TWI490502B - Probe card - Google Patents

Description

Probe card

The present invention relates to a probe card; and more particularly to a probe card that can selectively adjust the length of the probe for electrical testing of a wafer stack structure.

With advances in semiconductor process technology, semiconductor wafers are required to have sufficient computing power to cope with the multiplex requirements of today's consumers for 3C products. At the same time, semiconductor wafers are also required to have a miniaturized volume. To meet the convenience of being installed in portable electronic products. However, each time the semiconductor wafer is miniaturized, it often means that further strict requirements on the finished product produced by the semiconductor process are required to ensure the normal operation of the subsequent semiconductor wafer finished product. In view of this, the industry has developed a method of detecting a semiconductor wafer using a probe card to specifically and surely detect whether the semiconductor wafer can correctly conduct conduction of electrical signals.

In view of the demand for miniaturization of semiconductor devices, vertical stacked wafer technology has become an inevitable trend to accommodate more semiconductor wafers per unit area, and to improve the electrical transmission rate between wafers, and to develop through-pass perforation The electrode (Through-Silicon-Via, TSV) is used for the electrical transmission of the wafer, and the detection of the electrical signal is more important for the semiconductor wafer stack structure which is electrically connected directly to the TSV.

In the prior art, the probe card is mainly composed of a circuit board and a probe head/probe holder having a plurality of probes, and the tip of the plurality of probes is located in a common plane. Suitably, when it is desired to perform electrical testing of a semiconductor wafer, the plurality of probes on the probe card can be respectively The semiconductor wafer is electrically inspected by direct contact with a plurality of pads or bumps on the semiconductor wafer and by input and reception of electrical signals.

However, as shown in FIG. 1, the conventional probe card 100 has a circuit board 110 and a probe head 120, and the probe head 120 is a semiconductor because it has only a single coplanar probe 122. The wafer stack is disposed on a wafer stacking region 412 on the substrate 410. After the wafer stack structure 400 is formed, the conventional probe card 100 will be difficult to connect with the through-silicon via electrodes 422 or the bumps 430 and the substrate 410 on the wafer 420. The test endpoints 414 are simultaneously in contact for electrical signal detection. Moreover, even though the probe card 100 has a probe 122 having a different coplanarity to simultaneously contact the through-silicon via electrode 422 of the wafer 420 and the test terminal 414 on the substrate 410, the length of the probe 122 is In order to be fixed, it is not possible to perform an electrical detection operation once after each layer of the wafer 420 is stacked. At the same time, the stack structure 400 for different numbers of wafers cannot be electrically detected by the same probe card 100, so the inspector needs to be replaced. The probe card corresponding to the number of wafer layers of the wafer stack structure is capable of performing related electrical detection operations. In other words, this will not only increase the cost of purchasing different probe cards, but also seriously delay the time course of detecting the stack structure of the wafer when the different probe cards are continuously replaced for electrical testing.

In view of this, how to provide a probe card that can be changed according to the height of the detected wafer stack structure to complete the electrical signal detection, and save the expense of purchasing the probe card, is the current industry leading period. I hope that the problem I want to solve.

An object of the present invention is to provide a probe for adjusting the height of a probe according to test requirements. The pin card performs electrical signal detection corresponding to the wafer stack structure to be tested.

It is still another object of the present invention to provide a probe card that can adjust the height of the probe according to the test requirements, thereby saving the additional expense of purchasing other probe cards while shortening the time for performing electrical detection.

To achieve the above object, the probe card of the present invention comprises a circuit board, a probe head, a first probe set and a second probe set. The probe head is assembled on the circuit board and electrically connected thereto, and the first probe set and the second probe set are all disposed on the probe head, and respectively have a plurality of first vertical probes and a plurality of second Vertical probe. The first vertical probes are located in an inner region of the probe head for sensing a plurality of through-cell twinned via electrodes of at least one of the wafer stack structures, the second vertical probes being located in an outer region of the probe head a plurality of test endpoints for sensing a substrate of one of the wafer stack structures. Moreover, the first vertical probes have a first length, the second vertical probes have a second length, and the second length is greater than the first length.

The above described objects, technical features, and advantages of the present invention will be more apparent from the following description.

In order to make the probe card have a plurality of probes, the height of the wafer stack structure can be changed corresponding to the next-generation semiconductor process, and the present invention is improved for the probe head and the probe set of the existing probe card. To meet the needs of actual inspection applications.

