TWI500103B - Semiconductor equipment - Google Patents
Semiconductor equipment Download PDFInfo
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- TWI500103B TWI500103B TW102125788A TW102125788A TWI500103B TW I500103 B TWI500103 B TW I500103B TW 102125788 A TW102125788 A TW 102125788A TW 102125788 A TW102125788 A TW 102125788A TW I500103 B TWI500103 B TW I500103B
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Description
本發明係有關於一種半導體設備，特別是有關於一種具有自動化清潔功能的半導體設備。The present invention relates to a semiconductor device, and more particularly to a semiconductor device having an automated cleaning function.
半導體設備普遍應用於半導體元件之生產，半導體設備通常具有一反應室，半導體製程所需之反應氣體可藉由反應室之氣體噴頭流入反應室內部。經過數次半導體製程後，沈積物或污染物可能會附著於反應室內部而影響製程結果及製程良率。Semiconductor devices are commonly used in the production of semiconductor devices. A semiconductor device usually has a reaction chamber, and a reaction gas required for the semiconductor process can flow into the reaction chamber through a gas nozzle of the reaction chamber. After several semiconductor processes, deposits or contaminants may adhere to the interior of the reaction chamber and affect process results and process yield.
反應室內部之沈積物或污染物一般可藉由通入特定反應氣體進行清除。或者反應室內部之沈積物或污染物也可藉由人工打開反應室進行清除。然而，將特定反應氣體通入反應室內部，進行沈積物或污染物之清除通常效果不佳，而藉由人工打開反應室進行沈積物或污染物之清除通常會造成維修時間過長、製程良率不穩定等不良結果。Deposits or contaminants inside the reaction chamber can generally be removed by passing a specific reaction gas. Or deposits or contaminants inside the reaction chamber can be removed by manually opening the reaction chamber. However, it is usually not effective to pass specific reaction gases into the interior of the reaction chamber for removal of deposits or contaminants. The removal of deposits or contaminants by manually opening the reaction chamber usually results in long maintenance time and good process. Poor results such as unstable rate.
鑑於上述先前技術所存在的缺點，有必要提出一種具有自動化清潔功能的半導體設備，該半導體設備可藉由清潔刷頭清除附著於反應室內部之殘留物。In view of the shortcomings of the prior art described above, it is necessary to provide a semiconductor device having an automatic cleaning function that removes residues adhering to the inside of the reaction chamber by the cleaning brush head.
本發明欲解決的問題為提供一種具有自動化清潔功能的半導體設備，該半導體設備可藉由清潔刷頭清除附著於反應室內部之殘留物。The problem to be solved by the present invention is to provide a semiconductor device having an automatic cleaning function which can remove residue adhering to the inside of the reaction chamber by a cleaning brush head.
為解決上述的問題，本發明提出一種半導體設備，該半導體設備包含一反應室、一可動承座以及至少一清潔刷頭。反應室內部具有至少一待清潔部分；可動承座設置於反應室之內部，可動承座可承載一晶圓承座；清潔刷頭可接觸待清潔部分，且該清潔刷頭可相對於待清潔部分進行運動，藉以清除附著於待清潔部分之殘留物。In order to solve the above problems, the present invention provides a semiconductor device including a reaction chamber, a movable holder, and at least one cleaning brush head. The reaction chamber has at least one portion to be cleaned; the movable socket is disposed inside the reaction chamber, the movable socket can carry a wafer holder; the cleaning brush can contact the portion to be cleaned, and the cleaning brush can be cleaned relative to the portion to be cleaned Part of the movement is performed to remove the residue attached to the portion to be cleaned.
