TWI485747B - Securing mechanism and method for wafer bonder - Google Patents

Description

Fixing mechanism and method for wafer bonder

The present invention relates generally to the field of semiconductor wafer processing techniques and, more particularly, to a fixed mechanism for a wafer bonding apparatus.

In certain processing operations involving thin and/or fragile wafers, it may be desirable to mount a wafer to a board for support and easier handling. This setup procedure is sometimes referred to as a bonding procedure and can be achieved, for example, by using an adhesive.

In some bonding processes, one of the wafers bonded to one of the plates can be cured by the application of heat. During this heat application, it is generally desirable to apply a uniform mechanical pressure to cause the wafer to become joined to the plate in a generally parallel manner.

In certain embodiments, the present invention is directed to an apparatus for joining a wafer to a board. The apparatus includes a base member sized to receive a configuration to engage one of the wafers and one of the receiving sides of a plate. The apparatus further includes a cover having a first opposing side and a second opposing side and configured to be placed in an open position and a closed position relative to the base member. The open position facilitates positioning of the wafer and the plate on the base member for bonding and removing the bonded assembly of wafers and plates from the base member after the bonding. The closed position facilitates engagement of the wafer with the plate. The first side is sized to engage the receiving side of the base member when the cover is in the closed position. The device further includes one or more fixed mechanisms. Each securing mechanism is configured to engage the second side of the cover when the cover is in the closed position and apply a securing force to the second side of the cover from the second side of the cover to abut The receiving side of the base member pushes the cover.

In some embodiments, the cover can include a solid plate between the first side and the second side of the cover. The receiving side of the base member and the first side of the cover may define an engagement chamber when the cover is in the closed position.

In some embodiments, the cover can be configured to substantially separate the engagement chamber from the second side of the cover. The lid may further comprise a partition disposed on the first side of the lid. The spacer can be sized and configured to provide a bonding force to the wafer and the board during the bonding. The cover may include a pressure channel between a portion of the first side thereof and a position behind the partition. The pressure passage may allow gas pressure to be provided to the position to allow the diaphragm to provide the engagement force. The receiving side of the base member can define a pressure passage configured to receive gas from a source and communicate with the pressure passage of the cover to provide the gas pressure to the location behind the diaphragm. The base member can further include a suction opening in communication with a suction source. The suction opening can be positioned to hold the assembly of wafers and plates during the bonding.

In some embodiments, the base member can further include a first seal and a second seal disposed on the receiving side. The first seal can be configured to provide a gas seal between the exterior and the pressure channel of the base member. The second seal can be configured to provide a gas seal between the pressure channel of the base member and the joint chamber.

In some embodiments, the securing mechanism can include a gripping device mounted to a mounting structure coupled to the base member. The clamping device can have a push link configured to engage the second side of the cover and urged against the second side of the cover by one of its ends to provide the securing force . The mounting structure can be positioned at a location around the perimeter of the base member and outside of the perimeter of the cover when the cover is in the closed position.

In some embodiments, the securing mechanism can further include a support beam configured to couple the push link to the mounting structure. The support beam can be further configured to position the push link to a position within the perimeter of the cover when the cover is in the closed position. The push link and the support beam can be configured to allow adjustment of the length of the push link from the support beam to the end of the second side that engages the cover.

In some embodiments, the securing mechanism can further include a latching handle configured to engage and latch when the push link is providing the securing force to the second side of the cover The support beam. The locking handle can be configured to lock the support beam by a cam action.

In certain embodiments, the present invention is directed to a wafer bonding station having one or more of the devices outlined above.

In certain embodiments, the present invention is directed to a method for joining a wafer to a board. The method includes applying an adhesive between a wafer and a board to form an assembly of the wafer and the board. The method further includes positioning the assembly on a joint region. The method further includes positioning a cover over the joint region. The cover has an outer surface and an inner surface that is configured to facilitate application of pressure to the assembly. The method further includes applying a pushing force from the outer surface side of the cover to the outer surface of the cover to secure the cover in a substantially fixed orientation. The urging force is directed along a direction having one of the components perpendicular to a plane defined by the wafer. The method further includes engaging the assembly by applying pressure and heat to the assembly.

In certain embodiments, the method can further include removing the urging force on the outer surface of the lid after the joining is completed to allow removal of the lid from the joint region.

In certain embodiments, the present invention is directed to an apparatus for securing a lid of a wafer bonding apparatus. The device includes a substrate coupled to a support structure of the wafer bonding apparatus and disposed at a location external to the periphery of the cover when the cover is in a closed position. The apparatus further includes a support beam having a first end that is pivotally mounted to the base to allow the support beam to be placed in a disengaged position and an engaged position. The device further includes a push link having an axis and mounted to the support beam at a mounting location on the support beam such that the push link is mounted at an angle relative to the support beam The position extends to a push end for a length. The mounting location is separated from the first end of the support beam by a distance. At least one of the length, the angle, and the distance is selected such that the push end of the push link engages an upper surface of the cover in its closed position when the support beam is in the engaged position, wherein The axis of the push link is less than about 20 degrees from a normal to a plane defined by the upper surface of the cover. The device further includes a latching mechanism configured to lock the support beam in the engaged position and to unlock the support beam from the engaged position, respectively.

In some embodiments, the axis of the push link can be less than about 5 degrees from the normal.

