TWI498939B - Thermal treatment device and liquefied gas supply device using the thermal treatment device - Google Patents

Thermal treatment device and liquefied gas supply device using the thermal treatment device Download PDF

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TWI498939B
TWI498939B TW097130637A TW97130637A TWI498939B TW I498939 B TWI498939 B TW I498939B TW 097130637 A TW097130637 A TW 097130637A TW 97130637 A TW97130637 A TW 97130637A TW I498939 B TWI498939 B TW I498939B
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cooling medium
heat treatment
liquefied gas
temperature
cooling
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TW200926258A (en
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Kazuo Yokogi
Terumasa Koura
Masahiro Kimoto
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Air Liquide
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熱處理裝置及使用該熱處理裝置之液化氣體供應裝置Heat treatment device and liquefied gas supply device using the same

本發明係關於一種熱處理裝置及使用該熱處理裝置之液化氣體供應裝置,且尤其係關於一種用於由諸如HF、ClF3 、BCl3 、SiH2 Cl2 及WF6 之氣體代表的供半導體製造用之特殊材料氣體及各種其他處理氣體之液化製程及汽化製程的熱處理裝置,且係關於一種供應由此熱處理裝置處理之液化氣體之液化氣體供應裝置。The present invention relates to a heat treatment apparatus and a liquefied gas supply apparatus using the same, and more particularly to a semiconductor manufacturing apparatus for gas represented by gases such as HF, ClF 3 , BCl 3 , SiH 2 Cl 2 and WF 6 The liquefaction process of the special material gas and various other process gases and the heat treatment device of the vaporization process, and relates to a liquefied gas supply device for supplying the liquefied gas processed by the heat treatment device.

技術背景technical background

由諸如HF、ClF3 、BCl3 、SiH2 Cl2 及WF6 之氣體代表之低蒸氣壓液化氣體常在半導體製造製程及各種其他製程中用作特殊材料氣體及各種處理氣體。該等低蒸氣壓液化氣體通常以液態填充於高壓氣體容器(下文稱為“容器”)中,且被傳遞至諸如半導體製造工廠及消耗該等液化氣體之各種其他處理設施之設施。在該等情況下,半導體製造工廠及作為液化氣體消耗設施之其他各種處理裝置(下文稱為“處理裝置”)並非以液態而是以氣態接收此等液化氣體且以氣態使用。此時,將填充有液化氣體之容器安裝於稱為氣缸櫃之氣體供應設施中且氣體在容器中汽化為氣態且經由連接至處理裝置之管道供應。Low vapor pressure liquefied gases represented by gases such as HF, ClF 3 , BCl 3 , SiH 2 Cl 2 and WF 6 are often used as special material gases and various process gases in semiconductor manufacturing processes and various other processes. The low vapor pressure liquefied gases are typically filled in a high pressure gas container (hereinafter referred to as "container") in a liquid state and delivered to facilities such as semiconductor manufacturing plants and various other processing facilities that consume such liquefied gases. In such cases, the semiconductor manufacturing plant and other various processing devices (hereinafter referred to as "processing devices") that are liquefied gas consuming facilities do not receive the liquefied gases in a gaseous state but in a gaseous state and are used in a gaseous state. At this time, the vessel filled with the liquefied gas is installed in a gas supply facility called a cylinder cabinet and the gas is vaporized into a gaseous state in the vessel and supplied via a pipe connected to the treatment device.

在該等製造製程中,當經由供應流徑將液化氣體自氣體供應設施供應至處理裝置時,考慮到供應氣體過程中的 可控制性及安全性,存在需要施加諸如冷卻或冷卻與加熱之組合的熱處理之情況。照慣例,對於該等熱處理裝置,冷卻構件及加熱構件通常已製備且分離及獨立使用。In such manufacturing processes, when the liquefied gas is supplied from the gas supply facility to the processing device via the supply flow path, taking into account the process of supplying the gas Controllability and safety, there are cases where it is necessary to apply a heat treatment such as cooling or a combination of cooling and heating. Conventionally, for such heat treatment devices, the cooling member and the heating member have generally been prepared and separated and used independently.

更特定言之,可引述例如圖12中所示之液化氣體供應系統中所用之加熱裝置。此處,使用加熱構件來防止材料氣體於液化氣體供應管道系統中之再液化,且藉由將管道流徑加熱至饋入液化材料氣體供應管道205中之液化材料氣體的汽化點以上來防止其再液化。此處,201為質流控制器,202為溫度感測器,203為溫度控制電路,204為加熱材料氣體供應系統管道之加熱器且205為液化材料氣體供應管道。206為製程腔室且207為液化材料氣體儲存缸(例如參見專利文件1)。More specifically, a heating device used in, for example, the liquefied gas supply system shown in Fig. 12 can be cited. Here, a heating member is used to prevent reliquefaction of the material gas in the liquefied gas supply piping system, and is prevented by heating the pipe flow path above the vaporization point of the liquefied material gas fed into the liquefied material gas supply pipe 205. Reliquefaction. Here, 201 is a mass flow controller, 202 is a temperature sensor, 203 is a temperature control circuit, 204 is a heater for a heating material gas supply system pipe, and 205 is a liquefied material gas supply pipe. 206 is a process chamber and 207 is a liquefied material gas storage cylinder (see, for example, Patent Document 1).

關於冷卻構件,可引述例如圖13中所示之使用冷凍機產生冷能之熱處理裝置(低溫液化氣體冷卻裝置)。亦即,其為包含儲存低溫液化氣體之儲存容器102、儲存容器102上方之冷凝槽104、連接冷凝槽104與儲存容器102之輸送管道122及124,及用於冷凝冷凝槽104中之氣體的冷凍機106之冷卻裝置。冷凍機106之再冷凝裝置138係安裝於冷凝槽104中,儲存容器102中之氣化氣體經由輸送管道122流入冷凝槽104中,且在冷凝槽104中冷凝之液化氣體經由輸送管道124溢出且流入儲存容器102中(例如參見專利文件2)。圖13中,108為容器本體,110為液相部件,112為氣相部件,114為感測器,116為冷凝槽本體,118為液相部件,120為氣相部件,126為遮蔽箱,140為冷凍 機本體,144為輸送管道及146為壓縮機。Regarding the cooling member, for example, a heat treatment device (low temperature liquefied gas cooling device) which generates cold energy using a refrigerator as shown in Fig. 13 can be cited. That is, it is a storage container 102 containing a cryogenic liquefied gas, a condensing tank 104 above the storage container 102, conveying pipes 122 and 124 connecting the condensing tank 104 and the storage container 102, and a gas for condensing the gas in the condensing tank 104. The cooling device of the refrigerator 106. The recondensing device 138 of the refrigerator 106 is installed in the condensing tank 104, and the vaporized gas in the storage container 102 flows into the condensing tank 104 via the conveying pipe 122, and the liquefied gas condensed in the condensing tank 104 overflows through the conveying pipe 124 and It flows into the storage container 102 (see, for example, Patent Document 2). In Fig. 13, 108 is a container body, 110 is a liquid phase component, 112 is a gas phase component, 114 is a sensor, 116 is a condensation tank body, 118 is a liquid phase component, 120 is a gas phase component, and 126 is a shielding box. 140 for freezing The machine body, 144 is a conveying pipe and 146 is a compressor.

專利文件1:日本公開未審查申請案1998-12556專利文件2:日本公開未審查申請案1999-193979Patent Document 1: Japanese Open Unexamined Application 1998-12556 Patent Document 2: Japanese Open Unexamined Application 1999-193979

本發明之揭示Disclosure of the present invention

然而,已檢測到在如上所述之熱處理裝置或使用此等熱處理裝置之液化氣體供應裝置中可能存在以下問題。However, it has been detected that the following problems may occur in the heat treatment apparatus as described above or the liquefied gas supply apparatus using the heat treatment apparatuses.

(1)在安裝有使用低蒸氣壓液化氣體之處理裝置的半導體工廠及製造製程設施中,存在許多種使用多個冷卻處理構件及加熱處理構件之情況,且為了確保安裝多個熱處理裝置所佔之面積傾向於較大。此成為在需要特殊設施如清潔室之如上述工廠之該設施中安裝及引入其他設備的主要障礙。就成本而言其亦增加負擔。(1) In a semiconductor factory and a manufacturing process facility in which a processing apparatus using a low vapor pressure liquefied gas is installed, there are many cases in which a plurality of cooling processing members and heat treatment members are used, and in order to secure installation of a plurality of heat treatment devices The area tends to be larger. This becomes a major obstacle to the installation and introduction of other equipment in such facilities as the above-mentioned plants that require special facilities such as clean rooms. It also adds to the burden in terms of cost.

(2)當使用多個冷卻處理構件時,必需製備多個單獨的冷卻介質槽且因冷卻源能量洩漏而導致能量自冷卻介質槽大量損失。(2) When a plurality of cooling treatment members are used, it is necessary to prepare a plurality of separate cooling medium tanks and cause a large loss of energy from the cooling medium tanks due to leakage of cooling source energy.

(3)由於存在較多可靠性低的部件及待維護部件增多,因此導致維護項目及修理工作增多。(3) Due to the increase in the number of components with low reliability and the number of components to be maintained, maintenance projects and repair work are increased.

本發明之目標係使用單一能源產生多個冷卻源及加熱源,且提供一種緊密但功能優良之熱處理裝置及一種使用此熱處理裝置之液化氣體供應裝置。詳言之,本發明之目標係提供一種使用供半導體製造用之特殊材料氣體或各種 其他處理氣體的使用單一裝置進行多個液化製程及汽化製程之熱處理裝置,及一種供應由此熱處理裝置處理之液化氣體之液化氣體供應裝置。The object of the present invention is to produce a plurality of cooling sources and heating sources using a single energy source, and to provide a compact but functionally excellent heat treatment apparatus and a liquefied gas supply apparatus using the same. In particular, the object of the present invention is to provide a special material gas or various materials for use in semiconductor manufacturing. The other processing gas is a heat treatment device for performing a plurality of liquefaction processes and a vaporization process using a single device, and a liquefied gas supply device for supplying the liquefied gas processed by the heat treatment device.

本發明之發明者在積累專門研究後得以完成本發明而藉由如下所述之熱處理裝置及使用此熱處理裝置之液化氣體供應裝置實現上述目標。The inventors of the present invention have completed the present invention by accumulating specialized research and achieved the above object by a heat treatment apparatus as described below and a liquefied gas supply apparatus using the same.

本發明為一種特徵在於使用單一冷凍機系統產生具有不同溫度之多種冷卻介質,使用該等冷卻介質在多個熱處理區段進行冷卻處理或加熱處理,且同時控制用作上述熱處理區段熱處理之參考冷卻源之上述冷卻介質中至少一者之溫度的熱處理裝置。The present invention is characterized in that a single chiller system is used to generate a plurality of cooling media having different temperatures, and the cooling media is used for cooling treatment or heat treatment in a plurality of heat treatment sections, and at the same time controlling the heat treatment used as the heat treatment section. A heat treatment device that cools at least one of the above-described cooling media of the source.

如上所述,由於熱處理裝置在具有諸如液化氣體供應裝置或液化氣體消耗設施之設施的製造製程中起重要作用,因此需要高能量效率及多個穩定的冷卻源供應及緊密且功能優良之熱處理裝置。根據此等需要,本發明使提供一種緊密且功能優良之熱處理裝置成為可能,該熱處理裝置藉由使用單一冷凍機系統產生具有不同溫度之多種冷卻介質,且使用該等冷卻介質在多個熱處理區段進行冷卻處理或加熱處理使得能夠對由產生冷卻介質至最終熱處理之熱處理製程進行系統控制及管理。詳言之,藉由對冷卻介質中之至少一者實施高度精確溫度控制且使其成為參考冷卻源,將受相同精確度控制之冷卻介質供應至各熱處理區段,且同時向其中供應所需溫度之冷卻介質之多個熱處理 區段彼此相互關聯的溫度控制成為可能,並且對應於諸如樣品條件及環境條件之條件的控制成為可能。此外,亦可回收對應於循環使用之各冷卻介質之能量。此處,“冷卻介質”不僅指可用作冷卻源而且亦指可用作加熱源之熱介質,且其細節將隨後陳述。As described above, since the heat treatment apparatus plays an important role in the manufacturing process of a facility having a facility such as a liquefied gas supply or a liquefied gas consumption facility, high energy efficiency and a plurality of stable cooling source supply and a compact and functional heat treatment apparatus are required. . In accordance with such needs, the present invention makes it possible to provide a compact and functional heat treatment apparatus that produces a plurality of cooling media having different temperatures by using a single freezer system, and uses the cooling media in a plurality of heat treatment zones. The cooling treatment or heat treatment of the segments enables system control and management of the heat treatment process from the generation of the cooling medium to the final heat treatment. In detail, by performing highly precise temperature control on at least one of the cooling mediums and making it a reference cooling source, the cooling medium controlled by the same accuracy is supplied to each heat treatment section while supplying the required heat therein Multiple heat treatment of temperature cooling medium Temperature control in which sections are associated with each other is possible, and control corresponding to conditions such as sample conditions and environmental conditions becomes possible. In addition, the energy corresponding to each cooling medium used for recycling can also be recovered. Here, the "cooling medium" means not only a cooling medium but also a heat medium which can be used as a heating source, and the details thereof will be described later.

本發明為上述熱處理裝置,其特徵在於由多個多結構冷卻介質桶組成之儲存上述所產生之冷卻介質之冷卻介質槽,其在最內的第一冷卻介質桶中儲存最低溫度第一冷卻介質,在其周圍以使得第二低溫第二冷卻介質儲存於第二冷卻介質桶中第三低溫冷卻介質儲存於第三冷卻介質桶中、且第n低溫冷卻介質儲存於第n個冷卻介質桶中之方式而以自低溫至高溫之順序儲存冷卻介質,且同時自上述冷卻介質桶向上述熱處理區段供應冷卻介質。The present invention is a heat treatment apparatus according to the present invention, characterized by a cooling medium tank comprising a plurality of multi-structured cooling medium tanks for storing the generated cooling medium, wherein the lowest temperature first cooling medium is stored in the innermost first cooling medium tank Having a second low temperature second cooling medium stored in the second cooling medium tank, the third low temperature cooling medium is stored in the third cooling medium tank, and the nth low temperature cooling medium is stored in the nth cooling medium tank The cooling medium is stored in the order from low temperature to high temperature, and at the same time, the cooling medium is supplied from the above-mentioned cooling medium tank to the heat treatment section.

如上所述,在用於諸如液化氣體供應裝置及液化氣體消耗設施之設施中的熱處理裝置中,需要供應具有不同溫度之多種冷卻介質,且根據該等裝置安裝空間之侷限,需要緊密結構。本發明遵照此需求且同時使組成具有多個多結構冷卻介質桶之冷卻介質槽,且在桶中以使得以自最內桶至最外桶之順序儲存最低溫度冷卻介質至最高溫度冷卻介質之方式儲存待供應之多種冷卻介質以藉由此緊密性提高獲得之能量效率成為可能。不同於需要在各桶周圍安置保溫層及個別控制溫度之習知方法,此組成允許各桶之間的簡單保溫以減少能量損失,且由於對冷卻介質桶中至少一者之溫度控制使得能夠在所需精確範圍內對相鄰冷卻介 質桶進行溫度控制而使熱處理裝置甚至更緊密成為可能。此處,“多結構”不僅限於以同心方式排列多個冷卻介質桶,而且包括任何兩個冷卻介質桶以平面或空間方式彼此部分相鄰之任何多層排列。As described above, in the heat treatment apparatus used in facilities such as the liquefied gas supply apparatus and the liquefied gas consumption facility, it is necessary to supply a plurality of types of cooling medium having different temperatures, and depending on the limitations of the installation space of the apparatuses, a compact structure is required. The present invention complies with this need and at the same time constitutes a cooling medium tank having a plurality of multi-structured cooling medium tanks, and is stored in the barrel such that the lowest temperature cooling medium is stored in the order from the innermost barrel to the outermost barrel to the highest temperature cooling medium. It is possible to store a plurality of cooling media to be supplied in order to increase the energy efficiency obtained by the tightness. Unlike conventional methods that require the placement of insulation around each barrel and individual temperature control, this composition allows for simple insulation between the barrels to reduce energy loss, and because of the temperature control of at least one of the cooling medium barrels enables Adjacent cooling to the required precise range Temperature control of the barrel allows the heat treatment unit to be even closer. Here, "multiple structure" is not limited to arranging a plurality of cooling medium barrels in a concentric manner, and includes any multilayer arrangement in which any two cooling medium barrels are partially adjacent to each other in a planar or spatial manner.