Hereinafter, each embodiment of the probe card of the present invention will be described in detail.

2A, 2B and 2C are the first embodiment of the probe card of the present invention. As shown, one of the wafer stack structures 400 to be electrically tested includes a substrate 410 and at least one wafer 420. The substrate 410 has a wafer stacking region 412 and a plurality of test terminals 414 located outside the wafer stacking region 412. In addition, at least one wafer 420 can include a plurality of wafers 420. As in FIGS. 2A, 2B, and 2C, the wafer stack structure 400 includes two, four, and eight wafers 420, respectively, and the wafer 420 has a plurality of through-silicon via electrodes 422. (Through-Silicon-Via, TSV), and the plurality of wafers 420 are vertically stacked in the wafer stacking region 412, and electrically connected to each other through the through-silicon via electrodes 422 to perform electrical signals in the wafer stack structure 400. transfer. In other embodiments, a plurality of bumps 430 may be formed on the wafer 420, respectively corresponding to the electrical connection through the via via electrodes 422 for external electrical interconnection of the wafer 420.

As shown, in the first embodiment, a probe card 200 of the present invention has a circuit board 210, a probe head 220, a first probe set 230, and a second probe set 240. The probe head 220 is assembled on the circuit board 210 and electrically connected to the circuit board 210. Meanwhile, the first probe set 230 and the second probe set 240 respectively have a plurality of first vertical probes 232 and a plurality of Two vertical probes 242.

In this embodiment, the plurality of first vertical probes 232 have a first length L11, and the plurality of first vertical probes 232 are disposed in an inner region 222 of the probe head 220 for contacting the plurality of straight passes of the wafer 420. The crystal is perforated with an electrode 422 or a bump 430. Similarly, the plurality of second vertical probes 242 have a second length L12, and the plurality of second vertical probes 242 are disposed on an outer region 224 of the probe head 220 for contacting the plurality of tests disposed on the substrate 410. Endpoint 414. Moreover, the second length L12 of the plurality of second vertical probes 242 is greater than the plurality of first vertical probes 232. There is a first length L11.

Accordingly, in the first embodiment shown in FIGS. 2A, 2B, and 2C, since the plurality of first vertical probes 232 are fixed, the first length L11 is maintained, and the plurality of second vertical probes 242 are maintained. The second length L12 is gradually increased as the number of the wafers 420 of the wafer stack structure 400 is increased, so that the probe card 200 of the embodiment can correspond to the height regardless of the height of the wafer stack structure 400. Change and conduct electrical testing.

3A, 3B and 3C are second embodiments of the probe card of the present invention. In the 3A, 3B, and 3C diagrams, the wafer stack structure 400 includes two, four, and eight wafers 420, respectively. As shown, a probe card 300 has a circuit board 310, a probe head 320, a first probe set 330, and a second probe set 340. The probe head 320 is assembled on the circuit board 310 and electrically connected to the circuit board 310. In addition, the probe head 320 includes a main board 322 and a side board 324, and the side board 324 is located on the outer side of the main board 322.

In detail, the first probe set 330 and the second probe set 340 respectively have a plurality of first vertical probes 332 and a plurality of second vertical probes 342, and the plurality of first vertical probes 332 and the plurality of second vertical probes The 342 is disposed on the main board 322 and the side board 324, respectively. The plurality of first vertical probes 332 are used to probe the plurality of through-silicon via electrodes 422 or bumps 430 of the wafer 420, and the plurality of second vertical probes 342 are used to probe the plurality of tests disposed on the substrate 410. Endpoint 414.

As shown, the plurality of first vertical probes 332 and the plurality of second vertical probes 342 have a first length L21 and a second length L22, respectively, and the first length L21 is similar to the second length L22. In addition, the main board 322 has a first portion relative to the circuit board 310. A height H21, the side plate 324 has a second height H22 with respect to the circuit board 310, and the second height H22 is greater than the first height H21. The first height H21 of the main board 322 is fixed, and the second height H22 of the side board 324 is adjustable such that the second height H22 can be increased as the number of wafers 420 of the wafer stack structure 400 increases.

Therefore, in the second embodiment as shown in FIGS. 3A, 3B and 3C, in order to achieve the first height H21 of the main board 322 is fixed, and the second height H22 of the side plate 324 is adjustable, The needle 320 utilizes a replaceable side panel 324 to adjust the second height H22 accordingly.

