佳為不含有對半導體元件表面造成不良影響之鹼成分(Li2 O、Na2 O、K2 O)。The glass for semiconductor coating of the present invention does not substantially contain a lead component (PbO or the like) from the viewpoint of the environment. Further, it is preferable that the alkali component (Li 2 O, Na 2 O, K 2 O) which adversely affects the surface of the semiconductor element is not contained.
本發明之半導體被覆用玻璃自可容易進行半導體元件表面之被覆之觀點而言，較佳為粉末狀。此時，玻璃粉末之平均粒徑D50 較佳為25 μm以下，尤佳為15 μm以下。若玻璃粉末之平均粒徑D50 大於25 μm，則難以實現用以進行玻璃塗佈之糊膠化。又，電泳塗佈亦變得困難。再者，平均粒徑D50 之下限雖無特別限定，但實際為0.1 μm以上。The semiconductor-coated glass of the present invention is preferably in the form of a powder from the viewpoint that the surface of the semiconductor element can be easily coated. At this time, the average particle diameter D 50 of the glass powder is preferably 25 μm or less, and particularly preferably 15 μm or less. If the average particle diameter D 50 of the glass powder is more than 25 μm, it is difficult to achieve gelatinization for performing glass coating. Moreover, electrophoretic coating also becomes difficult. Further, the lower limit of the average particle diameter D 50 is not particularly limited, but is actually 0.1 μm or more.
本發明之半導體被覆用材料係含有上述半導體被覆用玻璃粉末者。再者，本發明之半導體被覆用材料亦可係相對於上述半導體被覆用玻璃粉末而含有選自TiO2 、ZrO2 、ZnO、ZnO-B2 O3 、2ZnO-SiO2 中之至少1種無機粉末作為晶核形成劑者。該等無機粉末之含量相對於半導體被覆用玻璃粉末100質量份較佳為0.01~5質量份，尤佳為0.1~3質量份。若無機粉末之含量少於0.01質量份，則析出之結晶量較少，從而具有難以達成所需之熱膨脹係數之傾向。若無機粉末之含量多於5質量份，則析出之結晶量過多而破壞流動性，從而具有難以進行半導體元件表面之被覆之傾向。The semiconductor coating material of the present invention contains the above-mentioned glass powder for semiconductor coating. In addition, the semiconductor coating material of the present invention may contain at least one inorganic material selected from the group consisting of TiO 2 , ZrO 2 , ZnO, ZnO-B 2 O 3 , and 2ZnO-SiO 2 with respect to the glass powder for semiconductor coating. Powder as a nucleating agent. The content of the inorganic powder is preferably 0.01 to 5 parts by mass, particularly preferably 0.1 to 3 parts by mass, per 100 parts by mass of the glass powder for semiconductor coating. When the content of the inorganic powder is less than 0.01 parts by mass, the amount of crystals precipitated is small, and it tends to be difficult to achieve a desired coefficient of thermal expansion. When the content of the inorganic powder is more than 5 parts by mass, the amount of crystals precipitated is too large to impair the fluidity, and it tends to be difficult to coat the surface of the semiconductor element.
再者，具有下述傾向：若上述無機粉末之粒度越小，則自玻璃析出之結晶之粒徑越小且機械強度越大。因此，無機粉末之平均粒徑D50 較佳為5 μm以下，尤佳為3 μm以下。平均粒徑D50 之下限雖無特別限定，但實際為0.1 μm以上。Further, there is a tendency that the smaller the particle size of the inorganic powder, the smaller the particle diameter of the crystal precipitated from the glass and the higher the mechanical strength. Therefore, the average particle diameter D 50 of the inorganic powder is preferably 5 μm or less, and particularly preferably 3 μm or less. The lower limit of the average particle diameter D 50 is not particularly limited, but is actually 0.1 μm or more.
本發明之半導體被覆用玻璃之熱膨脹係數(30~300℃)係對應半導體元件之熱膨脹係數而於例如20~60×10-7 /℃、進而30~50×10-7 /℃之範圍內適當調整。The coefficient of thermal expansion (30 to 300 ° C) of the glass for semiconductor coating of the present invention is suitably in the range of, for example, 20 to 60 × 10 -7 / ° C and further 30 to 50 × 10 -7 / ° C in accordance with the thermal expansion coefficient of the semiconductor element. Adjustment.
本發明之半導體被覆用材料之表面電荷密度較佳為，對於電壓1000 V之半導體裝置為7×1011 /cm2 以上，對於電壓1500 V以上之半導體裝置為10×1011 /cm2 以上。再者，表面電荷密度係指藉由實施例中記載之方法而測定之值。Surface charge density of the semiconductor of the present invention is preferably coated with materials, the semiconductor device voltage of 1000 V was 7 × 10 11 / cm 2 or more, with the above semiconductor device voltage of 1500 V was 10 × 10 11 / cm 2 or more. Further, the surface charge density means a value measured by the method described in the examples.
