TWI493202B - Chip testing structure, device and method - Google Patents

Chip testing structure, device and method Download PDF

Info

Publication number
TWI493202B
TWI493202B TW101146798A TW101146798A TWI493202B TW I493202 B TWI493202 B TW I493202B TW 101146798 A TW101146798 A TW 101146798A TW 101146798 A TW101146798 A TW 101146798A TW I493202 B TWI493202 B TW I493202B
Authority
TW
Taiwan
Prior art keywords
wafer
test
wafers
electrical connector
carrier
Prior art date
Application number
TW101146798A
Other languages
Chinese (zh)
Other versions
TW201423126A (en
Inventor
Chin Yang Lin
Original Assignee
Fugu Tech Entpr Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fugu Tech Entpr Co Ltd filed Critical Fugu Tech Entpr Co Ltd
Priority to TW101146798A priority Critical patent/TWI493202B/en
Publication of TW201423126A publication Critical patent/TW201423126A/en
Application granted granted Critical
Publication of TWI493202B publication Critical patent/TWI493202B/en

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

晶片測試結構、裝置及方法Wafer test structure, device and method

本發明係關於一種測試結構、裝置及方法,特別關於一種晶片測試結構、裝置及方法。The present invention relates to a test structure, apparatus and method, and more particularly to a wafer test structure, apparatus and method.

近年來由於晶片製程技術的提升,有效地增加了生產的速度,大量的晶片快速地被製造出來,如果沒有測試流程將不良的晶片篩選,會為應用面帶來極大的不便,而伴隨著生產加速而有必要同步演進的測試技術,成了目前晶片製造廠最渴望精進的課題。In recent years, due to the improvement of wafer processing technology, the speed of production has been effectively increased, and a large number of wafers have been rapidly manufactured. If there is no test process to screen defective wafers, it will bring great inconvenience to the application surface, accompanied by production. Accelerated and necessary evolutionary test technology has become the most desired task for wafer manufacturers.

晶片生產雖然依照標準流程進行,一切由機械化處理,但是並不能保證生產出來的晶片百分之百的品質,必定會有一定比率的不良品,該些不良品如果流入市面或是安裝到高精度的儀器上,將會造成使用者極大的不便;因此,有必要對生產出來的晶片做品質測試,將不良品篩選出來;如果測試流程的速度可以有效提升,更可以加快銷售的速度,進一步增進以晶片製作儀器的速度。Although the wafer production is carried out according to the standard process, everything is mechanized, but the 100% quality of the produced wafers cannot be guaranteed. There must be a certain percentage of defective products. If the defective products flow into the market or are mounted on high-precision instruments. This will cause great inconvenience to the user; therefore, it is necessary to perform quality testing on the produced wafers to screen out defective products; if the speed of the testing process can be effectively improved, the sales speed can be accelerated, and the wafer production can be further enhanced. The speed of the instrument.

晶片測試的方式是將電訊號輸送至待測晶片裡,再讓訊號由晶片回傳給測試系統,讓系統辨認訊號的完整性,藉此評斷晶片的良劣與否。The wafer test method is to transfer the electrical signal to the wafer to be tested, and then pass the signal back to the test system, so that the system can recognize the integrity of the signal, thereby judging whether the wafer is good or bad.

然而,習知之測試系統僅一次對一個晶片做測試。若有多個待測晶片時,測試系統需依序地對該些待測晶片進行測試,並無法同時測試該些晶片;因此,該些待測晶片皆測試完將會耗費大量之時間。再者,該些晶片測試完後,必需將該些晶片從測試系統取出後,才能讓下一批待測晶片裝放置於該測試系統中來進行測試;換言之,下一批之待測晶片無法短時間內就放置於測試系統中進行測試,而是需等到前一批晶片從測試系統取出後。總結地說,習知之晶片測試系統在測試多個或多批晶片時,測試效率並不佳。However, conventional test systems test only one wafer at a time. If there are multiple wafers to be tested, the test system needs to test the wafers to be tested in sequence, and the wafers cannot be tested at the same time; therefore, it takes a lot of time for the wafers to be tested to be tested. Furthermore, after the wafers are tested, the wafers must be removed from the test system before the next batch of wafers to be tested can be placed in the test system for testing; in other words, the next batch of wafers to be tested cannot be tested. It is placed in the test system for testing in a short time, but it is necessary to wait until the previous batch of wafers are taken out of the test system. In summary, the conventional wafer test system is not efficient in testing multiple or multiple batches of wafers.

有鑑於此,提供一種可改善上述缺失的晶片測試結構、裝置或方法,乃為業界亟待解決的問題。In view of the above, it is an urgent problem to be solved in the industry to provide a wafer test structure, apparatus or method which can improve the above-mentioned defects.

本發明之一目的在於提供一種晶片測試結構、裝置及方法,其可改善多個或多批晶片的測試效率。It is an object of the present invention to provide a wafer test structure, apparatus and method that can improve the test efficiency of multiple or multiple batches of wafers.

