TWI498989B - Gas port construction and processing device - Google Patents
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本發明係關於一種對半導體晶圓等被處理體施予成膜處理等熱處理之處理裝置及氣體埠構造。The present invention relates to a processing apparatus and a gas crucible structure for applying heat treatment such as a film forming process to a target object such as a semiconductor wafer.
一般來說，為製造半導體積體電路，係對矽基板等所構成的半導體晶圓進行成膜處理、蝕刻處理、氧化處理、擴散處理、改質處理、自然氧化膜的去除處理等各種處理。於專利文獻1~3所揭示之縱型(即所謂的批次(batch)式)處理裝置中進行上述處理時，首先，係在位在處理容器下方之N2 氛圍中的晶圓移載室中，將半導體晶圓從可容納複數片(例如25片左右)半導體晶圓之晶圓匣盒移載至縱型晶舟，並多層地支撐於該縱型晶舟。In general, in order to manufacture a semiconductor integrated circuit, various processes such as a film formation process, an etching process, an oxidation process, a diffusion process, a reforming process, and a natural oxide film removal process are performed on a semiconductor wafer formed of a germanium substrate or the like. When performing the above processing in the vertical type (so-called batch type) processing apparatus disclosed in Patent Documents 1 to 3, first, the wafer transfer chamber in the N 2 atmosphere below the processing container The semiconductor wafer is transferred from a wafer cassette that can accommodate a plurality of semiconductor wafers (for example, about 25 wafers) to a vertical wafer boat, and is supported in multiple layers on the vertical wafer boat.
該晶舟雖依晶圓尺寸而異，但可載置例如30~150片左右的晶圓。該晶舟從處理容器下方的晶圓移載室被搬入(載置)至預先加熱至數百℃溫度之處理容器內後，處理容器內會被維持在氣密狀態。然後，一邊控制處理氣體的流量、製程壓力、製程溫度等各種製程條件，一邊施予特定的熱處理。Although the wafer boat varies depending on the wafer size, for example, about 30 to 150 wafers can be placed. The wafer boat is carried (loaded) from the wafer transfer chamber below the processing container to a processing container heated to a temperature of several hundred ° C., and the inside of the processing container is maintained in an airtight state. Then, a specific heat treatment is applied while controlling various process conditions such as the flow rate of the processing gas, the process pressure, and the process temperature.
此處，將晶圓搬入至處理容器內後立刻針對每個批次處理進行檢查原料氣體等是否洩露至處理容器外之溢漏確認。該溢漏確認係依下述方式進行。亦即，將晶圓搬入至處理容器內並將處理容器內密閉後，在停止供給所有的氣體之狀態下，利用真空幫浦來將處理容器內真空抽氣至基礎壓力。然後，之後，亦完全地關閉真空排氣系統統的開閉閥，而在使處理容器內孤立化之狀態下，監視處理容器內的壓力動向長達數分鐘。又，上述基礎壓力係指能夠利用上述真空幫浦的排氣能力來使該處理容器內達到最高的真空度。Here, immediately after the wafer is carried into the processing container, it is checked for each batch processing whether or not the material gas or the like leaks out of the processing container. This overflow confirmation is performed in the following manner. That is, after the wafer is carried into the processing container and the inside of the processing container is sealed, the vacuum pump is used to evacuate the inside of the processing container to the base pressure while the supply of all the gas is stopped. Then, after that, the opening and closing valve of the vacuum exhaust system is completely closed, and the pressure in the processing container is monitored for several minutes in a state where the inside of the processing container is isolated. Further, the above-mentioned base pressure means that the highest vacuum degree can be achieved in the inside of the processing container by utilizing the exhaust capability of the vacuum pump.
該溢漏確認中，由於附著在處理容器內壁面或內部構造物表面的氣體會一點一點地脫離，故處理容器內的壓力僅會一點一點地上昇，但當該壓力上昇程度為容許值以下時仍是安全的，便移往並進行接下來的成膜處理等實際的熱處理。In the leakage confirmation, since the gas adhering to the inner wall surface of the processing container or the surface of the internal structure is slightly detached, the pressure in the processing container rises only slightly, but when the pressure rises to a certain extent When it is safe below the allowable value, it is moved to the actual heat treatment such as the subsequent film forming treatment.
專利文獻1：日本特開平06-151312號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 06-151312
專利文獻2：日本特開平11-135448號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 11-135448
專利文獻3：日本特開2004-006801號公報Patent Document 3: Japanese Laid-Open Patent Publication No. 2004-006801
然而，連結於上述處理容器之氣體導入系統或氣體排氣系統等之氣體管為了維持處理容器內的氣密性，係透過O型環等密封組件而連接於該處理容器，該密封組件會因經年累月的變化等而使其密封性一點一點地劣化，雖然機率非常地小，但仍無法避免發生溢漏。然後，由於當進行上述溢漏確認時，處理容器內的壓力為最低，因此從外部侵入至處理容器內之少量氣體的溢漏量會有達到最多之傾向。However, in order to maintain the airtightness in the processing container, the gas pipe such as the gas introduction system or the gas exhaust system connected to the processing container is connected to the processing container through a sealing member such as an O-ring, and the sealing member may be caused by The sealing is degraded little by little after years of changes, and although the probability is very small, it is still impossible to avoid leakage. Then, since the pressure in the processing container is the lowest when the above-described overflow is confirmed, the amount of leakage of a small amount of gas which intrudes into the processing container from the outside tends to be the highest.
此情況下，若晶圓的表面狀態對因溢漏而進入之空氣具有耐久性的話則不會產生特別的問題，但若是晶圓的表面狀態是容易與空氣(例如空氣中所含有之氧或水分等)反應之狀態下，則會有該晶圓表面的材質與上述溢漏之氧或水分等反應而使得膜質特性等發生劣化之問題。例如當鎢膜露出於晶圓表面之狀態下，該鎢膜在室溫左右的低溫下即使和空氣接觸也不會產生特別的問題，但若為處理容器的預熱溫度(數百℃左右的溫度)，則會有與溢漏至處理容器內的少量空氣(即氧)產生反應而使得其膜質特性劣化之問題。該膜質特性的劣化亦有即使是在上述溢漏確認中合格的微量空氣溢漏也會發生之問題。In this case, if the surface state of the wafer is durable against the air entering due to the overflow, there is no particular problem, but if the surface state of the wafer is easily with air (for example, oxygen contained in the air or In the state of reaction such as moisture or the like, there is a problem in that the material on the surface of the wafer reacts with the leaked oxygen or moisture to deteriorate the film properties and the like. For example, when the tungsten film is exposed on the surface of the wafer, the tungsten film does not cause any problem even when it is in contact with air at a low temperature of about room temperature, but if it is a preheating temperature of the processing container (about several hundred ° C or so) At the temperature, there is a problem that the film quality characteristics are deteriorated by reacting with a small amount of air (i.e., oxygen) leaking into the processing container. The deterioration of the film quality characteristics also causes a problem that even a small amount of air leakage that is qualified in the above-described overflow detection occurs.
此情況下，雖然亦可考慮將晶圓搬入時的處理容器溫度降至氧與鎢膜不會反應的溫度(接近室溫)，但若是如此則要昇溫至爾後處理溫度之操作會需要很長的時間，而使得產能降低，故實際上不可行。In this case, although it is also conceivable to lower the temperature of the processing container when the wafer is carried in to a temperature at which oxygen and the tungsten film do not react (close to room temperature), if this is the case, the operation of raising the temperature to the post-treatment temperature may take a long time. The time, which makes the production capacity lower, is actually not feasible.
本發明著眼於上述問題點，係為了有效地解決上述問題點所發明者。本發明係提供一種即使是在溢漏確認時將處理容器內的壓力降低至基礎壓力，仍能防止空氣從氣體管的密封部溢漏而侵入至處理容器內之氣體埠構造及處理裝置。The present invention has been made in view of the above problems and has been made in order to effectively solve the above problems. The present invention provides a gas crucible structure and a processing apparatus capable of preventing air from leaking into a processing container from a sealing portion of a gas pipe even when the pressure in the processing container is lowered to a base pressure at the time of overflow detection.
申請專利範圍第1項之發明為一種氣體埠構造，係為了對被處理體進行特定處理而從可真空排氣之處理容器內將氣體排出，其特徵在於具有：氣體排出埠，係設置於該處理容器的端部並具有凸緣部；氣體排氣管，係具有凸緣部且連結於該氣體排出埠；密封組件，係於壓接狀態下而介設於該氣體排出埠之該凸緣部與該氣體排氣管之該凸緣部之間；覆蓋體，係相隔有空間而覆蓋地設置於該密封組件的外周側；及非活性氣體供給機構，係用以在進行將該處理容器內密閉以使該處理容器內為基礎壓力之溢漏確認時，供給非活性氣體至該空間。The invention of claim 1 is a gas crucible structure for discharging a gas from a vacuum evacuation processing container for performing a specific treatment on the object to be processed, and is characterized in that: a gas discharge port is provided Processing the end of the container and having a flange portion; the gas exhaust pipe has a flange portion and is coupled to the gas discharge port; and the seal assembly is attached to the flange of the gas discharge port in a crimped state a portion between the flange portion and the gas exhaust pipe; a cover body disposed on the outer peripheral side of the seal assembly with a space therebetween; and an inert gas supply mechanism for performing the process container When the inner seal is sealed to confirm the overflow of the pressure in the processing container, the inert gas is supplied to the space.
