TWI700499B - Chip testing system - Google Patents

Chip testing system Download PDF

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TWI700499B
TWI700499B TW108125193A TW108125193A TWI700499B TW I700499 B TWI700499 B TW I700499B TW 108125193 A TW108125193 A TW 108125193A TW 108125193 A TW108125193 A TW 108125193A TW I700499 B TWI700499 B TW I700499B
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test
wafer
equipment
chip
electrical connection
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TW108125193A
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Chinese (zh)
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TW202104922A (en
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振龍 蔡
基因 羅森塔爾
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美商第一檢測有限公司
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Priority to TW108125193A priority Critical patent/TWI700499B/en
Priority to US16/733,237 priority patent/US11327110B2/en
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Publication of TW202104922A publication Critical patent/TW202104922A/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2856Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/002Test chambers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/06Acceleration testing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868Complete testing stations; systems; procedures; software aspects
    • G01R31/287Procedures; Software aspects
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

Abstract

The invention discloses a chip testing system comprising: a central control device, a chip mounting device, a plurality of environmental control devices, a sorting device and a transfer device. The central control unit can control the chip mounting device to mount a plurality of chips to the chip test device. Each of the environmental control devices includes a plurality of chambers that are independent of each other, and temperature adjusting devices are disposed in each of the chambers. The central control unit can control the transfer device and place the chip test device in one of the chambers of the environmental control device. When the chip testing device carries the chip and is disposed in the chamber, the central control device can control the temperature adjusting device to operate, so as that the plurality of chips can be tested by the chip testing device in a predetermined testing procedure.

Description

晶片測試系統Wafer test system

本發明涉及一種晶片測試系統,尤其涉及一種能適用於記憶體測試的晶片測試系統。The invention relates to a chip testing system, in particular to a chip testing system suitable for memory testing.

一般來說,記憶體在出廠前,必須通過高溫測試、預燒(Burn-In)測試,或高溫測試、預燒測試及低溫測試。現有的記憶體測試設備,記憶體在進行高溫測試、預燒測試或低溫測試時,必須反覆地被插拔於不同的電連接座,為此,容易造成記憶體接腳的毀壞,且反覆地插拔亦浪費大量的時間,而造成測試效率低落的問題。Generally speaking, the memory must pass a high temperature test, a burn-in test, or a high temperature test, a burn-in test, and a low temperature test before leaving the factory. With existing memory testing equipment, the memory must be repeatedly plugged in and out of different electrical connectors during high temperature test, burn-in test or low temperature test. For this reason, it is easy to cause damage to the memory pins and repeatedly Plugging and unplugging also wastes a lot of time and causes the problem of low test efficiency.

本發明實施例在於提供一種晶片測試系統,其用以改善現有的記憶體設備,在讓記憶體處於不同溫度環境中進行測試時,必須反覆地拆裝晶片,而造成測試效率低落,且容易造成記憶體的接腳損壞的問題。The embodiment of the present invention is to provide a chip test system, which is used to improve the existing memory device. When the memory is tested in different temperature environments, the chip must be repeatedly disassembled and assembled, resulting in low test efficiency and easy to cause The pins of the memory are damaged.

本發明實施例公開一種晶片測試系統,其用以對多個晶片進行測試,晶片測試系統包含:一中央控制裝置、一晶片安裝設備、至少一環境控制設備、一移載設備及一分類設備。晶片安裝設備能被中央控制裝置控制,而將多個晶片安裝於一晶片測試裝置的多個電連接座上。環境控制設備連接中央控制裝置,各個環境控制設備包含:一設備本體及多個溫度調節裝置。設備本體包含多個容置室,設備本體連接一供電設備,各個容置室能容置晶片測試裝置,設備本體具有多個供電構件,各個供電構件連接供電設備,而供電設備能通過供電構件提供電力給設置於各個容置室中的晶片測試裝置。各個容置室中設置有一個溫度調節裝置;各個溫度調節裝置能受中央控制裝置控制,而使相對應的容置室中的晶片測試裝置的多個電連接座上的晶片的周圍溫度到達一預定溫度。移載設備能被中央控制裝置控制而載運晶片測試裝置,以使晶片測試裝置於晶片安裝設備、多個環境控制設備的多個容置室及分類設備之間移動;其中,當移載設備將承載有多個晶片的晶片測試裝置,由晶片安裝設備移載至其中一個環境控制設備的其中一個容置室中時,供電設備能通過設備本體的供電構件提供電力給晶片測試裝置;當晶片測試裝置被供電,且溫度調節裝置使晶片測裝置上的多個晶片的周圍溫度到達預定溫度時,中央控制裝置能控制晶片測試裝置,對其所承載的多個晶片進行一預定測試程序。分類設備能受中央控制裝置控制,而將多個晶片由晶片測試裝置的多個電連接座卸下,且分類設備能依據各個晶片完成預定測試程序後的測試結果,將各個晶片置放於一良品區或一不良品區。其中,當晶片測試裝置對其所承載的多個晶片完成預定測試程序時,中央控制裝置將控制移載設備,以將晶片測試裝置由容置室中移載至分類設備。The embodiment of the invention discloses a wafer testing system for testing multiple wafers. The wafer testing system includes: a central control device, a wafer mounting device, at least one environmental control device, a transfer device and a sorting device. The chip mounting equipment can be controlled by a central control device to mount multiple chips on multiple electrical connection seats of a wafer testing device. The environmental control equipment is connected to the central control device, and each environmental control device includes: an equipment body and a plurality of temperature adjustment devices. The main body of the equipment contains multiple accommodating chambers. The main body of the equipment is connected to a power supply device. Each accommodating chamber can accommodate a wafer test device. The main body of the equipment has multiple power supply components. Electricity is supplied to the wafer testing equipment installed in each containing chamber. Each accommodating chamber is provided with a temperature adjustment device; each temperature adjustment device can be controlled by the central control device, so that the surrounding temperature of the wafer on the multiple electrical connection seats of the wafer test device in the corresponding accommodating chamber reaches a level Scheduled temperature. The transfer equipment can be controlled by the central control device to carry the wafer test device, so that the wafer test device can be moved between the wafer mounting equipment, the multiple accommodation chambers of the multiple environmental control equipment and the sorting equipment; among them, when the transfer equipment will When the wafer testing device carrying multiple wafers is transferred from the wafer mounting equipment to one of the accommodating chambers of one of the environmental control equipment, the power supply device can provide power to the wafer testing device through the power supply member of the equipment body; When the device is powered and the temperature adjustment device makes the surrounding temperature of the multiple wafers on the wafer test device reach a predetermined temperature, the central control device can control the wafer test device to perform a predetermined test procedure on the multiple wafers it carries. The sorting equipment can be controlled by the central control device, and the multiple wafers can be unloaded from the multiple electrical connectors of the wafer testing device, and the sorting equipment can place each wafer in a place based on the test results of each wafer after the predetermined test procedure is completed. Good product area or a defective product area. Wherein, when the wafer testing device completes a predetermined test procedure for the multiple wafers it carries, the central control device will control the transfer equipment to transfer the wafer testing device from the containing chamber to the sorting equipment.

綜上所述,本發明實施例所公開的晶片測試系統,可以利用晶片安裝設備將多個晶片安裝於晶片測試裝置上,而後利用移載設備將晶片測試裝置及其承載的晶片一同移載至容置室中,並利用溫度調節裝置使設置於容置室中的晶片測試裝置所承載的晶片的周圍溫度達到預定溫度;接著,提供電力給晶片測試裝置後,晶片測試裝置將會對其所承載的多個晶片進行測試;最後,當晶片測試裝置對其承載的多個晶片完成測試後,再透過移載設備及分類設備,依據各晶片完成測試後的結果對其進行分類。是以,本發明的晶片測試系統可以讓晶片於測試過程中,不會被反覆地插拔。In summary, the wafer testing system disclosed in the embodiments of the present invention can use the wafer mounting equipment to mount multiple wafers on the wafer testing device, and then use the transfer equipment to transfer the wafer testing device and the wafers it carries to In the accommodating chamber, the temperature adjustment device is used to make the surrounding temperature of the wafer carried by the wafer testing device installed in the accommodating chamber reach a predetermined temperature; then, after power is supplied to the wafer testing device, the wafer testing device will The multiple wafers carried are tested; finally, after the wafer testing device has completed the testing of the multiple wafers carried by it, the transfer equipment and the sorting equipment are used to classify the wafers according to the results of the testing. Therefore, the chip testing system of the present invention can prevent the chip from being repeatedly inserted and removed during the testing process.

請一併參閱圖1、圖2及圖3,圖1為本發明公開的晶片測試系統的示意圖,圖2為本發明公開的晶片測試系統的方塊示意圖,圖3為本發明公開的晶片測試裝置的示意圖。本發明公開的晶片測試系統E用以對多個晶片C進行測試。晶片測試系統E包含:一中央控制裝置E1、一晶片安裝設備E2、至少一晶片測試裝置1、多個環境控制設備E3、一移載設備E4及一分類設備E5。Please refer to Figure 1, Figure 2 and Figure 3 together. Figure 1 is a schematic diagram of the wafer testing system disclosed in the present invention, Figure 2 is a block schematic diagram of the wafer testing system disclosed in the present invention, and Figure 3 is a wafer testing device disclosed in the present invention Schematic diagram. The wafer testing system E disclosed in the present invention is used to test multiple wafers C. The wafer testing system E includes: a central control device E1, a wafer mounting device E2, at least one wafer testing device 1, a plurality of environmental control devices E3, a transfer device E4, and a sorting device E5.

中央控制裝置E1連接晶片安裝設備E2、多個環境控制設備E3、移載設備E4及分類設備E5,而中央控制裝置E1能控制各個設備的作動;中央控制裝置E1例如是伺服器、各式電腦設備等,於此不加以限制。晶片安裝設備E2可以是包含有一機械手臂(圖未示),機械手臂能受中央控制裝置E1控制,以將設置載盤(tray)上的多個晶片C逐一取出後,逐一置放於晶片測試裝置1的多個電連接座2上。The central control device E1 is connected to the chip installation equipment E2, multiple environmental control equipment E3, transfer equipment E4, and classification equipment E5, and the central control device E1 can control the actions of each device; the central control device E1 is, for example, a server, various computers Equipment, etc., are not restricted here. The chip mounting equipment E2 may include a robotic arm (not shown). The robotic arm can be controlled by the central control device E1 to take out multiple chips C on the tray one by one and place them one by one on the chip for testing. The multiple electrical connection bases 2 of the device 1 are installed.

如圖2、圖3及圖4所示,圖4顯示為晶片測試裝置1的方塊示意圖。晶片測試裝置1用以承載多個晶片C,且晶片測試裝置1能被移載設備E4載運而於多個工作站(例如晶片安裝設備E2、多個環境控制設備E3、移載設備E4及分類設備E5)之間傳遞。As shown in FIGS. 2, 3 and 4, FIG. 4 shows a block diagram of the wafer testing apparatus 1. The wafer testing device 1 is used to carry multiple wafers C, and the wafer testing device 1 can be carried by the transfer equipment E4 to multiple workstations (such as wafer mounting equipment E2, multiple environmental control equipment E3, transfer equipment E4, and sorting equipment) E5) transfer between.

晶片測試裝置1包含:一電路板10、多個電連接座2、一控制機組3及至少一供電構件4。電路板10彼此相反的兩側分別定義為一第一側面101及一第二側面102。多個電連接座2固定設置於電路板10的第一側面101,各個電連接座2用以承載一個所述晶片C。關於電連接座2的形式可以是依據不同晶片C變化,於此不加以限制。The wafer testing device 1 includes: a circuit board 10, a plurality of electrical connection seats 2, a control unit 3 and at least one power supply component 4. The opposite sides of the circuit board 10 are defined as a first side surface 101 and a second side surface 102 respectively. A plurality of electrical connection seats 2 are fixedly arranged on the first side surface 101 of the circuit board 10, and each electrical connection seat 2 is used to carry one chip C. Regarding the form of the electrical connection base 2 can be changed according to different chips C, it is not limited here.

在實際應用中,多個電連接座2可以是區隔為多個電連接座群組,各個電連接座群組包含至少一個電連接座2。控制機組3設置於電路板10的第二側面102,控制機組3包含多個測試模組30,各個測試模組30對應與一個電連接座群組相連接。In practical applications, the multiple electrical connection bases 2 may be divided into multiple electrical connection base groups, and each electrical connection base group includes at least one electrical connection base 2. The control unit 3 is disposed on the second side surface 102 of the circuit board 10, and the control unit 3 includes a plurality of test modules 30, and each test module 30 is correspondingly connected to an electrical connector group.

具體來說,本實施例的圖3中,電路板10上設置有96個電連接座2,而其可以是區分為16組電連接座群組,各個電連接座群組包含有6個電連接座2,而各個電連接座群組中的6個電連接座2是連接於同一個測試模組30,亦即,在圖3中電路板10可以是設置有16個測試模組30。當然,電路板10上設置的電連接座2的數量及其對應被區隔為多少個電連接座群組,皆可以是依據需求變化。Specifically, in FIG. 3 of this embodiment, 96 electrical connection sockets 2 are provided on the circuit board 10, which can be divided into 16 groups of electrical connection sockets, and each electrical connection socket group includes 6 electrical connection sockets. The connection base 2 and the six electrical connection bases 2 in each electrical connection base group are connected to the same test module 30, that is, the circuit board 10 in FIG. 3 may be provided with 16 test modules 30. Of course, the number of electrical connection sockets 2 provided on the circuit board 10 and how many electrical connection socket groups are divided into corresponding groups can be changed according to requirements.

各個測試模組30被供電時,能對其所連接的多個電連接座2上的多個晶片C進行一預定測試程序,舉例來說,所述晶片C可以是各式記憶體(例如是NAND Flash等),而各個測試模組30能對各個記憶體進行讀取測試、寫入測試及電性測試中的至少一個。在各個測試模組30用以測試記憶體的實施例中,各個測試模組30可以包含有圖形產生器(Pattern Generator, PG)、參數量測單元(Parametric Measurement Unit, PMU)、元件電源供應模組(Device Power Supplies, DPS)及驅動電路(Driver)。When each test module 30 is powered on, a predetermined test procedure can be performed on a plurality of chips C on the plurality of electrical connection sockets 2 to which it is connected. For example, the chip C may be various types of memory (for example, NAND Flash, etc.), and each test module 30 can perform at least one of a read test, a write test, and an electrical test on each memory. In the embodiment in which each test module 30 is used to test the memory, each test module 30 may include a pattern generator (PG), a parameter measurement unit (Parametric Measurement Unit, PMU), and a component power supply module. Group (Device Power Supplies, DPS) and drive circuit (Driver).

透過使設置於電路板10上的多個電連接座2,分別連接至多個不同的測試模組30的設計,測試模組30及其所連接的電連接座2上的多個晶片C,彼此間的訊號傳遞可以更快速且不易發生衰減。更具體來說,若設置有96個電連接座2的電路板10僅連接一個訊號輸入源,則訊號輸入源所發出的訊號,由電路板10的一側傳遞至電路板10的另一側時,訊號將明顯發生衰減的問題,從而可能導致晶片測試結果不準確的問題。Through the design that the multiple electrical connection sockets 2 provided on the circuit board 10 are respectively connected to multiple different test modules 30, the test module 30 and the multiple chips C on the electrical connection socket 2 connected to each other The signal transmission between them can be faster and less prone to attenuation. More specifically, if the circuit board 10 provided with 96 electrical connection sockets 2 is connected to only one signal input source, the signal from the signal input source is transmitted from one side of the circuit board 10 to the other side of the circuit board 10. At this time, the signal will obviously attenuate, which may lead to inaccurate chip test results.

值得一提的是,不同電連接座群組的多個電連接座2,彼此之間可以是不相互連接,而當晶片測試裝置1故障時,相關維修人員可以透過逐一測試各個電連接座群組,而快速地找出毀壞的電連接座2,且相關維修人員可以是僅更換毀壞的電連接座2、電連接座2的零組件、同群組的電連接座2或測試模組30,而相關人員無須更換整個電路板10的所有電連接座2或所有的測試模組30。It is worth mentioning that the multiple electrical connection sockets 2 of different electrical connection socket groups may not be connected to each other. When the chip testing device 1 fails, the relevant maintenance personnel can test each electrical connection socket group one by one. Group, and quickly find the damaged electrical connection base 2, and the relevant maintenance personnel can only replace the damaged electrical connection base 2, the components of the electrical connection base 2, the electrical connection base 2 or the test module 30 in the same group , And relevant personnel do not need to replace all the electrical connection seats 2 or all the test modules 30 of the entire circuit board 10.

如圖3所示,在實際應用中,晶片測試裝置1還可以是包含有一機殼31,所述機殼31固定設置於電路板10的第二側面102,而機殼31對應包覆多個測試模組30,以保護多個測試模組30。在具體的實施中,機殼31還可以是依據需求設置有相關的散熱裝置,例如是風扇、散熱鰭片等。於本實施例的圖3中,是以晶片測試裝置1僅包含有單一個機殼31,而機殼31是對應包覆多個測試模組30,但晶片測試裝置1的機殼31的數量不以單一個為限,在不同的應用中,晶片測試裝置1也可以是包含有多個機殼31,而各個機殼31可以是包覆有單一個測試模組30或是兩個、三個等數量的測試模組30。As shown in FIG. 3, in practical applications, the wafer testing device 1 may also include a housing 31 fixedly disposed on the second side 102 of the circuit board 10, and the housing 31 correspondingly covers a plurality of The test module 30 protects a plurality of test modules 30. In a specific implementation, the casing 31 may also be provided with related heat dissipation devices, such as fans, heat dissipation fins, etc., according to requirements. In FIG. 3 of this embodiment, the wafer testing device 1 only includes a single housing 31, and the housing 31 corresponds to covering a plurality of test modules 30, but the number of housings 31 of the wafer testing device 1 It is not limited to a single one. In different applications, the chip testing device 1 may also include multiple housings 31, and each housing 31 may be covered with a single test module 30 or two or three An equal number of test modules 30.

供電構件4設置於電路板10,供電構件4連接電路板10,而供電構件4可以通過電路板10連接多個測試模組30。供電構件4例如可以是板對板連接器,其形式例如可以為Pogo pin 或是簧片等結構,但不以此為限。於本實施例的圖3中,是以供電構件4包含有多個連接端子,且供電構件4設置於電路板10的第一側面101為例,但供電構件4的形式、數量及供電構件4設置於電路板的位置等,不以圖中所示為限。The power supply member 4 is disposed on the circuit board 10, the power supply member 4 is connected to the circuit board 10, and the power supply member 4 can be connected to a plurality of test modules 30 through the circuit board 10. The power supply member 4 can be, for example, a board-to-board connector, and its form can be, for example, a Pogo pin or a reed, but it is not limited to this. In FIG. 3 of the present embodiment, the power supply member 4 includes a plurality of connection terminals, and the power supply member 4 is provided on the first side 101 of the circuit board 10 as an example, but the form and number of the power supply member 4 and the power supply member 4 The location on the circuit board, etc. are not limited to those shown in the figure.

供電構件4用以與外部供電設備連接,而外部供電設備能通過供電構件4,供電給各個測試模組30,所述外部供電設備是指獨立於晶片測試裝置1的供電設備,外部供電設備可以是任何可以提供電力的設備,於此不加以限制。也就是說,晶片測試裝置1在沒有通過供電構件4與外部供電設備連接的情況下,各個測試模組30基本上是沒有電力對其所連接的多個晶片C進行預定測試程序。當然,在不同的實施例中,晶片測試裝置1也可以是設置有至少一電池,電池連接多個測試模組30,而電池能供電給多個測試模組30。The power supply component 4 is used to connect with an external power supply device, and the external power supply device can supply power to each test module 30 through the power supply component 4. The external power supply device refers to a power supply device independent of the wafer test apparatus 1. The external power supply device can It is any device that can provide electricity, so there is no restriction here. In other words, when the wafer testing apparatus 1 is not connected to an external power supply device through the power supply member 4, each test module 30 basically has no power to perform a predetermined test procedure on the multiple wafers C connected to it. Of course, in different embodiments, the chip testing device 1 may also be provided with at least one battery, the battery is connected to a plurality of test modules 30, and the battery can supply power to the plurality of test modules 30.