為達上述目的,本發明所揭露的晶片測試結構,包含一測試元件、一承載元件及多個晶片。測試元件具有一第一基板、至少一第一電連接器及一測試模組,測試模組及第一電連接器皆設置於第一基板上,且第一電連接器電性連接測試模組;承載元件具有一第二基板、至少一第二電連接器及多個晶片承載座,晶片承載座及第二電連接器皆設置於該第二基板上,且第二電連接器電性連接該些晶片承載座;晶片分別可分離地設置於晶片承載座上;第一電連接器及第二電連接器相電性連接,以使該測試模組得以檢測該些晶片承載座上的該些晶片。To achieve the above objective, the wafer test structure disclosed in the present invention comprises a test component, a carrier component and a plurality of wafers. The test component has a first substrate, at least one first electrical connector, and a test module. The test module and the first electrical connector are disposed on the first substrate, and the first electrical connector is electrically connected to the test module. The carrier component has a second substrate, at least one second electrical connector, and a plurality of wafer carriers. The wafer carrier and the second electrical connector are disposed on the second substrate, and the second electrical connector is electrically connected. The wafer carriers are detachably disposed on the wafer carrier; the first electrical connector and the second electrical connector are electrically connected to enable the test module to detect the wafer carrier Some wafers.

為達上述目的,本發明所揭露的晶片測試裝置,包含:一外殼,具有一第一基座及一第二基座,該第一基座及該第二基座各別具有多個軌道,該第一基座及該第二基座為相並排;以及至少一上述之晶片測試結構,該晶片測試結構之該測試元件設置於該第一基座的該些軌道的其中一個上,該承載元件設置於該第二基座的該些軌道的其中一個上。In order to achieve the above object, a wafer testing apparatus according to the present invention includes: a housing having a first base and a second base, the first base and the second base each having a plurality of tracks. The first pedestal and the second pedestal are side by side; and at least one of the above wafer testing structures, wherein the test component of the wafer testing structure is disposed on one of the tracks of the first pedestal, the bearing The component is disposed on one of the tracks of the second base.

為達上述目的,本發明所揭露的晶片測試方法,包含:將多個晶片分別設置於一承載元件的多個晶片承載座上;將該承載元件電性連接一測試元件,使得該測試元件的一測試模組電性連接該些晶片承載座及該些晶片;以及使該測試模組檢測該些晶片承載座上的該些晶片。In order to achieve the above objective, the wafer testing method disclosed in the present invention comprises: disposing a plurality of wafers on a plurality of wafer carriers of a carrier member; electrically connecting the carrier components to a test component, such that the test components are a test module electrically connecting the wafer carriers and the wafers; and causing the test module to detect the wafers on the wafer carriers.

為讓上述目的、技術特徵及優點能更明顯易懂,下文係以較佳之實施例配合所附圖式進行詳細說明。The above objects, technical features and advantages will be more apparent from the following description.

以下將透過數個實施例來解釋本發明內容,然而,關於實施例中之說明僅為闡釋本發明之技術內容及其目的功效,而非用以直接限制本發明。須說明者,以下實施例以及圖示中,與本發明非直接相關之元件已省略而未繪示;且圖示中各元件之數量、尺寸及相對位置關係僅用以示意俾便瞭解,非用以限制實施之元件數量、比例及尺寸大小。The present invention will be explained by the following examples, but the description of the embodiments is merely illustrative of the technical contents of the present invention and the purpose thereof, and is not intended to limit the present invention. It should be noted that in the following embodiments and the drawings, elements that are not directly related to the present invention have been omitted and are not shown; and the number, size, and relative positional relationship of the elements in the drawings are only used for illustration and understanding. Used to limit the number, proportion and size of components implemented.

請參閱第1圖及第2圖所示,分別為依據本發明之第一實施例之晶片測試結構之整體示意圖及晶片示意圖。於本發明之第一實施例中,一晶片測試結構1被提出,其包含:一測試元件10、一承載元件20及多個晶片30;各元件之技術內容依序說明如下。Please refer to FIG. 1 and FIG. 2, which are respectively a schematic diagram of the wafer test structure and a schematic view of the wafer according to the first embodiment of the present invention. In the first embodiment of the present invention, a wafer test structure 1 is proposed, which comprises: a test component 10, a carrier component 20 and a plurality of wafers 30; the technical contents of each component are described below.

測試元件10具有一第一基板11、至少一第一電連接器12及一測試模組13。第一基板11用以承載其他物體(例如第一電連接器12及測試模組13),且能為該些物體之間提供電流傳遞媒介,因此第一基板11可為一印刷電路板或金屬電路板等具有類似功能之元件。The test component 10 has a first substrate 11 , at least one first electrical connector 12 , and a test module 13 . The first substrate 11 is used to carry other objects (for example, the first electrical connector 12 and the test module 13), and can provide a current transfer medium between the objects, so the first substrate 11 can be a printed circuit board or a metal. A circuit board or the like having similar functions.

至少第一電連接器12用以與後述之第二電連接器22相插接(或是與第3圖所示的第二實施例中的連接件40相插接),以使測試元件10所產生之測試訊號或資料可傳遞至承載元件20;至少一第一電連接器12意指第一電連接器12的數目可為一個或多個,而本實施例中,第一電連接器12之數目係以三個為例。At least the first electrical connector 12 is inserted into the second electrical connector 22, which will be described later (or is connected to the connector 40 in the second embodiment shown in FIG. 3), so that the test component 10 is The generated test signal or data can be transmitted to the carrier component 20; the at least one first electrical connector 12 means that the number of the first electrical connectors 12 can be one or more, and in this embodiment, the first electrical connector The number of 12 is exemplified by three.