本發明之半導體設備可藉由清潔刷頭清除附著於反應室內部之殘留物，由於本發明之半導體設備不需打開反應室，即可藉由清潔刷頭清除附著於反應室內部之殘留物，因此，可降低半導體設備之維修時間，增進製程良率。The semiconductor device of the present invention can remove the residue adhering to the inside of the reaction chamber by the cleaning brush head. Since the semiconductor device of the present invention does not need to open the reaction chamber, the residue attached to the reaction chamber can be removed by the cleaning brush head. Therefore, the maintenance time of the semiconductor device can be reduced, and the process yield can be improved.
200‧‧‧半導體設備200‧‧‧Semiconductor equipment
210‧‧‧反應室210‧‧‧Reaction room
211‧‧‧門閥211‧‧‧Door valve
212‧‧‧第三框架212‧‧‧ Third Framework
213‧‧‧第二框架213‧‧‧ second framework
214‧‧‧第一框架214‧‧‧ first frame
220‧‧‧可動承座220‧‧‧ movable seat
230‧‧‧晶圓承座230‧‧‧ Wafer bearing
231‧‧‧具有清潔刷頭之承座231‧‧‧The seat with a clean brush head
240‧‧‧機器手臂240‧‧‧Machine arm
241‧‧‧清潔裝置241‧‧‧ cleaning device
242‧‧‧清潔裝置242‧‧‧ cleaning device
281‧‧‧伸縮導管281‧‧‧ Telescopic catheter
290‧‧‧傳動裝置290‧‧‧Transmission
291‧‧‧直線傳動裝置291‧‧‧Linear transmission
292‧‧‧馬達292‧‧‧Motor
293‧‧‧齒輪組293‧‧‧ Gear Set
第一圖顯示本發明一較佳實施例之半導體設備之示意圖。The first figure shows a schematic diagram of a semiconductor device in accordance with a preferred embodiment of the present invention.
第二A圖顯示第一圖中，半導體設備之一使用範例之示意圖。The second A diagram shows a schematic diagram of an example of the use of one of the semiconductor devices in the first figure.
第二B圖顯示第一圖中，半導體設備之另一使用範例之示意圖。The second B diagram shows a schematic diagram of another use example of the semiconductor device in the first figure.
第二C圖顯示第一圖中，半導體設備之又一使用範例之示意圖。The second C diagram shows a schematic diagram of another use example of the semiconductor device in the first figure.
本發明的一些實施例將詳細描述如下。然而，除了如下描述外，本發明還可以廣泛地在其他的實施例施行，且本發明的範圍並不受實 施例之限定，其以之後的專利範圍為準。再者，為提供更清楚的描述及更易理解本發明，圖式內各部分並沒有依照其相對尺寸繪圖，某些尺寸與其他相關尺度相比已經被誇張；不相關之細節部分也未完全繪出，以求圖式的簡潔。Some embodiments of the invention are described in detail below. However, the present invention can be widely applied to other embodiments in addition to the following description, and the scope of the present invention is not The definition of the embodiment is subject to the scope of the patents that follow. Further, in order to provide a clearer description and a better understanding of the present invention, the various parts of the drawings are not drawn according to their relative dimensions, and some dimensions have been exaggerated compared to other related dimensions; the irrelevant details are not fully drawn. Out, in order to make the schema simple.
第一圖顯示本發明一較佳實施例之半導體設備200之示意圖。半導體設備200包含一反應室210、一可動承座220、一門閥211以及一機器手臂240。其中，反應室210包含一氣體噴頭(showerhead)，半導體製程所需之反應氣體可藉由氣體噴頭流入反應室內部，氣體噴頭可設置於反應室210之上部(為簡化圖示，圖中並未繪出氣體噴頭)，可動承座220設置於反應室210之內部，可動承座220可承載一晶圓承座(susceptor)230，該晶圓承座230可承載至少一晶圓。可動承座220可使晶圓承座230旋轉或垂直運動。The first figure shows a schematic diagram of a semiconductor device 200 in accordance with a preferred embodiment of the present invention. The semiconductor device 200 includes a reaction chamber 210, a movable holder 220, a gate valve 211, and a robot arm 240. The reaction chamber 210 includes a gas shower head. The reaction gas required for the semiconductor process can flow into the reaction chamber through the gas nozzle, and the gas nozzle can be disposed on the upper portion of the reaction chamber 210 (for simplicity of illustration, the figure does not The gas nozzle is depicted. The movable bearing 220 is disposed inside the reaction chamber 210. The movable bearing 220 can carry a wafer holder 230, which can carry at least one wafer. The movable socket 220 can rotate or vertically move the wafer holder 230.