在另一實施例中,供電構件4可以是包括一接收天線,而供電構件4能以無線的方式接收電力,以提供電力給各個測試模組30。在供電構件4為接收天線的實施例中,晶片測試裝置1可以是包含有一充電電池模組,且供電構件4連接充電電池模組,而供電構件4能以無線的方式接收電力,以對所述充電電池模組充電;而,在具體的實施中,各個測試模組30對其所承載的晶片C進行測試所需的電力,則可以是來自於充電電池模組及外部供電設備通過接收天線(供電構件4)提供。在供電構件4為接收天線的實施例中,供電構件4的設置位置可以是不外露於晶片測試裝置1,而是埋設於電路板10中或是藏設於晶片測試裝置1中。另外,各個晶片測試裝置1所具有的供電構件4的數量,可以是依據需求變化,不侷限為單一個,也可以兩個或兩個以上。In another embodiment, the power supply member 4 may include a receiving antenna, and the power supply member 4 can receive power in a wireless manner to provide power to each test module 30. In the embodiment where the power supply member 4 is a receiving antenna, the chip testing device 1 may include a rechargeable battery module, and the power supply member 4 is connected to the rechargeable battery module, and the power supply member 4 can receive power in a wireless manner, so as to The rechargeable battery module is charged; and, in a specific implementation, the power required for each test module 30 to test the chip C carried by it can come from the rechargeable battery module and the external power supply device through the receiving antenna (Power supply member 4) Provided. In the embodiment where the power supply member 4 is a receiving antenna, the location of the power supply member 4 may not be exposed outside the chip testing device 1 but embedded in the circuit board 10 or hidden in the chip testing device 1. In addition, the number of power supply members 4 included in each wafer testing device 1 may vary according to requirements, and is not limited to a single one, and may also be two or more.

如圖3、圖4及圖10所示,特別說明的是,晶片測試裝置1還可以包含有多個第一資料傳輸端子8,而容置室E311中可以是對應設置有多個第二資料傳輸端子E32。多個第一資料傳輸端子8能與多個第二資料傳輸端子E32相互接觸並相互傳遞資訊。在實際應用中,各第一資料傳輸端子8及各第二資料傳輸端子E32可以是Pogo pin 或是簧片等結構,但不以此為限。關於第一資料傳輸端子8及第二資料傳輸端子E32的數量及其設置位置,可以是依據需求變化,於此不加以限制。As shown in FIGS. 3, 4, and 10, it is particularly noted that the wafer testing device 1 may also include a plurality of first data transmission terminals 8, and the accommodating chamber E311 may be correspondingly provided with a plurality of second data Transmission terminal E32. The plurality of first data transmission terminals 8 and the plurality of second data transmission terminals E32 can contact each other and transmit information to each other. In practical applications, each of the first data transmission terminals 8 and each of the second data transmission terminals E32 may have a Pogo pin or a reed structure, but is not limited to this. Regarding the number of the first data transmission terminal 8 and the second data transmission terminal E32 and their installation positions, they can be changed according to requirements, and are not limited here.

在不同的實施例中,晶片測試裝置1也可以是包含有至少一個第一資料傳輸天線(圖未示),而容置室E311中可以是對應設置有至少一個第二資料傳輸天線(圖未示)。第一資料傳輸天線能與第二資料傳輸天線相互作用,而以無線的方式相互傳輸資訊。在實際應用中,第一資料傳輸天線設置的位置不侷限於容置室E311中,只要第一資料傳輸天線可以與設置於容置室E311中的第二資料傳輸天線相互傳遞資訊,第一資料傳輸天線可以是設置於任何於環境控制設備E3的任意位置。In a different embodiment, the wafer testing device 1 may also include at least one first data transmission antenna (not shown), and at least one second data transmission antenna (not shown) may be correspondingly provided in the accommodation chamber E311. Show). The first data transmission antenna can interact with the second data transmission antenna to transmit information to each other in a wireless manner. In practical applications, the location of the first data transmission antenna is not limited to the storage room E311, as long as the first data transmission antenna can transmit information to the second data transmission antenna installed in the storage room E311, the first data The transmission antenna can be arranged at any position of the environmental control equipment E3.

請一併參閱圖5、圖6、圖7及圖8,圖5顯示為本發明公開的晶片測試裝置1的各個電連接座2的示意圖,圖6顯示為電連接座2的剖面分解示意圖,圖7顯示為電連接座2未設置有晶片C的剖面示意圖,圖8顯示為電連接座2設置有晶片C的剖面示意圖。Please refer to FIG. 5, FIG. 6, FIG. 7 and FIG. 8. FIG. 5 is a schematic diagram of each electrical connection base 2 of the chip testing device 1 disclosed in the present invention, and FIG. 6 is a cross-sectional exploded schematic view of the electrical connection base 2. 7 shows a schematic cross-sectional view of the electrical connection base 2 without the chip C, and FIG. 8 shows a schematic cross-sectional view of the electrical connection base 2 provided with the chip C.

各個電連接座2包含:多個探針組件20、一連接座本體21、一升降結構22、一支撐結構23及多個彈性組件24。各探針組件20包含針體201及彈簧202。針體201的一端用以與晶片C的電連接部C1(如圖8所示)相連接。彈簧202套設於針體201,且當針體201的一端受壓時,彈簧202將受壓而對應產生彈性回復力,藉此,當針體201不再受壓時,針體201將受彈性回復力作用而回復至未受壓的位置。Each electrical connection base 2 includes: a plurality of probe assemblies 20, a connection base body 21, a lifting structure 22, a supporting structure 23 and a plurality of elastic components 24. Each probe assembly 20 includes a needle body 201 and a spring 202. One end of the needle body 201 is used to connect with the electrical connection portion C1 of the chip C (as shown in FIG. 8 ). The spring 202 is sleeved on the needle body 201, and when one end of the needle body 201 is pressed, the spring 202 will be compressed and correspondingly generate elastic restoring force, whereby when the needle body 201 is no longer compressed, the needle body 201 will be The elastic restoring force returns to the uncompressed position.

連接座本體21具有一頂壁211及一環側壁212,頂壁211具有一開孔21A,環側壁212的一側連接於頂壁211的周緣,環側壁212的另一側固定設置於電路板10,頂壁211及環側壁212及電路板10共同形成有一容置槽21B。頂壁211彼此相反的兩側面定義為一外側面2111及一內側面2112(如圖7所示)。在實際應用中,頂壁211及環側壁212可以是一體成型地設置,連接座本體21還可以具有多個鎖孔21C(如圖5所示),多個鎖孔21C可以與多個鎖固件(例如螺絲)相互配合,以將連接座本體21固定於電路板10。The connecting seat body 21 has a top wall 211 and a ring side wall 212. The top wall 211 has an opening 21A. One side of the ring side wall 212 is connected to the periphery of the top wall 211, and the other side of the ring side wall 212 is fixedly arranged on the circuit board 10. , The top wall 211, the ring side wall 212 and the circuit board 10 jointly form a receiving groove 21B. The two opposite sides of the top wall 211 are defined as an outer side 2111 and an inner side 2112 (as shown in FIG. 7). In practical applications, the top wall 211 and the ring side wall 212 may be integrally formed, and the connecting base body 21 may also have a plurality of lock holes 21C (as shown in FIG. 5), and the plurality of lock holes 21C may be combined with a plurality of locking members. (For example, screws) cooperate with each other to fix the connector body 21 to the circuit board 10.

升降結構22包含有一基部221及一承載部222。基部221完全地設置於容置槽21B中,基部221向一側延伸形成有承載部222,承載部222的部分能穿設於開孔21A。承載部222的向遠離基部221的一側延伸形成有四個限位部223,四個限位部223可以是位於承載部222的四個邊角處,且四個限位部223與承載部222共同形成有一晶片容槽22B,晶片容槽22B用以提供晶片C設置,四個限位部223用以與晶片C相互卡合。升降結構22還具有多個連接孔22A(如圖6所示),各個連接孔22A貫穿基部221及承載部222設置。The lifting structure 22 includes a base 221 and a supporting portion 222. The base 221 is completely disposed in the accommodating groove 21B, and the base 221 extends to one side to form a supporting portion 222, and a portion of the supporting portion 222 can penetrate through the opening 21A. The bearing portion 222 has four limiting portions 223 extending away from the base 221. The four limiting portions 223 may be located at the four corners of the bearing portion 222, and the four limiting portions 223 and the bearing portion 222 jointly forms a wafer receiving groove 22B, the wafer receiving groove 22B is used to provide the setting of the chip C, and the four limiting portions 223 are used to engage the chip C with each other. The lifting structure 22 also has a plurality of connecting holes 22A (as shown in FIG. 6 ), and each connecting hole 22A is provided through the base 221 and the carrying portion 222.

多個探針組件20的一部分固定設置於支撐結構23中,且多個探針組件20固定設置於支撐結構23中的一端,用以與電路板10相連接;多個探針組件20的另一端則位於多個連接孔22A中,位於多個連接孔22A中的探針組件20的一端用以與晶片C的電連接部C1相連接。A part of the plurality of probe assemblies 20 is fixedly arranged in the supporting structure 23, and the plurality of probe assemblies 20 are fixedly arranged at one end of the supporting structure 23 for connecting with the circuit board 10; the other of the plurality of probe assemblies 20 One end is located in the plurality of connecting holes 22A, and one end of the probe assembly 20 located in the plurality of connecting holes 22A is used to connect with the electrical connection portion C1 of the chip C.

在實際應用中,支撐結構23可以是包含有一底座結構231及一輔助結構232。底座結構231設置於容置槽21B中,且底座結構231與本體21相互固定(例如是配合多個螺絲而與本體21相互固定)。底座結構231具有多個穿孔,而多個探針組件20的一端固定設置於底座結構231的多個穿孔中。輔助結構232設置於容置槽21B中,且輔助結構232位於底座結構231及頂壁211之間,輔助結構232與底座結構231相互固定(例如是利用螺絲相互鎖固)。輔助結構232具有多個彼此間隔地設置的支撐孔,多個支撐孔與底座結構231的多個穿孔相互連通,且多個支撐孔與多個連接孔22A相對應地設置,而多個連接孔22A、多個支撐孔及多個穿孔將共同形成有多個探針通道,多個探針組件20則對應設置於多個探針通道中。In practical applications, the supporting structure 23 may include a base structure 231 and an auxiliary structure 232. The base structure 231 is disposed in the accommodating groove 21B, and the base structure 231 and the main body 21 are fixed to each other (for example, a plurality of screws are used to fix the main body 21 to each other). The base structure 231 has a plurality of perforations, and one end of the plurality of probe assemblies 20 is fixedly disposed in the plurality of perforations of the base structure 231. The auxiliary structure 232 is disposed in the accommodating groove 21B, and the auxiliary structure 232 is located between the base structure 231 and the top wall 211, and the auxiliary structure 232 and the base structure 231 are fixed to each other (for example, using screws to lock each other). The auxiliary structure 232 has a plurality of support holes arranged at intervals, and the plurality of support holes communicate with the plurality of perforations of the base structure 231, and the plurality of support holes are arranged corresponding to the plurality of connecting holes 22A, and the plurality of connecting holes 22A. The multiple support holes and the multiple perforations will jointly form multiple probe channels, and the multiple probe assemblies 20 are correspondingly arranged in the multiple probe channels.

如圖7所示,支撐結構23設置於容置槽21B中,彈性組件24設置於支撐結構23及升降結構22之間。彈性組件24能使升降結構22的基部221抵靠頂壁211的內側面2112,並使基部221與支撐結構23之間對應形成有一間隙S。As shown in FIG. 7, the supporting structure 23 is disposed in the accommodating groove 21B, and the elastic component 24 is disposed between the supporting structure 23 and the lifting structure 22. The elastic component 24 can make the base 221 of the lifting structure 22 abut against the inner side surface 2112 of the top wall 211, and a gap S is formed between the base 221 and the supporting structure 23 correspondingly.

於實際應用中,在電連接座2固定於電路板10上,且電連接座2的限位部223未受外力抵壓時,位於升降結構22及支撐結構23之間的四個彈性組件24可以是略為被壓縮,而彈性組件24被壓縮所對應產生的彈性回復力,將使升降結構22穩固地抵靠於頂壁211的內側面2112。In practical applications, when the electrical connection base 2 is fixed on the circuit board 10 and the limiting portion 223 of the electrical connection base 2 is not pressed by external force, the four elastic components 24 located between the lifting structure 22 and the supporting structure 23 It may be slightly compressed, and the elastic restoring force generated by the compression of the elastic component 24 will make the lifting structure 22 stably abut against the inner surface 2112 of the top wall 211.

如圖8所示,當晶片C固定設置於晶片容槽22B中,且升降結構22未被抵壓時,晶片C的多個電連接部C1將對應容置於多個連接孔22A中,且各個探針組件20是未與多個電連接部C1相連接(例如是不相互接觸)。當升降結構22被抵壓時,升降結構22的至少一部分將內縮於連接座本體21中,即,升降結構22將相對於支撐結構23向電路板10的方向移動,而多個探針組件20將對應與晶片C的多個電連接部C1相連接。As shown in FIG. 8, when the chip C is fixedly arranged in the chip receiving groove 22B and the lifting structure 22 is not pressed, the plurality of electrical connection portions C1 of the chip C are correspondingly accommodated in the plurality of connection holes 22A, and Each probe assembly 20 is not connected to the plurality of electrical connection parts C1 (for example, they are not in contact with each other). When the lifting structure 22 is pressed, at least a part of the lifting structure 22 will retract in the connecting base body 21, that is, the lifting structure 22 will move in the direction of the circuit board 10 relative to the supporting structure 23, and the multiple probe assemblies 20 connects the plurality of electrical connection portions C1 corresponding to the wafer C.

請一併參閱圖3、圖9及圖10,圖9顯示為本發明公開的環境控制設備E3的示意圖。多個環境控制設備E3連接中央控制裝置E1,而中央控制裝置E1能控制任一個環境控制設備E3獨立地運作。各環境控制設備E3用以使設置於晶片測試裝置1上的多個晶片C於一預定溫度(例如是一預定高溫溫度或一預定低溫溫度)的環境中進行預定測試程序。Please refer to FIG. 3, FIG. 9 and FIG. 10 together. FIG. 9 is a schematic diagram of the environmental control device E3 disclosed in the present invention. Multiple environmental control devices E3 are connected to the central control device E1, and the central control device E1 can control any environmental control device E3 to operate independently. Each environmental control device E3 is used to make a plurality of wafers C set on the wafer testing device 1 perform a predetermined test procedure in an environment of a predetermined temperature (for example, a predetermined high temperature or a predetermined low temperature).

各個環境控制設備E3包含:一設備本體E31、多個容置室端子E33及多個溫度調節裝置E34。設備本體E31包含多個容置室E311。於此所指的容置室E311主要是用來容置晶片測試裝置1,而,環境控制設備E3所包含的多個容置室E311可以是相互連通或是不相互連通,於此不加以限制。設備本體E31連接一供電設備(即前述說明中所述及的獨立於晶片測試裝置1的外部供電設備)。設備本體E31可以是包含有多個供電構件,設備本體E31的供電構件電性連接供電設備,而供電設備能通過設備本體E31的多個供電構件,以提供電力給設置於各個容置室E311中的晶片測試裝置1。Each environmental control device E3 includes: an equipment body E31, a plurality of accommodation chamber terminals E33, and a plurality of temperature adjusting devices E34. The equipment body E31 includes a plurality of accommodation chambers E311. The accommodating chamber E311 referred to here is mainly used for accommodating the wafer testing device 1, and the plurality of accommodating chambers E311 included in the environmental control equipment E3 may or may not be in communication with each other, which is not limited here. . The equipment body E31 is connected to a power supply device (that is, the external power supply device independent of the wafer test apparatus 1 described in the foregoing description). The equipment body E31 may include a plurality of power supply components, the power supply components of the equipment body E31 are electrically connected to the power supply equipment, and the power supply equipment can provide power to each accommodation chamber E311 through the multiple power supply components of the equipment body E31的wafer testing device1.

值得一提的是,在環境控制設備E3所包含的多個容置室E311彼此相互獨立,而不相互連通的實施例中,各個容置室E311可以是設置有一活動門,且環境控制設備E3可以是連接有一抽氣設備。當晶片測試裝置1設置於容置室E311中時,中央控制裝置E1可以控制相對應的活動門作動,以使容置室E311成為密閉空間,而後,中央控制裝置E1可以控制抽氣設備作動,以使容置室E311呈現為近似於真空的狀態,如此,將可使容置室E311內的溫度不易受外在環境影響。It is worth mentioning that, in an embodiment where the multiple accommodating chambers E311 included in the environmental control equipment E3 are independent of each other and not connected to each other, each accommodating chamber E311 may be provided with a movable door, and the environmental control equipment E3 It can be connected to a suction device. When the wafer testing device 1 is installed in the accommodating chamber E311, the central control device E1 can control the action of the corresponding movable door so that the accommodating chamber E311 becomes a closed space. Then, the central control device E1 can control the action of the pumping equipment, In order to make the accommodating chamber E311 appear in a state similar to a vacuum, the temperature in the accommodating chamber E311 will not be easily affected by the external environment.

在晶片測試裝置1的供電構件4包含有多個連接端子的實施例中,設備本體E31的供電構件可以是對應包含有多個容置室端子E33,且各個容置室E311中可以是對應設置有多個容置室端子E33,多個容置室端子E33用以與晶片測試裝置1的多個連接端子相連接。關於容置室端子E33的設置位置,可以是依據晶片測試裝置1設置於容置室E311中的位置及其供電構件4的多個連接端子的位置進行設計,於此不加以限制。在晶片測試裝置1的供電構件4為接收天線的實施例中,各容置室E311中則可以是對應設置有無線充電用的發射天線,發射天線連接外部供電設備,而當晶片測試裝置1設置於容置室E311中的預定位置時,容置室E311中的發射天線則能與晶片測試裝置1的接收天線(供電構件4)耦合,而外部供電設備得以提供電力給各測試模組30。In the embodiment where the power supply member 4 of the wafer testing device 1 includes multiple connection terminals, the power supply member of the equipment body E31 may correspondingly include a plurality of receiving chamber terminals E33, and each receiving chamber E311 may be correspondingly provided There are a plurality of accommodating chamber terminals E33, and the plurality of accommodating chamber terminals E33 are used to connect with a plurality of connection terminals of the wafer testing device 1. Regarding the location of the accommodating chamber terminal E33, it can be designed based on the location of the wafer testing device 1 in the accommodating chamber E311 and the location of the multiple connection terminals of the power supply member 4, which is not limited here. In the embodiment where the power supply member 4 of the wafer testing device 1 is a receiving antenna, each containing chamber E311 may be correspondingly provided with a transmitting antenna for wireless charging, and the transmitting antenna is connected to an external power supply device, and when the wafer testing device 1 is set When in a predetermined position in the accommodating chamber E311, the transmitting antenna in the accommodating chamber E311 can be coupled with the receiving antenna (power supply member 4) of the wafer testing device 1 and the external power supply device can provide power to each test module 30.

各個溫度調節裝置E34連接中央控制裝置E1,各個溫度調節裝置E34能被中央控制裝置E1控制,而使相對應的容置室E311中的晶片測試裝置1的多個電連接座2上的晶片C的周圍溫度到達預定溫度。Each temperature adjustment device E34 is connected to the central control device E1, and each temperature adjustment device E34 can be controlled by the central control device E1, so that the wafers C on the multiple electrical connection seats 2 of the wafer testing device 1 in the corresponding housing chamber E311 The ambient temperature reaches the predetermined temperature.

