TWI483653B - Insert-chip and plasma torch - Google Patents
Insert-chip and plasma torch Download PDFInfo
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- TWI483653B TWI483653B TW100128807A TW100128807A TWI483653B TW I483653 B TWI483653 B TW I483653B TW 100128807 A TW100128807 A TW 100128807A TW 100128807 A TW100128807 A TW 100128807A TW I483653 B TWI483653 B TW I483653B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/02—Plasma welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/003—Cooling means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/28—Cooling arrangements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/341—Arrangements for providing coaxial protecting fluids
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/44—Plasma torches using an arc using more than one torch
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma Technology (AREA)
- Arc Welding In General (AREA)
Description
〔技術分野〕[Technical division]
本發明係關於一種電漿銲接用火炬之插入式晶片以及使用該插入式晶片之電漿火炬。The present invention relates to a plug-in wafer for a plasma welding torch and a plasma torch using the same.
〔背景技術〕〔Background technique〕
在專利文獻1,記載:改良藉由電漿鍵孔熔接而造成之鍵孔剖面形狀之噴嘴形狀。在專利文獻2,記載:為了形成1個之熔融坑池,因此,相對於熔接線方向而直交電極前端之排列,來配置2個之電弧熔接火炬之藉由各火炬而造成之同時觸吻熔接。在專利文獻3,記載:在電弧熔接之目標瞄準位置之前方0~2mm之熔融坑池,照射雷射光而進行鍵孔熔接之複合熔接方法(圖4、0024、0025)。在專利文獻4,記載:藉由前面之第1雷射束而進行非貫通熔接,在藉此而形成之孔開口,對準焦點,藉由第2雷射束而進行貫通(鍵孔)熔接之雷射熔接方法。Patent Document 1 describes a nozzle shape in which a cross-sectional shape of a keyhole is obtained by welding a plasma keyhole. Patent Document 2 describes that in order to form one crater pool, the arrangement of the front ends of the electrodes is arranged in the direction of the weld line, and the two arc welding torches are simultaneously coupled by the torches. . Patent Document 3 describes a composite welding method in which a molten pit pool of 0 to 2 mm is irradiated with laser light before the target aiming position of arc welding, and keyhole welding is performed (FIG. 4, 0024, 0025). Patent Document 4 discloses that a non-penetrating fusion is performed by the first laser beam in the front, and a hole opening formed thereby is aligned, and a through-hole (keyhole) fusion is performed by the second laser beam. Laser welding method.
〔先前技術文獻〕[Previous Technical Literature]
〔專利文獻〕[Patent Document]
〔專利文獻1〕日本特開平8-10957號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 8-10957
〔專利文獻2〕日本特開平6-155018號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 6-150518
〔專利文獻3〕日本特開2004-298896號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2004-298896
〔專利文獻4〕日本特開2008-126315號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2008-126315
〔專利文獻5〕日本特願2009-201304號公報[Patent Document 5] Japanese Patent Application No. 2009-201304
〔專利文獻6〕日本特願2010-264955號公報[Patent Document 6] Japanese Patent Application No. 2010-264955
〔發明之概要〕[Summary of the Invention]
向來藉由1火炬而組成電漿電弧熔接之電漿電弧之橫剖面係概略圓形。在板厚未滿3mm,不可能藉由電漿電弧而進行鍵孔熔接,因此,採用觸吻熔接(熱傳導型熔接),但是,即使是觸吻熔接,也在進行高速度化之時,容易發生(甲)凹割之產生以及(乙)由於寬幅顆粒而造成之高溫破裂。在高速熔接,電流係高電流而成為寬幅電弧,因此,成為寬幅淺熔入之顆粒形狀,在凝固時,容易發生高溫破裂。The cross section of the plasma arc, which has been composed of a torch and is composed of a plasma arc welding, is generally circular. When the thickness of the plate is less than 3 mm, it is impossible to weld the keyhole by the plasma arc. Therefore, the contact welding (thermal conduction type fusion) is used, but even when the kiss is welded, it is easy to increase the speed. The occurrence of (a) concave cut and (b) high temperature cracking due to wide particles. In the high-speed welding, the current is a high current and becomes a wide arc. Therefore, it becomes a particle shape of a wide shallow melt, and high temperature cracking easily occurs during solidification.