半導體設備200進一步包含一第一框架214、一第二框架213、一第三框架212、一傳動裝置290以及一伸縮導管281。其中，傳動裝置290包含一直線傳動裝置291，該直線傳動裝置291設置於第一框架214與第二框架213之間，藉由該直線傳動裝置291，第二框架213可相對於第一框架214垂直運動。可動承座220設置於第二框架213，當第二框架213垂直運動時，可動承座220亦進行垂直運動。伸縮導管281設置於第三框架212與第二框架213之間，伸縮導管281可避免反應室210內部的氣體洩漏至外界。傳動裝置290包含一旋轉傳動裝置，本實施例中，旋轉傳動裝置是由一馬達292與一齒輪組293所構成，馬達292之動力可藉由齒輪組293傳遞至可動承座220，使得可動承座220進行旋轉運動。The semiconductor device 200 further includes a first frame 214, a second frame 213, a third frame 212, a transmission 290, and a telescopic duct 281. The transmission device 290 includes a linear transmission device 291 disposed between the first frame 214 and the second frame 213. The linear motion device 291 can be perpendicular to the first frame 214. motion. The movable bearing 220 is disposed on the second frame 213. When the second frame 213 is vertically moved, the movable bearing 220 also performs vertical movement. The telescopic duct 281 is disposed between the third frame 212 and the second frame 213, and the telescopic duct 281 can prevent the gas inside the reaction chamber 210 from leaking to the outside. The transmission device 290 includes a rotation transmission device. In this embodiment, the rotation transmission device is composed of a motor 292 and a gear set 293. The power of the motor 292 can be transmitted to the movable bearing 220 through the gear set 293, so that the movable bearing can be moved. The seat 220 performs a rotary motion.
第二A圖顯示第一圖中，半導體設備200之一使用範例之示意圖。經過數次半導體製程後，沈積物或污染物可能會附著於反應室210內部之待清潔部分。如第二A圖所示，此時，待清潔部分位於反應室210之上部，例如，待清潔部分包含前述之氣體噴頭。具有清潔刷頭之承座231可藉由機器手臂240移至反應室210之內部，置於可動承座220之上；接著，可動承座220垂直移動，使得承座231之清潔刷頭接觸前述之待清潔部分；然後，可動承座220進行旋轉，使得清潔刷頭相對於待清潔部分運動，藉以清除附著於待清潔部分之沈積物或污染物。完成上述清潔步驟後，可進一步將適當氣體通入反應室210內部，藉以清除相關粉塵(particle)。另外，也可以對反應室210內部進行適當時間之高溫烘烤，藉以進一步清除相關污染物。The second A diagram shows a schematic diagram of an example of the use of one of the semiconductor devices 200 in the first figure. After several semiconductor processes, deposits or contaminants may adhere to the portion of the reaction chamber 210 to be cleaned. As shown in the second A diagram, at this time, the portion to be cleaned is located above the reaction chamber 210, for example, the portion to be cleaned includes the gas nozzle described above. The holder 231 having the cleaning head can be moved to the inside of the reaction chamber 210 by the robot arm 240 and placed on the movable holder 220. Then, the movable holder 220 is vertically moved, so that the cleaning head of the holder 231 contacts the aforementioned The portion to be cleaned; then, the movable socket 220 is rotated to move the cleaning head relative to the portion to be cleaned, thereby removing deposits or contaminants attached to the portion to be cleaned. After the above cleaning step is completed, a suitable gas can be further introduced into the interior of the reaction chamber 210 to remove the associated particles. In addition, the interior of the reaction chamber 210 can also be baked at a high temperature for a suitable time to further remove the relevant contaminants.