測試模組13可提供用以測試晶片的測試訊號或資料,並可讀取及分析該些測試訊號或資料,以判斷該些待測晶片之性能正常與否。測試模組13可由數個電子元件(電子、電容或電感)及晶片等組成,且不同類型之晶片會由不同功能之測試模組13來測試。測試模組13及第一電連接器12皆設置於第一基板11上,且第一電連接器12電性連接測試模組13;第一電連接器12還可位於第一基板11的邊緣處,以便於與第二電連接器22插接。The test module 13 can provide test signals or data for testing the wafer, and can read and analyze the test signals or data to determine whether the performance of the test wafers is normal or not. The test module 13 can be composed of several electronic components (electronics, capacitors or inductors) and wafers, and different types of wafers are tested by test modules 13 of different functions. The test module 13 and the first electrical connector 12 are both disposed on the first substrate 11 , and the first electrical connector 12 is electrically connected to the test module 13 ; the first electrical connector 12 can also be located at the edge of the first substrate 11 . So as to be plugged into the second electrical connector 22.

承載元件20具有一第二基板21、至少一第二電連接器22、多個晶片承載座23及一把手24。第二基板21之功用類似第一基板11,可承載物體(例如第二電連接器22及晶片承載座23)且能為該些物體之間提供電流傳遞媒介。The carrier component 20 has a second substrate 21, at least one second electrical connector 22, a plurality of wafer carriers 23, and a handle 24. The second substrate 21 functions like the first substrate 11, and can carry objects (such as the second electrical connector 22 and the wafer carrier 23) and can provide a current transfer medium between the objects.

至少一第二電連接器22設置於第二基板21上,且可位於第二基板21的邊緣處,以便於與第一電連接器12插接(或是與第3圖所示的第二實施例中的連接件40相插接)。此外,第一電連接器12及第二電連接器22為相面對,且第一電連接器12及第二電連接器22在互相插接後,可相電性連接。第二電連接器22之數目及規格,可分別對應第一電連接器12之數目及規格,故第二電連接器22之數目也以三個為例。The at least one second electrical connector 22 is disposed on the second substrate 21 and may be located at an edge of the second substrate 21 so as to be plugged into the first electrical connector 12 (or the second shown in FIG. 3). The connector 40 in the embodiment is plugged in). In addition, the first electrical connector 12 and the second electrical connector 22 are facing each other, and the first electrical connector 12 and the second electrical connector 22 are electrically connected after being inserted into each other. The number and specifications of the second electrical connectors 22 can correspond to the number and specifications of the first electrical connectors 12, respectively. Therefore, the number of the second electrical connectors 22 is also exemplified by three.

該些晶片承載座23設置於第二基板21上,且與第二電連接器22電性連接。晶片承載座23用以承載及電性連接晶片30,故晶片承載座23具有插孔或是連接墊,以供晶片30之引腳或連接墊連接。The chip carriers 23 are disposed on the second substrate 21 and electrically connected to the second electrical connector 22 . The wafer carrier 23 is used to carry and electrically connect the wafer 30. Therefore, the wafer carrier 23 has a socket or a connection pad for connecting the pins or connection pads of the wafer 30.

把手24可設置於第二基板21上,並且把手24位於相對於第二電連接器22之另一邊緣處;換言之,晶片承載座23位於把手24及第二電連接器22之間。把手24可方便使用者對承載元件20施展推拉動作,使得使用者方便將承載元件20之第二電連接器22插入測試元件10之第一電連接器12中,或從第一電連接器12中拔除。The handle 24 can be disposed on the second substrate 21 and the handle 24 is located at the other edge relative to the second electrical connector 22; in other words, the wafer carrier 23 is located between the handle 24 and the second electrical connector 22. The handle 24 facilitates the user to push and pull the carrier member 20 so that the user can conveniently insert the second electrical connector 22 of the carrier member 20 into the first electrical connector 12 of the test component 10, or from the first electrical connector 12. Pulled out.

需說明的是,若承載元件20具有其他元件或特徵便於使用者對其施展推拉動作時,則把手24可從承載元件20中省略設置。It should be noted that the handle 24 can be omitted from the carrier member 20 if the carrier member 20 has other components or features that facilitate the user to push and pull it.

該些晶片30分別可分離地設置在該些晶片承載座23上,也就是,該些晶片30在設置於該些晶片承載座23後,仍可從晶片承載座23分離。該些晶片30可為同一類型或不同類型晶片,而本實施例中,該些晶片30較佳地為同類型晶片,且皆為記憶體晶片。The wafers 30 are separately detachably disposed on the wafer carriers 23, that is, the wafers 30 are still detachable from the wafer carrier 23 after being disposed on the wafer carriers 23. The wafers 30 may be the same type or different types of wafers. In this embodiment, the wafers 30 are preferably the same type of wafers, and are all memory chips.