在其中一個實際例中,多個溫度調節裝置E34可以區分為多個加熱裝置E34A及多個致冷裝置E34B。多個加熱裝置E34A設置於設備本體E31,多個致冷裝置E34B設置於設備本體E31;各個容置室E311中的溫度能被其中一個加熱裝置E34A或其中一個致冷裝置E34B改變,以到達預定的低溫溫度或是預定的高溫溫度。In one of the actual examples, the plurality of temperature adjustment devices E34 can be divided into a plurality of heating devices E34A and a plurality of refrigeration devices E34B. A plurality of heating devices E34A are arranged on the equipment body E31, and a plurality of refrigeration devices E34B are arranged on the equipment body E31; the temperature in each accommodating chamber E311 can be changed by one of the heating devices E34A or one of the cooling devices E34B to reach a predetermined value The low temperature or the predetermined high temperature.

各個加熱裝置E34A可以包含有一高溫接觸結構E34A1,高溫接觸結構E34A1用以與設置於晶片測試裝置1上的多個晶片C的一側面相接觸。各個加熱裝置E34A連接中央控制裝置E1,而中央控制裝置E1能控制各個加熱裝置E34A獨立地運作,而使各個加熱裝置E34A的高溫接觸結構E34A1的溫度提升至預定高溫溫度。其中,所述高溫接觸結構E34A1的材質可以是依據預定高溫溫度決定,且高溫接觸結構E34A1用以接觸多個晶片C的一側可以呈一平坦狀。Each heating device E34A may include a high-temperature contact structure E34A1, and the high-temperature contact structure E34A1 is used to contact a side surface of a plurality of wafers C provided on the wafer testing device 1. Each heating device E34A is connected to the central control device E1, and the central control device E1 can control each heating device E34A to operate independently, so that the temperature of the high temperature contact structure E34A1 of each heating device E34A is raised to a predetermined high temperature. The material of the high-temperature contact structure E34A1 may be determined according to a predetermined high-temperature temperature, and the side of the high-temperature contact structure E34A1 for contacting the plurality of chips C may be flat.

在具體的應用中,各個高溫接觸結構E34A1中可以是包含有各式電熱加熱器(例如加熱線圈),或者,高溫接觸結構E34A1中也可以是包含有多個流道,各流道提供高溫流體通過。當然,也可以是將電熱加熱器或具有多個流道的相關加熱器,設置於高溫接觸結構E34A1的一側。In specific applications, each high-temperature contact structure E34A1 may contain various electric heaters (such as heating coils), or the high-temperature contact structure E34A1 may also contain multiple flow channels, and each flow channel provides high-temperature fluid. by. Of course, it is also possible to arrange an electric heater or a related heater with multiple flow channels on one side of the high temperature contact structure E34A1.

各個致冷裝置E34B可以包含有一低溫接觸結構E34B1,低溫接觸結構E34B1用以與設置於晶片測試裝置1上的多個晶片C的一側相接觸。各個致冷裝置E34B連接中央控制裝置E1,而中央控制裝置E1能控制各個致冷裝置E34B獨立地運作,而使各個致冷裝置E34B的低溫接觸結構E34B1的溫度降低至預定低溫溫度。其中,所述低溫接觸結構E34B1的材質可以是依據預定低溫溫度決定,且低溫接觸結構E34B1用以接觸多個晶片C的一側的一側可以呈一平坦狀。在具體的應用中,各個低溫接觸結構E34B1中可以是包含有多個流道,各流道提供低溫流體通過,或者,也可以是將具有多個流道的相關構件,設置於低溫接觸結構E34B1的一側。Each refrigeration device E34B may include a low-temperature contact structure E34B1, and the low-temperature contact structure E34B1 is used to contact one side of a plurality of wafers C provided on the wafer testing device 1. Each refrigeration device E34B is connected to the central control device E1, and the central control device E1 can control each refrigeration device E34B to operate independently, so that the temperature of the low temperature contact structure E34B1 of each refrigeration device E34B is reduced to a predetermined low temperature. Wherein, the material of the low-temperature contact structure E34B1 may be determined according to a predetermined low-temperature temperature, and the side of the low-temperature contact structure E34B1 for contacting the plurality of chips C may be flat. In specific applications, each low-temperature contact structure E34B1 may contain multiple flow channels, and each flow channel provides a low-temperature fluid to pass through, or it may also be related components with multiple flow channels arranged in the low-temperature contact structure E34B1 Side.

在上述實施例中,是以各個加熱裝置E34A包含有高溫接觸結構E34A1,各致冷裝置E34B包含有低溫接觸結構E34B1,而加熱裝置E34A及致冷裝置E34B是分別透過高溫接觸結構E34A1及低溫接觸結構E34B1來接觸多個晶片C的一側面,以直接對各個晶片C進行熱傳遞或熱導出,而使多個晶片C的溫度到達預定溫度。但,在不同的應用中,各加熱裝置E34A及各致冷裝置E34B也可以以非接觸的方式,來使晶片測試裝置1上的多個晶片C的周圍溫度到達預定溫度,舉例來說,各加熱裝置E34A或致冷裝置E34B可以是直接提升或是降低相對應的容置室E311內的溫度。In the above embodiment, each heating device E34A includes a high-temperature contact structure E34A1, each refrigeration device E34B includes a low-temperature contact structure E34B1, and the heating device E34A and the refrigeration device E34B are respectively through the high-temperature contact structure E34A1 and the low-temperature contact structure. The structure E34B1 is used to contact one side surface of a plurality of wafers C to directly transfer or dissipate heat to each wafer C, so that the temperature of the plurality of wafers C reaches a predetermined temperature. However, in different applications, each heating device E34A and each cooling device E34B can also make the surrounding temperature of the multiple wafers C on the wafer testing device 1 reach a predetermined temperature in a non-contact manner. For example, each The heating device E34A or the cooling device E34B can directly raise or lower the temperature in the corresponding accommodating chamber E311.

在上述說明中,是以各個容置室E311中設置有加熱裝置E34A或是致冷裝置E34B為例,但各個容置室E311所設置的溫度調節裝置E34不侷限僅具有單一加熱功能,或是僅具有單一致冷功能。在不同的實施例中,各個溫度調節裝置E34可以是同時包含有一加熱器E341及一致冷器E342,且各個溫度調節裝置E34還可以是依據需求包含有一接觸結構E343。加熱器E341及致冷器E342能被中央控制裝置E1控制,而使接觸結構E343的溫度到達預定高溫溫度或預定低溫溫度。接觸結構E343用來與設置於晶片測試裝置1上的多個晶片C相接觸,藉此用直接接觸的方式來使多個晶片C的溫度到達預定溫度。當然,在不同的應用中,各溫度調節裝置E34也可以是不具有接觸結構E343,而各溫度調節裝置E34是透過加熱器E341或是致冷器E342,以使相對應的容置室E311,到達預定高溫溫度或是預定低溫溫度。In the above description, the heating device E34A or the refrigerating device E34B is provided in each accommodating chamber E311 as an example, but the temperature adjusting device E34 provided in each accommodating chamber E311 is not limited to only having a single heating function, or Only has a single cold function. In different embodiments, each temperature adjusting device E34 may include a heater E341 and a uniform cooler E342 at the same time, and each temperature adjusting device E34 may also include a contact structure E343 according to requirements. The heater E341 and the refrigerator E342 can be controlled by the central control device E1, so that the temperature of the contact structure E343 reaches a predetermined high temperature or a predetermined low temperature. The contact structure E343 is used for contacting the plurality of wafers C provided on the wafer testing device 1, thereby making the temperature of the plurality of wafers C reach a predetermined temperature in a direct contact manner. Of course, in different applications, each temperature adjusting device E34 may not have the contact structure E343, and each temperature adjusting device E34 may pass through the heater E341 or the refrigerator E342, so that the corresponding accommodating chamber E311, Reach a predetermined high temperature or a predetermined low temperature.

請一併參閱圖9、圖10、圖11、圖12、圖13及圖14,各個環境控制設備E3的溫度調節裝置E34可以是與一罩體E35相互連接。罩體E35的一側內凹形成有一凹槽E351,罩體E35具有一容置開孔E352,容置開孔E352與凹槽E351相連通。罩體E35還具有兩個抽氣孔E353。各環境控制設備E3可以是包含有至少一抽氣裝置E37,而兩個抽氣孔E353則用以與抽氣裝置E37相連接。Please refer to FIG. 9, FIG. 10, FIG. 11, FIG. 12, FIG. 13 and FIG. 14, the temperature adjusting device E34 of each environmental control device E3 may be connected to a cover E35. A groove E351 is concavely formed on one side of the cover E35. The cover E35 has an accommodating opening E352, and the accommodating opening E352 is communicated with the groove E351. The cover E35 also has two suction holes E353. Each environmental control device E3 may include at least one exhaust device E37, and two exhaust holes E353 are used to connect with the exhaust device E37.

溫度調節裝置E34例如可以是包含有前述接觸結構E34A1、E34B1、E343,且接觸結構E34A1、E34B1、E343的一側可以是呈現為平坦狀,接觸結構E34A1、E34B1、E343內可以是包含有至少一流道E344,而接觸結構E34A1、E34B1、E343對應具有一流體入口E345及一流體出口E346,藉此,高溫流體或是低溫流體將可通過流體入口E345進入流道E344中,再由流體出口E346流出,藉此,透過高溫流體或低溫流體不間斷地流動於流道E344中,將可使接觸結構E34A1、E34B1、E343的溫度到達預定溫度。The temperature adjusting device E34 may for example include the aforementioned contact structures E34A1, E34B1, E343, and one side of the contact structures E34A1, E34B1, E343 may be flat, and the contact structures E34A1, E34B1, E343 may include at least first Channel E344, and the contact structures E34A1, E34B1, E343 correspondingly have a fluid inlet E345 and a fluid outlet E346, whereby high-temperature fluid or low-temperature fluid can enter the flow channel E344 through the fluid inlet E345, and then flow out from the fluid outlet E346 As a result, the high-temperature fluid or the low-temperature fluid continuously flows in the flow channel E344, so that the temperature of the contact structures E34A1, E34B1, and E343 can reach a predetermined temperature.

在實際應用中,罩體E35還可以是固定設置有一蓋體E36,蓋體E36與溫度調節裝置E34之間可以是對應形成有一容置空間SP1,容置空間SP1則可以是填充有任何可以阻隔熱能傳遞的構件。In practical applications, the cover E35 can also be fixedly provided with a cover E36. A accommodating space SP1 can be formed between the cover E36 and the temperature adjusting device E34, and the accommodating space SP1 can be filled with anything that can be blocked. Thermal energy transfer components.

請參閱圖14及圖15,圖14顯示晶片測試裝置1的電連接座2及設置於其上的晶片C,與溫度調節裝置E34的接觸結構E34A1、E34B1、E343相互接觸的示意圖,圖15為圖14的局部放大示意圖。如圖所示,在罩體E35抵靠於電路板10的一側時,罩體E35、接觸結構E34A1、E34B1、E343及電路板10將共同形成一封閉空間SP2,而多個電連接座2將對應位於所述封閉空間SP2中;於此同時,供電構件4的多個連接端子可以是對應與多個容置室端子E33相連接。Please refer to FIGS. 14 and 15. FIG. 14 shows a schematic diagram of the electrical connection base 2 of the wafer testing device 1 and the chip C disposed thereon in contact with the contact structures E34A1, E34B1, and E343 of the temperature adjusting device E34. FIG. 15 is Figure 14 is a partial enlarged schematic view. As shown in the figure, when the cover E35 abuts against one side of the circuit board 10, the cover E35, the contact structures E34A1, E34B1, E343, and the circuit board 10 will jointly form a closed space SP2, and a plurality of electrical connection seats 2 Will be correspondingly located in the closed space SP2; at the same time, the multiple connection terminals of the power supply member 4 may be correspondingly connected to the multiple accommodation chamber terminals E33.

如圖8及圖15所示,在中央控制裝置E1控制抽氣設備作動,以通過罩體E35的抽氣孔E353,將封閉空間SP2中的氣體向外抽出,,以使封閉空間SP2呈現為接近真空或是真空的狀態的過程中,接觸結構E34A1、E34B1、E343將抵壓各個電連接座2的升降結構22,而各個升降結構22將相對於連接座本體21向靠近電路板10的方向移動,而多個探針組件20將對應與晶片C的多個電連接部C1相連接,且接觸結構E34A1、E34B1、E343將對應抵靠於多個晶片C的一側面;換言之,在封閉空間SP2中的氣體被向外抽出的過程中,接觸結構E34A1、E34B1、E343將抵壓各個電連接座2的升降結構22,而電連接座2的升降結構22將由圖8所示的狀態轉換為圖15所示的狀態。As shown in Figures 8 and 15, the central control device E1 controls the operation of the air extraction device to extract the gas in the enclosed space SP2 through the air extraction hole E353 of the cover E35, so that the enclosed space SP2 appears close During the vacuum or vacuum state, the contact structures E34A1, E34B1, and E343 will press the lifting structure 22 of each electrical connection base 2, and each lifting structure 22 will move in a direction closer to the circuit board 10 relative to the connection base body 21 , And the plurality of probe assemblies 20 will correspond to the plurality of electrical connection parts C1 of the chip C, and the contact structures E34A1, E34B1, E343 will correspondingly abut against one side of the plurality of chips C; in other words, in the enclosed space SP2 In the process of the gas being drawn outward, the contact structures E34A1, E34B1, and E343 will press the lifting structure 22 of each electrical connection base 2, and the lifting structure 22 of the electrical connection base 2 will be converted from the state shown in FIG. 15 shown in the state.

在實際應用中,中央控制裝置E1控制抽氣設備,將封閉空間SP2中的空氣抽出的時間點,可以是依據需求設計。舉例來說,中央控制裝置E1可以是在供電構件4所包含的多個連接端子(如圖3所示)與容置室端子E33(如圖10所示)相連接時,控制抽氣設備作動,以將封閉空間SP2中的空氣抽出;或者,中央控制裝置E1也可以是透過設置於容置室E311(如圖9所示)中的至少一個感測器(例如是光學感測器或機械式按壓感測器等),來判斷晶片測試裝置1是否已經設置於容置室E311中的預定位置,而中央控制裝置E1在通過感測器判斷晶片測試裝置1位於容置室E311中的預定位置時,則控制抽氣設備作動,以將封閉空間SP2中的空氣抽出。In practical applications, the central control device E1 controls the air extraction equipment, and the time point at which the air in the enclosed space SP2 is extracted can be designed according to requirements. For example, the central control device E1 may control the operation of the air extraction device when the multiple connection terminals (as shown in FIG. 3) included in the power supply member 4 are connected to the receiving chamber terminal E33 (as shown in FIG. 10) , In order to extract the air in the enclosed space SP2; or, the central control device E1 can also be through at least one sensor (such as an optical sensor or a mechanical device) arranged in the containing chamber E311 (as shown in FIG. 9) Type pressure sensor, etc.) to determine whether the wafer testing device 1 has been set in the predetermined position in the accommodating chamber E311, and the central control device E1 uses the sensor to determine that the wafer testing device 1 is located in the predetermined position in the accommodating chamber E311. In the position, the air extraction device is controlled to act to extract the air in the enclosed space SP2.

如圖10及圖15所示,當抽氣裝置E37將封閉空間SP2內的氣體向外抽出,而接觸結構E34A1、E34B1、E343對應抵靠於多個晶片C的一側面,且各個電連接座2的多個探針組件20與設置於其上的晶片C的多個電連接部C1相連接時,中央控制裝置E1將可控制溫度調節裝置E34作動,以使接觸結構E34A1、E34B1、E343到達預定溫度,且中央控制裝置E1可以是在接觸結構E34A1、E34B1、E343的溫度到達預定溫度時,控制各電連接座2所連接的測試模組30對該晶片C進行預定測試程序。As shown in Figures 10 and 15, when the exhaust device E37 draws out the gas in the enclosed space SP2, the contact structures E34A1, E34B1, and E343 correspondingly abut one side surface of the multiple chips C, and each electrical connection seat When the plurality of probe assemblies 20 of 2 are connected to the plurality of electrical connection parts C1 of the wafer C set on it, the central control device E1 will actuate the controllable temperature adjustment device E34 to make the contact structures E34A1, E34B1, and E343 reach When the temperature of the contact structures E34A1, E34B1, and E343 reaches a predetermined temperature, the central control device E1 can control the test module 30 connected to each electrical connector 2 to perform a predetermined test procedure on the chip C.

透過上述罩體E35及抽氣裝置E37的相互配合,可以大幅降低接觸結構E34A1、E34B1、E343同時抵壓多個電連接座2的升降結構22所需要的作用力,亦即,可以降低升降裝置E38(於後詳述)使晶片測試裝置1所承載的多個晶片C,同時抵靠於接觸結構E34A1、E34B1、E343所需的作用力。Through the mutual cooperation of the aforementioned cover E35 and the air extraction device E37, the force required for the contact structures E34A1, E34B1, and E343 to simultaneously press the lifting structures 22 of the multiple electrical connection seats 2 can be greatly reduced, that is, the lifting devices can be reduced E38 (detailed later) makes the multiple wafers C carried by the wafer testing device 1 abut the contact structures E34A1, E34B1, and E343 at the same time.

請復參圖1及圖2,移載設備E4設置於多個環境控制設備E3之間,而移載設備E4用以載運晶片測試裝置1。移載設備E4可以是包含機械手臂及固持組件,固持組件用以固持晶片測試裝置1。中央控制裝置E1連接移載設備E4,而中央控制裝置E1能控制移載設備E4,以將承載有多個晶片C的晶片測試裝置1設置於任一環境控制設備E3的任一容置室E311(如圖9所示)中。相對地,移載設備E4亦可被中央控制裝置E1控制,以將設置於任一容置室E311中的晶片測試裝置1移出容置室E311。Please refer to FIG. 1 and FIG. 2 again. The transfer equipment E4 is arranged between the plurality of environmental control devices E3, and the transfer equipment E4 is used to carry the wafer test device 1. The transfer equipment E4 may include a robotic arm and a holding component, and the holding component is used to hold the wafer testing device 1. The central control device E1 is connected to the transfer equipment E4, and the central control device E1 can control the transfer equipment E4 to install the wafer testing device 1 carrying multiple wafers C in any accommodating room E311 of any environmental control equipment E3 (As shown in Figure 9). In contrast, the transfer equipment E4 can also be controlled by the central control device E1 to move the wafer testing device 1 arranged in any accommodating chamber E311 out of the accommodating chamber E311.

分類設備E5連接中央控制裝置E1,而分類設備E5能受中央控制裝置E1控制,以將多個晶片C由晶片測試裝置1的多個電連接座2上卸下,且分類設備E5能依據各個晶片C通過預定測試程序後的測試結果,將各個晶片C置放於一良品區A1的載盤或一不良品區A2的載盤。分類設備E5例如可以是包含有機械手臂。在分類設備E5與晶片安裝設備E2設置於相鄰位置的實施例中,晶片安裝設備E2及分類設備E5可以是共用同一個機械手臂。在實際應用中,所述良品區A1還可以是依據需求,區隔有多個區域,而分類設備E5可以是依據各個晶片C通過預定測試程序後的測試結果,將晶片C設置於良品區A1的不同區域,舉例來說,可以是依據晶片C的運作效能進行區分。The sorting equipment E5 is connected to the central control device E1, and the sorting equipment E5 can be controlled by the central control device E1 to unload a plurality of wafers C from the multiple electrical connection seats 2 of the wafer testing device 1, and the sorting equipment E5 can be based on each After the chip C has passed the test result of the predetermined test procedure, each chip C is placed on a carrier plate in a good product area A1 or a carrier plate in a defective product area A2. The classification device E5 may include a robotic arm, for example. In the embodiment in which the sorting equipment E5 and the wafer mounting equipment E2 are arranged at adjacent positions, the wafer mounting equipment E2 and the sorting equipment E5 may share the same robotic arm. In practical applications, the good product area A1 can also be divided into multiple areas based on requirements, and the classification device E5 can set the chip C in the good product area A1 based on the test results of each chip C after passing a predetermined test procedure. For example, the different areas can be distinguished based on the operating performance of chip C.