如此地，由於為了對被處理體進行特定處理而從可真空排氣之處理容器內將氣體排出之氣體埠構造中，係於設置於處理容器的端部並具有凸緣部之氣體排出埠與具有凸緣部且連結於氣體排出埠之氣體排氣管之間，於壓接狀態下而在氣體排出埠的凸緣部與氣體排氣管的凸緣部之間介設有密封組件，且於該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。In this way, in the gas crucible structure for discharging the gas from the vacuum evacuated processing container for the specific treatment of the object to be processed, the gas is discharged from the end portion of the processing container and has a flange portion. a gas seal pipe having a flange portion and connected to the gas discharge port, and a seal member is interposed between the flange portion of the gas discharge port and the flange portion of the gas exhaust pipe in a pressure contact state, and A cover body is disposed on the outer peripheral side of the seal assembly so as to be spaced apart from each other so as to be able to supply an inert gas to the space by the inert gas supply mechanism, so that the treatment container is confirmed even when the overflow is confirmed. The internal pressure is reduced to the base pressure, which still prevents air from leaking from the seal of the gas pipe and invading into the processing vessel.
申請專利範圍第7項之發明為一種氣體埠構造，係為了對被處理體進行特定處理而將氣體導入至可真空排氣的處理容器內，其特徵在於具有：氣體導入埠，係形成有設置於該處理容器的端部而用以供氣體導入的氣體噴嘴穿插之噴嘴穿插孔；氣體導入管，係插入有穿插於該噴嘴穿插孔之該氣體噴嘴的端部，即氣體入口側，且連結於該端部；密封組件，係介設於該氣體導入管的端部與該氣體導入埠之間；覆蓋體，係相隔有空間而覆蓋地設置於該密封組件的外周側；壓接組件，係為了將該氣體噴嘴與該氣體導入管之連結部加以密封而將該氣體導入管朝該氣體導入埠側蓄勢彈力來壓接該密封組件；及非活性氣體供給機構，係用以在進行將該處理容器內密閉以使該處理容器內為基礎壓力之溢漏確認時，供給非活性氣體至該空間。The invention of claim 7 is a gas crucible structure for introducing a gas into a vacuum evacuation processing container for specific treatment of the object to be processed, and is characterized in that: a gas introduction crucible is formed a nozzle insertion hole through which a gas nozzle for introducing a gas is inserted at an end of the processing container; and a gas introduction tube inserted into an end of the gas nozzle inserted through the nozzle insertion hole, that is, a gas inlet side, And being connected to the end portion; the sealing assembly is disposed between the end of the gas introduction tube and the gas introduction port; the cover body is disposed on the outer peripheral side of the seal assembly with a space therebetween; crimping The assembly is configured to seal the connection portion between the gas nozzle and the gas introduction pipe, and to pressurize the gas introduction pipe toward the gas-inducing side-loading elastic force to press the sealing assembly; and the inert gas supply mechanism is used for When the inside of the processing container is sealed to confirm the overflow of the pressure in the processing container, an inert gas is supplied to the space.
如此地，由於為了對被處理體進行特定處理而將氣體導入至可真空排氣的處理容器內之氣體埠構造中，係在氣體導入埠穿插有氣體噴嘴，其中該氣體導入埠係形成有設置於處理容器的端部而用以供導入氣體的氣體噴嘴穿插之噴嘴穿插孔，該端部之氣體入口側插入並連結有氣體導入管的端部，並於該氣體導入管之端部與氣體導入埠之間介設有密封組件，該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，且設置有為了將氣體噴嘴與氣體導入管之連結部加以密封而將氣體導入管朝氣體導入埠側蓄勢彈力來壓接密封組件之壓接組件，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。In this way, in the gas crucible structure in which the gas is introduced into the vacuum-decomposable processing container for the specific treatment of the object to be processed, a gas nozzle is inserted through the gas introduction port, and the gas introduction tether is formed with the setting. a nozzle insertion hole through which a gas nozzle for introducing a gas is inserted at an end portion of the processing chamber, and a gas inlet side of the end portion is inserted and coupled to an end portion of the gas introduction tube, and is at an end portion of the gas introduction tube A gas seal is disposed between the gas introduction ports, and a cover body is disposed on the outer peripheral side of the seal assembly so as to be spaced apart from each other, and a gas is introduced to seal the joint between the gas nozzle and the gas introduction pipe. The tube pressurizes the gas to the side of the pressure-bearing elastic force to press the crimping assembly of the sealing assembly so that the inert gas can be supplied to the space by the inert gas supply mechanism, so that even in the case of overflow detection, the processing container is disposed. The pressure is reduced to the base pressure, which still prevents air from leaking from the seal of the gas pipe and invading into the processing vessel.
申請專利範圍第14項之發明為一種處理裝置，係對被處理體施予特定處理，其特徵在於具有：筒體狀處理容器；保持機構，係保持複數片該被處理體並可插脫至該處理容器內；加熱機構，係設置於該處理容器的外側並加熱該被處理體；氣體供給系統，係將所需氣體供給至該處理容器內；真空排氣系統，係將該處理容器內的環境氣體予以排除；及申請專利範圍第1或7項所記載之氣體埠構造。The invention of claim 14 is a processing apparatus for applying a specific treatment to a processed object, characterized in that it has a cylindrical processing container, and a holding mechanism that holds a plurality of the processed objects and can be inserted and detached thereto. In the processing container, a heating mechanism is disposed outside the processing container and heating the object to be processed; a gas supply system supplies the required gas into the processing container; and a vacuum exhaust system is used in the processing container The ambient gas is excluded; and the gas enthalpy structure described in claim 1 or 7 is applied.
依據本發明之氣體埠構造及處理裝置，則可發揮以下的優異作用效果。According to the gas crucible structure and processing apparatus of the present invention, the following excellent effects can be exhibited.
依據申請專利範圍第1項及引用其之申請專利範圍之發明，由於為了對被處理體進行特定處理而從可真空排氣之處理容器內將氣體排出之氣體埠構造中，係在設置於處理容器的端部並具有凸緣部之氣體排出埠與具有凸緣部且連結於氣體排出埠之氣體排氣管之間，於壓接狀態下而在氣體排出埠的凸緣部與氣體排氣管的凸緣部之間介設有密封組件，且於該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。According to the invention of the first application of the patent application and the scope of the patent application cited therein, in the gas 埠 structure for discharging the gas from the vacuum evacuated processing container for the specific treatment of the object to be processed, it is set in the treatment. The end portion of the container has a gas discharge port of the flange portion and a gas exhaust pipe having a flange portion and connected to the gas discharge port, and is in a pressure-contact state at the flange portion of the gas discharge port and the gas exhaust A sealing member is interposed between the flange portions of the tube, and a covering body is disposed on the outer peripheral side of the sealing member so as to be spaced apart so as to be capable of supplying an inert gas to the inert gas supply mechanism. Since the space is lowered, even if the pressure in the processing container is lowered to the base pressure when the overflow is confirmed, the air can be prevented from leaking from the sealing portion of the gas pipe and intruding into the processing container.
依據申請專利範圍第7項及引用其之申請專利範圍之發明，由於為了對被處理體進行特定處理而將氣體導入至可真空排氣的處理容器內之氣體埠構造中，係在氣體導入埠穿插有氣體噴嘴，其中該氣體導入埠係形成有設置於處理容器的端部而用以供導入氣體的氣體噴嘴穿插之噴嘴穿插孔，該端部之氣體入口側插入並連結有氣體導入管的端部，並於該氣體導入管之端部與氣體導入埠之間介設有密封組件，該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，且設置有為了將氣體噴嘴與氣體導入管之連結部加以密封而將氣體導入管朝氣體導入埠側蓄勢彈力來壓接密封組件之壓接組件，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。According to the invention of claim 7 and the scope of the patent application cited therein, the gas is introduced into the gas crucible structure in the vacuum evacuation processing container for specific treatment of the object to be processed, and is introduced into the gas. A gas nozzle is inserted, wherein the gas introduction raft is formed with a nozzle insertion hole provided at an end of the processing container for inserting a gas nozzle for introducing a gas, and a gas introduction tube is inserted and coupled to the gas inlet side of the end portion a sealing member is disposed between the end of the gas introduction tube and the gas introduction port, and the outer peripheral side of the sealing assembly is covered with a covering body in a space-separated manner, and is provided for the gas The connection portion between the nozzle and the gas introduction pipe is sealed, and the gas introduction pipe is pressed toward the gas introduction side elastic force to press the pressure assembly of the seal assembly, so that the inert gas supply mechanism can supply the inert gas to the space. Therefore, even if the pressure in the processing container is lowered to the base pressure when the overflow is confirmed, the air can be prevented from leaking from the sealing portion of the gas pipe and Invade into the processing container.
以下，根據添附圖式來詳述本發明之氣體埠構造及處理裝置的一實施例。圖1為顯示具有本發明氣體埠構造的處理裝置例之結構圖。圖2為顯示氣體排氣側的氣體埠構造之放大剖面圖。圖3為顯示氣體導入側的氣體埠構造之放大剖面圖。圖4為氣體導入側的氣體埠構造之分解圖。Hereinafter, an embodiment of the gas crucible structure and processing apparatus of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a structural view showing an example of a processing apparatus having a gas crucible structure of the present invention. Fig. 2 is an enlarged cross-sectional view showing the gas enthalpy structure on the gas exhaust side. Fig. 3 is an enlarged cross-sectional view showing the gas crucible structure on the gas introduction side. Fig. 4 is an exploded view of the gas crucible structure on the gas introduction side.