以上為晶片測試結構1的各元件之技術內容之說明。該晶片測試結構1與習知的測試結構(圖未示)相比,晶片測試結構1可在較短時間內對多個晶片30進行測試,原因為:晶片測試結構1的承載元件20可同時承載多個晶片30,而非僅單個晶片,故後一個晶片30不需等到前一個晶片30從承載元件20中移除後才可設置於承載元件20中;並且,測試模組13可依序或同時地檢測設置於承載元件20中的多個晶片30;因此,該些晶片30等待測試的時間可減少。The above is a description of the technical contents of the components of the wafer test structure 1. The wafer test structure 1 can test a plurality of wafers 30 in a shorter time than the conventional test structure (not shown) because the carrier member 20 of the wafer test structure 1 can simultaneously Carrying a plurality of wafers 30 instead of only a single wafer, so that the latter wafer 30 can be disposed in the carrier member 20 without waiting for the previous wafer 30 to be removed from the carrier member 20; and, the test module 13 can be sequentially The plurality of wafers 30 disposed in the carrier member 20 are simultaneously or simultaneously detected; therefore, the time for the wafers 30 to wait for the test can be reduced.

此外,晶片測試結構1還可在較短時間內對多批晶片30進行測試,原因為:當有多批晶片30待測試時,每一批晶片30可預先承載至不同的承載元件20上;接著,其中一個承載元件20先與測試元件10相電性連接,以使承載元件20上的晶片30(即第一批晶片)被測試元件10測試;當第一批晶片30測試完成後,該承載元件20與測試元件10相分離,然後下一個承載元件20可立即連接測試元件10;如此,下一批晶片30可短時間內被測試元件10測試,不需等到前一批晶片30從承載元件20中分離開。In addition, the wafer test structure 1 can also test a plurality of batches of wafers 30 in a relatively short time because each batch of wafers 30 can be pre-loaded onto different carrier elements 20 when there are multiple batches of wafers 30 to be tested; Next, one of the carrier elements 20 is first electrically connected to the test component 10 such that the wafer 30 on the carrier component 20 (ie, the first batch of wafers) is tested by the test component 10; when the first batch of wafers 30 is tested, The carrier element 20 is separated from the test element 10, and then the next carrier element 20 can be immediately connected to the test element 10; thus, the next batch of wafers 30 can be tested by the test element 10 in a short time without waiting for the previous batch of wafers 30 to be loaded. The element 20 is separated.

請參閱第3圖所示,為依據本發明之第二實施例之晶片測試結構之整體示意圖。於本發明之第二實施例中,另一種晶片測試結構2被提出,其與晶片測試結構1相似,而兩者差異在於:晶片測試結構1的第一電連接器12是直接地結合第二電連接器22,而晶片測試結構2的第一電連接器12與第二電連接器22係相分隔,然後透過一連接件40來使第一電連接器12與第二電連接器22相互電性連接。Please refer to FIG. 3, which is an overall schematic view of a wafer test structure according to a second embodiment of the present invention. In a second embodiment of the invention, another wafer test structure 2 is proposed which is similar to the wafer test structure 1 except that the first electrical connector 12 of the wafer test structure 1 is directly coupled to the second The second connector 12 of the wafer test structure 2 is separated from the second electrical connector 22, and then the first electrical connector 12 and the second electrical connector 22 are mutually connected through a connector 40. Electrical connection.

詳言之,連接件40可為一印刷電路板、軟性電路板等可傳遞訊號之元件,而連接件40的兩側可具有電連接器(圖未示),以使連接件40的兩側可分別電性連接第一電連接器12及第二電連接器22。連接件40可讓第一基板11和第二基板21之間增加一距離,以使第一基板11與第二基板21可位於相分隔之兩空間中。In detail, the connecting member 40 can be a component for transmitting signals such as a printed circuit board or a flexible circuit board, and the two sides of the connecting member 40 can have electrical connectors (not shown) so that both sides of the connecting member 40 are provided. The first electrical connector 12 and the second electrical connector 22 can be electrically connected, respectively. The connecting member 40 can increase a distance between the first substrate 11 and the second substrate 21 so that the first substrate 11 and the second substrate 21 can be located in two spaced spaces.

請參閱第4圖所示,為依據本發明之第三實施例之晶片測試裝置之整體示意圖。於第三實施例中,一晶片測試裝置3被提出,該晶片測試裝置3可包含一外殼50及至少一晶片測試結構。Please refer to FIG. 4, which is a schematic overall view of a wafer testing apparatus according to a third embodiment of the present invention. In a third embodiment, a wafer testing device 3 is proposed. The wafer testing device 3 can include a housing 50 and at least one wafer testing structure.

該外殼50可具有一第一基座51、一第二基座52。請參考第5圖所示,該第一基座51具有多個垂直排列的軌道511,該第二基座52也具有多個垂直排列的軌道521,該些軌道511及軌道521的數量可為相同;此外,第一基座51及第二基座52相並排,且第一基座51及第二基座52之間可相互間隔。The housing 50 can have a first base 51 and a second base 52. Referring to FIG. 5, the first base 51 has a plurality of vertically aligned rails 511. The second base 52 also has a plurality of vertically aligned rails 521. The number of the rails 511 and the rails 521 may be The first base 51 and the second base 52 are arranged side by side, and the first base 51 and the second base 52 are spaced apart from each other.

