TWI497377B - Shift register for photo sensing touch panel - Google Patents
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Description
本發明係有關於一種移位暫存器,尤指一種用於光感應觸控面板的移位暫存器。The invention relates to a shift register, in particular to a shift register for a light-sensing touch panel.
目前顯示面板的設計趨勢為將閘極驅動電路中的移位暫存器整合在顯示面板上以代替外接的驅動晶片,減少製造程序及提高顯示面板的積集度,降低製作成本。At present, the design trend of the display panel is to integrate the shift register in the gate driving circuit on the display panel instead of the external driving chip, thereby reducing the manufacturing process, increasing the integration of the display panel, and reducing the manufacturing cost.
第1圖為顯示面板的移位暫存器100及畫素陣列110的示意圖。如第1圖所示,移位暫存器100包含多級移位暫存器,在此只畫出第N-1級移位暫存器102、第N級移位暫存器104及第N+1級移位暫存器106。FIG. 1 is a schematic diagram of a shift register 100 and a pixel array 110 of a display panel. As shown in FIG. 1, the shift register 100 includes a multi-stage shift register, and only the N-1th shift register 102, the Nth shift register 104, and the N+1 stage shift register 106.
由於第1圖的移位暫存器100中的每一級移位暫存器只輸出一個閘極訊號以驅動畫素陣列110,例如第N-1級移位暫存器102只輸出第N-1級閘極訊號SG(n-1)至畫素陣列110,第N級移位暫存器104只輸出第N級閘極訊號SG(n)至畫素陣列110,第N+1級移位暫存器106只輸出第N+1級閘極訊號SG(n+1)至畫素陣列110。然而在顯示面板加入光感應觸控功能後所形成的光感應觸控顯示面板,除了需要接收來自於移位暫存器100的閘極訊號外,還需要接 收不同於閘極訊號的另一訊號以正常動作,若以外接驅動晶片提供另一訊號予光感應觸控顯示面板,則上述整合移位暫存器在顯示面板上的優點便無法延伸到光感應觸控顯示面板上。Since each stage shift register in the shift register 100 of FIG. 1 outputs only one gate signal to drive the pixel array 110, for example, the N-1th shift register 102 outputs only the N-th The first stage gate signal SG(n-1) to the pixel array 110, the Nth stage shift register 104 outputs only the Nth stage gate signal SG(n) to the pixel array 110, and the N+1th stage shift The bit buffer 106 outputs only the N+1th gate signal SG(n+1) to the pixel array 110. However, the optically-sensitive touch display panel formed after the display panel is added with the light-sensing touch function needs to receive the gate signal from the shift register 100, and needs to be connected. Another signal different from the gate signal is normally operated. If the external driver chip provides another signal to the light-sensing touch display panel, the advantages of the integrated shift register on the display panel cannot be extended to the light. Inductive touch display panel.
本發明的實施例揭露一種可提供兩個不同脈波寬度輸出訊號以應用於光感應觸控面板的第N級移位暫存器。此種移位暫存器包含驅動電路及第一下拉電路。驅動電路用以根據第一驅動訊號提供第一閘極訊號及感測訊號。其中第一閘極訊號及感測訊號的脈衝寬度相異。Embodiments of the present invention disclose an Nth stage shift register that can provide two different pulse width output signals for use in a light sensing touch panel. The shift register includes a drive circuit and a first pull-down circuit. The driving circuit is configured to provide the first gate signal and the sensing signal according to the first driving signal. The pulse widths of the first gate signal and the sensing signal are different.
本發明整合閘極驅動電路中的移位暫存器在光感應觸控面板上,且第N級移位暫存器可產生兩個不同脈波寬度輸出訊號,用以提供光感應觸控顯示面板所需的訊號,不需要外接驅動晶片,因而減少光感應觸控顯示面板的製造程序及提高積集度,減少工序並降低製作成本。The shift register in the integrated gate driving circuit of the invention is on the light sensing touch panel, and the Nth stage shift register can generate two different pulse width output signals for providing the light sensing touch display. The signal required by the panel does not require an external driver chip, thereby reducing the manufacturing process of the light-sensitive touch display panel and improving the integration, reducing the number of processes and reducing the manufacturing cost.
第2圖為本發明一實施例的第N級移位暫存器200的示意圖。如第2圖所示,第N級移位暫存器200包含驅動電路202、第一下拉電路204、第一下拉控制電路206、主下拉電路208、上拉電路210、第二下拉電路212、第二下拉控制電路214及電容216。驅動電路202用以接收並根據第一驅動訊號Q(n)及第一高頻時脈訊號HC1提 供第一閘極訊號G(n)及感測訊號S(n)。第一下拉控制電路206用以根據第一驅動訊號Q(n)及第一低頻時脈訊號LC1產生第一下拉控制訊號K(n)。第一下拉電路204耦接於驅動電路202及第一下拉控制電路206,用以根據第一下拉控制訊號K(n)下拉第一驅動訊號Q(n)、第一閘極訊號G(n)及感測訊號S(n)。主下拉電路208耦接於驅動電路202,用以根據第二閘極訊號G(n+2)(可為來自第N+2級移位暫存器的閘極訊號)下拉第一驅動訊號Q(n)及感測訊號S(n)。第二下拉控制電路214用以根據第一驅動訊號Q(n)及第二低頻時脈訊號LC2產生第二下拉控制訊號P(n)。第二下拉電路212耦接於驅動電路202及第二下拉控制電路214,用以根據第二下拉控制訊號P(n)下拉第一驅動訊號Q(n)、第一閘極訊號G(n)及感測訊號S(n)。上拉電路210耦接於驅動電路202,用以根據第一驅動訊號Q(n)提供第二驅動訊號Q(n+1)予另一級移位暫存器(可為第N+1級移位暫存器)的驅動電路。FIG. 2 is a schematic diagram of an Nth stage shift register 200 according to an embodiment of the present invention. As shown in FIG. 2, the Nth stage shift register 200 includes a driving circuit 202, a first pull-down circuit 204, a first pull-down control circuit 206, a main pull-down circuit 208, a pull-up circuit 210, and a second pull-down circuit. 212, a second pull-down control circuit 214 and a capacitor 216. The driving circuit 202 is configured to receive and according to the first driving signal Q(n) and the first high frequency clock signal HC1 For the first gate signal G(n) and the sensing signal S(n). The first pull-down control circuit 206 is configured to generate a first pull-down control signal K(n) according to the first driving signal Q(n) and the first low-frequency clock signal LC1. The first pull-down circuit 204 is coupled to the driving circuit 202 and the first pull-down control circuit 206 for pulling down the first driving signal Q(n) and the first gate signal G according to the first pull-down control signal K(n). (n) and the sensing signal S(n). The main pull-down circuit 208 is coupled to the driving circuit 202 for pulling down the first driving signal Q according to the second gate signal G(n+2) (which can be the gate signal from the N+2 stage shift register) (n) and the sensing signal S(n). The second pull-down control circuit 214 is configured to generate a second pull-down control signal P(n) according to the first driving signal Q(n) and the second low-frequency clock signal LC2. The second pull-down circuit 212 is coupled to the driving circuit 202 and the second pull-down control circuit 214 for pulling down the first driving signal Q(n) and the first gate signal G(n) according to the second pull-down control signal P(n). And the sensing signal S(n). The pull-up circuit 210 is coupled to the driving circuit 202 for providing the second driving signal Q(n+1) to another stage shift register according to the first driving signal Q(n) (which may be the N+1th shift) The drive circuit of the bit register).