在向來藉由1火炬而組成之電漿電弧熔接,以3~10mm之板厚而使得鍵孔熔接來進行高速度化時,顆粒形狀係可以成為中央部隆起之凸形狀而邊緣部下降之凹割,因此,不容易進行高速度化。也有藉由2支火炬而組成之單一坑池之高速度化,但是,為了成為單一坑池,因此,必須大幅度地傾斜火炬間,由於相互拉引之電弧力和傾斜來造成之磁性吹附,而容易散亂電弧,變得不安定。In the case of a plasma arc welding which is composed of a torch, the keyhole is welded at a plate thickness of 3 to 10 mm to increase the speed, and the particle shape can be a convex shape of the central portion and a concave portion at the edge portion. Cutting, therefore, it is not easy to increase the speed. There is also a high speed of a single pit pool composed of two torches, but in order to become a single pit pool, it is necessary to greatly tilt the torches, and the magnetic blows due to the arc force and inclination of the mutual pull, It is easy to dissipate the arc and become unstable.
於是,本發明者等係提供能夠以安定之電弧來實現無高溫破裂或無凹割之高速度熔接插入式晶片以及使用該插入式晶片之電漿火炬(專利文獻5)。Then, the inventors of the present invention have provided a high-speed welded insert wafer capable of achieving high-temperature cracking or no undercutting with a stable arc and a plasma torch using the insert wafer (Patent Document 5).
此為插入式晶片以及裝設該晶片而在各電極配置空間來插入各電極之電漿火炬,該插入式晶片係具備:2個電極配置空間以及分布在同一直徑線上而各個分別連通於各電極配置空間來對向在平行於前述直徑線之熔接線呈打開之2個噴嘴。This is a plug-in type wafer and a plasma torch in which the electrodes are placed in each electrode arrangement space, and the interposer type wafer has two electrode arrangement spaces and is distributed on the same diameter line and each is connected to each electrode. The space is configured to face the two nozzles that are open in a weld line parallel to the aforementioned diameter line.
如果藉由裝設該插入式晶片之電漿火炬的話,則能夠進行以2個電弧來形成1個熔融坑池之單一坑池2個電弧之熔接。電漿電 弧之橫剖面係成為長細於熔接進行方向(y)之熱源,因此,抑制相對於熱量之顆粒幅寬(x方向)變窄,即使是進行高速度化,也不會發生高溫破裂。此外,可以藉由成為單一坑池2個電弧,而使得表面顆粒,變得平坦。能夠藉由使用離開某種程度距離之2支電漿火炬之同步熔接,而得到稍微類似之效果,但是,熔接進行方向之電弧間隔變寬,因此,在短熔接長度之工件(母材:熔接對象材料),不可能進行在同一通道之熔接,需要2通道熔接,不容易進行高速度化。此外,電弧間隔變寬,因此,後面電弧係必須再度熔融一度凝固之顆粒,在後面熔接,需要高度之入熱。如果藉由專利文獻5所提示之使用在1晶片具備2個噴嘴之插入式晶片之單一坑池2個電弧熔接的話,則噴嘴間隔變短,因此,解決消除這些問題。When the plasma torch of the insert wafer is mounted, it is possible to perform welding of two arcs of a single pit in which one crater is formed by two arcs. Plasma electricity Since the cross section of the arc is a heat source that is thinner in the direction in which the welding is performed (y), the particle width (x direction) with respect to heat is suppressed from being narrowed, and even if the speed is increased, high temperature cracking does not occur. In addition, the surface particles can be made flat by becoming two arcs in a single pit. It is possible to obtain a slightly similar effect by using the simultaneous welding of two plasma torches that are separated by a certain distance, but the arc interval in the direction in which the welding is performed is widened, and therefore, the workpiece in the short welding length (base metal: welding) Object material), it is impossible to weld in the same channel, and it is necessary to weld two channels, and it is not easy to increase the speed. In addition, the arc interval is widened, and therefore, the rear arc system must re-melt the once solidified particles again, and weld them later, requiring a high degree of heat. When two arc weldings of a single pit of a plug-in wafer having two nozzles in one wafer are used as disclosed in Patent Document 5, the nozzle interval is shortened, and therefore, the problem is solved.