如圖所示，該處理裝置2具有容納被處理體(半導體晶圓W)之處理容器4。此處，該處理容器4係由頂部具有排氣口之容器本體6所形成，該容器本體6係藉由耐熱性大的石英而形成為圓筒狀，並構成為豎立在垂直方向之縱型處理容器4。處理容器本體6的直徑當例如所處理之晶圓W的直徑為300mm時，係設定350~450mm左右的範圍。As shown in the figure, the processing apparatus 2 has a processing container 4 that houses a processed object (semiconductor wafer W). Here, the processing container 4 is formed by a container body 6 having a vent opening at the top, and the container body 6 is formed into a cylindrical shape by quartz having high heat resistance, and is configured to be vertically erected in a vertical direction. The container 4 is processed. The diameter of the processing container body 6 is set to a range of about 350 to 450 mm when, for example, the diameter of the processed wafer W is 300 mm.
該石英製容器本體6的下端部呈開口，而如後所述地可將晶圓W搬入、搬出。上述容器本體6下端部的側壁係形成有壁的厚度較厚且僅朝向半徑方向外方稍微延伸之環狀容器凸緣部8。然後，上述容器本體6的端部(容器凸緣部8)係設置有將所需氣體導入至處理容器4內之氣體導入側的氣體埠構造10。然後，該氣體埠構造10係以貫穿石英製氣體噴嘴12之型態而加以設置，以便從外部將氣體導入。The lower end portion of the quartz container body 6 is opened, and the wafer W can be carried in and out as will be described later. The side wall of the lower end portion of the container body 6 is formed with an annular container flange portion 8 having a thick wall and extending slightly outward in the radial direction. Then, the end portion (container flange portion 8) of the container body 6 is provided with a gas crucible structure 10 for introducing a desired gas into the gas introduction side in the processing container 4. Then, the gas crucible structure 10 is provided so as to penetrate the quartz gas nozzle 12 to introduce the gas from the outside.
為了將氣體供給至上述氣體噴嘴12而設置有氣體供給系統14。該氣體供給系統14係具有連通至上述氣體噴嘴12之金屬(例如不鏽鋼製)氣體導入管16，該氣體導入管16的中途依序介設有如質流控制器(mass controler)之流量控制器18及開閉閥20，以便能夠一邊控制處理氣體的流量一邊供給處理氣體。其他所需的處理氣體亦透過相同結構的氣體埠構造10而被供給。該氣體埠構造10在圖示之例中僅記載1個，但實際上可配合所需氣體的種類而設置複數個，例如5~6個左右。針對該氣體埠構造10將敘述於後。A gas supply system 14 is provided to supply gas to the gas nozzle 12 described above. The gas supply system 14 has a metal (for example, stainless steel) gas introduction pipe 16 that communicates with the gas nozzle 12, and a flow controller 18 such as a mass controller is sequentially disposed in the middle of the gas introduction pipe 16. And the valve 20 is opened and closed so that the processing gas can be supplied while controlling the flow rate of the processing gas. Other required process gases are also supplied through the gas crucible structure 10 of the same structure. Although only one of the gas enthalpy structures 10 is described in the illustrated example, a plurality of them may be provided in accordance with the type of the desired gas, for example, about 5 to 6 or so. The gas crucible structure 10 will be described later.
上述容器本體6之容器凸緣部8的周邊部係藉由例如不鏽鋼所形成之底板(base plate)22而被加以支撐，藉由該底板22來支撐容器本體6的重量。該底板22的下方為具有晶圓移載機構(未圖示)之晶圓移載室24，而為接近大氣壓力的氮氣氛圍。又，底板22的上方為一般無塵室的清淨空氣氛圍。上述容器本體6內容納有作為可多層地並以特定間隔保持複數片晶圓W的保持機構之石英製晶舟26。The peripheral portion of the container flange portion 8 of the container body 6 is supported by a base plate 22 formed of, for example, stainless steel, and the weight of the container body 6 is supported by the bottom plate 22. Below the bottom plate 22 is a wafer transfer chamber 24 having a wafer transfer mechanism (not shown), which is a nitrogen atmosphere close to atmospheric pressure. Further, the upper side of the bottom plate 22 is a clean air atmosphere of a general clean room. The container body 6 houses a quartz crystal boat 26 as a holding mechanism capable of holding a plurality of wafers W in a plurality of layers and at specific intervals.
該晶舟26係介隔著石英製保溫筒28而載置於台座30上，該台座30係被支撐於迴轉軸34的上端部，該迴轉軸34係貫穿用以開閉上述容器本體6的下端開口部之蓋部32。然後，該迴轉軸34的貫穿部係介設有例如磁性流體密封件36，以一邊將該迴轉軸34氣密地密封一邊可迴轉地支撐該迴轉軸34。又，蓋部32的周邊部與上述容器本體6的下端部係介設有例如O型環等所構成的密封組件38，以維持處理容器4內的密封性。The wafer boat 26 is placed on the pedestal 30 via a quartz heat insulating tube 28, and the pedestal 30 is supported by the upper end portion of the rotary shaft 34, and the rotary shaft 34 is inserted through the lower end of the container body 6 for opening and closing. The lid portion 32 of the opening. Then, a magnetic fluid seal 36 is interposed in the penetrating portion of the rotary shaft 34 to rotatably support the rotary shaft 34 while hermetically sealing the rotary shaft 34. Further, a sealing member 38 such as an O-ring or the like is interposed between the peripheral portion of the lid portion 32 and the lower end portion of the container body 6 to maintain the sealing property in the processing container 4.
上述迴轉軸34係裝設於被支撐在例如晶舟升降機等的昇降機構40之臂42的前端，以便能夠一體地昇降晶舟26及蓋部32等。又，亦可將上述台座30固定並設置在上述蓋部32側，則不需迴轉晶舟26即可進行晶圓W的處理。The rotary shaft 34 is attached to the front end of the arm 42 supported by the elevating mechanism 40 such as a boat elevator, so that the wafer boat 26, the lid portion 32, and the like can be integrally lifted and lowered. Further, the pedestal 30 may be fixed to the side of the lid portion 32, and the wafer W may be processed without rotating the wafer boat 26.
又，容器本體6的端部(頂部)處係設置有呈開口之排氣口44，且該排氣口44係設置有氣體排出側的氣體埠構造46。針對該氣體埠構造46的結構將敘述於後。然後，該氣體埠構造46係連接有用以將處理容器4內的環境氣體排除之真空排氣系統48。具體來說，上述真空排氣系統48係具有連結於上述氣體埠構造46之例如不鏽鋼所構成的金屬製氣體排氣管50。該氣體排氣管50的內徑為例如110mm左右。然後，該氣體排氣管50的中途依序介設有開閉閥52、如蝶閥之壓力調整閥54及真空幫浦56，以便能夠一邊調整處理容器4內環境氣體的壓力一邊真空抽氣Further, an end portion (top portion) of the container body 6 is provided with an opening venting opening 44, and the venting port 44 is provided with a gas venting structure 46 on the gas discharge side. The structure of the gas crucible structure 46 will be described later. The gas crucible structure 46 is then connected to a vacuum exhaust system 48 that is used to remove ambient gases within the processing vessel 4. Specifically, the vacuum exhaust system 48 has a metal gas exhaust pipe 50 made of, for example, stainless steel connected to the gas crucible structure 46. The inner diameter of the gas exhaust pipe 50 is, for example, about 110 mm. Then, in the middle of the gas exhaust pipe 50, an opening and closing valve 52, a pressure regulating valve 54 such as a butterfly valve, and a vacuum pump 56 are sequentially disposed so as to be able to evacuate while adjusting the pressure of the ambient gas in the processing container 4.
然後，上述處理容器4的側部處設置有將其圍繞之例如日本特開2003-209063號公報所記載之碳鋼絲製加熱器所構成的加熱機構58，以便能夠加熱位於其內側的上述半導體晶圓W。又，該加熱機構58的外周處設置有絕熱材60，以便能夠確保其熱穩定性。A heating mechanism 58 composed of a carbon steel heater described in Japanese Laid-Open Patent Publication No. 2003-209063, for example, is provided at a side portion of the processing container 4 so as to be able to heat the above-mentioned semiconductor crystal located inside thereof. Round W. Further, a heat insulating material 60 is provided at the outer circumference of the heating mechanism 58 so that thermal stability can be ensured.
然後，上述氣體排出側的氣體埠構造46係具有從上述排氣口44延伸且例如直角地往橫向彎曲成L字狀之石英管製氣體排出埠62。該氣體排出埠62的內徑係設定為與上述氣體排氣管50的內徑相同，為例如110mm左右。如圖2中亦有顯示，該氣體排出埠62的前端處係形成有管徑擴大的環狀凸緣部64。然後，上述金屬製氣體排氣管50的端部處係形成有較上述凸緣部64直徑稍大之凸緣部66，該兩凸緣部64、66之間係在壓接狀態下而介設有例如O型環構成的密封組件68，以便將該部分密封。Then, the gas enthalpy structure 46 on the gas discharge side has a quartz control gas discharge port 62 that extends from the exhaust port 44 and is bent in an L-shape, for example, at a right angle. The inner diameter of the gas discharge port 62 is set to be equal to the inner diameter of the gas exhaust pipe 50, and is, for example, about 110 mm. As also shown in Fig. 2, an annular flange portion 64 having an enlarged diameter is formed at the front end of the gas discharge port 62. Then, a flange portion 66 having a diameter slightly larger than that of the flange portion 64 is formed at an end portion of the metal gas exhaust pipe 50, and the flange portions 64 and 66 are connected to each other in a crimped state. A seal assembly 68, such as an O-ring, is provided to seal the portion.