本發明之半導體被覆用玻璃係可藉由以下方法獲得：調合各氧化物成分之原料粉末而作為一次投料量，以1500℃左右之溫度進行約1小時熔融以使其玻璃化後，進行成形(其後，視需要而進行粉碎、分級)。The glass for semiconductor coating of the present invention can be obtained by blending the raw material powders of the respective oxide components and melting them at a temperature of about 1,500 ° C for about one hour to be vitrified as a single charge, and then forming them ( Thereafter, pulverization and classification are carried out as needed.
以下，根據實施例而說明本發明，但本發明並不限定於該等實施例。Hereinafter, the present invention will be described based on examples, but the present invention is not limited to the examples.
表1表示本發明第一實施形態之實施例及比較例。Table 1 shows an example and a comparative example of the first embodiment of the present invention.
以如下方法製作各試樣。首先，以成為表中之玻璃組成之方式調合原料粉末而作為一次投料量，以1400℃之溫度進行1小時熔融以使其玻璃化。繼而，將該熔融玻璃成形為膜狀之後，於球磨機中粉碎，使用350網眼之篩進行分級，獲得半導體被覆用玻璃粉末(半導體被覆用材料)(平均粒徑D50 ：12 μm)。Each sample was produced in the following manner. First, the raw material powder was blended so as to have a glass composition in the table, and it was melted at a temperature of 1400 ° C for 1 hour as a single charge to be vitrified. Then, the molten glass was molded into a film shape, and then pulverized in a ball mill and classified using a 350 mesh sieve to obtain a glass powder for semiconductor coating (material for semiconductor coating) (average particle diameter D 50 : 12 μm).
對所獲得之半導體被覆用玻璃粉末測定熱膨脹係數與表面電荷密度。再者，於實施例6中，測定對半導體被覆用玻璃粉末100質量份添加1質量份ZnO粉末而成者。將其結果示於表1。The thermal expansion coefficient and the surface charge density of the obtained glass powder for semiconductor coating were measured. In addition, in Example 6, it was measured that 1 part by mass of ZnO powder was added to 100 parts by mass of the glass powder for semiconductor coating. The results are shown in Table 1.
熱膨脹係數表示使用膨脹劑而於30~300℃之溫度範圍內所測定之值。The coefficient of thermal expansion indicates a value measured in a temperature range of 30 to 300 ° C using a swelling agent.
表面電荷密度係以如下方法進行測定。首先，將半導體被覆用玻璃粉末分散於有機溶媒中，藉由電泳而使其附著於矽表面以成為固定之膜厚，繼而進行煅燒而形成玻璃層。於玻璃層上形成鋁電極後，使用C-V儀(電容-電壓儀)測定玻璃中電容之變化，計算表面電荷密度。The surface charge density was measured in the following manner. First, the glass powder for semiconductor coating is dispersed in an organic solvent, adhered to the surface of the crucible by electrophoresis to have a fixed film thickness, and then calcined to form a glass layer. After forming an aluminum electrode on the glass layer, the change in capacitance in the glass was measured using a C-V meter (capacitance-voltage meter) to calculate the surface charge density.
由表1顯然可知，實施例1~6之試樣之表面電荷密度高達8~18。此係大致等同於PbO-SiO2 -Al2 O3 系或PbO-SiO2 -Al2 O3 -B2 O3 系之鉛系玻璃之表面電荷密度。因此，實施例1~6之半導體被覆用材料係適合高耐壓用之半導體元件之被覆者。As apparent from Table 1, the surface charge densities of the samples of Examples 1 to 6 were as high as 8 to 18. This is roughly equivalent to the surface charge density of the lead-based glass of the PbO-SiO 2 -Al 2 O 3 system or the PbO-SiO 2 -Al 2 O 3 -B 2 O 3 system. Therefore, the materials for semiconductor coating of Examples 1 to 6 are suitable for those of the semiconductor element for high withstand voltage.
另一方面可知，比較例1及2之試樣之表面電荷密度較低，故不適合高耐壓用之半導體元件之被覆。On the other hand, it was found that the samples of Comparative Examples 1 and 2 have a low surface charge density, and thus are not suitable for coating of a semiconductor element for high withstand voltage.
表2表示本發明之第二實施形態之實施例及比較例。Table 2 shows an example and a comparative example of the second embodiment of the present invention.
各試樣係以如下方式製作。首先，以成為表中之玻璃組成之方式調合原料粉末而作為一次投料量，以1500℃之溫度進行1小時熔融而使其玻璃化。繼而，將該熔融玻璃成形為膜狀之後，於球磨機中粉碎，使用350網眼之篩進行分級，獲得半導體被覆用玻璃粉末(平均粒徑D50 ：12 μm)。Each sample was produced in the following manner. First, the raw material powder was blended so as to have a glass composition in the table, and it was melted at a temperature of 1500 ° C for 1 hour as a primary charge to be vitrified. Then, the molten glass was molded into a film shape, and then pulverized in a ball mill and classified using a 350 mesh sieve to obtain a glass powder for semiconductor coating (average particle diameter D 50 : 12 μm).
