JP4164625B2

JP4164625B2 - CURRENT DETECTOR HAVING HALL ELEMENT

Info

Publication number: JP4164625B2
Application number: JP2001182247A
Authority: JP
Inventors: 博一後藤; 晃長谷川; 康二大塚; 隆志加藤
Original assignee: Sanken Electric Co Ltd
Current assignee: Sanken Electric Co Ltd
Priority date: 2001-06-15
Filing date: 2001-06-15
Publication date: 2008-10-15
Anticipated expiration: 2021-06-15
Also published as: JP2003004773A

Description

【０００１】
【発明の属する分野】
本発明は、電気回路の電流を検出又は測定するためのホ−ル素子を備えた電流検出又は測定装置に関する。
【０００２】
【従来の技術】
ホ−ル素子は、ここに印加される磁界に正比例した電圧即ちホ−ル電圧を発生する。従って、ホ−ル素子を電流通路に沿って配置すると、電流通路を流れる電流に比例して発生する磁界がホ−ル素子に作用し、ホ−ル素子から電流に比例した電圧を得ることができる。電流通路の電流の検出感度を高めるためには、電流通路をホ−ル素子に出来る限り接近させた方が良い。この目的のために、本件出願人は特開2000-174357号において、ホ−ル素子を含む半導体基体の上面に絶縁膜を介して被検出電流が流れる導体層を設けた電流検出装置を提案した。
【０００３】
【発明が解決しようとする課題】
ところで、ホール素子と電流通路形成用導体とを同一の樹脂封止体でモールドすると、ホール素子と電流通路形成用導体のいずれか一方が不良であっても、全体が不良になり、結果として電流検出装置がコスト高になる。また、従来の電流検出装置では十分な電流検出感度を得ることができなかった。また、従来の電流検出装置では外来ノイズを十分に防止することができなかった。また、例えば100〜６００Ａのような大電流を容易に検出することができる電流検出装置が要求されている。
【０００４】
そこで、本発明の第１の目的は、コストの低減が可能な電流検出装置を提供することにある。本発明の第２の目的は感度の高い電流検出装置を提供することにある。本発明の第３の目的は外来ノイズを防ぐことができる電流検出装置を提供することにある。本発明の第４の目的は、コストの低減が可能であり且つ高い信頼性を有して大電流を検出することが可能な電流検出装置を提供することにある。
【０００５】
【課題を解決するための手段】
上記課題を解決し、上記目的を達成するための本発明は、電気回路の電流を検出又は測定するための装置であって、前記電気回路の電流を流すための電流通路形成用導体、及び前記電流通路形成用導体の一部を被覆しており且つ後記第２の部品を位置決めするための位置決め部分を有している第１の絶縁性被覆体から成る第１の部品と、ホール素子、前記ホール素子を外部回路に接続するための複数のリード端子、及び前記ホール素子と前記複数のリード端子の一部とを被覆している第２の絶縁性被覆体から成り、且つ前記電流通路形成用導体を流れる電流の基づいて発生する磁界が前記ホール素子に作用するように前記第１の部品の前記位置決め部分に対して位置決めされている第２の部品と、前記第１の部品に前記第２の部品を固着している接着層とを備え、前記電流通路形成用導体は平面的に見て前記第１及び第２の絶縁性被覆体から成る包囲体から導出された導出部を有し、前記複数のリ−ド端子は平面的に見て前記包囲体から導出された導出部を有し、平面的に見て、前記電流通路形成用導体の前記導出部が前記複数のリ−ド端子の前記導出部に重ならないように配置されていることを特徴とする電流検出装置に係わるものである。
なお、本願発明における、"前記ホール素子を外部回路に接続するための複数のリード端子”は、ホール素子に直接的に接続されるリード端子のみでなく、ホール素子に対して増幅器又は制御電流供給回路等の付加回路を介して間接的に接続されるリード端子も意味する。また、本発明において、電流の検出とは、電流の有無の検出又は電流量の検出即ち測定を意味する。
【０００６】
なお、請求項２に示すように、前記電流通路形成用導体は平面的に見て前記第１及び第２の絶縁性被覆体から成る包囲体から導出された導出部を有し、前記複数のリ−ド端子は平面的に見て前記包囲体から導出された導出部を有し、平面的に見て、前記電流通路形成用導体の前記導出部が前記複数のリ−ド端子の前記導出部に重ならないように配置されていることが望ましい。
また、請求項３に示すように電流形成用導体を第１及び第２の電流通路形成用導体の組み合せで構成することができる。
【０００７】
【発明の効果】
請求項１及び２の発明によれば次の効果が得られる。
（１）ホール素子を絶縁性被覆体で被覆した第１の部品と電流通路形成用導体を絶縁性被覆体で被覆した第２の部品とを組み合せて電流検出装置を構成するので、良品の第１及び第２の部品を組み合せることができ、完成品の不良の発生が少なくなり，結果としてコストの低減を図ることができる。
（２）第２の部品に第１の部品の位置決め部分を設けるので、両者の位置関係を正確に保つことができ、電流検出精度を高めることができる。
（３）電流通路形成用導体の導出部と複数のリ−ド端子の導出部とが平面的に見て重ならないように配置されているので、上記２つの導出部相互間の沿面距離を大きくすることが可能になり、比較的大きな電流を高い信頼性を有して検出することが可能になる。
また、請求項３の発明によれば、漏れ電流の検出又は電流バランスの検出を容易に行うことが可能になる。
【０００８】
【実施形態】
次に、図１〜図２２を参照して本発明の実施形態を説明する。
【０００９】
【第１の実施形態】
図１〜図１４に示す第１の実施形態の電流検出装置は、図５に示す第１の部品１と第２の部品２とを図１〜図３に示すように接着層３で相互に結合したものから成り、例えば電気自動車における電流検出に使用することができるものである。
【００１０】
第１の部品１は、被測定電流即ち被検出電流を流すための電流通路形成用導体４と、第１の絶縁性被覆体としての第１の樹脂成形体５とから成る。
【００１１】
電流通路形成用導体４は、例えば１００〜６００Ａ程度の電流を流すことができる比較的厚い銅板にニッケルメッキ層を設けた金属板をプレス加工したものであり、平面的に見て図８に示すように全体としてＵ字状に形成され、溝６を介して並置された第１及び第２の部分７、８と、第１及び第２の部分７、８の一方の端を相互に連結するように配置された第３の部分９とを有している。帯状に延びている第１及び第２の部分７、８は、図８で破線で区画して示すように第１及び第２の端子部分７ａ、８ａと、第１及び第２の電流通路形成部分７ｂ、８ｂとを有する。第１及び第２の端子部分７ａ、8ａには、この導体４を電気回路に直列に接続するための貫通孔１０ａ、１０ｂが設けられている。従って、第１及び第２の端子部分７ａ、８ａは電気回路導体（図示せず）に対してビスで固定される。導体４の第１及び第２の電流通路形成部分７ｂ、８ｂには、この外周縁から内側に向うように切り込み溝１１ａ、１１ｂ、１１ｃ、１１ｄが形成されている。また、第３の電流通路形成部分として働く第３の部分９にも溝１１ｅ、１１ｆが形成されている。この溝１１ａ〜１１ｅは電流通路を溝６寄りに狭める働き、及び樹脂成形体５との噛み合いを強めて結合強度を向上させる働きを有する。
【００１２】
第１の樹脂成形体５は、導体４の機械的安定性の向上及び電気的絶縁性の向上及び第２の部品２の位置決め及び保護のためのものであって、対の端子部分７ａ、８ａと第１及び第２の電流通路形成部分７ｂ、８ｂ及び第３の部分９の一方の主面の一部を露出させ、これ以外の部分を被覆するように形成されている。更に詳細には、図２及び図３から最も明らかなように、第１の樹脂成形体５は、第１及び第２の電流通路形成部分７ｂ、８ｂと第３の部分９の下面側の全体を覆い、且つこれ等の上面側の一部を覆い、且つ第１及び第２の電流通路形成部分７ｂ、８ｂの相互間及び溝１１ａ〜１１ｆに充填されている。第１の樹脂成形体５は、図１〜図６から明らかなように、第２の部品２を第１の部品１に位置決めするための第１及び第２の位置決め部分５ａ、５ｂを有する。この第１及び第２の位置決め部分５ａ、５ｂの詳細は追って説明する。なお、第１の樹脂成形体５の導体４の下面側部分の厚みは放熱性を良くするために導体４の上面側部分の厚みよりも薄く形成されている。第１の樹脂成形体５は周知のトランスファモールド法又はインジェクションによって一体に形成することができる。
【００１３】
第２の部品２はホールＩＣ即ちホール素子を含む半導体装置であって、
図７から明らかなようにホール素子を含む半導体チップ２０と、金属製支持板２１と、この支持板２１に連結された外部リード端子２２と、支持板２１に連結されていない外部リード端子２３、２４、２５と、内部接続ワイヤ２６、２７、２８、２９と、第２の絶縁性被覆体としての第２の樹脂成形体３０とから成る。
【００１４】