然後，上述密封組件68外周側設置有相隔著空間70而覆蓋之覆蓋體72。該空間70為非常微小的環狀空間。上述覆蓋體72係由抵接於上述氣體排氣埠62側的凸緣部64側面之金屬(例如不鏽鋼)製環狀板塊72A，與介設於該板塊72A與上述氣體排氣管50側的凸緣部66周緣部之間之金屬(例如不鏽鋼)製圓環狀軸環(collar)組件72B所構成，並藉由沿著其圓方向以特定間隔所設置之複數個螺絲74，來將上述凸緣部66、軸環組件72B與板塊72A鎖固。Then, the outer peripheral side of the seal assembly 68 is provided with a cover 72 that is covered by a space 70. This space 70 is a very small annular space. The cover 72 is made of a metal (for example, stainless steel) annular plate 72A that is in contact with the side of the flange portion 64 on the side of the gas exhaust port 62, and is disposed on the side of the plate 72A and the gas exhaust pipe 50. The annular collar assembly 72B of metal (for example, stainless steel) between the peripheral portions of the flange portion 66 is formed by a plurality of screws 74 disposed at specific intervals along the circular direction thereof. The flange portion 66, the collar assembly 72B and the block 72A are locked.
此情況下，上述氣體排氣埠62側的石英製凸緣部64與金屬製覆蓋體72之間係介設有例如Teflon(註冊商標)所構成的緩衝組件76。藉此，上述空間70內則成為和緩密閉狀態。此處，和緩密閉狀態係指下述程度的氣密性：設置有O型環構成的密封組件68之接合部，其密封性很高，但兩凸緣部64、66與板塊72A與軸環組件72B之各接合部的密封性則較上述密封組件68之接合部的密封性要低，而為與外側之間容許具有透氣性的程度。In this case, a buffer unit 76 made of, for example, Teflon (registered trademark) is interposed between the quartz flange portion 64 on the side of the gas exhaust port 62 and the metal cover 72. Thereby, the inside of the space 70 is in a gentle closed state. Here, the gentle sealing state refers to a degree of airtightness in which the joint portion of the seal member 68 formed of an O-ring is provided, and the sealing property is high, but the two flange portions 64, 66 and the plate 72A and the collar The sealing property of each joint portion of the assembly 72B is lower than that of the joint portion of the seal member 68, and is allowed to have a gas permeability to the outside.
然後，為了將非活性氣體供給至上述和緩密閉狀態的微小空間70，而在氣體排出側設置有為本發明特徵之非活性氣體供給機構78。具體來說，上述非活性氣體供給機構78係具有與上述微小空間70相連通之非活性氣體通道80。該非活性氣體通道80係由例如不鏽鋼管所構成，其前端係連接於形成於例如凸緣部66之氣體流通孔82，而與上述空間70相連通。Then, in order to supply the inert gas to the minute space 70 in the above-described closed state, the inert gas supply mechanism 78 which is a feature of the present invention is provided on the gas discharge side. Specifically, the inert gas supply mechanism 78 has an inert gas passage 80 that communicates with the minute space 70. The inert gas passage 80 is made of, for example, a stainless steel pipe, and its front end is connected to a gas flow hole 82 formed in, for example, the flange portion 66, and communicates with the space 70.
上述非活性氣體通道80的中途依序介設有開閉閥84及如質量控制器(mass controler)之流量控制器86，以便能夠進行包含有非活性將氣體之供給停止，來一邊控制流量一邊供給。此處非活性氣體雖使用N2 氣體，但不限於此，亦可使用Ar、He等稀有氣體。然後，該非活性氣體之流量或供給之開始及停止係依據電腦所構成的氣體控制部88(參照圖1)之指示。In the middle of the inert gas passage 80, an opening and closing valve 84 and a flow controller 86 such as a mass controller are sequentially disposed so as to be capable of stopping the supply of the inert gas, and supplying the flow while controlling the flow rate. . Here, although the N 2 gas is used as the inert gas, the present invention is not limited thereto, and a rare gas such as Ar or He may be used. Then, the flow rate or supply start and stop of the inert gas is in accordance with an instruction from the gas control unit 88 (see FIG. 1) constituted by the computer.
又，設置於容器本體6下端部之氣體導入側的氣體埠構造10，如圖3及圖4亦有顯示，係於上述厚壁石英製容器凸緣部8具有氣體導入埠92，該氣體導入埠92係形成有朝向水平方向貫穿之噴嘴穿插孔90。然後，在轉動嵌合狀態下，使彎曲成形為L字狀之石英製氣體噴嘴12的基端部貫穿該噴嘴穿插孔90內，並使氣體入口側之該基端部設置呈僅較噴嘴穿插孔90稍長的長度而較容器凸緣部8要更向外側突出。上述噴嘴穿插孔90的內徑為例如10mm左右。Further, the gas crucible structure 10 provided on the gas introduction side of the lower end portion of the container main body 6 is also shown in FIGS. 3 and 4, and the thick-walled quartz container flange portion 8 has a gas introduction port 92 for introducing the gas. The 埠92 is formed with a nozzle insertion hole 90 penetrating in the horizontal direction. Then, in the rotational fitting state, the base end portion of the quartz gas nozzle 12 which is bent into an L shape is inserted into the nozzle insertion hole 90, and the base end portion on the gas inlet side is provided to be only the nozzle. The length of the insertion hole 90 is slightly longer than the container flange portion 8 to protrude outward. The inner diameter of the nozzle insertion hole 90 is, for example, about 10 mm.
此處用以供給處理氣體之金屬製氣體導入管16的前端部則成為其內徑及外徑皆稍微擴大之擴大承座(socket)部94。該擴大承座部94的內徑H1係設定為僅稍較上述氣體噴嘴12基端部的外徑H2要大(參照圖4)，以便能供氣體噴嘴90的基端部插入並相互連結於該擴大承座部94內。Here, the front end portion of the metal gas introducing pipe 16 for supplying the processing gas is an enlarged socket portion 94 whose inner diameter and outer diameter are slightly enlarged. The inner diameter H1 of the enlarged socket portion 94 is set to be slightly larger than the outer diameter H2 of the base end portion of the gas nozzle 12 (see FIG. 4) so that the base end portion of the gas nozzle 90 can be inserted and connected to each other. The enlarged seat portion 94 is inside.
然後，上述擴大承座部94的前端面係形成為朝向該擴大承座部94的軸心方向而朝內地傾斜之錐面，此處設置有前端壓接面96。對向於該前端壓接面96之容器凸緣部8的氣體導入埠92入口處係形成有環狀密封件接受段部98，該氣體導入埠92的密封件接受段部98與上述擴大承座部94的前端壓接面96之間介設有O型環等之密封組件100。Then, the front end surface of the enlarged socket portion 94 is formed as a tapered surface that is inclined inward toward the axial direction of the enlarged socket portion 94, and a front end pressure contact surface 96 is provided here. An annular seal receiving section 98 is formed at the inlet of the gas introduction port 92 of the container flange portion 8 of the front end crimping surface 96. The seal receiving section 98 of the gas introduction port 92 and the enlarged bearing are formed. A seal assembly 100 such as an O-ring is interposed between the front end crimping faces 96 of the seat portion 94.
然後，上述密封組件100外周側設置有相隔著空間102而覆蓋之覆蓋體104。該覆蓋體104係由沿著容器凸緣部8的圓周方向延伸之圓形環狀上側壓板104A、同樣地形成為圓形環狀之下側壓板104B，以及介設於兩壓板104A、104B間之中央輔助板106所構成，該等係由例如不鏽鋼之金屬所形成。又，上述中央輔助板106係形成有大小為可供上述擴大承座部94貫穿的開口108(參照圖4)，以供擴大承座部94貫穿該開口108。然後，上述上側壓板104A與下側壓板104B之間係在挾置有上述中央輔助板106與容器凸緣部8之狀態下，藉由利用未圖示之螺栓等來將上述上側壓板104A與下側壓板104B鎖固，以固定上述中央輔助板106。Then, the outer peripheral side of the seal assembly 100 is provided with a cover 104 that is covered by the space 102. The cover body 104 is formed by a circular annular upper side pressure plate 104A extending in the circumferential direction of the container flange portion 8, and is also formed into a circular annular lower side pressure plate 104B, and is disposed between the two pressure plates 104A, 104B. The central auxiliary plate 106 is constructed of a metal such as stainless steel. Further, the center auxiliary plate 106 is formed with an opening 108 (see FIG. 4) having a size that allows the enlarged socket portion 94 to pass therethrough, so that the enlarged socket portion 94 penetrates the opening 108. Then, between the upper side pressure plate 104A and the lower side pressure plate 104B, the upper side pressure plate 104A and the lower side are attached by a bolt or the like (not shown) in a state in which the center auxiliary plate 106 and the container flange portion 8 are placed. The side pressure plate 104B is locked to fix the center auxiliary plate 106 described above.
此情況下，石英製容器凸緣部8與金屬製上側壓板104A及下側壓板104B之間係分別介設有例如Teflon(註冊商標)所構成的薄圓環狀緩衝組件110A、110B。然後，此處為了將上述氣體噴嘴12與氣體導入管16之連結部密封，而設置有將上述氣體導入管16朝上述氣體導入埠側蓄勢彈力來壓接上述密封組件100之壓接組件112。具體來說，該壓接組件112係由例如不鏽鋼之金屬所構成，其係由具有大小為可供上述擴大承座部94貫穿的開口114之母螺塊112A，與具有大小為可供上述氣體導入管16貫穿的開口116之公螺塊112B所構成。In this case, thin annular cushioning assemblies 110A and 110B each composed of, for example, Teflon (registered trademark) are interposed between the quartz container flange portion 8 and the metal upper side pressure plate 104A and the lower side pressure plate 104B. Here, in order to seal the connection portion between the gas nozzle 12 and the gas introduction pipe 16, a crimping assembly 112 that presses the gas introduction pipe 16 toward the gas to the side of the gas to pressurize the sealing assembly 100 is provided. . Specifically, the crimping assembly 112 is formed of a metal such as stainless steel, which is formed by a female screw 112A having an opening 114 that is sized to pass through the enlarged retaining portion 94, and has a size sufficient for the gas. The male screw 112B of the opening 116 through which the introduction tube 16 is inserted is formed.