第二B圖顯示第一圖中，半導體設備200之另一使用範例之示意圖。經過數次半導體製程後，沈積物或污染物可能會附著於反應室210內部之待清潔部分。如第二B圖所示，此時，待清潔部分位於210反應室之上部與下部，例如，待清潔部分可包含前述之氣體噴頭與晶圓承座230。首先，開啟門閥211，藉由機器手臂240將具有清潔刷頭之清潔裝置241移至反應室210之內部，使得清潔刷頭接觸待清潔部分。清潔裝置241具有驅動裝置，該驅動裝置可使清潔刷頭旋轉或移動，藉以清除附著於待清潔部分之沈積物或污染物。清潔裝置241也可直接設置於機器手臂240，或者清潔裝置241可以是一獨立裝置，該清潔裝置241可藉由機器手臂240移至待清潔部分。The second B diagram shows a schematic diagram of another use example of the semiconductor device 200 in the first figure. After several semiconductor processes, deposits or contaminants may adhere to the portion of the reaction chamber 210 to be cleaned. As shown in FIG. B, at this time, the portion to be cleaned is located at the upper and lower portions of the 210 reaction chamber. For example, the portion to be cleaned may include the gas nozzle and wafer holder 230 described above. First, the gate valve 211 is opened, and the cleaning device 241 having the cleaning brush head is moved to the inside of the reaction chamber 210 by the robot arm 240 so that the cleaning brush head contacts the portion to be cleaned. The cleaning device 241 has a driving device that can rotate or move the cleaning brush head to remove deposits or contaminants attached to the portion to be cleaned. The cleaning device 241 can also be disposed directly to the robotic arm 240, or the cleaning device 241 can be a separate device that can be moved by the robotic arm 240 to the portion to be cleaned.
第二C圖顯示第一圖中，半導體設備200之又一使用範例之 示意圖。經過數次半導體製程後，沈積物或污染物可能會附著於反應室210內部之待清潔部分。如第二C圖所示，此時，待清潔部分位於210反應室之下部，例如，待清潔部分可包含晶圓承座230。首先，開啟門閥211，藉由機器手臂240將具有清潔刷頭之清潔裝置242移至反應室210之內部，使得清潔刷頭接觸待清潔部分。然後，可動承座220進行旋轉，使得清潔刷頭相對於待清潔部分運動，藉以清除附著於待清潔部分之沈積物或污染物。清潔裝置242也可直接設置於機器手臂240，或者清潔裝置242可以是一獨立裝置，該清潔裝置242可藉由機器手臂240移至待清潔部分。The second C diagram shows another example of the use of the semiconductor device 200 in the first figure. schematic diagram. After several semiconductor processes, deposits or contaminants may adhere to the portion of the reaction chamber 210 to be cleaned. As shown in FIG. 2C, at this time, the portion to be cleaned is located below the 210 reaction chamber, and for example, the portion to be cleaned may include the wafer holder 230. First, the gate valve 211 is opened, and the cleaning device 242 having the cleaning brush head is moved to the inside of the reaction chamber 210 by the robot arm 240 so that the cleaning brush head contacts the portion to be cleaned. Then, the movable socket 220 is rotated to move the cleaning head relative to the portion to be cleaned, thereby removing deposits or contaminants attached to the portion to be cleaned. The cleaning device 242 can also be disposed directly to the robotic arm 240, or the cleaning device 242 can be a separate device that can be moved by the robotic arm 240 to the portion to be cleaned.