For purposes of summarizing the invention, certain aspects, advantages, and novel features of the invention are set forth herein. It should be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment of the invention. Accordingly, the invention may be embodied or carried out in a manner that is a versatile or advantageous combination of the teachings of the invention.

The headings, if any, provided herein are for convenience only and do not necessarily affect the scope or meaning of the claimed invention.

Various methods and apparatus for processing wafers such as semiconductor wafers are provided herein. 1 shows an example of a program 10 in which a functional wafer is further processed to form a through-wafer feature such as a via and a backside metal layer. As further shown in FIG. 1, the example program 10 can include bonding a wafer to a carrier to support and/or facilitate handling during various steps of the process, and after completing the steps, the wafer is self-supported. Go to join. Figure 1 further shows that the wafer separated from the carrier can be further processed to produce a plurality of dies.

In the description herein, various examples are set forth in the context of a GaAs substrate wafer. However, it will be understood that some or all of the features of the present invention may be implemented while processing other types of semiconductor wafers. Moreover, some of these features can also be applied to situations involving non-semiconductor wafers.

In the description herein, various examples are set forth in the context of processing wafers on the back side. However, it will be understood that some or all of the features of the present invention may be implemented while the wafer is being processed on the front side.

In the procedure 10 of Figure 1, a functional wafer (block 11) can be provided. 2A illustrates a side view of the wafer 30 having a first side and a second side. The first side can be a front side and the second side can be a rear side.

2B shows an enlarged view of one of the portions 31 of the wafer 30. Wafer 30 can include a substrate layer 32 (eg, a GaAs substrate layer). Wafer 30 can further include a number of features formed on or in its front side. In the example shown, a transistor 33 and a metal pad 35 are depicted as being formed on the front side. The exemplary transistor 33 is illustrated as having an emitter 34b, a base 34a, 34c, and a collector 34d. Although not shown, the circuit may also include passive components formed, such as inductors, capacitors, and sources and gates for combining planar field effect transistors (FETs) with heterojunction bipolar transistors (HBTs). Bungee jumping. These structures can be formed by various processes performed on epitaxial layers that have been deposited on the substrate layer.

Referring to the procedure 10 of Figure 1, the functional wafer of block 11 can be tested in several ways prior to bonding (block 12). This pre-bond test can include, for example, DC and RF tests associated with program control parameters.

After this test, the wafer can be bonded to a carrier (block 13). In some embodiments, this bonding can be achieved with the carrier over the wafer. Thus, FIG. 2C shows an exemplary assembly of wafer 30 and a carrier 40 (above the wafer) that can be produced from bonding step 13. In certain embodiments, engage the wafer may be used with a carrier such as wax or Crystalbond ^TM temporary installation of a commercially available adhesive. In FIG. 2C, the adhesive is illustrated as a layer 38 of adhesive.

In certain embodiments, the carrier 40 can have a plate that is similar in shape (eg, circular) to one of the wafers it is supporting. Preferably, carrier plate 40 has certain physical properties. For example, the carrier plate 40 can be relatively rigid for providing structural support to the wafer. In another example, carrier plate 40 can withstand several chemicals and environments associated with various wafer programs. In another example, carrier plate 40 can have certain desired optical properties to facilitate several procedures (e.g., to accommodate transparency of optical calibration and inspection).

Materials having some or all of the above properties may comprise sapphire, borosilicate (also known as Pyrex), quartz, and glass (eg, SCG72).

In some embodiments, carrier plate 40 can be sized larger than wafer 30. Thus, for a circular wafer, a carrier plate can also have a circular shape with a diameter greater than one of the diameters of one of the wafers it supports. This larger size of the carrier plate facilitates easier handling of the mounted wafer and, thus, allows for more efficient processing of areas at or near the perimeter of the wafer.

Tables 1A and 1B list exemplary dimensions of various exemplary size ranges and carrier plates of certain exemplary circular shapes that may be utilized in the process 10 of FIG.

An enlarged portion 39 of the joined assembly of Figure 2C is illustrated in Figure 2C. The bonded assembly can include a GaAs substrate layer 32 having a plurality of devices thereon, such as the transistor (33) and metal pad (35) illustrated with reference to Figure 2B. Wafers (30) having such substrates (32) and devices (eg, 33, 35) are illustrated as bonded to carrier plate 40 via adhesive layer 38.

As shown in Figure 2D, the substrate layer 32 at this stage has a thickness d1 and the carrier plate 40 has a substantially fixed thickness (e.g., one of the thicknesses in Table 1). Thus, the total thickness of the joined assembly (T _assembly ) can be determined by the amount of bonding in layer 38.

In a number of processing situations, it is preferred to provide a sufficient amount of binder to cover the highest feature(s) to produce a more uniform bond between the wafer and the carrier sheet, and also to make this high feature not directly Engage the carrier plate. Thus, in the example shown in FIG. 2D, the emitter feature (34b in FIG. 2B) is the highest among the example features; and the adhesive layer 38 is thick enough to cover this feature and provide the wafer 30. A relatively uninterrupted bond with the carrier plate 40.

Referring to the procedure 10 of Figure 1, the wafer (which is now mounted to the carrier plate) can be thinned in blocks 14 and 15 to produce a desired substrate thickness. In block 14, the back side of the substrate 32 can be ground (e.g., by two steps of grinding by means of a coarse and fine diamond inlaid grinding wheel) to produce an intermediate thickness substrate having a relatively rough surface (having as in Figure 2E) The thickness shown is d2). In some embodiments, such a grinding process can be performed with the bottom surface of the substrate facing down.