如圖16所示,其為本發明公開的一種晶片測試方法的第一實施例的流程示意圖。上述晶片測試系統E可以是用以下晶片測試方法,對多個晶片C進行預定測試程序,所述晶片測試方法包含: 一晶片安裝步驟S1:透過晶片安裝設備(E2),將多個晶片(C)由一載盤,移載至晶片測試裝置(1)的多個電連接座(2)上; 一移入步驟S2:將承載有多個晶片(C)的晶片測試裝置(1),移載至其中一個環境控制設備(E3)的其中一個容置室(E311); 一溫度調節步驟S3:控制容置室(E311)中的溫度調節裝置(E34)運作,以使多個晶片(C)處於預定溫度的環境中; 一測試步驟S4:供電給設置於容置室(E311)中的晶片測試裝置(1),以使各個測試模組(30)對其所連接的多個晶片(C)進行預定測試程序; 一移出步驟S6:將晶片測試裝置(1)由容置室(E311)中移出,並將晶片測試裝置(1)移載至分類設備(E5); 一分類步驟S7:利用分類設備(E5),依據各個晶片(C)完成預定測試程序後的測試結果,將多個晶片(C)分別置放至良品區(A1)或不良品區(A2)。 As shown in FIG. 16, it is a schematic flowchart of the first embodiment of a wafer testing method disclosed in the present invention. The above-mentioned wafer testing system E may use the following wafer testing methods to perform predetermined testing procedures on multiple wafers C, and the wafer testing methods include: A chip mounting step S1: through the chip mounting equipment (E2), a plurality of chips (C) are transferred from a carrier plate to a plurality of electrical connectors (2) of the chip testing device (1); 1. Move into step S2: move the wafer testing device (1) carrying multiple wafers (C) to one of the containing chambers (E311) of one of the environmental control equipment (E3); A temperature adjustment step S3: controlling the operation of the temperature adjustment device (E34) in the containing chamber (E311) so that the plurality of wafers (C) are in an environment with a predetermined temperature; A test step S4: power is supplied to the wafer testing device (1) arranged in the containing chamber (E311), so that each test module (30) performs a predetermined test procedure on the multiple wafers (C) connected to it; One removal step S6: remove the wafer testing device (1) from the containing chamber (E311), and transfer the wafer testing device (1) to the sorting equipment (E5); A sorting step S7: Using sorting equipment (E5), according to the test results of each wafer (C) after completing the predetermined test procedure, place multiple wafers (C) in the good product area (A1) or the defective product area (A2) respectively .

在晶片測試裝置1的供電構件4包含有多個連接端子的實施例中,於測試步驟S4前,還可以包含有一連接步驟:使晶片測試裝置1的供電構件4的多個連接端子與設置於容置室E311中的多個容置室端子E33相連接。在具體實施中,連接步驟可以是位於移入步驟S2及溫度調節步驟S3之間,或者連接步驟也可以是位於溫度調節步驟S3及測試步驟S4之間。In the embodiment where the power supply member 4 of the wafer testing device 1 includes multiple connection terminals, before the test step S4, a connection step may be included: connecting the multiple connection terminals of the power supply member 4 of the wafer testing device 1 to the A plurality of accommodating chamber terminals E33 in the accommodating chamber E311 are connected. In specific implementation, the connecting step may be between the moving-in step S2 and the temperature adjusting step S3, or the connecting step may also be between the temperature adjusting step S3 and the testing step S4.

如圖17所示,其為本發明的一種晶片測試方法的第二實施例的流程示意圖。本實施例與圖16所示的實施例的最大差異在於:在移入步驟S2及溫度調節步驟S3之間還可以是包含有一抽氣步驟S21。於移入步驟S2中是使設置於容置室E311中的罩體E35及晶片測試裝置1的電路板10相互連接,而使罩體E35與電路板10共同形成封閉空間SP2(如圖14所示),而後,於抽氣步驟S21中,則是使與封閉空間SP2相連接的抽氣裝置作動,以將封閉空間SP2內的空氣向外抽出。As shown in FIG. 17, it is a schematic flowchart of a second embodiment of a wafer testing method of the present invention. The biggest difference between this embodiment and the embodiment shown in FIG. 16 is that a pumping step S21 may be included between the moving in step S2 and the temperature adjusting step S3. In the moving step S2, the cover E35 and the circuit board 10 of the wafer testing device 1 are connected to each other, and the cover E35 and the circuit board 10 together form a closed space SP2 (as shown in FIG. 14 ), and then, in the air extraction step S21, the air extraction device connected to the enclosed space SP2 is activated to extract the air in the enclosed space SP2 to the outside.

如圖14所示及前述相對應的實施例說明,當罩體E35與電路板10共同形成封閉空間SP2時,各個電連接座2是對應位於封閉空間SP2中。在執行抽氣步驟S21後,各個電連接座2將是位於接近真空的環境中,因此,後續執行溫度調節步驟S3時,封閉空間SP2的溫度將不易受外在環境影響,而電連接座2及其所承載的晶片C的周圍溫度,將容易維持在預定的溫度。As shown in FIG. 14 and the corresponding embodiments described above, when the cover E35 and the circuit board 10 together form a closed space SP2, each electrical connection seat 2 is correspondingly located in the closed space SP2. After performing the air extraction step S21, each electrical connection base 2 will be located in an environment close to vacuum. Therefore, when the temperature adjustment step S3 is subsequently performed, the temperature of the enclosed space SP2 will not be easily affected by the external environment, and the electrical connection base 2 The surrounding temperature of the wafer C and the wafer C it carries can easily be maintained at a predetermined temperature.

如圖18所示,其為本發明公開的一種晶片測試方法的第三實施例的流程示意圖。本實施例與前述實施例最大不同之處在於:於測試步驟S4及移出步驟S6之間則還可以包含有以下步驟: 一分離步驟S5:在晶片測試裝置(1)對其所連接的所有晶片(C)完成預定測試程序後,控制晶片測試裝置(1)的供電構件(4)與容置室(E311)中的多個容置室端子(E33)相互分離。 As shown in FIG. 18, it is a schematic flowchart of a third embodiment of a wafer testing method disclosed in the present invention. The biggest difference between this embodiment and the previous embodiment is that between the test step S4 and the removal step S6, the following steps may also be included: A separation step S5: After the wafer testing device (1) completes the predetermined test procedure for all the connected wafers (C), control the power supply member (4) of the wafer testing device (1) and the accommodating chamber (E311) The plurality of receiving chamber terminals (E33) are separated from each other.

如圖3、圖9及圖10所示,在實際應用中,環境控制設備E3還可以包含多個升降裝置E38,各個容置室E311設置有一個升降裝置E38。各個升降裝置E38連接中央控制裝置E1。各個升降裝置E38能被中央控制裝置E1控制,而使設置於容置室E311中的晶片測試裝置1進行升降作動,進而使晶片測試裝置1的供電構件4的多個連接端子與容置室端子E33相互連接或相互分離。As shown in FIGS. 3, 9 and 10, in practical applications, the environmental control equipment E3 may also include a plurality of lifting devices E38, and each containing room E311 is provided with a lifting device E38. Each lifting device E38 is connected to the central control device E1. Each lifting device E38 can be controlled by the central control device E1, so that the wafer testing device 1 installed in the containing chamber E311 can be moved up and down, so that the multiple connection terminals of the power supply member 4 of the wafer testing device 1 and the containing chamber terminals E33 is connected or separated from each other.

在實際應用中,各晶片測試裝置1被移載設備E4送入容置室E311中時,晶片測試裝置1的多個供電構件4可以是不與多個容置室端子E33相連接,而當中央控制裝置E1判斷任一容置室E311中設置有晶片測試裝置1時,中央控制裝置E1則可以控制相對應的升降裝置E38作動,以使晶片測試裝置1於容置室E311中移動,從而使供電構件4的多個連接端子與容置室端子E33相連接,藉此,外部供電設備將可透過供電構件4提供電力給多個測試模組30。In practical applications, when each wafer testing device 1 is transferred into the accommodating chamber E311 by the transfer equipment E4, the multiple power supply members 4 of the wafer testing device 1 may not be connected to the multiple accommodating chamber terminals E33, and when When the central control device E1 determines that the wafer testing device 1 is provided in any accommodating chamber E311, the central control device E1 can control the corresponding lifting device E38 to act, so as to move the wafer testing device 1 in the accommodating chamber E311, thereby The plurality of connection terminals of the power supply member 4 are connected to the accommodation chamber terminal E33, whereby the external power supply device can provide power to the plurality of test modules 30 through the power supply member 4.

在實際應用中,關於中央控制裝置E1如何判斷任一容置室E311中是否設置有晶片測試裝置1的方式,可以是依據需求設計,於此不加以限制。舉例來說,可以是於容置室E311中設置有感測器(例如是光學感測器或是任何機械式的按壓開關等),當晶片測試裝置1進入容置室E311中時,感測器將對應產生相關訊號並傳遞至中央控制裝置E1,而中央控制裝置E1則可以是依據感測器所傳遞的訊號來判斷容置室E311中是否設置有晶片測試裝置1。當然,感測器也可以是用來確認晶片測試裝置1是否設置於容置室E311中的預定位置,而感測器可以是依據晶片測試裝置1位於容置室E311中的位置,傳遞相對應的訊號至中央控制裝置E1,中央控制裝置E1則可以是依據感測器所傳遞的訊號,判斷晶片測試裝置1是否位於容置室E311中的預定位置,若中央控制裝置E1判斷晶片測試裝置1位於容置室E311中的預定位置,則中央控制裝置E1可以是控制升降裝置E38作動;反之,若中央控制裝置E1判斷晶片測試裝置1不是位於容置室E311中的預定位置,則中央控制裝置E1可以是控制相關的警示裝置作動以警示使用者,舉例來說,中央控制裝置E1可以是控制相關警示燈發出特定顏色的燈光、控制相關顯示螢幕顯示錯誤訊息等。In practical applications, the manner in which the central control device E1 determines whether there is a wafer testing device 1 in any accommodating chamber E311 can be designed according to requirements and is not limited here. For example, a sensor (such as an optical sensor or any mechanical push switch, etc.) may be provided in the accommodating chamber E311, and when the wafer testing device 1 enters the accommodating chamber E311, the sensor The sensor will correspondingly generate relevant signals and transmit them to the central control device E1, and the central control device E1 can determine whether the wafer testing device 1 is provided in the containing chamber E311 according to the signal transmitted by the sensor. Of course, the sensor can also be used to confirm whether the wafer testing device 1 is set in a predetermined position in the accommodating chamber E311, and the sensor can be based on the position of the wafer testing device 1 in the accommodating chamber E311, and transfer corresponding Signal to the central control device E1, the central control device E1 can be based on the signal transmitted by the sensor to determine whether the wafer test device 1 is located in the predetermined position in the containing chamber E311, if the central control device E1 determines the wafer test device 1 Located at a predetermined position in the accommodating chamber E311, the central control device E1 can control the lifting device E38 to act; on the contrary, if the central control device E1 determines that the wafer testing device 1 is not located in the predetermined position in the accommodating chamber E311, the central control device E1 can control related warning devices to act to warn users. For example, the central control device E1 can control related warning lights to emit light of a specific color, and control related display screens to display error messages.

在供電構件4為接收天線的實施例中,當晶片測試裝置1設置於容置室E311中時,位於容置室E311中相對應的發射天線,即可以是與接收天線相互耦合,而晶片測試裝置1即可通過供電構件4得到電力。當然,在另一實施例中,接收天線也可以是在晶片測試裝置1設置於容置室E311中的預定位置時,才可對應與接收天線相互耦合,於此不加以限制。In the embodiment where the power supply member 4 is a receiving antenna, when the wafer testing device 1 is set in the containing chamber E311, the corresponding transmitting antenna in the containing chamber E311 may be coupled with the receiving antenna, and the wafer testing The device 1 can obtain power through the power supply member 4. Of course, in another embodiment, the receiving antenna can also be coupled to the receiving antenna when the wafer testing device 1 is set in a predetermined position in the containing chamber E311, which is not limited here.

如圖3及圖10所示,在各個溫度調節裝置E34具有前述接觸結構E34A1、E34B1、E343的實施例中,升降裝置E38被控制而作動時,晶片測試裝置1及其所承載的多個晶片C將被升降裝置E38帶動,而向靠近接觸結構E34A1、E34B1、E343的方向移動或是向遠離接觸結構E34A1、E34B1、E343的方向移動。As shown in FIGS. 3 and 10, in the embodiment where each temperature adjusting device E34 has the aforementioned contact structure E34A1, E34B1, E343, when the lifting device E38 is controlled and actuated, the wafer testing device 1 and the multiple wafers it carries C will be driven by the lifting device E38 to move towards the contact structure E34A1, E34B1, E343 or move away from the contact structure E34A1, E34B1, E343.

在溫度調節裝置E34連接有罩體E35的實施例中,當升降裝置E38被控制而使晶片測試裝置1向接觸結構E34A1、E34B1、E343的方向移動預定位置時,罩體E35將對應蓋設於晶片測試裝置1的電路板10上,而罩體E35將與電路板10共同形成封閉空間SP2。而後,在所述溫度調節步驟S3前,中央控制裝置E1將先控制抽氣裝置E37對封閉空間SP2進行抽氣,以使封閉空間SP2呈現為接近真空的狀態,如此,在溫度調節步驟S3後,封閉空間SP2中的溫度將不易受外部環境影響。In the embodiment in which the temperature adjusting device E34 is connected to the cover E35, when the lifting device E38 is controlled to move the wafer test device 1 to the contact structure E34A1, E34B1, E343 direction to a predetermined position, the cover E35 will cover the corresponding On the circuit board 10 of the wafer testing device 1, the cover E35 and the circuit board 10 will form a closed space SP2 together. Then, before the temperature adjustment step S3, the central control device E1 will first control the air extraction device E37 to extract air from the enclosed space SP2 so that the enclosed space SP2 is in a state close to vacuum. In this way, after the temperature adjustment step S3 , The temperature in the enclosed space SP2 will not be easily affected by the external environment.

在實際應用中,當晶片測試裝置1設置於容置室E311中,且升降裝置E38使晶片測試裝置1上升後,多個晶片C可以是不與接觸結構E34A1、E34B1、E343相互接觸,而當抽氣裝置E37開始抽氣後,多個晶片C及接觸結構E34A1、E34B1、E343才相互接觸,但不以此為限。在另一實施例中,多個晶片C也可以是在抽氣裝置E37未進行抽氣時,即與接觸結構E34A1、E34B1、E343相互接觸。In practical applications, when the wafer testing device 1 is set in the accommodating chamber E311, and the lifting device E38 raises the wafer testing device 1, the plurality of wafers C may not be in contact with the contact structures E34A1, E34B1, E343, but when After the pumping device E37 starts pumping, the multiple wafers C and the contact structures E34A1, E34B1, and E343 are in contact with each other, but it is not limited to this. In another embodiment, the plurality of wafers C may also be in contact with the contact structures E34A1, E34B1, and E343 when the pumping device E37 is not performing pumping.

於測試步驟S4中,晶片測試裝置1是透過接收天線或是多個連接端子,與相對應的發射天線或是容置室端子相互耦合或相互連接,據以得到電力,從而各個測試模組30得以對其所連接的晶片C進行測試。In the testing step S4, the chip testing device 1 is coupled with or connected to the corresponding transmitting antenna or the terminal of the receiving chamber through the receiving antenna or a plurality of connection terminals to obtain power, so that each test module 30 The chip C connected to it can be tested.

如圖9及圖10所示,在實際應用中,為了使晶片測試裝置1的供電構件4的多個連接端子能與多個容置室端子E33穩固地相互連接,環境控制設備E3還可以包含多個限位裝置E39,多個限位裝置E39設置於多個容置室E311中。各個限位裝置E39連接中央控制裝置E1。各個限位裝置E39能被中央控制裝置E1控制,以限制晶片測試裝置1於容置室E311中的活動範圍。關於限位裝置E39的具體結構可以是依據需求設計,舉例來說,可以是使晶片測試裝置1設置有卡合孔,而限位裝置E39包含有相對應的卡勾結構,當限位裝置E39作動時,卡勾結構將可對應卡合於卡合孔中;又或者,限位裝置E39可以是包含有多個伸縮銷,而伸縮銷能對應穿設於晶片測試裝置1的卡合孔中。As shown in Figures 9 and 10, in practical applications, in order to enable the multiple connection terminals of the power supply member 4 of the wafer testing device 1 to be firmly connected to the multiple accommodation chamber terminals E33, the environmental control equipment E3 may also include A plurality of limiting devices E39, and the plurality of limiting devices E39 are arranged in the plurality of accommodation chambers E311. Each limit device E39 is connected to the central control device E1. Each limiting device E39 can be controlled by the central control device E1 to limit the range of movement of the wafer testing device 1 in the containing chamber E311. The specific structure of the limiting device E39 can be designed according to requirements. For example, the wafer testing device 1 can be provided with a clamping hole, and the limiting device E39 includes a corresponding hook structure. When the limiting device E39 When actuated, the hook structure can be correspondingly locked in the locking hole; or, the limiting device E39 can include a plurality of telescopic pins, and the telescopic pins can be correspondingly penetrated in the locking hole of the wafer testing device 1 .

依上所述,在各個環境控制設備E3的各個容置室E311中具有接觸結構E34A1、E34B1、E343、升降裝置E38及限位裝置E39的實施例中,上述晶片測試方法,於移入步驟S2中,可以是包含以下步驟: 一移入容置室步驟:將晶片測試裝置(1)移入容置室(E311); 一上升步驟:控制容置室(E311)中的升降裝置(E38),以使晶片測試裝置(1)向接觸結構(E34A1、E34B1、E343)方向移動; 一鎖定步驟:控制容置室(E311)中的限位裝置(E39),以使限位裝置(E39)限制晶片測試裝置(1)於容置室(E311)中的活動範圍。 As described above, in the embodiments in which the contact structures E34A1, E34B1, E343, the lifting device E38, and the limiting device E39 are provided in each accommodating chamber E311 of each environmental control device E3, the above-mentioned wafer testing method is moved into step S2 , Can include the following steps: A step of moving into the containing chamber: moving the wafer testing device (1) into the containing chamber (E311); A rising step: controlling the lifting device (E38) in the containing chamber (E311) to move the wafer testing device (1) to the contact structure (E34A1, E34B1, E343); A locking step: controlling the limiting device (E39) in the accommodating chamber (E311) so that the limiting device (E39) limits the movement range of the wafer testing device (1) in the accommodating chamber (E311).