驅動電路202包含第一電晶體T21、第二電晶體T22、第三電晶體T23及第四電晶體T24。上拉電路210包含第五電晶體T11。主下拉電路208包含第六電晶體T31及第七電晶體T41。第一下拉電路204包含第八電晶體T35、第九電晶體T33及第十電晶體T43。第一下拉控制電路206包含第十一電晶體T61、第十二電晶體T62、第十三電晶體T63及第十四電晶體T64。第二下拉電路212包含第十五電晶體T34、第十六電晶體T32及第十七電晶體T42。第二下拉控制電路214包含第十八電晶體T51、第十九電晶體T52、第二 十電晶體T53及第二十一電晶體T54。The driving circuit 202 includes a first transistor T21, a second transistor T22, a third transistor T23, and a fourth transistor T24. The pull-up circuit 210 includes a fifth transistor T11. The main pull-down circuit 208 includes a sixth transistor T31 and a seventh transistor T41. The first pull-down circuit 204 includes an eighth transistor T35, a ninth transistor T33, and a tenth transistor T43. The first pull-down control circuit 206 includes an eleventh transistor T61, a twelfth transistor T62, a thirteenth transistor T63, and a fourteenth transistor T64. The second pull-down circuit 212 includes a fifteenth transistor T34, a sixteenth transistor T32, and a seventeenth transistor T42. The second pull-down control circuit 214 includes an eighteenth transistor T51, a nineteenth transistor T52, and a second Ten transistor T53 and twenty-first transistor T54.
第一電晶體T21具有用以接收第一驅動訊號Q(n)的控制端,用以接收第一高頻時脈訊號HC1的第一端,及用以提供第一閘極訊號G(n)的第二端。第二電晶體T22具有耦接於第一電晶體T21之控制端的控制端,耦接於第一電晶體T21之第一端的第一端,及第二端。第三電晶體T23具有耦接於第一電晶體T21之控制端的控制端,耦接於第一電晶體T21之第一端的第一端,及第二端。第四電晶體T24具有耦接於第二電晶體T22之第二端的控制端,耦接於第三電晶體T23之第二端的第一端,及用以提供感測訊號S(n)的第二端。第五電晶體T11具有耦接於第二電晶體T22之第二端的控制端,耦接於第一電晶體T21之第二端的第一端,及用以提供第二驅動訊號Q(n+1)的第二端。第六電晶體T31具有用以接收第二閘極訊號G(n+2)的控制端,耦接於第四電晶體T24之第二端的第一端,及用以接收第一低電位Sn_VSS的第二端。第七電晶體T41具有耦接於第六電晶體T31之控制端的控制端,耦接於第一電晶體T21之控制端的第一端,及用以接收第二低電位Gn_VSS的第二端。第八電晶體T35具有用以接收第一下拉控制訊號K(n)的控制端,耦接於第四電晶體T24之第二端的第一端,及用以接收第一低電位Sn_VSS的第二端。第九電晶體T33具有耦接於第八電晶體T35之控制端的控制端,耦接於第一電晶體T21之第二端的第一端,及用以接收第二低電位Gn_VSS的第二端。第十電晶體T43具有耦接於第八電晶體T35之控制端的控制端,耦接於第一電晶體T21之控制端的第一 端,及第二端,可耦接於第一電晶體T21之第二端或第九電晶體T33之第二端。第十一電晶體T61具有用以接收第一低頻時脈訊號LC1的控制端,耦接於第十一電晶體T61之控制端的第一端,及第二端。第十二電晶體T62具有用以接收第一驅動訊號Q(n)的控制端,耦接於第十一電晶體T61之第二端的第一端,及耦接於第九電晶體T33之第二端的第二端。第十三電晶體T63具有耦接於第十一電晶體T61之第二端的控制端,耦接於第十一電晶體T61之控制端的第一端,及耦接於第八電晶體T35之控制端的第二端。第十四電晶體T64具有耦接於第十二電晶體T62之控制端的控制端,耦接於第十三電晶體T63之第二端的第一端,及耦接於第九電晶體T33之第二端的第二端。第十五電晶體T34具有用以接收第二下拉控制訊號P(n)的控制端,耦接於第四電晶體T24之第二端的第一端,及用以接收第一低電位Sn_VSS的第二端。第十六電晶體T32具有耦接於第十五電晶體T34之控制端的控制端,耦接於第一電晶體T21之第二端的第一端,及用以接收第二低電位Gn_VSS的第二端。第十七電晶體T42具有耦接於第十五電晶體T34之控制端的控制端,及耦接於第一電晶體T21之控制端的第一端,及第二端,可耦接於第一電晶體T21之第二端或第十六電晶體T32之第二端。第十八電晶體T51具有用以接收第二低頻時脈訊號LC2的控制端,耦接於第十八電晶體T51之控制端的第一端,及第二端。第十九電晶體T52具有用以接收第一驅動訊號Q(n)的控制端,耦接於第十八電晶體T51之第二端的第一端,及耦接於第十六電晶體T32之第二端的第二端。第二十電晶體T53具有耦接於第十八電晶體T51之第二端的控制端,耦接 於第十八電晶體T51之控制端的第一端,及耦接於第十五電晶體T34之控制端的第二端。第二十一電晶體T54具有耦接於第十九電晶體T52之控制端的控制端,耦接於第二十電晶體T53之第二端的第一端,及耦接於第十六電晶體T32之第二端的第二端。電容216耦接於第一電晶體T21之控制端及第二端之間。上述第一低電位Sn_VSS可高於第二低電位Gn_VSS。The first transistor T21 has a control terminal for receiving the first driving signal Q(n) for receiving the first end of the first high frequency clock signal HC1, and for providing the first gate signal G(n) The second end. The second transistor T22 has a control end coupled to the control end of the first transistor T21, coupled to the first end of the first end of the first transistor T21, and the second end. The third transistor T23 has a control end coupled to the control end of the first transistor T21, coupled to the first end of the first end of the first transistor T21, and the second end. The fourth transistor T24 has a control end coupled to the second end of the second transistor T22, a first end coupled to the second end of the third transistor T23, and a second portion for providing the sensing signal S(n) Two ends. The fifth transistor T11 has a control end coupled to the second end of the second transistor T22, coupled to the first end of the second end of the first transistor T21, and configured to provide the second driving signal Q(n+1) The second end of the). The sixth transistor T31 has a control terminal for receiving the second gate signal G(n+2), a first terminal coupled to the second terminal of the fourth transistor T24, and a first low potential Sn_VSS. Second end. The seventh transistor T41 has a control end coupled to the control terminal of the sixth transistor T31, a first end coupled to the control terminal of the first transistor T21, and a second terminal for receiving the second low potential Gn_VSS. The eighth transistor T35 has a control terminal for receiving the first pull-down control signal K(n), a first end coupled to the second end of the fourth transistor T24, and a first terminal for receiving the first low potential Sn_VSS Two ends. The ninth transistor T33 has a control end coupled to the control terminal of the eighth transistor T35, a first end coupled to the second end of the first transistor T21, and a second end for receiving the second low potential Gn_VSS. The tenth transistor T43 has a control end coupled to the control end of the eighth transistor T35, and is coupled to the first end of the control end of the first transistor T21. The second end of the first transistor T21 or the second end of the ninth transistor T33. The eleventh transistor T61 has a control end for receiving the first low frequency clock signal LC1, a first end coupled to the control end of the eleventh transistor T61, and a second end. The twelfth transistor T62 has a control end for receiving the first driving signal Q(n), a first end coupled to the second end of the eleventh transistor T61, and a first end coupled to the ninth transistor T33. The second end of the two ends. The thirteenth transistor T63 has a control end coupled to the second end of the eleventh transistor T61, coupled to the first end of the control end of the eleventh transistor T61, and coupled to the control of the eighth transistor T35 The second end of the end. The fourteenth transistor T64 has a control end coupled to the control end of the twelfth transistor T62, coupled to the first end of the second end of the thirteenth transistor T63, and coupled to the ninth transistor T33 The second end of the two ends. The fifteenth transistor T34 has a control terminal for receiving the second pull-down control signal P(n), a first end coupled to the second end of the fourth transistor T24, and a first terminal for receiving the first low potential Sn_VSS Two ends. The sixteenth transistor T32 has a control end coupled to the control end of the fifteenth transistor T34, a first end coupled to the second end of the first transistor T21, and a second end for receiving the second low potential Gn_VSS end. The seventh transistor T42 has a control end coupled to the control end of the fifteenth transistor T34, and a first end coupled to the control end of the first transistor T21, and a second end coupled to the first The second end of the crystal T21 or the second end of the sixteenth transistor T32. The eighteenth transistor T51 has a control end for receiving the second low frequency clock signal LC2, a first end coupled to the control end of the eighteenth transistor T51, and a second end. The nineteenth transistor T52 has a control terminal for receiving the first driving signal Q(n), a first end coupled to the second end of the eighteenth transistor T51, and a coupling to the sixteenth transistor T32. The second end of the second end. The twentieth transistor T53 has a control end coupled to the second end of the eighteenth transistor T51, coupled The first end of the control end of the eighteenth transistor T51, and the second end of the control end of the fifteenth transistor T34. The twenty-first transistor T54 has a control end coupled to the control end of the nineteenth transistor T52, coupled to the first end of the second end of the twentieth transistor T53, and coupled to the sixteenth transistor T32. The second end of the second end. The capacitor 216 is coupled between the control end and the second end of the first transistor T21. The first low potential Sn_VSS may be higher than the second low potential Gn_VSS.