In block 15, the relatively rough surface can be removed to produce a smoother back surface of one of the substrates 32. In some embodiments, this removal of the rough substrate surface can be achieved by an O ₂ plasma ashing procedure followed by a wet etch procedure using one of the acidic or basic chemistry. The acidic or basic chemical may comprise HCl, H ₂ SO ₄ , HNO ₃ , H ₃ PO ₄ , H ₃ COOH, NH ₄ OH, H ₂ O ₂ mixed with H ₂ O ₂ and/or H ₂ O. Wait. This etch process provides for the relaxation of the possible stresses generated on the wafer free of the rough abrasive surface.

In some embodiments, the plasma ashing and wet etching procedures described above can be performed with the substrate 32 facing upside. Thus, the bonded assembly of FIG. 2F depicts the wafer 30 above the carrier plate 40. 2G shows a substrate layer 32 having a thinned and smoothed surface and a corresponding thickness d3.

By way of an example, a pre-polished thickness (d1 in Figure 2D) of a 150 mm (also referred to as "6 inch") GaAs substrate can be about 675 microns. The thickness d2 (Fig. 2E) produced by the grinding process can be in the range of about 102 microns to 120 microns. The ashing and etching process removes a rough surface of about 2 microns to 20 microns to yield a thickness of about 100 microns (d3 in Figure 2G). Other thicknesses are also available.

In some cases, the desired thickness of one of the smoothed substrate layers of the backside surface can be an important design parameter. Therefore, it is desirable to be able to monitor the thinning (block 14) and stress relaxation (block 15) procedures. Since the substrate layer can be difficult to measure when the wafer is bonded to the carrier plate and processed, the thickness of the bonded assembly can be measured to allow for inferring the substrate layer thickness. This measurement can be achieved, for example, by allowing a gas (eg, air) back pressure measurement system to detect a surface (eg, the back side of the substrate and the "front" surface of the carrier plate) without contact. .

As illustrated with reference to Figure 2D, the thickness of the bonded assembly ( _Tassembly ) can be measured; and the thickness of carrier plate 40 and un-thinned substrate 32 can have known values. Therefore, subsequent thinning of the bonded assembly can be attributed to thinning of the substrate 32; and the thickness of the substrate 32 can be estimated.

Referring to the procedure 10 of Figure 1, the thinned and stress relaxed wafer can undergo a through wafer via formation process (block 16). 2H to 2J show different stages during the formation of a through hole 44. This via is described herein as being formed from the back side of the substrate 32 and extending through the substrate 32 to terminate at the example metal pad 35. It will be appreciated that one or more of the features set forth herein may also be implemented for other deep features that may not necessarily extend through the substrate from beginning to end. In addition, other features may be formed for purposes other than providing one of the metal features on the front side (whether or not they extend through the wafer).

To form a etch resist layer 42 (Fig. 2H) defining one of the etch openings 43, photolithography can be utilized. Coating a resist material on the surface after the substrate, exposing a mask pattern, and developing the exposed resist coating can be accomplished in a known manner. In the example configuration of FIG. 2H, the resist layer 42 can have a thickness in a range from about 15 microns to 20 microns.

To form a through-wafer via 44 (FIG. 2I) from the back surface of the substrate to the metal pad 35, techniques such as dry inductively coupled plasma (ICP) etching (by means of chemicals such as BCl ₃ /Cl ₂ ) can be utilized. In various embodiments, a through hole of a desired shape can be an important design parameter for facilitating proper metal coverage therein in subsequent processes.

Figure 2J shows the vias 44 formed in which the resist layer 42 is removed. To remove the resist layer 42, a photoresist coating stripping solvent such as NMP (N-methylpyridine-2-pyrrolidone) and EKC can be applied using, for example, a batch of spray tool. In various embodiments, proper removal of the resist material 42 from the surface of the substrate can be an important consideration for subsequent metal bonding. To remove the residue may be of the resist material remaining after solvent stripping of the program, it may be a plasma ashing (e.g., O ₂₎ procedures apply to the side after the wafer.

Referring to the procedure 10 of FIG. 1, a metal layer can be formed on the surface of the substrate 32 in block 17. 2K and 2L show examples of an adhesive layer/seed layer and a thicker metal layer.

2K shows that in some embodiments, an adhesive layer 45, such as a nickel vanadium (NiV) layer, can be formed on the back side of the substrate and the surface of via 44 by, for example, sputtering. Preferably, the surfaces are cleaned (e.g., by HCl) prior to application of NiV. 2K also shows that a seed layer 46, such as a thin gold layer, can be formed on the adhesive layer 45 by, for example, sputtering. This seed layer promotes the formation of a thick metal layer 47, such as one of the thick gold layers shown in Figure 2L. In some embodiments, the thick gold layer can be formed by an electroplating technique.

In certain embodiments, the gold plating procedure can be performed after a pre-plating cleaning procedure (eg, O ₂ plasma ashing and HCl cleaning). The electroplating can be performed to form a gold layer of about 3 microns to 6 microns to promote the electrical connectivity and thermal transfer functionality described above. The plated surface can undergo a post-plating cleaning procedure (eg, O ₂ plasma ashing).