In addition, the aforementioned replaceable side panels 324 may also be replaced by a plurality of assembly blocks 350 to form a third embodiment as shown in Figures 4A, 4B and 4C. 4A, 4B, and 4C, the wafer stack structure 400 includes two, four, and eight wafers 420, respectively.

In detail, in the third embodiment shown in FIGS. 4A, 4B and 4C, the side plates 324 of the probe card 300 are composed of a plurality of assembly blocks 350 which are adapted to be assembled to each other to correspond to the wafer stack structure. The number of wafers 420 of 400 is adjusted to a second height H22. Moreover, the plurality of assembly blocks 350 also each have a plurality of electrical conduction terminals (not shown) for electrically connecting the assembly blocks 350 to each other and electrically connecting the circuit board 310.

Different from the foregoing second embodiment and the third embodiment, in the fifth embodiment shown in FIGS. 5A, 5B and 5C and the fifth embodiment shown in FIGS. 6A, 6B and 6C, the probe card The second height H22 of the side plate 324 of the probe head 320 of 300 is fixed, and the first height H21 of the main plate 322 is adjustable such that the first height H21 can be increased with the number of the wafer 420 of the wafer stack structure 400. And shrinking.

In detail, in the fourth embodiment shown in FIGS. 5A, 5B, and 5C, the probe card 300 further includes a fine adjustment device 360, and the fine adjustment device 360 is adapted to penetrate the circuit board 310 and has a circuit board 310 respectively. A first end 362 and a second end 364 on opposite sides of the second side. The first end 362 is connected to the main board 322 to selectively move the main board 322 to a different number corresponding to the number of the wafers 420 of the wafer stack structure 400 when the second height H22 of the side board 324 is fixed. a height H21, such that the tip of the first vertical probe 332 is adapted to contact the plurality of through-silicon via electrodes 422 or bumps 430 of the wafer 420 of the uppermost layer of the wafer stack structure 400, while the second terminal 364 is suitable. The fixing member 366 is rotatably mounted on the circuit board 310 for adjusting the first height H21. As shown in FIGS. 5A, 5B, and 5C, the number of wafers 420 of the wafer stack structure 400 is two, four, and eight, respectively, and the first height H21 is reduced as the number of wafers 420 increases.

Similarly, in the fifth embodiment shown in FIGS. 6A, 6B and 6C, the probe card 300 further includes a fine adjustment device 370, and the fine adjustment device 370 is adapted to penetrate the side plate 324 and has two opposite sides of the side plate 324, respectively. A first end 372 and a second end 374 of the side. The first end 372 is connected to the main plate 322, and the second end 374 is movably fastened to the side plate 324 by a fixing member 376. Therefore, when the second height H22 of the side plate 324 is fixed, correspondingly The number of the wafers 420 of the wafer stack structure 400 is such that the fine adjustment device 370 is moved on the side plate 324 to selectively move the main board 322 to a different first height H21 to make the tip of the first vertical probe 332 contact. The plurality of wafers 420 of the uppermost layer of the wafer stack structure 400 pass through the through-hole via electrodes 422 or bumps 430. As shown in FIGS. 6A, 6B, and 6C, the number of wafers 420 of the wafer stack structure 400 is two, four, and eight, respectively, and the first height H21 is reduced as the number of wafers 420 increases.

In the foregoing fourth embodiment and the fifth embodiment, the circuit board 310 of the probe card 300 and the main board 322 of the probe head 320 are electrically connected by a plurality of wires 390, and the plurality of wires 390 have a length. The phase is adjusted corresponding to the first height H21. Meanwhile, the type of the plurality of wires 390 may be selected from the group consisting of coaxial wires, pogo pins, and springs, so that the wire length can be adjusted corresponding to the first height H21. The purpose.

In summary, the probe card disclosed in the present invention can be divided into the following three types of aspects to perform conductivity detection corresponding to the wafer stack structure 400:

1. As shown in the first embodiment of FIGS. 2A, 2B and 2C, the first length L11 of the plurality of first vertical probes 232 is fixed, and the second length L12 of the plurality of second vertical probes 242 is adjusted to make the wafer When the number of wafers 420 of the stacked structure 400 is increased, the first probe set 230 and the second probe set 240 of the probe card 200 and the plurality of through-silicone via electrodes of the uppermost wafer 420 of the wafer stack structure 400, respectively, are still allowed. The 422 or bump 430 and the plurality of test terminals 414 of the substrate 410 are in contact for detecting the electrical signal of the wafer stack structure 400.