半導体チップ２０は金属支持板２１に固着されている。例えばＡｌ線から成る内部接続ワイヤ２６、２７、２８、２９は、半導体チップ２０と支持板２１及び外部リード端子２３、２４、２５との間を電気的に接続している。第２の樹脂成形体３０は半導体チップ２０、支持板２１、外部リード端子２２、２３、２４、２５の一部、内部接続ワイヤ２６、２７、２８、２９を覆うように周知のトランスファモールド法又はインジェクションモールド法によって形成されている。このホールＩＣ側の第２の樹脂成形体３０は、図５に示すように電流通路形成体としての第１の部品１の導体４の平坦な露出主面３１上に配置される主面３２と、第１の樹脂成形体５の第１の位置決め部分５ａを形成する凹部の１つの壁面３３に対向させる側面３４とを有する。第２の部品２の第２の樹脂成形体３０は、平面的に見て第１の部品１の第１の樹脂成形体５に形成された凹状の第１の位置決め部分５ａに収容させることができるパターンに形成されている。第１及び第２の部品１，２の組立て時に、第１の部品１側の導体４の主面３１と第２の部品２側の主面３２との間及び第１の部品１側の壁面３３と第２の部品２側の側面３４とが図２に示すように接着層３によって互いに固着される。従って、電流検出装置の組立が終了した後には、第１及び第２の部品１、２が一体化され、実質的に単一の電気部品となる。
ホール素子３５を含む半導体チップ２０に接続された４本の外部リード端子２２，２３，２４，２５は互いに平行になるように第２の樹脂成形体３０から導出されている。これ等の外部リード端子２２，２３，２４，２５の一部は、図４から最も明らかなように第１の樹脂成形体５に溝状に形成された４つの第２の位置決め部分５ｂに挿入され、相互間の短絡及びこれ等の変形が防止されている。外部リード端子２２〜２５の先端側部分は半導体チップ２０を外部回路に接続するために第１の樹脂成形体５の外側に導出されている。更に，第１及び第２の部品１，２の一体化を強めるために、第１及び第２の部品１，２が接着層３で一体化された後に、第１の位置決め部分５ａと第２の位置決め部分５ｂとに生じた第１及び第２部品１，２間の隙間に絶縁性樹脂が注入されて固化され、図１３及び図１４に示す樹脂層９０が形成されている。
接着層３で一体化された第１の部品１の第１の樹脂成形体５と第２の部品２の第２の樹脂成形体３０との組み合せから成る絶縁性包囲体１００は、図１のように平面的に見て四角形に形成されている。平面的に見て、電流通路形成用導体４の上記包囲体１００又は第１及び第２の樹脂成形体５、３０からの外側への導出部は、複数の外部リ−ド端子２２〜２５の上記包囲体１００又は第１及び第２の樹脂形成態５、３０からの外側への導出部に重ならないように配置されている。更に詳細には、第１及び第２の樹脂成形体５、３０の組み合せから成る包囲体１００は、互いに対向する第１及び第２の主面１０１、１０２と第１、第２、第３及び第４の側面１０３、１０４、１０５、１０６とを有する６面体即ち直方体である。電流通路形成用導体４の導出部は、第３の側面１０５から導出され、外部リ−ド端子２２〜２５の上記導出部は第３の側面１０５とは異なる第１の側面１０３から導出されている。
【００１５】
半導体チップ２０は、図１０に概略的に示す底面図から明らかなように周知のホール素子３５と、増幅器３６と、制御電流供給回路３７と、第１、第２、第３及び第４の端子３８、３９、４０、４１とを有し、平面的に見て四角形に形成されている。
【００１６】
ホール素子３５、増幅器３６及び制御電流供給回路３７は化合物半導体（例えばガリウム砒素）から成る同一の半導体基板４２の中に周知の方法で形成されている。半導体チップ２０の形成方法及び構成は周知であるので、図１１及び図１２には本発明に係わる電流通路形成用の第１の部品１と直接に関係するホール素子３５のみが示され、増幅器３６及び制御電流供給回路３７の図示は省略されている。
【００１７】
平面的に見て四角形の半導体基板４２の中には、ホール素子３５を形成するためにｎ型の第１、第２、第３、第４及び第５の半導体領域４３、４４、４５、４６、４７と、ｐ型の第６、第７及び第８の半導体領域４８、４９、５０が形成されている。ｎ型の第５の半導体領域４７は半導体基体４２の大部分を占めるｐ型の第８の半導体領域５０の中に島状に形成され、図１１に示すように平面的に見て十字状のパターンを有する。ｎ型の第１及び第２の半導体領域４３、４４はｎ型の第５の半導体領域４７の不純物濃度よりも高い不純物濃度を有するｎ+ 型半導体領域であって、図１１に示すようにＹ軸方向において互いに離間して対向配置され且つ第５の半導体領域４７の中に島状に形成されている。この第１及び第２の半導体領域４３、４４には図１０に示すように第１及び第２の電極５１、５２がオーミック接触している。第１及び第２の電極５１、５２は制御電流供給回路３７に接続されているので、第５の半導体領域４７に第１の半導体領域４３から第２の半導体領域４４に向って周知の制御電流Ｉc が流れる。従って、第１及び第２の半導体領域４３、４４を制御電流供給用半導体領域と呼ぶこともできる。なお、第１及び第２の電極５１、５２は周知の制御電流供給回路３７を介して直流電源接続用の第３及び第４の端子４０、４１に接続されている。
【００１８】
ｎ型の第３及び第４の半導体領域４５、４６は、ｎ型の第５の半導体領域４７の不純物濃度よりも高い不純物濃度を有するｎ+ 型半導体領域であって、第５の半導体領域４７のＹ軸方向の中央部分の両端の近くに配置されている。この第３及び第４の半導体領域４５、４６の一部は第５の半導体領域４７に隣接し、残部はｐ型半導体から成る第６及び第７の半導体領域４８、４９に隣接している。Ｘ軸方向において互いに対向している第３及び第４の半導体領域４５、４６には図１０及び図１２に示すように第３及び第４の電極５３、５４がオーミック接触している。従って、第３及び第４の半導体領域４５、４６をホール電圧検出用半導体領域と呼ぶこともできる。ｐ型の第６及び第７の半導体領域４８、４９はｎ+ 型の第３及び第４の半導体領域４５、４６の第５の半導体領域４７に対する接触面積を制限するものである。
【００１９】
第１及び第２の半導体領域４３、４４間に制御電流Ｉc が流れ、この制御電流Ｉc に対して直交するように磁界を印加すると、第３及び第４の半導体領域４５、４６間に周知のホール効果の原理に従って磁束密度に比例したホール電圧が得られる。従って、ホール素子３５のホール電圧を発生させるための主動作領域は、第５の半導体領域４７における第１及び第２の半導体領域４３、４４の相互間及び第３及び第４の半導体領域４５、４６の相互間である。しかし、概略的には第５の半導体領域４７の全体をホール素子の主動作領域と呼ぶことができる。
ホール電圧検出用の第３及び第４の電極５３、５４は、図９に示すように周知の増幅器３６を介して第１及び第２の端子３８、３９に接続されている。
【００２０】
半導体基板４２の一方の主面には例えばシリコン酸化膜から成る絶縁膜５５が設けられ、他方の主面には例えばアルミニウムから成る金属層５６が設けられている。絶縁膜５５は多層配線構造とするために第１及び第２の絶縁膜５５ａ、５５ｂの積層体から成る。第１及び第２の電極５１、５２は第１及び第２の絶縁膜５５ａ、５５ｂの開口を介して第１及び第２の半導体領域４３、４４に接続され、第３及び第４の電極５３、５４は第１の絶縁膜５５ａの開口を介して第３及び第４の半導体領域４５、４６に接続されている。半導体基板４２の他方の主面の金属層５６は導電性又は絶縁性の接合材５７によって支持板２１に固着されている。
【００２１】
支持板２１は、図９から明らかなように、この主面に垂直な方向から見て即ち平面的に見て全体的に四角形のパターンに形成されており、半導体チップ２０よりも大きな面積を有する。支持板２１と第１〜第４の外部リード端子２２〜２５とはリードフレームに基づいて形成されており、互いに同一厚み且つ同一の材料の例えば銅板にニッケルメッキした金属板から成る。支持板２１及びリード端子２２〜２５は、電流通路形成用導体４よりも薄く形成されている。支持板２１はワイヤ２６によって半導体チップ２０の第１の端子３８に接続されている。この支持板２１に連結された外部リード端子２２は一般にはグランドに接続される。半導体チップ２０の第２、第３及び第４の端子３９、４０、４１は、ワイヤ２７、２８、２９によって外部リード端子２３、２４、２５に接続されている。
【００２２】
支持板２１に固着された半導体チップ２０のホール素子３５は、図１から明らかなように平面的に見てその大部分が電流通路形成用導体４の溝６の内側になるように配置されている。更に詳細には、図１及び図５で破線で示すように少なくともホール素子３５の主動作領域が平面的に見て溝６の内側になるように半導体チップ２０が配置されている。
【００２３】
図１の電流検出装置によって電流を検出する時には、被検出電流が流れている電気回路に導体４の第１及び第２の端子部７ａ、７ｂを接続し、Ｕ字状電流通路を形成する導体４に電流を流す。電流通路形成用導体４は平面的に見てホール素子３５の主動作領域となる第５の半導体領域４７の３方向に近接しているので、電流通路形成用導体４に電流が流れると、アンペアの右ネジの法則に従って図１２で破線で示す向きの磁界Ｈが発生し、３方向からホ−ル素子３５に磁界即ち磁束が作用する。この磁界Ｈの向きは第５の半導体領域４７の制御電流Ｉc の向きに垂直であるので、第３及び第４の半導体領域４５、４６間即ち第３及び第４の電極５３、５４間にホール電圧が発生する。このホール電圧は磁界Ｈに比例し、磁界Ｈは被検出電流に比例するので、ホール電圧によって被検出電流を検出することができる。
【００２４】