上述母螺塊112A之開口114的內壁處係形成有螺紋118而成為母螺紋，該母螺塊112A係藉由螺栓120等而裝設並固定於上述中央輔助板106。又，上述公螺塊112B前端的半徑經擴大，且本體部分的外周處形成有螺紋122而成為公螺紋，以便能夠螺合於上述母螺塊112A的螺紋118。此情況下，上述擴大承座部94的外徑H3係設定為僅稍較上述公螺塊112B之開口116的內徑H4要大，上述螺合時，上述公螺塊112B的前端係抵接於上述擴大承座部94的段部狀基端部，以便能將其壓接。藉此，密封組件100會被壓接在上述擴大承座部94的前端壓接面96、密封件接受段部98與氣體噴嘴12的外周面之間，以便能該部分氣密地密封。The inner wall of the opening 114 of the female screw 112A is formed with a thread 118 to be a female thread. The female screw 112A is attached to and fixed to the center auxiliary plate 106 by a bolt 120 or the like. Further, the radius of the front end of the male screw 112B is enlarged, and a thread 122 is formed on the outer circumference of the body portion to be a male screw so as to be screwed to the thread 118 of the female screw 112A. In this case, the outer diameter H3 of the enlarged socket portion 94 is set to be slightly larger than the inner diameter H4 of the opening 116 of the male screw 112B, and the front end of the male screw 112B is abutted during the screwing. The segment-shaped base end portion of the socket portion 94 is enlarged as described above so that it can be crimped. Thereby, the seal assembly 100 is crimped between the front end crimping surface 96 of the enlarged socket portion 94, the seal receiving section 98 and the outer peripheral surface of the gas nozzle 12 so that the portion can be hermetically sealed.
其結果為，上述空間102內會成為和緩密閉狀態。此處，和緩密閉狀態係指下述程度的氣密性：設置有O型環構成的密封組件100之接合部，其密封性很高，但兩壓板104A、104B與容器凸緣部8的接合部，或兩壓板104A、104B與中央輔助板106的接合部，或中央輔助板106與擴大承座部94之間的嵌入間隙，或中央輔助板106與壓接組件112之接合部的密封性，則較上述密封組件100之接合部的密封性要低，而為與外側之間容許具有透氣性的程度。As a result, the space 102 is in a gentle closed state. Here, the gentle sealing state refers to a degree of airtightness: a joint portion of the seal assembly 100 provided with an O-ring, which has a high sealing property, but the joint of the two pressure plates 104A, 104B with the container flange portion 8 a portion, or a joint between the two pressure plates 104A, 104B and the center auxiliary plate 106, or an insertion gap between the center auxiliary plate 106 and the enlarged socket portion 94, or a seal between the center auxiliary plate 106 and the crimping member 112. The sealing property of the joint portion of the seal assembly 100 is lower than that of the sealing member 100, and the gas permeability is allowed to be allowed between the outer side and the outer side.
然後，為了將非活性氣體供給至上述和緩密閉狀態的微小空間102，而在氣體導入側而設置有本發明特徵之非活性氣體供給機構124。具體來說，上述非活性氣體供給機構124係具有與上述微小空間102相連通之非活性氣體通道126。該非活性氣體通道126係由例如不鏽鋼管所構成，其前端係連接於形成於例如下側壓板104B之氣體流通孔128，而與上述空間102相連通。又，亦可將該氣體流通孔128設置於上側壓板102A或中央輔助板106。Then, in order to supply the inert gas to the minute space 102 in the above-described closed state, the inert gas supply mechanism 124 of the present invention is provided on the gas introduction side. Specifically, the inert gas supply mechanism 124 has an inert gas passage 126 that communicates with the minute space 102. The inert gas passage 126 is formed of, for example, a stainless steel pipe, and its front end is connected to a gas passage hole 128 formed in, for example, the lower side pressure plate 104B, and communicates with the space 102. Further, the gas circulation hole 128 may be provided in the upper pressure plate 102A or the center auxiliary plate 106.
上述非活性氣體通道126的中途依序介設有開閉閥130及如質量控制器(mass controler)之流量控制器132，以便能夠進行包含有非活性將氣體之供給停止，來一邊控制流量一邊供給。此處非活性氣體雖使用N2 氣體，但不限於此，亦可使用Ar、He等稀有氣體。然後，該非活性氣體之流量或供給之開始及停止係依據電腦所構成的氣體控制部88(參照圖1)之指示。In the middle of the inert gas passage 126, an opening and closing valve 130 and a flow controller 132 such as a mass controller are sequentially disposed so as to be capable of stopping the supply of the inert gas, and supplying the flow while controlling the flow rate. . Here, although the N 2 gas is used as the inert gas, the present invention is not limited thereto, and a rare gas such as Ar or He may be used. Then, the flow rate or supply start and stop of the inert gas is in accordance with an instruction from the gas control unit 88 (see FIG. 1) constituted by the computer.
上述氣體導入側的氣體埠構造10係與針對其他處理氣體系之氣體埠構造為相同結構。又，此處係將上述氣體控制部88共通地使用在氣體排出側的氣體埠構造46與氣體導入側的氣體埠構造10，但不限於此，亦可分別設置氣體控制部88。The gas crucible structure 10 on the gas introduction side has the same structure as the gas crucible structure for other process gas systems. In addition, the gas enthalpy structure 46 on the gas discharge side and the gas enthalpy structure 10 on the gas introduction side are commonly used in the above-described gas control unit 88. However, the present invention is not limited thereto, and the gas control unit 88 may be separately provided.
然後，回到圖1，為了控制該處理裝置的整體作動而設置有例如電腦等所構成的裝置控制部134。該裝置控制部134為了儲存在控制該處理裝置2的作動時所使用之程式而具有儲存媒體136。該儲存媒體136可使用軟碟、CD(Compact Disc)、硬碟、快閃記憶體或DVD等。然後，上述氣體控制部88係在上述裝置控制部134的支配下作動。Then, referring back to FIG. 1, a device control unit 134 including a computer or the like is provided to control the overall operation of the processing device. The device control unit 134 has a storage medium 136 for storing a program used to control the operation of the processing device 2. The storage medium 136 can use a floppy disk, a CD (Compact Disc), a hard disk, a flash memory, a DVD, or the like. Then, the gas control unit 88 is operated under the control of the device control unit 134.
接下來，針對上述結構之處理裝置2的作動加以說明。圖5為顯示使本發明處理裝置作動時，處理容器內的溫度與壓力變化例之圖表，圖6為顯示本發明處理裝置與習知處理裝置之處理容器內的壓力與氧指標變化例之圖表。Next, the operation of the processing apparatus 2 of the above configuration will be described. Fig. 5 is a graph showing an example of changes in temperature and pressure in a processing container when the processing apparatus of the present invention is actuated, and Fig. 6 is a graph showing a variation of pressure and oxygen index in a processing container of the processing apparatus of the present invention and a conventional processing apparatus. .
首先，針對一連串的流程加以說明。於底板22下方成為氮氣氛圍的晶圓移載室24內，利用移載機構(未圖示)來將未處理之多片半導體晶圓W移載至未載置有晶圓並被降下之晶舟26上，而多層地支撐在晶舟26上。該晶圓移載室24內的壓力係設定為大氣壓力程度。此情況下，上述晶圓W表面為露出有在350℃左右以上的溫度下會容易與氧反應而發生膜質劣化的金屬(例如鎢膜)之狀態。First, explain a series of processes. In the wafer transfer chamber 24 which is a nitrogen atmosphere below the bottom plate 22, the unprocessed plurality of semiconductor wafers W are transferred to the unmounted wafer and lowered by a transfer mechanism (not shown). The boat 26 is supported on the boat 26 in multiple layers. The pressure in the wafer transfer chamber 24 is set to the atmospheric pressure level. In this case, the surface of the wafer W is in a state in which a metal (for example, a tungsten film) which easily reacts with oxygen and deteriorates in film quality at a temperature of about 350 ° C or higher.
上述晶圓的移載結束後，上昇支撐有多片晶圓W之上述晶舟26，並將其載置(搬入)於處理容器4內，而藉由蓋部32來將處理容器4的下端開口部加以密閉。此處，為了提高產能，雖依製程溫度而異，但處理容器4係被預熱至較製程溫度要低上某種程度之溫度(例如600℃左右)。又，停止對處理容器4內所有氣體的供給。After the transfer of the wafer is completed, the wafer boat 26 supporting a plurality of wafers W is lifted and loaded (loaded) into the processing container 4, and the lower end of the processing container 4 is placed by the lid portion 32. The opening is sealed. Here, in order to increase the productivity, the processing container 4 is preheated to a temperature lower than the process temperature by a certain degree (for example, about 600 ° C) depending on the process temperature. Further, the supply of all the gases in the processing container 4 is stopped.
將上述處理容器4內密閉後，藉由真空排氣系統48來將處理容器4內的環境氣體真空抽氣，而將處理容器4內的壓力降低至基礎壓力。又，真空幫浦56係經常地迴轉驅動。該基礎壓力為例如0.0004Pa左右。After the inside of the processing container 4 is sealed, the ambient gas in the processing container 4 is evacuated by the vacuum exhaust system 48, and the pressure in the processing container 4 is lowered to the base pressure. Moreover, the vacuum pump 56 is frequently driven to rotate. The base pressure is, for example, about 0.0004 Pa.
