TWI501314B - - Google Patents
Info
- Publication number
- TWI501314B TWI501314B TW102140584A TW102140584A TWI501314B TW I501314 B TWI501314 B TW I501314B TW 102140584 A TW102140584 A TW 102140584A TW 102140584 A TW102140584 A TW 102140584A TW I501314 B TWI501314 B TW I501314B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210560146.2A CN103021934B (en) | 2012-12-20 | 2012-12-20 | A kind of formation method of through hole or contact hole |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201426860A TW201426860A (en) | 2014-07-01 |
| TWI501314B true TWI501314B (en) | 2015-09-21 |
Family
ID=47970381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102140584A TW201426860A (en) | 2012-12-20 | 2013-11-07 | Method for forming through hole or contact hole |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103021934B (en) |
| TW (1) | TW201426860A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356297B (en) * | 2015-07-16 | 2019-02-22 | 中微半导体设备(上海)有限公司 | A kind of lithographic method of tantalum nitride TaN film |
| CN106653594B (en) * | 2015-10-30 | 2019-05-28 | 中微半导体设备(上海)股份有限公司 | A method of for improving side wall etching effect in depth-width ratio silicon etching |
| CN106811752B (en) * | 2015-12-02 | 2019-10-25 | 中微半导体设备(上海)股份有限公司 | Form method, the method for etching plasma of double damask structure |
| CN107526218B (en) * | 2016-06-22 | 2020-07-07 | 群创光电股份有限公司 | Display panel |
| US9865484B1 (en) * | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| CN110190027A (en) * | 2019-07-02 | 2019-08-30 | 武汉新芯集成电路制造有限公司 | The production method of semiconductor devices |
| CN110739269B (en) * | 2019-10-25 | 2020-11-20 | 武汉新芯集成电路制造有限公司 | Semiconductor device and method of forming the same |
| CN113035694A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Etching method |
| CN112216600A (en) * | 2020-10-13 | 2021-01-12 | 西安交通大学 | Method for preparing large-area SiC nano-pillar array rapidly, controllably and at low cost |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200601452A (en) * | 2004-03-19 | 2006-01-01 | Lam Res Corp | Methods for the optimization of substrate etching in a plasma processing system |
| TW201128702A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Method for plasma etching a silicon-containing insulating layer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
| KR100253080B1 (en) * | 1997-06-25 | 2000-04-15 | 윤종용 | Method for and apparatus of semiconductor dry etching |
| US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| KR100685953B1 (en) * | 2002-08-20 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | Method for Forming Metal Lines in Liquid Crystal Display Device |
| US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
| US20050106888A1 (en) * | 2003-11-14 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co. | Method of in-situ damage removal - post O2 dry process |
| CN102737983B (en) * | 2012-07-05 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Method for forming semiconductor structure |
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2012
- 2012-12-20 CN CN201210560146.2A patent/CN103021934B/en active Active
-
2013
- 2013-11-07 TW TW102140584A patent/TW201426860A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200601452A (en) * | 2004-03-19 | 2006-01-01 | Lam Res Corp | Methods for the optimization of substrate etching in a plasma processing system |
| TW201128702A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Method for plasma etching a silicon-containing insulating layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103021934A (en) | 2013-04-03 |
| TW201426860A (en) | 2014-07-01 |
| CN103021934B (en) | 2015-10-21 |