本実施形態の電流検出装置は次の効果を有する。
（１）電流通路形成体としての第１の部品１とホール装置としての第２の部分２とを別の工程で独立に形成し、その後に組立てるので，それぞれの良品のみを組み合せることができる。これにより、電流検出装置の製造歩留りの向上及びコストの低減が達成される。
（２）第１の部品１に位置決め部分５ａ、５ｂを設け、ここに第２の部品２を位置決めするので、電流通路形成用導体４に対するホール素子３５の位置決めを正確に行うことができ、電流検出のバラツキを防ぐことができる。
（３）外部リード端子２２〜２５の位置決め部分５ｂを設けたので、これ等の相互間の短絡及びこれ等の変形を防ぐことができる。
（４）ホール素子３５と一体的に電流通路形成用導体４を設けたので、ホール素子３５に接近させて例えば１００〜６００Ａのような大電流を流すことが可能になり、且つ両者の位置関係を予め高精度に設定することができ、大電流の検出を高精度に行うことができる。
（５）導体４の溝６によってＵ字状の電流通路が形成されており、平面的に見てこのＵ字状電流通路の中にホール素子３５の主動作領域となる第５の半導体領域４７が配置されているので、第５の半導体領域４７に対して磁束が３方向から作用し、ここに作用する磁束の数が多くなり、電流の検出感度が高くなる。
（６）導体４に補助溝１１ａ〜１１ｅを設けて電流通路を狭めているので、放熱性及び機械的強度を向上させるために導体４を比較的幅広に形成したにも拘らず、電流を集中的に流すことができ、ホール素子３５に対して有効に作用する磁束を増大させることができる。
（７）支持板２１と電流通路形成用導体４との間に半導体チップ２０が配置されているので、支持板２１が半導体チップ２０のシールド層として機能し、外部からの不要電界ノイズを低減することができる。
（８）ホール素子３５を含む第２の部品２と大電流が流れる電流通路形成用の第１の部品１とを重ねるように組み合せるので、電流検出装置の小型化が達成される。
（９）第１及び第２の部品１，２を独立に形成するので、導体４の厚みに拘束されずに支持板２１及び外部リード端子２２〜２５を電流通路形成用導体４よりも薄くすることが可能になり、ホールＩＣ即ち第２の部品２を低コスト且つ容易に形成することができる。
（１０）電流通路形成用導体４とホ−ル素子３５とが一体化されているので、電気回路に対する接続及び配置が容易になる。
（１１）電流通路形成用導体４は絶縁性包囲体１００の第３の側面１０５から導出され、外側リ−ド端子２２〜２５は第３の側面１０５と反対側の第１の側面１０３から導出され、且つ平面的に見て２つの導出部は重ならないので電流通路形成用導体４と外部リ−ド端子２２〜２５との沿面距離を大きくすることができる。この結果、電流検出装置の信頼性を向上させることができる。また、比較的大きな電流を流すことができる電流通路形成用導体４の外部回路への接続を外部リ−ド端子２２〜２５に妨害されずに容易且つ確実に行うことができる。
【００２５】
【第２の実施形態】
次に、図１５〜図２０を参照して第２の実施形態の電流検出装置を説明する。但し、図１５〜図２０において図１〜図１４と共通する部分には同一の符号、又はダッシュ又は添字ａ、ｂを伴なった同一の符号を付してその説明を省略する。また、図１５〜図２０の説明において、図１〜図１４も参照する。
【００２６】
図１５〜図２０に示す第２の実施形態の電流検出装置は、図１５に示す第１の部品１’と図１６に示す第２の部品２’とを図１９に説明的に示す接着層３’で一体化したものである。図１５の第１の部品１’は第１の実施形態の図６の第１の部品１と同様に電流通路形成用導体４ａと第１の樹脂成形体５’とを有し、第１の樹脂成形体５’は第１及び第２の位置決め部分５ａ’、５ｂ’を有する。第２の部品２’は図１６に示すように第１及び第２のホール素子３５，３５’を有し、且つ第２の樹脂成形体３０’、外部リード端子２２’〜２５’を有する。第１及び第２のホール素子３５，３５’は第１及び第２の電流検出部であって、これらの組み合せによってホール効果装置が構成されている。なお、第１及び第２のホール素子３５、３５’は図１９に示すように同一の半導体基板４２ａに形成されている。この第１及び第２のホ−ル素子３５、３５’は同一構造であるので、互いに共通する部分には同一の符号を付し、第２のホール素子３５’の各部の符号にダッシュを付して両者を区別する。
【００２７】
図１７に示す電流通路形成用導体４ａは、第１及び第２のホール素子３５、３５′の主動作領域である第５の半導体領域４７、４７′に隣接するＳ字状電流通路形成するために、第１及び第２の溝６，６′と複数の補助溝１１ａ’、１１ｂ’とを有する。第１及び第２の溝６，６’は互いに逆の方向から切り込まれている。電流通路形成用導体４ａの第１及び第２の端子部分７ａ’、８ａ’は、図８の第１及び第２の端子部分７ａ、７ｂと同様に被検出電流が流れる電気回路に接続される。第１及び第２のホール素子３５、３５´の主動作領域としての第５の半導体領域４７，４７´は平面的に見て第１及び第２の溝６，６´の内側に配置されている。
第１及び第２のホール素子３５，３５´を含む半導体チップ２０´は図１７に示すように金属支持板２１に固着されている。第２の部品２´は第１の部品１´に対して第１及び第２の位置決め部分５ａ´、５ｂ´を使用して位置決めされ、接着層３´で固着される。第2の樹脂成形体３０´を伴って包囲体を構成する第１の樹脂成形体５´は、図１の第１の樹脂成形体５と同様に６面体であって、第１及び第２の主面１０１、１０２、第１、第２、第３及び第４の側面１０３、１０４、１０５、１０６を有している。電流通路形成用導体４ａの第１の端子部７a´から成る一方の導出部は、第３の側面１０５から導出され、第２の端子部８ａ´からなる他方の導出部は第１の側面１０３から導出されている。図１６に示す複数の外部リ−ド端子２２´〜２５´は図１５の位置決め部分５ｂ´に配置されて第１の側面１０３から導出される。第１の側面１０３からは端子部８ａ´と外部リ−ド端子２２´〜２５´との両方が導出されるが、平面的に見て両者は重ならない。
【００２８】
電流通路形成用導体４ａに流れる電流に基づいて生じる磁界Ｈの向きは第１及び第２のホール素子３５、３５′に対して図１９で破線で示すように互いに逆になる。第１及び第２のホール素子３５、３５′に周知の制御電流Ｉc を流すために第１のホール素子３５の第１及び第２の電極５１、５２と第２のホール素子３５′の第１及び第２の電極５１′、５２′とが図２０の周知の制御電流供給回路３７ａに接続されている。第１及び第２のホール素子３５、３５′の出力電圧を合成して被検出電流に対応する電圧を得るための出力回路３６ａは、第１、第２及び第３の差動増幅器７１、７２、７３から成る。第１の差動増幅器７１の正入力端子は第１のホール素子３５の第３の電極５３に接続され、この負入力端子は第１のホール素子３５の第４の電極５４に接続されている。第２の差動増幅器７２の正入力端子は第２のホール素子３５′の第３の電極５３′に接続され、この負入力端子は第２のホール素子３５′の第４の電極５４′に接続されている。従って、第１の差動増幅器７１から得られる第１のホール電圧Ｖh1と第２の差動増幅器７２から得られる第２のホール電圧−Ｖh2は互いに逆の極性を有する。第３の差動増幅器７３の正入力端子は第１の差動増幅器７１に接続され、この負入力端子は第２の差動増幅器７２に接続されている。従って、第３の差動増幅器７３からはＶh1−（−Ｖh2）＝Ｖh1＋Ｖh2の出力が得られる。即ち、演算手段としての第３の差動増幅器７３からは、第１の差動増幅器７１の出力Ｖh1の絶対値と第２の差動増幅器７２の出力−Ｖh2の絶対値との和が得られる。
なお、第２の差動増幅器７２の出力段に反転回路を設け、第３の差動増幅器７３の代りに加算器を設けることによってＶh1＋Ｖh2を示す出力を得ることもできる。
【００２９】
第１及び第２のホール素子３５、３５′は、図１９に示すように共通の半導体基体４２ａに形成されている。勿論、第１及び第２のホール素子３５、３５′を個別の半導体基体に形成することもできる。
【００３０】
第２の実施形態は第１の実施形態の（１）〜（１０）と同一の効果を有する他に次の効果も有する。
（１）電流検出信号として、第１及び第２の電流検出部即ち第１及び第２のホール素子３５、３５′の出力の絶対値の加算値が得られるので、電流検出感度が大きくなる。
（２）電流通路形成用導体４ａの中間部分を第１及び第２のホール素子３５、３５′で共用しているので、スペースの増大が抑えられている。
（３）第１及び第２のホール素子３５、３５′を並置し、この合成出力を得る構成であり、且つ第１及び第２のホール素子３５、３５′に対する磁界Ｈの方向が逆になるので、不要な外部磁界（ノイズ）が第１及び第２のホール素子３５、３５′に加わった場合にこれ等の相殺が生じ、外部磁界の影響の少ない電流検出を行うことができる。即ち不要外部磁界に基づくホール電圧をＶ0 とすると、第１の差動増幅器７１の出力はＶh1＋Ｖ0 、第２の差動増幅器７２の出力は−Ｖh2＋Ｖ0 となり、第３の差動増幅器７３の出力はＶh1＋Ｖ0 −（−Ｖh2＋Ｖ0 ）＝Ｖh1＋Ｖh2となり、不要外部磁界の影響の少ない出力を得ることができ、電流Ｉs の検出精度が向上する。
【００３１】
【第３の実施形態】
