TWI485411B - Current sensor substrate and current sensor - Google Patents

Current sensor substrate and current sensor Download PDF

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Publication number
TWI485411B
TWI485411B TW101125454A TW101125454A TWI485411B TW I485411 B TWI485411 B TW I485411B TW 101125454 A TW101125454 A TW 101125454A TW 101125454 A TW101125454 A TW 101125454A TW I485411 B TWI485411 B TW I485411B
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Taiwan
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support portion
current sensor
conversion element
disposed
magnetoelectric conversion
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TW101125454A
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Chinese (zh)
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TW201307865A (en
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鈴木健治
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旭化成微電子股份有限公司
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Publication of TWI485411B publication Critical patent/TWI485411B/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
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Description

電流感測器用基板及電流感測器Current sensor substrate and current sensor

本發明係關於一種電流感測器用基板及電流感測器，更詳細而言，係關於一種包含具有U字形電流路徑之一次導體之電流感測器用基板及電流感測器。The present invention relates to a substrate for a current sensor and a current sensor, and more particularly to a substrate for a current sensor including a primary conductor having a U-shaped current path, and a current sensor.

先前，作為測定導體中流動之電流之電流感測器，已知藉由測定電流流動而檢測於周圍產生之磁通之方法。例如，有於測定電流流動之一次導體附近配置磁電轉換元件之方法。Conventionally, as a current sensor for measuring a current flowing in a conductor, a method of detecting a magnetic flux generated around by measuring a current flow is known. For example, there is a method of arranging a magnetoelectric conversion element in the vicinity of a primary conductor for measuring a current flow.

於圖1(與專利文獻1的圖7對應)顯示先前之電流感測器的一例。於導電性夾片204上形成U字形的電流導體部204a，並將霍爾元件208配置於該U字形的內側。由於U字形內側的中心附近磁通密度較高，因此測定感度會提高。An example of the prior current sensor is shown in FIG. 1 (corresponding to FIG. 7 of Patent Document 1). A U-shaped current conductor portion 204a is formed on the conductive clip 204, and the Hall element 208 is disposed inside the U-shape. Since the magnetic flux density near the center of the U-shaped inner side is high, the measurement sensitivity is improved.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]國際公開第2006/130393號手冊[Patent Document 1] International Publication No. 2006/130393

然而，圖1揭示之電流感測器需要另行設置導電性夾片204而與引線端子202a~202d耦合等，製造上花費功夫，招致成本增加。However, the current sensor disclosed in FIG. 1 requires a separate conductive clip 204 to be coupled to the lead terminals 202a to 202d, etc., which is costly to manufacture and incurs an increase in cost.

本發明係鑒於此種問題點而完成者，其第1目的在於在包含具有U字形電流路徑之一次導體之電流感測器中降低 製造成本。又，第2目的在於提供一種該電流感測器用的基板。The present invention has been made in view of such a problem, and its first object is to reduce in a current sensor including a primary conductor having a U-shaped current path. manufacturing cost. Further, a second object is to provide a substrate for the current sensor.

為達成此種目的，本發明第1態様之電流感測器用基板，其特徵為包含：具有供被測定電流流動之U字形電流路徑之一次導體、配置於前述U字形開口部且用以支撐磁電轉換元件之支撐部、及連接於前述支撐部之引線端子，且前述支撐部不與前述U字形電流路徑電性連接。In order to achieve the above object, a substrate for a current sensor according to a first aspect of the present invention includes: a primary conductor having a U-shaped current path through which a current to be measured flows, and a U-shaped opening portion for supporting the magnetoelectric a support portion of the conversion element and a lead terminal connected to the support portion, and the support portion is not electrically connected to the U-shaped current path.

又，可行的是，本發明之第2態様係在第1態様中，前述一次導體含有連接於前述U字形電流路徑之一次導體端子，且前述一次導體端子在與前述電流路徑的前述U字形開口方向反方向上延伸，前述引線端子在與前述一次導體端子延伸之方向反方向上延伸。Further, in a second aspect of the present invention, in the first aspect, the primary conductor includes a primary conductor terminal connected to the U-shaped current path, and the primary conductor terminal is in the U-shaped opening with the current path The direction extends in the opposite direction, and the lead terminal extends in a direction opposite to a direction in which the primary conductor terminal extends.

