TWI501286B - 離子佈植機 - Google Patents
離子佈植機 Download PDFInfo
- Publication number
- TWI501286B TWI501286B TW103122293A TW103122293A TWI501286B TW I501286 B TWI501286 B TW I501286B TW 103122293 A TW103122293 A TW 103122293A TW 103122293 A TW103122293 A TW 103122293A TW I501286 B TWI501286 B TW I501286B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion beam
- ion
- implanter
- parallel
- degrees
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 414
- 230000003287 optical effect Effects 0.000 claims description 138
- 238000009826 distribution Methods 0.000 claims description 34
- 239000011148 porous material Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 119
- 239000007943 implant Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000002902 bimodal effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103122293A TWI501286B (zh) | 2014-06-27 | 2014-06-27 | 離子佈植機 |
| KR1020140126565A KR20160001565A (ko) | 2014-06-27 | 2014-09-23 | 이온 주입기 |
| KR1020140173090A KR20160001585A (ko) | 2014-06-27 | 2014-12-04 | 이온 주입 방법 |
| CN201510298722.4A CN105280466B (zh) | 2014-06-27 | 2015-06-03 | 离子布植机 |
| KR1020150091253A KR20160001697A (ko) | 2014-06-27 | 2015-06-26 | 이온 주입 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103122293A TWI501286B (zh) | 2014-06-27 | 2014-06-27 | 離子佈植機 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI501286B true TWI501286B (zh) | 2015-09-21 |
| TW201601187A TW201601187A (zh) | 2016-01-01 |
Family
ID=54608166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103122293A TWI501286B (zh) | 2014-06-27 | 2014-06-27 | 離子佈植機 |
Country Status (3)
| Country | Link |
|---|---|
| KR (3) | KR20160001565A (ko) |
| CN (1) | CN105280466B (ko) |
| TW (1) | TWI501286B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI523084B (zh) | 2014-11-11 | 2016-02-21 | 漢辰科技股份有限公司 | 離子佈植法 |
| US10163657B1 (en) * | 2017-08-25 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422490A (en) * | 1992-06-29 | 1995-06-06 | Sumitomo Electric Industries, Ltd. | Focused ion beam implantation apparatus |
| TW521295B (en) * | 1999-12-13 | 2003-02-21 | Semequip Inc | Ion implantation ion source, system and method |
| TWI293767B (en) * | 2000-10-30 | 2008-02-21 | Varian Semiconductor Equipment | Bi mode ion implantation with non-parallel ion beams |
| TW200908057A (en) * | 2007-04-10 | 2009-02-16 | Sen Corp An Shi And Axcelis Company | Ion implantation apparatus and method of converging/shaping ion beam used therefor |
| US8164070B2 (en) * | 2008-12-05 | 2012-04-24 | Nissin Ion Equipment Co., Ltd. | Collimator magnet for ion implantation system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3272441B2 (ja) * | 1993-01-20 | 2002-04-08 | 株式会社アルバック | イオン加速装置 |
| US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| JP4288288B2 (ja) * | 2007-03-29 | 2009-07-01 | 三井造船株式会社 | イオン注入装置 |
| US20100065761A1 (en) * | 2008-09-17 | 2010-03-18 | Axcelis Technologies, Inc. | Adjustable deflection optics for ion implantation |
| JP5041260B2 (ja) * | 2010-06-04 | 2012-10-03 | 日新イオン機器株式会社 | イオン注入装置 |
-
2014
- 2014-06-27 TW TW103122293A patent/TWI501286B/zh active
- 2014-09-23 KR KR1020140126565A patent/KR20160001565A/ko active Search and Examination
- 2014-12-04 KR KR1020140173090A patent/KR20160001585A/ko active Search and Examination
-
2015
- 2015-06-03 CN CN201510298722.4A patent/CN105280466B/zh active Active
- 2015-06-26 KR KR1020150091253A patent/KR20160001697A/ko unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422490A (en) * | 1992-06-29 | 1995-06-06 | Sumitomo Electric Industries, Ltd. | Focused ion beam implantation apparatus |
| TW521295B (en) * | 1999-12-13 | 2003-02-21 | Semequip Inc | Ion implantation ion source, system and method |
| TWI293767B (en) * | 2000-10-30 | 2008-02-21 | Varian Semiconductor Equipment | Bi mode ion implantation with non-parallel ion beams |
| TW200908057A (en) * | 2007-04-10 | 2009-02-16 | Sen Corp An Shi And Axcelis Company | Ion implantation apparatus and method of converging/shaping ion beam used therefor |
| US8164070B2 (en) * | 2008-12-05 | 2012-04-24 | Nissin Ion Equipment Co., Ltd. | Collimator magnet for ion implantation system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105280466A (zh) | 2016-01-27 |
| KR20160001565A (ko) | 2016-01-06 |
| KR20160001697A (ko) | 2016-01-06 |
| CN105280466B (zh) | 2019-07-09 |
| TW201601187A (zh) | 2016-01-01 |
| KR20160001585A (ko) | 2016-01-06 |
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