第3圖為第2圖的第N級移位暫存器200的工作相關訊號波形示意圖,其中橫軸t為時間軸。在第3圖中,由上往下的訊號分別為第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3、第四高頻時脈訊號HC4、第三閘極訊號G(n-1)(可為來自第N-1級移位暫存器的閘極訊號)、第一閘極訊號G(n)、第一驅動訊號Q(n)、感測訊號S(n)及第二閘極訊號G(n+2)。第三閘極訊號G(n-1)可透過第N-1級移位暫存器的上拉電路T11N-1 耦接到第N級移位暫存器200,以提供第N級移位暫存器200的第一驅動訊號Q(n)。上述第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3及第四高頻時脈訊號HC4的頻率高於第一低頻時脈訊號LC1及第二低頻時脈訊號LC2。第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3及第四高頻時脈訊號HC4係為依順序循環施加於各級移位暫存器的時脈訊號。舉例而言,第N-1級移位暫存器可接收第四高頻時脈訊號HC4,第N級移位暫存器可接收第一高頻時脈訊號HC1,第N+1級移位暫存器可接收第二高頻時脈訊號HC2,第N+2級移位暫存器可接收第三高頻時 脈訊號HC3,第N+3級移位暫存器可接收第四高頻時脈訊號HC4,第N+5級移位暫存器可接收第一高頻時脈訊號HC1。FIG. 3 is a schematic diagram showing the waveforms of the operation-related signals of the Nth stage shift register 200 of FIG. 2, wherein the horizontal axis t is the time axis. In the third figure, the signals from top to bottom are the first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3, the fourth high frequency clock signal HC4, The third gate signal G(n-1) (which may be the gate signal from the N-1th stage shift register), the first gate signal G(n), the first driving signal Q(n), The sensing signal S(n) and the second gate signal G(n+2). The third gate signal G(n-1) is coupled to the Nth stage shift register 200 through the pull-up circuit T11 N-1 of the N-1th stage shift register to provide the Nth stage shift The first drive signal Q(n) of the bit buffer 200. The frequencies of the first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3, and the fourth high frequency clock signal HC4 are higher than the first low frequency clock signal LC1 and the second Low frequency clock signal LC2. The first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3, and the fourth high frequency clock signal HC4 are cyclically applied to the shift register of each stage in sequence. Clock signal. For example, the N-1th shift register can receive the fourth high frequency clock signal HC4, and the Nth stage shift register can receive the first high frequency clock signal HC1, the N+1th shift The bit buffer can receive the second high frequency clock signal HC2, the N+2 stage shift register can receive the third high frequency clock signal HC3, and the N+3 stage shift register can receive the fourth The high frequency clock signal HC4, the N+5th stage shift register can receive the first high frequency clock signal HC1.
如第3圖所示,於T1時段,第三閘極訊號G(n-1)由低電位切換至高電位,由於第三閘極訊號G(n-1)可透過第N-1級移位暫存器的上拉電路T11N-1 耦接到第N級移位暫存器200的第一電晶體T21之控制端,所以電容216會充電使第一驅動訊號Q(n)上昇至第一高電位VH1,並據以導通第一電晶體T21、第二電晶體T22及第三電晶體T23,以及導通第十九電晶體T52、第二十一電晶體T54、第十二電晶體T62及第十四電晶體T64,進而下拉第一下拉控制訊號K(n)及第二下拉控制訊號P(n)至第二低電位Gn_VSS以截止第十五電晶體T34、第十六電晶體T32、第十七電晶體T42、第八電晶體T35、第九電晶體T33及第十電晶體T43。As shown in FIG. 3, during the T1 period, the third gate signal G(n-1) is switched from the low potential to the high potential, because the third gate signal G(n-1) is transmissive through the N-1th stage. The pull-up circuit T11 N-1 of the register is coupled to the control terminal of the first transistor T21 of the Nth stage shift register 200, so the capacitor 216 is charged to raise the first driving signal Q(n) to the first a high potential VH1, and according to the first transistor T21, the second transistor T22 and the third transistor T23, and the nineteenth transistor T52, the twenty-first transistor T54, the twelfth transistor T62 And the fourteenth transistor T64, further pulling down the first pull-down control signal K(n) and the second pull-down control signal P(n) to the second low potential Gn_VSS to cut off the fifteenth transistor T34, the sixteenth transistor T32, seventeenth transistor T42, eighth transistor T35, ninth transistor T33, and tenth transistor T43.
接著於T2時段,第三閘極訊號G(n-1)由高電位切換至低電位,可使第N-1級移位暫存器的上拉電路T11N-1 截止,因此第三閘極訊號G(n-1)的低電位無法經由第N-1級移位暫存器的上拉電路改變第一驅動訊號Q(n)。此時第一高頻時脈訊號HC1由低電位切換至高電位,透過電容216的電容耦合作用將第一驅動訊號Q(n)由第一高電位VH1上拉至第二高電位VH2,將具有高電位的第一高頻時脈訊號HC1輸出為第一閘極訊號G(n),以及將具有高電位的第一高頻時脈訊號HC1輸出至第二電晶體T22的第二端以導通第四電晶體T24及第五電晶體T11。第一閘極訊號G(n)可透過第五電晶體T11輸出 第二驅動訊號Q(n+1)至第N+1級移位暫存器。具有高電位第一高頻時脈訊號HC1透過第三電晶體T23及第四電晶體T24輸出一具有第三高電位VH3的感測訊號S(n)。Then, in the T2 period, the third gate signal G(n-1) is switched from the high potential to the low potential, so that the pull-up circuit T11 N-1 of the N- 1th stage shift register can be turned off, so the third gate The low potential of the pole signal G(n-1) cannot change the first driving signal Q(n) via the pull-up circuit of the N-1th stage shift register. At this time, the first high frequency clock signal HC1 is switched from a low potential to a high potential, and the capacitive coupling of the capacitor 216 pulls the first driving signal Q(n) from the first high potential VH1 to the second high potential VH2, which will have The high-frequency first high-frequency clock signal HC1 is output as the first gate signal G(n), and the first high-frequency clock signal HC1 having a high potential is output to the second end of the second transistor T22 to be turned on. The fourth transistor T24 and the fifth transistor T11. The first gate signal G(n) can output the second driving signal Q(n+1) to the N+1th shift register through the fifth transistor T11. The high-frequency first high-frequency clock signal HC1 outputs a sensing signal S(n) having a third high potential VH3 through the third transistor T23 and the fourth transistor T24.