又，可行的是，本發明之第3態様係在第1或第2態様中，前述電流感測器用基板的前述支撐部具有：配置於前述U字形的前述開口部之第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部之第2支撐部。Further, in the first or second aspect of the present invention, the support portion of the current sensor substrate includes: a first support portion disposed in the U-shaped opening; and Adjacent to the first support portion, the second support portion is not disposed in the opening portion.

又，可行的是，本發明第4態様之電流感測器，其特徵為包含：如第1至3中任一態様之電流感測器用基板；及配置於前述電流感測器用基板的前述支撐部，且包含檢測自在前述電流感測器用基板的前述電流路徑中流動之電流所產生之磁通之磁電轉換元件之IC晶片，且前述磁電轉換元件在俯視下配置於前述電流路徑的前述U字形之內側。Moreover, the current sensor according to the fourth aspect of the present invention is characterized by comprising: the substrate for a current sensor according to any one of the first to third aspects; and the support disposed on the substrate for the current sensor And an IC chip including a magnetoelectric conversion element that detects a magnetic flux generated from a current flowing in the current path of the current sensor substrate, and the magnetoelectric conversion element is disposed in the U-shape of the current path in plan view The inside.

又，可行的是，本發明之第5態様係在第3態様中，前述 磁電轉換元件接近前述電流路徑的前述U字形之角落部而配置。Further, it is possible that the fifth state of the present invention is in the third state, the foregoing The magnetoelectric conversion element is disposed close to a corner portion of the U-shaped shape of the current path.

又，可行的是，本發明第6態様之電流感測器，其特徵為包含：如第3態様之電流感測器用基板；配置於前述電流感測器用基板的前述第1支撐部，且檢測自在前述電流感測器用基板的前述電流路徑中流動之電流所產生之磁通之磁電轉換元件、及配置於前述電流感測器用基板的前述第2支撐部，用以處理來自前述磁電轉換元件的輸出信號之IC晶片，且前述磁電轉換元件係在俯視下配置於前述電流路徑的前述U字形之內側之化合物半導體磁性感測器。Moreover, the current sensor according to the sixth aspect of the present invention is characterized in that: the substrate for a current sensor according to the third state; the first support portion disposed on the substrate for the current sensor, and detecting a magnetoelectric conversion element for magnetic flux generated by a current flowing in the current path of the current sensor substrate; and the second support portion disposed on the current sensor substrate for processing the magnetoelectric conversion element An IC chip that outputs a signal, and the magnetoelectric conversion element is a compound semiconductor magnetic sensor disposed inside the U-shape of the current path in plan view.

可行的是，本發明之第7態様係在第4至6中任一態様中，前述磁電轉換元件為霍爾元件。It is possible that the seventh aspect of the present invention is the fourth aspect, wherein the magnetoelectric conversion element is a Hall element.

可行的是，本發明之第8態様係在第4至7中任一態様中，於前述電流感測器用基板的前述支撐部中設置有階差，前述磁電轉換元件的感磁面以與前述一次導體的高度大致相等之方式設置。According to an eighth aspect of the present invention, in the fourth aspect of the present invention, the step of the substrate for the current sensor is provided with a step, and the magnetic sensitive surface of the magnetoelectric conversion element is The height of the primary conductors is set substantially equal.

可行的是，本發明之第9態様係在第4至7中任一態様中，於前述電流感測器用基板的前述支撐部中設置有階差，且前述階差的大小係將前述磁電轉換元件的厚度設為t1、前述1次導體的厚度設為t2時大於0而小於2×t1+t2之值，前述階差係使前述磁電轉換元件的感磁面之高度降低之方向的階差。It is possible that the ninth aspect of the present invention is any one of the fourth to seventh aspect, wherein the step of the substrate for the current sensor is provided with a step, and the magnitude of the step is to convert the magnetoelectricity. The thickness of the element is t1, and the thickness of the primary conductor is greater than 0 and less than 2×t1+t2 when t2, and the step is a step in which the height of the magnetic sensitive surface of the magnetoelectric conversion element is lowered. .