對所獲得之半導體被覆用玻璃粉末測定熱膨脹係數、表面電荷密度、及耐酸性。將其結果示於表2。The obtained glass powder for semiconductor coating was measured for thermal expansion coefficient, surface charge density, and acid resistance. The results are shown in Table 2.
熱膨脹係數表示使用膨脹劑而於30~300℃之溫度範圍內所測定之值。The coefficient of thermal expansion indicates a value measured in a temperature range of 30 to 300 ° C using a swelling agent.
表面電荷密度係以如下方法測定。首先，將玻璃粉末分散於有機溶媒中，藉由電泳而使其附著於矽基板表面以成為固定之膜厚，繼而進行煅燒而形成玻璃層。於玻璃層上形成鋁電極後，使用C-V儀測定玻璃中電容之變化，計算表面電荷密度。The surface charge density was measured by the following method. First, the glass powder is dispersed in an organic solvent, adhered to the surface of the ruthenium substrate by electrophoresis to have a fixed film thickness, and then calcined to form a glass layer. After the aluminum electrode was formed on the glass layer, the change in capacitance in the glass was measured using a C-V meter to calculate the surface charge density.
耐酸性係以如下方式進行評價。首先，將玻璃粉末壓製成型為直徑20 mm、厚度4 mm左右之大小，並煅燒而製作顆粒狀試樣，將該試樣於30%硝酸中以25℃浸漬1分鐘後，根據質量減少而計算每單位面積之質量變化，評價耐酸性。The acid resistance was evaluated in the following manner. First, the glass powder is compression-molded into a size of 20 mm in diameter and a thickness of about 4 mm, and calcined to prepare a pellet sample, which is immersed in 30% nitric acid at 25 ° C for 1 minute, and then calculated according to mass reduction. The acidity per unit area was evaluated to evaluate acid resistance.
由表1顯然可知，實施例1~6之試樣之表面電荷密度高達14~18。此係等同於或大於PbO-SiO2 -Al2 O3 系或PbO-SiO2 -Al2 O3 -B2 O3 系等之鉛系玻璃之表面電荷密度。又可知，耐酸性試驗引起之質量減少為0.6 mg/cm2 以下，故耐酸性優異。因此，實施例1~6之半導體被覆用材料係適合高耐壓用之半導體元件之被覆者。As apparent from Table 1, the surface charge densities of the samples of Examples 1 to 6 were as high as 14 to 18. This is equivalent to or greater than the surface charge density of the lead glass of the PbO-SiO 2 -Al 2 O 3 system or the PbO-SiO 2 -Al 2 O 3 -B 2 O 3 system. Further, it was found that the mass loss due to the acid resistance test was 0.6 mg/cm 2 or less, so that the acid resistance was excellent. Therefore, the materials for semiconductor coating of Examples 1 to 6 are suitable for those of the semiconductor element for high withstand voltage.
另一方面可知，比較例1及2之試樣之表面電荷密度低至6以下，故不適合高耐壓用之半導體元件之被覆。又，耐酸性試驗引起之質量減少為3.5 mg/cm2 以上，故耐酸性亦較差。On the other hand, it was found that the samples of Comparative Examples 1 and 2 had a surface charge density as low as 6 or less, and thus were not suitable for coating of a semiconductor element for high withstand voltage. Further, since the mass loss caused by the acid resistance test is 3.5 mg/cm 2 or more, the acid resistance is also poor.
以上參照特定之態樣詳細說明了本發明，但本領域技術人員明確瞭解，不脫離本發明之精神及範圍而可進行各種變更及修正。The present invention has been described in detail above with reference to the specific embodiments thereof.
再者，本申請案係基於2010年1月28日申請之日本專利申請(特願2010-016552)及2010年9月1日申請之日本專利申請(特願2010-195611)，其全部內容因引用而被援用。又，此處引用之全部參照整體併入本文中。In addition, the present application is based on a Japanese patent application filed on Jan. 28, 2010 (Japanese Patent Application No. 2010-016552) and Japanese Patent Application No. 2010-195611 filed on Sep. Referenced and used. Further, all references cited herein are incorporated herein in their entirety.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58125638A (en) * | 1982-01-21 | 1983-07-26 | Toshiba Corp | Glass composition for coating semiconductor |
| JPS61242928A (en) * | 1985-04-17 | 1986-10-29 | Nippon Electric Glass Co Ltd | Semiconductor coating glass |
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| JP3534257B2 (en) * | 1993-12-28 | 2004-06-07 | 日本電気硝子株式会社 | Sealing material |
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