第4圖為第2圖的第N級移位暫存器200的驅動電路202包含第四電晶體T24的寄生電容Cds及負載電容CL的示意圖。於T3時段,第一高頻時脈訊號HC1由高電位切換至低電位,透過透過電容216的電容耦合作用將第一驅動訊號Q(n)由第二高電位VH2再度下拉至第一高電位VH1,使第一閘極訊號G(n)以及第二電晶體T22的第二端下降為低電位,以截止第三電晶體T23及第四電晶體T24。截止後的第四電晶體T24隔絕了低電位的第一高頻訊號HC1與感測訊號S(n),所以感測訊號S(n)處於浮接(floating)狀態,且透過第四電晶體T24的寄生電容Cds以及負載電容CL,使S(n)維持在第四高電位VH4。如此,感測訊號S(n)在T3時段不會隨著第一高頻時脈訊號HC1的變化下降為低電位而可維持於第四高電位VH4,第四高電位VH4可只稍微低於第三高電位VH3。4 is a schematic diagram of the drive circuit 202 of the Nth stage shift register 200 of FIG. 2 including the parasitic capacitance Cds and the load capacitance CL of the fourth transistor T24. During the T3 period, the first high frequency clock signal HC1 is switched from a high potential to a low potential, and the first driving signal Q(n) is pulled down from the second high potential VH2 to the first high potential through the capacitive coupling of the transmission capacitor 216. VH1 causes the first gate signal G(n) and the second end of the second transistor T22 to fall to a low potential to turn off the third transistor T23 and the fourth transistor T24. The fourth transistor T24 after the cutoff isolates the low-frequency first high-frequency signal HC1 and the sensing signal S(n), so the sensing signal S(n) is in a floating state and transmits through the fourth transistor. The parasitic capacitance Cds of T24 and the load capacitance CL maintain S(n) at the fourth high potential VH4. In this way, the sensing signal S(n) does not decrease to a low potential with the change of the first high frequency clock signal HC1 during the T3 period, and can be maintained at the fourth high potential VH4, and the fourth high potential VH4 can be only slightly lower. The third high potential VH3.
直到T4時段,當第三高頻時脈訊號HC3由低電位切換為高電位後,使第二閘極訊號G(n+2)由低電位切換至高電位,第六電晶體T31及第七電晶體T41導通,才下拉第一驅動訊號Q(n)及感測訊號S(n)。由於第一高頻時脈訊號HC1、第二高頻時脈訊號HC2、第三高頻時脈訊號HC3及第四高頻時脈訊號HC4為具有相同脈波寬度且可為依順序施加於第N級移位暫存器200、第N+1級移位暫存 器、第N+2級移位暫存器及第N+3級移位暫存器的高頻時脈訊號。所以本實施例中,感測訊號S(n)維持在高電位的時間較第一閘極訊號G(n)維持在高電位的時間多一個高頻時脈訊號脈寬的時間,但本發明不限於此,凡可輸出兩個或兩個以上脈寬不同的輸出訊號均屬本發明之範圍。Until the T4 period, when the third high frequency clock signal HC3 is switched from the low potential to the high potential, the second gate signal G(n+2) is switched from the low potential to the high potential, and the sixth transistor T31 and the seventh power When the crystal T41 is turned on, the first driving signal Q(n) and the sensing signal S(n) are pulled down. The first high frequency clock signal HC1, the second high frequency clock signal HC2, the third high frequency clock signal HC3, and the fourth high frequency clock signal HC4 have the same pulse width and can be sequentially applied to the first N-level shift register 200, N+1 shift temporary storage The high frequency clock signal of the N+2 stage shift register and the N+3 stage shift register. Therefore, in this embodiment, the time when the sensing signal S(n) is maintained at a high potential is longer than the time when the first gate signal G(n) is maintained at a high potential, and the time interval of the high-frequency clock signal is wide, but the present invention Without being limited thereto, it is within the scope of the invention to output two or more output signals having different pulse widths.
上述實施例中,感測訊號S(n)維持在高電位的時間較第一閘極訊號G(n)維持在高電位的時間長。因此整合在光感應觸控顯示面板的第N級移位暫存器的驅動電路202可輸出兩個脈寬不同的輸出訊號,即脈寬相異的感測訊號S(n)及第一閘極訊號G(n),用以提供光感應觸控顯示面板。In the above embodiment, the time during which the sensing signal S(n) is maintained at a high potential is longer than the time at which the first gate signal G(n) is maintained at a high potential. Therefore, the driving circuit 202 of the Nth stage shift register integrated in the light sensing touch display panel can output two output signals with different pulse widths, that is, the sensing signals S(n) having different pulse widths and the first gate. The extreme signal G(n) is used to provide a light-sensitive touch display panel.
第5圖為本發明另一實施例第N級移位暫存器500的示意圖。第5圖中只有上拉電路510的佈局位置與第2圖不同,亦即上拉電路510的第五電晶體T11,具有用以接收第三閘極訊號G(n-1)的控制端,耦接於第五電晶體T11之控制端的第一端,及耦接於該第一電晶體T21之控制端的第二端。本實施例中,第三閘極訊號G(n-1)可透過第N級移位暫存器的上拉電路T11耦接到第N級移位暫存器200的第一電晶體T21之控制端,以提供第N級移位暫存器200的第一驅動訊號Q(n)。其餘第N級移位暫存器500的驅動電路202、第一下拉電路204、第一下拉控制電路206、主下拉電路208、第二下拉電路212、第二下拉控制電路214及電容216的結構、工作方式及訊號輸出均和第2至4圖及前一實施例所述相似,在此不在贅 述。FIG. 5 is a schematic diagram of an Nth stage shift register 500 according to another embodiment of the present invention. In FIG. 5, only the layout position of the pull-up circuit 510 is different from that of FIG. 2, that is, the fifth transistor T11 of the pull-up circuit 510 has a control terminal for receiving the third gate signal G(n-1). The first end of the control end of the first transistor T21 is coupled to the second end of the control end of the first transistor T21. In this embodiment, the third gate signal G(n-1) is coupled to the first transistor T21 of the Nth stage shift register 200 through the pull-up circuit T11 of the Nth stage shift register. The control terminal is configured to provide a first driving signal Q(n) of the Nth stage shift register 200. The driving circuit 202 of the remaining Nth stage shift register 500, the first pull-down circuit 204, the first pull-down control circuit 206, the main pull-down circuit 208, the second pull-down circuit 212, the second pull-down control circuit 214, and the capacitor 216 The structure, working mode and signal output are similar to those described in Figures 2 to 4 and the previous embodiment. Said.