根據本發明，可使電流感測器用基板及電流感測器的構 成為抑制零件個數之簡便者，從而降低製造成本。According to the present invention, the current sensor substrate and the current sensor can be constructed It is easy to suppress the number of parts, thereby reducing manufacturing costs.

以下，參照圖式詳細地說明本發明的實施形態。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(第1實施形態)(First embodiment)

於圖2顯示第1實施形態之電流感測器。電流感測器200具備：具有U字形電流路徑210A及一次導體端子210B之一次導體210；具有用以支撐霍爾元件等之磁電轉換元件230A之支撐部220A、及引線端子220B_1、220B_2之信號端子側構件220(以下，簡略記為「構件220」。)；及配置於支撐部220A之具有檢測自在電流路徑210A中流動之電流產生之磁通之磁電轉換元件230A之IC晶片230。將一次導體210、構件220、及IC晶片230以樹脂240鑄模，而形成電流感測器200。除去IC晶片230及樹脂240之部分為電流感測器用基板。A current sensor according to the first embodiment is shown in Fig. 2 . The current sensor 200 includes: a primary conductor 210 having a U-shaped current path 210A and a primary conductor terminal 210B; a support portion 220A having a magnetoelectric conversion element 230A for supporting a Hall element or the like, and signal terminals of the lead terminals 220B_1 and 220B_2 The side member 220 (hereinafter, simply referred to as "member 220"); and the IC wafer 230 disposed on the support portion 220A having the magnetoelectric conversion element 230A for detecting the magnetic flux generated from the current flowing in the current path 210A. The primary conductor 210, the member 220, and the IC wafer 230 are molded with a resin 240 to form a current sensor 200. A portion of the IC chip 230 and the resin 240 is removed as a substrate for a current sensor.

引線端子220B_1表示連接於支撐部220A之引線端子，引線端子220B_2表示未連接於支撐部220A之引線端子。另，在對引線端子220B_1、220B_2共通之說明中，各引線端子只作為引線端子220B而參照。The lead terminal 220B_1 indicates a lead terminal connected to the support portion 220A, and the lead terminal 220B_2 indicates a lead terminal not connected to the support portion 220A. In the description of common to the lead terminals 220B_1 and 220B_2, each lead terminal is referred to only as the lead terminal 220B.

支撐部220A未電性連接於被測定電流流動之U字形電流路徑210A上，藉由如此構成，可確保一次導體210與IC晶片230之間的高絕緣耐壓。The support portion 220A is not electrically connected to the U-shaped current path 210A through which the current to be measured flows. With such a configuration, a high insulation withstand voltage between the primary conductor 210 and the IC wafer 230 can be ensured.

電流路徑210A的U字形在與一次導體端子210B_1延伸之方向反方向上具有開口部210C，構件220的支撐部220A配置於該開口部210C。且，構件220的引線端子220B_1在與 一次導體端子210B延伸之方向反方向上延伸。The U-shape of the current path 210A has an opening 210C in a direction opposite to the direction in which the primary conductor terminal 210B_1 extends, and the support portion 220A of the member 220 is disposed in the opening 210C. And, the lead terminal 220B_1 of the member 220 is The direction in which the primary conductor terminal 210B extends extends in the opposite direction.

支撐部220A與引線端子220B_1並非個別的構件，而是以金屬材料一體形成。即，支撐部220A與引線端子220B_1物理上成為一體，且亦物理上電性連接。The support portion 220A and the lead terminal 220B_1 are not individual members but are integrally formed of a metal material. That is, the support portion 220A is physically integrated with the lead terminal 220B_1 and is also physically electrically connected.