The metal layer formed in the above manner is formed to be electrically connected to one of the metal planes on the back side of the metal pad 35 on the front side. This connection provides a robust electrical reference (e.g., ground potential) to the metal pad 35. This connection may also provide an efficient path for conducting heat between the backside metal plane and the metal pad 35.

Thus, it can be seen that the integrity of the metal layer in via 44 and its manner of attachment to metal pad 35 and the backside metal plane can be important factors for the performance of various devices on the wafer. Therefore, it is desirable to implement the metal layer formation in an efficient manner. More specifically, it is desirable to provide an effective metal layer formation in features that may not be readily accessible, such as vias.

Referring to the procedure 10 of Figure 1, a wafer having a metal layer formed on its back side can undergo a deep street formation process (block 18). 2M through 2O show different stages during the formation of a deep etch 50. This deep etch is described herein as being formed from the back side of the wafer and extending through the metal layer 52 to facilitate subsequent grain singulation. It will be understood that one or more of the features set forth herein may also be implemented for other deep etched features on or near the surface behind the wafer. In addition, other deep etched features may be formed for purposes other than facilitating the singulation process.

To form a etch resist layer 48 (Fig. 2M) defining one of the etch openings 49, photolithography can be utilized. Coating a resist material on the surface after the substrate, exposing a mask pattern, and developing the exposed resist coating can be accomplished in a known manner.

To form a deep etch 50 (Fig. 2N) through one of the metal layers 52, techniques such as wet etching (by means of a chemical such as potassium iodide) can be utilized. A pre-etch cleaning process (eg, O ₂ plasma ashing) can be performed prior to the etching process. In various embodiments, the thickness of the resist 48 and the manner in which the resist is applied to the back side of the wafer can be used to prevent certain undesirable effects, such as via rings, and through vias during the etching process. The etching of the edges is an important consideration.

Figure 2O shows the formed deep etch 50 where the resist layer 48 is removed. To remove the resist layer 48, a photoresist stripping solvent such as NMP (N-methylpyridine-2-pyrrolidone) can be applied using, for example, a batch of spray tool. To remove the residue may be of the resist material remaining after solvent stripping of the program, it may be a plasma ashing (e.g., O ₂₎ procedures apply to the side after the wafer.

In the exemplary backside wafer procedure illustrated with reference to Figures 1 and 2, the formation of the deep etch (50) and the removal of the resist (48) no longer need to be mounted to one of the carrier plates. . Thus, referring to the procedure 10 of Figure 1, the wafer is debonded or separated from the carrier plate in block 19. 2P through 2R show different stages of separation and cleaning of wafer 30.

In some embodiments, the separation of wafer 30 from carrier plate 40 can be performed with wafer 30 under carrier plate 40 (FIG. 2P). To separate the wafer 30 from the carrier plate 40, the adhesive layer 38 can be heated to reduce the bonding properties of the adhesive. For exemplary Crystalbond ^TM binder, up to about one to one 130 ℃ 170 ℃ temperature range allows the melted adhesive 30 to facilitate wafer carrier plate 40 is more easily separated. Some form of mechanical force can be applied to wafer 30, carrier plate 40, or some combination thereof to achieve this separation (arrow 53 in Figure 2P). In various embodiments, achieving such separation of the wafer in the event of reducing the likelihood of scratches and cracks on the wafer can be an important program parameter for promoting high yield of one of the good grains.

In FIGS. 2P and 2Q, the adhesive layer 38 is depicted as being held with the wafer 30 instead of the carrier plate 40. It will be appreciated that certain adhesives may remain with the carrier sheet 40.

2R shows that the adhesive 38 is removed from the front side of the wafer 30. It may be by a cleaning solution (e.g., acetone) to remove the binder, and may be by (e.g.) a plasma ashing (e.g., O ₂₎ of a program further remove remaining residue.

Referring to the procedure 10 of Figure 1, the debonded wafer of block 19 can be tested (block 20) in several ways prior to singulation. This post-bonding test can include testing the resistance of the metal interconnect formed on the through-wafer via, for example, using program control parameters on the front side of the wafer. Other tests address quality control associated with various programs, such as through-wafer via etching, seed layer deposition, and gold plating quality.

Referring to the procedure 10 of Figure 1, the tested wafer can be diced to produce a plurality of dies (block 21). In certain embodiments, at least some of the deep etch channels formed in block 18 may facilitate the cutting process. 2S shows a cut 61 that is being performed along the deep etch track 50 to separate an array of dies 60 into individual dies. This cutting procedure can be achieved, for example, by a diamond scribing and roller breaker, saw or laser.

In the context of laser cutting, Figure 2T shows one effect on the edge of adjacent grain 60 cut by a laser. When the laser is cut 61, a rough edge feature 62 (commonly referred to as recasting) is typically formed. The presence of such a recast can increase the likelihood that a crack will form therein and propagate into the functional portion of the corresponding die.

Thus, referring to the procedure 10 of FIG. 1, an etching process using one of acidic and/or alkaline chemicals (e.g., similar to the examples set forth with reference to block 15) can be performed in block 22. This etching of the recast feature 62 and the defects formed by the recast increases the grain strength and reduces the likelihood of grain crack rupture (Fig. 2U).