依上所述,本發明的晶片測試方法簡單來說,可以是先將多個晶片安裝於晶片測試裝置1上;接著,將晶片測試裝置1移動至環境控制設備E3的其中一個容置室E311中;而後,控制升降裝置E38使晶片測試裝置1上升,以使晶片測試裝置1的多個晶片C的一側,鄰近於溫度調節裝置E34的接觸結構E34A1、E34B1、E343,並且使溫度調節裝置E34所連接的罩體E35蓋設於晶片測試裝置1的電路板10,以形成封閉空間SP2;隨後,控制抽氣裝置E37對封閉空間SP2進行抽氣,以使晶片測試裝置1上的多個晶片C的一側貼附於接觸結構E34A1、E34B1、E343,同時,控制溫度調節裝置E34作動,以使晶片C到達預定的溫度;在溫度調節裝置E34作動時,供電給晶片測試裝置1,以使多個測試模組30對多個晶片C進行測試。As described above, the wafer testing method of the present invention can be simply to mount multiple wafers on the wafer testing device 1; then, move the wafer testing device 1 to one of the accommodating chambers E311 of the environmental control equipment E3 Then, the lifting device E38 is controlled to raise the wafer testing device 1 so that one side of the multiple wafers C of the wafer testing device 1 is adjacent to the contact structures E34A1, E34B1, E343 of the temperature regulating device E34, and the temperature regulating device The cover E35 connected to the E34 is arranged on the circuit board 10 of the wafer testing device 1 to form a closed space SP2; then, the air extraction device E37 is controlled to evacuate the closed space SP2, so that multiple One side of the wafer C is attached to the contact structures E34A1, E34B1, E343, and at the same time, the operation of the temperature adjustment device E34 is controlled to make the wafer C reach a predetermined temperature; when the temperature adjustment device E34 is activated, power is supplied to the wafer test device 1 to The multiple test modules 30 test multiple chips C.

請參閱圖19,其顯示為本發明公開的晶片測試方法的第四實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述晶片測試方法最大不同之處在於:於移入步驟S2後及分離步驟S5前,溫度調節步驟S3及測試步驟S4可以是被重複執行兩次,其分別為溫度調節步驟S31、測試步驟S41及溫度調節步驟S32、測試步驟S42。Please refer to FIG. 19, which shows a schematic flow chart of the fourth embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the wafer testing method disclosed in this embodiment and the aforementioned wafer testing method is: after moving into step S2 and before separating step S5, the temperature adjustment step S3 and the test step S4 can be repeated twice, which are respectively Temperature adjustment step S31, test step S41, temperature adjustment step S32, and test step S42.

於溫度調節步驟S31及測試步驟S41中(即溫度調節步驟S3及測試步驟S4被第一次執行),是先控制容置室E311所對應的溫度調節裝置E34,以使多個晶片C處於115℃以上的溫度的環境中, 再控制各個測試模組30對多個晶片C進行讀取測試、寫入測試及電性測試中的至少一個。於此所指溫度調 節步驟S31及測試步驟S41即是對記憶體進行預燒(Burn-In)測試。In the temperature adjustment step S31 and the test step S41 (that is, the temperature adjustment step S3 and the test step S4 are executed for the first time), the temperature adjustment device E34 corresponding to the accommodating chamber E311 is first controlled so that the plurality of wafers C are at 115 In an environment with a temperature above ℃, each test module 30 is then controlled to perform at least one of a read test, a write test, and an electrical test on the plurality of chips C. The temperature adjustment step S31 and the test step S41 referred to here are to perform a burn-in test on the memory.

於溫度調節步驟S32及測試步驟S42中(即溫度調節步驟S3及測試步驟S4被第二次執行),是先控制容置室E311所對應的溫度調節裝置E34,以使多個晶片C處於75℃至95℃的溫度的環境中,再控制各個測試模組30對多個晶片C進行讀取測試、寫入測試及電性測試中的至少一個。於此所指溫度調節步驟S31及測試步驟S41即是對記憶體進行高溫測試。In the temperature adjustment step S32 and the test step S42 (that is, the temperature adjustment step S3 and the test step S4 are executed for the second time), the temperature adjustment device E34 corresponding to the accommodating chamber E311 is first controlled so that the plurality of wafers C are at 75 In an environment with a temperature ranging from ℃ to 95 ℃, each test module 30 is then controlled to perform at least one of a read test, a write test and an electrical test on the plurality of chips C. The temperature adjustment step S31 and the test step S41 referred to here are to perform a high temperature test on the memory.

特別說明的是,在不同的實施例中,上述測試步驟S41及溫度調節步驟S32之間,可以是包含有一移出步驟及一移入步驟;所述移出步驟是將晶片測試裝置1移出於當下的容置室E311,所述移入步驟則是將晶片測試裝置1移入另一個容置室E311中。也就是說,晶片測試裝置1可以先後位於溫度在115℃以上及溫度介於75℃至95℃的兩個不同的容置室E311(可以是位於同一個環境控制設備E3或是位於不同的環境控制設備E3)中進行測試作業。It is particularly noted that in different embodiments, between the above-mentioned test step S41 and the temperature adjustment step S32, there may be a moving-out step and a moving-in step; the moving-out step is to move the wafer testing device 1 out of the current content. In the holding chamber E311, the moving step is to move the wafer testing device 1 into another holding chamber E311. In other words, the wafer testing device 1 can be located in two different containing chambers E311 with a temperature above 115°C and a temperature ranging from 75°C to 95°C (which can be located in the same environmental control equipment E3 or in different environments). The test operation is performed in the control equipment E3).

請參閱圖20,其顯示為本發明公開的晶片測試方法的第五實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述圖19所示的晶片測試方法最大不同之處在於:於移入步驟S2後及分離步驟S5前,溫度調節步驟S3及測試步驟S4可以是被重複執行三次,其分別為前述溫度調節步驟S31、前述測試步驟S41、前述溫度調節步驟S32、前述測試步驟S42、溫度調節步驟S33及測試步驟S43。Please refer to FIG. 20, which shows a schematic flowchart of a fifth embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the wafer testing method disclosed in this embodiment and the wafer testing method shown in FIG. 19 is that after moving into step S2 and before separating step S5, the temperature adjustment step S3 and the test step S4 can be repeated three times , Which are the aforementioned temperature adjustment step S31, the aforementioned test step S41, the aforementioned temperature adjustment step S32, the aforementioned test step S42, the aforementioned temperature adjustment step S33, and the aforementioned test step S43.

於執行前述溫度調節步驟S32及前述測試步驟S42後,所執行的溫度調節步驟S33及測試步驟S43(即溫度調節步驟S3及測試步驟S4被第三次執行),是先控制容置室E311所對應的溫度調節裝置E34,以使多個晶片C處於-55℃至-35℃的溫度的環境中,再控制各個測試模組30對多個晶片C進行讀取測試、寫入測試及電性測試中的至少一個。換言之,本實施例公開的晶片測試方法是對多個晶片C依序進行預燒(Burn-In)測試、高溫測試及低溫測試。After performing the aforementioned temperature adjustment step S32 and the aforementioned test step S42, the executed temperature adjustment step S33 and the test step S43 (that is, the temperature adjustment step S3 and the test step S4 are executed for the third time) are first controlled by the containing chamber E311 Corresponding temperature adjustment device E34, so that the plurality of chips C are in a temperature environment of -55°C to -35°C, and then each test module 30 is controlled to perform read test, write test and electrical properties on the plurality of chips C At least one of the tests. In other words, the wafer testing method disclosed in this embodiment is to sequentially perform a burn-in test, a high temperature test, and a low temperature test on a plurality of wafers C.

請參閱圖21,其顯示為本發明公開的晶片測試方法的第六實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述圖19所示的晶片測試方法最大不同之處在於:於移入步驟S2後及分離步驟S5前,溫度調節步驟S3及測試步驟S4可以是被重複執行四次,其分別為前述溫度調節步驟S31、前述測試步驟S41、前述溫度調節步驟S32、前述測試步驟S42、前述溫度調節步驟S33、前述測試步驟S43、溫度調節步驟S34及測試步驟S44。Please refer to FIG. 21, which shows a schematic flow chart of the sixth embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the wafer testing method disclosed in this embodiment and the wafer testing method shown in FIG. 19 is that after moving into step S2 and before separating step S5, the temperature adjustment step S3 and the test step S4 can be repeatedly executed. Next, they are the aforementioned temperature adjustment step S31, the aforementioned test step S41, the aforementioned temperature adjustment step S32, the aforementioned test step S42, the aforementioned temperature adjustment step S33, the aforementioned test step S43, the aforementioned temperature adjustment step S34, and the aforementioned test step S44.

於執行前述溫度調節步驟S33及前述測試步驟S43後,所執行的溫度調節步驟S34及測試步驟S44(即溫度調節步驟S3及測試步驟S4被第四次執行),是先控制容置室E311所對應的溫度調節裝置E34,以使多個晶片C處於20℃至30℃的溫度(常溫)的環境中,再控制各個測試模組30對多個晶片C進行讀取測試、寫入測試及電性測試中的至少一個。換言之,本實施例公開的晶片測試方法是對多個晶片C依序進行預燒(Burn-In)測試、高溫測試、低溫測試及常溫測試。After executing the aforementioned temperature adjustment step S33 and the aforementioned test step S43, the executed temperature adjustment step S34 and the test step S44 (that is, the temperature adjustment step S3 and the test step S4 are executed for the fourth time) are first controlled by the containing chamber E311 The corresponding temperature adjusting device E34 keeps the plurality of chips C in a temperature (normal temperature) environment of 20°C to 30°C, and then controls each test module 30 to perform reading, writing, and electrical tests on the plurality of chips C At least one of the sex tests. In other words, the wafer testing method disclosed in this embodiment is to sequentially perform a burn-in test, a high temperature test, a low temperature test, and a normal temperature test on a plurality of wafers C.

依上所述,本實施例的晶片測試方法,可以是利用前述說明中,各個環境控制設備E3中的各個溫度調節裝置E34同時具有致冷器E342及加熱器E341的晶片測試系統E來執行。而,晶片測試裝置1被移入環境控制設備E3的容置室E311後,將依序於115℃以上的溫度的環境中、75℃至95℃的溫度的環境中、-55℃至-35℃的溫度的環境中、20℃至30℃的溫度的環境中,進行讀取測試、寫入測試及電性測試中的至少一個,亦即,對多個晶片C依序進行預燒(Burn-In)測試、高溫測試、低溫測試及常溫測試。當然,在實際應用中,晶片測試裝置1對多個晶片C進行預燒(Burn-In)測試、高溫測試、低溫測試及常溫測試的順序,可以是依據需求排列,不以上述順序為限。As described above, the wafer testing method of the present embodiment can be executed by using the wafer testing system E in which each temperature adjusting device E34 in each environmental control device E3 has a refrigerator E342 and a heater E341 in the foregoing description. However, after the wafer testing device 1 is moved into the containing chamber E311 of the environmental control equipment E3, it will be sequentially placed in an environment with a temperature of 115°C or higher, a temperature of 75°C to 95°C, and -55°C to -35°C. At least one of the reading test, the writing test, and the electrical test is performed in an environment with a temperature of 20°C to 30°C, that is, a plurality of chips C are sequentially burned (Burn- In) test, high temperature test, low temperature test and room temperature test. Of course, in practical applications, the sequence of the wafer testing device 1 for the burn-in test, high temperature test, low temperature test, and normal temperature test on multiple wafers C may be arranged according to requirements, and is not limited to the above sequence.

請參閱圖22,其顯示為本發明公開的晶片測試方法的第七實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述圖19所示的晶片測試方法最大不同之處在於:於移出步驟S6及分類步驟S7之間還可以包含以下步驟: 一移入步驟SX1:將承載有多個晶片(C)的晶片測試裝置(1),移載至另一個環境控制設備(E3)的容置室(E311); 一溫度調節步驟SX2:控制容置室(E311)中的溫度調節裝置(E34)運作,以使多個晶片(C)處於-55℃至-35℃的環境中; 一測試步驟SX3:供電給設置於容置室(E311) 中的晶片測試裝置(1),以使各個測試模組(30)對其所連接的多個晶片(C)進行預定測試程序。 Please refer to FIG. 22, which shows a schematic flowchart of a seventh embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the wafer testing method disclosed in this embodiment and the wafer testing method shown in FIG. 19 is that the following steps may be included between the removing step S6 and the sorting step S7: 1. Move into step SX1: move the wafer testing device (1) carrying multiple wafers (C) to the containing chamber (E311) of another environmental control device (E3); A temperature adjustment step SX2: controlling the operation of the temperature adjustment device (E34) in the containing chamber (E311) so that the multiple wafers (C) are in an environment of -55°C to -35°C; A test step SX3: power is supplied to the wafer testing device (1) set in the containing chamber (E311), so that each test module (30) performs a predetermined test procedure on the multiple wafers (C) connected to it.

本實施例的晶片測試方法,是使晶片測試裝置1先設置於其中一個環境控制設備E3的容置室E311中,並使多個晶片C依序處於115℃以上的溫度的環境中及75℃至95℃的溫度的環境中進行讀取測試、寫入測試及電性測試中的至少一個;而後,將晶片測試裝置1移出該容置室E311,並使晶片測試裝置1移入不同的環境控制設備E3的其中一個容置室E311(或是移入同一個環境控制設備E3的另一個容置室E311);隨後,該容置室E311的控制溫度調節裝置E34運作,而使晶片測試裝置1所承載的多個晶片C處於-55℃至-35℃的溫度的環境中進行讀取測試、寫入測試及電性測試中的至少一個。In the wafer testing method of this embodiment, the wafer testing device 1 is first installed in the containing chamber E311 of one of the environmental control equipment E3, and the multiple wafers C are sequentially placed in an environment with a temperature above 115°C and 75°C. Perform at least one of the read test, write test, and electrical test in an environment with a temperature of 95°C; then, move the wafer test device 1 out of the containing chamber E311, and move the wafer test device 1 into different environmental controls One of the accommodating chambers E311 of the equipment E3 (or the other accommodating chamber E311 moved into the same environmental control equipment E3); subsequently, the temperature control device E34 of the accommodating chamber E311 operates, so that the wafer testing device 1 At least one of a reading test, a writing test, and an electrical test is performed in an environment where the carried multiple chips C are at a temperature of -55°C to -35°C.

本實施例的晶片測試方法,可以是利用前述說明中晶片測試系統E來執行,特別是各個環境控制設備E3的各個容置室E311中僅設置有加熱裝置E34A或僅設置有致冷裝置E34B的晶片測試系統E。The wafer testing method of this embodiment can be executed by the wafer testing system E in the foregoing description, especially the wafers with only the heating device E34A or only the cooling device E34B in each accommodating chamber E311 of each environmental control device E3 Test system E.

本實施例的晶片測試方法,由於單一個容置室E311的溫度不會從100℃以上的溫度降至0℃以下的溫度,因此,可以大幅縮短使各個晶片C周圍的溫度到達預定高溫溫度及預定低溫溫度的時間,且亦可大幅降低各個溫度調節裝置E34使容置室E311到達預定溫度所需耗費的能源。In the wafer testing method of this embodiment, since the temperature of a single accommodating chamber E311 will not drop from a temperature above 100°C to a temperature below 0°C, it can be greatly shortened to make the temperature around each wafer C reach a predetermined high temperature and The time of the predetermined low temperature temperature can also greatly reduce the energy required for each temperature adjusting device E34 to reach the predetermined temperature of the containing chamber E311.

如圖23所示,其顯示為本發明公開的晶片測試方法的第八實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述晶片測試方法最大不同之處在於:在溫度調節步驟SX2及測試步驟SX3後,還可以是包含有溫度調節步驟SX4及測試步驟SX5。於溫度調節步驟SX4中是控制容置室E311中的溫度調節裝置E34運作,以使多個晶片C處於20℃至30℃的環境中。於測試步驟SX5中,則是供電給設置於容置室E311中的晶片測試裝置1,以使各個測試模組30對其所連接的多個晶片C進行預定測試程序。也就是說,於溫度調節步驟SX2及測試步驟SX3中,是使多個晶片C在低溫環境下進行測試,而於溫度調節步驟SX4及測試步驟SX中,則是使多個晶片C在常溫環境下進行測試。As shown in FIG. 23, it shows a schematic flow chart of the eighth embodiment of the wafer testing method disclosed in the present invention. The wafer testing system E can use this wafer testing method to test multiple memories (ie, the aforementioned wafers). The biggest difference between the wafer test method disclosed in this embodiment and the aforementioned wafer test method is that after the temperature adjustment step SX2 and the test step SX3, the temperature adjustment step SX4 and the test step SX5 may also be included. In the temperature adjustment step SX4, the operation of the temperature adjustment device E34 in the accommodating chamber E311 is controlled so that the plurality of wafers C are in an environment of 20°C to 30°C. In the testing step SX5, power is supplied to the wafer testing device 1 arranged in the containing chamber E311, so that each testing module 30 performs a predetermined testing procedure on the multiple wafers C connected to it. That is, in the temperature adjustment step SX2 and the test step SX3, the plurality of wafers C are tested in a low temperature environment, and in the temperature adjustment step SX4 and the test step SX, the plurality of wafers C are tested in a normal temperature environment Test under.

請參閱圖24,其顯示為本發明公開的晶片測試方法的第九實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述晶片測試方法最大不同之處在於:在使晶片測試裝置1與接觸結構E34A1、E34B1、E343相接觸而完成預定測試程序,且晶片測試裝置1被移出容置室E311時(即任一個移出步驟後),可以是接著執行以下步驟: 一位置測試步驟SY1:利用一位置檢測設備E8中的影像擷取單元擷取多個電連接座(2)及設置於其上的多個晶片(C)的影像,以產生一擷取影像資訊; 一判斷步驟SY2:依據擷取影像資訊,判斷多個晶片相對於其所對應的電連接座的位置是否符合容許偏差量。若多個晶片相對於其所對應的電連接座的位置符合容許偏差量,則接續將晶片測試裝置(1)移載至下一個工作站,或者是移載至另一個容置室(E311),以使多個晶片(C)於另一溫度環境中進行測試。所述工作站例如是移載至分類設備(E5)以進行分類作業。若多個晶片相對於其所對應的電連接座的位置不符合容許偏差量,則重新安裝晶片。 Please refer to FIG. 24, which shows a schematic flowchart of a ninth embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the wafer testing method disclosed in this embodiment and the aforementioned wafer testing method is that the wafer testing device 1 is brought into contact with the contact structures E34A1, E34B1, and E343 to complete the predetermined test procedure, and the wafer testing device 1 is removed from the container. When chamber E311 is set (that is, after any step is removed), the following steps can be followed: A position test step SY1: the image capturing unit in a position detecting device E8 is used to capture images of a plurality of electrical connectors (2) and a plurality of chips (C) arranged on them to generate a captured image information ; A judging step SY2: judging whether the positions of the multiple chips relative to their corresponding electrical connectors meet the allowable deviation according to the captured image information. If the positions of multiple wafers relative to their corresponding electrical connection seats meet the allowable deviation, then the wafer testing device (1) is successively transferred to the next workstation, or transferred to another accommodating chamber (E311), This allows multiple wafers (C) to be tested in another temperature environment. The workstation is, for example, transferred to the sorting device (E5) for sorting operations. If the positions of the multiple chips relative to their corresponding electrical connection seats do not meet the allowable deviation, the chips are reinstalled.

在實際應用中,若多個晶片相對於其所對應的電連接座的位置不符合容許偏差量,中央控制裝置E1是控制移載設備E4 ,以將晶片測試裝置1移載至晶片安裝設備E2,再利用晶片安裝設備E2對特定的晶片C重新安裝,或者也可以是對所有的晶片C重新進行安裝。當然,也可以透過不同於晶片安裝設備E2的另一機械手臂等設備,對晶片測試裝置1上的晶片C重新進行安裝;又或者,中央控制裝置E1可以是控制移載設備E4,將晶片測試裝置1移載至一暫存區,並發出相關的提示訊號,以通知相關人員。在實際應用中,位置檢測設備E8也可以是具有晶片安裝裝置(圖未示,例如是包含有載台及機械手臂),而晶片安裝裝置可以直接對晶片測試裝置1上的至少一晶片C進行重新安裝作業。本實施例所舉的位置測試步驟SY1及判斷步驟SY2,可以是依據需求,安排於任何將晶片測試裝置1移出的步驟後。 In practical applications, if the positions of multiple chips relative to their corresponding electrical connectors do not meet the allowable deviation, the central control device E1 controls the transfer equipment E4 to transfer the wafer testing device 1 to the wafer mounting equipment E2 , And then use the wafer mounting equipment E2 to re-mount the specific wafer C, or it can also re-mount all the wafers C. Of course, it is also possible to re-install the wafer C on the wafer testing device 1 through another mechanical arm other than the wafer mounting equipment E2; or, the central control device E1 can control the transfer equipment E4 to test the wafer The device 1 is transferred to a temporary storage area, and relevant reminders are sent out to notify relevant personnel. In practical applications, the position detection equipment E8 may also have a wafer mounting device (not shown, for example, including a stage and a robot arm), and the wafer mounting device can directly perform at least one wafer C on the wafer testing device 1 Reinstall the job. The position test step SY1 and the judgment step SY2 mentioned in this embodiment can be arranged after any step of removing the wafer testing device 1 according to requirements.