如上述般，由於U字形內側的中心附近磁通密度較高因而測定感度提高，因此，磁電轉換元件230A在俯視下配置於電流路徑210A的U字形之內側。特別是，由於在電流路徑210A的U字形之角落部210A'中磁通密度較高，因此較佳為接近角落部210A'而配置磁電轉換元件230A。As described above, since the measurement sensitivity is improved because the magnetic flux density near the center of the U-shape is high, the magnetoelectric conversion element 230A is disposed inside the U-shape of the current path 210A in plan view. In particular, since the magnetic flux density is high in the U-shaped corner portion 210A' of the current path 210A, it is preferable to arrange the magnetoelectric conversion element 230A close to the corner portion 210A'.

在本實施形態之電流感測器200中，分離一次導體210與構件220，使配置於構件220的支撐部220A之IC晶片230與一次導體210的電流路徑210A不接觸，而於兩者之間獲得間隙。該間隙可保證一次導體210與IC晶片230之間的絕緣，從而維持封裝內部之高耐壓。In the current sensor 200 of the present embodiment, the primary conductor 210 and the member 220 are separated, so that the IC wafer 230 disposed on the support portion 220A of the member 220 is not in contact with the current path 210A of the primary conductor 210, but between the two Get the gap. This gap ensures insulation between the primary conductor 210 and the IC wafer 230, thereby maintaining a high withstand voltage inside the package.

此外，藉由構件220的引線端子220B_1在與一次導體端子210B延伸之方向反方向上延伸，在樹脂240的外周可確保絕緣所需的沿面距離，且耐壓提高。若採用一次導體端子210B與引線端子220B_1自樹脂240的同一端面引出之構成，則兩者會在封裝外部鄰接，而難以確保充分的沿面距離。Further, since the lead terminal 220B_1 of the member 220 extends in the opposite direction to the direction in which the primary conductor terminal 210B extends, the creeping distance required for the insulation can be ensured on the outer circumference of the resin 240, and the withstand voltage is improved. When the primary conductor terminal 210B and the lead terminal 220B_1 are drawn from the same end surface of the resin 240, the two are adjacent to each other outside the package, and it is difficult to secure a sufficient creeping distance.

如此般，第1實施形態之電流感測器200較先前更抑制零件個數，且製造成本降低，除此以外，可謀求耐壓提高。As described above, the current sensor 200 according to the first embodiment suppresses the number of components more than before, and the manufacturing cost is lowered. In addition, the withstand voltage can be improved.

(第2實施形態)(Second embodiment)

於圖3顯示第2實施形態之電流感測器。電流感測器300 與第1實施形態的電流感測器200不同點在於，霍爾元件等之磁電轉換元件330A不包含於IC晶片330中，而另行設置。A current sensor according to a second embodiment is shown in Fig. 3 . Current sensor 300 The difference from the current sensor 200 of the first embodiment is that the magnetoelectric conversion element 330A such as a Hall element is not included in the IC wafer 330, and is separately provided.

支撐部220A具有：配置於U字形開口部210C之第1支撐部220A'；及與第1支撐部220A'鄰接，而未配置於開口部210C之第2支撐部220A"。於第1支撐部220A'配置檢測自在電流路徑210A流動之電流產生之磁通之磁電轉換元件330A，於第2支撐部220A"配置用以處理來自磁電轉換元件330A的輸出信號之IC晶片330。磁電轉換元件330A在俯視下配置於電流路徑210A的U字形之內側。The support portion 220A has a first support portion 220A' disposed in the U-shaped opening portion 210C and a second support portion 220A" disposed adjacent to the first support portion 220A' and not disposed in the opening portion 210C. The first support portion The 220A' is configured to detect the magnetoelectric conversion element 330A of the magnetic flux generated from the current flowing in the current path 210A, and the IC substrate 330 for processing the output signal from the magnetoelectric conversion element 330A is disposed in the second supporting portion 220A. The magnetoelectric conversion element 330A is disposed inside the U-shape of the current path 210A in plan view.