本發明為上述熱處理裝置,其特徵在於具有至少兩個充當液化構件、儲存構件及汽化構件之熱處理區段,及允許在此等構件之間獨立地及交替地轉換之功能,使用上述第一冷卻介質作為用於液化構件之熱處理區段之冷卻源,使用上述第二冷卻介質作為用於儲存構件之熱處理區段之冷卻源,且同時使用上述第三冷卻介質作為用於汽化構件之熱處理區段之加熱源。The present invention is the above heat treatment apparatus characterized by having at least two heat treatment sections serving as a liquefaction member, a storage member, and a vaporization member, and a function of allowing independent and alternate conversion between the members, using the first cooling described above The medium serves as a cooling source for the heat treatment section of the liquefaction member, and the second cooling medium is used as a cooling source for the heat treatment section of the storage member, and at the same time, the third cooling medium is used as the heat treatment section for the vaporization member The heating source.

在半導體製造製程及其他各種製程中,使用多種類型的液化氣體且需要具有不同溫度之多種冷卻介質用於液相及氣相之冷卻處理及加熱處理,液態至氣態之相轉化處理,氣態至液態之相轉化處理,及此外儲存液相及氣相氣體之溫度維持處理。本發明使提供藉由相繼對應於處理條件之如上所述使用具有不同溫度之多種冷卻介質作為液化構件之熱處理區段之冷卻源,作為儲存構件之熱處理區段之冷卻源,及作為汽化構件之熱處理區段之加熱源,使用單一裝置進行多種液化處理及汽化處理之熱處理裝置成為可能。In the semiconductor manufacturing process and various other processes, various types of liquefied gases are used and various cooling media having different temperatures are required for liquid phase and gas phase cooling treatment and heat treatment, liquid to gas phase transformation treatment, gaseous to liquid state. The phase conversion treatment, and further the temperature maintenance process of storing the liquid phase and the gas phase gas. The present invention provides a cooling source for a heat treatment section using a plurality of cooling media having different temperatures as a liquefaction member as described above correspondingly to processing conditions, as a cooling source of the heat treatment section of the storage member, and as a vaporization member The heat source of the heat treatment section is made possible by a plurality of liquefaction treatments and vaporization treatments using a single apparatus.

本發明為上述熱處理裝置,其特徵在於當自其作為上述液化構件或儲存構件之功能轉換至其作為汽化構件之功能時,預先轉換上述第一至第三冷卻介質之供應路徑,或 預先轉換至當其處於轉換後可確保該等功能中任一者之狀態時各功能之控制溫度。The present invention is the above heat treatment apparatus characterized by pre-converting the supply paths of the first to third cooling mediums described above, or from the function of the liquefaction member or the storage member to the function of the vaporization member, or Pre-converted to the control temperature of each function when it is in the state of ensuring any of these functions after conversion.

如上所述,在熱處理裝置中,作為液化構件及儲存構件之功能及作為副汽化構件之功能為獨立處理液化氣體之功能且同時如上所述其受控溫度扮演重要角色。然而,當交替地轉換此等功能時,儘管迅速轉換液化氣體之處理功能相對容易,但難以確保氣相與液相共存之各構件的迅速溫度轉換。本發明藉由將各構件之實際操作溫度預先轉換至在其可確保包含熱處理區段之任何構件之任何功能時各功能之受控溫度來迅速確保各功能以允許穩定供應液化氣體。As described above, in the heat treatment apparatus, the functions as the liquefaction member and the storage member and the function as the sub-vaporization member are functions of independently processing the liquefied gas and at the same time their controlled temperature plays an important role as described above. However, when these functions are alternately switched, although the processing function of rapidly switching the liquefied gas is relatively easy, it is difficult to ensure rapid temperature conversion of the members in which the gas phase and the liquid phase coexist. The present invention rapidly ensures functions to allow stable supply of liquefied gas by pre-converting the actual operating temperature of each component to a controlled temperature of each function as it ensures any function of any of the components comprising the heat treatment section.

本發明為上述熱處理裝置,其特徵在於使用來自上述冷凍機之熱輻射區段之熱量作為對上述溫度受控冷卻介質之溫度控制的加熱源。The present invention is the above heat treatment apparatus characterized by using heat from a heat radiation section of the refrigerator as a heating source for temperature control of the temperature controlled cooling medium.

用於產生冷卻介質之冷凍機配備重複壓縮及膨脹冷凍機之熱介質的壓縮區段及熱輻射區段。同時,為產生多種冷卻介質,對冷卻介質進行溫度控制的熱源成為必需的。不同於自該熱輻射區段自然輻射熱量之習知概念,本發明使用此熱量作為溫度受控冷卻介質之熱源,且藉由此有效使用包括冷凍機之整個熱處理裝置之能量,可提供在不增添特殊功能之情況下具有高能量效率及高度精確溫度控制的緊密但功能優良之熱處理裝置。The freezer for generating a cooling medium is provided with a compression section and a heat radiation section for reheating and expanding the heat medium of the refrigerator. At the same time, in order to generate a plurality of cooling media, a heat source for temperature control of the cooling medium becomes necessary. Unlike the conventional concept of naturally radiating heat from the heat radiating section, the present invention uses this heat as a heat source for a temperature controlled cooling medium, and by utilizing the energy of the entire heat treatment apparatus including the refrigerator, it is possible to provide A compact but functional heat treatment unit with high energy efficiency and highly precise temperature control with special features added.

本發明為上述熱處理裝置,其特徵在於上述汽化構件具有上述第三冷卻介質可以接觸儲存待氣化目標氣體之容 器外圓周及底部之方式流過的空間,且同時具有在上述空間之底面將上述第三冷卻介質垂直噴射至該容器底部之噴嘴。The present invention is the above heat treatment apparatus, characterized in that the vaporization member has a capacity that the third cooling medium can contact the gas to be gasified. The space through which the outer circumference and the bottom of the apparatus flow, and at the same time has a nozzle for vertically spraying the third cooling medium to the bottom of the container on the bottom surface of the space.

為使用汽化構件穩定供應諸如液化氣體之材料,在已開始供應後,使用汽化熱維持液相溫度以及供應開始時之溫度條件變得重要。此時,由於使用習知夾套型加熱方法難以補充伴隨特別填充於壓力容器或其他等效容器中的液相液化氣體自容器中心區段液相表面蒸發之溫度損失,所以難以穩定供應液相氣體。本發明之特徵在於藉由具有上述第三冷卻介質可以接觸容器外圓周及底部之方式流過之空間以確保自容器周邊供應加熱源且使用噴嘴將第三冷卻介質垂直噴射至容器底部以在液相中心產生向上流動且在液相內形成對流來確保均一的液相溫度。使用此組成,可均一地將在容器中之液化氣體自液相氣化且穩定地供應液化氣體。In order to stably supply a material such as a liquefied gas using a vaporization member, it is important to use a heat of vaporization to maintain the liquidus temperature and a temperature condition at the start of supply after the supply has started. At this time, it is difficult to supplement the temperature loss of the liquid phase liquefied gas which is particularly filled in the pressure vessel or other equivalent container from the liquid phase surface of the central portion of the container by using the conventional jacket type heating method, so that it is difficult to stably supply the liquid phase. gas. The invention is characterized in that the space through which the third cooling medium can contact the outer circumference and the bottom of the container is ensured to ensure that the heating source is supplied from the periphery of the container and the third cooling medium is sprayed vertically to the bottom of the container using the nozzle to be in the liquid. The phase center produces an upward flow and convection in the liquid phase to ensure a uniform liquidus temperature. With this composition, the liquefied gas in the vessel can be uniformly vaporized from the liquid phase and the liquefied gas can be stably supplied.

本發明為一種液化氣體供應裝置,其將液化氣體自填充有液化氣體之容器經由管道系統以氣態供應至單獨的氣體消耗設施,其特徵在於在上述熱處理裝置中之任一者處對經由上述管道供應之氣態液化氣體執行液化處理及汽化處理,或液化處理、儲存處理及汽化處理。The present invention is a liquefied gas supply device that supplies a liquefied gas from a container filled with a liquefied gas to a separate gas consuming facility in a gaseous state via a piping system, characterized in that at any one of the above-described heat treatment devices is passed through the above-mentioned pipe The gaseous liquefied gas supplied is subjected to liquefaction treatment and vaporization treatment, or liquefaction treatment, storage treatment and vaporization treatment.

液化氣體供應裝置在諸如半導體製程之設施中扮演重要角色,且同時甚至當填充於容器(下文稱為“填充容器”)中之液化氣體係以氣態供應至相隔一段距離分開安置之氣體消耗設施時,必須要穩定供應液化氣體。尤其在 使用低蒸氣壓液化氣體時,在習知液化氣體供應裝置中諸如由再液化及氣態供應流徑中之壓力損失所引起的供應體積降低之問題尚未充分解決。鑒於此等問題,本發明之特徵在於使用上述熱處理裝置執行液化處理及汽化處理,或液化處理、儲存處理及汽化處理,以使提供使得能夠穩定供應所需流率同時防止氣態供應管道(主及副管道)中之再液化且確保自填充容器至處理裝置之氣態供應壓力的液化氣體供應裝置成為可能。亦即,藉由在處理裝置附近或內部強制使所供應之氣化液化氣體液化後,使其再氣化,且接著將其以氣態饋送至處理裝置中而非直接將其供應至作為氣體消耗設施之處理裝置中可防止氣態供應管道中之再液化及確保氣態供應壓力。The liquefied gas supply device plays an important role in a facility such as a semiconductor process, and at the same time, even when a liquefied gas system filled in a container (hereinafter referred to as a "filled container") is supplied in a gaseous state to a gas consuming facility that is separately disposed at a distance It is necessary to supply liquefied gas stably. especially in When a low vapor pressure liquefied gas is used, the problem of a reduction in the supply volume caused by pressure loss in the reliquefaction and gas supply flow paths in the conventional liquefied gas supply device has not been sufficiently solved. In view of such problems, the present invention is characterized in that the above-described heat treatment apparatus is used to perform a liquefaction treatment and a vaporization treatment, or a liquefaction treatment, a storage treatment, and a vaporization treatment, so as to provide a flow rate required to stably supply a supply while preventing a gaseous supply pipe (main and It is possible to reliquefy in the secondary pipe and to ensure a liquefied gas supply from the filling vessel to the gaseous supply pressure of the treatment unit. That is, by forcibly liquefying the supplied gasified liquefied gas in the vicinity of or inside the processing apparatus, it is regasified, and then it is fed to the processing apparatus in a gaseous state instead of directly supplying it as gas consumption. The reprocessing of the gas supply line and the supply of gaseous pressure can be prevented in the treatment unit of the facility.

本發明為上述液化氣體供應裝置,其特徵在於具有上述熱處理裝置中之至少兩者,使用在該等熱處理裝置處產生之不同溫度之多種冷卻介質, 在第一熱處理裝置處使用最低溫度冷卻介質對上述氣態液化氣體實施液化處理,或進一步使用第二低溫冷卻介質對液態液化氣體實施儲存處理, 在另一熱處理裝置處使用溫度比前兩種冷卻介質高之冷卻介質對上述經儲存處理之液化氣體實施汽化處理, 使得能夠在上述液化及儲存處理與汽化處理之間轉換,且在該轉換的同時,具有自動在供應至上述第一熱處理裝置之冷卻介質與供應至上述另一熱處理裝置之冷卻介質之間轉換的冷卻介質流徑轉換系統。The present invention is the above liquefied gas supply device characterized by having at least two of the above heat treatment devices, using a plurality of cooling media at different temperatures generated at the heat treatment devices, Performing liquefaction treatment on the gaseous liquefied gas at a first heat treatment device using a minimum temperature cooling medium, or further performing a storage treatment on the liquid liquefied gas using a second low temperature cooling medium, Performing vaporization treatment on the stored liquefied gas at a further heat treatment device using a cooling medium having a higher temperature than the first two types of cooling medium, Enabling switching between the liquefaction and storage treatment and the vaporization treatment, and at the same time as the conversion, having automatic conversion between the cooling medium supplied to the first heat treatment apparatus and the cooling medium supplied to the other heat treatment apparatus Cooling medium flow path conversion system.

如上所述,在用於各種製造製程中之液化氣體供應裝置中,必需多種溫度條件下之熱處理,且需要在緊密但功能優良之熱處理裝置中具有高能量效率的多種冷卻源之穩定供應。亦存在必需在液相及氣相之冷卻處理模式及加熱處理模式,執行自液態至氣態之相處理及自氣態至液態之相處理,及另外儲存液相及氣相之溫度維持處理,且需要此等熱處理模式之間的轉換,及冷卻處理溫度與加熱處理溫度之間的轉換之情況。本發明藉由使用單一裝置產生不同溫度之多種冷卻介質,任意將冷卻介質供應流徑轉換至多個熱處理區段,且轉換熱處理模式,或在冷卻處理溫度與加熱處理溫度之間轉換而使提供使得能夠穩定供應液化氣體之液化氣體供應裝置成為可能。As described above, in the liquefied gas supply apparatus used in various manufacturing processes, heat treatment under various temperature conditions is required, and stable supply of various cooling sources having high energy efficiency in a compact but functionally excellent heat treatment apparatus is required. There are also cooling treatment modes and heat treatment modes in the liquid phase and the gas phase, performing phase treatment from liquid to gas phase and phase treatment from gas to liquid, and additionally maintaining temperature maintenance in the liquid phase and the gas phase, and The transition between these heat treatment modes and the transition between the cooling process temperature and the heat treatment temperature. The present invention converts a cooling medium supply flow path to a plurality of heat treatment sections by using a single device to generate a plurality of cooling media of different temperatures, and converts the heat treatment mode, or converts between the cooling process temperature and the heat treatment temperature to provide It is possible to stably supply a liquefied gas supply device for liquefied gas.

如上所述,本發明之熱處理裝置或使用此熱處理裝置之液化氣體供應裝置藉由使用單一裝置執行多種液化處理及汽化處理而使提供液化氣體的穩定供應成為可能,該裝置係用於供半導體製造用之低蒸氣壓材料氣體及諸如各種處理氣體之其他液化氣體。As described above, the heat treatment apparatus of the present invention or the liquefied gas supply apparatus using the same is capable of providing stable supply of liquefied gas by performing a plurality of liquefaction treatments and vaporization treatments using a single apparatus for semiconductor manufacturing. Low vapor pressure material gases and other liquefied gases such as various process gases.

實施本發明之最佳配置Best configuration for implementing the present invention

下文使用圖示描述實施本發明之配置。此處,基本配置為一種熱處理裝置,其使用單一冷凍機系統產生不同溫度之多種冷卻介質,使用該等冷卻介質在多個熱處理區段 執行冷卻處理或加熱處理,控制上述冷卻介質中至少一者之溫度,及使用該溫度受控冷卻介質作為上述熱處理區段熱處理之參考冷卻源。The configuration in which the present invention is implemented will be described below using the drawings. Here, the basic configuration is a heat treatment device that uses a single chiller system to produce a plurality of cooling media at different temperatures, using the cooling media in a plurality of heat treatment zones Performing a cooling treatment or a heat treatment, controlling a temperature of at least one of the cooling mediums, and using the temperature-controlled cooling medium as a reference cooling source for heat treatment of the heat treatment section.

<本發明之熱處理裝置之基本組成之實施例><Embodiment of Basic Composition of Heat Treatment Apparatus of the Present Invention>

圖1為展示本發明之熱處理裝置(下文稱為“此裝置”)之基本組成的實施例之概括圖。此處,說明如表1中所示使用三種不同溫度之三種冷卻介質執行三種類型熱處理-液化、儲存及汽化-之情況。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an embodiment of a basic constitution of a heat treatment apparatus (hereinafter referred to as "this apparatus") of the present invention. Here, the case where three types of heat treatments - liquefaction, storage, and vaporization - are performed using three kinds of cooling media of three different temperatures as shown in Table 1.

此裝置3由以下構件組成:“冷卻介質產生單元7”,其包含一產生作為冷卻源之冷卻能的冷凍機71,輸送冷凍機之熱介質之流徑72及具有3個冷卻桶(第一冷卻介質桶7a、第二冷卻介質桶7b及第三冷卻介質桶7c)之冷卻介質槽73;及“熱處理單元(液化氣體供應設施)3u”,其包含液化部分待經熱處理之物質(諸如液化氣體)的液化構件3a、儲存此液化物質之儲存構件3b及使其氣化之汽化構件3c。The device 3 is composed of the following components: a "cooling medium generating unit 7" comprising a refrigerator 71 that generates cooling energy as a cooling source, a flow path 72 for transporting the heat medium of the refrigerator, and having three cooling buckets (first a cooling medium tank 7a, a second cooling medium tank 7b, and a cooling medium tank 73 of the third cooling medium tank 7c); and a "heat treatment unit (liquefied gas supply facility) 3u" containing a substance to be heat-treated (such as liquefaction) The gas liquefaction member 3a, the storage member 3b storing the liquefied material, and the vaporization member 3c for vaporizing the gas.

