TWI497717B - High source to drain breakdown voltage vertical field effect transistors - Google Patents

High source to drain breakdown voltage vertical field effect transistors Download PDF

Info

Publication number
TWI497717B
TWI497717B TW099115603A TW99115603A TWI497717B TW I497717 B TWI497717 B TW I497717B TW 099115603 A TW099115603 A TW 099115603A TW 99115603 A TW99115603 A TW 99115603A TW I497717 B TWI497717 B TW I497717B
Authority
TW
Taiwan
Prior art keywords
type body
field effect
body
breakdown voltage
source
Prior art date
Application number
TW099115603A
Other languages
Chinese (zh)
Other versions
TW201143089A (en
Inventor
Chao Cheng Lu
Original Assignee
Chao Cheng Lu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chao Cheng Lu filed Critical Chao Cheng Lu
Priority to TW099115603A priority Critical patent/TWI497717B/en
Publication of TW201143089A publication Critical patent/TW201143089A/en
Application granted granted Critical
Publication of TWI497717B publication Critical patent/TWI497717B/en

Links

Description

High field drain breakdown voltage vertical field effect transistor

The invention is a vertical field effect transistor with high source-drain breakdown voltage, comprising N+, N-, P, N- and drain N+ from the source, and N+, N- and P-type bodies of the source thereof. The body Diode, and the N+, N-, and P-type bodies from the source also form an integral diode, that is, form a back-to-back connection diode, which has a bidirectional high breakdown voltage value vertical. Field effect transistor.

FIG. 1 is a structural diagram of a conventional first power metal oxide semiconductor field effect transistor (Power MOSFET). As can be seen from the figure, the N+ of the source S is connected with the P type body to form a first 1 Body Diode (BD1), which is viewed from the drain D, has a Drain-Source Breakdown Voltage (BVds) high; and since the source S, its source-drain breakdown voltage The Source-Drain Breakdown Voltage (BVsd) has only a PN combined with a voltage drop and a low voltage drop.

2 is a structural diagram of a conventional second power metal oxide semiconductor field effect transistor (Power MOSFET). It can be seen from the figure that it is N+ type from the source S of N+, P, N- to the drain D. The breakdown voltage of the drain D to the source S is a breakdown voltage value of the second body diode BD2 and the third body diode BD3, wherein the breakdown voltage of the third body diode BD3 is high, and The second body diode BD2 is a forward voltage drop value, and the source-drain breakdown voltage value BVsd is the breakdown voltage value of the second body diode BD2 and the third body diode BD3 from the source S. The forward voltage value is known from the N+N-binding theory, and the breakdown voltage value of the N+P combined diode of the second body diode BD2 is absolutely smaller than the collapse voltage value of the N+N-P combination of the present invention.

In order to provide the need for bidirectional switching or synchronous rectification (Synchronous Rectifier): In the present invention, an N-type body is added between the source N+ and the P-type body to obtain a high source-drain breakdown voltage value.

The invention can obtain a bidirectional switching characteristic in which the source drain breakdown voltage value is equal to the drain source breakdown voltage value.

The present invention can also arbitrarily set the source-drain breakdown voltage value and the drain-source breakdown voltage value according to the requirements of the synchronous rectification function.

FIG. 3 is a structural diagram of an N-channel metal oxide semiconductor field effect transistor (N-channel MOSFET) according to the present invention. As can be seen from the figure, the source S and the N+ body are connected together, and the N+ type and the N-type are connected. The body is combined, the N-type body is combined with the P-type body to form a N+ N-P-bonded Fourth Body Diode (BD4); the drain D is connected with the N+ type body, N+ type The body is combined with the N-type body, and the N-type body is combined with the P-type body to form a N+ N-P-bonded fifth body diode (BD5); as shown in Fig. 3, the fourth The P-type body of the body diode BD4 and the P-type body of the 5th body diode BD5 are a common body, which are viewed from the source drain or drain source of FIG. 3, which are back-to-back body diodes; The Doping Concentrations of N- are determined by the demand of the breakdown voltage value, and are not self-limiting.

FIG. 4 is a structural diagram of a P-channel metal oxide semiconductor field effect transistor (P-Channel MOSFET) according to the present invention. As can be seen from the figure, the source S and the P+ body are connected together, and the P+ type and the P-type are connected. When the bodies are combined, the P-type body is combined with the N-type body to form a P+ P-N combined sixth body Diode (BD6); the drain D is connected with the P+ type body, P+ type The body is combined with the P-type body, and the P-type body is combined with the N-type body to form a P+ P-N combined seventh body diode (Seventh Body) Diode, BD7); It can be seen from Fig. 4 that the N-type body of the sixth body diode BD6 and the N type body of the seventh body diode BD7 are a common body, which is viewed from the source drain or drain source of FIG. It is a face-to-face body diode; its Doping Concentrations of P+ and P- depend on the demand of the breakdown voltage value, and are not self-limiting.

S‧‧‧ source

D‧‧‧Drain

G‧‧‧ gate

N+‧‧‧ heavily doped N-type body

N-‧‧‧Lightly doped N-type body

N‧‧‧N body

P+‧‧‧ heavily doped P type body

P-‧‧‧Lightly doped P-type body

P‧‧‧P body

BD1, BD2, BD3, BD4, BD5, BD6, BD7‧‧‧1st, 2nd, 3rd, 4th, 5th, 6th, 7th body diodes

1 is a structural diagram of a conventional first power metal oxide semiconductor field effect transistor.