至少一晶片測試結構可為第一或第二實施例所述的晶片測試結構1或2,而第三實施係以晶片測試結構2為例。晶片測試結構2的測試元件10可設置於第一基座51的該些軌道511的其中一個上,晶片測試結構2之承載元件20可設置於第二基座52的該些軌道521的其中一個上,而連接件40位於第一基座51及第二基座52之間。The at least one wafer test structure may be the wafer test structure 1 or 2 described in the first or second embodiment, and the third embodiment is exemplified by the wafer test structure 2. The test component 10 of the wafer test structure 2 may be disposed on one of the tracks 511 of the first pedestal 51, and the carrier component 20 of the wafer test structure 2 may be disposed on one of the tracks 521 of the second pedestal 52. The connector 40 is located between the first base 51 and the second base 52.

承載元件20較佳地可在軌道521上滑動;若朝向測試元件10滑動時,承載元件20可與測試元件10相連接;若遠離測試元件10滑動時,承載元件20可與測試元件10相分離,並進一步脫離第二基座52。The carrier element 20 is preferably slidable on the track 521; the carrier element 20 can be coupled to the test element 10 when sliding toward the test element 10; the carrier element 20 can be separated from the test element 10 when sliding away from the test element 10 And further away from the second base 52.

請配合參閱第6圖所示,晶片測試裝置3較佳地可包含多個晶片測試結構(以兩個晶片測試結構為例示,其餘晶片測試結構未顯示),此時該些測試元件10各別設置於第一基座51的其中一個軌道511上,而該些承載元件20各別設置於第二基座51的其中一個軌道521上;因此,若軌道511及521的數量越多時,晶片測試裝置3可包含越多的晶片測試結構,使得晶片測試裝置3可同時測試越多個或越多批晶片30。Referring to FIG. 6, the wafer testing device 3 preferably includes a plurality of wafer testing structures (exemplified by two wafer testing structures, and the remaining wafer testing structures are not shown), and the test components 10 are different at this time. The carrier elements 20 are disposed on one of the tracks 521 of the second base 51; therefore, if the number of the tracks 511 and 521 is larger, the wafer The more wafer test structures the test apparatus 3 can include, such that the wafer test apparatus 3 can simultaneously test more or more batches of wafers 30.

當晶片測試結構的數量越多時,僅外殼50的高度會增加,而外殼50的寬度或長度不會增加;換言之,縱使晶片測試結構的數量增加,晶片測試裝置3的外殼50所佔據的面積不會因應地增加。When the number of wafer test structures is increased, only the height of the outer casing 50 is increased, and the width or length of the outer casing 50 is not increased; in other words, the area occupied by the outer casing 50 of the wafer testing device 3, even as the number of wafer test structures is increased. Will not increase in response to the situation.

請復參閱第4圖,晶片測試裝置3較佳地可包含一加熱器60,該加熱器60可連接外殼50,並可提供熱能至第二基座52中,以使第二基座52中的承載元件20上的晶片(圖未示)的溫度上昇。晶片的溫度上昇後,晶片將會老化,以使得晶片可能存在的缺陷可提早顯現。Referring to FIG. 4, the wafer testing device 3 preferably includes a heater 60 that can be coupled to the housing 50 and that provides thermal energy to the second pedestal 52 such that the second pedestal 52 is The temperature of the wafer (not shown) on the carrier element 20 rises. After the temperature of the wafer rises, the wafer will age so that defects that may exist in the wafer can appear early.

在加熱器60提供熱能至第二基座52中的同時,測試元件10可對老化的晶片進行測試,以將具有缺陷的晶片識別出。由於「晶片的老化」及「晶片的測試」可同時間進行,故兩者的整體耗費時間可縮短。While the heater 60 provides thermal energy into the second pedestal 52, the test component 10 can test the aged wafer to identify the defective wafer. Since "aging of the wafer" and "testing of the wafer" can be performed simultaneously, the overall time taken for both can be shortened.

請繼續參閱第4圖,晶片測試裝置3的外殼50較佳地更可具有一隔板53,該隔板53設置於第一基座51及第二基座52之間,以使第一基座51及第二基座52分別位於兩相隔離的空間中。如此,加熱器60提供至第二基座52的熱能較不會傳遞到第一基座51中,使得第二基座52中的晶片的溫度可較為快速地上昇至預定值,也使得加熱器60的熱能不會影響測試元件10的運作。Continuing to refer to FIG. 4, the outer casing 50 of the wafer testing device 3 preferably further has a partition 53 disposed between the first base 51 and the second base 52 to enable the first base. The seat 51 and the second base 52 are respectively located in the two-phase isolated space. As such, the thermal energy provided by the heater 60 to the second pedestal 52 is less transferred to the first pedestal 51, so that the temperature of the wafer in the second pedestal 52 can rise to a predetermined value relatively quickly, also making the heater The thermal energy of 60 does not affect the operation of test component 10.

請參閱第7圖所示,為依據本發明之第四實施例之晶片測試方法之流程圖。於第四實施例中,一晶片測試方法被提出,該晶片測試方法可做為前述實施例的晶片測試結構1及2或晶片測試裝置3的操作方法,但不限定僅用於此。Please refer to FIG. 7, which is a flow chart of a wafer testing method according to a fourth embodiment of the present invention. In the fourth embodiment, a wafer test method is proposed, which can be used as the operation method of the wafer test structures 1 and 2 or the wafer test device 3 of the foregoing embodiment, but is not limited thereto.