在冷卻介質產生單元7處,由冷凍機71產生之冷卻源(冷凍機之熱介質)經由流徑72供應至冷卻介質槽73之第一冷卻介質桶7a。第一冷卻介質桶7a中之冷卻介質經冷卻,伴隨此冷卻,第二冷卻介質桶7b中之冷卻介質經由隔牆Wa被冷卻,此外第三冷卻介質桶7c中之冷卻介質經由隔牆Wb被冷卻,且因此在指定時間內在各冷卻介質桶中儲存指定溫度之冷卻介質。第一、第二及第三循環泵Pa、Pb及Pc將各冷卻介質桶中之所儲存冷卻介質供應至熱處理單元3,形成自液化構件熱處理區段3a、儲存構件熱處理區段3b及汽化構件熱處理區段3c之各者再次返回各冷卻介質桶之循環系統以執行各熱處理區段之冷卻處理及加熱處理。下文分別詳細描述冷卻介質產生單元7及熱處理單元3u。At the cooling medium generating unit 7, a cooling source (heat medium of the refrigerator) generated by the refrigerator 71 is supplied to the first cooling medium tank 7a of the cooling medium tank 73 via the flow path 72. The cooling medium in the first cooling medium tank 7a is cooled, and with this cooling, the cooling medium in the second cooling medium tank 7b is cooled via the partition wall Wa, and further the cooling medium in the third cooling medium tank 7c is blocked via the partition wall Wb. Cooling, and thus storing a cooling medium of a specified temperature in each of the cooling medium tanks within a specified time. The first, second, and third circulation pumps Pa, Pb, and Pc supply the stored cooling medium in each of the cooling medium tanks to the heat treatment unit 3, forming a self-liquefaction member heat treatment section 3a, a storage member heat treatment section 3b, and a vaporization member. Each of the heat treatment sections 3c is returned to the circulation system of each of the cooling medium tanks to perform cooling treatment and heat treatment of each heat treatment section. The cooling medium generating unit 7 and the heat treatment unit 3u are separately described in detail below.

[關於冷卻介質產生單元7][Regarding Cooling Medium Generation Unit 7]

合意的是,用於此裝置之冷卻介質產生單元7係由具有3個產生冷卻介質之冷卻介質桶之三層結構之整合單元組成,如圖2所示。亦合意的是,控制至少一個冷卻介質桶之溫度且使用其作為此裝置熱處理之參考冷卻源。其闡明使用單一冷卻源系統之整個裝置之熱處理的控制標準,且同時對於各熱處理區段而言,其使藉由調整各冷卻介質桶之結構及冷卻介質供應速率來任意控制所要求冷卻介質之供應成為可能。此處,當第二冷卻介質桶7b中之第二冷卻介質與第三冷卻介質桶7c中之第三冷卻介質之間的溫差較大時,需要將第二冷卻介質桶7b與第三冷卻介質桶7c之間的隔牆Wb製成雙層結構且在其內部產生空氣層。藉 此,可降低冷卻能損失且減輕溫度控制之負擔。冷卻介質產生單元7具有以下特徵。Desirably, the cooling medium generating unit 7 for the apparatus is composed of an integrated unit having three layers of a cooling medium tank for generating a cooling medium, as shown in FIG. It is also desirable to control the temperature of at least one of the cooling medium drums and use it as a reference cooling source for heat treatment of the apparatus. It clarifies the control criteria for the heat treatment of the entire apparatus using a single cooling source system, and at the same time, for each heat treatment section, it arbitrarily controls the required cooling medium by adjusting the structure of each cooling medium tank and the supply rate of the cooling medium. Supply is possible. Here, when the temperature difference between the second cooling medium in the second cooling medium tank 7b and the third cooling medium in the third cooling medium tank 7c is large, the second cooling medium tank 7b and the third cooling medium are required. The partition wall Wb between the tubs 7c is formed in a two-layer structure and generates an air layer inside thereof. borrow This reduces the cooling energy loss and reduces the burden of temperature control. The cooling medium generating unit 7 has the following features.

(i)其特徵在於具有冷凍機71作為產生多種冷卻介質之單一系統。亦即,不同於習知方法中需要三個系統以產生三種冷卻介質。更特定言之,其特徵在於由冷凍機71產生之冷卻源(冷凍機之熱介質)係經由流徑72以浸入第一冷卻介質中之方式分布以專門冷卻第一冷卻介質桶7a中之第一冷卻介質,且使用自冷卻介質槽1傳輸之此冷卻能經由隔牆Wa及Wb冷卻第二冷卻介質桶7b及第三冷卻介質桶7c。此處,冷凍機71不限於任何特定類型,且可使用如圖2中所示之該蒸氣壓縮冷凍機。其為高度通用之冷凍機,由壓縮機71a、冷凝器71b、接收器71c、膨脹閥71d及蒸發器71e組成,且可使用諸如氨、烴及二氧化碳之介質作為熱介質。亦可使用諸如使用水或氨作為熱介質之吸收型冷凍機,或使用沸石或矽膠作為熱介質之吸附型冷凍機之冷凍機。(i) It is characterized by having a freezer 71 as a single system for generating a plurality of cooling media. That is, unlike the conventional method, three systems are required to produce three types of cooling medium. More specifically, it is characterized in that the cooling source (heat medium of the refrigerator) generated by the refrigerator 71 is distributed through the flow path 72 so as to be immersed in the first cooling medium to specifically cool the first cooling medium tank 7a. A cooling medium, and the cooling energy transmitted from the cooling medium tank 1 cools the second cooling medium tank 7b and the third cooling medium tank 7c via the partition walls Wa and Wb. Here, the refrigerator 71 is not limited to any particular type, and the vapor compression refrigerator as shown in Fig. 2 can be used. It is a highly versatile refrigerator composed of a compressor 71a, a condenser 71b, a receiver 71c, an expansion valve 71d, and an evaporator 71e, and a medium such as ammonia, hydrocarbon, and carbon dioxide can be used as the heat medium. It is also possible to use an absorption type refrigerator such as water or ammonia as a heat medium, or a freezer of an adsorption type refrigerator using zeolite or silicone as a heat medium.

(ii)其特徵在於產生及儲存冷卻介質之冷卻介質槽73係由多個多結構冷卻介質桶7a、7b、7c...組成,在最內的第一冷卻介質桶7a中儲存最低溫度第一冷卻介質,在其周圍以使得第二低溫第二冷卻介質儲存於第二冷卻介質桶7b中,第三低溫冷卻介質儲存於第三冷卻介質桶7c中、且第n低溫冷卻介質儲存於第n個冷卻介質桶7n中之方式而以自低溫至高溫之順序儲存冷卻介質,且自各冷卻介質桶向熱處理單元3u供應冷卻介質(圖2展示n為3之情況, 且在下文中同樣如此)。不同於需要在各桶周圍安置保溫層及個別地控制溫度之習知方法,此組成允許各桶之間的簡單保溫以減少冷卻介質槽73之能量損失,且允許藉由對冷卻介質桶中之至少一者之溫度控制而在所需精確範圍內對相鄰冷卻介質桶進行溫度控制。(ii) The cooling medium tank 73 characterized in that the cooling medium is generated and stored is composed of a plurality of multi-structure cooling medium tanks 7a, 7b, 7c, ..., and stores the lowest temperature in the innermost first cooling medium tank 7a. a cooling medium around the second low temperature second cooling medium is stored in the second cooling medium tank 7b, the third low temperature cooling medium is stored in the third cooling medium tank 7c, and the nth low temperature cooling medium is stored in the first The cooling medium is stored in the order of the low temperature to the high temperature in the n cooling medium tanks 7n, and the cooling medium is supplied from the respective cooling medium tanks to the heat treatment unit 3u (Fig. 2 shows a case where n is 3, And the same is true in the following). Unlike conventional methods that require insulation layers to be placed around each barrel and individually control the temperature, this composition allows for simple insulation between the barrels to reduce energy loss in the cooling medium tank 73 and is allowed to be in the barrel of the cooling medium. At least one of the temperature controls controls the temperature of the adjacent cooling medium barrel within a desired precise range.

(iii)其特徵在於藉由使用第一冷卻介質桶7a與第二冷卻介質桶7b之間由金屬(例如,鋁或不鏽鋼)製成之隔牆Wa來促進自第一冷卻介質桶7a至第二冷卻介質桶7b之冷卻能簡易傳輸,且藉由使用具有其間存在空氣層之由金屬製成之雙層結構的隔牆Wb來抑制自第二冷卻介質桶7b至第三冷卻介質桶7c之冷卻能傳輸的結構。亦需要將第三冷卻介質桶7c之外圓周覆蓋保溫物或其間具有空氣或真空層之雙層結構以防止自周圍空氣之熱傳導,且同時防止由周圍濕氣引起之冷凝。(iii) characterized in that the partition wall Wa made of metal (for example, aluminum or stainless steel) between the first cooling medium tank 7a and the second cooling medium tank 7b is promoted from the first cooling medium tank 7a to the first The cooling of the second cooling medium tank 7b can be easily transmitted, and is suppressed from the second cooling medium tank 7b to the third cooling medium tank 7c by using the partition wall Wb having a two-layer structure made of metal with an air layer therebetween. Cooling the structure that can be transported. It is also necessary to cover the outer circumference of the third cooling medium tank 7c with a two-layer structure having an air or a vacuum layer therebetween to prevent heat conduction from the surrounding air while preventing condensation caused by ambient moisture.

(iv)圖2展示在冷卻介質產生單元7中自冷凍機71至第一冷卻介質桶7a引入冷卻源之流徑72以將桶中之冷卻介質冷卻至低於指定溫度,且藉由安裝於第二冷卻介質桶7b及冷卻介質桶7c中之加熱器Hb及Hc,及冷卻介質溫度控制區段74b及74c將儲存於各桶中之冷卻介質控制在指定溫度之情況。此處,需要在冷卻介質之各者中具有攪拌器Ma、Mb及Mc以便增加冷卻介質之熱擴散。然而,控制在指定溫度下之冷卻介質桶不必為兩個,且若設定冷卻介質桶73之結構及冷卻介質之使用條件,則在各冷卻介質桶處建立熱平衡,且將可藉由控制作為參考(參考冷卻介質) 的冷卻介質桶中冷卻介質中之一者的溫度來控制各冷卻介質桶中冷卻介質之溫度。亦即,其特徵在於具有分別浸入第二冷卻介質桶7b中之第二冷卻介質及第三冷卻介質桶7c中之第三冷卻介質中的加熱器Hb及Hc及溫度感測器Sb及Sc以量測冷卻介質之溫度,且使用加熱器Hb及Hc向經由隔牆Wa由來自第一冷卻介質桶7a之冷卻能過度冷卻之第二冷卻介質桶7b及經由隔牆Wb由來自第二冷卻介質桶7b之冷卻能過度冷卻之第三冷卻介質桶7c適當施加熱量以反饋控制溫度以便將其控制在指定溫度。對於不需要很高冷卻介質溫度精確度的第一冷卻介質桶7a而言,僅連接來自冷凍機71之第一冷卻能之流徑72且在不安裝加熱器及溫度感測器之情況下在功能上不存在特殊問題。(iv) FIG. 2 shows a flow path 72 for introducing a cooling source from the refrigerator 71 to the first cooling medium tank 7a in the cooling medium generating unit 7 to cool the cooling medium in the barrel to a temperature lower than a specified temperature, and by being mounted on The heaters Hb and Hc in the second cooling medium tank 7b and the cooling medium tank 7c, and the cooling medium temperature control sections 74b and 74c control the cooling medium stored in each of the tanks at a specified temperature. Here, it is necessary to have agitators Ma, Mb, and Mc in each of the cooling medium in order to increase the heat diffusion of the cooling medium. However, it is not necessary to control the number of cooling medium tanks at the specified temperature to be two, and if the structure of the cooling medium tank 73 and the use conditions of the cooling medium are set, heat balance is established at each cooling medium barrel, and the control can be used as a reference by control. (Refer to cooling medium) The temperature of one of the cooling media in the cooling medium tank controls the temperature of the cooling medium in each of the cooling medium drums. That is, it is characterized in that the heaters Hb and Hc and the temperature sensors Sb and Sc are respectively immersed in the second cooling medium in the second cooling medium tank 7b and the third cooling medium in the third cooling medium tank 7c. Measuring the temperature of the cooling medium, and using the heaters Hb and Hc to the second cooling medium tank 7b that is excessively cooled by the cooling energy from the first cooling medium tank 7a via the partition wall Wa and from the second cooling medium via the partition wall Wb The third cooling medium tank 7c, which can be overcooled by the cooling of the tub 7b, applies heat appropriately to feedback control the temperature to control it at a specified temperature. For the first cooling medium tank 7a which does not require high cooling medium temperature accuracy, only the flow path 72 from the first cooling energy of the refrigerator 71 is connected and without the heater and the temperature sensor installed There are no special problems in function.

(v)具有上述結構之冷卻產生單元7中之各冷卻介質桶中之溫度分布展示於圖3中。(v) The temperature distribution in each of the cooling medium tanks in the cooling generating unit 7 having the above structure is shown in FIG.

由於最內區域的第一冷卻介質桶7a中之第一冷卻介質如已所述係由來自冷凍機71之流徑72之冷卻能冷卻,因此其在三種冷卻介質中具有最低溫度,且冷凍機71啟動使溫度為,例如,-10至-5℃。此處,由於不同於第二及第三冷卻介質,第一冷卻介質之溫度未受溫度控制,因此由於冷凍機71操作條件(諸如冷凍機周圍之周圍溫度)波動之影響使得其在特定範圍內波動。Since the first cooling medium in the first cooling medium tank 7a of the innermost region is cooled by the cooling energy from the flow path 72 of the refrigerator 71 as described, it has the lowest temperature among the three cooling mediums, and the refrigerator The start of 71 is such that the temperature is, for example, -10 to -5 °C. Here, since the temperature of the first cooling medium is not temperature-controlled unlike the second and third cooling mediums, the fluctuation of the operating conditions of the refrigerator 71 (such as the ambient temperature around the refrigerator) causes it to be within a specific range. fluctuation.

不同於第一冷卻介質桶7a,第二冷卻介質桶7b並非由冷凍機71冷卻,而是由自內部接觸第二冷卻介質之第一冷卻介質桶7a之隔牆Wa傳輸之冷卻能冷卻。此處,由於其 將直接受第一冷卻介質之溫度波動影響,因此在第二冷卻介質桶7b處安裝加熱器Hb,以便藉由對此加熱器Hb之加熱控制將第二冷卻介質之溫度恆定控制在,例如,約0℃,且不同於第一冷卻介質桶7a,將其維持在恆定溫度。此處,亦可利用來自冷凍機71之輻射區段(特定言之,冷凝器71b符合此要求)之熱量代替加熱器Hb之加熱控制,作為加熱源來調整溫度受控第三冷卻介質之溫度。由於此裝置形成與冷凍機71整合之熱處理裝置,因此可藉由有效利用包括冷凍機71之整個熱處理裝置之能量而在無需增添加熱器Hb之功能的情況下實現能量有效及高度精確的溫度控制。此外,藉由將其與加熱器Hc之加熱控制(隨後描述)一起取代,可進一步提高能量效率。Unlike the first cooling medium tank 7a, the second cooling medium tank 7b is not cooled by the refrigerator 71, but is cooled by cooling which is transmitted from the partition wall Wa of the first cooling medium tank 7a which is internally contacted with the second cooling medium. Here, due to its Will be directly affected by the temperature fluctuation of the first cooling medium, so that the heater Hb is installed at the second cooling medium tank 7b, so that the temperature of the second cooling medium is constantly controlled by, for example, heating control of the heater Hb, for example, About 0 ° C, and different from the first cooling medium tank 7a, it is maintained at a constant temperature. Here, the heat from the radiant section of the chiller 71 (specifically, the condenser 71b meets the requirements) may be used instead of the heating control of the heater Hb, and the temperature of the temperature-controlled third cooling medium may be adjusted as a heating source. . Since the apparatus forms a heat treatment apparatus integrated with the refrigerator 71, energy efficient and highly accurate temperature control can be realized without using the function of the heater Hb by effectively utilizing the energy of the entire heat treatment apparatus including the refrigerator 71. . Further, energy efficiency can be further improved by replacing it with heating control (described later) of the heater Hc.