本實施形態之電流感測器300分為：僅配置磁電轉換元件330A，而配置於電流路徑210A的開口部210C之第1支撐部220A'；及配置信號處理用之IC晶片330，而不配置於開口部210C之第2支撐部220A"，且作為磁電轉換元件330A，使用InSb、InAs、GaAs等之感度高的化合物半導體磁性感測器。藉此，可使在電流路徑210A流動之電流的測定感度提高。The current sensor 300 of the present embodiment is divided into a first support portion 220A' in which the magnetoelectric conversion element 330A is disposed, and is disposed in the opening 210C of the current path 210A; and an IC wafer 330 for signal processing is disposed. In the second support portion 220A" of the opening portion 210C, a compound semiconductor magnetic sensor having high sensitivity such as InSb, InAs, or GaAs is used as the magnetoelectric conversion element 330A. Thereby, a current flowing in the current path 210A can be used. The sensitivity is measured to be improved.

此外，由於有必要配置於開口部210C的並非IC晶片330，而僅為磁電轉換元件330A，因此可縮小U字形電流路徑210A，且縮短全長。若電流路徑210A小型化，則U字形的內側之磁場集中提高，而可獲得電流的檢測感度提高。Further, since it is not necessary for the IC wafer 330 to be disposed in the opening portion 210C, but only the magnetoelectric conversion element 330A, the U-shaped current path 210A can be reduced and the overall length can be shortened. When the current path 210A is miniaturized, the magnetic field concentration inside the U-shape is increased, and the detection sensitivity of the available current is improved.

又，電流路徑210A雖因相較於一次導體210的其他部分較細，且電阻較高而發熱集中，但藉由本實施形態之小型 化，電流路徑210A的長度縮短，從而發熱量會降低。Further, since the current path 210A is thinner than the other portions of the primary conductor 210 and has a high electric resistance, the heat is concentrated. However, the present embodiment is small. The length of the current path 210A is shortened, so that the amount of heat generation is lowered.

又，作為U字形電流路徑的一形態，對電流路徑210A，亦可使用例如C字形、V字形、或與該等類似之形狀的電流路徑。Further, as one form of the U-shaped current path, a current path such as a C-shape, a V-shape, or the like may be used for the current path 210A.

此處，參照圖4A、圖4B及圖5A~5C，說明第2實施形態之電流感測器300的製造方法。關於第1實施形態亦相同。首先，由一片金屬板製作形成有所期望的圖案之引線框架。圖4A顯示與一個電流感測器對應之一部分。接著，將磁電轉換元件330A晶粒接合於第1支撐部220A'，將IC晶片330晶粒接合於第2支撐部220A"之後，進行打線接合(圖4B)。最後，將一次導體210、構件220、及IC晶片330以樹脂240鑄模，並進行引線切割，而利用成形加工形成高電壓側的一次導體端子210B及低電壓側的引線端子(信號端子)220B_1、220B_2。Here, a method of manufacturing the current sensor 300 according to the second embodiment will be described with reference to FIGS. 4A, 4B, and 5A to 5C. The same applies to the first embodiment. First, a lead frame having a desired pattern is formed from a single piece of metal. Figure 4A shows a portion corresponding to a current sensor. Next, the magnetoelectric conversion element 330A is die-bonded to the first support portion 220A', and the IC wafer 330 is die-bonded to the second support portion 220A", and then wire bonding is performed (FIG. 4B). Finally, the primary conductor 210 and the member are placed. 220 and the IC wafer 330 are molded by the resin 240 and subjected to wire cutting, and the primary conductor terminal 210B on the high voltage side and the lead terminals (signal terminals) 220B_1 and 220B_2 on the low voltage side are formed by molding.

圖5A係俯視圖，圖5B係前視圖，圖5C係右側視圖。Fig. 5A is a plan view, Fig. 5B is a front view, and Fig. 5C is a right side view.