如步驟S701所示,晶片測試方法首先係將多個晶片30分別設置於承載元件20的多個晶片承載座23上,而設置方式可為操作者徒手或是機器手臂將晶片30安插於晶片承載座23上。接著,如步驟S703所示,將承載元件20電性連接一測試元件10,使得測試元件10的測試模組13電性連接該些晶片承載座23及該些晶片30。然後,如步驟S705所示,使測試模組13開始檢測該些晶片承載座23上的該些晶片30。As shown in step S701, the wafer testing method firstly places a plurality of wafers 30 on the plurality of wafer carriers 23 of the carrier member 20, and the arrangement may be performed by the operator or the robot arm to insert the wafer 30 on the wafer carrier. On the seat 23. Then, as shown in step S703, the carrier component 20 is electrically connected to the test component 10 such that the test module 13 of the test component 10 is electrically connected to the wafer carrier 23 and the wafers 30. Then, as shown in step S705, the test module 13 is caused to start detecting the wafers 30 on the wafer carriers 23.

測試模組13檢測晶片30的方式有多種,可依據晶片30的種類來決定。本實施例中,晶片30係為記憶體晶片,故測試模組13可採以下方式來檢測晶片30:首先,測試模組13對該些晶片30一次寫入測試資料,而不是依序對該些晶片30寫入測試資料,藉此節省整體寫入時間;然後,測試模組13再依序讀取該些晶片30的測試資料,以分析寫入至晶片30內的測試資料是否遺失或更動,從而判斷晶片30是否有異常。There are various ways in which the test module 13 detects the wafer 30, which can be determined depending on the type of the wafer 30. In this embodiment, the wafer 30 is a memory chip, so the test module 13 can detect the wafer 30 in the following manner: First, the test module 13 writes test data to the wafers 30 at a time instead of sequentially The chips 30 write test data, thereby saving the overall writing time; then, the test module 13 sequentially reads the test data of the wafers 30 to analyze whether the test data written into the wafer 30 is lost or moved. Therefore, it is judged whether or not the wafer 30 is abnormal.

在步驟S705執行的同時,晶片測試方法可選擇地執行步驟S707,也就是在測試模組13檢測該些晶片30的過程,提供熱能至承載元件20,使得該些晶片30的溫度提高。如此,「晶片的老化」及「晶片的測試」可同時進行,以節省兩步驟所花費的整體時間。Simultaneously with the execution of step S705, the wafer testing method optionally performs step S707, that is, the process of detecting the wafers 30 by the test module 13, providing thermal energy to the carrier member 20 such that the temperatures of the wafers 30 are increased. In this way, "aging of the wafer" and "testing of the wafer" can be performed simultaneously, thereby saving the overall time taken for the two steps.

綜合上述,本發明的晶片測試結構、裝置及方法可讓多個晶片或多批晶片的測試時間縮短,進而增加測試率。此外,晶片測試裝置可僅佔據一定的面積,然後測試多個晶片或多批晶片。In summary, the wafer test structure, apparatus and method of the present invention can reduce the test time of a plurality of wafers or a plurality of batches of wafers, thereby increasing the test rate. In addition, the wafer test apparatus can occupy only a certain area and then test a plurality of wafers or a plurality of batches of wafers.

上述之實施例僅用來例舉本發明之實施態樣,以及闡釋本發明之技術特徵,並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利保護範圍應以申請專利範圍為準。The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

1、2...晶片測試結構1, 2. . . Wafer test structure

3...晶片測試裝置3. . . Wafer test device

10...測試元件10. . . Test component

11...第一基板11. . . First substrate

12...第一電連接器12. . . First electrical connector

13...測試模組13. . . Test module

20...承載元件20. . . Carrier element

21...第二基板twenty one. . . Second substrate

22...第二電連接器twenty two. . . Second electrical connector

23...晶片承載座twenty three. . . Wafer carrier

24...把手twenty four. . . handle

30...晶片30. . . Wafer

40...連結件40. . . Link

50...外殼50. . . shell

51...第一基座51. . . First base

511...軌道511. . . track

52...第二基座52. . . Second base

521...軌道521. . . track

53...隔板53. . . Partition

60...加熱器60. . . Heater

第1圖為依據本發明之第一實施例之晶片測試結構之示意圖。Figure 1 is a schematic illustration of a wafer test structure in accordance with a first embodiment of the present invention.

第2圖為第1圖之晶片測試結構之晶片及晶片承載座之示意圖。Figure 2 is a schematic diagram of the wafer and wafer carrier of the wafer test structure of Figure 1.

第3圖為依據本發明之第二實施例之晶片測試結構之示意圖。Figure 3 is a schematic illustration of a wafer test structure in accordance with a second embodiment of the present invention.

第4圖為依據本發明之第三實施例之晶片測試裝置之示意圖。Figure 4 is a schematic view of a wafer testing apparatus in accordance with a third embodiment of the present invention.

第5圖為第4圖之晶片測試裝置之基座之示意圖。Figure 5 is a schematic view of the susceptor of the wafer testing apparatus of Figure 4.

第6圖為第4圖之晶片測試裝置之測試結構與外殼之示意圖。Figure 6 is a schematic view showing the test structure and the outer casing of the wafer test apparatus of Figure 4.