如同第二冷卻介質桶7b,第三冷卻介質桶7c並非由冷凍機71冷卻,而是由自內部接觸第三冷卻介質之第二冷卻介質桶7b之隔牆Wb傳輸之冷卻能冷卻。此處,僅使用傳輸冷卻能,第三冷卻介質桶7c之溫度將因來自周圍空氣之熱擾動及其他因素而波動,但如同第二冷卻介質桶7b之情況,藉由在第三冷卻介質桶7c處安裝加熱器Hc,藉由使用加熱器Hc之熱控制將第三冷卻介質之溫度控制在,例如,約15℃±1℃。此處,亦可利用來自冷凍機71之輻射區段(特定言之,冷凝器71b符合此要求)之熱量代替加熱器Hc之加熱控制。Like the second cooling medium tank 7b, the third cooling medium tank 7c is not cooled by the refrigerator 71, but is cooled by cooling which is transmitted from the partition wall Wb of the second cooling medium tank 7b which is internally contacted with the third cooling medium. Here, only the transmission cooling energy is used, and the temperature of the third cooling medium tank 7c will fluctuate due to thermal disturbance from the surrounding air and other factors, but as in the case of the second cooling medium tank 7b, by the third cooling medium tank The heater Hc is installed at 7c, and the temperature of the third cooling medium is controlled by, for example, about 15 ° C ± 1 ° C by thermal control using the heater Hc. Here, it is also possible to use the heat from the radiant section of the refrigerator 71 (specifically, the condenser 71b meets this requirement) instead of the heating control of the heater Hc.

(vi)圖2展示3個冷卻介質桶以同心方式排列而形成三重結構之情況,但在此裝置中,結構不限於此,而是包 括任何兩個冷卻介質桶以平面或空間方式彼此部分相鄰之任何多層排列。更特定言之,可採用如圖4(A)-(D)中所示以平面方式第一冷卻介質桶7a、第二冷卻介質桶7b及第三冷卻介質桶7c連續相鄰,或一個冷卻介質桶與兩個冷卻介質桶相鄰之結構,或如圖4(E)-(H)中所示以空間方式第一冷卻介質桶7a、第二冷卻介質桶7b及第三冷卻介質桶7c連續相鄰之結構,以及組合此等排列之結構。(vi) FIG. 2 shows a case where three cooling medium tanks are arranged in a concentric manner to form a triple structure, but in this device, the structure is not limited thereto, but is a package. Any two layers of cooling media are arranged in any of a plurality of layers that are partially adjacent to one another in a planar or spatial manner. More specifically, the first cooling medium tank 7a, the second cooling medium tank 7b, and the third cooling medium tank 7c may be continuously adjacent in a planar manner as shown in FIGS. 4(A)-(D), or may be cooled. a structure in which the media barrel is adjacent to the two cooling medium tanks, or a first cooling medium tank 7a, a second cooling medium tank 7b, and a third cooling medium tank 7c in a space manner as shown in FIGS. 4(E)-(H) Continuously adjacent structures, and structures that combine such arrangements.

[關於熱處理單元3u][About heat treatment unit 3u]

熱處理單元3u具備使以氣態供應之氣態液化氣體液化且將其立即以液態液化氣體形式儲存之功能(下文可稱為“液化儲存模式”)及使先前所儲存之液化氣體再氣化且將其以氣態供應之功能(下文可稱為“再汽化模式”)。此處,在如圖1中所示之組成中,液化構件3a、儲存構件3b及汽化構件3c係經由連接區段3d連接,且由於安裝於連接區段3d中之諸如液體供應泵之設備之作用而可以連續方式相繼處理諸如液化氣體之目標物質。The heat treatment unit 3u has a function of liquefying the gaseous liquefied gas supplied in a gaseous state and immediately storing it in the form of a liquid liquefied gas (hereinafter referred to as "liquefaction storage mode") and regasifying the previously stored liquefied gas and The function of supplying in a gaseous state (hereinafter may be referred to as "re-evaporation mode"). Here, in the composition as shown in FIG. 1, the liquefaction member 3a, the storage member 3b, and the vaporization member 3c are connected via the connection section 3d, and due to equipment such as a liquid supply pump installed in the connection section 3d The target substance such as a liquefied gas can be successively processed in a continuous manner.

此處,如圖5中所示,液化構件3a係安裝於液化氣體引入管3e中,產生熱處理單元3u,其係置放於儲存構件3b之上部作為使液化氣體液化之預冷卻裝置。由冷卻介質循環泵Pa自上述第一冷卻介質桶7a供應且自液化構件3a下部之冷卻介質引入區段3aa引入之第一冷卻介質冷卻液化構件3a中之液化氣體引入管3e,自冷卻構件3a上部之冷卻介質排出區段3ab排出,且返回第一冷卻介質桶7a,以便持續循環新的第一冷卻介質。以氣態引入液化氣體引入 管3e中之液化氣體沿液化氣體引入管3e流動,同時隨著其被此液化構件3a快速冷卻而冷凝,且以液態儲存於位於液化構件3a下部之儲存構件3b中。此外,將儲存構件3b之外表面、及冷卻介質引入管3aa及冷卻介質排出管3ab用保溫覆蓋物3be及3ae覆蓋以減少冷卻能損失且防止冷凝。Here, as shown in Fig. 5, the liquefaction member 3a is attached to the liquefied gas introduction pipe 3e, and a heat treatment unit 3u is produced, which is placed on the upper portion of the storage member 3b as a pre-cooling device for liquefying the liquefied gas. The liquefied gas introduction pipe 3e of the first cooling medium cooling liquefaction member 3a supplied from the first cooling medium tank 7a and introduced from the cooling medium introduction section 3aa at the lower portion of the liquefaction member 3a by the cooling medium circulation pump Pa, the self-cooling member 3a The upper cooling medium discharge section 3ab is discharged and returned to the first cooling medium tank 7a to continuously circulate the new first cooling medium. Introducing liquefied gas into a gaseous state The liquefied gas in the tube 3e flows along the liquefied gas introduction pipe 3e while being condensed as it is rapidly cooled by the liquefaction member 3a, and is stored in a liquid state in the storage member 3b located at the lower portion of the liquefaction member 3a. Further, the outer surface of the storage member 3b, and the cooling medium introduction pipe 3aa and the cooling medium discharge pipe 3ab are covered with the heat insulating covers 3be and 3ae to reduce the cooling energy loss and prevent condensation.

如圖5中所示,儲存構件3b以一定方式裝備冷卻夾套3bb,使得其包圍儲存自液化氣體引入管3e引入之液化氣體之容器3ba,冷卻介質引入口3bc係安裝於冷卻夾套3bb之下部且冷卻介質排出口3bd係安裝於冷卻夾套3bb之上部,冷卻介質流經冷卻夾套3bb內部之空間3be,且因此儲存構件3b具有允許使用第二介質循環泵Pb使第二冷卻介質在第二冷卻介質桶7b之間循環的結構。冷卻夾套3bb之外表面,及冷卻介質引入口3bc及冷卻介質排出口3bd具有保溫覆蓋管道以減少冷卻能損失且防止冷卻夾套3bb之外表面及冷卻介質循環管道表面處之冷凝。As shown in Fig. 5, the storage member 3b is equipped with a cooling jacket 3bb in such a manner that it surrounds the container 3ba storing the liquefied gas introduced from the liquefied gas introduction pipe 3e, and the cooling medium introduction port 3bc is attached to the cooling jacket 3bb. The lower portion and the cooling medium discharge port 3bd are installed above the cooling jacket 3bb, and the cooling medium flows through the space 3be inside the cooling jacket 3bb, and thus the storage member 3b has a second medium circulation pump Pb allowing the second cooling medium to be used The structure that circulates between the second cooling medium tanks 7b. The outer surface of the cooling jacket 3bb, and the cooling medium introduction port 3bc and the cooling medium discharge port 3bd have a heat insulating covering pipe to reduce cooling energy loss and prevent condensation at the outer surface of the cooling jacket 3bb and the surface of the cooling medium circulation pipe.

汽化構件3c基本上具有與圖5中所示之儲存構件3b相同之結構,且由儲存液化氣體之容器3ca(未圖示)及容器3ca周圍之冷卻夾套3cb(未圖示)組成,該冷卻夾套3cb允許在第三冷卻介質桶7c之間使用第三冷卻介質循環泵Pc(未圖示)循環供應第三冷卻介質。其亦裝備有液化氣體排出管3f用於排出氣化液化氣體。The vaporization member 3c basically has the same structure as the storage member 3b shown in Fig. 5, and is composed of a container 3ca (not shown) for storing a liquefied gas and a cooling jacket 3cb (not shown) around the container 3ca, which The cooling jacket 3cb allows the third cooling medium to be circulated and supplied between the third cooling medium tanks 7c using the third cooling medium circulation pump Pc (not shown). It is also equipped with a liquefied gas discharge pipe 3f for discharging the vaporized liquefied gas.

除此等結構以外,亦可應用各種其他類型之結構。舉例而言,如圖6中所示,存在藉由將載氣引入液相中來使儲存於容器3ba中之液態液化氣體氣化之氣泡方法,且在此 方法中安裝載氣引入區段3cc且載氣引入管3cd係插入在液相液化氣體之最底層附近。甚至在因低蒸氣壓而難以確保足夠供應速率之情況下,仍可藉由使液化氣體伴隨具有供應能力之載氣來提高氣態供應能力。此外,當需要供應低濃度液化氣體或當混合及使用多種類型之氣體時,可藉由使液化氣體伴隨作為載氣的諸如惰性氣體或其他類型氣體之氣體來供應符合操作條件之液化氣體。In addition to these structures, various other types of structures can be applied. For example, as shown in FIG. 6, there is a bubble method of vaporizing a liquid liquefied gas stored in a container 3ba by introducing a carrier gas into a liquid phase, and here In the method, a carrier gas introduction section 3cc is installed and a carrier gas introduction pipe 3cd is inserted in the vicinity of the lowest layer of the liquid phase liquefied gas. Even in the case where it is difficult to ensure a sufficient supply rate due to the low vapor pressure, the gas supply capacity can be improved by causing the liquefied gas to accompany the carrier gas having the supply ability. Further, when it is required to supply a low concentration liquefied gas or when a plurality of types of gases are mixed and used, the liquefied gas according to the operating conditions can be supplied by causing the liquefied gas to accompany the gas such as an inert gas or other type of gas as a carrier gas.

此時,控制伴隨載氣之液化氣體之量(此通常稱為“吸取速率”)可藉由控制載氣之流動速率來完成。亦即,在對其加以控制從而使液相溫度大致恆定之情況下,可藉由在載氣流徑中安裝質流控制器3mf來增加吸取速率且藉由控制其來增加載氣流動速率。此外,在足以恰好使液化氣體伴隨載氣之情況下,可使用使載氣流過液相表面上方而不使用氣泡之方法,或藉由自主汽化構件1b進一步向載氣中添加載氣之稀釋方法。對於載氣而言,需要使用不妨礙氣體消耗製程之類型的氣體。通常,主要使用諸如He、Ar及N2 之惰性氣體,但當如在磊晶晶圓處理製程中使用SiHCl3 作為液化氣體時,需要使用H2At this time, controlling the amount of liquefied gas accompanying the carrier gas (this is commonly referred to as "absorption rate") can be accomplished by controlling the flow rate of the carrier gas. That is, in the case where it is controlled so that the liquidus temperature is substantially constant, the suction rate can be increased by installing the mass flow controller 3mf in the carrier gas flow path and the carrier gas flow rate can be increased by controlling it. Further, in a case where the liquefied gas is accompanied by the carrier gas, a method of allowing the carrier gas to flow over the surface of the liquid phase without using bubbles, or a method of further adding a carrier gas to the carrier gas by the autonomous vaporization member 1b may be used. . For the carrier gas, it is necessary to use a gas of a type that does not hinder the gas consumption process. Generally, inert gases such as He, Ar, and N 2 are mainly used, but when SiHCl 3 is used as the liquefied gas as in the epitaxial wafer processing process, H 2 is required .

亦可使用如圖6(B)中所示之結構,其中在冷卻夾套3cb內部空間3ce之底面安裝將第三冷卻介質垂直噴射至容器3ca底表面上之噴嘴3cf。藉由具有第三冷卻介質可在流過的同時接觸冷卻夾套3cb之外圓周及底部以自容器3ca之周邊供應加熱能量的空間3ce,且藉由將第三冷卻介質垂直噴射至容器3ca之底表面以促進自第三冷卻介質至容器3ca或 如箭頭Fa及Fb所示藉由提供儲存於其內部之液化氣體至傳導製程之熱傳導,可提供液化氣體的穩定供應且確保針對液化氣體之溫度波動因素的迅速熱補充。此外,如圖6(B)中所示,藉由在冷卻介質引入系統中安裝浸入加熱器Hn以加熱所供應之第三冷卻介質,可以進一步穩定的壓力供應液化氣體,此係因為可對應於液化氣體之供應速率(亦即,汽化量)迅速補充自液相液化氣體帶走之汽化熱。It is also possible to use a structure as shown in Fig. 6(B) in which a nozzle 3cf for vertically ejecting the third cooling medium onto the bottom surface of the container 3ca is mounted on the bottom surface of the inner space 3ce of the cooling jacket 3cb. By having a third cooling medium, the outer circumference and the bottom of the cooling jacket 3cb can be contacted while flowing to supply the space 3ce for heating energy from the periphery of the container 3ca, and the third cooling medium is vertically sprayed to the container 3ca. a bottom surface to promote from the third cooling medium to the container 3ca or By providing heat transfer from the liquefied gas stored therein to the conduction process as indicated by arrows Fa and Fb, a stable supply of liquefied gas can be provided and rapid thermal replenishment for temperature fluctuations of the liquefied gas can be ensured. Further, as shown in FIG. 6(B), by installing the immersion heater Hn in the cooling medium introduction system to heat the supplied third cooling medium, the liquefied gas can be supplied with a further stable pressure because it can correspond to The supply rate of the liquefied gas (i.e., the amount of vaporization) rapidly replenishes the heat of vaporization carried away from the liquid liquefied gas.

[本發明之熱處理裝置之另一組成實施例][Another constituent embodiment of the heat treatment apparatus of the present invention]

下文基於圖7描述本發明之熱處理裝置之另一組成實施例。儘管基本組件與上文圖1中所示之組成相同,但其具有至少兩個熱處理單元3u,其各自充當液化構件3a、儲存構件3b及汽化構件3c,且冷卻介質循環轉換系統由冷卻介質產生單元7、3個循環泵Pa、Pb及Pc及4個流徑換向閥V1-V4組成以具有獨立地及交替地轉換此等熱處理單元之功能。圖7展示圖左側所示之熱處理單元3uA處於“液化儲存模式”且圖右側所示之熱處理單元3uB處於“再汽化模式”(步驟1)之情況,且在指定持續時間之後在此等模式之間進行轉換(步驟2)。藉由週期性重複此轉換(步驟3),可使以氣態供應之液化氣體再氣化以連續供應液化氣體。Another constituent embodiment of the heat treatment apparatus of the present invention is described below based on Fig. 7 . Although the basic assembly is the same as that shown in FIG. 1 above, it has at least two heat treatment units 3u each serving as the liquefaction member 3a, the storage member 3b, and the vaporization member 3c, and the cooling medium circulation conversion system is produced by the cooling medium. The unit 7, the three circulating pumps Pa, Pb and Pc and the four flow path switching valves V1-V4 are composed to have the function of independently and alternately converting the heat treatment units. Figure 7 shows the case where the heat treatment unit 3uA shown on the left side of the figure is in the "liquefied storage mode" and the heat treatment unit 3uB shown on the right side of the figure is in the "re-evaporation mode" (step 1), and in the mode after the specified duration Convert between (step 2). By periodically repeating this conversion (step 3), the liquefied gas supplied in a gaseous state can be regasified to continuously supply the liquefied gas.

[關於冷卻介質循環轉換系統][About cooling medium circulation conversion system]

特定言之,在各步驟所用冷卻介質係使用流徑換向閥V1-V4來轉換,且熱處理單元3uA及熱處理單元3uB之操作模式、熱處理目標及所用冷卻介質係如表2中所示。Specifically, the cooling medium used in each step is converted using the flow path switching valves V1 - V4, and the operation modes of the heat treatment unit 3uA and the heat treatment unit 3uB, the heat treatment target, and the cooling medium used are as shown in Table 2.