次に、図２１を参照して第３の実施形態の電流検出装置を説明する。但し、図２１において図１と実質的に同一の部分には同一の符号を付してその説明を省略する。図２１の電流検出装置は、図１の第１の部品１を変形した第１の部品１ａを設け、この他は図１と同一に形成したものである。図２１の第１の部品１ａは、図１の電流通路形成用導体４を少し変形した電流通路形成用導体４ｂを設け、この他は、図１と実質的に同一に形成したものである。即ち、図２１では、電流通路形成用導体４ｂの第１及び第２の端子部分７ａ、８ａが図１に比べて左側及び右側に延びている。また、電流通路形成用導体４ｂの第１及び第２の端子部分７ａ、８ａの間のＵ字状溝６を含む部分が第１の樹脂形成体５で被覆されている。従って、電流通路形成用導体４ｂの第１の端子部分７ａを含む一方の導出部が包囲体１００即ち第１の樹脂成形体５の第２の側面１０４から導出され、第２の端子部分８ａを含む他方の導出部が包囲体１００即ち第１の樹脂成形体５の第４の側面１０６から導出されている。第２の部品２の外部リ−ド端子２２〜２５は図１と同様に包囲体１００の第１の側面１０３から導出されている。この結果、平面的に見て電流通路形成用導体４の導出部と外部リ−ド端子２２〜２５の導出部との重なり合いが生じていない。
【００３２】
図２１の第３の実施形態は、図１の第１の実施形態と同一の効果（１）〜（１１）を有する他に、次の効果も有する。
（１）第１の端子部分７ａと第２の端子部分８ａとが互いに離間しているので、外部回路に対する第１及び第２の端子部分７ａ、８ａの取付け作業が容易になる。
（２）第１及び第２の端子部分７ａ、８ａの間が第１の樹脂成形体５で被覆されているので、第１及び第２の端子部分７ａ、８ａの短絡を防止することができる。
【００３３】
【第４の実施形態】
図２２に示す第４の実施形態の変形された電流通路形成用導体４ｃは、図８の溝６と同様に機能するＪ字状溝６ａを有する。図２２においては、平面的に見て点線で示すようにホール素子３５がＪ字状溝６ａで囲まれた部分８０に配置される。Ｊ字状溝６ａに囲まれた部分８０は電界又は電磁シールドとして機能し、且つ放熱体としても機能する。図２２の電流通路形成用導体４ｃを使用した電流検出装置は、第１の実施形態と同一の効果を有する他に、シールド性向上及び放熱性向上の効果を有する。
【００３４】
【第５の実施形態】
図２３は、第５の実施形態の電流検出装置を図１の第１の実施形態の電流検出装置と同様に示すものである。図２３の電流検出装置は、図１の第２の部品２を少し変形した第２の部品２ａを設け、この他は図３と同一に形成したものである。
【００３５】
図２３の第２の部品２ａは、ホール素子を含む半導体チップ２０の位置を変えた他は、第１の実施形態の第２の部品２と同一に形成されている。図２３では、ホール素子を含む半導体チップ２０が金属製支持板２１の上面即ち電流通路形成用導体４に対向していない主面上に配置されている。換言すれば、ホール素子を含む半導体チップ２０と電流通路形成用導体４との間に金属製支持板２１が配置されている。従って、図２３の金属製支持板２１は、半導体チップ２０の静電シールドとして機能する。第６の実施形態は第１の実施形態と同一の効果を有す。
【００３６】
【第６の実施形態】
図２４に示す第６の実施形態の電流検出装置は、第１の実施形態の第１の部品１及び第２の部品２を変形した第１の部品１ｂ及び第２の部品２ｂを設け、この他は第１の実施形態と同一に形成したものである。図２４の第１の部品１ｂは漏れ電流の検出に好適な構造とするために、第１の実施形態のＵ字状電流通路形成用導体４の代りに直線状に延びる第１及び第２の電流通路形成用導体１１１，１１２を設け、これらを第１の樹脂成形体１１３によって一体化し、この他は第１の実施形態の第１の部品１と実質的に同一に形成したものである。第１及び第２の電流通路形成用導体１１１、１１２は図１の溝６に相当する隙間６’を有して平行に配置され、ホール素子３５は平面的に見て隙間６’の中に配置されている。第１及び第２の電流通路形成用導体１１１、１１２を相互に又は外部回路に接続するために第１及び第２の端子部分７ａ、８ａの他に第３及び第４の端子部分７ｃ、８ｃが設けられ、これ等が第１の樹脂成形体１１３から突出している。第３及び第４の端子部分７ｃ、８ｃには接続用の貫通孔１０ｃ、１０ｄが形成されている。第１の樹脂成形体１１３は図１の第１の樹脂成形体５に相当するものであって図１の第１及び第２の位置決め部分５ａ、５ｂと同一の機能を有する第１及び第２の位置決め部分１１４，１１５を有している。図２４に示す第１及び第２の位置決め部分１１４，１１５に対する第２の部品２ｂの装着は第１の実施形態と同様になされ、第２の部品２ｂは図示されていない接着層によって第１の部品１ｂに第１の実施形態と同様に固着されている。
図２４の第２の部品２ｂは外部リード端子２２〜２５の導出方向を変えた他は第１の実施形態と同一に形成されている。即ち、図２４では平面的に見て第１の樹脂成形体１１３の第２の側面１０４‘から外部リード端子２２、２３が導出され、第４の側面１０４‘、１０６’から外部リード端子２４、２５が導出されている。第１及び第２の電流通路形成用導体１１１、１１２の第１及び第２の端子部分７ａ、８ａは第３の側面１０５’から導出され、第３及び第４の端子部分７ｃ、８ｃは第１の側面１０１’から導出されている。
【００３７】
図２４の電流検出装置を漏れ電流検出装置として使用する時には、第１の電流通路形成用導体１１１を対の電源ラインの一方即ち往路に直列に接続し、第２の電流通路形成用導体１１２を対の電源ラインの他方即ち復路に直列に接続する。また、第１及び第２の電流通路形成用導体１１１，１１２における電流Ｉａ、Ｉｂの流れる方向を図２４において矢印で示すように同一方向とする。電気回路において漏れ電流がなければ、往路の電流Ｉａと復路の電流Ｉｂとは同一である。ホール素子３５における電流Ｉａ、Ｉｂに基づく磁束の向きは互いに逆であるので、ＩａとＩｂとが等しい時にはホール電圧は発生しない。しかし、漏れ電流が有ると電流ＩａとＩｂとが不一致になるので、この差に対応した磁束がホール素子３５に作用し、漏れ電流に比例したホール電圧が発生する。
【００３８】
図２４の電流検出器は電流バランス検出器としても使用することができる。第１及び第２の被測定電流Ｉａ、Ｉｂを第１及び第２の電流通路形成用導体１１１，１１２に流すと、この差に比例したホール電圧が得られる。
なお、図２４の第３及び第４の端子部分７ｃ、８ｃを相互に接続し、第１の実施形態と同様にＵ字状電流通路を形成し、第１の実施形態と同様に使用することができる。
第６の実施形態の電流検出装置は、第１及び第２の位置決め部分１１４、１１５を有する第１の部品１ｂに第２の部品２ｂを配置する構成であるので、第１の実施形態と同一の効果も有する。
【００３９】
【変形例】
本発明は上述の実施形態に限定されるものでなく、例えば次の変形が可能なものである。
（１）図２３においてホール素子を含む半導体チップ２０の上方に磁性体から成る集磁板を配置することができる。
（２）半導体基体４２、４２ａをシリコン等の別の半導体で形成することができる。
【図面の簡単な説明】
【図１】第１の実施形態の付加樹脂層を設ける前の電流検出装置を示す平面図である。
【図２】図１の第１の実施形態の電流検出装置のＡ−Ａ線の一部を示す断面図である。
【図３】図１のＢ−Ｂ線を示す断面図である。
【図４】図１のＣ−Ｃ線を示す断面図である。
【図５】図１の電流検出装置を第１及び第２の部品に分解して図２と同様な断面で示す断面図である。
【図６】図１の第１の部品の平面図である。
【図７】図１の第２の部品を示す平面図である。
【図８】図６の第１の部品の電流通路形成用導体を示す断面図である。
【図９】図７の第２の部品を樹脂成形体を省いて示す平面図である。
【図１０】図９の半導体チップの底面図である。
【図１１】図１０の半導体基体のホール素子部分を示す平面図である。
【図１２】図１０のＤ−Ｄ線の一部を示す断面図である。
【図１３】付加樹脂層を設けた電流検出装置を図２と同様に示す断面図である。
【図１４】付加樹脂層を設けた電流検出装置を図３と同様に示す断面図である。
【図１５】第２の実施形態の電流検出装置の第１の部品を示す平面図である。
【図１６】第２の実施形態の第２の部品を示す平面図である。
【図１７】図１５の電流通路形成用導体を示す平面図である。
【図１８】第２の実施形態のＳ字状電流通路と第１及び第２のホール素子とを示す平面図である。
【図１９】第２の実施形態の電流検出装置の一部を図１８のＥ−Ｅ線に相当する部分で示す断面図である。
【図２０】第２の実施形態の電流検出装置を示す電気回路図である。
【図２１】第３の実施形態の電流検出装置を図１と同様に示す平面図である。
【図２２】第４の実施形態の電流通路形成用導体を示す平面図である。
【図２３】第５の実施形態の電流検出装置を図１４と同様に示す断面図である。
【図２４】第６の実施形態の電流検出装置を図１と同様に示す断面図である。
【符号の説明】
１、２第１及び第２の部品
３接着層
４電流通路形成用導体
５、３０樹脂成形体
５ａ、５ｂ位置決め部分
２０半導体チップ
２１支持板
２２〜２５外部リード端子
３５ホール素子[0001]
[Field of the Invention]
The present invention relates to a current detection or measurement device including a hall element for detecting or measuring a current of an electric circuit.