第7圖為依據本發明之第四實施例之晶片測試方法之流程圖。Figure 7 is a flow chart showing a wafer testing method in accordance with a fourth embodiment of the present invention.

1...晶片測試結構1. . . Wafer test structure

10...測試元件10. . . Test component

11...第一基板11. . . First substrate

12...第一電連接器12. . . First electrical connector

13...測試模組13. . . Test module

20...承載元件20. . . Carrier element

21...第二基板twenty one. . . Second substrate

22...第二電連接器twenty two. . . Second electrical connector

23...晶片承載座twenty three. . . Wafer carrier

24...把手twenty four. . . handle

Claims (12)

一種晶片測試結構,包含:一測試元件,具有一第一基板、至少一第一電連接器及一測試模組,該測試模組及該至少一第一電連接器皆設置於該第一基板上,且該至少一第一電連接器電性連接該測試模組;一承載元件,具有一第二基板、至少一第二電連接器及多個晶片承載座,該些晶片承載座及該至少一第二電連接器皆設置於該第二基板上,且該至少一第二電連接器電性連接該些晶片承載座;以及多個晶片,分別可分離地設置於該些晶片承載座上;其中,該至少一第一電連接器及該至少一第二電連接器為相面對,以使該測試元件及該承載元件可分離地相連接,且該至少一第一電連接器及該至少一第二電連接器相電性連接,以使該測試模組得以檢測該些晶片承載座上的該些晶片。 A wafer test structure includes: a test component having a first substrate, at least one first electrical connector, and a test module, wherein the test module and the at least one first electrical connector are disposed on the first substrate And the at least one first electrical connector is electrically connected to the test module; a carrier component having a second substrate, at least one second electrical connector, and a plurality of wafer carriers, the wafer carrier and the The at least one second electrical connector is disposed on the second substrate, and the at least one second electrical connector is electrically connected to the chip carriers; and the plurality of wafers are separately detachably disposed on the wafer carriers The at least one first electrical connector and the at least one second electrical connector are facing each other such that the test component and the carrier component are detachably connected, and the at least one first electrical connector And electrically connecting the at least one second electrical connector to enable the test module to detect the wafers on the wafer carriers. 如請求項1所述之晶片測試結構,其中該承載元件具有一把手,該把手設置於該第二基板上,且該些晶片承載座位於該把手及該至少一第二電連接器之間。 The wafer test structure of claim 1, wherein the carrier member has a handle, the handle is disposed on the second substrate, and the wafer carrier is located between the handle and the at least one second electrical connector. 如請求項1所述之晶片測試結構,更包含一連接件,該連接件的兩側分別電性連接該第一電連接器及該第二電連接器。 The wafer test structure of claim 1 further includes a connector, and the two sides of the connector are electrically connected to the first electrical connector and the second electrical connector, respectively. 如請求項1所述之晶片測試結構,其中該第一電連接器直接地結合該第二電連接器。 The wafer test structure of claim 1 wherein the first electrical connector directly incorporates the second electrical connector. 如請求項1所述之晶片測試結構,其中該些晶片皆為同一類型之晶片。 The wafer test structure of claim 1, wherein the wafers are all wafers of the same type. 如請求項1所述之晶片測試結構,其中該些晶片皆為一記憶體 晶片。 The wafer test structure of claim 1, wherein the chips are all a memory Wafer. 一種晶片測試裝置,包含:一外殼,具有一第一基座及一第二基座,該第一基座及該第二基座各別具有多個軌道,該第一基座及該第二基座為相並排;以及至少一如請求項1至6任一項所述之晶片測試結構,該晶片測試結構之該測試元件設置於該第一基座的該些軌道的其中一個上,該承載元件設置於該第二基座的該些軌道的其中一個上。 A wafer testing device includes: a housing having a first base and a second base, the first base and the second base each having a plurality of tracks, the first base and the second The susceptor is side-by-side; and at least one of the wafer test structures of any one of claims 1 to 6, wherein the test component of the wafer test structure is disposed on one of the tracks of the first pedestal, The carrier element is disposed on one of the tracks of the second base. 如請求項7所述之晶片測試裝置,其中該外殼更具有一隔板,該隔板設置於該第一基座及該第二基座之間,以使該第一基座及該第二基座分別位於兩相隔離的空間中。 The wafer testing device of claim 7, wherein the outer casing further has a partition disposed between the first base and the second base to enable the first base and the second The pedestals are respectively located in two isolated spaces. 如請求項7所述之晶片測試裝置,更包含一加熱器,該加熱器連接該外殼,以提供熱能至該第二基座中。 The wafer testing apparatus of claim 7 further comprising a heater coupled to the outer casing to provide thermal energy to the second pedestal. 一種晶片測試方法,包含:將多個晶片分別設置於一承載元件的多個晶片承載座上;將該承載元件電性連接一測試元件,使得該測試元件的一測試模組電性連接該些晶片承載座及該些晶片;使該測試模組檢測該些晶片承載座上的該些晶片;以及將該承載元件及該測試元件相分離,並將另一承載元件電性連接該測試元件,以使該測試元件測試該另一承載元件上的另多個晶片。 A wafer testing method includes: disposing a plurality of wafers on a plurality of wafer carriers of a carrier component; electrically connecting the carrier components to a test component, such that a test module of the test component is electrically connected to the a wafer carrier and the wafers; causing the test module to detect the wafers on the wafer carriers; and separating the carrier member from the test component and electrically connecting the other carrier component to the test component, The test element is tested for a plurality of other wafers on the other carrier element. 如請求項10所述之晶片測試方法,其中當該測試模組檢測該些晶片時,該測試模組先對該些晶片一次寫入測試資料,然後 該測試模組再依序讀取該些晶片的測試資料。 The wafer testing method of claim 10, wherein when the testing module detects the wafers, the testing module writes test data to the wafers at a time, and then The test module sequentially reads the test data of the wafers. 如請求項10所述之晶片測試方法,更包含:於該測試模組檢測該些晶片時,提供熱能至該承載元件,使得該些晶片的溫度提高。 The wafer testing method of claim 10, further comprising: providing thermal energy to the carrier component when the test module detects the wafers, such that the temperature of the wafers is increased.
TW101146798A 2012-12-12 2012-12-12 Chip testing structure, device and method TWI493202B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101146798A TWI493202B (en) 2012-12-12 2012-12-12 Chip testing structure, device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101146798A TWI493202B (en) 2012-12-12 2012-12-12 Chip testing structure, device and method