流徑換向閥V1具有將由第二冷卻介質循環泵Pb壓力供應之第二冷卻介質饋送至兩個冷卻目標熱處理單元3uA或熱處理單元3uB中之任一者(圖7展示將其饋送至熱處理單元3uA之情況),且同時將由第三冷卻介質循環泵Pc壓力供應之第三冷卻介質饋送至另一熱處理單元(在圖7中所示之此情況中其為熱處理單元3uB)之功能。流徑換向閥V2具有轉換流徑使得自熱處理單元3uA或熱處理單元3uB返回之第二及第三冷卻介質分別返回至第二冷卻介質桶7b及第三冷卻介質桶7c之功能。流徑換向閥V3及流徑換向閥V4係用於控制是否將第一冷卻介質饋送至兩個液化構件3aA或3aB中之任一者,且圖7展示第一冷卻介質循環供應至構成熱處理單元3uA之液化構件3aA,而不供應 至構成熱處理單元3uB之液化構件3aB之情況。The flow path switching valve V1 has a second cooling medium that is supplied by the second cooling medium circulation pump Pb pressure feed to either of the two cooling target heat treatment units 3uA or the heat treatment unit 3uB (FIG. 7 shows feeding it to the heat treatment unit) In the case of 3uA), and at the same time, the third cooling medium supplied by the third cooling medium circulation pump Pc is fed to the function of another heat treatment unit (which is the heat treatment unit 3uB in the case shown in Fig. 7). The flow path switching valve V2 has a function of switching the flow path so that the second and third cooling mediums returned from the heat treatment unit 3uA or the heat treatment unit 3uB are returned to the second cooling medium tank 7b and the third cooling medium tank 7c, respectively. The flow path switching valve V3 and the flow path switching valve V4 are for controlling whether to feed the first cooling medium to either of the two liquefied members 3aA or 3aB, and FIG. 7 shows that the first cooling medium is circulated to the composition. Heat treatment unit 3uA liquefaction member 3aA, not supplied The case of the liquefied member 3aB constituting the heat treatment unit 3uB.

此等4個流徑換向閥V1-V4在轉換兩個熱處理單元3uA及3uB之操作模式時一起啟動。圖7展示由2位4向換向閥組成之流徑換向閥V1-V4之一實例,但不必說亦可使用3向流徑換向閥之組合,或開關功能換向閥之組合來實現相同功能。These four flow path reversing valves V1-V4 are activated together when switching the operation modes of the two heat treatment units 3uA and 3uB. Figure 7 shows an example of a flow path reversing valve V1-V4 consisting of a 2-position 4-way reversing valve, but it goes without saying that a combination of a 3-way flow reversing valve or a combination of a switching function reversing valve can be used. Achieve the same function.

[關於熱處理單元3uA及3uB][About heat treatment unit 3uA and 3uB]

在此裝置中,熱處理單元3uA及3uB具有對應於圖7中之此個別順序之“液化儲存模式”及“再汽化模式”之功能。在表2中所示之步驟1中,氣態液化氣體經由打開的換向閥33a及液化氣體引入管3eA引入熱處理單元3uA中,且由液化構件3aA液化且由儲存構件3bA儲存,且同時經再氣化之液化氣體經由液化氣體排出管3fB及打開的換向閥33d排出。此外,在步驟2中,其經由打開的換向閥33b及液化氣體引入管3eB引入熱處理單元3uB中,且同時經再氣化之液化氣體經由液化氣體排出管3fA及打開的換向閥33c排出。In this apparatus, the heat treatment units 3uA and 3uB have functions corresponding to the "liquefied storage mode" and the "re-evaporation mode" in this individual order in Fig. 7. In the step 1 shown in Table 2, the gaseous liquefied gas is introduced into the heat treatment unit 3uA via the open switching valve 33a and the liquefied gas introduction pipe 3eA, and is liquefied by the liquefaction member 3aA and stored by the storage member 3bA, and simultaneously The vaporized liquefied gas is discharged through the liquefied gas discharge pipe 3fB and the opened switching valve 33d. Further, in step 2, it is introduced into the heat treatment unit 3uB via the open switching valve 33b and the liquefied gas introduction pipe 3eB, and at the same time, the regasified liquefied gas is discharged through the liquefied gas discharge pipe 3fA and the opened switching valve 33c. .

亦即,當熱處理單元3uA處於“液化儲存模式”時,換向閥33a打開且換向閥33c關閉,且在處於“再汽化模式”之熱處理單元3uB處,換向閥33b關閉且換向閥33d打開。相反地,當熱處理單元3uB處於“液化儲存模式”時,換向閥33b打開且換向閥33d關閉,且在處於“再汽化模式”之熱處理單元3uA處,換向閥33a關閉且換向閥33c打開。在圖7中,換向閥33a-33d以白色展示打開狀態 且以黑色展示關閉狀態。That is, when the heat treatment unit 3uA is in the "liquefaction storage mode", the reversing valve 33a is opened and the reversing valve 33c is closed, and at the heat treatment unit 3uB in the "re-evaporation mode", the reversing valve 33b is closed and the reversing valve 33d opens. Conversely, when the heat treatment unit 3uB is in the "liquefaction storage mode", the reversing valve 33b is opened and the reversing valve 33d is closed, and at the heat treatment unit 3uA in the "re-evaporation mode", the reversing valve 33a is closed and the reversing valve 33c opens. In Fig. 7, the reversing valves 33a-33d are shown in an open state in white. It is shown in black as closed.

兩個熱處理單元3uA及3uB係經設計成藉由交替地轉換控制以操作“液化儲存模式”及“再汽化模式”之功能來連續供應液化氣體。當在處於“再汽化模式”之熱處理單元3uB中剩餘液體量降至低於指定含量時進行轉換。因為偵測剩餘量通常係藉由量測重量來完成,因此將兩個槽安裝成使其處於荷重計32上。The two heat treatment units 3uA and 3uB are designed to continuously supply the liquefied gas by alternately switching control to operate the functions of the "liquefaction storage mode" and the "re-evaporation mode". The conversion is performed when the amount of remaining liquid in the heat treatment unit 3uB in the "re-evaporation mode" falls below a specified level. Since the detection of the remaining amount is usually done by measuring the weight, the two slots are mounted such that they are on the load cell 32.

下文提供處於“液化儲存模式”之熱處理單元3uA之進一步詳細說明。第一冷卻介質(例如,-10至-5℃)循環供應至熱處理單元3uA,經由打開的換向閥33a供應之氣態液化氣體在此液化構件3a處被冷卻及液化,且液相液化氣體逐漸儲存於此儲存構件3bA中。由於儲存構件3bA由在其周圍循環之第二冷卻介質(例如,0℃)冷卻,因此其內壓可保持足夠低以允許連續液化及儲存液化氣體。由於在此期間換向閥33c關閉,因此不進行自熱處理單元3uA供應液化氣體,且因此僅專門液化及儲存以氣態供應之液化氣體。當以此方式儲存之量達到預定設計量時,熱處理單元3uA之換向閥33a自動關閉,且同時溫度控制之設定溫度自動自先前液化設定轉換至再汽化模式設定。同時,將第二冷卻介質傳送至熱處理單元3uA之泵Pb及將第一冷卻介質傳送至液化構件3aA之泵Pa停止啟動。當儲存於熱處理單元3uA中之液化氣體之溫度達到新設定溫度時,泵Pb再啟動,且備用液體溫度啟動開/關以維持“再汽化模式”溫度。此使得能夠藉由將備用“液化儲存模式”側之液體 溫度預轉移至“再汽化模式”溫度設定來避免模式轉換時之壓力不足狀態。作為取代直接測量溫度偵測液化氣體溫度的方法,圖7展示使用該方法的例子,其基於液化氣體的特定溫度及飽和蒸氣壓圖藉由壓力感測器34A偵測液化氣體的蒸氣壓而操作。直接將溫度感測器插入儲存的液化氣體的方法應顯而易見亦可用作偵測液化氣體溫度的其他方法。Further details of the heat treatment unit 3uA in the "liquefied storage mode" are provided below. The first cooling medium (for example, -10 to -5 ° C) is cyclically supplied to the heat treatment unit 3uA, and the gaseous liquefied gas supplied via the opened switching valve 33a is cooled and liquefied at the liquefaction member 3a, and the liquid liquefied gas gradually It is stored in this storage member 3bA. Since the storage member 3bA is cooled by the second cooling medium (for example, 0 ° C) circulating therearound, its internal pressure can be kept low enough to allow continuous liquefaction and storage of the liquefied gas. Since the switching valve 33c is closed during this period, the liquefied gas is not supplied from the heat treatment unit 3uA, and thus only the liquefied gas supplied in a gaseous state is exclusively liquefied and stored. When the amount stored in this manner reaches a predetermined design amount, the switching valve 33a of the heat treatment unit 3uA is automatically turned off, and at the same time, the set temperature of the temperature control is automatically switched from the previous liquefaction setting to the re-vaporization mode setting. At the same time, the pump Pb conveying the second cooling medium to the heat treatment unit 3uA and the pump Pa conveying the first cooling medium to the liquefaction member 3aA are stopped. When the temperature of the liquefied gas stored in the heat treatment unit 3uA reaches a new set temperature, the pump Pb is restarted, and the standby liquid temperature is turned on/off to maintain the "re-evaporation mode" temperature. This enables the liquid to be placed on the side of the alternate "liquefied storage mode" The temperature is pre-transferred to the "re-evaporation mode" temperature setting to avoid under-pressure conditions during mode switching. As a method of directly measuring the temperature of the liquefied gas instead of the temperature measurement, FIG. 7 shows an example of using the method, which is operated by detecting the vapor pressure of the liquefied gas by the pressure sensor 34A based on the specific temperature and saturated vapor pressure map of the liquefied gas. . The method of directly inserting the temperature sensor into the stored liquefied gas should be apparently used as an alternative method for detecting the temperature of the liquefied gas.

同時,在處於“再汽化模式”之熱處理單元3uB處,由於換向閥33b關閉,因此不進行供應氣態液化氣體。此外,由於因流徑換向閥V3及V4使得第一冷卻介質不供應至液化構件3aB,因此冷凝功能亦未啟動。此外,由於換向閥33d打開,因此存在於汽化構件3cB中所儲存之液相液化氣體上部的氣相區段處於可排出狀態。在裝備液化氣體排出管3fB之該等設施中存在液化氣體消耗之情況下,該氣相區段之壓力經由液化氣體排出管3fB降低,但汽化構件3cB內部的液相液化氣體迅速氣化而補償壓力損失。由於第三冷卻介質(例如,15℃)供應至汽化構件3cB,因此汽化構件3cB中之液化氣體保持在15℃,且供應穩定在等於15℃下飽和蒸氣壓之壓力下的氣態液化氣體。當汽化構件3cB中之氣體量降至低於指定含量時,其轉換至自已在液化儲存模式中儲存液化氣體之熱處理單元3uA供應。此時,流徑換向閥V1-V4及換向閥33a及33b均立即換向,且泵Pa及Pb打開,換向閥33c打開且換向閥33d打開。At the same time, at the heat treatment unit 3uB in the "re-evaporation mode", since the switching valve 33b is closed, the supply of the gaseous liquefied gas is not performed. Further, since the first cooling medium is not supplied to the liquefaction member 3aB due to the flow path switching valves V3 and V4, the condensing function is not activated. Further, since the switching valve 33d is opened, the gas phase section existing in the upper portion of the liquid phase liquefied gas stored in the vaporization member 3cB is in a dischargeable state. In the case where liquefied gas is consumed in such facilities equipped with the liquefied gas discharge pipe 3fB, the pressure of the gas phase section is lowered via the liquefied gas discharge pipe 3fB, but the liquid phase liquefied gas inside the vaporization member 3cB is rapidly vaporized to compensate Pressure loss. Since the third cooling medium (for example, 15 ° C) is supplied to the vaporization member 3cB, the liquefied gas in the vaporization member 3cB is maintained at 15 ° C, and the gaseous liquefied gas which is stabilized at a pressure equal to the saturated vapor pressure at 15 ° C is supplied. When the amount of gas in the vaporization member 3cB falls below a specified level, it is switched to the heat treatment unit 3uA which has stored the liquefied gas in the liquefaction storage mode. At this time, the flow path switching valves V1 - V4 and the switching valves 33a and 33b are immediately reversed, and the pumps Pa and Pb are opened, the switching valve 33c is opened, and the switching valve 33d is opened.

兩個熱處理單元3uA及3uB各自另外裝備使用上述冷 卻介質循環轉換系統之溫度控制功能以便將其冷卻且將其溫度維持在特定水平。亦即,其具有量測液化構件3a(3aA及/或3aB)之液化溫度之構件,量測儲存構件3b(3bA及/或3bB)之儲存溫度之構件,量測汽化構件3c(3cA及/或3cB)中之液相液化氣體溫度之構件,及控制液化溫度、儲存溫度及液相液化氣體溫度之構件(未圖示),以便將以氣態供應之液化氣體冷卻至足夠低的溫度以供液化,且接著對其進行溫度控制以將其再氣化及供應。更特定言之,需要反饋控制處於“液化儲存模式”之熱處理單元3uA之溫度控制使得容器3ba底部之壁表面溫度成為預定溫度;另一方面,處於“再汽化模式”之熱處理單元3uB之溫度控制由安裝於汽化構件3c之液化氣體引入管3fB中之壓力感測器34B持續監控且反饋控制使得使用此監控壓力值自液化氣體特有的“飽和蒸氣壓比對溫度”特性曲線計算出之液體溫度成為預定溫度。The two heat treatment units 3uA and 3uB are each additionally equipped with the above-mentioned cold However, the temperature control function of the medium circulation system is to cool it and maintain its temperature at a specific level. That is, it has a member for measuring the liquefaction temperature of the liquefaction member 3a (3aA and/or 3aB), a member for measuring the storage temperature of the storage member 3b (3bA and/or 3bB), and the measurement vaporization member 3c (3cA and / Or a component of the liquid liquefied gas temperature in 3cB), and a member (not shown) for controlling the liquefaction temperature, the storage temperature, and the temperature of the liquid liquefied gas to cool the liquefied gas supplied in a gaseous state to a sufficiently low temperature for supply Liquefaction, and then temperature control to regasify and supply it. More specifically, it is required to control the temperature control of the heat treatment unit 3uA in the "liquefaction storage mode" so that the wall surface temperature of the bottom portion of the container 3ba becomes a predetermined temperature; on the other hand, the temperature control of the heat treatment unit 3uB in the "re-evaporation mode" The pressure sensor 34B installed in the liquefied gas introduction pipe 3fB of the vaporization member 3c is continuously monitored and feedback control is used to calculate the liquid temperature from the "saturated vapor pressure ratio versus temperature" characteristic curve unique to the liquefied gas using the monitored pressure value. Become the predetermined temperature.

上文說明因兩個熱處理單元3uA及3uB而具備“液化儲存模式”與“再汽化模式”之間的轉換功能之情況,但此裝置不限於此配置,且亦可使用單一儲存槽31在“液化儲存模式”與“再汽化模式”之間進行批次轉換。The case where the conversion function between the "liquefaction storage mode" and the "re-evaporation mode" is provided by the two heat treatment units 3uA and 3uB is described above, but the device is not limited to this configuration, and a single storage tank 31 may be used. Batch conversion between liquefaction storage mode and re-vaporization mode.

<本發明之液化氣體供應裝置之組成實施例><Composition Example of Liquefied Gas Supply Device of the Present Invention>

圖8為展示本發明之液化氣體供應裝置(下文稱為“此供應裝置”)之基本組成實施例之概括圖。其由以下構件組成:安裝於與安置作為消耗設施之處理裝置5之室(下文稱為“清潔室30”)分離的專用液化氣體室(下文稱為 “液化氣體供應室10”)中之主液化供應設施1,與處理裝置相鄰安置之副液化氣體供應設施3(對應於熱處理裝置3),連接上述兩者之主管道系統2,及連接副液化氣體供應設施3與處理裝置5之副管道系統4。在圖1中,處理裝置5係安置於清潔室30中之清潔室底板30a上,且副液化氣體供應設施3係安置於充氣底板30b上。填充於主液化氣體供應設施1之填充容器1a中之液化氣體在主汽化構件1b處氣化。氣態液化氣體經由具備主管道2a之主管道系統2以氣態饋送至副液化氣體供應設施3。以氣態饋入之液化氣體由副液化氣體供應設施3之再液化構件3a再液化,且接著以液態儲存於儲存構件3b中。所儲存之液化氣體在副汽化構件3c處氣化。轉變為氣態之液化氣體藉由具有副管道4a之副管道系統4以氣態饋送至處理裝置5。來自處理裝置5之包括所饋入液化氣體之廢氣經由廢氣處理裝置6排出。Fig. 8 is a schematic view showing a basic constitutional embodiment of a liquefied gas supply device (hereinafter referred to as "this supply device") of the present invention. It consists of a dedicated liquefied gas chamber (hereinafter referred to as a separate chamber from a chamber in which the treatment device 5 as a consumption facility is disposed (hereinafter referred to as "cleaning chamber 30"). The main liquefaction supply facility 1 in the "liquefied gas supply chamber 10"), the auxiliary liquefied gas supply facility 3 (corresponding to the heat treatment device 3) disposed adjacent to the processing device, the main piping system 2 connecting the two, and the connection pair The liquefied gas supply facility 3 and the secondary piping system 4 of the processing unit 5. In Fig. 1, the processing device 5 is disposed on the clean room floor 30a in the clean room 30, and the auxiliary liquefied gas supply device 3 is disposed on the inflatable floor 30b. The liquefied gas filled in the filling container 1a of the main liquefied gas supply facility 1 is vaporized at the main vaporization member 1b. The gaseous liquefied gas is fed to the auxiliary liquefied gas supply facility 3 in a gaseous state via the main piping system 2 having the main pipe 2a. The liquefied gas fed in a gaseous state is reliquefied by the reliquefaction member 3a of the auxiliary liquefied gas supply facility 3, and then stored in the storage member 3b in a liquid state. The stored liquefied gas is vaporized at the sub-vaporization member 3c. The liquefied gas converted to the gaseous state is fed to the treatment device 5 in a gaseous state by the secondary piping system 4 having the secondary conduit 4a. The exhaust gas from the processing device 5 including the fed liquefied gas is discharged through the exhaust gas treatment device 6.