[0002]
[Prior art]
The Hall element generates a voltage that is directly proportional to the magnetic field applied thereto, that is, a Hall voltage. Accordingly, when the hole element is arranged along the current path, a magnetic field generated in proportion to the current flowing through the current path acts on the hole element, and a voltage proportional to the current can be obtained from the hole element. it can. In order to increase the current detection sensitivity of the current path, the current path should be as close as possible to the hall element. For this purpose, the present applicant proposed in JP-A-2000-174357 a current detection device in which a conductor layer through which a current to be detected flows is provided via an insulating film on the upper surface of a semiconductor substrate including a hole element. .
[0003]
[Problems to be solved by the invention]
By the way, if the Hall element and the current path forming conductor are molded with the same resin sealing body, even if either the Hall element or the current path forming conductor is defective, the whole becomes defective, and as a result, the current The detection device is expensive. In addition, conventional current detection devices cannot obtain sufficient current detection sensitivity. Further, the conventional current detection device cannot sufficiently prevent external noise. Further, there is a demand for a current detection device that can easily detect a large current such as 100 to 600A.
[0004]
Therefore, a first object of the present invention is to provide a current detection device capable of reducing the cost. A second object of the present invention is to provide a highly sensitive current detection device. A third object of the present invention is to provide a current detection device that can prevent external noise. A fourth object of the present invention is to provide a current detection device capable of reducing the cost and detecting a large current with high reliability.
[0005]
[Means for Solving the Problems]
The present invention for solving the above problems and achieving the above object is an apparatus for detecting or measuring a current of an electric circuit, the current path forming conductor for flowing the current of the electric circuit, and the above A first component comprising a first insulating coating covering a part of the current path forming conductor and having a positioning portion for positioning a second component to be described later; a Hall element; A plurality of lead terminals for connecting the Hall element to an external circuit, and a second insulating coating covering the Hall element and a part of the plurality of lead terminals, and for forming the current path A second component positioned with respect to the positioning portion of the first component such that a magnetic field generated based on a current flowing through the conductor acts on the Hall element; and the second component on the first component. The parts of And an adhesive layer that The Prepared, The current path forming conductor has a lead-out portion led out from an enclosure composed of the first and second insulating coverings when seen in a plan view, and the plurality of lead terminals are seen in a plan view. A lead-out portion led out from the enclosure, and arranged so that the lead-out portion of the current path forming conductor does not overlap the lead-out portions of the plurality of lead terminals in plan view; The present invention relates to a current detector characterized by the above.
In the present invention, “the plurality of lead terminals for connecting the Hall element to an external circuit” is not only a lead terminal directly connected to the Hall element, but also an amplifier or a control current supply to the Hall element. A lead terminal indirectly connected through an additional circuit such as a circuit is also meant. In the present invention, the detection of current means detection of presence or absence of current or detection of current amount, that is, measurement.
[0006]
As shown in claim 2 And said The current path forming conductor has a lead-out portion led out from the enclosure composed of the first and second insulating coverings when seen in a plan view, and the plurality of lead terminals are seen as seen in a plan view. It has a lead-out portion led out from the enclosure, and is arranged so that the lead-out portion of the current path forming conductor does not overlap the lead-out portions of the plurality of lead terminals in plan view. Is desirable.
Claims 3 As shown in FIG. 4, the current forming conductor can be constituted by a combination of the first and second current path forming conductors.
[0007]
【The invention's effect】
Claims 1 and 2 According to the invention, the following effects can be obtained.
(1) Since the current detection device is configured by combining the first part in which the Hall element is covered with the insulating covering and the second part in which the current path forming conductor is covered with the insulating covering, Since the first and second parts can be combined, the occurrence of defects in the finished product is reduced, and as a result, the cost can be reduced.
(2) Since the positioning part of the first part is provided in the second part, the positional relationship between the two parts can be accurately maintained, and the current detection accuracy can be increased.
(3) Since the lead-out portion of the current path forming conductor and the lead-out portions of the plurality of lead terminals are arranged so as not to overlap each other in plan view, the creepage distance between the two lead-out portions is increased. And a relatively large current can be detected with high reliability. .
Ma Claim 3 According to this invention, it becomes possible to easily detect leakage current or current balance.
[0008]
Embodiment
Next, an embodiment of the present invention will be described with reference to FIGS.
[0009]
[First Embodiment]
1 to 14, the current detection device of the first embodiment is configured such that the first component 1 and the second component 2 shown in FIG. 5 are mutually connected by an adhesive layer 3 as shown in FIGS. 1 to 3. For example, it can be used for current detection in an electric vehicle.
[0010]
The first component 1 includes a current path forming conductor 4 for flowing a current to be measured, that is, a current to be detected, and a first resin molded body 5 as a first insulating covering.
[0011]
The current path forming conductor 4 is obtained by pressing a metal plate in which a nickel plating layer is provided on a relatively thick copper plate capable of passing a current of about 100 to 600 A, for example, and is shown in FIG. The first and second portions 7 and 8 formed in a U-shape as a whole and juxtaposed via the groove 6 are connected to one end of the first and second portions 7 and 8. And a third portion 9 arranged in this manner. The first and second portions 7 and 8 extending in a band shape are formed with the first and second terminal portions 7a and 8a and the first and second current passages as shown in FIG. Portions 7b and 8b. The first and second terminal portions 7a and 8a are provided with through holes 10a and 10b for connecting the conductor 4 to the electric circuit in series. Accordingly, the first and second terminal portions 7a and 8a are fixed to the electric circuit conductor (not shown) with screws. In the first and second current path forming portions 7b and 8b of the conductor 4, cut grooves 11a, 11b, 11c, and 11d are formed so as to be directed inward from the outer peripheral edge. Grooves 11e and 11f are also formed in the third portion 9 that functions as a third current path forming portion. The grooves 11a to 11e have a function of narrowing the current path closer to the groove 6 and a function of strengthening the engagement with the resin molded body 5 to improve the bonding strength.
[0012]
The first resin molded body 5 is for improving the mechanical stability and electrical insulation of the conductor 4 and positioning and protecting the second component 2, and includes a pair of terminal portions 7 a and 8 a. The first and second current path forming portions 7b, 8b and the third portion 9 are formed so that a part of one main surface is exposed and the other portions are covered. More specifically, as is most apparent from FIGS. 2 and 3, the first resin molded body 5 includes the first and second current path forming portions 7 b and 8 b and the entire lower surface side of the third portion 9. And a part of the upper surface side thereof, and between the first and second current path forming portions 7b and 8b and in the grooves 11a to 11f. As is apparent from FIGS. 1 to 6, the first resin molded body 5 includes first and second positioning portions 5 a and 5 b for positioning the second component 2 on the first component 1. Details of the first and second positioning portions 5a and 5b will be described later. In addition, the thickness of the lower surface side portion of the conductor 4 of the first resin molded body 5 is formed thinner than the thickness of the upper surface side portion of the conductor 4 in order to improve heat dissipation. The first resin molded body 5 can be integrally formed by a well-known transfer molding method or injection.
[0013]
The second component 2 is a semiconductor device including a Hall IC, that is, a Hall element,
As apparent from FIG. 7, the semiconductor chip 20 including the Hall element, the metal support plate 21, the external lead terminal 22 connected to the support plate 21, the external lead terminal 23 not connected to the support plate 21, 24, 25, internal connection wires 26, 27, 28, 29, and a second resin molded body 30 as a second insulating covering.
[0014]
The semiconductor chip 20 is fixed to the metal support plate 21. For example, the internal connection wires 26, 27, 28, and 29 made of Al wire electrically connect the semiconductor chip 20 to the support plate 21 and the external lead terminals 23, 24, and 25. The second resin molded body 30 is formed by a well-known transfer mold method so as to cover the semiconductor chip 20, the support plate 21, a part of the external lead terminals 22, 23, 24, 25 and the internal connection wires 26, 27, 28, 29. It is formed by the injection mold method. The second resin molded body 30 on the Hall IC side has a main surface 32 disposed on the flat exposed main surface 31 of the conductor 4 of the first component 1 as a current path forming body as shown in FIG. And a side surface 34 opposed to one wall surface 33 of the concave portion forming the first positioning portion 5a of the first resin molded body 5. The second resin molded body 30 of the second component 2 can be accommodated in the concave first positioning portion 5a formed on the first resin molded body 5 of the first component 1 when viewed in plan. It is formed in a pattern that can. During assembly of the first and second parts 1 and 2, the gap between the main surface 31 of the conductor 4 on the first part 1 side and the main surface 32 on the second part 2 side and the wall surface on the first part 1 side 33 and the side surface 34 on the second component 2 side are fixed to each other by the adhesive layer 3 as shown in FIG. Therefore, after the assembly of the current detection device is completed, the first and second parts 1 and 2 are integrated into a substantially single electric part.
The four external lead terminals 22, 23, 24, 25 connected to the semiconductor chip 20 including the Hall element 35 are led out from the second resin molded body 30 so as to be parallel to each other. A part of these external lead terminals 22, 23, 24, 25 is inserted into four second positioning portions 5 b formed in a groove shape in the first resin molding 5 as is most apparent from FIG. 4. Thus, short circuit between them and deformation thereof are prevented. The tip side portions of the external lead terminals 22 to 25 are led out to the outside of the first resin molded body 5 in order to connect the semiconductor chip 20 to an external circuit. Further, in order to strengthen the integration of the first and second parts 1 and 2, after the first and second parts 1 and 2 are integrated with the adhesive layer 3, the first positioning portion 5 a and the second part 2 are integrated. Insulating resin is injected into a gap between the first and second parts 1 and 2 generated in the positioning portion 5b and solidified to form a resin layer 90 shown in FIGS.