Referring to the procedure 10 of Figure 1, the re-etched etched grains can be further inspected and subsequently packaged (Fig. 2V).

As explained herein with respect to Figures 1 and 2, certain operations in the process 10 may benefit from having a wafer temporarily bonded to a carrier plate. Once such operations are completed, the wafer can be removed or unbonded from the carrier plate. Figures 3 through 7 show, by way of example, a joining device having a securing mechanism that reduces the likelihood of unwanted debris or small items being introduced into one of the areas where the joining procedure occurs.

It will be appreciated that one or more of the features associated with the de-bonding device and method can be implemented in the example through-wafer via procedure illustrated with reference to Figures 1 and 2 and in other processing situations. It will also be appreciated that one or more features associated with de-bonding devices and methods can be implemented in different types of semiconductor-based wafers including, but not limited to, materials such as The semiconductor materials are formed by their semiconductor-based wafers: Groups IV, III-V, II-VI, I-VII, IV-VI, V-VI, II-V; oxides; layered semiconductors; magnetic semiconductors; Organic semiconductors; charge transfer complexes and other semiconductors. In addition, some of the features set forth herein may also be implemented in situations involving non-semiconductor-based wafers being separated from another structure.

Various wafer processing operations can be performed in a controlled environment, such as those associated with various clean rooms. In addition to other controlled environmental factors, the "cleanability" of a clean room greatly reduces the concentration of small particles (eg, dust particles, lint, etc.) circulating in the air to reduce stability on the wafer. The possibility of particles. The harmful effects of such particles on the wafer are known.

3A and 3B show side and plan views of the bonding apparatus 100 having one of the lower member 102 and an upper member 104. The lower member 102 and/or the upper member 104 can define a bonding chamber 106 into which a wafer (not shown) can undergo a bonding procedure with one of the carrier plates (not shown). In some cases, this bonding procedure can involve curing one of the adhesives that have been applied (eg, spin-on). This curing process can be facilitated by the application of heat. Bonding device 100 can be suitably configured to produce a bonded assembly of one of the wafer and the carrier plate with the wafer substantially parallel to the carrier plate.

The upper member 104 is movable (as indicated by an arrow 124) to allow the engagement chamber 106 to be opened and closed. The upper member 104 can be opened to allow loading of the uncured wafer-carrier assembly and unloading the cured wafer-carrier assembly. The upper member 104 can be closed to facilitate the curing process.

The opening and closing of the upper member 104 can be facilitated by a handle 108 that is attached to the upper member 104 by, for example, one or more screws 110. The handle 108 can also be attached to a hinge 114 by, for example, one or more screws 112. The hinge 114 can be coupled to a support member 118 via a pivot 116 to allow the upper member 104 to rotate about the pivot 116 between its open and closed positions.

When in the closed position, the upper member can be secured to the lower member by a plurality of screws 120. In the example shown in Figure 3B, four of these screws (120a through 120d) are depicted as being distributed over the circumference to provide a distributed holding force. As shown in FIG. 3A, each of the screws 120 can include a threaded portion 122 that extends through the upper member 104 to engage a portion of the lower member 102 to allow the screw to be tightened to secure the upper member 104 to Lower part 102.

Tightening and removing the screw 120 involves surface engagement between the threaded portion 122 of the screw 120 and its respective mating threads on the lower member 102. Thus, such surface engagement can cause small metals and other particles to create and fall or inexplicably introduce into the joint chamber 106. Some of these particles may become undesirably attached to one of the wafers in which they are being bonded.

In the example shown in FIGS. 3A and 3B, the screw 120 is shown extending into the engagement chamber 106. However, even if the screw 120 does not invade the joint chamber 106, it needs to extend through the mating surface of the upper member 104 and the lower member 102. Thus, any undesired particles resulting from the threaded engagement can collect on either or both of the mating surfaces and move into the joint chamber 106 during the open and closed operations.

4 through 7 illustrate various examples of a securing mechanism that can reduce or substantially eliminate one of the possibilities of introducing undesirable particles from the securing mechanism into the joining chamber to secure a joining device 202. Upper member 220 and lower member 222. In certain embodiments, the immobilization mechanism can be configured to reduce the amount of undesired ions produced and/or without having to extend through one of the components (eg, upper component 220) One of the structures to the other (e.g., lower member 222) provides a securing force to achieve this reduction in the event that the upper member 220 and the lower member 222 are pulled together.

FIG. 4 shows an example bonding station 200 having a number of wafer bonding devices 202. In certain embodiments, upper member 220, lower member 222, and handle 224 are configured to operate in a manner similar to the components (104, 102, 108) set forth with reference to Figures 3A and 3B. In certain embodiments, the upper component 220 can be secured to the lower component 222 by one or more securing mechanisms 230 as set forth herein.

4 shows an example bonding station 200 that can include a substrate (within housing 208) that supports a lower member 222. The substrate can also be mechanically coupled to the support legs 204 to urge the table 200 to be positioned on a surface 206. The station 200 can also include a control assembly 210 for controlling various operational parameters, such as temperature for curing the adhesive, gas pressure for applying pressure to the wafer and the carrier plate in a controlled manner, and for The wafer-carrier assembly vacuum is held during the curing process. In Figure 4, a vacuum handling pen 212 is also shown. This device can be used to manipulate the wafer-carrier assembly during loading and unloading operations.