接著，參照圖6及圖7說明圖3所示之電流感測器300之一次導體210與磁電轉換元件330A之位置關係。圖6係顯示第2實施形態之電流感測器中一次導體210與磁電轉換元件330A之位置關係之立體圖。圖7係顯示圖6之電流感測器300中A-A'剖面之圖。Next, the positional relationship between the primary conductor 210 and the magnetoelectric conversion element 330A of the current sensor 300 shown in FIG. 3 will be described with reference to FIGS. 6 and 7. Fig. 6 is a perspective view showing the positional relationship between the primary conductor 210 and the magnetoelectric conversion element 330A in the current sensor of the second embodiment. Figure 7 is a diagram showing the A-A' cross section of the current sensor 300 of Figure 6.

圖6所示之磁電轉換元件330A具有感磁面331，該感磁面331係以與一次導體210的高度大致相等之方式設置。在本實施形態中，如圖7所示般，利用例如半邊加工等之技術，於第1支撐部220A'中設置有階差，且於該第1支撐部 220A'的露出部設置磁電轉換元件330A。藉此，因一次導體210中流動之電流而產生之磁通以於相對感磁面331垂直方向上通過之方式產生。因此，磁電轉換元件330A的感磁面331之磁通密度較高，而電流感測器300的測定感度提高。The magnetoelectric conversion element 330A shown in FIG. 6 has a magnetic sensitive surface 331 which is provided to be substantially equal to the height of the primary conductor 210. In the present embodiment, as shown in FIG. 7, a step is provided in the first support portion 220A' by a technique such as half-edge machining, and the first support portion is provided in the first support portion. The exposed portion of 220A' is provided with a magnetoelectric conversion element 330A. Thereby, the magnetic flux generated by the current flowing in the primary conductor 210 is generated by passing in the vertical direction with respect to the magnetic sensitive surface 331. Therefore, the magnetic flux density of the magnetic sensitive surface 331 of the magnetoelectric conversion element 330A is high, and the measurement sensitivity of the current sensor 300 is improved.

更具體而言，較佳的是，階差的大小為將磁電轉換元件的厚度設為t1、1次導體的厚度設為t2之時大於0而小於2×t1+t2之值。特別是，若以使感磁面331的高度等於一次導體210的厚度中心之高度之方式設置階差，則磁電轉換元件330A的感磁面331之磁通密度最高，而電流感測器300的測定感度提高。More specifically, it is preferable that the magnitude of the step is a value obtained by setting the thickness of the magnetoelectric conversion element to t1 and the thickness of the first-order conductor to be t2 to be larger than 0 and smaller than 2×t1+t2. In particular, if the step is set such that the height of the magnetic sensitive surface 331 is equal to the height of the center of the thickness of the primary conductor 210, the magnetic flux density of the magnetic sensitive surface 331 of the magnetoelectric conversion element 330A is the highest, and the current sensor 300 The sensitivity is measured to be improved.

另，作為於支撐部設置階差之技術，並非限定於半邊加工，除此以外，亦可應用利用壓印加工進行精壓而機械性薄化之方法或彎曲加工等之方法。Further, the technique of providing a step on the support portion is not limited to the half-side processing, and a method of performing mechanical pressing and thinning by embossing, or a method of bending or the like may be applied.

200‧‧‧電流感測器200‧‧‧ current sensor

210‧‧‧一次導體210‧‧‧One conductor

210A‧‧‧電流路徑210A‧‧‧ Current path

210B‧‧‧一次導體端子210B‧‧‧One conductor terminal

210C‧‧‧開口部210C‧‧‧ openings

220‧‧‧信號端子側構件220‧‧‧Signal terminal side members

220A‧‧‧支撐部220A‧‧‧Support Department

220A'‧‧‧第1支撐部220A'‧‧‧1st support

220A"‧‧‧第2支撐部220A"‧‧‧2nd support

220B‧‧‧引線端子220B‧‧‧ lead terminal

220B_1‧‧‧引線端子220B_1‧‧‧ lead terminal

220B_2‧‧‧引線端子220B_2‧‧‧ lead terminal

230‧‧‧IC晶片230‧‧‧ IC chip

230A‧‧‧磁電轉換元件230A‧‧‧Magnetic Conversion Components

240‧‧‧樹脂240‧‧‧Resin

330‧‧‧IC晶片330‧‧‧IC chip

330A‧‧‧磁電轉換元件330A‧‧‧Magnetic Conversion Components

圖1係顯示先前之電流感測器之圖。Figure 1 is a diagram showing a prior current sensor.