請復參圖1及圖3,在實際應用中,晶片測試系統E還可以是包含有兩個影像擷取單元E91、E92,兩個影像擷取單元E91、E92連接中央控制裝置E1。影像擷取單元E91鄰近於晶片安裝設備E2設置,晶片安裝設備E2用來將晶片C設置於晶片測試裝置1上,而影像擷取單元E91則是用來擷取晶片測試裝置1及其所承載的晶片C的影像;中央控制裝置E1接收影像擷取單元E91所擷取的影像資訊後,將可判斷晶片測試裝置1上的晶片C是否被正確地安裝;若中央控制裝置E1判斷晶片C未正確地安裝於晶片測試裝置1上,則中央控制裝置E1可以是控制晶片安裝設備E2重新安裝該晶片C。Please refer to FIGS. 1 and 3 again. In practical applications, the chip testing system E may also include two image capturing units E91 and E92, and the two image capturing units E91 and E92 are connected to the central control device E1. The image capturing unit E91 is arranged adjacent to the chip mounting device E2. The chip mounting device E2 is used to set the chip C on the chip testing device 1, and the image capturing unit E91 is used to capture the chip testing device 1 and its carried After receiving the image information captured by the image capturing unit E91, the central control device E1 can determine whether the chip C on the chip testing device 1 is correctly installed; if the central control device E1 determines that the chip C is not If it is correctly installed on the wafer testing device 1, the central control device E1 can control the wafer mounting equipment E2 to reinstall the wafer C.

影像擷取單元E92鄰近於分類設備E5設置,而影像擷取單元E92用以擷取設置於不良品區或是良品區的晶片C的影像,而中央控制裝置E1能接收影像擷取單元E92所擷取的影像,以判斷晶片C是否被正確地安裝(例如是安裝於載盤)。若中央控制裝置E1判斷晶片C未被正確地安裝,中央控制裝置E1則可以是控制分類設備E5或是鄰近的相關機械手臂、晶片安裝設備E2等設備,重新安裝該晶片C。The image capturing unit E92 is disposed adjacent to the sorting equipment E5, and the image capturing unit E92 is used to capture the image of the chip C disposed in the defective product area or the good product area, and the central control device E1 can receive the image capturing unit E92. The captured image is used to determine whether the chip C is correctly installed (for example, it is installed on a carrier). If the central control device E1 determines that the chip C is not installed correctly, the central control device E1 can control the sorting equipment E5 or the neighboring related robot arm, the chip mounting equipment E2 and other equipment to reinstall the chip C.

請復參圖1,本發明公開的晶片測試系統E還可以是包含有一預先測試(Pre-Test)設備E6。預先測試設備E6連接中央控制裝置E1。預先測試設備E6可以是包含至少一電連接座(此電連接座的具體結構可以是如同圖5及圖6所示的電連接座2),預先測試設備E6的電連接座用以承載一個晶片C。預先測試設備E6能對晶片C進行一短路測試(Open/Short Test)及一漏電流測試(Leakage Test)。在具體的應用中,預先測試設備E6可以是包含有如同圖3所示的晶片測試裝置1,而預先測試設備E6可以是透過其所包含的如同圖3所示晶片測試裝置1對晶片C進行測試。Please refer to FIG. 1 again, the wafer test system E disclosed in the present invention may also include a pre-test (Pre-Test) device E6. The pre-test equipment E6 is connected to the central control device E1. The pre-test equipment E6 may include at least one electrical connector (the specific structure of the electrical connector may be the same as the electrical connector 2 shown in Figures 5 and 6), and the electrical connector of the pre-test equipment E6 is used to carry a chip C. The pre-test equipment E6 can perform an Open/Short Test and a Leakage Test on the chip C. In a specific application, the pre-testing equipment E6 may include the wafer testing device 1 shown in FIG. 3, and the pre-testing equipment E6 may perform the wafer C test through the included wafer testing device 1 shown in FIG. test.

在晶片測試系統E應用於測試記憶體,特別是NAND Flash的實施例中,透過上述具有前述晶片測試裝置1的預先測試設備E6,先對多個記憶體(即前述晶片C)進行短路測試及漏電流測試,將可大幅提升整體測試的效能。具體來說,記憶體於前述高溫測試、預燒測試、低溫測試及常溫測試中,必需耗費大量的時間進行,因此,透過預先測試設備E6先對記憶體進行初步的篩選,可以確保晶片測試裝置1上的每一個電連接座2是被有效地利用,而可避免未通過短路測試(Open/Short Test)及漏電流測試(Leakage Test)的記憶體在後續測試過程中佔用電連接座2的問題發生。在不同的應用中,預先測試設備E6除了對記憶體進行短路測試及漏電流測試外,預先測試設備E6還可以是依據需求,對記憶體進行特定的DC電性測試以及對記憶體的各個位置進行讀取作業(Read ID)。In the embodiment where the chip test system E is applied to test memory, especially NAND Flash, the above-mentioned pre-testing equipment E6 with the aforementioned chip testing device 1 first performs short-circuit testing on multiple memories (ie, the aforementioned chip C) and Leakage current test will greatly improve the overall test performance. Specifically, the memory must spend a lot of time in the aforementioned high temperature test, burn-in test, low temperature test and normal temperature test. Therefore, the preliminary screening of the memory through the pre-test equipment E6 can ensure the chip test device Each electrical connection socket 2 on 1 is effectively used, and it can prevent the memory that fails the short circuit test (Open/Short Test) and the leakage current test (Leakage Test) from occupying the electrical connection socket 2 during the subsequent test. The problem occurs. In different applications, in addition to the short-circuit test and leakage current test of the memory, the pre-test equipment E6 can also perform specific DC electrical tests on the memory and various locations of the memory according to requirements. Perform a read operation (Read ID).

在不同的實施例中,在分類步驟S7前,還可以是包含一最終測試步驟,其包含: 一安裝步驟:將多個晶片安裝於一最終測試設備的電連接座; 一測試步驟:控制所述最終測試設備,以對安裝於所述最終測試設備上的晶片進行一短路測試(Open/Short Test)及一漏電流測試(Leakage Test); 一判斷步驟:判斷設置於所述預先測試設備上的晶片是否通過短路測試及漏電流測試;其中,若所述晶片未通過所述短路測試或漏電流測試,則於所述分類步驟中將所述晶片移載至不良品區。 In different embodiments, before the classification step S7, a final test step may also be included, which includes: One installation step: install multiple chips on the electrical connection seat of a final test device; A test step: controlling the final test equipment to perform an Open/Short Test and a leakage current test (Leakage Test) on the chip installed on the final test equipment; A judging step: judging whether the chip set on the pre-testing device has passed the short circuit test and the leakage current test; wherein, if the chip fails the short circuit test or the leakage current test, then all the chips are classified in the classification step. The chip is transferred to the defective product area.

所述最終測試設備所包含的電連接座,可以是與圖5及圖6所示的電連接座2相同,於此不加以限制。透過最終測試設備的設置,可以輔助加速分類設備進行分類的速度。具體來說,分類設備在對各個晶片進行分類時,會依據晶片於各個測試過程中的測試結果,將各個晶片移載至特定的區域,因此,當其中一個晶片在測試過程中,發生不預期的損壞問題,而該晶片沒有通過任一個測試時,在沒有上述最終測試步驟的情況下,分類設備將浪費許多時間在對該晶片進行分類。在實際應用中,最終測試設備、晶片安裝設備E2及預先測試設備E6可以是利用同一個機械手臂,進行晶片的安裝作業,但不以此為限,最終測試設備、晶片安裝設備E2及預先測試設備E6也可以是分別具有獨立的機械手臂。The electrical connection base included in the final test equipment may be the same as the electrical connection base 2 shown in FIG. 5 and FIG. 6, and is not limited herein. The setting of the final test equipment can assist in accelerating the classification speed of the classification equipment. Specifically, when the sorting equipment classifies each wafer, it will transfer each wafer to a specific area based on the test results of the wafer during each test process. Therefore, when one of the wafers is in the test process, unexpected If the wafer fails to pass any test, the sorting equipment will waste a lot of time in sorting the wafer without the above-mentioned final test steps. In actual applications, the final test equipment, wafer mounting equipment E2 and pre-testing equipment E6 can use the same robotic arm to perform wafer mounting operations, but not limited to this, the final testing equipment, wafer mounting equipment E2 and pre-testing The equipment E6 can also have independent robotic arms.

如圖25所示,其顯示為本發明公開的晶片測試方法的第十實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述晶片測試方法最大不同之處在於:於晶片安裝步驟S1前還可以包含一預先測試步驟,其包含: 一安裝步驟S01:將多個記憶體(晶片C)由載盤上逐一取下,並安裝於一預先測試設備(E6)的電連接座; 一測試步驟S02:控制預先測試設備(E6),以對記憶體(晶片C)進行一短路測試及一漏電流測試; 一判斷步驟S03:若記憶體(晶片C)通過短路測試及漏電流測試則執行晶片安裝步驟S1;若記憶體(晶片C)未通過短路測試或漏電流測試,則將記憶體(晶片C)移載至不良品區(A2)。 As shown in FIG. 25, it shows a schematic flow chart of the tenth embodiment of the chip testing method disclosed in the present invention. The chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips). The biggest difference between the chip test method disclosed in this embodiment and the aforementioned chip test method is that a pre-test step may be included before the chip mounting step S1, which includes: An installation step S01: remove multiple memories (chips C) from the carrier one by one, and install them on the electrical connector of a pre-test equipment (E6); A test step S02: control the pre-test equipment (E6) to perform a short circuit test and a leakage current test on the memory (chip C); A judgment step S03: if the memory (chip C) passes the short circuit test and the leakage current test, then execute the chip mounting step S1; if the memory (chip C) fails the short circuit test or the leakage current test, then the memory (chip C) Transfer to the defective product area (A2).

如圖1所示,於實際應用中,預先測試設備E6可以是設置於一載盤入料設備E7及晶片安裝設備E2之間,而預先測試設備E6、載盤入料設備E7及晶片安裝設備E2之間可以是設置有至少一個機械手臂;機械手臂可以是將載盤入料設備E7的載盤上的記憶體(晶片)卸下後,先置放到預先測試設備E6的電連接座;若該記憶體(晶片)通過短路測試及漏電流測試,機械手臂將取下該晶片,並將該晶片安裝於設置在晶片安裝設備E2的晶片測試裝置1的電連接座2上;若該記憶體(晶片)未通過短路測試及漏電流測試,則機械手臂則將該記憶體(晶片),置放於另一不良品區A3;在實際應用中,晶片安裝設備E2及預先測試設備E6可以是使用同一個機械手臂來移載晶片,但不以此為限,在不同的實施例中,也可以是,晶片安裝設備E2及預先測試設備E6分別具有不同的機械手臂。As shown in Figure 1, in practical applications, the pre-testing equipment E6 can be set between a tray loading equipment E7 and the wafer mounting equipment E2, and the pre-testing equipment E6, tray loading equipment E7 and wafer mounting equipment There can be at least one robotic arm installed between E2; the robotic arm can be used to unload the memory (chip) on the tray of the tray loading equipment E7, and then first place it on the electrical connector of the pre-test equipment E6; If the memory (chip) passes the short-circuit test and the leakage current test, the robotic arm will remove the chip and mount the chip on the electrical connector 2 of the chip testing device 1 set in the chip mounting equipment E2; if the memory If the body (chip) fails the short circuit test and the leakage current test, the robotic arm places the memory (chip) in another defective product area A3; in actual applications, the chip mounting equipment E2 and the pre-test equipment E6 can The same robotic arm is used to transfer the wafer, but it is not limited to this. In different embodiments, it is also possible that the wafer mounting equipment E2 and the pre-testing equipment E6 have different robotic arms.

如圖26所示,在不同的實施例中,各個測試模組30在對其所連接的多個電連接座2上的晶片C完成預定測試程序後,測試模組30可以是將各個晶片C的測試結果資料C2及相對應的測試參數資料C3寫入各個晶片C中,以使各個晶片C中儲存有測試結果資料C2及測試參數資料C3。As shown in FIG. 26, in different embodiments, after each test module 30 completes a predetermined test procedure for the chip C on the plurality of electrical connection sockets 2 to which it is connected, the test module 30 may be The test result data C2 and the corresponding test parameter data C3 are written into each chip C, so that each chip C stores the test result data C2 and the test parameter data C3.

更進一步來說,所述測試結果資料C2例如可以是包含有:晶片C分別於高溫測試、預燒測試、低溫測試及常溫測試中的測試狀況,或者,也可以是僅記錄晶片C是否通過高溫測試、是否通過預燒測試、是否通過低溫測試及是否通過常溫測試。Furthermore, the test result data C2 may include, for example, the test conditions of the chip C in the high temperature test, the burn-in test, the low temperature test and the normal temperature test respectively, or it may only record whether the chip C passes the high temperature test. Test, whether to pass the burn-in test, whether to pass the low temperature test, and whether to pass the normal temperature test.

測試參數資料C3例如可以是包含有:晶片測試裝置1的識別編號(ID Number)、測試模組30的識別編號、電連接座2的識別編號、環境控制設備E3的識別編號及其容置室E311的識別編號、高溫測試時的溫度值、高溫測試的時間、預燒測試時的溫度值、預燒測試的時間、低溫測試時的溫度值、低溫測試的時間、常溫測試時的溫度值及常溫測試的時間等。The test parameter data C3 may include, for example, the identification number (ID Number) of the wafer testing device 1, the identification number of the test module 30, the identification number of the electrical connection base 2, the identification number of the environmental control equipment E3 and its accommodation chamber. E311 identification number, temperature value during high temperature test, time of high temperature test, temperature value during burn-in test, time of burn-in test, temperature value during low temperature test, time of low temperature test, temperature value during normal temperature test and Time of room temperature test, etc.

透過上述使測試模組30將晶片C的測試結果資料C2及測試參數資料寫入晶片C中的設計,當任一個晶片C交到消費者手上時,消費者可以是透過相關的設備讀取晶片C內所儲存的資料,來確認其生產時所進行的檢測狀態;且相關生產人員在接收到任一個由消費者所退回的晶片C時,亦可以透過讀取晶片C內儲存的測試結果資料C2及測試參數資料,來快速地追溯該晶片C的檢測歷程,從而可以有效地幫助生產人員,找出檢測流程中可能存在的缺失。Through the above design that the test module 30 writes the test result data C2 and test parameter data of the chip C into the chip C, when any chip C is delivered to the consumer, the consumer can read it through the relevant equipment The data stored in the chip C can be used to confirm the inspection status during its production; and when the relevant production personnel receive any chip C returned by the consumer, they can also read the test results stored in the chip C Data C2 and test parameter data are used to quickly trace the inspection history of the chip C, which can effectively help the production personnel to find possible defects in the inspection process.

如圖27所示,其顯示為本發明公開的晶片測試方法的第十一實施例的流程示意圖,上述晶片測試系統E可以利用此晶片測試方法,對多個記憶體(即前述晶片)進行測試。本實施例所公開的晶片測試方法與前述晶片測試方法最大不同之處在於:在各個測試步驟後還可以是包含以下步驟: 一測試結果寫入步驟SW:將各個記憶體完成預定測試程序後的測試結果資料,及相對應的測試參數資料,儲存於各個記憶體中。 As shown in FIG. 27, which shows a schematic flow chart of the eleventh embodiment of the chip testing method disclosed in the present invention, the above-mentioned chip testing system E can use this chip testing method to test multiple memories (ie, the aforementioned chips) . The biggest difference between the wafer test method disclosed in this embodiment and the foregoing wafer test method is that after each test step, the following steps may be included: A test result writing step SW: store the test result data of each memory after the predetermined test procedure and the corresponding test parameter data are stored in each memory.

於上述實施例中,是以各個測試模組30對其所連接的記憶體完成任一個測試(例如是包含高溫測試、預燒測試、低溫測試、常溫測試)時,就馬上將相對應的測試結果資料C2及測試參數資料C3儲存於記憶體中,但於實際應用中,不以此為限。In the above embodiment, when each test module 30 completes any test (for example, including high temperature test, burn-in test, low temperature test, and normal temperature test) on the memory connected to it, the corresponding test is immediately performed The result data C2 and the test parameter data C3 are stored in the memory, but in practical applications, it is not limited to this.

請復參圖4,在不同應用中,各個測試模組30可以包含有一處理單元5及至少一儲存單元6。各個測試模組30在對其所連接的多個電連接座2上的記憶體完成任一個測試(例如是高溫測試、預燒測試、低溫測試及常溫測試)時,也可以是不直接將相對應的測試結果資料C2及測試參數資料C3儲存於記憶體中,而各個測試模組30是將各個晶片C的測試結果資料C2及其測試參數資料C3儲存於各個測試模組30的儲存單元6中。在另一實施例中,晶片測試裝置1可以是包含有一儲存單元,而各個測試模組30可以是將其所連接的晶片C的測試結果資料C2及其測試參數資料C3,儲存於晶片測試裝置1的儲存單元中。換言之,晶片測試裝置1可以包含有儲存單元6,而儲存單元6可以是依據需求,設置於各個測試模組30中,或者儲存單元6也可以是獨立於多個測試模組30設置。Please refer to FIG. 4 again. In different applications, each test module 30 may include a processing unit 5 and at least one storage unit 6. When each test module 30 completes any test (for example, a high temperature test, a burn-in test, a low temperature test, and a normal temperature test) on the memory on the multiple electrical connection sockets 2 to which it is connected, it may not directly compare the phases. The corresponding test result data C2 and test parameter data C3 are stored in the memory, and each test module 30 stores the test result data C2 of each chip C and the test parameter data C3 in the storage unit 6 of each test module 30 in. In another embodiment, the chip test device 1 may include a storage unit, and each test module 30 may store the test result data C2 and its test parameter data C3 of the chip C connected to the chip test device 1 in the storage unit. In other words, the chip testing apparatus 1 may include a storage unit 6, and the storage unit 6 may be provided in each test module 30 according to requirements, or the storage unit 6 may also be provided independently of a plurality of test modules 30.

承上,當晶片測試裝置1所承載的記憶體,依據需求完成所有測試(例如是預燒測試及高溫測試,或預燒測試、高溫測試、低溫測試及常溫測試)時,中央控制裝置E1可以是控制一讀寫設備(圖未示),與晶片測試裝置1的供電構件4的多個連接端子相連接,以將晶片測試裝置1的儲存單元或是各個測試模組30的儲存單元6,所儲存的測試結果資料C2及測試參數資料C3讀出,並透過讀寫設備將各個測試結果資料C2及測試參數資料C3寫入相對應的記憶體中。In addition, when the memory carried by the chip testing device 1 completes all tests (such as burn-in test and high temperature test, or burn-in test, high temperature test, low temperature test and normal temperature test) according to requirements, the central control device E1 can It controls a read-write device (not shown in the figure), which is connected to the multiple connection terminals of the power supply member 4 of the chip testing device 1 to connect the storage unit of the chip testing device 1 or the storage unit 6 of each test module 30, The stored test result data C2 and test parameter data C3 are read out, and each test result data C2 and test parameter data C3 are written into the corresponding memory through the read-write device.