In some embodiments, each bonding device 202 can include one or more securing mechanisms 230. In the example shown, there are two of these mechanisms 230a, 230b for each bonding device 202. In other embodiments, the number of such mechanisms may also be greater or less than two.

5A and 5B show bonding device 202 having (Fig. 5B) and without (Fig. 5A) a wafer-carrier assembly 260 in the bonding chamber. With the upper member 220 in its upper position (eg, rotated about a pivot 246), it can be seen that the joint chamber can be sized to receive one of the wafer-carrier assemblies 260 platform surface 256. Surface 256 can define a vacuum aperture 258 that is in communication with a vacuum device (not shown) and configured to provide a suction hold to wafer-carrier assembly 260. This vacuum aperture 258 can also facilitate removal of air pockets that may have been formed between the surface 256 and the wafer-carrier assembly 260.

The upper member 220 can include a pneumatic diaphragm 244 that is configured to provide a broad thrust to the wafer-carrier assembly 260 during the curing process. The partition 244 can be actuated by a pressurized gas delivered through an aperture 242 that communicates with a region of the rear of the partition 244. The aperture 242 in the upper member 220 can be in communication with an annular space 254 defined between the inner seal ring 252 and the outer seal ring 250 and a pressure input aperture 248. Thus, as the upper member 220 descends onto the lower member 222, the engagement surface 240 of the upper member engages the seal rings 252, 250 to separate the pressure system (including the annular space 254) from the vacuum system of the engagement chamber and from the exterior.

Referring to Figure 5A, the securing mechanism 230 can be secured to the substrate (not shown) by a support rod 232.

In Figure 6A, the upper member 220 has been lowered to its closed position to engage the lower member 222. Such closing and opening operations may be facilitated by a handle 224 that is attached to the upper member 220 by one or a plurality of fasteners, such as screws 270. Handle 224 is illustrated as being mounted to a hinge by one or more fasteners, such as screws 272.

In Figure 6A, the upper member 220 has been lowered but not secured by the securing mechanisms 230a, 230b. In Figure 6B, the securing mechanisms 230a, 230b are in their fixed positions.

In certain embodiments, each of the securing mechanisms 230 can include a base 300 that allows the securing mechanism 230 to rotate about the support rod 232 (about the axis of the support rod 232) to facilitate opening and closing of the upper member 220. One way is mounted on the support rod 232. Once the securing mechanism 230 is rotated to permit engagement with the upper member 220 (the tie 230b of Figure 6A), a push link 280 can be swayed (arrow 282) such that its engagement end 284 can engage the upper surface 274 of the upper member 220. After engagement, the push link 280 can be pushed further against the upper surface 274 and generally maintained there to secure the upper member 220 against the lower member 222.

In some embodiments, the securing mechanism 230 can include a support beam 290 that pivotally mounts (292) to the base 300 (of the securing mechanism 230). The push link 280 can be mounted at a distance from the pivot 292 such that the pivot 292 facilitates movement 282 of the push link toward and away from the upper surface 274 of the upper member 220. In some embodiments, the orientation of the push link relative to the support beam 290 can be approximately vertical; however, the angle between the two can be greater than or less than 90 degrees to facilitate pushing the link 280 with the upper member 220. Properly fixed engagement.

In some embodiments, the distance between the engagement end 284 of the push link and its mounting position on the support beam 290 can be adjusted to promote, for example, the amount of thrust applied to the upper member. In the illustrated example, the push link 280 can include a threaded portion for mounting to the support beam 290 by a threaded nut 286. Accordingly, the push link 280 can be moved relative to the support beam 290 by properly loosening and tightening the nut 286.

In some embodiments, the position at which the push link 280 is mounted (to the support beam 290) can be selected such that when secured, the push link 280 is pushed over a selected position (eg, a peripheral portion) of the upper surface 274. In the example shown in FIGS. 6A and 6B, the mounting position of the push link 280 along the support beam 290 can be adjusted by loosening one or more of the nuts 286 to slide the mounting onto the support beam 290. A desired position and tighten the nuts 286. Thus, as shown in FIG. 6B, two such thrusts on the upper member 220 (provided by two exemplary push rods) can provide a distributed securing force on the upper member 220.

In some embodiments, a plurality of such securing mechanisms 230 can be generally evenly distributed about the upper member 220. In the example shown, the two fixation mechanisms 230 are depicted as being separated by about 180 degrees.

In some embodiments, the securing mechanism 230 can include a latching handle 294 that is configured to urge the push link 280 (via the support member 290) to its fixed position and latch in this position Fixed mechanism 230. To provide this feature, the latch handle 294 can be pivotally mounted (296) to the base and includes a latching mechanism (e.g., a cam action) that is placed on the upper member by the push link 280. The handle 294 is pushed toward the center of the upper member 220 after 220 to lock the securing mechanism 230. Unlocking of the securing mechanism 230 can be achieved by pushing the handle 294 away from the center of the upper member 220 to allow the push link 280 to move away from the upper member 220.

In certain embodiments, a securing mechanism having some or all of the foregoing features can be configured to provide a quantity of force that results in acceptable sealing functionality for one of the seals 250, 252. On the other hand, the amount of force is preferably less than the amount that will be crushed and can damage the wafer-carrier assembly.

In some embodiments, the amount of force can also be selected to overcome the tendency of the upper member 220 to separate from the lower member 222 as the spacer 244 is pushed over the wafer-carrier assembly.