但是,在1個插入式晶片2個電弧之電漿熔接,施加於插入式晶片之熱負荷係變大。為了更有效地進行高速度化,因此,必須提高插入式晶片之冷卻能力。However, in the plasma welding of two arcs of one plug-in wafer, the thermal load applied to the insert wafer becomes large. In order to increase the speed more efficiently, it is necessary to increase the cooling capacity of the interposer wafer.
於是,本發明人等係提供一種能夠以安定之電弧而更加高速地進行無高溫破裂或無凹割之熔接且高冷卻能力之插入式晶片(專利文獻6)。該插入式晶片係具備:2個之電極配置空間、各個分別連通至各電極配置空間之2個噴嘴、以及在該2個噴嘴之中間點而位處在相對於分布該2個噴嘴之平面呈交叉之平面來折返冷卻水之V型冷卻水流路。藉此而在晶片前端面(母材對向面)之附近,順暢地折返冷卻水,不會局部地滯留水或氣泡,晶片之冷卻能力變高。可以藉由進行開孔而相對於晶片端面呈傾斜,並且,交叉於前端部,來便宜地形成V型冷卻水流路。於是,可以增大熔接電力而更加高速地進行熔接。在專利文獻6,也提示可以在晶片基體呈自由裝卸地結合1對之噴嘴構件插入式晶片。如果 藉此的話,則可以在由於高熱而使得噴嘴構件之下端之噴嘴部分呈變形或熔損時,以新品來替換該噴嘴構件,仍然直接地使用晶片基體,使得維修保養成本變得便宜。Then, the inventors of the present invention have provided a plug-in type wafer capable of performing high-temperature-free cracking or no-cutting welding with high cooling capacity with a stable arc (Patent Document 6). The interposer wafer system includes two electrode arrangement spaces, two nozzles each connected to each electrode arrangement space, and a position at a midpoint between the two nozzles in a plane relative to the distribution of the two nozzles The plane of the intersection is turned back to the V-type cooling water flow path of the cooling water. Thereby, the cooling water is smoothly folded back in the vicinity of the wafer leading end surface (the base material facing surface), and water or bubbles are not locally retained, and the cooling ability of the wafer is increased. The V-shaped cooling water flow path can be formed inexpensively by tilting with respect to the end surface of the wafer by the opening and crossing the front end portion. Therefore, the welding power can be increased and the welding can be performed at a higher speed. Patent Document 6 also suggests that a pair of nozzle member insertion type wafers can be detachably coupled to a wafer substrate. in case By this, it is possible to replace the nozzle member with a new one when the nozzle portion at the lower end of the nozzle member is deformed or melted due to high heat, and the wafer base is still directly used, so that the maintenance cost becomes inexpensive.
本發明係關於一種電漿銲接用火炬之插入式晶片,特別係關於一種複數個之噴嘴構件呈可自由裝卸地結合於1個晶片基體之插入式晶片之改良,第1目的係提高各噴嘴構件之冷卻能力,第2目的係可設定噴嘴之指向方向而成為數種,第3目的係容易且簡單地進行對於晶片基體而規定噴嘴之指向方向來結合噴嘴構件之作業。The present invention relates to an insert wafer for a plasma welding torch, and more particularly to an improvement of a plurality of nozzle members that are detachably coupled to a wafer substrate. The first object is to improve each nozzle member. The second object is to set the direction in which the nozzles are directed, and the third object is to easily and simply perform the operation of combining the nozzle members with respect to the wafer substrate to define the direction in which the nozzles are directed.