第6圖為本發明另一實施例第N級移位暫存器600的示意圖。第N級移位暫存器600的驅動電路202、第一下拉電路204、第一下拉控制電路206、主下拉電路208、第二下拉電路212、第二下拉控制電路214及電容216的結構及工作原理和第2圖相似,不再贅述。第6圖的上拉電路610耦接於驅動電路202,用以根據第一驅動訊號Q(n),同時分別提供第二驅動訊號Q(n+1)及第三驅動訊號Q(n-1)予另外二級移位暫存器(可為第N+1級移位暫存器及第N-1級移位暫存器)的驅動電路。第6圖的次下拉電路618亦耦接於驅動電路202,用以根據第四閘極訊號G(n-2)(可為來自第N-2級移位暫存器的閘極訊號)下拉第一驅動訊號Q(n)、第一閘極訊號G(n)及感測訊號S(n)。FIG. 6 is a schematic diagram of an Nth stage shift register 600 according to another embodiment of the present invention. The driving circuit 202 of the Nth stage shift register 600, the first pull-down circuit 204, the first pull-down control circuit 206, the main pull-down circuit 208, the second pull-down circuit 212, the second pull-down control circuit 214, and the capacitor 216 The structure and working principle are similar to those in Figure 2 and will not be described again. The pull-up circuit 610 of FIG. 6 is coupled to the driving circuit 202 for simultaneously providing the second driving signal Q(n+1) and the third driving signal Q(n-1) according to the first driving signal Q(n). The drive circuit of the other two-stage shift register (which may be the N+1th shift register and the N-1th shift register). The secondary pull-down circuit 618 of FIG. 6 is also coupled to the driving circuit 202 for pulling down according to the fourth gate signal G(n-2) (which can be the gate signal from the N-2 stage shift register) The first driving signal Q(n), the first gate signal G(n), and the sensing signal S(n).
上拉電路610包含第五電晶體T11及第二十二電晶體T13。次下拉電路618包含第二十三電晶體T36及第二十四電晶體T45。本實施例中,第五電晶體T11具有耦接於第二電晶體T22之第二端的控制端,耦接於第五電晶體T11之控制端的第一端,及用以提供第二驅動訊號(Qn+1)的第二端。第二十二電晶體T13具有耦接於第五電晶體T11之控制端的控制端,耦接於第五電晶體T11之第一端的第一端,及用以提供第三驅動訊號Q(n-1)的第二端。第二十三電晶體T36具有用以接收第四閘極訊號G(n-2)的控制端,耦接於第四電晶體T24之第二端的第一端,及用以接收第一低電位Sn_VSS的第二 端。第二十四電晶體T45具有耦接於第二十三電晶體T36之控制端的控制端,耦接於第一電晶體T22之控制端的第一端,及用以接收第二低電位Gn_VSS的第二端。The pull-up circuit 610 includes a fifth transistor T11 and a twenty-second transistor T13. The secondary pull-down circuit 618 includes a twenty-third transistor T36 and a twenty-fourth transistor T45. In this embodiment, the fifth transistor T11 has a control end coupled to the second end of the second transistor T22, coupled to the first end of the control end of the fifth transistor T11, and configured to provide a second driving signal ( The second end of Qn+1). The second transistor T13 has a control end coupled to the control end of the fifth transistor T11, coupled to the first end of the first end of the fifth transistor T11, and configured to provide a third driving signal Q(n) The second end of -1). The twenty-third transistor T36 has a control terminal for receiving the fourth gate signal G(n-2), a first end coupled to the second end of the fourth transistor T24, and a first low potential for receiving Second of Sn_VSS end. The twenty-fourth transistor T45 has a control end coupled to the control end of the thirteenth transistor T36, a first end coupled to the control end of the first transistor T22, and a second terminal for receiving the second low potential Gn_VSS Two ends.
第6圖的主下拉電路208及次下拉電路618可分別根據第二閘極訊號G(n+2)及第四閘極訊號G(n-2)下拉第一驅動訊號Q(n)、第一閘極訊號G(n)及感測訊號S(n),也就是可由第N+2級或由第N-2級移位暫存器的閘極訊號控制第N級移位暫存器的訊號輸出時間。當第6圖的驅動電路202將具有高電位的第一高頻時脈訊號HC1輸出至第二電晶體T22的第二端以導通第五電晶體T11及第二十二電晶體T13時,第一高頻時脈訊號HC1的高電位可同時透過第五電晶體T11輸出第二驅動訊號Q(n+1)至第N+1級移位暫存器及透過第二十二電晶體T13輸出第三驅動訊號Q(n-1)至第N-1級移位暫存器,所以第6圖的第N級移位暫存器600可同時驅動第N-1級及第N+1級移位暫存器。第N級移位暫存器600若配合適當的控制及時脈訊號,即可控制移位暫存器往上級或是往下級傳遞訊號,達到雙向傳輸(Bi-directions)的功能。又因為第N級移位暫存器600的驅動電路202工作原理和第2圖相似,所以第N級移位暫存器600可同時輸出兩個脈寬不同的輸出訊號,即脈寬相異的感測訊號S(n)及第一閘極訊號G(n),應用於光感應觸控顯示面板。The main pull-down circuit 208 and the second pull-down circuit 618 of FIG. 6 can pull down the first driving signal Q(n) according to the second gate signal G(n+2) and the fourth gate signal G(n-2), respectively. a gate signal G(n) and a sensing signal S(n), that is, the Nth stage shift register can be controlled by the gate signal of the N+2 stage or the N-2 stage shift register Signal output time. When the driving circuit 202 of FIG. 6 outputs the first high frequency clock signal HC1 having a high potential to the second end of the second transistor T22 to turn on the fifth transistor T11 and the twelfth transistor T13, The high potential of the high frequency clock signal HC1 can simultaneously output the second driving signal Q(n+1) to the N+1th shift register through the fifth transistor T11 and output through the twenty second transistor T13. The third driving signal Q(n-1) to the N-1th stage shift register, so the Nth stage shift register 600 of FIG. 6 can simultaneously drive the N-1th stage and the N+1th stage. Shift register. The Nth stage shift register 600 can control the shift register to transfer signals to the upper level or the lower level to achieve the bi-directionals function if the appropriate timing signal is matched. Moreover, since the driving circuit 202 of the Nth stage shift register 600 works similarly to FIG. 2, the Nth stage shift register 600 can simultaneously output two output signals having different pulse widths, that is, the pulse widths are different. The sensing signal S(n) and the first gate signal G(n) are applied to the light sensing touch display panel.
第7圖為本發明另一實施例第N級移位暫存器700的示意圖。第N級移位暫存器700的驅動電路202、第一下拉電路204、第一 下拉控制電路206、主下拉電路208、第二下拉電路212、第二下拉控制電路214、電容216及次下拉電路618的結構及工作原理和第6圖相似,不再贅述。第7圖的上拉電路710耦接於驅動電路202,用以根據第一驅動訊號Q(n),同時分別提供第二驅動訊號Q(n+1)及第三驅動訊號Q(n-1)予另外二級移位暫存器(可為第N+1級移位暫存器及第N-1級移位暫存器)的驅動電路。FIG. 7 is a schematic diagram of an Nth stage shift register 700 according to another embodiment of the present invention. The driving circuit 202 of the Nth stage shift register 700, the first pull-down circuit 204, and the first The structure and working principle of the pull-down control circuit 206, the main pull-down circuit 208, the second pull-down circuit 212, the second pull-down control circuit 214, the capacitor 216, and the secondary pull-down circuit 618 are similar to those of FIG. 6, and will not be described again. The pull-up circuit 710 of FIG. 7 is coupled to the driving circuit 202 for simultaneously providing the second driving signal Q(n+1) and the third driving signal Q(n-1) according to the first driving signal Q(n). The drive circuit of the other two-stage shift register (which may be the N+1th shift register and the N-1th shift register).