如此地，當處理容器4內的壓力到達基礎壓力後，維持氣體供給系統14之開閉閥20的關閉狀態，而在停止對處理容器4內所有氣體的供給之狀態下，使真空排氣系統48的開閉閥52亦為關閉狀態，來使處理容器4內完全地孤立化，以進行調查是否發生大的氣體溢漏之溢漏確認。於該溢漏確認期間，將晶圓W的溫度昇溫，來將該晶圓W加熱至製程溫度(例如630~680℃左右)。然後，在特定的時間進行溢漏確認，溢漏確認結束後，導入所需處理氣體，並維持製程溫度及製程壓力來進行特定處理(例如成膜處理等)。例如成膜處理，當形成矽氮化膜時，係使用二氯矽烷或氨等來作為處理氣體。In this manner, after the pressure in the processing container 4 reaches the base pressure, the closed state of the opening and closing valve 20 of the gas supply system 14 is maintained, and in the state where the supply of all the gases in the processing container 4 is stopped, the vacuum exhaust system 48 is caused. The opening and closing valve 52 is also in a closed state to completely isolate the inside of the processing container 4 to investigate whether or not a large gas leak leak is confirmed. During the overflow confirmation period, the temperature of the wafer W is raised to heat the wafer W to a process temperature (for example, about 630 to 680 ° C). Then, the overflow is confirmed at a specific time, and after the overflow confirmation is completed, the required processing gas is introduced, and the process temperature and the process pressure are maintained to perform a specific process (for example, a film formation process or the like). For example, in the film formation treatment, when a tantalum nitride film is formed, dichlorosilane or ammonia is used as a processing gas.
然後，上述特定處理結束後，將處理容器4的溫度降低至可卸載的預熱溫度，並停止供給處理氣體，而導入吹淨氣體，來使處理容器4內的壓力回復至大氣壓力。又，吹淨氣體一般來說係使用N2 氣體。如此地使處理容器4內的壓力回復至大氣壓力後，下降晶舟26而從處理容器4內將晶圓W卸載，則處理結束。Then, after the above-described specific treatment is completed, the temperature of the processing container 4 is lowered to the preheating temperature at which the unloading is possible, and the supply of the processing gas is stopped, and the purge gas is introduced to return the pressure in the processing container 4 to the atmospheric pressure. Further, the purge gas generally uses N 2 gas. After the pressure in the processing container 4 is returned to the atmospheric pressure in this manner, the wafer boat 26 is lowered and the wafer W is unloaded from the processing container 4, and the process ends.
然而，上述一連串的作動中，由於在溢漏確認時中，係將處理容器4內的環境氣體降低至基礎壓力，故處理容器4內外的壓力差會達到最大。此情況下，當設置於氣體排出側的氣體埠構造46之密封組件68或設置於氣體導入側的氣體埠構造10之密封組件100因經年累月的變化而劣化時，則會有發生該部分的密封性變差，而使得外側的清淨空氣有些許侵入至處理容器4內，導致與露出於晶圓W表面之鎢膜產生反應的情況之虞。However, in the above-described series of operations, since the ambient gas in the processing container 4 is lowered to the base pressure during the confirmation of the overflow, the pressure difference between the inside and the outside of the processing container 4 is maximized. In this case, when the seal assembly 68 of the gas crucible structure 46 provided on the gas discharge side or the seal assembly 100 of the gas crucible structure 10 provided on the gas introduction side is deteriorated over the years, the seal of the portion occurs. The property is deteriorated, and the clean air on the outside is slightly intruded into the processing container 4, resulting in a reaction with the tungsten film exposed on the surface of the wafer W.
然而，本發明之情況係從分別設置於上述各氣體埠構造10、46之非活性氣體供給機構124、78來供給作為非活性氣體之N2 氣體，並使密封組件100、60的外側氛圍為N2 氛圍，故如上所述地，即使密封組件100、60劣化，而亦能夠防止氧侵入至處理容器4內。亦即，氣體排出側的氣體埠構造46中，如圖2所示，經流量控制之N2 氣體係從非活性氣體供給機構78的非活性氣體通道80，而被供給至密封組件68外周側的微小空間70中。因此，由於該微小空間70中主要是N2 氣體氛圍，故即使是在密封組件68已呈劣化之狀態下來進行使處理容器4內為基礎壓力之溢漏確認，仍會只有空間70中的N2 氣體侵入至處理容器4內，故仍可防止大氣中的氧或水分侵入。However, in the case of the present invention, the N 2 gas as the inert gas is supplied from the inert gas supply mechanisms 124 and 78 provided in the respective gas enthalpy structures 10 and 46, and the outer atmosphere of the seal assemblies 100 and 60 is Since the N 2 atmosphere is used, as described above, even if the sealing members 100 and 60 are deteriorated, it is possible to prevent oxygen from entering the processing container 4. That is, in the gas enthalpy structure 46 on the gas discharge side, as shown in FIG. 2, the flow-controlled N 2 gas system is supplied from the inert gas passage 80 of the inert gas supply mechanism 78 to the outer peripheral side of the seal assembly 68. The tiny space is 70. Therefore, since the minute space 70 is mainly a N 2 gas atmosphere, even if the leak correction of the base pressure in the processing container 4 is performed in a state where the sealing member 68 has deteriorated, only the N in the space 70 is still present. Since the gas intrudes into the processing container 4, it is possible to prevent oxygen or moisture from entering the atmosphere.
又，此情況下，由於該微小空間70為和緩密閉狀態，而未積極地設置有不同於專利文獻1之日本特開平6-151312號公報的構造之N2 氣體排出口，故從該空間70向外側漏出的N2 氣體非常地少，其結果便可大幅削減所使用之N2 氣體。In this case, the N 2 gas discharge port having a structure different from that of JP-A-6-151312 of the Japanese Patent Publication No. JP-A-6-151312 is not actively provided in the space 70. The amount of N 2 gas leaking to the outside is extremely small, and as a result, the N 2 gas used can be drastically reduced.
又，氣體導入側的氣體埠構造10中，從圖3所示非活性氣體供給機構124的非活性氣體通道126而經流量控制之N2 氣體會被供給至密封組件100的外周側的微小空間102中。因此，由該微小空間102中主要是N2 氣體氛圍，故即使是在密封組件100已呈劣化之狀態下來進行使處理容器4內成為基礎壓力之溢漏確認，仍會只有空間102中的N2 氣體侵入至處理容器4內，故仍可防止大氣中的氧或水分侵入。Further, in the gas crucible structure 10 on the gas introduction side, the N 2 gas whose flow rate is controlled from the inert gas passage 126 of the inert gas supply mechanism 124 shown in FIG. 3 is supplied to the minute space on the outer peripheral side of the seal assembly 100. 102. Therefore, since the minute space 102 is mainly a N 2 gas atmosphere, even if the leak correction of the base pressure in the processing container 4 is performed in a state where the sealing assembly 100 has deteriorated, only the N in the space 102 will be present. Since the gas intrudes into the processing container 4, it is possible to prevent oxygen or moisture from entering the atmosphere.
又，此情況下，與先前氣體排出側的氣體埠構造46同樣地，由於該微小空間102為和緩密閉狀態，而未設置有不同於專利文獻1之日本特開平6-151312號公報的構造之N2 氣體排出口，故從該空間70向外側漏出的N2 氣體非常地少，其結果便可大幅削減所使用之N2 氣體。In this case, in the same manner as the gas enthalpy structure 46 on the gas discharge side of the prior art, the micro space 102 is in a gentle closed state, and is not provided with a configuration different from that of JP-A-6-151312. Since the N 2 gas is discharged, the amount of N 2 gas leaking from the space 70 to the outside is extremely small, and as a result, the N 2 gas used can be drastically reduced.
上述情況下，雖亦可經常地將N2 氣體供給至各空間70、102，但至少為了進行溢漏確認，較佳為從處理容器4內減壓開始時便供給N2 氣體，亦或開始進行成膜處理時便停止供給N2 氣體。如此地，只要限制N2 氣體的供給時間，便能減少N2 氣體的使用量。又，只要預先供給N2 氣體來使上述各空間70、102中的氧濃度為1%以下，則即使是萬一該空間70、102中的氛圍溢漏並侵入至處理容器4內，仍不會對鎢膜造成不好的影響。又，更佳為供給N2 氣體來使氧濃度為0.2%以下。In the above case, the N 2 gas may be supplied to the spaces 70 and 102 frequently. However, at least for the purpose of detecting the overflow, it is preferable to supply the N 2 gas from the start of the pressure reduction in the processing container 4, or to start. When the film formation process is performed, the supply of N 2 gas is stopped. In this way, as long as the limit of the N 2 gas supply time, it can reduce the amount of N 2 gas. In addition, if the N 2 gas is supplied in advance so that the oxygen concentration in each of the spaces 70 and 102 is 1% or less, even if the atmosphere in the spaces 70 and 102 overflows and intrudes into the processing container 4, Will have a bad effect on the tungsten film. Further, it is more preferable to supply N 2 gas so that the oxygen concentration is 0.2% or less.
又，為了如上所述地將空間70、102中的氧濃度設定為1%以下，關於氣體導入側的氣體埠構造10，可針對1個氣體埠構造來導入3slm以上的N2 氣體，抑或針對氣體排出側的氣體埠構造46來導入3.0slm以上的N2 氣體。In addition, in order to set the oxygen concentration in the spaces 70 and 102 to 1% or less as described above, the gas enthalpy structure 10 on the gas introduction side can introduce N 2 gas of 3 slm or more for one gas enthalpy structure, or The gas enthalpy structure 46 on the gas discharge side introduces N 2 gas of 3.0 slm or more.