(1)一種電漿銲接用火炬之插入式晶片係具備複數個之噴嘴構件(20a,20b)該噴嘴構件(20a,20b)具有在中央打開噴嘴(3a,3b)之傘部(21a,21b)、連續於該傘部之幹部(22a,22b)和連續於該幹部之公螺紋部(24a,24b),在前述之幹部和公螺紋部之間,具有O型環,在內部則具有連通至前述噴嘴之電極配置空間(2a,2b);具備晶片基體(1),其具有由各噴嘴構件之前述公螺紋部開始插通至幹部為止之各噴嘴構件插入孔(18a,18b)、藉由插通於各噴嘴構件插入孔之各噴嘴構件之前述傘部來抵接於前端平面(1d,1e)而關閉且形成前述噴嘴構件插入孔之一部分而在和前述幹部之間來形成冷媒流通空間之冷媒循環孔、冷媒承受孔、冷媒出孔、繫接相互鄰接之前述冷媒循環孔之冷媒通孔、前述冷媒循環孔之一個來繫接於前述冷媒承受孔之冷媒通孔和前述冷媒循環孔之另外一個來繫接於前述冷媒出孔之冷媒通孔;並且,具備將插通於前述噴嘴構件插入孔之前述噴嘴構件固定於前述之晶片基體之固定手段。(1) A plug-in wafer for a plasma welding torch is provided with a plurality of nozzle members (20a, 20b) having an umbrella portion (21a, 21b) for opening the nozzles (3a, 3b) at the center a continuous portion (22a, 22b) continuous to the umbrella portion and a male thread portion (24a, 24b) continuous with the stem portion, having an O-ring between the aforementioned stem portion and the male thread portion, and having communication inside The electrode arrangement space (2a, 2b) to the nozzle; the wafer base body (1) having the nozzle member insertion holes (18a, 18b) from which the male screw portion of each nozzle member is inserted into the trunk portion The umbrella portion that is inserted into each nozzle member insertion hole of each nozzle member abuts against the front end plane (1d, 1e) to close and form one of the nozzle member insertion holes to form a refrigerant flow between the stem portion and the stem portion. a refrigerant circulation hole, a refrigerant receiving hole, a refrigerant outlet hole, a refrigerant through hole of the refrigerant circulation hole adjacent to each other, and one of the refrigerant circulation holes to connect the refrigerant through hole of the refrigerant receiving hole and the refrigerant circulation The other one of the holes is attached to the foregoing A refrigerant passage hole for the refrigerant outlet hole; and a fixing means for fixing the nozzle member inserted into the nozzle member insertion hole to the wafer base body.
此外,為了容易理解,因此,括號內係圖式所示,於後敘述 之實施例中,相對應或相當之元件符號,或例舉對應事項作為參考而附記的。在以下亦相同。In addition, for the sake of easy understanding, therefore, the brackets are shown in the figure, which will be described later. In the embodiments, the corresponding or equivalent component symbols, or the corresponding items, are attached as a reference. The same is true below.
若藉由裝設該插入式晶片(1)之電漿火炬的話,則能夠進行以複數個之電弧來形成1個熔融坑池之單一坑池複數個電弧之熔接。例如在進行以2個電弧來形成1個熔融坑池之單一坑池2個電弧之熔接之狀態下,電漿火炬之橫剖面係成為長細於熔接進行方向(y)之熱源,因此,抑制相對於熱量之顆粒幅寬(x方向)變窄,即使是進行高速度化,也不會發生高溫破裂。此外,可以藉由成為單一坑池2個電弧,而在板厚3~10mm,以前面電弧,來進行鍵孔熔接,以後面電弧來進行寬幅觸吻熔接,而使得表面顆粒變得平坦。在板厚未滿3mm,能夠以前面電弧,來進行下挖熔接,以後面電弧來使得表面顆粒變得平坦。When the plasma torch of the insert wafer (1) is mounted, it is possible to perform welding of a plurality of arcs in a single pit pool in which a plurality of arcs are formed into one molten pit pool. For example, in a state in which two arcs of a single pit pool forming one molten pit pool are welded by two arcs, the cross section of the plasma torch is a heat source that is thinner in the direction in which the welding is performed (y), and therefore, the relative resistance is suppressed. The particle width (x direction) of the heat is narrowed, and even if the speed is increased, high temperature cracking does not occur. In addition, by making the arc into a single pit, the keyhole is welded by the front arc at a plate thickness of 3 to 10 mm, and the wide-contact contact is welded by the rear arc to make the surface particles flat. In the case where the plate thickness is less than 3 mm, the front arc can be used for the lower excavation welding, and the rear arc is used to make the surface particles flat.
