TWI495003B - - Google Patents

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Publication number
TWI495003B
TWI495003B TW101129366A TW101129366A TWI495003B TW I495003 B TWI495003 B TW I495003B TW 101129366 A TW101129366 A TW 101129366A TW 101129366 A TW101129366 A TW 101129366A TW I495003 B TWI495003 B TW I495003B
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TW
Taiwan
Application number
TW101129366A
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TW201316402A (zh
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Publication date
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Publication of TW201316402A publication Critical patent/TW201316402A/zh
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Publication of TWI495003B publication Critical patent/TWI495003B/zh

Links

TW101129366A 2011-09-05 2012-08-14 可調節等離子體濃度分佈的等離子處理裝置及其處理方法 TW201316402A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110259602.5A CN102983051B (zh) 2011-09-05 2011-09-05 可调节等离子体浓度分布的等离子处理装置及其处理方法

Publications (2)

Publication Number Publication Date
TW201316402A TW201316402A (zh) 2013-04-16
TWI495003B true TWI495003B (zh) 2015-08-01

Family

ID=47856943

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101129366A TW201316402A (zh) 2011-09-05 2012-08-14 可調節等離子體濃度分佈的等離子處理裝置及其處理方法

Country Status (2)

Country Link
CN (1) CN102983051B (zh)
TW (1) TW201316402A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227091B (zh) * 2013-04-19 2016-01-27 中微半导体设备(上海)有限公司 等离子体处理装置
CN108521707B (zh) * 2018-04-19 2020-05-26 哈尔滨工业大学 等离子体密度的两级调控方法及系统
CN113133175B (zh) * 2019-12-31 2024-02-09 中微半导体设备(上海)股份有限公司 等离子体电感线圈结构、等离子体处理设备以及处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312556B1 (en) * 1998-07-22 2001-11-06 Micron Technology, Inc. Beat frequency modulation for plasma generation
TW200608840A (en) * 2004-05-28 2006-03-01 Lam Res Corp Plasma processor with electrode responsive to multiple RF frequencies
CN201263183Y (zh) * 2008-06-27 2009-06-24 丹阳市新桥镇旭阳电器厂 一体化多路射频调制器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
CN100552883C (zh) * 2005-05-09 2009-10-21 应用材料股份有限公司 使用双频率射频源的等离子体产生与控制
US7884025B2 (en) * 2007-01-30 2011-02-08 Applied Materials, Inc. Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
CN101287327B (zh) * 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312556B1 (en) * 1998-07-22 2001-11-06 Micron Technology, Inc. Beat frequency modulation for plasma generation
TW200608840A (en) * 2004-05-28 2006-03-01 Lam Res Corp Plasma processor with electrode responsive to multiple RF frequencies
CN201263183Y (zh) * 2008-06-27 2009-06-24 丹阳市新桥镇旭阳电器厂 一体化多路射频调制器

Also Published As

Publication number Publication date
TW201316402A (zh) 2013-04-16
CN102983051A (zh) 2013-03-20
CN102983051B (zh) 2015-06-24

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