本發明之半導體設備可藉由清潔刷頭清除附著於反應室內部之殘留物，由於本發明之半導體設備不需打開反應室，即可藉由清潔刷頭清除附著於反應室內部之殘留物，因此，可降低半導體設備之維修時間，增進製程良率。The semiconductor device of the present invention can remove the residue adhering to the inside of the reaction chamber by the cleaning brush head. Since the semiconductor device of the present invention does not need to open the reaction chamber, the residue attached to the reaction chamber can be removed by the cleaning brush head. Therefore, the maintenance time of the semiconductor device can be reduced, and the process yield can be improved.
本發明另一較佳實施例提供一種半導體設備之清潔方法，該清潔方法包含下列步驟。請參考第二A圖至第二C圖，首先，提供一半導體設備，該半導體設備具有一反應室，其中，至少一待清潔部分位於該反應室之內部；然後，提供至少一清潔刷頭，該清潔刷頭可接觸待清潔部分，且該清潔刷頭可相對於待清潔部分進行運動，藉以清除附著於待清潔部分之一殘留物。完成上述清潔步驟後，可進一步將適當氣體通入反應室210內部，藉以清除相關粉塵(particle)。另外，也可以對反應室210內部進行適當時間之高溫烘烤，藉以進一步清除相關污染物。Another preferred embodiment of the present invention provides a method of cleaning a semiconductor device, the cleaning method comprising the following steps. Referring to FIGS. 2A to 2C, firstly, a semiconductor device is provided, the semiconductor device having a reaction chamber, wherein at least one portion to be cleaned is located inside the reaction chamber; and then, at least one cleaning brush head is provided. The cleaning brush head can contact the portion to be cleaned, and the cleaning brush head can be moved relative to the portion to be cleaned, thereby removing residue adhering to one of the portions to be cleaned. After the above cleaning step is completed, a suitable gas can be further introduced into the interior of the reaction chamber 210 to remove the associated particles. In addition, the interior of the reaction chamber 210 can also be baked at a high temperature for a suitable time to further remove the relevant contaminants.
如第二A圖所示，此時，待清潔部分位於反應室210之上部，且清潔刷頭設置於一承座231，承座231可垂直移動，使得清潔刷頭接觸待 清潔部分，且承座231可旋轉，使得清潔刷頭相對於待清潔部分運動，藉以清除附著於待清潔部分之該殘留物。本實施例中，待清潔部分包含一氣體噴頭(showerhead)，但並不以此為限。As shown in FIG. 2A, at this time, the portion to be cleaned is located above the reaction chamber 210, and the cleaning brush head is disposed on a socket 231, and the socket 231 can be vertically moved, so that the cleaning brush head is in contact with The cleaning portion is cleaned, and the holder 231 is rotatable such that the cleaning head moves relative to the portion to be cleaned, thereby removing the residue attached to the portion to be cleaned. In this embodiment, the portion to be cleaned includes a gas shower head (shower head), but is not limited thereto.
如第二B圖所示，清潔刷頭設置於一清潔裝置241，清潔裝置241具有一驅動裝置，且該驅動裝置可使清潔刷頭旋轉或移動。本實施例中，清潔裝置係藉由一機器手臂移至反應室210之內部，使得清潔刷頭接觸待清潔部分，但並不以此為限，清潔刷頭也可以設置於該機器手臂，該機器手臂可使清潔刷頭接觸待清潔部分。As shown in FIG. B, the cleaning brush head is disposed on a cleaning device 241 having a driving device that can rotate or move the cleaning brush head. In this embodiment, the cleaning device is moved to the inside of the reaction chamber 210 by a robot arm, so that the cleaning brush head contacts the portion to be cleaned, but not limited thereto, and the cleaning brush head can also be disposed on the robot arm. The robot arm allows the cleaning brush head to contact the part to be cleaned.