能夠藉由使用離開某種程度距離之2支電漿火炬之同步熔接,而得到稍微類似之效果,但是,熔接進行方向之電弧間隔變寬,因此,在短熔接長度之工件(熔接對象材料),不可能進行在同一通道之熔接,需要2通道熔接,不容易進行高速度化。此外,電弧間隔變寬,因此,後面電弧係必須再度熔融一度凝固之顆粒,在後面電弧,需要高度之入熱。若藉由使用在1晶片具備複數個之噴嘴構件之本發明插入式晶片之單一坑池複數個電弧熔接的話,則噴嘴間隔變短,因此解決消除這些問題。It is possible to obtain a slightly similar effect by using the simultaneous welding of two plasma torches which are separated by a certain distance, but the arc interval in the direction in which the welding is performed is widened, and therefore, the workpiece having a short welding length (welding material) It is impossible to perform welding in the same channel, and it is necessary to weld two channels, and it is not easy to increase the speed. In addition, the arc interval is widened, so that the rear arc system must re-melt the once solidified particles again, and in the latter arc, a high degree of heat is required. If a plurality of arc weldings of a single pit of the insert wafer of the present invention having a plurality of nozzle members in one wafer are used, the nozzle interval is shortened, and thus solving these problems is solved.
此外,在晶片基體(1)之冷媒循環孔,接合在各噴嘴構件(20a,20b)之幹部(22a,22b)之外周圍面而流動冷媒(冷卻水),因此,各噴嘴構件(20a,20b)之冷卻能力變高。此外,在晶片基體(1),冷媒係流動在冷媒承受孔、1個冷媒循環孔繫接於該冷媒承受孔之冷媒通孔、繫接相互鄰接之冷媒循環孔之冷 媒通孔、其他之冷媒循環孔繫接於冷媒出孔之冷媒通孔,因此,晶片基體(1)之冷卻能力也變高。Further, the refrigerant circulation hole of the wafer substrate (1) is joined to the peripheral surface of the respective nozzle members (20a, 20b) and flows with a refrigerant (cooling water). Therefore, each nozzle member (20a, 20b) The cooling capacity becomes higher. Further, in the wafer substrate (1), the refrigerant flows through the refrigerant receiving hole, and one refrigerant circulation hole is connected to the refrigerant through hole of the refrigerant receiving hole, and is connected to the refrigerant circulation hole adjacent to each other. The medium through holes and other refrigerant circulation holes are connected to the refrigerant through holes of the refrigerant outlet holes, and therefore, the cooling capacity of the wafer substrate (1) is also increased.
於是,可以使得熔接電力變大而更加高速地進行熔接。在由於高熱而使得噴嘴構件之下端之噴嘴部分呈變形或熔損時,能夠以新品來替換該噴嘴構件,仍然直接地使用晶片基體,使得維修保養成本變得便宜。As a result, the welding power can be increased and the welding can be performed at a higher speed. When the nozzle portion at the lower end of the nozzle member is deformed or melted due to high heat, the nozzle member can be replaced with a new one, and the wafer substrate is still directly used, making maintenance cost cheap.
〔發明之實施形態〕[Embodiment of the Invention]
(1a):前述(1)記載之電漿銲接用火炬之插入式晶片係前述之固定手段為藉由前述噴嘴構件之前述公螺紋部以及形成前述噴嘴構件插入孔(18a,18b)之一部分而以螺絲來結合前述公螺紋部之母螺紋孔而構成。若藉此的話,則可以藉由在晶片基體(1),形成以螺絲來結合該公螺紋部之母螺紋孔,不會由於螺絲之轉動而在晶片基體造成變形,來容易地裝卸噴嘴構件。(1) The above-described fixing means for the plasma welding torch according to the above (1), wherein the fixing means is a part of the male screw portion of the nozzle member and a part of the nozzle member insertion hole (18a, 18b). The screw is used to join the female screw hole of the male thread portion. By doing so, the female screw hole of the male screw portion can be joined to the wafer base body (1), and the nozzle member can be easily attached and detached without causing deformation of the wafer base due to the rotation of the screw.