由於安裝及移除自液化氣體製造廠傳遞來的填充容器1a之工作係完全且僅在液化氣體供應室10中完成,因此可避免在一般操作者工作及安置處理裝置5之清潔室5中向大氣打開管道之危險工作。因此,可將包括低蒸氣壓液化氣體之所有液化氣體自清潔室30完全分離,這在傳統上是不可能的,且提供集中供應、顯著提高的安全性及工作效率。各單元之組成元件在下文描述。Since the operation of installing and removing the filling container 1a transferred from the liquefied gas manufacturing plant is completely and only completed in the liquefied gas supply chamber 10, it can be avoided in the cleaning room 5 of the general operator working and arranging the processing device 5. The dangerous work of opening the pipeline in the atmosphere. Therefore, it is conventionally impossible to completely separate all the liquefied gases including the low vapor pressure liquefied gas from the clean room 30, and to provide a concentrated supply, remarkably improved safety and work efficiency. The constituent elements of each unit are described below.

[主液化氣體供應設施1][Main liquefied gas supply facility 1]

詳言之,如圖9中所示,主液化氣體供應設施1在其 外殼1z內容納填充有液態液化氣體之填充容器1a,且此外殼1Z裝備有內置溫度控制系統(未圖示),其由以下構件組成:將填充容器1a中之液化氣體溫度降至如主汽化構件1b之預定溫度之冷卻區段1c,及補充液化氣體氣化及供應時之汽化熱損失使得液化氣體溫度不達到低於預定溫度的加熱區段1d。對於冷卻區段1c而言,若其可將氣體自填充容器1a之底部、側面或環境溫度(通常10-30℃)冷卻大致10℃,則係足夠的,且可應用(例如)使用來自如圖9中所示之冷卻介質單元1e之作為冷卻源之冷卻介質的方法。對於加熱區段1d而言,可應用使用諸如經加熱空氣或燈之熱源以(例如)加熱填充容器1a之底部或側面之方法。In detail, as shown in FIG. 9, the main liquefied gas supply facility 1 is in its The outer casing 1z houses a filling container 1a filled with a liquid liquefied gas, and the outer casing 1Z is equipped with a built-in temperature control system (not shown) which is composed of the following components: the temperature of the liquefied gas in the filling container 1a is lowered to the main vaporization The cooling section 1c of the predetermined temperature of the member 1b, and the vaporization heat loss when the liquefied gas is replenished and supplied, causes the liquefied gas temperature to not reach the heating section 1d lower than the predetermined temperature. For the cooling section 1c, if it can cool the gas from the bottom, side or ambient temperature (usually 10-30 ° C) of the filling container 1a by approximately 10 ° C, it is sufficient and can be applied, for example, from The method of the cooling medium unit 1e shown in Fig. 9 as a cooling medium for the cooling source. For the heating section 1d, a method of filling the bottom or side of the container 1a with, for example, heating using a heat source such as heated air or a lamp can be applied.

此處,該設施亦裝備量測填充容器中之液相液化氣體溫度To之構件(未圖示),及控制填充容器中之液相液化氣體溫度To之構件(未圖示)。然而,供傳遞的壓力容器亦為填充容器1a,且為在液化氣體製造廠與液化氣體供應裝置之間往返運輸的壓力容器,難以直接安置溫度感測器以量測容器內液化氣體之溫度。此處,藉由使用出口管道處之壓力感測器(未圖示)持續監控氣化液化氣體之壓力且使用此壓力值,可自液化氣體特有的“飽和蒸氣壓比對溫度”特性計算出填充容器1a內液化氣體之液相溫度,且自量測之迅速性及精確性之觀點來看需要使用此方法。在此裝置中,需要採用反饋控制方法以將以此方式獲得之液相溫度維持在預定溫度。Here, the facility is also equipped with means (not shown) for measuring the liquid-phase liquefied gas temperature To in the filling container, and means for controlling the liquid-phase liquefied gas temperature To in the filling container (not shown). However, the pressure vessel for transfer is also the filling vessel 1a, and is a pressure vessel for transporting back and forth between the liquefied gas manufacturing plant and the liquefied gas supply device, and it is difficult to directly place the temperature sensor to measure the temperature of the liquefied gas in the vessel. Here, by continuously monitoring the pressure of the vaporized liquefied gas using a pressure sensor (not shown) at the outlet pipe and using this pressure value, the "saturated vapor pressure ratio versus temperature" characteristic unique to the liquefied gas can be calculated. The liquid phase temperature of the liquefied gas in the vessel 1a is filled, and this method is required from the viewpoint of the rapidity and accuracy of the measurement. In this apparatus, it is necessary to employ a feedback control method to maintain the liquidus temperature obtained in this manner at a predetermined temperature.

由於偵測填充容器1a中剩餘液化氣體之量通常係藉由 稱重來完成,因此將填充容器1a安裝於荷重計1f上,且當剩餘量變低時,替換填充容器1a。Since the amount of remaining liquefied gas in the filling container 1a is usually detected by The weighing is completed, so that the filling container 1a is mounted on the load meter 1f, and when the remaining amount becomes low, the filling container 1a is replaced.

[主氣態供應管道系統2][Main gas supply pipeline system 2]

主液化氣體供應設施1與副液化氣體供應設施3之間的主管道2a(亦即,主管道系統2)除具有適合液化氣體供應流動速率之管直徑外無特殊規格,且通常用於半導體液化氣體供應管道中之彼等規格將足夠。此外,在習知技術中出於防止在主管道2a中再液化之目的所需要的諸如熱保溫及加熱裝置之構件完全不需要。然而,如上所述,由於許多低蒸氣壓液化氣體具有腐蝕性及毒性,因此通常使用施用內表面處理或內表面加工的不鏽鋼管道(SUS)。在主氣態供應管道系統2中,需要量測系統環境溫度Ta之分布,自該資料估算主氣態供應管道系統2之環境溫度Ta波動範圍之下限,且將主液化氣體供應設施1中之液相液化氣體溫度To之控制溫度設定在低於該下限。The main pipe 2a (i.e., the main pipe system 2) between the main liquefied gas supply facility 1 and the auxiliary liquefied gas supply facility 3 has no special specifications except for a pipe diameter suitable for the flow rate of the liquefied gas supply, and is generally used for semiconductor liquefaction. Their specifications in the gas supply line will be sufficient. Further, members such as thermal insulation and heating means required for the purpose of preventing reliquefaction in the main pipe 2a are not required at all in the prior art. However, as described above, since many low vapor pressure liquefied gases are corrosive and toxic, stainless steel pipes (SUS) to which internal surface treatment or inner surface processing is applied are generally used. In the main gaseous supply piping system 2, it is necessary to measure the distribution of the ambient temperature Ta of the system, estimate the lower limit of the fluctuation range of the ambient temperature Ta of the main gaseous supply piping system 2 from the data, and supply the liquid phase in the main liquefied gas supply facility 1 The control temperature of the liquefied gas temperature To is set below the lower limit.

[副液化氣體供應設施3][Sub-liquefied gas supply facility 3]

副液化氣體供應設施3需要使自副液化氣體供應設施3及主管道系統2供應之氣態液化氣體再液化,且將其以液態液化氣體之形式暫時儲存之功能,及使先前所儲存之液化氣體再氣化且將其以氣態供應至處理裝置之功能。在此供應裝置中,此等功能可藉由使用上述熱處理裝置3來確保。The auxiliary liquefied gas supply facility 3 needs to reliquefy the gaseous liquefied gas supplied from the auxiliary liquefied gas supply facility 3 and the main piping system 2, and temporarily store it in the form of a liquid liquefied gas, and to make the previously stored liquefied gas It is regasified and supplied to the processing device in a gaseous state. In this supply device, these functions can be ensured by using the above-described heat treatment device 3.

此時,將自填充容器1a以氣態供應之液化氣體控制在(例如)10℃,亦即低於環境溫度Ta之任何部分之溫度下 持續氣化,使得其在主管道2a中將不會再液化,且因此可藉由(例如)在液化構件3a處將其冷卻至低於-5℃而使其在液化構件3a中持續液化。At this time, the liquefied gas supplied from the filling container 1a in a gaseous state is controlled at, for example, 10 ° C, that is, at a temperature lower than any portion of the ambient temperature Ta. The gasification is continued so that it will not be reliquefied in the main pipe 2a, and thus it can be continuously liquefied in the liquefaction member 3a by, for example, cooling it to below -5 °C at the liquefaction member 3a.

另一方面,在處於“再汽化模式”之汽化構件3c處,連接至處理裝置5之副管道4a與存在於汽化構件3c中所儲存之液相液化氣體上部的氣相區段以開放狀態連接,且其處於液化氣體可流出之狀態。On the other hand, at the vaporization member 3c in the "re-evaporation mode", the sub-pipe 4a connected to the treatment device 5 and the gas phase section existing in the upper portion of the liquid-phase liquefied gas stored in the vaporization member 3c are connected in an open state. And it is in a state in which the liquefied gas can flow out.

當該液化氣體在處理裝置5處消耗時,氣相區段之壓力降低,但汽化構件3c內的液相液化氣體迅速氣化而補償壓力損失。由於第三冷卻介質(例如,15℃)供應至汽化構件3c之周邊,因此汽化構件3c中之液化氣體保持在15℃,且因此將穩定在等於(例如)15℃下飽和蒸氣壓之壓力下的氣態液化氣體供應至處理裝置5。此處,連接副液化氣體供應設施3與處理裝置5之副管道4a通常係安裝於清潔室內部且管道周圍之其周圍溫度Tb為20-23℃。因此,在副管道4a內流動的具有15℃飽和溫度之液化氣體持續自管道環境獲得熱量,且因此在副管道4a中不會發生再液化。When the liquefied gas is consumed at the treatment device 5, the pressure of the gas phase section is lowered, but the liquid phase liquefied gas in the vaporization member 3c is rapidly vaporized to compensate for the pressure loss. Since the third cooling medium (for example, 15 ° C) is supplied to the periphery of the vaporization member 3c, the liquefied gas in the vaporization member 3c is maintained at 15 ° C, and thus will be stabilized at a pressure equal to, for example, a saturated vapor pressure of 15 ° C. The gaseous liquefied gas is supplied to the processing device 5. Here, the sub-pipe 4a connecting the auxiliary liquefied gas supply facility 3 and the processing apparatus 5 is usually installed inside the clean room and the ambient temperature Tb around the pipe is 20-23 °C. Therefore, the liquefied gas having a saturation temperature of 15 ° C flowing in the sub-pipe 4a continuously obtains heat from the pipe environment, and thus re-liquefaction does not occur in the sub-pipe 4a.

[副氣態供應管道系統4][Sub-gaseous supply piping system 4]

此為副液化氣體供應設施3與作為氣體消耗設施之處理裝置5之間的副管道4a,亦即副管道系統4。如同主管道2a之情況,其除具有適合液化氣體供應流動速率之管直徑外無特殊規格,且通常用於半導體液化氣體供應管道中之彼等規格將足夠。此外,在習知技術中出於防止在管道中再液化之目的所需要的諸如熱保溫及加熱裝置之構件完全 不需要。如同主管道系統2,諸如SUS之材料可用於副管道4a,且需要藉由量測副管道系統4之環境溫度Tb來控制溫度。This is the sub-pipe 4a between the auxiliary liquefied gas supply facility 3 and the treatment device 5 as a gas-consuming facility, that is, the sub-pipe system 4. As in the case of the main pipe 2a, there is no special specification other than the pipe diameter suitable for the flow rate of the liquefied gas supply, and the specifications generally used in the semiconductor liquefied gas supply pipe will be sufficient. In addition, in the prior art, components such as thermal insulation and heating devices are required for the purpose of preventing reliquefaction in the pipeline. No need. Like the main duct system 2, a material such as SUS can be used for the sub duct 4a, and it is necessary to control the temperature by measuring the ambient temperature Tb of the sub duct system 4.

[此裝置之操作方法][How to operate this device]

為有效利用上述功能,需要遵循以下製程操作此裝置。In order to effectively utilize the above functions, the following process is required to operate the device.

(1)主氣化填充於填充容器1a中之液化氣體之製程 (2)經由主管道2a主供應氣化液化氣體之製程 (3)再液化以氣態供應之液化氣體之製程 (4)儲存液態再液化液化氣體之製程 (5)副氣化液態液化氣體之製程 (6)經由副管道4a將氣化液化氣體供應至處理裝置5之製程 (7)使用製程(4)中儲存之液化氣體補充製程(5)中所用之液態液化氣體之製程(1) Process for main gasification of liquefied gas filled in the filling container 1a (2) Process for supplying gasification liquefied gas mainly through main pipe 2a (3) Process for reliquefying liquefied gas supplied in a gaseous state (4) Process for storing liquid reliquefied liquefied gas (5) Process of sub-gasification liquid liquefied gas (6) Process for supplying vaporized liquefied gas to the processing device 5 via the sub-pipe 4a (7) A process for replenishing the liquid liquefied gas used in the process (5) by using the liquefied gas stored in the process (4)

遵循此等步驟,藉由在處理裝置5附近立即強制使以氣態供應之液化氣體液化,使其再氣化,且接著將其供應至處理裝置5,可甚至在使用低蒸氣壓液化氣體時,防止在氣態供應管道(主管道2a與副管道4a)中再液化,確保填充容器1a至處理裝置5之氣態供應壓力,且穩定供應所需流動速率。Following these steps, by immediately forcing the liquefied gas supplied in the gaseous state to be liquefied in the vicinity of the processing device 5, re-gasifying it, and then supplying it to the processing device 5, even when a low vapor pressure liquefied gas is used, It is prevented from reliquefying in the gaseous supply piping (main piping 2a and secondary piping 4a), ensuring the gaseous supply pressure of the filling vessel 1a to the processing apparatus 5, and stably supplying the required flow rate.