圖2係顯示第1實施形態之電流感測器之圖。Fig. 2 is a view showing the current sensor of the first embodiment.

圖3係顯示第2實施形態之電流感測器之圖。Fig. 3 is a view showing the current sensor of the second embodiment.

圖4A係用以說明第2實施形態之電流感測器的製造方法之圖。Fig. 4A is a view for explaining a method of manufacturing the current sensor of the second embodiment.

圖4B係用以說明第2實施形態之電流感測器的製造方法之圖。Fig. 4B is a view for explaining a method of manufacturing the current sensor of the second embodiment.

圖5A係用以說明第2實施形態之電流感測器的製造方法之圖。Fig. 5A is a view for explaining a method of manufacturing the current sensor of the second embodiment.

圖5B係用以說明第2實施形態之電流感測器的製造方法之圖。Fig. 5B is a view for explaining a method of manufacturing the current sensor of the second embodiment.

圖5C係用以說明第2實施形態之電流感測器的製造方法之圖。Fig. 5C is a view for explaining a method of manufacturing the current sensor of the second embodiment.

圖6係顯示第2實施形態之電流感測器中一次導體與磁電轉換元件的位置關係之立體圖。Fig. 6 is a perspective view showing a positional relationship between a primary conductor and a magnetoelectric conversion element in the current sensor of the second embodiment.

圖7係顯示圖6之電流感測器中A-A'剖面之圖。Figure 7 is a diagram showing the A-A' cross section of the current sensor of Figure 6.

200‧‧‧電流感測器200‧‧‧ current sensor

210‧‧‧一次導體210‧‧‧One conductor

210A‧‧‧電流路徑210A‧‧‧ Current path

210B‧‧‧一次導體端子210B‧‧‧One conductor terminal

210C‧‧‧開口部210C‧‧‧ openings

220‧‧‧信號端子側構件220‧‧‧Signal terminal side members

220A‧‧‧支撐部220A‧‧‧Support Department

220B_1‧‧‧引線端子220B_1‧‧‧ lead terminal

220B_2‧‧‧引線端子220B_2‧‧‧ lead terminal

230‧‧‧IC晶片230‧‧‧ IC chip

230A‧‧‧磁電轉換元件230A‧‧‧Magnetic Conversion Components

240‧‧‧樹脂240‧‧‧Resin

Claims (10)