An insulating enclosure 100 comprising a combination of the first resin molded body 5 of the first component 1 and the second resin molded body 30 of the second component 2 integrated by the adhesive layer 3 is shown in FIG. Thus, it is formed in a quadrangle when viewed in plan. In plan view, the lead-out portion of the current path forming conductor 4 from the surrounding body 100 or the first and second resin moldings 5 and 30 to the outside of the plurality of external lead terminals 22 to 25 It arrange | positions so that it may not overlap with the derivation | leading-out part to the outer side from the said enclosure 100 or the 1st and 2nd resin formation state 5,30. More specifically, the enclosure 100 composed of a combination of the first and second resin moldings 5 and 30 includes the first and second main surfaces 101 and 102 facing each other and the first, second, third and It is a hexahedron, that is, a rectangular parallelepiped having fourth side surfaces 103, 104, 105, and 106. The lead-out portion of the current path forming conductor 4 is led out from the third side surface 105, and the lead-out portions of the external lead terminals 22 to 25 are led out from the first side surface 103 different from the third side surface 105. Yes.
[0015]
As is apparent from the bottom view schematically shown in FIG. 10, the semiconductor chip 20 includes a well-known Hall element 35, an amplifier 36, a control current supply circuit 37, and first, second, third, and fourth terminals. 38, 39, 40, and 41, and is formed in a quadrangle when seen in a plan view.
[0016]
The Hall element 35, the amplifier 36, and the control current supply circuit 37 are formed by a well-known method in the same semiconductor substrate 42 made of a compound semiconductor (for example, gallium arsenide). Since the formation method and configuration of the semiconductor chip 20 are well known, only the Hall element 35 directly related to the first part 1 for forming a current path according to the present invention is shown in FIGS. The control current supply circuit 37 is not shown.
[0017]
An n-type first, second, third, fourth, and fifth semiconductor regions 43, 44, 45, 46 are formed in the rectangular semiconductor substrate 42 in plan view to form the Hall element 35. , 47 and p-type sixth, seventh and eighth semiconductor regions 48, 49, 50 are formed. The n-type fifth semiconductor region 47 is formed in an island shape in the p-type eighth semiconductor region 50 that occupies most of the semiconductor substrate 42, and has a cross shape when viewed in plan as shown in FIG. Has a pattern. The n-type first and second semiconductor regions 43 and 44 are n + -type semiconductor regions having an impurity concentration higher than that of the n-type fifth semiconductor region 47. As shown in FIG. In the axial direction, they are spaced apart from each other and are formed in an island shape in the fifth semiconductor region 47. As shown in FIG. 10, the first and second electrodes 51 and 52 are in ohmic contact with the first and second semiconductor regions 43 and 44, respectively. Since the first and second electrodes 51 and 52 are connected to the control current supply circuit 37, a well-known control current flows from the first semiconductor region 43 to the second semiconductor region 44 in the fifth semiconductor region 47. Ic flows. Therefore, the first and second semiconductor regions 43 and 44 can also be called control current supply semiconductor regions. The first and second electrodes 51 and 52 are connected to the third and fourth terminals 40 and 41 for DC power supply connection via a known control current supply circuit 37.
[0018]
The n-type third and fourth semiconductor regions 45 and 46 are n + -type semiconductor regions having an impurity concentration higher than that of the n-type fifth semiconductor region 47. Are arranged near both ends of the central portion in the Y-axis direction. A part of the third and fourth semiconductor regions 45 and 46 is adjacent to the fifth semiconductor region 47, and the remainder is adjacent to the sixth and seventh semiconductor regions 48 and 49 made of p-type semiconductor. As shown in FIGS. 10 and 12, the third and fourth electrodes 53 and 54 are in ohmic contact with the third and fourth semiconductor regions 45 and 46 facing each other in the X-axis direction. Therefore, the third and fourth semiconductor regions 45 and 46 can also be referred to as Hall voltage detection semiconductor regions. The p-type sixth and seventh semiconductor regions 48 and 49 limit the contact area of the n + -type third and fourth semiconductor regions 45 and 46 with the fifth semiconductor region 47.
[0019]
When a control current Ic flows between the first and second semiconductor regions 43 and 44 and a magnetic field is applied so as to be orthogonal to the control current Ic, a well-known between the third and fourth semiconductor regions 45 and 46 is known. A Hall voltage proportional to the magnetic flux density is obtained according to the Hall effect principle. Therefore, the main operation region for generating the Hall voltage of the Hall element 35 is between the first and second semiconductor regions 43, 44 in the fifth semiconductor region 47, and between the third and fourth semiconductor regions 45, 46 to each other. However, roughly, the entire fifth semiconductor region 47 can be called the main operation region of the Hall element.
The third and fourth electrodes 53 and 54 for detecting the Hall voltage are connected to the first and second terminals 38 and 39 via a known amplifier 36 as shown in FIG.
[0020]
An insulating film 55 made of, for example, a silicon oxide film is provided on one main surface of the semiconductor substrate 42, and a metal layer 56 made of, for example, aluminum is provided on the other main surface. The insulating film 55 is composed of a stacked body of first and second insulating films 55a and 55b to have a multilayer wiring structure. The first and second electrodes 51 and 52 are connected to the first and second semiconductor regions 43 and 44 through the openings of the first and second insulating films 55a and 55b, and the third and fourth electrodes 53 are connected. , 54 are connected to the third and fourth semiconductor regions 45, 46 through the opening of the first insulating film 55a. The metal layer 56 on the other main surface of the semiconductor substrate 42 is fixed to the support plate 21 with a conductive or insulating bonding material 57.
[0021]
As is clear from FIG. 9, the support plate 21 is formed in a generally rectangular pattern when viewed from a direction perpendicular to the main surface, that is, when viewed in plan, and has a larger area than the semiconductor chip 20. . The support plate 21 and the first to fourth external lead terminals 22 to 25 are formed based on a lead frame, and are made of a metal plate, for example, a nickel plate on a copper plate having the same thickness and the same material. The support plate 21 and the lead terminals 22 to 25 are formed thinner than the current path forming conductor 4. The support plate 21 is connected to the first terminal 38 of the semiconductor chip 20 by a wire 26. The external lead terminal 22 connected to the support plate 21 is generally connected to the ground. The second, third and fourth terminals 39, 40, 41 of the semiconductor chip 20 are connected to the external lead terminals 23, 24, 25 by wires 27, 28, 29.
[0022]
The Hall element 35 of the semiconductor chip 20 fixed to the support plate 21 is arranged so that most of the Hall element 35 is inside the groove 6 of the current path forming conductor 4 when seen in plan view, as is apparent from FIG. Yes. More specifically, the semiconductor chip 20 is arranged so that at least the main operation region of the Hall element 35 is located inside the groove 6 when viewed in plan, as indicated by a broken line in FIGS. 1 and 5.
[0023]
When a current is detected by the current detecting device of FIG. 1, the first and second terminal portions 7a and 7b of the conductor 4 are connected to the electric circuit through which the current to be detected flows to form a U-shaped current path. Current is passed through 4. Since the current path forming conductor 4 is close to the three directions of the fifth semiconductor region 47 that is the main operation region of the Hall element 35 in plan view, when current flows through the current path forming conductor 4, The magnetic field H in the direction indicated by the broken line in FIG. 12 is generated in accordance with the right-hand screw rule, and the magnetic field, that is, the magnetic flux acts on the hole element 35 from three directions. Since the direction of the magnetic field H is perpendicular to the direction of the control current Ic of the fifth semiconductor region 47, a hole is formed between the third and fourth semiconductor regions 45, 46, that is, between the third and fourth electrodes 53, 54. Voltage is generated. Since the Hall voltage is proportional to the magnetic field H and the magnetic field H is proportional to the detected current, the detected current can be detected by the Hall voltage.
[0024]
The current detection device of this embodiment has the following effects.
(1) Since the first part 1 as the current path forming body and the second part 2 as the hall device are independently formed in separate steps and then assembled, only the respective non-defective products can be combined. . As a result, an improvement in manufacturing yield of the current detection device and a reduction in cost are achieved.
(2) Since the positioning parts 5a and 5b are provided in the first component 1 and the second component 2 is positioned here, the Hall element 35 can be accurately positioned with respect to the current path forming conductor 4, and the current Variations in detection can be prevented.
(3) Since the positioning portions 5b of the external lead terminals 22 to 25 are provided, it is possible to prevent short circuit between them and deformation thereof.
(4) Since the current path forming conductor 4 is provided integrally with the Hall element 35, it is possible to flow a large current such as 100 to 600A close to the Hall element 35, and the positional relationship between the two. Can be set with high accuracy in advance, and a large current can be detected with high accuracy.
(5) A U-shaped current path is formed by the groove 6 of the conductor 4, and a fifth semiconductor region 47 to be a main operation region of the Hall element 35 in the U-shaped current path when seen in a plan view. Since the magnetic flux acts on the fifth semiconductor region 47 from three directions, the number of magnetic fluxes acting on the fifth semiconductor region 47 increases, and the current detection sensitivity increases.
(6) Since the auxiliary grooves 11a to 11e are provided in the conductor 4 to narrow the current path, the current is concentrated in spite of the fact that the conductor 4 is formed relatively wide in order to improve heat dissipation and mechanical strength. The magnetic flux that effectively acts on the Hall element 35 can be increased.
(7) Since the semiconductor chip 20 is disposed between the support plate 21 and the current path forming conductor 4, the support plate 21 functions as a shield layer of the semiconductor chip 20 and reduces unnecessary electric field noise from the outside. be able to.