(2):前述(1)記載之電漿銲接用火炬之插入式晶片係前述之固定手段為螺合於插入至前述晶片基體(1)之噴嘴構件插入孔(18a,18b)之噴嘴構件之前述公螺紋部而協動於噴嘴構件來夾緊晶片基體之螺母(25a,25b)。(2) The insert type wafer for a plasma welding torch according to the above (1), wherein the fixing means is screwed to a nozzle member inserted into the nozzle member insertion hole (18a, 18b) of the wafer base (1). The male thread portion cooperates with the nozzle member to clamp the nut (25a, 25b) of the wafer base.
(3):前述(1)記載之電漿銲接用火炬之插入式晶片係具備:對於前述之晶片基體(1)而阻止前述噴嘴構件(20a,20b)之中心軸作為中心之旋轉之阻止旋轉手段。(3) The insert wafer of the plasma welding torch according to the above (1), wherein the wafer base body (1) prevents rotation of the central axis of the nozzle member (20a, 20b) as a center means.
(4):前述(3)記載之電漿銲接用火炬之插入式晶片係前述之阻止旋轉手段為藉由削除前述噴嘴構件(20a,20b)之前述傘部(21a,21b)之一部分側面之切口面(26a,26b)以及前述晶片基體(1)之具有位處在相鄰接之噴嘴構件插入孔(18a,18b)之間來抵接前述切口面(26a,26b)之卡止面之前端突起(1c) 而組成。(4) The plug-in wafer for a plasma welding torch according to the above (3), wherein the rotation preventing means is a part of a side surface of the umbrella portion (21a, 21b) by cutting the nozzle member (20a, 20b) The slit faces (26a, 26b) and the aforementioned wafer substrate (1) have a position between the adjacent nozzle member insertion holes (18a, 18b) to abut the engaging faces of the slit faces (26a, 26b) Front end protrusion (1c) And composed.
(5):前述(3)所記載之電漿銲接用火炬之插入式晶片係前述噴嘴構件之至少一種具有同心於噴嘴構件之中心軸之噴嘴(3a,3b)(圖6之a1~a3)。(5) The insert wafer of the torch for plasma welding according to the above (3), wherein at least one of the nozzle members has a nozzle (3a, 3b) concentric with a central axis of the nozzle member (a1 to a3 of Fig. 6) .
(6):前述(3)記載之電漿銲接用火炬之插入式晶片,其各噴嘴構件插入孔(18a,18b)與晶片基體之中心軸係平行,且前述噴嘴構件之至少一種(20c)具有傾斜於離開晶片基體之中心軸方向之噴嘴(3c)(圖6之b1~b3)。(6) The insert wafer of the plasma welding torch according to the above (3), wherein the nozzle member insertion holes (18a, 18b) are parallel to a central axis of the wafer substrate, and at least one of the nozzle members (20c) There is a nozzle (3c) inclined to the direction away from the central axis of the wafer substrate (b1 to b3 of Fig. 6).
(7):前述(3)記載之電漿銲接用火炬之插入式晶片,其各噴嘴構件插入孔(18a,18b)與晶片基體之中心軸係平行,且前述噴嘴構件之至少一種(20d)具有傾斜於接近晶片基體之中心軸方向之噴嘴(3d)(圖6之c1~c3)。(7) The insert wafer of the plasma welding torch according to the above (3), wherein the nozzle member insertion holes (18a, 18b) are parallel to a central axis of the wafer substrate, and at least one of the nozzle members (20d) There is a nozzle (3d) inclined to the direction of the central axis of the wafer substrate (c1 to c3 of Fig. 6).
(8):一種電漿銲接用火炬係具備:前述(1)至(7)中任一項所記載之插入式晶片以及在該插入式晶片之各電極配置空間(2a,2b)來插入各個前端部之電極(12a,12b)(圖2)。(8) A torch for a plasma welding, comprising: the insert wafer according to any one of (1) to (7), and each of the electrode arrangement spaces (2a, 2b) of the interposer wafer; Electrodes (12a, 12b) at the front end (Fig. 2).