Figure 7 shows the upper part 220 in its open position after completion of the joining procedure. The bonded wafer-carrier assembly 260 is shown removed from the lower member 222 by the vacuum handling device 212 previously mentioned in FIG.

In the non-limiting examples set forth herein, the securing mechanism is configured to operate as a clamp or a clamp-like device to provide a thrust to an upper component (also referred to herein as a cover). It will be appreciated that several other designs can also be implemented to provide one or more of the functionality as set forth herein.

As set forth herein, the cover can include a first opposing side and a second opposing side, wherein the first side is sized to engage the lower component when the cover is in the closed position (also referred to herein as a One of the base members receives the side, and wherein the second side is separated from the first side by a substantially solid plate. The first side of the cover and the second side are separated by the separation of the plate. The undesired particles caused by the operation of the fixing mechanism are introduced to the first side of the cover and/or the joint chamber. possibility.

Unless the context clearly requires otherwise, the words "including", "including" and the like should be interpreted as having an inclusive meaning that is contrary to an exclusive or exhaustive meaning throughout the description and claims; that is, Contains, but is not limited to, the meaning. As used generally herein, the phrase "coupled" refers to two or more elements that may be directly connected or connected by one or more intermediate elements. In addition, the words "herein," "above," "below," and the like, when used in this application, are used to refer to this application as a whole and not to any specific part of the application. . The wording of the above embodiments using singular or plural forms may also include the plural or singular, respectively. Referring to the wording "or" in the list of one or two or more items, the wording covers all of the following explanations of the wording: any of the items in the list, all of the items in the list And any combination of items in the list.

The above detailed description of the embodiments of the invention is not intended to be While the invention has been described with respect to the specific embodiments and examples of the present invention, it will be understood by those skilled in the art that various equivalent modifications can be made within the scope of the invention. For example, although the program or block is presented in a predetermined order, alternative embodiments may perform a routine with steps or a system with blocks in a different order, and may delete, move, add, subdivide, combine And / or modify some programs or blocks. Each of these programs or blocks can be implemented in a variety of different manners. Moreover, although programs or blocks are sometimes shown as being serially executed, they can be executed in parallel or can be executed at different times.

The teachings of the present invention provided herein are applicable to other systems, not necessarily the systems set forth above. The elements and acts of the various embodiments described above can be combined to provide additional embodiments.

Although certain embodiments of the invention have been described, the embodiments are presented by way of example only and are not intended to limit the scope of the invention. In fact, the novel methods and systems set forth herein may be embodied in a variety of other forms; and in addition, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the invention. The scope of the claims and the equivalents thereof are intended to cover such forms or modifications that fall within the scope and spirit of the invention.

30. . . Wafer

31. . . section

32. . . Substrate layer

33. . . Transistor

34a. . . Base

34b. . . Emitter

34c. . . Base

34d. . . Collector

35. . . Metal pad

38. . . Adhesive layer

39. . . Magnification

40. . . Carrier board

42. . . Resist material

43. . . Etching opening

44. . . Through wafer via

45. . . Adhesive layer

46. . . Seed layer

47. . . Thick metal layer

48. . . Resist layer

49. . . Etching opening

50. . . Deep eclipse

52. . . Metal layer

53. . . arrow

60. . . Grain

61. . . Cutting

62. . . Rough edge feature

100. . . Bonding equipment

102. . . Lower part

104. . . Upper part

106. . . Joint room

108. . . handle

110a. . . Screw

110b. . . Screw

112. . . Screw

114. . . Hinge

116. . . Pivot

118. . . Support member

120. . . Screw

120a. . . Screw

120b. . . Screw

120c. . . Screw

120d. . . Screw

122. . . Threaded part

124. . . arrow

200. . . Bonding table

202. . . Bonding equipment

204. . . Support leg

206. . . surface

208. . . shell

210. . . Control component

212. . . Vacuum disposal pen

220. . . Upper part

222. . . Lower part

224. . . handle

230. . . Fixed mechanism

230a. . . Fixed mechanism

230b. . . Fixed mechanism

232. . . Support rod

232a. . . Support rod

232b. . . Support rod

240. . . Engagement surface

242. . . Porosity

244. . . Partition

246. . . Pivot

248. . . Pressure input pore

250. . . Inner seal ring

252. . . Outer seal ring

254. . . Ring space

256. . . Platform surface

258. . . Vacuum pore

260. . . Wafer-carrier assembly

270. . . Screw

272. . . Screw

274. . . Upper surface

280. . . Pushing the connecting rod

280a. . . Pushing the connecting rod

280b. . . Pushing the connecting rod

282. . . arrow

284. . . Meshing end

284a. . . Meshing end

284b. . . Meshing end

286. . . Threaded nut

290. . . Support beam

292. . . Pivot

294. . . Locking handle

294a. . . Locking handle

294b. . . Locking handle

296. . . Pivot

300. . . Base

H1. . . thickness

H2. . . thickness

H3. . . height

H4. . . thickness

T _assembly . . . Total thickness

W1. . . width

W2. . . width

1 shows an exemplary wafer processing sequence for forming a through-wafer feature such as a via.

2A through 2V show examples of structures at various stages of the processing sequence of Fig. 1.