(8) Since the second part 2 including the Hall element 35 and the first part 1 for forming a current path through which a large current flows are combined so as to overlap each other, the current detection device can be reduced in size.
(9) Since the first and second parts 1 and 2 are formed independently, the support plate 21 and the external lead terminals 22 to 25 are made thinner than the current path forming conductor 4 without being restricted by the thickness of the conductor 4. Therefore, the Hall IC, that is, the second component 2 can be easily formed at low cost.
(10) Since the current path forming conductor 4 and the hole element 35 are integrated, connection and arrangement with respect to the electric circuit are facilitated.
(11) The current path forming conductor 4 is led out from the third side surface 105 of the insulating enclosure 100, and the outer lead terminals 22 to 25 are led out from the first side surface 103 opposite to the third side surface 105. In addition, since the two lead-out portions do not overlap in plan view, the creeping distance between the current path forming conductor 4 and the external lead terminals 22 to 25 can be increased. As a result, the reliability of the current detection device can be improved. Further, the connection of the current path forming conductor 4 capable of flowing a relatively large current to the external circuit can be easily and reliably performed without being obstructed by the external lead terminals 22 to 25.
[0025]
[Second Embodiment]
Next, a current detection device according to a second embodiment will be described with reference to FIGS. However, in FIGS. 15-20, the same code | symbol or the same code | symbol accompanied by the dash or suffixes a and b is attached | subjected to the part which is common in FIGS. 1-14, and the description is abbreviate | omitted. In the description of FIGS. 15 to 20, FIGS. 1 to 14 are also referred to.
[0026]
The current detection device of the second embodiment shown in FIG. 15 to FIG. 20 is an adhesive layer in which the first component 1 ′ shown in FIG. 15 and the second component 2 ′ shown in FIG. 3 'integrated. The first component 1 ′ in FIG. 15 has a current path forming conductor 4a and a first resin molded body 5 ′ in the same manner as the first component 1 in FIG. 6 of the first embodiment. The resin molded body 5 ′ has first and second positioning portions 5a ′ and 5b ′. As shown in FIG. 16, the second component 2 ′ has first and second Hall elements 35 and 35 ′, and has a second resin molded body 30 ′ and external lead terminals 22 ′ to 25 ′. The first and second Hall elements 35 and 35 'are first and second current detection units, and a Hall effect device is configured by a combination thereof. The first and second Hall elements 35 and 35 'are formed on the same semiconductor substrate 42a as shown in FIG. Since the first and second hall elements 35 and 35 'have the same structure, the same reference numerals are given to the common parts, and the symbols of the respective parts of the second Hall element 35' are given dashes. To distinguish them.
[0027]
The current path forming conductor 4a shown in FIG. 17 forms an S-shaped current path adjacent to the fifth semiconductor regions 47 and 47 ′, which are the main operating regions of the first and second Hall elements 35 and 35 ′. The first and second grooves 6, 6 'and a plurality of auxiliary grooves 11a' and 11b 'are provided. The first and second grooves 6, 6 'are cut from opposite directions. The first and second terminal portions 7a ′ and 8a ′ of the current path forming conductor 4a are connected to an electric circuit through which a current to be detected flows, similarly to the first and second terminal portions 7a and 7b of FIG. . The fifth semiconductor regions 47 and 47 ′ as the main operation regions of the first and second Hall elements 35 and 35 ′ are arranged inside the first and second grooves 6 and 6 ′ when seen in a plan view. Yes.
The semiconductor chip 20 ′ including the first and second Hall elements 35 and 35 ′ is fixed to the metal support plate 21 as shown in FIG. The second part 2 ′ is positioned with respect to the first part 1 ′ using the first and second positioning portions 5 a ′ and 5 b ′, and is fixed by the adhesive layer 3 ′. The first resin molded body 5 ′ constituting the enclosure with the second resin molded body 30 ′ is a hexahedron similar to the first resin molded body 5 of FIG. 1, and the first and second Main surfaces 101, 102, first, second, third and fourth side surfaces 103, 104, 105, 106. One lead-out portion made of the first terminal portion 7a ′ of the current path forming conductor 4a is led out from the third side surface 105, and the other lead-out portion made of the second terminal portion 8a ′ is taken out from the first side surface 103. Is derived from A plurality of external lead terminals 22 ′ to 25 ′ shown in FIG. 16 are arranged on the positioning portion 5 b ′ of FIG. 15 and are led out from the first side surface 103. Both the terminal portion 8a ′ and the external lead terminals 22 ′ to 25 ′ are led out from the first side surface 103, but they do not overlap in plan view.
[0028]
The directions of the magnetic field H generated based on the current flowing through the current path forming conductor 4a are opposite to each other as shown by broken lines in FIG. 19 with respect to the first and second Hall elements 35 and 35 '. The first and second electrodes 51 and 52 of the first Hall element 35 and the first of the second Hall element 35 'and the first Hall element 35' in order to cause a known control current Ic to flow through the first and second Hall elements 35 and 35 '. The second electrodes 51 'and 52' are connected to the known control current supply circuit 37a shown in FIG. The output circuit 36a for synthesizing the output voltages of the first and second Hall elements 35 and 35 'to obtain a voltage corresponding to the detected current includes first, second and third differential amplifiers 71 and 72. , 73. The positive input terminal of the first differential amplifier 71 is connected to the third electrode 53 of the first Hall element 35, and the negative input terminal is connected to the fourth electrode 54 of the first Hall element 35. . The positive input terminal of the second differential amplifier 72 is connected to the third electrode 53 ′ of the second Hall element 35 ′, and the negative input terminal is connected to the fourth electrode 54 ′ of the second Hall element 35 ′. It is connected. Accordingly, the first Hall voltage Vh1 obtained from the first differential amplifier 71 and the second Hall voltage -Vh2 obtained from the second differential amplifier 72 have opposite polarities. The positive input terminal of the third differential amplifier 73 is connected to the first differential amplifier 71, and the negative input terminal is connected to the second differential amplifier 72. Therefore, the third differential amplifier 73 provides an output of Vh1 − (− Vh2) = Vh1 + Vh2. That is, the third differential amplifier 73 as the arithmetic means obtains the sum of the absolute value of the output Vh1 of the first differential amplifier 71 and the absolute value of the output −Vh2 of the second differential amplifier 72. .
An output indicating Vh1 + Vh2 can be obtained by providing an inverting circuit in the output stage of the second differential amplifier 72 and providing an adder in place of the third differential amplifier 73.
[0029]
The first and second Hall elements 35 and 35 'are formed on a common semiconductor substrate 42a as shown in FIG. Of course, the first and second Hall elements 35, 35 'can also be formed on separate semiconductor substrates.
[0030]
The second embodiment has the following effects in addition to the same effects as (1) to (10) of the first embodiment.
(1) Since the added value of the absolute values of the outputs of the first and second current detectors, that is, the first and second Hall elements 35 and 35 ', is obtained as the current detection signal, the current detection sensitivity is increased.
(2) Since an intermediate portion of the current path forming conductor 4a is shared by the first and second Hall elements 35 and 35 ', an increase in space is suppressed.
(3) The first and second Hall elements 35 and 35 'are juxtaposed to obtain a combined output, and the direction of the magnetic field H with respect to the first and second Hall elements 35 and 35' is reversed. Therefore, when an unnecessary external magnetic field (noise) is applied to the first and second Hall elements 35 and 35 ', these cancels out, and current detection with little influence of the external magnetic field can be performed. That is, if the Hall voltage based on the unnecessary external magnetic field is V0, the output of the first differential amplifier 71 is Vh1 + V0, the output of the second differential amplifier 72 is -Vh2 + V0, and the output of the third differential amplifier 73 is Vh1 + V0. -(-Vh2 + V0) = Vh1 + Vh2, and an output with little influence of an unnecessary external magnetic field can be obtained, and the detection accuracy of the current Is is improved.
[0031]
[Third Embodiment]
Next, the current detection device of the third embodiment will be described with reference to FIG. However, in FIG. 21, the substantially same parts as those in FIG. The current detection device of FIG. 21 is provided with a first component 1a obtained by modifying the first component 1 of FIG. 1, and the other components are formed in the same manner as FIG. 21 is provided with a current path forming conductor 4b obtained by slightly modifying the current path forming conductor 4 of FIG. 1, and the other components are formed substantially the same as FIG. That is, in FIG. 21, the first and second terminal portions 7a and 8a of the current path forming conductor 4b extend to the left and right as compared to FIG. Further, a portion including the U-shaped groove 6 between the first and second terminal portions 7 a and 8 a of the current path forming conductor 4 b is covered with the first resin forming body 5. Accordingly, one lead-out portion including the first terminal portion 7a of the current path forming conductor 4b is led out from the enclosure 100, that is, the second side surface 104 of the first resin molded body 5, and the second terminal portion 8a is drawn. The other lead-out portion including the lead-out portion is led out from the surrounding body 100, that is, the fourth side surface 106 of the first resin molded body 5. The external lead terminals 22 to 25 of the second component 2 are led out from the first side surface 103 of the enclosure 100 as in FIG. As a result, there is no overlap between the lead-out portion of the current path forming conductor 4 and the lead-out portions of the external lead terminals 22 to 25 in plan view.
[0032]
The third embodiment of FIG. 21 has the following effects in addition to the same effects (1) to (11) as the first embodiment of FIG.
(1) Since the first terminal portion 7a and the second terminal portion 8a are separated from each other, it is easy to attach the first and second terminal portions 7a, 8a to the external circuit.
(2) Since the space between the first and second terminal portions 7a and 8a is covered with the first resin molded body 5, a short circuit between the first and second terminal portions 7a and 8a can be prevented. .