上拉電路710包含第五電晶體T11及第二十二電晶體T13。本實施例中,第五電晶體T11具有耦接於第二電晶體T22之第二端的控制端,耦接於第一電晶體T21之第二端的第一端,及用以提供第二驅動訊號(Qn+1)的第二端。第二十二電晶體T13具有耦接於第五電晶體T11之控制端的控制端,耦接於第五電晶體T11之第一端的第一端,及用以提供第三驅動訊號Q(n-1)的第二端。The pull-up circuit 710 includes a fifth transistor T11 and a twenty-second transistor T13. In this embodiment, the fifth transistor T11 has a control end coupled to the second end of the second transistor T22, coupled to the first end of the second end of the first transistor T21, and configured to provide the second driving signal. The second end of (Qn+1). The second transistor T13 has a control end coupled to the control end of the fifth transistor T11, coupled to the first end of the first end of the fifth transistor T11, and configured to provide a third driving signal Q(n) The second end of -1).
第7圖的主下拉電路208及次下拉電路618可分別根據第二閘極訊號G(n+2)及第四閘極訊號G(n-2)下拉第一驅動訊號Q(n)、第一閘極訊號G(n)及感測訊號S(n),也就是可由第N+2級或由第N-2級移位暫存器的閘極訊號控制第N級移位暫存器的訊號輸出時間。當第7圖的驅動電路202將具有高電位的第一高頻時脈訊號HC1輸出為第一閘極訊號G(n),以及將具有高電位的第一高頻時脈訊號HC1輸出至第二電晶體T22的第二端以導通第五電晶體T11及第二十二電晶體T13時,具有高電位的第一閘極訊號G(n)可同時透過第五電晶體T11輸出第二驅動訊號Q(n+1)至第N+1級移位暫存器及透過 第二十二電晶體T13輸出第三驅動訊號Q(n-1)至第N-1級移位暫存器,所以第7圖的第N級移位暫存器700可同時驅動第N-1級及第N+1級移位暫存器。第N級移位暫存器700若配合適當的控制及時脈訊號,即可控制移位暫存器往上級或是往下級傳遞閘極訊號,達到雙向傳輸(Bi-directions)的功能。又因為第N級移位暫存器700的驅動電路202工作原理和第2圖相似,所以第N級移位暫存器700可同時輸出兩個脈寬不同的輸出訊號,即脈寬相異的感測訊號S(n)及第一閘極訊號G(n),應用於光感應觸控顯示面板。The main pull-down circuit 208 and the second pull-down circuit 618 of FIG. 7 can pull down the first driving signal Q(n) according to the second gate signal G(n+2) and the fourth gate signal G(n-2), respectively. a gate signal G(n) and a sensing signal S(n), that is, the Nth stage shift register can be controlled by the gate signal of the N+2 stage or the N-2 stage shift register Signal output time. When the driving circuit 202 of FIG. 7 outputs the first high frequency clock signal HC1 having a high potential as the first gate signal G(n), and outputs the first high frequency clock signal HC1 having a high potential to the first When the second end of the second transistor T22 turns on the fifth transistor T11 and the twelfth transistor T13, the first gate signal G(n) having a high potential can simultaneously output the second driver through the fifth transistor T11. Signal Q(n+1) to N+1th shift register and pass through The twelfth transistor T13 outputs the third driving signal Q(n-1) to the N-1th stage shift register, so the Nth stage shift register 700 of FIG. 7 can simultaneously drive the Nth- Level 1 and No. 1+1 shift register. The Nth stage shift register 700 can control the shift register to transfer the gate signal to the upper stage or the lower stage to achieve the bi-directions function if the appropriate timing signal is controlled. Moreover, since the driving principle of the driving circuit 202 of the Nth stage shift register 700 is similar to that of FIG. 2, the Nth stage shift register 700 can simultaneously output two output signals having different pulse widths, that is, the pulse widths are different. The sensing signal S(n) and the first gate signal G(n) are applied to the light sensing touch display panel.
使用第6圖的上拉電路610及第7圖的上拉電路710的效果差異在於當第二閘極訊號G(n+2)或第四閘極訊號G(n-2)下拉第一驅動訊號Q(n)時,上拉電路710的架構可降低第二驅動訊號Q(n+1)對第一驅動訊號Q(n)的耦合,減少對第一驅動訊號Q(n)波形的影響。The difference between the effect of using the pull-up circuit 610 of FIG. 6 and the pull-up circuit 710 of FIG. 7 is that when the second gate signal G(n+2) or the fourth gate signal G(n-2) pulls down the first driver When the signal Q(n) is used, the structure of the pull-up circuit 710 can reduce the coupling of the second driving signal Q(n+1) to the first driving signal Q(n), and reduce the influence on the waveform of the first driving signal Q(n). .
第8圖為本發明另一實施例第N級移位暫存器800的示意圖。第N級移位暫存器800的第一下拉電路204、第一下拉控制電路206、第二下拉電路212、第二下拉控制電路214及電容216的結構及工作原理和第2圖相似,不再贅述。第8圖的上拉電路810耦接於驅動電路802,用以根據第一驅動訊號Q(n),提供第二驅動訊號Q(n+1)至第N+1級移位暫存器的驅動電路。FIG. 8 is a schematic diagram of an Nth stage shift register 800 according to another embodiment of the present invention. The structure and working principle of the first pull-down circuit 204, the first pull-down control circuit 206, the second pull-down circuit 212, the second pull-down control circuit 214, and the capacitor 216 of the Nth stage shift register 800 are similar to those of FIG. ,No longer. The pull-up circuit 810 of FIG. 8 is coupled to the driving circuit 802 for providing the second driving signal Q(n+1) to the N+1th shift register according to the first driving signal Q(n). Drive circuit.
第8圖的驅動電路802和第2圖的驅動電路202類似,差別在於驅動電路802不包含第四電晶體T24,而是由第三電晶體T23的第 二端輸出感測訊號S(n),且第三電晶體T23的第一端用以接收直流高電位VGH。第8圖的主下拉電路808耦接於驅動電路802,第8圖的主下拉電路808與第2圖的主下拉電路208差別在於主下拉電路808的第七電晶體T41的控制端接收第二閘極訊號G(n+2),第六電晶體T31的控制端接收第五閘極訊號G(n+3)(可為來自第N+3級的閘極訊號),並分別根據第二閘極訊號G(n+2)下拉第一驅動訊號Q(n)及根據第五閘極訊號G(n+3)下拉感測訊號S(n)。上拉電路810包含第五電晶體T11,連接方式類似上拉電路202。The driving circuit 802 of FIG. 8 is similar to the driving circuit 202 of FIG. 2, except that the driving circuit 802 does not include the fourth transistor T24 but the third transistor T23. The two ends output the sensing signal S(n), and the first end of the third transistor T23 is used to receive the DC high potential VGH. The main pull-down circuit 808 of FIG. 8 is coupled to the driving circuit 802. The main pull-down circuit 808 of FIG. 8 is different from the main pull-down circuit 208 of FIG. 2 in that the control terminal of the seventh transistor T41 of the main pull-down circuit 808 receives the second. The gate signal G(n+2), the control end of the sixth transistor T31 receives the fifth gate signal G(n+3) (which may be the gate signal from the N+3 stage), and according to the second The gate signal G(n+2) pulls down the first driving signal Q(n) and pulls down the sensing signal S(n) according to the fifth gate signal G(n+3). The pull-up circuit 810 includes a fifth transistor T11 in a similar manner to the pull-up circuit 202.