在另一實施例中,晶片測試裝置1也可以是包含有一無線傳輸單元7,無線傳輸單元7連接處理單元(圖未示)。當各個測試模組30對其所連接的多個電連接座2上的晶片完成預定測試程序時,各個測試模組30將對應產生測試結果資料C2及測試參數資料C3。處理單元能接收各個測試模組30所傳遞的測試結果資料C2及測試參數資料C3,且處理單元能控制無線傳輸單元7將測試結果資料C2及多筆測試參數資料C3以無線的方式傳遞至一外部電子裝置,所述外部電子裝置例如是中央控制裝置E1,而後,中央控制裝置E1可以再透過讀寫設備將各個測試結果資料C2及測試參數資料C3寫入相對應的記憶體中。In another embodiment, the wafer testing device 1 may also include a wireless transmission unit 7 connected to the processing unit (not shown). When each test module 30 completes a predetermined test procedure for the chips on the plurality of electrical connection sockets 2 to which it is connected, each test module 30 will correspondingly generate test result data C2 and test parameter data C3. The processing unit can receive the test result data C2 and the test parameter data C3 transmitted by each test module 30, and the processing unit can control the wireless transmission unit 7 to wirelessly transmit the test result data C2 and multiple test parameter data C3 to a An external electronic device. The external electronic device is, for example, a central control device E1. Then, the central control device E1 can write each test result data C2 and test parameter data C3 into the corresponding memory through a read-write device.

如圖28所示,其顯示為本發明公開的晶片測試方法的第十二實施例的流程示意圖。本實施例與圖16所示的流程示意圖,最大的差異在於:於分類步驟S7後可以是包含有: 一測試結果寫入步驟S8:將各個記憶體完成預定測試程序後的測試結果資料,及相對應的測試參數資料,儲存於各個記憶體中。 As shown in FIG. 28, it is a schematic flowchart of the twelfth embodiment of the wafer testing method disclosed in the present invention. The biggest difference between this embodiment and the flowchart shown in FIG. 16 is that after the classification step S7, it may include: A test result writing step S8: Store the test result data of each memory after the predetermined test procedure and the corresponding test parameter data are stored in each memory.

具體來說,當晶片測試裝置1所承載的記憶體,依據需求完成所有測試(例如是預燒測試及高溫測試,或預燒測試、高溫測試、低溫測試、常溫測試)時,中央控制裝置E1可以是先控制分類設備E5,依據各個記憶體的測試結果,對各個記憶體進行分類。而後,中央控制裝置E1再控制相關的讀寫設備,對已被分類至良品區A1的記憶體進行相關讀寫作業,以將其所對應的測試結果資料C2及測試參數資料C3儲存於各記憶體中。也就是說,只有被區分為良品的記憶體,其內部才儲存有測試結果資料C2及測試參數資料C3。Specifically, when the memory carried by the chip testing device 1 completes all tests (for example, burn-in test and high temperature test, or burn-in test, high temperature test, low temperature test, normal temperature test) according to requirements, the central control device E1 It can first control the classification device E5, and classify each memory according to the test result of each memory. Then, the central control device E1 controls the related reading and writing equipment to perform related reading and writing operations on the memory that has been classified into the good product area A1 to store the corresponding test result data C2 and test parameter data C3 in each memory Body. In other words, only the memory that is classified as a good product can store the test result data C2 and the test parameter data C3 inside.

如圖29所示,其顯示為本發明公開的晶片測試方法的第十三實施例的流程示意圖。本實施例與圖16所示的流程示意圖,最大的差異在於:於分類步驟S7前可以是包含有: 一測試結果寫入步驟S7A:將通過各個預定測試程序的記憶體,所對應的測試結果資料及測試參數資料,儲存於對應的記憶體中。 As shown in FIG. 29, it is a schematic flowchart of the thirteenth embodiment of the wafer testing method disclosed in the present invention. The biggest difference between this embodiment and the flowchart shown in FIG. 16 is that before the classification step S7, it may include: A test result writing step S7A: Store the corresponding test result data and test parameter data in the memory that has passed each predetermined test procedure in the corresponding memory.

具體來說,當晶片測試裝置1所承載的記憶體,依據需求完成並通過所有測試(例如是預燒測試及高溫測試,或預燒測試、高溫測試、低溫測試、常溫測試)時,晶片測試裝置1會將該記憶體所對應的測試結果及相關的測試參數資料寫入該記憶體中;相反地,若記憶體未通過其中至少一個測試時,晶片測試裝置1則不會將該記憶體所對應的任何測試相關資料寫入於該記憶體中。如此,在分類步驟S7中,分類設備可以是透過判斷記憶體中是否寫入有上述任何測試相關資料,來快速判斷該記憶體是否通過測試,若分類設備判斷記憶體中沒有被寫入上述資料,分類設備則可以是直接將該記憶體分類至不良品區。Specifically, when the memory carried by the chip testing device 1 is completed and passed all tests (for example, burn-in test and high temperature test, or burn-in test, high temperature test, low temperature test, and normal temperature test) according to requirements, the chip test The device 1 writes the test results and related test parameter data corresponding to the memory into the memory; on the contrary, if the memory fails at least one of the tests, the chip testing device 1 will not write the memory Any corresponding test-related data is written in the memory. In this way, in the classification step S7, the classification device can quickly determine whether the memory has passed the test by determining whether any of the above-mentioned test-related data is written in the memory, and if the classification device determines that the above-mentioned data is not written in the memory , The classification device can directly classify the memory to the defective area.

請參閱圖30,在實際應用中,晶片測試系統E的中央控制裝置E1可以是包含有一主控裝置E11(Master control device)、一晶片測試控制裝置E12、一環境狀態控制裝置E13及一移載控制裝置E14。關於晶片測試控制裝置E12、環境狀態控制裝置E13及移載控制裝置E14的數量,可以是依據需求變化,不以單一個為限。Please refer to FIG. 30. In practical applications, the central control device E1 of the chip test system E may include a master control device E11 (Master control device), a chip test control device E12, an environmental state control device E13, and a transfer Control device E14. Regarding the number of the wafer test control device E12, the environmental state control device E13, and the transfer control device E14, it can be changed according to demand, and is not limited to a single one.

在晶片測試系統E具有單一個晶片測試控制裝置E12的實施例中,晶片測試控制裝置E12可以是用以控制所有晶片測試裝置1、預先測試設備E6及最終測試設備作動,以對多個晶片進行各種測試作業。簡單來說,晶片測試控制裝置E12可以是控制任何用來測試晶片的設備。在晶片測試系統E包含有多個晶片測試控制裝置E12的實施例中,各個晶片測試控制裝置E12例如可以是對應控制至少一個晶片測試裝置1;而,不同的晶片測試控制裝置E12可以是對應控制其所連接的晶片測試裝置1進行不同的測試作業。In the embodiment where the wafer test system E has a single wafer test control device E12, the wafer test control device E12 may be used to control the actions of all the wafer test devices 1, the pre-test equipment E6, and the final test equipment to perform multiple wafer tests. Various test jobs. In simple terms, the wafer test control device E12 can be used to control any equipment used to test wafers. In an embodiment in which the wafer test system E includes multiple wafer test control devices E12, each wafer test control device E12 may correspondingly control at least one wafer test device 1; and different wafer test control devices E12 may correspondingly control The wafer test device 1 connected to it performs different test operations.

在晶片測試系統E具有單一個環境狀態控制裝置E13的實施例中,環境狀態控制裝置E13可以是用以控制任一環境控制設備E3作動,以控制任一個環境控制設備E3作動,舉例來說,環境狀態控制裝置E13可以控制任一個環境控制設備E3的溫度調節裝置E34、抽氣裝置E37、升降裝置E38、限位裝置E39作動。在晶片測試系統E包含有多個環境狀態控制裝置E13的實施例中,各個環境狀態控制裝置E13例如可以是對應控制至少一個環境控制設備E3;而,不同的環境狀態控制裝置E13可以是對應控制其所連接的環境控制設備E3進行完全不同的作動。值得一提的是,各個環境狀態控制裝置E13可以是控制任一環境控制設備E3中個各個構件的作動,例如各個環境控制設備E3中的各個感應器的作動,以及各個感應器感應的結果。In the embodiment where the wafer test system E has a single environmental state control device E13, the environmental state control device E13 may be used to control the action of any environmental control device E3 to control the action of any environmental control device E3, for example, The environmental state control device E13 can control the action of the temperature adjustment device E34, the air extraction device E37, the lifting device E38, and the limit device E39 of any environmental control device E3. In an embodiment in which the wafer test system E includes multiple environmental state control devices E13, each environmental state control device E13 may correspondingly control at least one environmental control device E3; and different environmental state control devices E13 may correspondingly control The environmental control equipment E3 connected to it performs completely different actions. It is worth mentioning that each environmental state control device E13 can control the action of each component in any environmental control device E3, such as the action of each sensor in each environmental control device E3, and the result of each sensor sensing.

在晶片測試系統E具有單一個移載控制裝置E14的實施例中,移載控制裝置E14可以是用以控制晶片安裝設備E2、位置檢測設備E8、移載設備E4、分類設備E5。簡單來說,移載控制裝置E14可以是控制任何用來移載晶片測試裝置1或是晶片的設備。當然,在晶片測試系統E包含有多個移載控制裝置E14的實施例中,多個移載控制裝置E14可以是依據需求分類,而對應控制不同的設備,舉例來說,其中一個移載控制裝置E14可以是專門用來控制移載晶片測試裝置1的設備,其中一個移載控制裝置E14則可以是專門用來控制移載晶片的設備。In the embodiment where the wafer test system E has a single transfer control device E14, the transfer control device E14 may be used to control the wafer mounting equipment E2, the position detection equipment E8, the transfer equipment E4, and the sorting equipment E5. To put it simply, the transfer control device E14 can be used to control any equipment used to transfer the wafer test device 1 or wafers. Of course, in the embodiment where the wafer test system E includes multiple transfer control devices E14, the multiple transfer control devices E14 can be classified according to requirements, and correspondingly control different equipment, for example, one of the transfer control devices E14 The device E14 may be a device specifically used to control the wafer transfer test device 1, and one of the transfer control devices E14 may be a device specifically used to control wafer transfer.

主控裝置E11連接晶片測試控制裝置E12、環境狀態控制裝置E13及移載控制裝置E14,而主控裝置E11可以是用以控制晶片測試控制裝置E12、環境狀態控制裝置E13及移載控制裝置E14彼此間的協作。在具體的應用中,主控裝置E11、晶片測試控制裝置E12、環境狀態控制裝置E13及移載控制裝置E14皆可以是由至少一個電腦設備、伺服器等裝置組成,但不以此為限。The main control device E11 is connected to the chip test control device E12, the environmental state control device E13, and the transfer control device E14, and the main control device E11 can be used to control the chip test control device E12, the environmental state control device E13, and the transfer control device E14 Collaboration between each other. In specific applications, the main control device E11, the chip test control device E12, the environmental state control device E13, and the transfer control device E14 may all be composed of at least one computer device, a server, etc., but it is not limited thereto.

透過使晶片測試系統E包含有主控裝置E11、晶片測試控制裝置E12、環境狀態控制裝置E13及移載控制裝置E14的設計,晶片測試系統E在生產製造過程中,將相對容易進行相關的控制整合,且晶片測試系統E在後續運作、檢修時,也比較容易快速查找出問題。By designing the wafer test system E to include the main control device E11, the wafer test control device E12, the environmental state control device E13, and the transfer control device E14, the wafer test system E will be relatively easy to perform related control during the manufacturing process Integration, and the chip test system E is easier to quickly find problems during subsequent operation and maintenance.

特別說明的是,在前述任一實施中,晶片測試裝置1不侷限於在測試步驟時被供電,晶片測試裝置1可以是在設置於容置室E311後及執行測試步驟之間的任何時間點被供電,而晶片測試裝置1不侷限於在測試步驟時才被供電。換言之,在實際應用中,可以是使晶片測試裝置1在設置於容置室E311中時即立刻被供電,或者,也可以使晶片測試裝置1在執行測試步驟時才被供電。In particular, in any of the foregoing implementations, the wafer testing device 1 is not limited to being powered during the testing step, and the wafer testing device 1 can be installed in the accommodating chamber E311 and at any point in time between the testing steps. Power is supplied, and the wafer testing device 1 is not limited to being powered during the test step. In other words, in practical applications, the wafer testing device 1 can be powered immediately when it is installed in the accommodating chamber E311, or the wafer testing device 1 can also be powered only when the testing step is performed.

另外,需強調的是,在上述任何供電構件包含有多個連接端子的實施例中,所述連接端子及容置室端子皆可以直接替換為接收天線及發射天線。當然,由於接收天線及發射天線是以無線的方式進行電力傳輸,因此,在直接使連接端子及容置室端子替換為接收天線及發射天線時,則可忽略在上述部份實施例中,使連接端子及容置室端子相接觸或相分離的相關流程步驟。In addition, it should be emphasized that in any of the above embodiments in which the power supply member includes multiple connection terminals, the connection terminals and the accommodation chamber terminals can be directly replaced with receiving antennas and transmitting antennas. Of course, since the receiving antenna and the transmitting antenna are used for wireless power transmission, when directly replacing the connecting terminal and the receiving room terminal with the receiving antenna and the transmitting antenna, it can be ignored in some of the above embodiments. Relevant process steps of contacting or separating the connecting terminal and the accommodating chamber terminal.

綜上所述,本發明所公開的晶片測試系統、晶片測試裝置,及適用於該晶片測試系統的晶片測試方法,相較於現有的晶片測試設備,不但具有成本的優勢,且具有更好的測試效率。另外,本發明所公開的晶片測試系統,是使多個晶片設置於晶片測試裝置上,而後是移載晶片測試裝置,以使晶片處於不同的溫度環境中進行相關的測試作業,因此,晶片在不同的溫度環境中進行測試的過程中,皆是設置於同一個晶片測試裝置上,而晶片在整個測試過程中,不會被反覆地拆卸、安裝,而晶片將不易發生不預期的損壞等問題。相反的,現有的記憶體檢測設備,是將記憶體反覆地拆卸、安裝於不同溫度環境中的電連接座上,因此,記憶體在經過反覆的拆卸、安裝後,容易發生不預期的損壞的問題。In summary, the wafer testing system, wafer testing device, and wafer testing method suitable for the wafer testing system disclosed in the present invention not only have a cost advantage, but also have better advantages than existing wafer testing equipment. Test efficiency. In addition, the wafer testing system disclosed in the present invention sets a plurality of wafers on the wafer testing device, and then transfers the wafer testing device to place the wafers in different temperature environments for related testing operations. Therefore, the wafers In the process of testing in different temperature environments, they are all set on the same chip testing device, and the chip will not be repeatedly disassembled and installed during the entire test process, and the chip will not be prone to unexpected damage and other problems . On the contrary, the existing memory testing equipment repeatedly disassembles and installs the memory on the electrical connector in different temperature environments. Therefore, the memory is prone to unexpected damage after repeated disassembly and installation. problem.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the patent scope of the present invention. Inside.

E:晶片測試系統 E1:中央控制裝置 E11:主控裝置 E12:晶片測試控制裝置 E13:環境狀態控制裝置 E14:移載控制裝置 E2:晶片安裝設備 E3:環境控制設備 E31:設備本體 E311:容置室 E32:第二資料傳輸端子 E33:容置室端子 E34:溫度調節裝置 E34A:加熱裝置 E34A1:高溫接觸結構 E34B:致冷裝置 E34B1:低溫接觸結構 E341:加熱器 E342:致冷器 E343:接觸結構 E344:流道 E345:流體入口 E346:流體出口 E35:罩體 E351:凹槽 E352:容置開孔 E353:抽氣孔 E36:蓋體 E37:抽氣裝置 E38:升降裝置 E39:限位裝置 E4:移載設備 E5:分類設備 E6:預先測試設備 E7:載盤入料設備 E8:位置檢測設備 E91:影像擷取單元 E92:影像擷取單元 1:晶片測試裝置 10:電路板 101:第一側面 102:第二側面 2:電連接座 20:探針組件 201:針體 202:彈簧 21:連接座本體 21A:開孔 21B:容置槽 21C:鎖孔 211:頂壁 2111:外側面 2112:內側面 212:環側壁 22:升降結構 22A:連接孔 22B:晶片容槽 221:基部 222:承載部 223:限位部 23:支撐結構 231:底座結構 232:輔助結構 24:彈性組件 3:控制機組 30:測試模組 31:機殼 4:供電構件 5:處理單元 6:儲存單元 7:無線傳輸單元 8:第一資料傳輸端子 A1:良品區 A2:不良品區 A3:不良品區 C:晶片 C1:電連接部 C2:測試結果資料 C3:測試參數資料 SP1:容置空間 SP2:封閉空間 S:間隙E: Wafer test system E1: Central control device E11: Master control device E12: Wafer test control device E13: Environmental status control device E14: Transfer control device E2: Chip mounting equipment E3: Environmental control equipment E31: Equipment body E311: containing room E32: The second data transmission terminal E33: Terminal E34: Temperature adjustment device E34A: heating device E34A1: High temperature contact structure E34B: Refrigerator E34B1: Low temperature contact structure E341: heater E342: Refrigerator E343: Contact structure E344: runner E345: fluid inlet E346: fluid outlet E35: Cover E351: Groove E352: containment opening E353: Vent E36: Lid E37: Air extraction device E38: Lifting device E39: limit device E4: Transfer equipment E5: Sorting equipment E6: Pre-test equipment E7: Disk loading equipment E8: Location detection equipment E91: Image capture unit E92: Image capture unit 1: Wafer testing device 10: Circuit board 101: first side 102: second side 2: Electrical connection seat 20: Probe assembly 201: Needle Body 202: Spring 21: Connection base body 21A: Opening 21B: holding tank 21C: keyhole 211: top wall 2111: outer side 2112: inside 212: Ring sidewall 22: Lifting structure 22A: connecting hole 22B: wafer container 221: base 222: Bearing Department 223: Limit 23: Supporting structure 231: base structure 232: auxiliary structure 24: Elastic component 3: control unit 30: Test module 31: Chassis 4: Power supply component 5: Processing unit 6: Storage unit 7: Wireless transmission unit 8: The first data transmission terminal A1: Good product area A2: Defective product area A3: Defective product area C: chip C1: Electrical connection part C2: Test result data C3: Test parameter data SP1: Housing space SP2: enclosed space S: gap

圖1為本發明公開的晶片測試系統的示意圖。FIG. 1 is a schematic diagram of the wafer testing system disclosed in the present invention.

圖2為本發明公開的晶片測試系統的方塊示意圖。FIG. 2 is a block diagram of the wafer testing system disclosed in the present invention.

圖3為本發明公開的晶片測試系統的晶片測試裝置的示意圖。FIG. 3 is a schematic diagram of a wafer testing device of the wafer testing system disclosed in the present invention.

圖4為本發明公開的晶片測試系統的晶片測試裝置的方塊示意圖。4 is a block diagram of the wafer testing device of the wafer testing system disclosed in the present invention.

圖5為本發明公開的晶片測試系統的晶片測試裝置的電連接座的示意圖。5 is a schematic diagram of the electrical connection seat of the wafer testing device of the wafer testing system disclosed in the present invention.

圖6為本發明公開的晶片測試系統的晶片測試裝置的電連接座的剖面分解示意圖。6 is a schematic cross-sectional exploded view of the electrical connector of the wafer testing device of the wafer testing system disclosed in the present invention.

圖7為本發明公開的晶片測試系統的晶片測試裝置的電連接座未設置有晶片的剖面示意圖。7 is a schematic cross-sectional view of the electrical connector of the wafer testing device of the wafer testing system disclosed in the present invention without a wafer.