2. As shown in the second embodiment of FIGS. 3A, 3B, and 3C and the third embodiment of FIGS. 4A, 4B, and 4C, the first vertical probe 332, the second vertical probe 342, and the probe are not changed. In the case of the main board 322 of the head 320, that is, when the first length L21 of the first vertical probe 332, the second length L22 of the second vertical probe 342, and the first height H21 of the main board 322 of the probe head 320 are both When fixed, the second height H22 of the side plate 324 of the probe head 320 is adjusted to allow the first probe set 330 and the second probe of the probe card 300 to be increased when the number of wafers 420 of the wafer stack structure 400 is increased. The needle set 340 is respectively crossed with the topmost wafer 420 of the wafer stack structure 400. The hole electrode 422 or the bump 430 and the plurality of test terminals 414 of the substrate 410 are in contact for detecting the electrical signal of the wafer stack structure 400.

3. As shown in the fifth embodiment of FIGS. 5A, 5B, and 5C and the fifth embodiment of FIGS. 6A, 6B, and 6C, the first vertical probe 332, the second vertical probe 342, and the probe are not changed. In the case of the side plate 324 of the head 320, that is, when the first length L21 of the first vertical probe 332, the second length L22 of the second vertical probe 342, and the second height H22 of the side plate 324 of the probe head 320 are both When fixed, the first height H21 of the main body 322 of the probe head 320 is adjusted by the fine adjustment device 360 and the fine adjustment device 370, respectively, so that when the number of the wafers 420 of the wafer stack structure 400 is increased, the probe card 300 can still be made. A probe set 330 and a second probe set 340 are respectively in contact with a plurality of through-silicon via electrodes 422 or bumps 430 of the uppermost wafer 420 of the wafer stack structure 400 and a plurality of test terminals 414 of the substrate 410 for wafer stacking. Detection of electrical signals of structure 400.

In other words, since the probe card of the present invention can directly perform the detection of electrical signals for the wafer stack structure having a significant height difference by adjusting the length of the probe or the relative height between the main board and the side plates of the probe head, In practice, even if an electrical inspection operation is required once for each wafer is stacked, the probe card of the present invention can be quickly adjusted according to the height of the wafer stack structure, thereby performing an electrical detection process to shorten the wafer stacking. The electrical test time of the structure accelerates the production speed of the semiconductor process and saves the cost of purchasing probe cards of different flatness.

The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any change or equivalence arrangement that can be easily accomplished by those skilled in the art is within the scope of the present invention. The scope of protection of the present invention should be based on the scope of the patent application.

100‧‧‧ probe card

110‧‧‧Circuit board

120‧‧‧Probe head

122‧‧‧Probe

200‧‧‧ probe card

210‧‧‧ boards

220‧‧‧ probe head

222‧‧‧Internal area

224‧‧‧External area

230‧‧‧First probe set

232‧‧‧First vertical probe

240‧‧‧Second probe set

242‧‧‧Second vertical probe

300‧‧‧ probe card

310‧‧‧Circuit board

320‧‧‧Probe head

322‧‧‧ motherboard

324‧‧‧ side panels

330‧‧‧First probe set

332‧‧‧First vertical probe

340‧‧‧Second probe set

342‧‧‧Second vertical probe

350‧‧‧Assembly block

360‧‧‧ fine-tuning device

362‧‧‧ first end

364‧‧‧second end

366‧‧‧Fixed parts

370‧‧‧ fine-tuning device

372‧‧‧ first end

374‧‧‧second end

376‧‧‧Fixed parts

390‧‧‧Wire

400‧‧‧ wafer stack structure

410‧‧‧Substrate

412‧‧‧ wafer stacking area

414‧‧‧Test endpoint

420‧‧‧ wafer

422‧‧‧through through-silicone perforated electrode

430‧‧‧Bumps

L11‧‧‧ first length

L12‧‧‧second length

L21‧‧‧ first length

L22‧‧‧second length

H21‧‧‧First height

H22‧‧‧second height

1 is a schematic view of a probe card of the prior art; 2A, 2B, and 2C are schematic views of a first embodiment of the probe card of the present invention; and 3A, 3B, and 3C are the first of the probe cards of the present invention. 2A, 4B, and 4C are schematic views of a third embodiment of the probe card of the present invention; FIGS. 5A, 5B, and 5C are schematic views of a fourth embodiment of the probe card of the present invention; and 6A The 6B and 6C drawings are schematic views of the fifth embodiment of the probe card of the present invention.