第9圖為本發明另一實施例第N級移位暫存器900的示意圖。第N級移位暫存器900的第一下拉電路204、第一下拉控制電路206、第二下拉電路212、第二下拉控制電路214、上拉電路510及電容216的結構及工作原理和第5圖相似,不再贅述。FIG. 9 is a schematic diagram of an Nth stage shift register 900 according to another embodiment of the present invention. The structure and working principle of the first pull-down circuit 204, the first pull-down control circuit 206, the second pull-down circuit 212, the second pull-down control circuit 214, the pull-up circuit 510 and the capacitor 216 of the Nth stage shift register 900 Similar to Figure 5, no longer repeat them.
第9圖的驅動電路902和第5圖的驅動電路202類似,差別在於驅動電路902不包含第二電晶體T22及第四電晶體T24,而是由第三電晶體T23的第二端輸出感測訊號S(n),且第三電晶體T23的第一端用以接收直流高電位VGH。第9圖的主下拉電路908與第5圖的主下拉電路208差別在於主下拉電路908的第六電晶體T31及第七電晶體T41的控制端接收第五閘極訊號G(n+3),並根據第五閘極訊號G(n+3)下拉第一驅動訊號Q(n)及感測訊號S(n)。The driving circuit 902 of FIG. 9 is similar to the driving circuit 202 of FIG. 5, except that the driving circuit 902 does not include the second transistor T22 and the fourth transistor T24, but is outputted by the second end of the third transistor T23. The signal signal S(n), and the first end of the third transistor T23 is used to receive the DC high potential VGH. The main pull-down circuit 908 of FIG. 9 differs from the main pull-down circuit 208 of FIG. 5 in that the control terminals of the sixth transistor T31 and the seventh transistor T41 of the main pull-down circuit 908 receive the fifth gate signal G(n+3). And pulling down the first driving signal Q(n) and the sensing signal S(n) according to the fifth gate signal G(n+3).
第10圖為第8圖的第N級移位暫存器800的工作相關訊號波形 示意圖。第10圖原理與第3圖相似,以下僅就差異處說明。於T1時段,由於第三電晶體T23的第一端耦接到較穩定的直流高電位VGH,所以當第一驅動訊號Q(n)上昇至第一高電位VH1時,感測訊號S(n)可預先充電。因此當T2時段第一驅動訊號Q(n)由第一高電位VH1上拉至第二高電位VH2時,可確保感測訊號S(n)被上拉至較第3圖的第三高電位VH3更接近高直流高電位VGH的電位,且T3時段結束,第一驅動訊號Q(n)被下拉至低電位時,感測訊號S(n)不會隨著第一高頻時脈訊號HC1變化。又因為第N級移位暫存器800的第六電晶體T31是根據第五閘極訊號G(n+3)下拉感測訊號S(n),所以第10圖的感測訊號S(n)到T4時段結束後,第五閘極訊號G(n+3)上升至高電位才被下拉,具有較第3圖的感測訊號S(n)更長的脈波寬度。上述可以增加感測訊號S(n)的驅動能力,可應用於大尺寸的面板。Figure 10 is a diagram showing the operation related signal waveform of the Nth stage shift register 800 of Fig. 8. schematic diagram. The principle of Fig. 10 is similar to that of Fig. 3, and only the differences are explained below. During the period T1, since the first end of the third transistor T23 is coupled to the relatively stable DC high potential VGH, when the first driving signal Q(n) rises to the first high potential VH1, the sensing signal S(n) ) can be pre-charged. Therefore, when the first driving signal Q(n) is pulled up from the first high potential VH1 to the second high potential VH2 in the T2 period, the sensing signal S(n) is ensured to be pulled up to the third high potential of FIG. VH3 is closer to the potential of the high DC high potential VGH, and the T3 period ends. When the first driving signal Q(n) is pulled down to the low potential, the sensing signal S(n) does not follow the first high frequency clock signal HC1. Variety. Moreover, since the sixth transistor T31 of the Nth stage shift register 800 pulls down the sensing signal S(n) according to the fifth gate signal G(n+3), the sensing signal S(n) of FIG. 10 After the end of the T4 period, the fifth gate signal G(n+3) rises to a high level before being pulled down, and has a longer pulse width than the sensing signal S(n) of FIG. The above can increase the driving capability of the sensing signal S(n) and can be applied to a large-sized panel.
本發明實施例將可進行單向或雙向訊號傳遞的移位暫存器整合在光感應觸控面板的閘極驅動電路中,且第N級移位暫存器可產生兩個不同脈波寬度輸出訊號,用以提供光感應觸控顯示面板所需的訊號,不需要外接驅動晶片,因而可減少光感應觸控顯示面板的製造程序及提高積集度,減少工序並降低製作成本。In the embodiment of the invention, a shift register capable of transmitting one-way or two-way signals is integrated in a gate driving circuit of the light-sensitive touch panel, and the N-th shift register can generate two different pulse widths. The output signal is used to provide the signals required for the optically-sensitive touch display panel, and does not require an external drive chip, thereby reducing the manufacturing process of the light-sensitive touch display panel and improving the integration, reducing the number of processes and reducing the manufacturing cost.
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
100‧‧‧移位暫存器100‧‧‧Shift register
110‧‧‧畫素陣列110‧‧‧ pixel array
102‧‧‧第N-1級移位暫存器102‧‧‧N-1 stage shift register
104、200、500、600、700、800、 900‧‧‧第N級移位暫存器104, 200, 500, 600, 700, 800, 900‧‧‧Nth level shift register
106‧‧‧第N+1級移位暫存器106‧‧‧N+1 level shift register
202、802、902‧‧‧驅動電路202, 802, 902‧‧‧ drive circuit
204‧‧‧第一下拉電路204‧‧‧First pull-down circuit
206‧‧‧第一下拉控制電路206‧‧‧First pull-down control circuit
208、808、908‧‧‧主下拉電路208, 808, 908‧‧‧ main pull-down circuit
618‧‧‧次下拉電路618‧‧ ‧ pulldown circuit
210、510、610、710、810‧‧‧上拉電路210, 510, 610, 710, 810‧‧‧ pull-up circuits
212‧‧‧第二下拉電路212‧‧‧Second pull-down circuit
214‧‧‧第二下拉控制電路214‧‧‧Second pull-down control circuit
216‧‧‧電容216‧‧‧ Capacitance
Q(n)‧‧‧第一驅動訊號Q(n)‧‧‧First drive signal
Q(n+1)‧‧‧第二驅動訊號Q(n+1)‧‧‧second drive signal
Q(n-1)‧‧‧第三驅動訊號Q(n-1)‧‧‧third drive signal
G(n)‧‧‧第一閘極訊號G(n)‧‧‧ first gate signal
G(n+2)‧‧‧第二閘極訊號G(n+2)‧‧‧second gate signal
G(n-1)‧‧‧第三閘極訊號G(n-1)‧‧‧3rd gate signal
G(n-2)‧‧‧第四閘極訊號G(n-2)‧‧‧fourth gate signal
G(n+3)‧‧‧第五閘極訊號G(n+3)‧‧‧ fifth gate signal
S(n)‧‧‧感測訊號S(n)‧‧‧Sense signal
SG(n-1)‧‧‧第N-1級閘極訊號SG(n-1)‧‧‧N-1 level gate signal
SG(n)‧‧‧第N級閘極訊號SG(n)‧‧‧Nth level gate signal
SG(n+1)‧‧‧第N+1級閘極訊號SG(n+1)‧‧‧N+1 level gate signal
K(n)‧‧‧第一下拉控制訊號K(n)‧‧‧First pulldown control signal
P(n)‧‧‧第二下拉控制訊P(n)‧‧‧Second Pulldown Control
HC1‧‧‧第一高頻時脈訊號HC1‧‧‧ first high frequency clock signal
HC2‧‧‧第二高頻時脈訊號HC2‧‧‧Second high frequency clock signal
HC3‧‧‧第三高頻時脈訊號HC3‧‧‧ third high frequency clock signal
HC4‧‧‧第四高頻時脈訊號HC4‧‧‧ fourth high frequency clock signal
LC1‧‧‧第一低頻時脈訊號LC1‧‧‧ first low frequency clock signal
LC2‧‧‧第二低頻時脈訊號LC2‧‧‧ second low frequency clock signal
Sn_VSS‧‧‧第一低電位Sn_VSS‧‧‧ first low potential
Gn_VSS‧‧‧第二低電位Gn_VSS‧‧‧ second low potential
VH1‧‧‧第一高電位VH1‧‧‧ first high potential
VH2‧‧‧第二高電位VH2‧‧‧ second high potential
VH3‧‧‧第三高電位VH3‧‧‧ third high potential
VH4‧‧‧第四高電位VH4‧‧‧ fourth high potential
Cds‧‧‧寄生電容Cds‧‧‧ parasitic capacitance
CL‧‧‧負載電容CL‧‧‧ load capacitance
t‧‧‧時間軸T‧‧‧ timeline
T1、T2、T3、T4‧‧‧時段T1, T2, T3, T4‧‧‧
T11、T13、T21-T24、T31-T36、T41-T43、T45、T51-T54、T61-T64、T11N-1 ‧‧‧電晶體T11, T13, T21-T24, T31-T36, T41-T43, T45, T51-T54, T61-T64, T11 N-1 ‧‧‧O crystal
第1圖為顯示面板的移位暫存器及畫素陣列的示意圖。Figure 1 is a schematic diagram of a shift register and a pixel array of a display panel.