[0033]
[Fourth Embodiment]
The modified current path forming conductor 4c of the fourth embodiment shown in FIG. 22 has a J-shaped groove 6a that functions similarly to the groove 6 of FIG. In FIG. 22, the Hall element 35 is disposed in a portion 80 surrounded by the J-shaped groove 6a as indicated by a dotted line when seen in a plan view. The portion 80 surrounded by the J-shaped groove 6a functions as an electric field or an electromagnetic shield, and also functions as a heat radiator. The current detection device using the current path forming conductor 4c of FIG. 22 has the same effect as that of the first embodiment, and also has the effect of improving the shielding property and the heat dissipation property.
[0034]
[Fifth Embodiment]
FIG. 23 shows the current detection device of the fifth embodiment in the same manner as the current detection device of the first embodiment of FIG. The current detection device of FIG. 23 is provided with a second component 2a obtained by slightly modifying the second component 2 of FIG. 1, and the other components are formed in the same manner as FIG.
[0035]
The second component 2a shown in FIG. 23 is formed in the same manner as the second component 2 of the first embodiment except that the position of the semiconductor chip 20 including the Hall element is changed. In FIG. 23, the semiconductor chip 20 including the Hall element is arranged on the upper surface of the metal support plate 21, that is, on the main surface not facing the current path forming conductor 4. In other words, the metal support plate 21 is disposed between the semiconductor chip 20 including the Hall element and the current path forming conductor 4. Accordingly, the metal support plate 21 in FIG. 23 functions as an electrostatic shield for the semiconductor chip 20. The sixth embodiment has the same effect as the first embodiment.
[0036]
[Sixth Embodiment]
The current detection device of the sixth embodiment shown in FIG. 24 is provided with a first component 1b and a second component 2b obtained by modifying the first component 1 and the second component 2 of the first embodiment. Others are the same as those in the first embodiment. The first component 1b in FIG. 24 has a first and second linearly extending in place of the U-shaped current path forming conductor 4 of the first embodiment in order to have a structure suitable for detecting a leakage current. The current path forming conductors 111 and 112 are provided, and these are integrated by the first resin molded body 113, and the others are formed substantially the same as the first component 1 of the first embodiment. The first and second current path forming conductors 111 and 112 are arranged in parallel with a gap 6 ′ corresponding to the groove 6 in FIG. 1, and the Hall element 35 is located in the gap 6 ′ in plan view. Has been placed. In addition to the first and second terminal portions 7a and 8a, the third and fourth terminal portions 7c and 8c are used to connect the first and second current path forming conductors 111 and 112 to each other or to an external circuit. These are protruded from the first resin molded body 113. The third and fourth terminal portions 7c and 8c are formed with through holes 10c and 10d for connection. The first resin molded body 113 corresponds to the first resin molded body 5 in FIG. 1, and has the same functions as the first and second positioning portions 5a and 5b in FIG. Positioning portions 114 and 115. The second component 2b is attached to the first and second positioning portions 114 and 115 shown in FIG. 24 in the same manner as in the first embodiment. The second component 2b is attached to the first component by an adhesive layer (not shown). It is fixed to the component 1b as in the first embodiment.
The second component 2b shown in FIG. 24 is formed in the same manner as in the first embodiment except that the lead-out direction of the external lead terminals 22 to 25 is changed. That is, in FIG. 24, the external lead terminals 22 and 23 are led out from the second side surface 104 ′ of the first resin molded body 113 in plan view, and the external lead terminals 24 and 26 ′ are extracted from the fourth side surfaces 104 ′ and 106 ′. 25 is derived. The first and second terminal portions 7a and 8a of the first and second current path forming conductors 111 and 112 are led out from the third side surface 105 ', and the third and fourth terminal portions 7c and 8c are 1 side surface 101 ′.
[0037]
When the current detection device of FIG. 24 is used as a leakage current detection device, the first current path forming conductor 111 is connected in series with one of the pair of power supply lines, that is, the forward path, and the second current path forming conductor 112 is connected. Connected in series to the other of the pair of power lines, ie, the return path. In addition, the directions in which the currents Ia and Ib flow in the first and second current path forming conductors 111 and 112 are the same as indicated by arrows in FIG. If there is no leakage current in the electric circuit, the forward current Ia and the backward current Ib are the same. Since the directions of the magnetic fluxes based on the currents Ia and Ib in the hall element 35 are opposite to each other, no hall voltage is generated when Ia and Ib are equal. However, if there is a leakage current, the currents Ia and Ib become inconsistent. Therefore, a magnetic flux corresponding to this difference acts on the Hall element 35, and a Hall voltage proportional to the leakage current is generated.
[0038]
The current detector of FIG. 24 can also be used as a current balance detector. When the first and second measured currents Ia and Ib are passed through the first and second current path forming conductors 111 and 112, a Hall voltage proportional to the difference is obtained.
Note that the third and fourth terminal portions 7c and 8c in FIG. 24 are connected to each other to form a U-shaped current path as in the first embodiment and used in the same manner as in the first embodiment. Can do.
Since the current detection device of the sixth embodiment is configured to arrange the second component 2b on the first component 1b having the first and second positioning portions 114 and 115, it is the same as the first embodiment. It also has the effect of.
[0039]
[Modification]
The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible.
(1) In FIG. 23, a magnetic flux collecting plate made of a magnetic material can be disposed above the semiconductor chip 20 including the Hall element.
(2) The semiconductor substrates 42 and 42a can be formed of another semiconductor such as silicon.
[Brief description of the drawings]
FIG. 1 is a plan view showing a current detection device before providing an additional resin layer according to a first embodiment.
2 is a cross-sectional view showing a part of the AA line of the current detection device according to the first embodiment of FIG. 1; FIG.
FIG. 3 is a cross-sectional view taken along line BB in FIG.
4 is a cross-sectional view taken along the line CC in FIG. 1. FIG.
5 is a cross-sectional view of the current detection device of FIG. 1 disassembled into first and second parts and shown in the same cross section as FIG. 2;
6 is a plan view of the first part of FIG. 1. FIG.
FIG. 7 is a plan view showing a second part of FIG. 1;
8 is a cross-sectional view showing a current path forming conductor of the first component in FIG. 6;
9 is a plan view showing the second part of FIG. 7 with the resin molded body omitted. FIG.
10 is a bottom view of the semiconductor chip of FIG. 9. FIG.
11 is a plan view showing a Hall element portion of the semiconductor substrate of FIG.
12 is a cross-sectional view showing a part of the line DD in FIG.
FIG. 13 is a cross-sectional view showing a current detection device provided with an additional resin layer, similar to FIG.
14 is a cross-sectional view showing a current detection device provided with an additional resin layer, similar to FIG.
FIG. 15 is a plan view showing a first part of the current detection device according to the second embodiment;
FIG. 16 is a plan view showing a second component of the second embodiment.
17 is a plan view showing a current path forming conductor of FIG. 15; FIG.
FIG. 18 is a plan view showing an S-shaped current path and first and second Hall elements according to the second embodiment.
FIG. 19 is a cross-sectional view showing a part of the current detection device of the second embodiment in a portion corresponding to the line EE in FIG. 18;
FIG. 20 is an electric circuit diagram showing a current detection device of a second embodiment.
FIG. 21 is a plan view showing a current detection device according to a third embodiment, similar to FIG.
FIG. 22 is a plan view showing a current path forming conductor of a fourth embodiment.
FIG. 23 is a cross-sectional view showing a current detection device according to a fifth embodiment, similar to FIG.
24 is a cross-sectional view showing the current detection device of the sixth embodiment in the same manner as in FIG.
[Explanation of symbols]
1, 2 First and second parts
3 Adhesive layer
4 Current path forming conductor
5, 30 Resin molded body
5a, 5b Positioning part
20 Semiconductor chip
21 Support plate
22-25 External lead terminal
35 Hall element

Claims

A device for detecting or measuring electric current in an electric circuit,
A first current path forming conductor for flowing a current of the electric circuit and a part for covering a part of the current path forming conductor and a positioning portion for positioning a second part to be described later A first part comprising an insulating covering;
A hall element, a plurality of lead terminals for connecting the hall element to an external circuit, and a second insulating coating covering the hall element and a part of the plurality of lead terminals, And a second component positioned with respect to the positioning portion of the first component such that a magnetic field generated based on a current flowing through the current path forming conductor acts on the Hall element;
An adhesive layer securing the second part to the first part;
The current path forming conductor has a lead-out portion led out from an enclosure made of the first and second insulating coverings in plan view, and the plurality of lead terminals are planar And the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals in plan view. current detecting apparatus characterized by being.

The enclosure includes first and second main surfaces facing each other and first, second, third, and fourth side surfaces between the first and second main surfaces, and the lead terminal lead-out portion Is derived from the first side surface, one lead-out portion of the current path forming conductor is led out from the second side surface, and the other lead portion of the current path forming conductor is led out from the fourth side surface. current detecting device according to claim 1, wherein the being.

A device for detecting or measuring electric current in an electric circuit ,
A first current path forming conductor for flowing a current of the electric circuit and a part for covering a part of the current path forming conductor and a positioning portion for positioning a second part to be described later A first part comprising an insulating covering;
A hall element, a plurality of lead terminals for connecting the hall element to an external circuit, and a second insulating coating covering the hall element and a part of the plurality of lead terminals, And a second component positioned with respect to the positioning portion of the first component such that a magnetic field generated based on a current flowing through the current path forming conductor acts on the Hall element ;
An adhesive layer securing the second part to the first part ;
Wherein the current path forming conductor comprises a first and a second current path conductors (111, 112), first and second current path forming conductor (111, 112) to the current flowing here An electric current detecting device arranged so that a magnetic field based thereon can be applied to the hall element .