[本發明供應裝置中之溫度控制][Temperature Control in Supply Device of the Present Invention]

如圖10中所示,本發明供應裝置之特徵在於在主液化氣體供應設施1中,將填充容器1a中之液相液化氣體溫度(主液相溫度)To設定在低於主管道系統2之周圍溫度Ta 的最低水平,且在本發明供應單元之副液化氣體供應設施3中,將液化溫度Tc或Tc及儲存溫度Ts設定在低於液相液化氣體溫度To,且將液相液化氣體溫度Tg(副液相溫度)設定在低於環境溫度Tb之最低溫度。下文中,將預定主液相溫度稱為“Tset 1”,將預定液化溫度(處於“再液化儲存模式”之儲存槽31a底部之側壁表面溫度)稱為“Tset 2”,且將副汽化溫度(處於“再汽化模式”之儲存槽31b中之液相溫度)稱為“Tset 3”As shown in FIG. 10, the supply device of the present invention is characterized in that the liquid liquefied gas temperature (main liquid phase temperature) To in the filling container 1a is set lower than that of the main piping system 2 in the main liquefied gas supply facility 1. Ambient temperature Ta The lowest level, and in the auxiliary liquefied gas supply facility 3 of the supply unit of the present invention, the liquefaction temperature Tc or Tc and the storage temperature Ts are set lower than the liquid phase liquefied gas temperature To, and the liquid phase liquefied gas temperature Tg (the vice The liquidus temperature is set to a minimum temperature lower than the ambient temperature Tb. Hereinafter, the predetermined main liquid phase temperature is referred to as "Tset 1", and the predetermined liquefaction temperature (the sidewall surface temperature at the bottom of the storage tank 31a in the "reliquefaction storage mode") is referred to as "Tset 2", and the sub-vaporization temperature is referred to. (the liquidus temperature in the storage tank 31b in the "re-evaporation mode") is called "Tset 3"

使用習知供應方法,由於尤其在使用低蒸氣壓液化氣體時之再液化及不足供應壓力(亦即,主液化氣體供應設施1至處理裝置5之差壓△P)之問題,難以經由管道供應低蒸氣壓液化氣體。另一方面,本發明之供應裝置藉由引入安裝於氣態供應管道中間的作為副液化氣體供應設施3之液化氣體中繼區段使得與處理裝置5所要求之壓力分離地設定流經主液化氣體供應設施1與副液化氣體供應設施3之間的主管道2a之液化氣體的壓力之機制成為可能。由於此配置,可藉由將在主管道2a中流動之液化氣體之飽和蒸氣溫度降至不引起管道中再液化之程度來同時消除管道中再液化之問題與亦存在於管道中壓力不足之問題。With the conventional supply method, it is difficult to supply via the pipeline due to the problem of reliquefaction and insufficient supply pressure (i.e., differential pressure ΔP of the main liquefied gas supply facility 1 to the treatment device 5) especially when using a low vapor pressure liquefied gas. Low vapor pressure liquefied gas. On the other hand, the supply device of the present invention sets the flow through the main liquefied gas separately from the pressure required by the processing device 5 by introducing a liquefied gas relay section as the auxiliary liquefied gas supply means 3 installed in the middle of the gaseous supply pipe. The mechanism of the pressure of the liquefied gas of the main pipe 2a between the supply facility 1 and the auxiliary liquefied gas supply facility 3 becomes possible. Due to this configuration, the problem of reliquefaction in the pipe and the insufficient pressure in the pipe can be eliminated by reducing the saturated vapor temperature of the liquefied gas flowing in the main pipe 2a to such a degree that it does not cause reliquefaction in the pipe. .

更特定言之,若將主液化氣體供應設施1之液相溫度(Tset 1)(例如,10℃)設定為低於主管道2a之周圍溫度Ta之任何部分(例如,15-30℃),則可防止主管道2a中之再液化。此外,在此條件下,若將副液化氣體供應設施3中用於再液化之儲存槽31a之溫度(Tset 2)設定為(例 如)0℃,且將其控制在大致±2℃內,則可獲得約20-30 kPa之氣態供應壓力,且因此有效利用本發明供應裝置之功能。此外,若將用於再汽化之儲存槽31b中之液相溫度(Tset 3)設定為(例如)15℃,亦即高於用於再液化之Tset 2之溫度且同時始終低於處理裝置5中氣態供應管道之任何部分之周圍溫度Tb(例如,20-25℃),且將其控制在±2℃內,則可確定地供應處理裝置5所必需之大致30-100 kPa之壓力。More specifically, if the liquidus temperature (Tset 1) (for example, 10 ° C) of the main liquefied gas supply facility 1 is set to be lower than any portion of the ambient temperature Ta of the main pipe 2a (for example, 15 to 30 ° C), Then, reliquefaction in the main pipe 2a can be prevented. Further, under this condition, the temperature (Tset 2) of the storage tank 31a for reliquefaction in the auxiliary liquefied gas supply facility 3 is set to (example) For example, 0 ° C, and controlling it within approximately ± 2 ° C, a gaseous supply pressure of about 20-30 kPa can be obtained, and thus the function of the supply device of the present invention is effectively utilized. Further, if the liquidus temperature (Tset 3) in the storage tank 31b for re-vaporization is set to, for example, 15 ° C, that is, higher than the temperature of the Tset 2 for reliquefaction and at the same time always lower than the processing apparatus 5 The ambient temperature Tb (e.g., 20-25 ° C) of any portion of the medium gas supply conduit, and controlled within ± 2 ° C, can positively supply the pressure of approximately 30-100 kPa necessary for the processing device 5.

亦即,如圖10中所示,在此溫度控制系統中,藉由將主液相溫度To維持在至少3℃或5℃之溫度,甚至考慮低於環境溫度(主管道系統2之周圍溫度Ta)之控制範圍來執行汽化。藉此,主管道2a中管道壁表面處之熱流保持在自管道外部周圍環境朝向管道內氣化液化氣體之方向。此意謂在汽化溫度下處於飽和蒸氣狀態下之液化氣體將在整個流經管道的過程中持續自管道外部獲得熱量且轉移至過熱蒸氣程度,且因此將不會發生如習知方法中之中繼管道中之液化氣體再液化。That is, as shown in FIG. 10, in this temperature control system, by maintaining the main liquidus temperature To at a temperature of at least 3 ° C or 5 ° C, even lower than the ambient temperature (the ambient temperature of the main piping system 2) The control range of Ta) is to perform vaporization. Thereby, the heat flow at the surface of the pipe wall in the main pipe 2a is maintained in the direction from the surrounding environment outside the pipe toward the gasification liquefied gas in the pipe. This means that the liquefied gas in a saturated vapor state at the vaporization temperature will continue to obtain heat from the outside of the pipe and transfer to the degree of superheated vapor throughout the flow through the pipe, and thus will not occur as in the conventional method. The liquefied gas in the pipeline is reliquefied.

此外,當將主液化氣體供應設施1置放於與安置處理裝置5之清潔室30不同之室10中時,若假定(例如)15℃為主管道2a周圍溫度之最低溫度,則將係足夠的,因為主管道2a僅在製程建築物內穿行。在此情況下,若將主液化氣體供應設施1中填充容器1a內之液相溫度設定且精確控制在充分低於15℃之溫度,或大致10℃±2℃,則可實現上述目標。Further, when the main liquefied gas supply facility 1 is placed in the chamber 10 different from the clean room 30 in which the treatment device 5 is disposed, if it is assumed that, for example, 15 ° C is the lowest temperature of the temperature around the main pipe 2a, it will be sufficient. Because the main pipe 2a only passes through the process building. In this case, if the liquidus temperature in the filling container 1a in the main liquefied gas supply facility 1 is set and precisely controlled to a temperature sufficiently lower than 15 ° C, or approximately 10 ° C ± 2 ° C, the above object can be achieved.

此外,在本發明之供應裝置中,關於起始供應液化氣體較佳遵循1.1-1.3中所列之操作。Further, in the supply device of the present invention, it is preferred to follow the operation listed in 1.1-1.3 with respect to the initial supply of the liquefied gas.

1.1在起始供應液化氣體之前藉由用冷卻源冷卻填充容器,將液相液化氣體溫度降至低於標準控制溫度,且低於主管道系統之最低溫度及周圍溫度。1.1 The liquid liquefied gas temperature is lowered to below the standard control temperature by cooling the packed vessel with a cooling source prior to initial supply of the liquefied gas, and below the minimum temperature of the main piping system and the ambient temperature.

1.2自填充容器開始供應氣態液化氣體。1.2 Supply of gaseous liquefied gas from the filling container.

1.3藉由用熱源加熱將因氣態供應而進一步經冷卻之液相液化氣體控制在標準控制溫度。1.3 The liquid liquefied gas which is further cooled by the supply of the gas is controlled at a standard control temperature by heating with a heat source.

亦即,藉由遵循此等步驟,藉由在起始供應液化氣體之前首先用冷卻源將填充容器冷卻至低於標準控制溫度且低於主管道系統之最低溫度及環境溫度之溫度,可甚至在主管道系統之最低溫度低於周圍溫度時亦確定地防止供應管道中之再液化,且由於隨後溫度升高及適當的溫度控制而確保氣態供應壓力。That is, by following these steps, even by initially cooling the filling vessel to a temperature below the standard control temperature and below the minimum temperature of the main piping system and the ambient temperature before initially supplying the liquefied gas, The reliquefaction in the supply line is also surely prevented when the lowest temperature of the main piping system is lower than the ambient temperature, and the gaseous supply pressure is ensured due to subsequent temperature rise and proper temperature control.

[本發明之液化氣體供應設施之其他配置實施例][Other Configuration Examples of Liquefied Gas Supply Facility of the Present Invention]

上述配置實施例說明一個主液化氣體供應設施連接至一個副液化氣體供應設施之情況;然而,本發明藉由將一個以上副液化氣體供應設施連接至一個主液化氣體供應設施而使構建由具有分枝之主管道組成且能夠同時自主液化氣體供應設施向數個副液化氣體供應設施供應液化氣體之液化氣體供應設施(下文稱為“裝置2”)成為可能。The above configuration embodiment illustrates a case where a main liquefied gas supply facility is connected to a secondary liquefied gas supply facility; however, the present invention is constructed by connecting one or more auxiliary liquefied gas supply facilities to a main liquefied gas supply facility. A liquefied gas supply facility (hereinafter referred to as "device 2") which is composed of a main pipe and can simultaneously supply a liquefied gas to a plurality of auxiliary liquefied gas supply facilities by an autonomous liquefied gas supply facility is possible.

如圖11中所說明,裝置2為連接至一個主液化氣體供應設施之三個副液化氣體供應設施3x、3y及3z之一具體實例。在此具體實例中,副液化氣體供應設施3x、3y及3z 可置放於具有一致通風溫度之同一清潔室之區域中,或其可置放於具有不同通風溫度之不同清潔室30x、30y及30z之區域中。As illustrated in Fig. 11, the apparatus 2 is a specific example of three auxiliary liquefied gas supply facilities 3x, 3y and 3z connected to one main liquefied gas supply facility. In this specific example, the auxiliary liquefied gas supply facilities 3x, 3y and 3z It can be placed in the area of the same clean room with a uniform ventilation temperature, or it can be placed in the area of different clean rooms 30x, 30y and 30z with different ventilation temperatures.

如上文所說明,亦在裝置2中,副液化氣體供應設施3x、3y及3z中之氣態供應壓力可獨立於主液化氣體供應設施之氣態供應壓力來設定。亦即,在裝置2內,主液化氣體供應設施1、主管道2a、副液化氣體供應設施3x、3y及3z、及副管道系統4x、4y及4z均係獨立的,且因此主管道系統2可具備分枝,且可藉由在各種條件下操作副液化氣體供應設施3x、3y及3z來供應來自主液化氣體供應設施1之液化氣體。舉例而言,可將具有經控制副氣態供應壓力之各種液化氣體供應至處理裝置5x、5y及5z。此外,亦可在各種條件下將副氣流供應至處理裝置5x、5y及5z。As explained above, also in the apparatus 2, the gaseous supply pressure in the auxiliary liquefied gas supply facilities 3x, 3y and 3z can be set independently of the gaseous supply pressure of the main liquefied gas supply facility. That is, in the apparatus 2, the main liquefied gas supply facility 1, the main duct 2a, the auxiliary liquefied gas supply facilities 3x, 3y and 3z, and the auxiliary duct systems 4x, 4y and 4z are independent, and thus the main duct system 2 Branches may be provided, and the liquefied gas from the main liquefied gas supply facility 1 may be supplied by operating the auxiliary liquefied gas supply facilities 3x, 3y, and 3z under various conditions. For example, various liquefied gases having a controlled secondary gaseous supply pressure may be supplied to the processing devices 5x, 5y, and 5z. Further, the secondary airflow may be supplied to the processing devices 5x, 5y, and 5z under various conditions.

[潛在工業應用][potential industrial application]

已大體描述用於向半導體製造或FDP製造中所用之半導體之特殊材料氣體之熱處理裝置及使用此熱處理裝置之液化氣體供應裝置;然而,本發明不限於用於該等電子器件之液化氣體且可應用於各種製程或各種液體熱處理製程所用之液化氣體。此外,其可用為一種假使當需要多種溫度條件下只供應具有相同溫度的冷卻介質裝置或可用於特別是在多種溫度條件下,需要熱處理之製造製程。例如,其適用於在諸如氣體吸收或純化的製程中之冷卻及加熱間的轉換之處理製程。A heat treatment apparatus for a special material gas for semiconductors used in semiconductor manufacturing or FDP fabrication and a liquefied gas supply apparatus using the same have been generally described; however, the present invention is not limited to liquefied gases for such electronic devices and may be It is used in liquefied gases used in various processes or various liquid heat treatment processes. Further, it can be used as a manufacturing process which requires heat treatment only when a plurality of temperature conditions are required to supply only a cooling medium device having the same temperature or can be used, particularly under various temperature conditions. For example, it is suitable for a treatment process for switching between cooling and heating in a process such as gas absorption or purification.

1‧‧‧主液化氣體供應設施1‧‧‧Main liquefied gas supply facility

1a‧‧‧填充容器1a‧‧‧filled container

1b‧‧‧主汽化構件1b‧‧‧Main vaporization components

1c‧‧‧冷卻區段1c‧‧‧cooling section

1d‧‧‧加熱區段1d‧‧‧heating section

1e‧‧‧冷卻介質單元1e‧‧‧Cooling unit

1f‧‧‧荷重計1f‧‧‧ load meter

1z‧‧‧外殼1z‧‧‧shell

2‧‧‧主管道系統2‧‧‧Main piping system

2a‧‧‧主管道2a‧‧‧Main pipeline

3‧‧‧熱處理裝置(副液化氣體供應設施)3‧‧‧ Heat treatment unit (sub-liquefied gas supply facility)

3a‧‧‧液化構件3a‧‧‧liquefaction components

3aa‧‧‧冷卻介質引入管3aa‧‧‧Cooling medium introduction tube

3aA‧‧‧液化構件3aA‧‧‧liquefaction components

3ab‧‧‧冷卻介質排出管3ab‧‧‧Cooling medium discharge pipe

3aB‧‧‧液化構件3aB‧‧‧Liquidized components

3ae‧‧‧保溫覆蓋物3ae‧‧‧Insulation cover

3b‧‧‧儲存構件3b‧‧‧Storage components

3bA‧‧‧儲存構件3bA‧‧‧ storage components

3ba‧‧‧容器3ba‧‧‧ Container

3bb‧‧‧冷卻夾套3bb‧‧‧cooling jacket

3bB‧‧‧儲存構件3bB‧‧‧ storage components

3bc‧‧‧冷卻介質引入口3bc‧‧‧ Cooling medium inlet

3bd‧‧‧冷卻介質排出口3bd‧‧‧Cooling medium discharge

3be‧‧‧保溫覆蓋物3be‧‧‧Insulation cover

3c‧‧‧副汽化構件3c‧‧‧Sub-vaporization components

3ca‧‧‧容器3ca‧‧‧container

3cA‧‧‧汽化構件3cA‧‧‧vaporization components

3cb‧‧‧冷卻夾套3cb‧‧‧cooling jacket

3cB‧‧‧汽化構件3cB‧‧‧vaporization components

3cc‧‧‧載氣引入區段3cc‧‧‧carrier gas introduction section

3cd‧‧‧載氣引入管3cd‧‧‧carrier gas introduction tube

3ce‧‧‧空間3ce‧‧‧ space

3cf‧‧‧噴嘴3cf‧‧‧ nozzle

3d‧‧‧連通部件3d‧‧‧Connecting parts

3e‧‧‧液化氣體引入管3e‧‧‧liquefied gas introduction pipe

3eA‧‧‧液化氣體引入管3eA‧‧‧liquefied gas introduction pipe

3f‧‧‧液化氣體排出管3f‧‧‧liquefied gas discharge pipe

3fA‧‧‧液化氣體排出管3fA‧‧‧liquefied gas discharge pipe

3fB‧‧‧液化氣體排出管3fB‧‧‧liquefied gas discharge pipe

3mf‧‧‧質流控制器3mf‧‧‧Flow Controller

3u‧‧‧熱處理單元(液化供應裝置)3u‧‧‧heat treatment unit (liquefaction supply unit)