第2圖為本發明一實施例的第N級移位暫存器的示意圖。FIG. 2 is a schematic diagram of an Nth stage shift register according to an embodiment of the present invention.
第3圖為第2圖的第N級移位暫存器的工作相關訊號波形示意圖。Figure 3 is a schematic diagram showing the waveforms of the operation related signals of the Nth stage shift register of Fig. 2.
第4圖為第2圖的第N級移位暫存器的驅動電路包含第四電晶體的寄生電容及負載電容的示意圖。Fig. 4 is a schematic diagram showing the driving circuit of the Nth stage shift register of Fig. 2 including the parasitic capacitance and the load capacitance of the fourth transistor.
第5圖為本發明另一實施例第N級移位暫存器的示意圖。FIG. 5 is a schematic diagram of an Nth stage shift register according to another embodiment of the present invention.
第6圖為本發明另一實施例第N級移位暫存器的示意圖。FIG. 6 is a schematic diagram of an Nth stage shift register according to another embodiment of the present invention.
第7圖為本發明另一實施例第N級移位暫存器的示意圖。FIG. 7 is a schematic diagram of an Nth stage shift register according to another embodiment of the present invention.
第8圖為本發明另一實施例第N級移位暫存器的示意圖。FIG. 8 is a schematic diagram of an Nth stage shift register according to another embodiment of the present invention.
第9圖為本發明另一實施例第N級移位暫存器的示意圖。FIG. 9 is a schematic diagram of an Nth stage shift register according to another embodiment of the present invention.
第10圖為第8圖的第N級移位暫存器的工作相關訊號波形示意圖。Figure 10 is a schematic diagram showing the waveforms of the operation related signals of the Nth stage shift register of Fig. 8.
200‧‧‧第N級移位暫存器200‧‧‧N-level shift register
202‧‧‧驅動電路202‧‧‧ drive circuit
204‧‧‧第一下拉電路204‧‧‧First pull-down circuit
206‧‧‧第一下拉控制電路206‧‧‧First pull-down control circuit
208‧‧‧主下拉電路208‧‧‧Main pull-down circuit
210‧‧‧上拉電路210‧‧‧ Pull-up circuit
212‧‧‧第二下拉電路212‧‧‧Second pull-down circuit
214‧‧‧第二下拉控制電路214‧‧‧Second pull-down control circuit
216‧‧‧電容216‧‧‧ Capacitance
Q(n)‧‧‧第一驅動訊號Q(n)‧‧‧First drive signal
Q(n+1)‧‧‧第二驅動訊號Q(n+1)‧‧‧second drive signal
G(n)‧‧‧第一閘極訊號G(n)‧‧‧ first gate signal
G(n+2)‧‧‧第二閘極訊號G(n+2)‧‧‧second gate signal
G(n-1)‧‧‧第三閘極訊號G(n-1)‧‧‧3rd gate signal
S(n)‧‧‧感測訊號S(n)‧‧‧Sense signal
K(n)‧‧‧第一下拉控制訊號K(n)‧‧‧First pulldown control signal
P(n)‧‧‧第二下拉控制訊P(n)‧‧‧Second Pulldown Control
HC1‧‧‧高頻時脈訊號HC1‧‧‧ high frequency clock signal
LC1‧‧‧第一低頻時脈訊號LC1‧‧‧ first low frequency clock signal
LC2‧‧‧第二低頻時脈訊號LC2‧‧‧ second low frequency clock signal
Sn_VSS‧‧‧第一低電位Sn_VSS‧‧‧ first low potential
Gn_VSS‧‧‧第二低電位Gn_VSS‧‧‧ second low potential
T11、T21-T24、T31-T35、T41-T43、T51-T54、T61-T64、T11N-1 ‧‧‧電晶體T11, T21-T24, T31-T35, T41-T43, T51-T54, T61-T64, T11 N-1 ‧‧‧O crystal
Claims (22)
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TW101141706A TWI497377B (en) | 2012-07-18 | 2012-11-09 | Shift register for photo sensing touch panel |
CN201210484014.6A CN102982846B (en) | 2012-07-18 | 2012-11-23 | Shift register for light-induced touch panel |
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TWI473059B (en) * | 2013-05-28 | 2015-02-11 | Au Optronics Corp | Shift register circuit |
TWI514365B (en) * | 2014-04-10 | 2015-12-21 | Au Optronics Corp | Gate driving circuit and shift register |
KR102390982B1 (en) * | 2015-01-30 | 2022-04-28 | 엘지디스플레이 주식회사 | Display device, and driving device and method thereof |
TWI587190B (en) * | 2015-11-04 | 2017-06-11 | 友達光電股份有限公司 | Touch display apparatus and shift register thereof |
TWI680463B (en) * | 2019-02-12 | 2019-12-21 | 友達光電股份有限公司 | Shift register apparatus and display apparatus |
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TWI254592B (en) * | 2003-01-22 | 2006-05-01 | Toshiba Matsushita Display Tec | Organic EL display and active matrix substrate |
US20080246697A1 (en) * | 2007-04-06 | 2008-10-09 | Jongyun Kim | Organic light emitting display |
TW201106374A (en) * | 2009-08-12 | 2011-02-16 | Au Optronics Corp | Shift register circuit |
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TWI254592B (en) * | 2003-01-22 | 2006-05-01 | Toshiba Matsushita Display Tec | Organic EL display and active matrix substrate |
US20080246697A1 (en) * | 2007-04-06 | 2008-10-09 | Jongyun Kim | Organic light emitting display |
TW201106374A (en) * | 2009-08-12 | 2011-02-16 | Au Optronics Corp | Shift register circuit |
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