本發明之其他目的及特徵係可藉參考圖式於以下實施例之說明中明確地顯示出。Other objects and features of the present invention will be apparent from the following description of the embodiments.
〔實施例〕[Examples]
-第1實施例--First Embodiment -
圖1中,由上方來俯視顯示出作為第1實施例之電漿火炬、也就是第1實施例之電漿電弧火炬之外筒14之內部,在圖2,顯示圖1上之Ⅱ-Ⅱ線方向之縱剖面。第1實施例之電漿電弧火炬係進行電漿熔接之形態。在參考圖2時,插入式晶片之晶片基體1係藉由以螺絲來壓緊內蓋罩6於晶片台5而固定在晶片台5。晶片台5係固定在絕緣本體7,在絕緣本體7,固定電極台10a、10b及絕緣襯墊11。In Fig. 1, the inside of the plasma torch as the first embodiment is shown in plan view, that is, the plasma arc torch outer tube 14 of the first embodiment. In Fig. 2, II-II of Fig. 1 is shown. Longitudinal section of the line direction. The plasma arc torch of the first embodiment is in the form of plasma welding. Referring to FIG. 2, the wafer substrate 1 of the interposer wafer is fixed to the wafer stage 5 by pressing the inner cover 6 to the wafer stage 5 with screws. The wafer stage 5 is fixed to the insulative housing 7, and the insulative housing 7 is fixed to the electrode pads 10a and 10b and the insulating spacer 11.
屏蔽蓋罩8係固定在絕緣本體7。以2分割而分離於外筒14直徑方向之第1電極台10a和第2電極台10b,係藉由絕緣襯墊11而分離。The shield cover 8 is fixed to the insulative housing 7. The first electrode stage 10a and the second electrode stage 10b which are separated in the radial direction of the outer tube 14 by two divisions are separated by the insulating spacer 11.
本實施例之插入式晶片係在晶片基體1,裝設2個之噴嘴構件20a、20b,在參考顯示細節之圖5時,於各噴嘴構件20a、20b,具有在中央打開噴嘴3a、3b之傘部21a、21b、連續於該傘部之幹部22a、22b和連續於該幹部之公螺紋部24a、24b,在前述之幹部和公螺紋部之間,具有成為密封材料之O型環23a、23b,在內部,具有連通至前述噴嘴3a、3b之電極配置空間2a、2b。The interposer wafer of the present embodiment is attached to the wafer substrate 1 with two nozzle members 20a, 20b. When referring to Fig. 5 of the detailed description, the nozzle members 20a, 20b have the central opening nozzles 3a, 3b. The umbrella portions 21a and 21b, the trunk portions 22a and 22b continuous with the umbrella portion, and the male screw portions 24a and 24b continuous with the trunk portion have an O-ring 23a serving as a sealing material between the trunk portion and the male screw portion. 23b has an electrode arrangement space 2a, 2b connected to the nozzles 3a, 3b inside.
在晶片基體1,具有由各噴嘴構件之前述公螺紋部開始插通至幹部為止之各噴嘴構件插入孔18a、18b、藉由插通於各噴嘴構件插入孔之各噴嘴構件之傘部來抵接於前端平面1d、1e而關閉且形成噴嘴構件插入孔之一部分而在和幹部之間來形成冷卻水流通空間之冷卻水循環孔1f、1g、水承受孔1h(圖4)、水出孔1i、繫接相互鄰接之冷卻水循環孔之橫通水孔1j、冷卻水循環孔1f繫接於水承受孔1h之橫通水孔1k和冷卻水循環孔1g繫接於水出孔1i之橫通水孔1l。In the wafer substrate 1, each of the nozzle member insertion holes 18a and 18b that is inserted into the trunk portion from the male screw portion of each nozzle member is attached to the umbrella portion of each nozzle member that is inserted into each nozzle member insertion hole. Cooling water circulation holes 1f, 1g, water receiving holes 1h (Fig. 4), water outlet holes 1i which are closed to the front end planes 1d, 1e and which form part of the nozzle member insertion hole and form a cooling water flow space between the dry portions And the horizontal water hole 1j of the cooling water circulation hole adjacent to each other, the horizontal water hole 1k of the cooling water circulation hole 1f connected to the water receiving hole 1h, and the horizontal water hole of the cooling water circulation hole 1g connected to the water outlet hole 1i 1l.