圖8為本發明公開的晶片測試系統的晶片測試裝置的電連接座設置有晶片的剖面示意圖。FIG. 8 is a schematic cross-sectional view of the electrical connection seat of the wafer testing device of the wafer testing system disclosed by the present invention provided with a wafer.

圖9為本發明公開的晶片測試系統的環境控制設備的示意圖。FIG. 9 is a schematic diagram of the environmental control equipment of the wafer test system disclosed in the present invention.

圖10為本發明公開的晶片測試系統的環境控制設備與中央控制裝置的方塊示意圖。10 is a block diagram of the environmental control equipment and the central control device of the wafer test system disclosed in the present invention.

圖11為本發明公開的晶片測試系統的溫度調節裝置及蓋體的組裝示意圖。11 is a schematic diagram of the assembly of the temperature adjusting device and the cover of the wafer test system disclosed in the present invention.

圖12、13為本發明公開的晶片測試系統的溫度調節裝置及蓋體的分解示意圖。12 and 13 are exploded schematic diagrams of the temperature adjusting device and the cover of the wafer testing system disclosed in the present invention.

圖14為本發明公開的晶片測試系統的溫度調節裝置及蓋體設置於晶片測試裝置上的剖面示意圖。14 is a schematic cross-sectional view of the temperature adjusting device and the cover of the wafer testing system disclosed in the present invention being arranged on the wafer testing device.

圖15為圖14的局部放大示意圖。Fig. 15 is a partial enlarged schematic diagram of Fig. 14.

圖16為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第一實施例的流程示意圖。FIG. 16 is a schematic flow chart of the first embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖17為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第二實施例的流程示意圖。FIG. 17 is a schematic flowchart of a second embodiment of the wafer testing system disclosed in the present invention to test multiple wafers by using the wafer testing method.

圖18為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第三實施例的流程示意圖。FIG. 18 is a schematic flowchart of a third embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖19為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第四實施例的流程示意圖。FIG. 19 is a schematic flowchart of a fourth embodiment of the wafer testing system disclosed in the present invention to test multiple wafers by using the wafer testing method.

圖20為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第五實施例的流程示意圖。FIG. 20 is a schematic flowchart of a fifth embodiment of the wafer testing system disclosed in the present invention to test multiple wafers by using the wafer testing method.

圖21為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第六實施例的流程示意圖。FIG. 21 is a schematic flowchart of a sixth embodiment of the wafer testing system disclosed in the present invention to test multiple wafers by using a wafer testing method.

圖22為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第七實施例的流程示意圖。FIG. 22 is a schematic flowchart of a seventh embodiment of the wafer testing system disclosed in the present invention to test multiple wafers by using the wafer testing method.

圖23為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第八實施例的流程示意圖。FIG. 23 is a schematic flow chart of the eighth embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖24為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第九實施例的流程示意圖。24 is a schematic flowchart of a ninth embodiment of the wafer testing system disclosed in the present invention to test multiple wafers using a wafer testing method.

圖25為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第十實施例的流程示意圖。FIG. 25 is a schematic flowchart of a tenth embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖26為記憶體通過本發明公開的晶片測試系統測試後的方塊示意圖。26 is a schematic block diagram of the memory after passing the test of the chip test system disclosed in the present invention.

圖27為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第十一實施例的流程示意圖。FIG. 27 is a schematic flow chart of the eleventh embodiment of the wafer testing system using the wafer testing method to test multiple wafers according to the present invention.

圖28為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第十二實施例的流程示意圖。FIG. 28 is a schematic flow chart of the twelfth embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖29為本發明公開的晶片測試系統利用晶片測試方法對多個晶片進行測試的第十三實施例的流程示意圖。FIG. 29 is a schematic flowchart of the thirteenth embodiment of the wafer testing system for testing multiple wafers by the wafer testing method disclosed in the present invention.

圖30為本發明公開的中央控制裝置的方塊示意圖。Figure 30 is a block diagram of the central control device disclosed in the present invention.

E:晶片測試系統 E: Wafer test system

E2:晶片安裝設備 E2: Chip mounting equipment

E3:環境控制設備 E3: Environmental control equipment

E4:移載設備 E4: Transfer equipment

E5:分類設備 E5: Sorting equipment

E6:預先測試設備 E6: Pre-test equipment

E7:載盤入料設備 E7: Disk loading equipment

E8:位置檢測設備 E8: Location detection equipment

E91:影像擷取單元 E91: Image capture unit

E92:影像擷取單元 E92: Image capture unit

A1:良品區 A1: Good product area

A2:不良品區 A2: Defective product area

A3:不良品區 A3: Defective product area

Claims (13)

一種晶片測試系統,其用以對多個晶片進行測試,所述晶片測試系統包含: 一中央控制裝置; 至少一晶片測試裝置,其包含多個電連接座,各個所述電連接座用以承載一個所述晶片,所述晶片測試裝置能被所述中央控制裝置控制而對其所承載的多個所述晶片進行一預定測試程序,所述晶片測試裝置具有至少一供電構件; 一晶片安裝設備,其能被所述中央控制裝置控制,而將多個所述晶片安裝於所述晶片測試裝置的多個電連接座上; 至少一環境控制設備,所述環境控制設備連接所述中央控制裝置,各個所述環境控制設備包含: 一設備本體,其包含多個容置室,所述設備本體連接一供電設備,各個所述容置室能容置所述晶片測試裝置,所述設備本體具有多個供電構件; 多個溫度調節裝置,各個所述容置室中設置有一個所述溫度調節裝置;各個所述溫度調節裝置能受所述中央控制裝置控制,而使相對應的所述容置室中的所述晶片測試裝置的多個所述電連接座上的所述晶片的周圍溫度到達一預定溫度; 一移載設備,其能被所述中央控制裝置控制而載運所述晶片測試裝置,以使所述晶片測試裝置於所述晶片安裝設備、多個所述環境控制設備的多個所述容置室及所述分類設備之間移動;其中,當所述移載設備將承載有多個所述晶片的所述晶片測試裝置,由所述晶片安裝設備移載至其中一個所述環境控制設備的其中一個所述容置室中時,所述供電設備能通過所述設備本體的供電構件及所述晶片測試裝置的供電構件,而提供電力給所述晶片測試裝置;當所述晶片測試裝置被供電,且所述溫度調節裝置使所述晶片測試裝置上的多個所述晶片的周圍溫度到達所述預定溫度時,所述中央控制裝置能控制所述晶片測試裝置,對其所承載的多個所述晶片進行一預定測試程序; 一分類設備,所述分類設備能受所述中央控制裝置控制,而將多個所述晶片由所述晶片測試裝置的多個所述電連接座卸下,且所述分類設備能依據各個所述晶片完成所述預定測試程序後的測試結果,將各個所述晶片置放於一良品區或一不良品區; 其中,當所述晶片測試裝置對其所承載的多個所述晶片完成所述預定測試程序時,所述中央控制裝置將控制所述移載設備,以將所述晶片測試裝置由所述容置室中移載至所述分類設備。 A wafer testing system for testing multiple wafers, the wafer testing system comprising: A central control device; At least one chip testing device, which includes a plurality of electrical connection seats, each of the electrical connection seats is used to carry one chip, and the chip testing device can be controlled by the central control device to control the plurality of electrical connection seats it carries. The chip performs a predetermined test procedure, and the chip test device has at least one power supply component; A chip mounting device, which can be controlled by the central control device to mount a plurality of the chips on a plurality of electrical connection seats of the chip testing device; At least one environmental control device, the environmental control device is connected to the central control device, and each of the environmental control devices includes: An equipment body comprising a plurality of accommodating chambers, the equipment body is connected to a power supply device, each of the accommodating chambers can accommodate the wafer testing device, and the equipment body has a plurality of power supply members; A plurality of temperature adjustment devices, each of the accommodating chambers is provided with one temperature adjustment device; each of the temperature adjustment devices can be controlled by the central control device, so that all of the corresponding accommodating chambers The ambient temperature of the wafer on the plurality of electrical connection seats of the wafer testing device reaches a predetermined temperature; A transfer equipment, which can be controlled by the central control device to carry the wafer testing device, so that the wafer testing device is placed in the wafer mounting equipment and the multiple accommodating devices of the multiple environmental control equipment Between the chamber and the sorting equipment; wherein, when the transfer equipment transfers the wafer testing device carrying a plurality of the wafers from the wafer mounting equipment to one of the environmental control equipment When one of the accommodating chambers is in, the power supply device can provide power to the wafer test device through the power supply member of the device body and the power supply member of the wafer test device; when the wafer test device is When power is supplied and the temperature adjustment device makes the surrounding temperature of the plurality of wafers on the wafer test device reach the predetermined temperature, the central control device can control the wafer test device to control the amount of the wafer Performing a predetermined test procedure on each of the chips; A sorting device, the sorting device can be controlled by the central control device, and a plurality of the wafers are unloaded from the plurality of the electrical connection seats of the wafer testing device, and the sorting device can be based on each Placing each of the chips in a good product area or a defective product area according to the test result after the chip has completed the predetermined test procedure; Wherein, when the wafer testing device completes the predetermined test procedure for the multiple wafers it carries, the central control device will control the transfer equipment to transfer the wafer testing device from the container. The storage room is transferred to the classification equipment. 如請求項1所述的晶片測試系統,其中,所述晶片測試裝置還包含: 一電路板,其彼此相反的兩側分別定義為一第一側面及一第二側面; 多個所述電連接座,其固定設置於所述電路板的所述第一側面,各個所述電連接座用以承載至少一個所述晶片;多個所述電連接座區隔為多個電連接座群組,各個所述電連接座群組包含至少一所述電連接座; 一控制機組,所述控制機組設置於所述電路板的所述第二側面,所述控制機組包含多個測試模組,多個所述測試模組與多個所述電連接座群組相連接,而各個所述測試模組與相對應的所述電連接座群組中的所有所述電連接座相連接;各個所述測試模組用以對其所連接的多個所述電連接座上的所述晶片進行所述預定測試程序;及 其中,所述供電構件連接所述電路板;所述供電設備能通過所述設備本體的供電構件及所述晶片測試裝置的供電構件,提供電力給各個所述測試模組。 The wafer testing system according to claim 1, wherein the wafer testing device further includes: A circuit board whose opposite sides are defined as a first side and a second side respectively; A plurality of the electrical connection seats are fixedly arranged on the first side surface of the circuit board, each of the electrical connection seats is used to carry at least one of the chips; the plurality of electrical connection seats are divided into a plurality of Electrical connection base groups, each of the electrical connection base groups includes at least one of the electrical connection bases; A control unit, the control unit is arranged on the second side of the circuit board, the control unit includes a plurality of test modules, the plurality of the test modules are connected to the plurality of the electrical connection seat groups Connected, and each of the test modules is connected to all the electrical connection sockets in the corresponding electrical connection socket group; each of the test modules is used to connect the multiple electrical connections to it The chip on the seat performs the predetermined test procedure; and Wherein, the power supply component is connected to the circuit board; the power supply device can provide power to each of the test modules through the power supply component of the device body and the power supply component of the wafer testing device. 如請求項2所述的晶片測試系統,其中,所述晶片測試裝置的供電構件包含多個連接端子,多個所述連接端子設置於所述電路板;所述設備本體的供電構件包含多個容置室端子,各個所述容置室中設置有多個所述容置室端子;多個所述連接端子用以與各個所述容置室中的多個所述容置室端子相連接;當多個所述連接端子與其中一個所述容置室中的多個所述容置室端子相互連接時,所述供電設備能提供電力給所述晶片測試裝置。The wafer test system according to claim 2, wherein the power supply member of the wafer test device includes a plurality of connection terminals, and the plurality of connection terminals are provided on the circuit board; the power supply member of the equipment body includes a plurality of A receiving chamber terminal, a plurality of the receiving chamber terminals are provided in each of the receiving chambers; the plurality of connecting terminals are used to connect to a plurality of the receiving chamber terminals in each of the receiving chambers When a plurality of the connection terminals and a plurality of the accommodating chamber terminals in one of the accommodating chambers are connected to each other, the power supply device can provide power to the wafer testing device. 如請求項3所述的晶片測試系統,其中,各個所述環境控制設備還包含多個升降裝置,各個所述容置室中設置有一個所述升降裝置;各個所述升降裝置能被所述中央控制裝置控制,而使設置於所述容置室中的所述晶片測試裝置的多個所述連接端子與多個所述容置室端子相互連接或相互分離。The wafer testing system according to claim 3, wherein each of the environmental control equipment further includes a plurality of lifting devices, and each of the accommodation chambers is provided with one lifting device; each of the lifting devices can be The central control device controls to connect or separate the plurality of connection terminals and the plurality of the accommodation chamber terminals of the wafer testing device provided in the accommodation chamber. 如請求項2所述的晶片測試系統,其中,所述晶片測試裝置的供電構件為一接收天線,所述設備本體的供電構件為一發射天線,所述接收天線能與所述發射天線相互耦合,而所述晶片測試裝置能通過所述接收天線,以無線的方式接收所述供電設備所傳輸的電力。The wafer test system according to claim 2, wherein the power supply member of the wafer test device is a receiving antenna, and the power supply member of the device body is a transmitting antenna, and the receiving antenna can be coupled with the transmitting antenna , And the chip testing device can receive the power transmitted by the power supply device in a wireless manner through the receiving antenna. 如請求項2所述的晶片測試系統,其中,所述晶片測試裝置還包含有多個第一資料傳輸端子,多個所述第一資料傳輸端子設置於所述電路板,所述設備本體的各個所述容置室中設置有多個第二資料傳輸端子;多個所述第一資料傳輸端子用以與多個第二資料傳輸端子相互連接,以相互傳輸資料。The wafer test system according to claim 2, wherein the wafer test device further includes a plurality of first data transmission terminals, the plurality of first data transmission terminals are provided on the circuit board, and the device body A plurality of second data transmission terminals are arranged in each of the accommodating chambers; the plurality of first data transmission terminals are used to connect with a plurality of second data transmission terminals to transmit data to each other. 如請求項2所述的晶片測試系統,其中,所述晶片測試裝置還包含有至少一第一資料傳輸天線,所述第一資料傳輸天線用以與設置於所述環境控制設備的至少一第二資料傳輸天線以無線的方式傳輸資料。The chip testing system according to claim 2, wherein the chip testing device further includes at least one first data transmission antenna, and the first data transmission antenna is used to communicate with at least one second data transmission antenna provided in the environmental control device 2. The data transmission antenna transmits data wirelessly. 如請求項2所述的晶片測試系統,其中,各個所述測試模組在對其所連接的多個所述電連接座上的所述晶片完成所述預定測試程序後,所述測試模組將會把各個所述晶片的測試結果資料及其測試參數資料寫入所述晶片中,以使各個所述晶片中儲存有測試結果資料及測試參數資料。The chip testing system according to claim 2, wherein each of the test modules completes the predetermined test procedure for the chips on the plurality of electrical connection sockets connected to them, the test module The test result data and test parameter data of each of the chips will be written into the chip, so that the test result data and test parameter data are stored in each of the chips. 如請求項2所述的晶片測試系統,其中,各個所述環境控制設備還包含有多個罩體及至少一抽氣裝置;各個所述容置室中設置有一個所述罩體;當所述晶片測試裝置設置於其中一個所述容置室中,且所述晶片測試裝置被供電時,所述容置室中的所述罩體能蓋設於所述電路板上,而所述罩體與所述電路板能共同形成一封閉空間,多個所述電連接座則對應位於所述封閉空間中,且所述中央控制裝置能控制所述抽器裝置作動,以將所述封閉空間中的空氣向外抽出。The wafer testing system according to claim 2, wherein each of the environmental control equipment further includes a plurality of covers and at least one air extraction device; each of the containing chambers is provided with one of the covers; The wafer testing device is arranged in one of the accommodating chambers, and when the wafer testing device is powered, the cover in the accommodating chamber can be arranged on the circuit board, and the cover A closed space can be formed together with the circuit board, a plurality of the electrical connection seats are correspondingly located in the closed space, and the central control device can control the action of the extractor device to move the closed space The air is drawn outward. 如請求項9所述的晶片測試系統,其中,各個所述溫度調節裝置包含一接觸結構,各個所述溫度調節裝置被所述中央控制裝置控制而運作時,所述接觸結構的溫度將提升或降低至所述預定溫度;當所述罩體蓋設於設置於所述容置室中的所述晶片測試裝置的所述電路板上,且所述抽氣裝置被所述中央控制裝置控制而將所述封閉空間中的氣體向外抽出時,所述溫度調節裝置的所述接觸結構,將抵靠設置於所述晶片測試裝置的多個所述電連接座上的多個所述晶片的一側。The wafer test system according to claim 9, wherein each of the temperature adjusting devices includes a contact structure, and when each of the temperature adjusting devices is controlled by the central control device to operate, the temperature of the contact structure will increase or Lowered to the predetermined temperature; when the cover is set on the circuit board of the wafer testing device provided in the containing chamber, and the air extraction device is controlled by the central control device When the gas in the enclosed space is drawn out, the contact structure of the temperature adjusting device will abut against the multiple wafers on the multiple electrical connection seats of the wafer testing device. One side. 如請求項1所述的晶片測試系統,其中,各個所述環境控制設備還包含多個限位裝置,各個所述容置室中設置有一個所述限位裝置,各個所述限位裝置能被所述中央控制裝置控制,而與設置於所述容置室中的所述晶片測試裝置相互連接,據以限制所述晶片測試裝置於所述容置室中的活動範圍。The wafer testing system according to claim 1, wherein each of the environmental control equipment further includes a plurality of limit devices, and each of the accommodation chambers is provided with one limit device, and each of the limit devices can It is controlled by the central control device and connected with the wafer testing device arranged in the containing chamber, so as to limit the movement range of the wafer testing device in the containing chamber. 如請求項1所述的晶片測試系統,其中,所述晶片測試系統還包含一預先測試設備,所述預先測試設備連接所述中央控制裝置,所述預先測試設備包含至少一電連接座,所述預先測試設備的電連接座用以承載至少一個所述晶片,所述預先測試設備能對其所承載的所述晶片進行一短路測試及一漏電流測試;所述中央控制裝置能控制所述移載設備,以使所述晶片安裝設備在將各個所述晶片安裝於所述晶片測試裝置前,先將各個所述晶片安裝於所述預先測試設備的電連接座,以對所述晶片進行所述短路測試及所述漏電流測試。The wafer test system according to claim 1, wherein the wafer test system further includes a pre-test device connected to the central control device, and the pre-test device includes at least one electrical connector, so The electrical connector of the pre-test equipment is used to carry at least one of the wafers, and the pre-test equipment can perform a short circuit test and a leakage current test on the wafers it carries; the central control device can control the Transfer equipment, so that the wafer mounting equipment first installs each wafer on the electrical connection seat of the pre-test equipment before mounting each wafer on the wafer testing device to perform The short circuit test and the leakage current test. 如請求項1所述的晶片測試系統,其中,所述晶片測試系統還包含一最終測試設備,所述最終測試設備連接所述中央控制裝置,所述最終測試設備包含至少一電連接座,所述最終測試設備的電連接座用以承載至少一個所述晶片,所述最終測試設備能對其所承載的晶片進行一短路測試及一漏電流測試;所述中央控制裝置能控制所述移載設備,將各個所述晶片由所述晶片測試裝置上卸下後,先將各個所述晶片安裝於所述最終測試設備的電連接座,以對所述晶片進行所述短路測試及所述漏電流測試。The wafer test system according to claim 1, wherein the wafer test system further includes a final test device, the final test device is connected to the central control device, and the final test device includes at least one electrical connector, so The electrical connection seat of the final test equipment is used to carry at least one of the wafers, and the final test equipment can perform a short circuit test and a leakage current test on the wafers it carries; the central control device can control the transfer Equipment, after unloading each of the wafers from the wafer testing device, first install each of the wafers on the electrical connection seat of the final test equipment to perform the short circuit test and the leakage test on the wafer Current test.
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