3uA‧‧‧熱處理單元3uA‧‧‧heat treatment unit

3uB‧‧‧熱處理單元3uB‧‧‧heat treatment unit

3x‧‧‧副液化氣體供應設施3x‧‧‧Sub-liquefied gas supply facility

3y‧‧‧副液化氣體供應設施3y‧‧‧Sub-liquefied gas supply facility

3z‧‧‧副液化氣體供應設施3z‧‧‧Sub-liquefied gas supply facility

4‧‧‧副管道系統4‧‧‧Subpipe system

4a‧‧‧副管道4a‧‧‧Sub-pipe

4x‧‧‧副管道系統4x‧‧‧Sub piping system

4y‧‧‧副管道系統4y‧‧‧Subpipe system

4z‧‧‧副管道系統4z‧‧‧Sub piping system

5‧‧‧處理裝置5‧‧‧Processing device

5x‧‧‧處理裝置5x‧‧‧Processing device

5y‧‧‧處理裝置5y‧‧‧Processing device

5z‧‧‧處理裝置5z‧‧‧Processing device

6‧‧‧廢氣處理裝置6‧‧‧Exhaust gas treatment device

7‧‧‧冷卻介質產生單元7‧‧‧Cooling medium generating unit

7a‧‧‧第一冷卻介質桶7a‧‧‧First cooling medium bucket

7b‧‧‧第二冷卻介質桶7b‧‧‧Second cooling medium tank

7c‧‧‧第三冷卻介質桶7c‧‧‧ third cooling medium barrel

10‧‧‧液化氣體供應室10‧‧‧Liquified gas supply room

30‧‧‧清潔室30‧‧‧Clean room

30a‧‧‧清潔室底板30a‧‧‧Clean floor

30b‧‧‧充氣底板30b‧‧‧Inflatable bottom plate

30x‧‧‧清潔室30x‧‧ clean room

30y‧‧‧清潔室30y‧‧‧Clean room

30z‧‧‧清潔室30z‧‧ clean room

31a‧‧‧儲存槽31a‧‧‧ Storage tank

31b‧‧‧儲存槽31b‧‧‧ storage tank

32‧‧‧荷重計32‧‧‧ load meter

33a‧‧‧換向閥33a‧‧‧Reversing valve

33b‧‧‧換向閥33b‧‧‧Reversing valve

33c‧‧‧換向閥33c‧‧‧Reversing valve

33d‧‧‧換向閥33d‧‧‧Reversing valve

34A‧‧‧壓力感測器34A‧‧‧pressure sensor

34B‧‧‧壓力感測器34B‧‧‧pressure sensor

71‧‧‧冷凍機71‧‧‧Freezer

71a‧‧‧壓縮機71a‧‧‧Compressor

71b‧‧‧冷凝器71b‧‧‧Condenser

71c‧‧‧接收器71c‧‧‧ Receiver

71d‧‧‧膨脹閥71d‧‧‧Expansion valve

71e‧‧‧蒸發器71e‧‧‧Evaporator

72‧‧‧流徑72‧‧‧ flow path

73‧‧‧冷卻介質槽73‧‧‧Cooling medium tank

74b‧‧‧冷卻介質溫度控制區段74b‧‧‧Cooling medium temperature control section

74c‧‧‧冷卻介質溫度控制區段74c‧‧‧Cooling medium temperature control section

102‧‧‧儲存容器102‧‧‧ storage container

104‧‧‧冷凝槽104‧‧‧Condensation tank

106‧‧‧冷凍機106‧‧‧Freezer

108‧‧‧容器本體108‧‧‧ container body

110‧‧‧液相部件110‧‧‧liquid components

112‧‧‧氣相部件112‧‧‧ gas phase parts

114‧‧‧感測器114‧‧‧Sensor

116‧‧‧冷凝槽本體116‧‧‧Condensation tank body

118‧‧‧液相部件118‧‧‧liquid components

120‧‧‧氣相部件120‧‧‧ gas phase parts

122‧‧‧輸送管道122‧‧‧Transportation pipeline

124‧‧‧輸送管道124‧‧‧Transportation pipeline

126‧‧‧遮蔽箱126‧‧ ‧ shadow box

138‧‧‧再冷凝裝置138‧‧‧Recondensing device

140‧‧‧冷凍機本體140‧‧‧Freezer body

144‧‧‧輸送管道144‧‧‧Transportation pipeline

146‧‧‧壓縮機146‧‧‧Compressor

201‧‧‧質流控制器201‧‧‧Quality Flow Controller

202‧‧‧溫度感測器202‧‧‧temperature sensor

203‧‧‧溫度控制電路203‧‧‧ Temperature Control Circuit

204‧‧‧加熱器204‧‧‧heater

205‧‧‧液化材料氣體供應管道205‧‧‧Liquid material gas supply pipeline

206‧‧‧製程腔室206‧‧‧Processing chamber

207‧‧‧液化材料氣體儲存缸207‧‧‧Liquid material gas storage tank

Fa‧‧‧箭頭Fa‧‧ arrow

Fb‧‧‧箭頭Fb‧‧ arrow

Hb‧‧‧加熱器Hb‧‧‧heater

Hc‧‧‧加熱器Hc‧‧ heater

Hn‧‧‧加熱器Hn‧‧‧heater

Ma‧‧‧攪拌器Ma‧‧‧Agitator

Mb‧‧‧攪拌器Mb‧‧‧ blender

Mc‧‧‧攪拌器Mc‧‧‧Agitator

Wa‧‧‧隔牆Wa‧‧‧ partition wall

Wb‧‧‧隔牆Wb‧‧‧ partition wall

Pa‧‧‧循環泵Pa‧‧ Circulating pump

Pb‧‧‧循環泵Pb‧‧ Circulating pump

Pc‧‧‧循環泵Pc‧‧ Circulating pump

Sb‧‧‧溫度感測器Sb‧‧‧Temperature Sensor

Sc‧‧‧溫度感測器Sc‧‧‧Temperature Sensor

Ta‧‧‧環境溫度Ta‧‧‧ ambient temperature

Tb‧‧‧環境溫度Tb‧‧‧ ambient temperature

Tc‧‧‧液化溫度Tc‧‧‧Liquidization temperature

Tg‧‧‧液相液化氣體溫度Tg‧‧‧ liquid liquefied gas temperature

To‧‧‧液相液化氣體溫度To‧‧‧ liquid liquefied gas temperature

Tset1‧‧‧預定主液相溫度Tset1‧‧‧predetermined main liquidus temperature

Tset2‧‧‧預定液化溫度Tset2‧‧‧Predetermined liquefaction temperature

Tset3‧‧‧副汽化溫度Tset3‧‧‧Sub-vaporization temperature

V1‧‧‧流徑換向閥V1‧‧‧ flow path reversing valve

V2‧‧‧流徑換向閥V2‧‧‧ flow path reversing valve

V3‧‧‧流徑換向閥V3‧‧‧ flow path reversing valve

V4‧‧‧流徑換向閥V4‧‧‧ flow path reversing valve

圖1為說明本發明熱處理裝置(本發明裝置)之基本配置實施例之圖示。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a basic configuration example of a heat treatment apparatus (invention apparatus of the present invention) of the present invention.

圖2為說明本發明裝置之冷卻介質產生單元之說明圖。Fig. 2 is an explanatory view showing a cooling medium generating unit of the apparatus of the present invention.

圖3為說明構成本發明裝置之冷卻介質產生單元之冷卻介質桶之溫度分布的說明圖。Fig. 3 is an explanatory view showing a temperature distribution of a cooling medium tank constituting a cooling medium generating unit of the apparatus of the present invention.

圖4為說明構成本發明裝置之冷卻介質產生單元之冷卻介質桶之結構的說明圖。Fig. 4 is an explanatory view showing the structure of a cooling medium tank constituting a cooling medium generating unit of the apparatus of the present invention.

圖5為說明構成本發明裝置之熱處理單元之液化構件之結構的說明圖。Fig. 5 is an explanatory view showing the structure of a liquefaction member constituting a heat treatment unit of the apparatus of the present invention.

圖6為說明構成本發明裝置之熱處理單元之液化構件之其他配置實施例的說明圖。Fig. 6 is an explanatory view showing another configuration example of a liquefaction member constituting a heat treatment unit of the apparatus of the present invention.

圖7為說明本發明裝置之其他配置實施例之說明圖。Fig. 7 is an explanatory view showing another configuration example of the apparatus of the present invention.

圖8為說明本發明液化氣體供應設施(本發明供應裝置)之基本配置實施例之說明圖。Fig. 8 is an explanatory view showing a basic configuration example of a liquefied gas supply facility (supplying device of the present invention) of the present invention.

圖9為說明本發明供應裝置之主液化氣體供應設施之說明圖。Fig. 9 is an explanatory view showing a main liquefied gas supply facility of the supply device of the present invention.

圖10為說明本發明供應裝置之溫度設定之說明圖。Fig. 10 is an explanatory view for explaining the temperature setting of the supply device of the present invention.

圖11為說明本發明供應裝置之其他配置實施例之說明圖。Fig. 11 is an explanatory view showing another configuration example of the supply device of the present invention.

圖12為說明氣體供應設施未來發展之圖示。Figure 12 is a graphical representation of the future development of a gas supply facility.

圖13為說明冷卻構件未來發展之圖示。Figure 13 is a diagram illustrating the future development of a cooling member.

3a‧‧‧液化構件3a‧‧‧liquefaction components

3b‧‧‧儲存構件3b‧‧‧Storage components

3c‧‧‧副汽化構件3c‧‧‧Sub-vaporization components

3d‧‧‧連通部件3d‧‧‧Connecting parts

3u‧‧‧熱處理單元(液化供應裝置)3u‧‧‧heat treatment unit (liquefaction supply unit)

7‧‧‧冷卻介質產生單元7‧‧‧Cooling medium generating unit

7a‧‧‧第一冷卻介質桶7a‧‧‧First cooling medium bucket

7b‧‧‧第二冷卻介質桶7b‧‧‧Second cooling medium tank

7c‧‧‧第三冷卻介質桶7c‧‧‧ third cooling medium barrel

71‧‧‧冷凍機71‧‧‧Freezer

72‧‧‧流徑72‧‧‧ flow path

73‧‧‧冷卻介質槽73‧‧‧Cooling medium tank

74b‧‧‧冷卻介質溫度控制區段74b‧‧‧Cooling medium temperature control section

Hb‧‧‧加熱器Hb‧‧‧heater

Hc‧‧‧加熱器Hc‧‧ heater

Pa‧‧‧循環泵Pa‧‧ Circulating pump

Pb‧‧‧循環泵Pb‧‧ Circulating pump

Pc‧‧‧循環泵Pc‧‧ Circulating pump

Claims (8)

一種熱處理裝置,其特徵在於使用單一冷凍機系統在多個冷卻介質桶中分別產生具有不同溫度之多種冷卻介質,每一個冷卻介質桶具有由一或二個冷卻介質共享的隔牆,使用該等冷卻介質在多個熱處理區段進行冷卻處理或加熱處理,且同時控制待用作上述熱處理區段熱處理之參考冷卻源的該等冷卻介質中至少一者之溫度,其中第一冷卻介質藉由冷凍機冷卻至該冷卻介質間之最低溫度,其餘冷卻介質分別經由該共享的隔牆由相鄰的冷卻介質冷卻。 A heat treatment apparatus characterized in that a plurality of cooling mediums having different temperatures are respectively generated in a plurality of cooling medium tanks using a single refrigerator system, each of the cooling medium barrels having a partition wall shared by one or two cooling mediums, using the partition walls Cooling medium is subjected to cooling treatment or heat treatment in a plurality of heat treatment sections, and simultaneously controls temperature of at least one of the cooling medium to be used as a reference cooling source for heat treatment of the heat treatment section, wherein the first cooling medium is frozen The machine is cooled to a minimum temperature between the cooling medium, and the remaining cooling medium is cooled by the adjacent cooling medium via the shared partition wall, respectively. 如申請專利範圍第1項之熱處理裝置,其特徵在於在最內的第一冷卻介質桶中儲存最低溫度第一冷卻介質,在其周圍以使得第二低溫第二冷卻介質儲存於第二冷卻介質桶中、第三低溫冷卻介質儲存於第三冷卻介質桶中、且第n低溫冷卻介質係儲存於第n個冷卻介質桶中之方式而以自低溫至高溫之順序儲存該等冷卻介質,其中n為大於3的整數,且同時自該等冷卻介質桶向該等熱處理區段供應該等冷卻介質。 The heat treatment apparatus of claim 1, characterized in that the lowest temperature first cooling medium is stored in the innermost first cooling medium tank, and the second low temperature second cooling medium is stored in the second cooling medium The third low temperature cooling medium is stored in the third cooling medium tank, and the nth low temperature cooling medium is stored in the nth cooling medium tank to store the cooling medium in order from low temperature to high temperature. n is an integer greater than 3, and the cooling medium is supplied to the heat treatment sections simultaneously from the cooling medium barrels. 如申請專利範圍第1或2項之熱處理裝置,其特徵在於具有至少兩個當作液化構件、儲存構件及汽化構件之熱處理區段,及允許在此等構件之間獨立地及交替地轉換之功能,使用上述第一冷卻介質作為用於液化構件之熱處理區段之冷卻源,使用上述第二冷卻介質作為用於儲存構件之熱處理區段之冷卻源,且同時使用上述第三冷卻介質作為用於汽化構件之熱處理區段之加熱源。 A heat treatment apparatus according to claim 1 or 2, characterized in that it has at least two heat treatment sections as liquefaction members, storage members and vaporization members, and allows independent and alternate conversion between the members. a function of using the first cooling medium as a cooling source for the heat treatment section of the liquefaction member, using the second cooling medium as a cooling source for the heat treatment section of the storage member, and simultaneously using the third cooling medium as described above a heating source for the heat treatment section of the vaporization member. 如申請專利範圍第1或2項之熱處理裝置,其特徵在於當自其作為上述液化構件或儲存構件之功能轉換至其作為汽化構件之功能時,預先轉換上述第一至第三冷卻介質之供應路徑或預先轉換至當其處於轉換後可確保該等功能中任一者之狀態時各功能之控制溫度。 A heat treatment apparatus according to claim 1 or 2, characterized in that the supply of the first to third cooling mediums is previously converted when it is switched from its function as the liquefaction member or the storage member to its function as a vaporization member The path or pre-conversion to the control temperature of each function when it is in the state of ensuring any of these functions after the transition. 如申請專利範圍第1或2項之熱處理裝置,其特徵在於使用來自上述冷凍機之熱輻射區段之熱量作為對上述溫度受控冷卻介質之該溫度控制的加熱源。 A heat treatment apparatus according to claim 1 or 2, characterized in that the heat from the heat radiation section of the refrigerator is used as the temperature control heating source for the temperature controlled cooling medium. 如申請專利範圍第1或2項之熱處理裝置,其特徵在於上述汽化構件具有上述第三冷卻介質可以接觸儲存待氣化目標氣體之容器外圓周及底部之方式流過的空間且同時具有在上述空間之底面將上述第三冷卻介質垂直噴射至該容器底部之噴嘴。 The heat treatment apparatus according to claim 1 or 2, wherein the vaporization member has a space through which the third cooling medium can contact the outer circumference and the bottom of the container for storing the target gas to be vaporized, and has the above-mentioned The bottom surface of the space sprays the third cooling medium vertically to the nozzle at the bottom of the container. 一種液化氣體供應裝置,其將液化氣體自填充有該液化氣體之容器經由一管道系統以氣態供應至一分離的氣體消耗設施,其特徵在於使用如申請專利範圍第1-6項中任一項之熱處理裝置中之任一者對經由上述管道供應之該氣態液化氣體執行液化處理及汽化處理,或液化處理、儲存處理及汽化處理。 A liquefied gas supply device for supplying a liquefied gas from a container filled with the liquefied gas in a gaseous state to a separate gas consuming facility via a piping system, characterized by using any one of claims 1-6 Any one of the heat treatment apparatuses performs liquefaction treatment and vaporization treatment, or liquefaction treatment, storage treatment, and vaporization treatment on the gaseous liquefied gas supplied through the pipeline. 如申請專利範圍第7項之液化氣體供應裝置,其特徵在於具有上述熱處理裝置中之至少兩者,使用在該等熱處理裝置處產生之不同溫度之多種冷卻介質,在第一熱處理裝置處使用最低溫度冷卻介質對上述氣 態液化氣體實施液化處理,或進一步使用第二低溫冷卻介質對該液態液化氣體實施儲存處理,在另一熱處理裝置處使用溫度比前兩種冷卻介質高之冷卻介質對上述經儲存處理之液化氣體實施汽化處理,其使得能夠在上述液化及儲存處理與汽化處理之間轉換,且在該轉換的同時,具有自動在供應至上述第一熱處理裝置之冷卻介質與供應至上述另一熱處理裝置之冷卻介質之間轉換的冷卻介質流徑轉換系統。The liquefied gas supply device of claim 7, characterized in that at least two of the above heat treatment devices are used, and a plurality of cooling media at different temperatures generated at the heat treatment devices are used, and the first heat treatment device has the lowest use. Temperature cooling medium to the above gas The liquefied gas is subjected to liquefaction treatment, or the liquid liquefied gas is further subjected to storage treatment using a second low-temperature cooling medium, and the liquefied gas having the higher temperature than the former two kinds of cooling medium is used at the other heat treatment device. Performing a vaporization process that enables switching between the liquefaction and storage process and the vaporization process described above, and at the same time as the conversion, has cooling that is automatically supplied to the first heat treatment device and to the other heat treatment device A cooling medium flow path conversion system that converts between media.
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