2 is a structural diagram of a conventional second power metal oxide semiconductor field effect transistor.

3 is a structural diagram of an N-channel metal oxide semiconductor field effect transistor of the present invention.

4 is a structural diagram of a P-channel metal oxide semiconductor field effect transistor of the present invention.

N+‧‧‧Heady doping N type material

N-‧‧‧Light doping N type material

P‧‧‧P body

S‧‧‧ source

G‧‧‧ gate

D‧‧‧Drain

BD4‧‧‧4th body diode

BD5‧‧‧5th body diode

Claims (4)

  1. A vertical field effect transistor with high source-drain breakdown voltage, characterized in that it comprises: a heavily doped N-type body connected to a source; a lightly doped N-type body combined with a heavily doped N-type body; A P-type body is combined with the lightly doped N-type body; the above-mentioned one heavily doped N-type body, one lightly doped N-type body and one P-type body are sequentially combined to form an integrated diode.
  2. A vertical field effect transistor according to the high source-drain breakdown voltage of claim 1 is characterized in that the vertical field effect transistor is an N-channel metal oxide semiconductor field effect transistor.
  3. A vertical field effect transistor with high source-drain breakdown voltage, characterized in that it comprises: a heavily doped P-type body connected to a source; a lightly doped P-type body combined with a heavily doped P-type body; An N-type body is combined with the lightly doped P type body; the above-mentioned one heavily doped P type body, one lightly doped P type body and one N type body are sequentially combined to form an integral diode.
  4. The vertical field effect transistor of the high source-drain breakdown voltage of claim 3 is characterized in that the vertical field effect transistor is a P-channel metal oxide semiconductor field effect transistor.
TW099115603A 2010-05-17 2010-05-17 High source to drain breakdown voltage vertical field effect transistors TWI497717B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099115603A TWI497717B (en) 2010-05-17 2010-05-17 High source to drain breakdown voltage vertical field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099115603A TWI497717B (en) 2010-05-17 2010-05-17 High source to drain breakdown voltage vertical field effect transistors

Publications (2)

Publication Number Publication Date
TW201143089A TW201143089A (en) 2011-12-01
TWI497717B true TWI497717B (en) 2015-08-21

Family

ID=46765206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099115603A TWI497717B (en) 2010-05-17 2010-05-17 High source to drain breakdown voltage vertical field effect transistors

Country Status (1)

Country Link
TW (1) TWI497717B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298781A (en) * 1987-10-08 1994-03-29 Siliconix Incorporated Vertical current flow field effect transistor with thick insulator over non-channel areas
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US20060138538A1 (en) * 2003-05-26 2006-06-29 Tadahiro Ohmi P-channel power MIS field effect transistor and switching circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298781A (en) * 1987-10-08 1994-03-29 Siliconix Incorporated Vertical current flow field effect transistor with thick insulator over non-channel areas
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US20060138538A1 (en) * 2003-05-26 2006-06-29 Tadahiro Ohmi P-channel power MIS field effect transistor and switching circuit

Also Published As

Publication number Publication date
TW201143089A (en) 2011-12-01

Similar Documents

Publication Publication Date Title
US7514731B2 (en) Switch elements and a DC/DC converter using the same
WO2013014943A3 (en) Semiconductor device
TW200625642A (en) Semiconductor integrated circuit device and fabrication porcess thereof
TW200925564A (en) Photoelectric conversion device and electronic device having the same
EP1363332A4 (en) Semiconductor device and method of manufacturing the same
TW201230050A (en) Electronics system, anti-fuse memory and method for the same
WO2012054504A3 (en) Thermoelectric apparatus and applications thereof
TW200945557A (en) Isolated CMOS and bipolar transistors, isolation structures therefor and methods of fabricating the same
TW201133637A (en) 3D polysilicon diode with low contact resistance and method for forming same
WO2007142937A3 (en) High-voltage bipolar-cmos-dmos integrated circuit devices and modular methods of forming the same
TW201351486A (en) Diode, bipolar junction transistor, and method for forming a diode in a fin field-effect transistor (FinFET) device
TW201123454A (en) A lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
TW201251018A (en) Semiconductor device and method of manufacturing the same
WO2009039028A3 (en) Gallium nitride diodes and integrated components
TW200705641A (en) Initial-on SCR device for on-chip ESD protection
TW201036143A (en) TVS with low capacitance and forward voltage drop with depleted SCR as steering diode
TW201246519A (en) Memory device, memory module and electronic device
TW200818652A (en) Circuit configurations to reduce snapback of a transient voltage suppressor
TW201133793A (en) Integrated circuit structure
WO2012093177A3 (en) Semiconductor device arrangement with a first semiconductor device and with a plurality of second semi conductor devices
TW557515B (en) Semiconductor device and method of manufacturing the same
TW201112558A (en) Overheat protection circuit and power supply integrated circuit
WO2009078069A1 (en) Semiconductor device
TW200620679A (en) Semiconductor device and methods for the production thereof
JP4938307B2 (en) Switch circuit, diode