一種電流感測器，其特徵為包含：一次導體，其包含供被測定電流流動之U字形之電流路徑；支撐部，其配置於前述U字形之開口部且支撐磁電轉換元件；磁電轉換元件，其配置於前述支撐部且檢測自前述被測定電流產生的磁束；及連接於前述支撐部之引線端子；且前述支撐部不與包含前述U字形之電流路徑的一次導體電性連接。 A current sensor comprising: a primary conductor including a U-shaped current path for a current to be measured; a support portion disposed in the U-shaped opening and supporting the magnetoelectric conversion element; and a magnetoelectric conversion element, The magnetic flux generated by the current to be measured is detected on the support portion; and a lead terminal connected to the support portion; and the support portion is not electrically connected to the primary conductor including the U-shaped current path. 如請求項1之電流感測器，其中前述一次導體包含連接於前述U字形之電流路徑之一次導體端子；前述一次導體端子在與前述電流路徑的前述U字形之開口方向為相反之方向上延伸；前述引線端子在與前述一次導體端子延伸之方向為相反之方向上延伸。 A current sensor according to claim 1, wherein said primary conductor includes a primary conductor terminal connected to said U-shaped current path; said primary conductor terminal extending in a direction opposite to said opening direction of said U-shaped current path The lead terminal extends in a direction opposite to a direction in which the primary conductor terminal extends. 如請求項1或2之電流感測器，其中前述支撐部包含：配置於前述U字形的前述開口部之第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部之第2支撐部。 The current sensor according to claim 1 or 2, wherein the support portion includes: a first support portion disposed in the U-shaped opening portion; and a first support portion adjacent to the first support portion and not disposed in the opening portion The second support portion. 如請求項1或2之電流感測器，其中於前述支撐部，配置有包含前述磁電轉換元件之IC晶片； 前述磁電轉換元件在俯視下係配置於前述電流路徑的前述U字形之內側。 The current sensor of claim 1 or 2, wherein in the foregoing support portion, an IC chip including the foregoing magnetoelectric conversion element is disposed; The magnetoelectric conversion element is disposed inside the U-shape of the current path in plan view. 如請求項4之電流感測器，其中前述磁電轉換元件係接近前述電流路徑的前述U字形之角落部而配置。 The current sensor of claim 4, wherein the magnetoelectric conversion element is disposed close to a corner portion of the U-shaped shape of the current path. 如請求項3之電流感測器，其中前述磁電轉換元件係配置於前述第1支撐部；該電流感測器包含IC晶片，其配置於前述第2支撐部，用以處理來自前述磁電轉換元件的輸出信號；且前述磁電轉換元件係在俯視下配置於前述電流路徑的前述U字形之內側之化合物半導體磁性感測器。 The current sensor of claim 3, wherein the magnetoelectric conversion element is disposed in the first support portion; the current sensor includes an IC chip disposed on the second support portion for processing the magnetoelectric conversion element The output signal is a compound semiconductor magnetic sensor disposed inside the U-shape of the current path in plan view. 如請求項1之電流感測器，其中前述磁電轉換元件係霍爾元件。 A current sensor according to claim 1, wherein said magnetoelectric conversion element is a Hall element. 如請求項1或2之電流感測器，其中於前述支撐部設置有階差；且前述磁電轉換元件係以前述磁電轉換元件的感磁面與前述一次導體的高度大致相等之方式，設置於藉由前述支撐部之前述階差形成的露出部。 The current sensor of claim 1 or 2, wherein a step is provided in the support portion; and the magnetoelectric conversion element is disposed in such a manner that a magnetic sensitive surface of the magnetoelectric conversion element is substantially equal to a height of the primary conductor An exposed portion formed by the aforementioned step of the support portion. 如請求項1或2之電流感測器，其中於前述支撐部設置有階差，且前述階差的大小係將前述磁電轉換元件的厚度設為t1、前述1次導體的厚度設為t2時的大於0而小於2×t1+t2之值，前述階差係使前述磁電轉換元件的感磁面之高度降低之方向的階差。 The current sensor of claim 1 or 2, wherein a step is provided in the support portion, and the magnitude of the step is such that the thickness of the magnetoelectric conversion element is t1 and the thickness of the first-order conductor is t2. The value is greater than 0 and less than 2 × t1 + t2, and the step is a step in which the height of the magnetic sensitive surface of the magnetoelectric conversion element is lowered. 一種電流感測器用基板，其特徵為包含：一次導體，其包含供被測定電流流動之U字形之電流 路徑；支撐部，其配置於前述U字形之開口部且支撐磁電轉換元件；及連接於前述支撐部之引線端子；前述支撐部包含：配置於前述U字形之前述開口部的第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部的第2支撐部；且前述支撐部不與前述U字形之電流路徑電性連接。 A substrate for a current sensor, comprising: a primary conductor including a U-shaped current for a current to be measured to flow a support portion disposed in the U-shaped opening and supporting the magnetoelectric conversion element; and a lead terminal connected to the support portion; the support portion including: a first support portion disposed in the U-shaped opening; And a second support portion that is not disposed adjacent to the first support portion and that is not disposed in the opening portion; and the support portion is not electrically connected to the U-shaped current path.
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