如此地，依據本發明，由於為了對被處理體進行特定處理而將氣體導入至可真空排氣的處理容器內之氣體埠構造中，係在氣體導入埠穿插有氣體噴嘴，其中該氣體噴嘴係形成有設置於處理容器的端部而用以供氣體導入的氣體噴嘴穿插之噴嘴穿插孔，該端部之氣體入口側插入並連結有氣體導入管的端部，且該氣體導入管的端部與氣體導入埠之間介設有密封組件，並於該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，且設置有為了將氣體噴嘴與氣體導入管之連結部加以密封而將氣體導入管朝氣體導入埠側蓄勢彈力來壓接密封組件之壓接組件，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。As described above, according to the present invention, in order to introduce a gas into a gas enthalpy structure in a vacuum evacuated processing container for specific treatment of the object to be processed, a gas nozzle is inserted through the gas introduction port, wherein the gas nozzle system a nozzle insertion hole through which a gas nozzle for gas introduction is provided at an end of the processing container, and a gas inlet side of the end portion is inserted and coupled to an end of the gas introduction tube, and the end of the gas introduction tube a sealing member is interposed between the portion and the gas introduction port, and a covering body is disposed on the outer peripheral side of the sealing member so as to be spaced apart from each other, and a joint portion for sealing the gas nozzle and the gas introduction pipe is provided. And the gas introduction tube presses the gas into the side of the gas, and presses the crimping assembly of the sealing assembly so that the inert gas can be supplied to the space by the inert gas supply mechanism, so even when the leak is confirmed Reducing the pressure in the processing vessel to the base pressure still prevents air from leaking from the seal portion of the gas pipe and invading into the processing vessel.
又，由於為了對被處理體進行特定處理而從可真空排氣之處理容器內將氣體排出之氣體埠構造中，係於設置於處理容器的端部並具有凸緣部之氣體排出埠與具有凸緣部且連結於氣體排出埠之氣體排氣管之間，於壓接狀態下而在氣體排出埠的凸緣部與氣體排氣管的凸緣部之間介設有密封組件，且於該密封組件的外周側以相隔有空間之方式覆蓋地設置有覆蓋體，以便能夠藉由非活性氣體供給機構來供給非活性氣體至該空間，故即使是在溢漏確認時會使處理容器內的壓力降低至基礎壓力，仍可防止空氣從氣體管的密封部溢漏並侵入到處理容器內。Moreover, in the gas crucible structure for discharging the gas from the vacuum evacuation processing container in order to perform specific treatment on the object to be processed, the gas is disposed at the end portion of the processing container and has a flange portion. a flange portion is connected between the gas exhaust pipes of the gas discharge port, and a seal assembly is interposed between the flange portion of the gas discharge port and the flange portion of the gas exhaust pipe in a pressure contact state, and The outer peripheral side of the seal assembly is provided with a covering body so as to cover the space so as to be capable of supplying an inert gas to the space by the inert gas supply mechanism, so that the inside of the processing container is confirmed even when the overflow is confirmed. The pressure is reduced to the base pressure, which still prevents air from leaking from the seal of the gas pipe and invading into the processing vessel.
[本發明之評估實驗][Evaluation experiment of the present invention]
接下來，針對本發明之處理裝置進行了評估實驗，以下就該評估結果加以說明。圖6係顯示進行處理裝置的評估實驗時，處理容器內的壓力與氧指標之圖表。圖6(A)為顯示習知處理裝置的情況，圖6(B)為顯示本發明處理裝置的情況。兩處理裝置皆使用溢漏確認時不會劣化到導致NG(Not Good)的程度但有溢漏之O型環。Next, an evaluation experiment was conducted on the processing apparatus of the present invention, and the evaluation results will be described below. Fig. 6 is a graph showing the pressure and oxygen index in the processing container when the evaluation experiment of the processing apparatus is performed. Fig. 6(A) shows the case of a conventional processing device, and Fig. 6(B) shows the case of the processing device of the present invention. Both treatment devices use an O-ring that does not deteriorate to the extent of NG (Not Good) but overflows when it is confirmed by overflow.
此處右側縱軸的氧指標與氧濃度為相同意思。處理容器內的壓力會因真空抽氣而從大氣壓力(760Torr)變化至基礎壓力。又，本發明之處理裝置中，係針對1個氣體埠構造供給2slm的N2 氣體。又，氧指標在初期時的大振幅係測定機器的作動不穩定時的值。Here, the oxygen index on the right vertical axis has the same meaning as the oxygen concentration. The pressure in the processing vessel changes from atmospheric pressure (760 Torr) to base pressure due to vacuum pumping. Further, in the processing apparatus of the present invention, 2 slm of N 2 gas is supplied to one gas crucible structure. Further, the large amplitude of the oxygen index at the initial stage is a value when the operation of the machine is unstable.
如圖6(A)所示，習知處理裝置的情況下，發現當使處理容器內為基礎壓力時，氧指標會達到1200~1400左右，而有相當量的O2 因溢漏而侵入。相對於此，在圖6(B)所示之本發明裝置的情況下，發現即使是使處理容器內為基礎壓力，氧指標仍為500以下，且即使發生溢漏，O2 幾乎不會侵入至處理容器內，而可獲得良好的結果。As shown in Fig. 6(A), in the case of the conventional processing apparatus, it was found that when the pressure inside the processing container is used, the oxygen index will reach about 1200 to 1400, and a considerable amount of O 2 will invade due to overflow. On the other hand, in the case of the apparatus of the present invention shown in Fig. 6(B), it was found that even if the pressure in the processing container is the base pressure, the oxygen index is 500 or less, and even if a leak occurs, O 2 hardly intrudes. Good results are obtained by processing into the container.
又，於其他評估實驗之習知處理裝置中，使用無劣化的新O型環來使密封部不會發生溢漏，而在溢漏確認時故意地將2sccm的大氣導入至處理容器內而產生與溢漏相同現象，結果發現雖溢漏確認的結果不會成為NG，但晶圓表面上的鎢膜會氧化，而使得膜特性劣化。Further, in the conventional processing apparatus for other evaluation experiments, a new O-ring without deterioration was used to prevent leakage of the sealing portion, and a 2 sccm atmosphere was intentionally introduced into the processing container at the time of overflow detection. As with the overflow phenomenon, it was found that although the result of the overflow confirmation does not become NG, the tungsten film on the surface of the wafer is oxidized, and the film characteristics are deteriorated.
相對於此，如先前利用圖6(B)所說明地，於使用密封性劣化至某種程度的O型環之本發明處理裝置中，在溢漏確認時針對1個氣體埠構造以2slm的流量來導入N2 氣體後，發現晶圓表面上的鎢膜不會被氧化，而可確認本發明之有效性。On the other hand, as described above with reference to FIG. 6(B), in the processing apparatus of the present invention using an O-ring in which the sealing property is deteriorated to some extent, 2 slm is constructed for one gas enthalpy at the time of overflow detection. After the introduction of the N 2 gas by the flow rate, it was found that the tungsten film on the surface of the wafer was not oxidized, and the effectiveness of the present invention was confirmed.
又，上述實施例中，係以利用石英製容器本體6來形成處理容器4整體的情況為例來加以說明，但不限於此，當然無需贅言本發明可適用於在容器本體6的下端部設置有氣體噴嘴安裝用的金屬(例如不鏽鋼等)製分歧管(manifold)之處理容器4。又，此處係以將處理容器4設置為垂直豎立之縱型處理裝置為例來加以說明，但不限於此，本發明亦可適用於將處理容器設置為水平方向之橫型處理裝置。Further, in the above-described embodiment, the case where the entire processing container 4 is formed by the quartz container body 6 is taken as an example, but the present invention is not limited thereto, and it is needless to say that the present invention is not applicable to the lower end portion of the container body 6. There is a processing container 4 for a manifold made of a metal nozzle (for example, stainless steel or the like) for gas nozzle mounting. Here, the vertical processing apparatus in which the processing container 4 is vertically erected is described as an example. However, the present invention is not limited thereto, and the present invention is also applicable to a horizontal processing apparatus in which a processing container is disposed in a horizontal direction.
再者，此處係以形成鎢膜的情況為例來加以說明，但不限於此，本發明亦可適用於形成其他種類的膜之情況，再者，不限於成膜處理，本發明亦可適用於進行其他處理的情況(例如退火處理、氧化擴散處理、改質處理等)。Here, the case where the tungsten film is formed will be described as an example, but the present invention is not limited thereto, and the present invention is also applicable to the case of forming another type of film. Further, the present invention is not limited to the film forming process, and the present invention may also be used. It is suitable for cases where other treatments are performed (for example, annealing treatment, oxidative diffusion treatment, upgrading treatment, etc.).
又，此處係以半導體晶圓作為被處理體為例來加以說明，但該半導體晶圓亦包含矽基板或GaAs、SiC、GaN等之化合物半導體基板，再者，不限於該等基板，本發明亦可適用於液晶顯示裝置所使用之玻璃基板或陶瓷基板等。Here, the semiconductor wafer is described as an example of the object to be processed, but the semiconductor wafer also includes a germanium substrate or a compound semiconductor substrate such as GaAs, SiC, or GaN, and is not limited to the substrate. The invention can also be applied to a glass substrate or a ceramic substrate used in a liquid crystal display device.