Publications (2)

Publication Number Publication Date
TW201423126A TW201423126A (en) 2014-06-16
TWI493202B true TWI493202B (en) 2015-07-21

Family

ID=51393935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101146798A TWI493202B (en) 2012-12-12 2012-12-12 Chip testing structure, device and method

Country Status (1)

Country Link
TW (1) TWI493202B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI705250B (en) * 2019-07-17 2020-09-21 美商第一檢測有限公司 Chip testing device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020026258A1 (en) * 2000-03-16 2002-02-28 Hitachi Electronics Engineering Co., Ltd. Method and apparatus for testing IC device
US6476629B1 (en) * 2000-02-23 2002-11-05 Micron Technology, Inc. In-tray burn-in board for testing integrated circuit devices in situ on processing trays
TWM286615U (en) * 2005-07-11 2006-02-01 L & F Plastics Co Ltd Improved support board structure
TW200836279A (en) * 2007-02-16 2008-09-01 King Yuan Electronics Co Ltd Burn-in testing apparatus for semiconductor device
TWM396483U (en) * 2010-04-16 2011-01-11 Abletec Automation Ltd Multi-chip detecting system
TW201109633A (en) * 2009-09-14 2011-03-16 Star Techn Inc Testing apparatus for light-emitting devices and sending module for the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476629B1 (en) * 2000-02-23 2002-11-05 Micron Technology, Inc. In-tray burn-in board for testing integrated circuit devices in situ on processing trays
US20020026258A1 (en) * 2000-03-16 2002-02-28 Hitachi Electronics Engineering Co., Ltd. Method and apparatus for testing IC device
TWM286615U (en) * 2005-07-11 2006-02-01 L & F Plastics Co Ltd Improved support board structure
TW200836279A (en) * 2007-02-16 2008-09-01 King Yuan Electronics Co Ltd Burn-in testing apparatus for semiconductor device
TW201109633A (en) * 2009-09-14 2011-03-16 Star Techn Inc Testing apparatus for light-emitting devices and sending module for the same
TWM396483U (en) * 2010-04-16 2011-01-11 Abletec Automation Ltd Multi-chip detecting system

Also Published As

Publication number Publication date
TW201423126A (en) 2014-06-16

Similar Documents

Publication Publication Date Title
US7473568B2 (en) Memory-module manufacturing method with memory-chip burn-in and full functional testing delayed until module burn-in
JP5615852B2 (en) Electronic device test system
US7800391B2 (en) Apparatus for testing a chip and methods of making and using the same
US8250722B2 (en) Method for repairing motherboard
US20090217093A1 (en) Fault Diagnosis of Serially-Addressed Memory Modules on a PC Motherboard
TWI700499B (en) Chip testing system
JP2005181222A (en) Manufacturing method for semiconductor device
TWI445974B (en) Test system and method for ports with multi functions
JPH09503577A (en) Reusable die carrier for burn-in and burn-in processing
JP2004184415A (en) Device for inspecting semiconductor package and inspection method using it
JP2007049161A (en) Doughnut-type parallel probe card and method of inspecting wafer by using it
TW522438B (en) Method for producing semiconductor device
TWI493202B (en) Chip testing structure, device and method
US9470714B2 (en) Testing apparatus for flash memory chip
CN103869234A (en) Chip testing structure, device and method
TW542917B (en) Apparatus and method for testing module devices
JP2004055837A (en) Prober and method for inspecting semiconductor device
TWI410633B (en) Upright test apparatus for electronic assemblies
JP3111959B2 (en) Inspection method and system of wiring inspection device
KR20200039934A (en) Apparatus for testing memory module during burn-in using mother board
TWI416137B (en) Adapted test apparatus for electronic components
CN207337928U (en) A kind of storage device detection device
JP2012247435A (en) Test method for semiconductor device
CN218824585U (en) Aging daughter board, aging test assembly and performance test assembly
JP2018147980A (en) Inspection system