201143089 六、發明說明： 【發明所屬之技術領域】 本發明係一種高源漏崩潰電壓之垂直場效電晶體，包括 有自源極之N+、N-、P、N-及漏極之N+，其源極之N+、 N-及P型體構成一體二極體（Body Diode)，而自源極之N +、N-及P型體亦構成一體二極體，亦就是形成一背對背連 接之二極體，具雙向性之高崩潰電壓值之垂直場效電晶體。 【先前技術】 如圖1所示為習知第1功率金屬氧化半導體場效電晶體 (PowerMOSFET)之構造圖’自圖中可知，其將源極s之N+ 與P型體連接在一起，而形成一第1體二極體(First Body Di〇de， BD1 ) ’自漏極D視之，其漏源朋潰電壓值（Drain-Source201143089 VI. Description of the Invention: [Technical Field] The present invention is a vertical field effect transistor with high source-drain breakdown voltage, including N+ with N+, N-, P, N- and drain from the source, The N+, N-, and P-type bodies of the source form a body Diode, and the N+, N-, and P-type bodies from the source also form an integral diode, that is, form a back-to-back connection. A diode, a vertical field effect transistor with a bidirectional high breakdown voltage value. [Prior Art] FIG. 1 is a structural diagram of a conventional first power metal oxide semiconductor field effect transistor (PowerMOSFET). As can be seen from the figure, the N+ of the source s is connected to the P type body. Forming a first body diode (First Body Di〇de, BD1) 'from the drain D, its drain source voltage value (Drain-Source
Breakdown Voltage，BVds)高；而自源極s視之，其源漏崩潰 電壓值（Source-Drain Breakdown Voltage, BVsd )只有 PN 結合 歷降，其壓降值低。 如圖2所示為習知第2功率金屬氧化半導體場效電晶體 (Power M0SFET)之構造圖，自圖中可知，其自源極s之N+、 P、N-到漏極D之N+型體’其漏極d到源極s之崩潰電壓值 為第2體二極體BD2與第3體二極體BD3之崩潰電壓值，其中 第3體二極體BD3之崩潰電壓值高，而第2體二極體BD2為順 向電壓降值；而自源極S視之，其源漏極崩潰電壓值BVsd為 第2體二極體BD2之崩潰電壓值與第3體二極體BD3之順向電 壓值，自N+ N-結合理論可知，其第2體二極體肋2之N+ p 結合二極體之崩潰電壓值’絕對小於本發明之N_ p結合之 崩潰電壓值。 【發明内容】 為了知_供雙向開關或同步整流（Syncj^onous Recti^er) 需求： 201143089 本發明在源極N+與p塑體間加有N-型體，以得高源漏 崩潰電壓值。 本發明可以得源漏極崩潰電壓值等於漏源極崩潰電壓值 之雙向開關特徵。 本發明亦可以依同步整流功能需求，而任意設定源漏極崩 潰電壓值與漏源極崩潰電壓值。 【實施方式】 如圖3所示為本發明n通道金屬氧化半導體場效電晶體 (N-Channel MOSFET)之構造圖，自圖中可知，源極s與N +型體連接在一起’N+型體與N-型體結合在一起，型體 再與P型體結合而形成N+ N- P結合之第4體二極體(FourthThe Breakdown Voltage (BVds) is high. From the source s, the Source-Drain Breakdown Voltage (BVsd) has only a PN combined with a drop, and its voltage drop is low. 2 is a structural diagram of a conventional second power metal oxide semiconductor field effect transistor (Power MOSFET). It can be seen from the figure that the N+ type from the source s N+, P, N- to the drain D The breakdown voltage value of the body d from the drain d to the source s is a breakdown voltage value of the second body diode BD2 and the third body diode BD3, wherein the breakdown voltage of the third body diode BD3 is high, and The second body diode BD2 is a forward voltage drop value, and the source-drain breakdown voltage value BVsd is the breakdown voltage value of the second body diode BD2 and the third body diode BD3 from the source S. The forward voltage value is known from the N+ N-binding theory, and the breakdown voltage value of the N+p combined with the diode of the second body diode rib 2 is absolutely smaller than the collapse voltage value of the N_p combination of the present invention. SUMMARY OF THE INVENTION In order to provide a bidirectional switch or synchronous rectification (Syncj^onous Recti^er) requirements: 201143089 The invention adds an N-type body between the source N+ and the p-plastic body to obtain a high source-drain collapse voltage value. . The present invention can provide a bidirectional switch feature in which the source drain breakdown voltage value is equal to the drain source breakdown voltage value. The present invention can also arbitrarily set the source-drain collapse voltage value and the drain-source breakdown voltage value according to the requirements of the synchronous rectification function. [Embodiment] FIG. 3 is a structural diagram of an n-channel metal oxide semiconductor field effect transistor (N-channel MOSFET) according to the present invention. It can be seen from the figure that the source s is connected to the N + type body 'N+ type. The body is combined with the N-type body, and the body is then combined with the P-type body to form a N+ N-P-bonded fourth body diode (Fourth)