H1、H4．．．內徑H1, H4. . . the inside diameter of
H2、H3．．．外徑H2, H3. . . Outer diameter
W．．．晶圓W. . . Wafer
2．．．處理裝置2. . . Processing device
4．．．處理容器4. . . Processing container
6．．．容器本體6. . . Container body
8．．．凸緣部8. . . Flange
10．．．氣體埠構造10. . . Gas raft structure
12．．．氣體噴嘴12. . . Gas nozzle
14．．．氣體供給系統14. . . Gas supply system
16．．．氣體導入管16. . . Gas introduction tube
18．．．流量控制器18. . . Flow controller
20．．．開閉閥20. . . Open and close valve
22．．．底板twenty two. . . Bottom plate
24．．．晶圓移載室twenty four. . . Wafer transfer chamber
26．．．晶舟26. . . Crystal boat
28．．．保溫筒28. . . Insulation cylinder
30．．．台座30. . . Pedestal
32．．．蓋部32. . . Cover
34．．．迴轉軸34. . . Rotary axis
36．．．磁性流體密封件36. . . Magnetic fluid seal
38．．．密封組件38. . . Sealing assembly
40．．．昇降機構4040. . . Lifting mechanism 40
42．．．臂42. . . arm
44．．．排氣口44. . . exhaust vent
46．．．氣體埠構造46. . . Gas raft structure
48．．．真空排氣系統48. . . Vacuum exhaust system
50．．．氣體排氣管50. . . Gas exhaust pipe
52．．．開閉閥52. . . Open and close valve
54．．．壓力調整閥54. . . Pressure regulating valve
56．．．真空幫浦56. . . Vacuum pump
58．．．加熱機構58. . . Heating mechanism
60．．．絕熱材60. . . Insulation
62．．．氣體排出埠62. . . Gas discharge
64、66．．．凸緣部64, 66. . . Flange
68．．．密封組件68. . . Sealing assembly
70．．．空間70. . . space
72．．．覆蓋體72. . . Cover
72A．．．板塊72A. . . Plate
72B．．．軸環組件72B. . . Collar assembly
74．．．螺絲74. . . Screw
76．．．緩衝組件76. . . Buffer component
78．．．非活性氣體供給機構78. . . Inactive gas supply mechanism
80．．．非活性氣體通道80. . . Inactive gas channel
84．．．開閉閥84. . . Open and close valve
86．．．流量控制器86. . . Flow controller
88．．．氣體控制部88. . . Gas control department
90．．．噴嘴穿插孔90. . . Nozzle through jack
92．．．氣體導入埠92. . . Gas introduction
94．．．擴大承座部94. . . Expand the seat
96．．．前端壓接面96. . . Front end crimping surface
98．．．密封件接受段部98. . . Seal accepting section
100．．．密封組件100. . . Sealing assembly
102．．．空間102. . . space
104．．．覆蓋體104. . . Cover
104A．．．上側壓板104A. . . Upper side plate
104B．．．下側壓板104B. . . Lower side pressure plate
106．．．中央輔助板106. . . Central auxiliary board
108．．．開口108. . . Opening
110A、110B．．．緩衝組件110A, 110B. . . Buffer component
112．．．壓接組件112. . . Crimp assembly
112A．．．母螺塊112A. . . Female screw block
112B．．．公螺塊112B. . . Male screw
114、116．．．開口114, 116. . . Opening
118．．．螺紋118. . . Thread
120．．．螺栓120. . . bolt
122．．．螺紋122. . . Thread
124．．．非活性氣體供給機構124. . . Inactive gas supply mechanism
126．．．非活性氣體通道126. . . Inactive gas channel
128．．．氣體流通孔128. . . Gas circulation hole
130．．．開閉閥130. . . Open and close valve
132．．．流量控制器132. . . Flow controller
134．．．裝置控制部134. . . Device control unit
136．．．儲存媒體136. . . Storage medium
圖1為顯示具有本發明氣體埠構造的處理裝置例之結構圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a structural view showing an example of a processing apparatus having a gas crucible structure of the present invention.
圖2為顯示氣體排氣側的氣體埠構造之放大剖面圖。Fig. 2 is an enlarged cross-sectional view showing the gas enthalpy structure on the gas exhaust side.
圖3為顯示氣體導入側的氣體埠構造之放大剖面圖。Fig. 3 is an enlarged cross-sectional view showing the gas crucible structure on the gas introduction side.
圖4為氣體導入側的氣體埠構造之分解圖。Fig. 4 is an exploded view of the gas crucible structure on the gas introduction side.
圖5為顯示使本發明處理裝置作動時，處理容器內的溫度與壓力變化例之圖表。Figure 5 is a graph showing an example of changes in temperature and pressure in a processing vessel when the processing apparatus of the present invention is actuated.
圖6A、圖6B為顯示本發明處理裝置與習知處理裝置之處理容器內的壓力與氧指標變化例之圖表。6A and 6B are graphs showing changes in pressure and oxygen indexes in a processing container of the processing apparatus of the present invention and a conventional processing apparatus.
W．．．晶圓W. . . Wafer
2．．．處理裝置2. . . Processing device
4．．．處理容器4. . . Processing container
6．．．容器本體6. . . Container body
8．．．凸緣部8. . . Flange
10．．．氣體埠構造10. . . Gas raft structure
12．．．氣體噴嘴12. . . Gas nozzle
14．．．氣體供給系統14. . . Gas supply system
16．．．氣體導入管16. . . Gas introduction tube
18．．．流量控制器18. . . Flow controller
20．．．開閉閥20. . . Open and close valve
22．．．底板twenty two. . . Bottom plate
24．．．晶圓移載室twenty four. . . Wafer transfer chamber
26．．．晶舟26. . . Crystal boat
28．．．保溫筒28. . . Insulation cylinder
30．．．台座30. . . Pedestal
32．．．蓋部32. . . Cover
34．．．迴轉軸34. . . Rotary axis
36．．．磁性流體密封件36. . . Magnetic fluid seal
38．．．密封組件38. . . Sealing assembly
40．．．昇降機構40. . . Lifting mechanism
42．．．臂42. . . arm
44．．．排氣口44. . . exhaust vent
46．．．氣體埠構造46. . . Gas raft structure
48．．．真空排氣系統48. . . Vacuum exhaust system
50．．．氣體排氣管50. . . Gas exhaust pipe
52．．．開閉閥52. . . Open and close valve
54．．．壓力調整閥54. . . Pressure regulating valve
56．．．真空幫浦56. . . Vacuum pump
58．．．加熱機構58. . . Heating mechanism
60．．．絕熱材60. . . Insulation
62．．．氣體排出埠62. . . Gas discharge
68．．．密封組件68. . . Sealing assembly
70．．．空間70. . . space
72．．．覆蓋體72. . . Cover
78．．．非活性氣體供給機構78. . . Inactive gas supply mechanism
80．．．非活性氣體通道80. . . Inactive gas channel
84．．．開閉閥84. . . Open and close valve
86．．．流量控制器86. . . Flow controller
88．．．氣體控制部88. . . Gas control department
102．．．空間102. . . space
104．．．覆蓋體104. . . Cover
124．．．非活性氣體供給機構124. . . Inactive gas supply mechanism
126．．．非活性氣體通道126. . . Inactive gas channel
130．．．開閉閥130. . . Open and close valve
132．．．流量控制器132. . . Flow controller
134．．．裝置控制部134. . . Device control unit
136．．．儲存媒體136. . . Storage medium
Claims (14)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009187843A JP4924676B2 (en) | 2009-08-13 | 2009-08-13 | Gas port structure and processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201120981A TW201120981A (en) | 2011-06-16 |
| TWI498989B true TWI498989B (en) | 2015-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099126826A TWI498989B (en) | 2009-08-13 | 2010-08-12 | Gas port construction and processing device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4924676B2 (en) |
| TW (1) | TWI498989B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI805287B (en) * | 2021-04-14 | 2023-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor heat treatment device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013229494A (en) * | 2012-04-26 | 2013-11-07 | Sharp Corp | Semiconductor growth apparatus |
| JP6145279B2 (en) * | 2013-02-06 | 2017-06-07 | 東京エレクトロン株式会社 | Gas introduction pipe connection structure and heat treatment apparatus using the same |
| KR101471004B1 (en) * | 2013-05-07 | 2014-12-09 | (주)티티에스 | injector and substrate processing apparatus having the same |
| JP2016176584A (en) * | 2015-03-23 | 2016-10-06 | 東京エレクトロン株式会社 | Gas introduction pipe connection structure and substrate treating device using the same |
| JP6820766B2 (en) * | 2017-03-02 | 2021-01-27 | 東京エレクトロン株式会社 | Gas introduction mechanism and heat treatment equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162780A1 (en) * | 2003-07-03 | 2006-07-27 | Hiroyuki Matsuura | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635626A (en) * | 1986-06-25 | 1988-01-11 | Matsushita Electric Works Ltd | Radio communication equipment |
| JP2584643B2 (en) * | 1987-12-19 | 1997-02-26 | 富士通株式会社 | Heat treatment equipment |
| JP3153945B2 (en) * | 1992-10-30 | 2001-04-09 | ソニー株式会社 | Low pressure CVD equipment |
| JP3406104B2 (en) * | 1994-12-28 | 2003-05-12 | 東京エレクトロン株式会社 | Heat treatment equipment |
| JP3005566B1 (en) * | 1998-12-14 | 2000-01-31 | 山口日本電気株式会社 | Vacuum equipment |
| JP4282912B2 (en) * | 2001-03-29 | 2009-06-24 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162780A1 (en) * | 2003-07-03 | 2006-07-27 | Hiroyuki Matsuura | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI805287B (en) * | 2021-04-14 | 2023-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor heat treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4924676B2 (en) | 2012-04-25 |
| TW201120981A (en) | 2011-06-16 |
| JP2011040636A (en) | 2011-02-24 |
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