如第二C圖所示，此時，待清潔部分位於反應室210之下部，晶圓承座220可旋轉，使得清潔刷頭相對於待清潔部分運動，藉以清除附著於待清潔部分之一殘留物，本實施例中，待清潔部分包含晶圓承座，但並不以此為限。As shown in FIG. 2C, at this time, the portion to be cleaned is located under the reaction chamber 210, and the wafer holder 220 is rotatable, so that the cleaning brush head moves relative to the portion to be cleaned, thereby removing the residue attached to one of the parts to be cleaned. In this embodiment, the portion to be cleaned includes a wafer holder, but is not limited thereto.
本發明之半導體設備之清潔方法可藉由清潔刷頭清除附著於反應室內部之殘留物，由於本發明之半導體設備不需打開反應室，即可藉由清潔刷頭清除附著於反應室內部之殘留物，因此，可降低半導體設備之維修時間，增進製程良率。The cleaning method of the semiconductor device of the present invention can remove the residue adhering to the inside of the reaction chamber by the cleaning brush head. Since the semiconductor device of the present invention does not need to open the reaction chamber, the cleaning brush head can be removed and adhered to the inside of the reaction chamber. Residues, therefore, can reduce the maintenance time of semiconductor devices and improve process yield.
上述本發明之實施例僅係為說明本發明之技術思想及特點，其目的在使熟悉此技藝之人士能了解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即凡其它未脫離本發明所揭示之精神所完成之等效的各種改變或修飾都涵蓋在本發明所揭露的範圍內，均應包含在下述之申請專利範圍內。The embodiments of the present invention are merely illustrative of the technical spirit and characteristics of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. All other equivalents and modifications of the inventions which are made without departing from the spirit of the invention are intended to be included within the scope of the invention.
200‧‧‧半導體設備200‧‧‧Semiconductor equipment
210‧‧‧反應室210‧‧‧Reaction room
211‧‧‧門閥211‧‧‧Door valve
212‧‧‧第三框架212‧‧‧ Third Framework
213‧‧‧第二框架213‧‧‧ second framework
214‧‧‧第一框架214‧‧‧ first frame
220‧‧‧可動承座220‧‧‧ movable seat
230‧‧‧晶圓承座230‧‧‧ Wafer bearing
231‧‧‧具有清潔刷頭之承座231‧‧‧The seat with a clean brush head
281‧‧‧伸縮導管281‧‧‧ Telescopic catheter
290‧‧‧傳動裝置290‧‧‧Transmission
291‧‧‧直線傳動裝置291‧‧‧Linear transmission
292‧‧‧馬達292‧‧‧Motor
293‧‧‧齒輪組293‧‧‧ Gear Set
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102125788A TWI500103B (en) | 2010-02-01 | 2010-02-01 | Semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102125788A TWI500103B (en) | 2010-02-01 | 2010-02-01 | Semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201347068A TW201347068A (en) | 2013-11-16 |
| TWI500103B true TWI500103B (en) | 2015-09-11 |
Family
ID=49990768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102125788A TWI500103B (en) | 2010-02-01 | 2010-02-01 | Semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI500103B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10294261A (en) * | 1997-04-18 | 1998-11-04 | Sony Corp | Device for applying resist |
| US5966635A (en) * | 1997-01-31 | 1999-10-12 | Motorola, Inc. | Method for reducing particles on a substrate using chuck cleaning |
| JP2005310941A (en) * | 2004-04-20 | 2005-11-04 | Seiko Epson Corp | Spin coater and method of cleaning cup thereof, and brush jig for cleaning cup |
-
2010
- 2010-02-01 TW TW102125788A patent/TWI500103B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966635A (en) * | 1997-01-31 | 1999-10-12 | Motorola, Inc. | Method for reducing particles on a substrate using chuck cleaning |
| JPH10294261A (en) * | 1997-04-18 | 1998-11-04 | Sony Corp | Device for applying resist |
| JP2005310941A (en) * | 2004-04-20 | 2005-11-04 | Seiko Epson Corp | Spin coater and method of cleaning cup thereof, and brush jig for cleaning cup |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201347068A (en) | 2013-11-16 |
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