Body Diode, BD4);漏極D與N+型體連接在一起，N+型體與 N-型體結合在一起’N-型體再與p型體結合而形成料N- p 結合之第5體二極體^_6〇(^0丨〇(16,5);自圖3可知， 其第4體二極體BD4之P型體與第5體二極體BD5之p型體 是共同體，自圖3之源漏極或漏源極視之，其為背對背之體 一極體，其 N+ 與 N-之摻雜濃度（j)〇ping c〇ncentrations) 依崩潰電壓值之需求而定，而不予自限。 如圖4所示為本發明p通道金屬氧化半導體場效電晶體 (P-ChannelMOSFET)之構造圖，自圖中可知，源極s與p +型體連接在一起，P+型體與p_型體結合在一起，p_型 體再與N型體結合而形成p+ p- n結合之第6體二極體 (sixth Body Diode，BD6);漏極D與p+型體連接在一起， P+型體與P-型體結合在一起，p—型體再與N型體結合而 形成P+ P- N結合之第7體二極體（Seventh B〇dy 201143089 第。7^體Sill:體_之N型體與 y視之^為面對面之體二姆；其p+ o^ingC〇ncentratlons)依崩潰電壓值之需求而定而不 卞目P良。 【圖式簡單說明】 圖1為習知第1功率金屬氧化半導體場效電晶體之構造 圖0 圖2為習知第2功率金屬氧化半導體場效電晶體之構造 圖。Body Diode, BD4); the drain D is connected to the N+ body, and the N+ body is combined with the N-type body. The N-type body is combined with the p-type body to form the N-p-bonded fifth body. Dipole ^_6〇(^0丨〇(16,5); It can be seen from Fig. 3 that the P-type body of the fourth body diode BD4 and the p-type body of the fifth body diode BD5 are a community, The source drain or drain source of Figure 3 is a back-to-back body, and the N+ and N-doping concentrations (j) 〇 ping c〇ncentrations) depend on the demand for the breakdown voltage value. Not self-limiting. FIG. 4 is a structural diagram of a p-channel metal oxide semiconductor field effect transistor (P-ChannelMOSFET) according to the present invention. As can be seen from the figure, the source s is connected with the p + body, and the P+ type and the p_ type are connected. When the bodies are combined, the p_type body is combined with the N type body to form a sixth body diode (BD6) in which p+ p-n is combined; the drain D and the p+ type body are connected together, P+ type The body is combined with the P-type body, and the p-type body is combined with the N-type body to form a P+ P-N bonded seventh body diode (Seventh B〇dy 201143089 No. 7^ body Sill: body_ The N-type body and the y-view are ^face-to-face body two; its p+ o^ingC〇ncentratlons) are determined according to the demand of the breakdown voltage value. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the structure of a conventional first power metal oxide semiconductor field effect transistor. Fig. 0 Fig. 2 is a structural view of a conventional second power metal oxide semiconductor field effect transistor.
圖3為本發明N通道金屬氧化半導體場效電晶體之構造 圖。 圖4為本發明p通道金屬氧化半導體場效電晶體之構造 圖0 【主要元件符號說明】 S 源極。 D 漏極。 G 閘極。 重掺雜N型體。 N-輕掺雜N型體。 N N型體。 p+重掺雜p型體。 P-輕掺雜p型體。 p p型體。 BD1、BD2、BD3、BD4、BD5、BD6 ' BD7 第卜第 2、第 3、 第4、第5、第6、第7體二極體。Fig. 3 is a structural view showing an N-channel metal oxide semiconductor field effect transistor of the present invention. 4 is a structure of a p-channel metal oxide semiconductor field effect transistor of the present invention. FIG. 0 [Description of main components] S source. D drain. G gate. Heavy doped N-type body. N-lightly doped N-type body. N N type body. p+ heavily doped p-type body. P-lightly doped p-type body. p p type body. BD1, BD2, BD3, BD4, BD5, BD6 ' BD7 卜2, 3rd, 4th, 5th, 6th, 7th body diode.