200‧‧‧ probe card

210‧‧‧ boards

220‧‧‧ probe head

222‧‧‧Internal area

224‧‧‧External area

230‧‧‧First probe set

232‧‧‧First vertical probe

240‧‧‧Second probe set

242‧‧‧Second vertical probe

400‧‧‧ wafer stack structure

410‧‧‧Substrate

412‧‧‧ wafer stacking area

414‧‧‧Test endpoint

420‧‧‧ wafer

422‧‧‧through through-silicone perforated electrode

430‧‧‧Bumps

L11‧‧‧ first length

L12‧‧‧second length

Claims (12)

A probe card for electrically testing a wafer stack structure, the wafer stack structure comprising a substrate, and at least one wafer, wherein the substrate has a wafer stacking region, and a plurality of tests outside the wafer stacking region An end point, the at least one wafer is disposed in the wafer stacking region and has a plurality of Through-Silicon-Via (TSV), the probe card comprises: a circuit board; a probe head assembled in the The circuit board is electrically connected to the circuit board; and a first probe set and a second probe set respectively have a plurality of first vertical probes and a plurality of second vertical probes, and the vertical probes are respectively Provided on the probe head, the first vertical probe is located in an inner region of the probe head for sensing the through-silicon via electrodes of the at least one wafer, wherein the second vertical probes are located An outer region of the probe head for detecting the test endpoints of the substrate; wherein the circuit board, the probe head, the first vertical probes, and the second vertical probes are sequentially Configured along a vertical direction, the same The vertical probe in a vertical direction having a first length, such that the second vertical probe along a vertical direction having a second length, the second length and the first length is greater than the system. The probe card of claim 1, wherein the first length is fixed and the second length increases as the number of wafers of the wafer stack structure increases. A probe card for electrically testing a wafer stack structure, the wafer stack structure comprising a substrate, and at least one wafer, wherein the substrate has a wafer stacking region, and a plurality of tests outside the wafer stacking region End point, The at least one wafer is disposed in the wafer stacking region and has a plurality of through-silicon via electrodes. The probe card comprises: a circuit board; a probe head is assembled on the circuit board and electrically connected to the circuit board. The probe head comprises a main board and a side board, the side board is located on the outer side of the main board; and a first probe set and a second probe set respectively have a plurality of first vertical probes and a plurality of second vertical probes And the first vertical probe is configured to detect the through-twisted perforated electrodes of the at least one chip, and the second vertical probes are used to detect the The test end points of the substrate; wherein the circuit board, the probe head, the first vertical probes, and the second vertical probes are sequentially arranged along a vertical direction, the first vertical probes Having a first length along the vertical direction, the second vertical probe has a second length along the vertical direction, and the first length is similar to the second length, and the motherboard has a first dimension relative to the circuit board Height, the side panel has one with respect to the circuit board Two height and the second height is greater than the first height. The probe card of claim 3, wherein the first height of the main board is fixed, and the second height of the side panel is adjustable, and the second height is related to the number of wafers of the wafer stack structure Increase and increase. The probe card of claim 4, wherein the probe head utilizes the replaceable side panel to adjust the second height. The probe card of claim 4, wherein the side panel is composed of a plurality of assembly blocks that can be assembled and coupled to each other to adjust the second height. The probe card of claim 6, wherein the assembly blocks each have a plurality of electrical conduction terminals for electrically connecting the assembly blocks to each other and to the circuit board. The probe card of claim 3, wherein the second height of the side panel is fixed, and the first height of the main board is adjustable, and the first height is related to the number of wafers of the wafer stack structure Increase and shrink. The probe card of claim 8, further comprising a fine adjustment device extending through the circuit board and having a first end and a second end on opposite sides of the circuit board, respectively One end is connected to the main board to move the main board to different first heights, and the second end is rotatably bolted to the circuit board by a fixing member for adjusting the first height. The probe card of claim 8, further comprising a fine adjustment device extending through the side panel and having a first end and a second end on opposite sides of the side panel, the first end The first end is connected to the main board, and the second end is movably fastened to the side panel by a fixing member. When the fine adjustment device moves on the side panel, the first height can be adjusted accordingly. The probe card of claim 8, further comprising a plurality of wires electrically connected to the circuit board and the main board of the probe head, and the lengths of the wires are adjusted corresponding to the first height . The probe card of claim 11, wherein the types of the wires are selected from the group consisting of coaxial wires, pogo pins, and springs.