3A and 3B show an example of a bonding apparatus in which a plurality of fixing mechanisms, such as threaded plugs, extend through a wafer bonding chamber or extend adjacent thereto such that undesirable particles generated by the mechanism can be introduced into the crystal. circle.

4 shows an example wafer bonding station having a number of bonding devices, each bonding device having one or more fixing mechanisms that reduce the likelihood of undesirable effects associated with FIGS. 3A and 3B.

Figures 5A and 5B show the joining apparatus of Figure 4 in its open configuration and closed configuration.

6A and 6B show the joining apparatus of Fig. 4 in a closed configuration before and after the fixing mechanism applies a fixing force.

Figure 7 shows the joining apparatus of Figure 4 in the case where the joining procedure has been completed.

202. . . Bonding equipment

230a. . . Fixed mechanism

230b. . . Fixed mechanism

274. . . Upper surface

280a. . . Pushing the connecting rod

280b. . . Pushing the connecting rod

284a. . . Meshing end

284b. . . Meshing end

294a. . . Locking handle

294b. . . Locking handle

Claims (17)

An apparatus for joining a wafer to a board, the apparatus comprising: a base member having a receiving side sized to receive a configuration to engage a wafer and a board; a cover having a first opposing side and a second opposing side and configured to be placed in an open position and a closed position relative to the base member, the open position facilitating the wafer and the plate on the base member Positioning for bonding and removing the wafer-to-plate bonded assembly from the base member after the bonding, the closed position facilitating the bonding of the wafer to the plate, the first side being sized to The receiving side of the base member is engaged when the cover is in the closed position, the receiving side of the base member defining an engagement chamber with the first side of the cover when the cover is in the closed position, the engagement chamber Configuring to hold the wafer and the plate; and one or more securing mechanisms, each securing mechanism configured to engage the second side of the cover and provide a securing force when the cover is in the closed position Applied to the second of the cover On the receiving side so as to abut against the base of the member pushes the cover, the fixing system of forces imposed by the outside of the bonding chamber. The apparatus of claim 1 wherein the cover comprises a solid plate between the first side and the second side of the cover. The apparatus of claim 1 wherein the cover is configured to substantially separate the engagement chamber from the second side of the cover. The apparatus of claim 1 wherein the cover further comprises a baffle disposed on the first side of the cover, the baffle being sized and configured to A bonding force is supplied to the wafer and the board during the bonding. The apparatus of claim 4, wherein the cover includes a pressure passage between a portion of the first side thereof and a position behind the partition, the pressure passage permitting gas pressure to be provided to the position to allow the partition to provide the Joining force. The apparatus of claim 5, wherein the receiving side of the base member defines a pressure passage configured to receive gas from a source and to communicate with the pressure passage of the cover to provide the gas pressure to the partition The position behind the board. The apparatus of claim 6 wherein the base member further comprises a suction opening in communication with a suction source, the suction opening being positioned to hold the wafer and the panel assembly during the engagement. The apparatus of claim 7, wherein the base member further comprises a first seal and a second seal disposed on the receiving side, the first seal being configured to provide a gas between the exterior and the pressure channel of the base member The second seal is configured to provide a gas seal between the pressure channel of the base member and the joint chamber. The apparatus of claim 1, wherein the fixing mechanism comprises a clamping device mounted to a mounting structure coupled to the base member, the clamping device having a push link configured to be configured The securing force is provided by engaging the second side of the cover and pushing against the second side of the cover by one of its ends. The device of claim 9, wherein the mounting structure is positioned around the periphery of the base member and the periphery of the cover when the cover is in the closed position One of the outer locations. The apparatus of claim 10, wherein the securing mechanism further comprises a support beam configured to couple the push link to the mounting structure, the support beam being further configured to be in the closed position of the cover The push link is positioned to a position within the perimeter of the cover. The apparatus of claim 11, wherein the push link and the support beam are configured to permit adjustment of the length of the push link from the support beam to the end of the second side that engages the cover. The apparatus of claim 11 wherein the securing mechanism further comprises a latching handle configured to engage and latch when the push link is providing the securing force to the second side of the cover The support beam. The apparatus of claim 13 wherein the latching handle is configured to lock the support beam by a cam action. A wafer bonding station having one or more of the devices of claim 1. An apparatus for securing a cover of a wafer bonding apparatus, the apparatus comprising: a substrate coupled to a support structure of the wafer bonding apparatus and disposed in the cover when the cover is in a closed position One of the peripheral outer portions, when the cover is in the closed position, a bottom side of the cover defines a joint chamber with a receiving surface supported by the support structure, the joint chamber configured to hold a wafer and a support beam having a pivotally mounted to the base first End to allow the support beam to be placed in a disengaged position and an engaged position; a push link having an axis and mounted to the support beam at a mounting location on the support beam such that the push link is opposite Extending from the mounting position to a pushing end at a distance from the mounting position, the mounting position is separated from the first end of the supporting beam by a distance, at least one of the length, the angle and the distance Selecting such that the push end of the push link outside the engagement chamber engages an upper surface of the cover in its closed position when the support beam is in the engaged position, wherein the axis of the push link One of the planes defined by the upper surface of the cover is less than about 20 degrees normal; and a latching mechanism configured to lock the support beam in the engaged position and to unlock from the engaged position The support beam. The device of claim 16, wherein the axis of the push link is less than about 5 degrees from the normal.