在該實施例,正如圖5(a)所示,藉由在噴嘴構件20a、20b之公螺紋部24a、24b,以螺絲來結合螺母25a、25b,壓緊於晶片基體1,而將噴嘴構件20a、20b,結合於晶片基體1。In this embodiment, as shown in Fig. 5(a), the nozzle member is pressed by screwing the nuts 25a, 25b to the wafer base 1 by the male thread portions 24a, 24b of the nozzle members 20a, 20b. 20a, 20b, bonded to the wafer substrate 1.
於再度參考圖2時,噴嘴構件20a、20b之電極配置空間2a、2b係分布在直交於晶片基體1之中心軸(z)之同一直徑線(y),由該中心軸開始成為等距離,呈平行地延伸於中心軸(z)。連續於電極配置空間2a、2b之噴嘴3a、3b係在該實施例,同心於電極配置空間2a、2b之中心軸,對向在無圖示之母材。這些噴嘴3a、3b係也在本實施例,分布在直交於晶片基體(外筒14)之中心軸 (z)之同一直徑線(y)上,平行於該中心軸,並且,由此開始成為等距離。Referring again to FIG. 2, the electrode arrangement spaces 2a, 2b of the nozzle members 20a, 20b are distributed on the same diameter line (y) orthogonal to the central axis (z) of the wafer substrate 1, and are equidistant from the central axis. It extends in parallel to the central axis (z). In the embodiment, the nozzles 3a and 3b which are continuous in the electrode arrangement spaces 2a and 2b are concentric with the central axes of the electrode arrangement spaces 2a and 2b, and are opposed to a base material (not shown). These nozzles 3a, 3b are also distributed in the center axis of the wafer substrate (outer tube 14) in this embodiment. The same diameter line (y) of (z) is parallel to the central axis and, thus, begins to be equidistant.
在各電極配置空間2a、2b插入前端部之第1電極12a、第2電極12b係貫通絕緣本體7,藉由螺絲13a、13b而固定於各電極台10a、10b,在各電極配置空間2a、2b之軸心位置,藉由定心石9a、9b而進行定位。在晶片基體1之對向於母材(無圖示)之前端面(下端面),繫接於各電極配置空間2a、2b之噴嘴3a、3b呈開口。連結噴嘴3a、3b之直線(y)呈延伸之方向係熔接方向。晶片基體1係在該直線(y)呈延伸之方向(熔接方向),正如圖2所示而成為寬幅,但是,在直交於該直線(y)之方向(x)、也就是熔接對象之前面之幅寬方向,成為楔子狀,側面成為傾斜面1a、1b(圖4(a))。The first electrode 12a and the second electrode 12b which are inserted into the tip end portion of each of the electrode arrangement spaces 2a and 2b are passed through the insulative housing 7, and are fixed to the electrode pads 10a and 10b by screws 13a and 13b, and the space 2a is arranged in each electrode. The axial position of 2b is positioned by the centering stones 9a, 9b. The nozzles 3a and 3b which are connected to the electrode arrangement spaces 2a and 2b are opened to the end surface (lower end surface) of the wafer base 1 facing the base material (not shown). The straight line (y) connecting the nozzles 3a, 3b is in a direction in which the direction of extension is a welding direction. The wafer substrate 1 is in a direction in which the straight line (y) extends (welding direction), and is wide as shown in FIG. 2, but is orthogonal to the direction (x) of the straight line (y), that is, a welded object. The front width direction is wedge-shaped, and the side faces are inclined surfaces 1a and 1b (Fig. 4(a)).
參考顯示火炬前端面(在圖2上、噴嘴打開之下端面)之圖4(a)時,在晶片基體1前端之中心軸位置,具有前端突起1c,在成為熔接方向之y方向,於該前端突起1c之兩側,具有承受噴嘴構件20a、20b之傘21a、21b之背面之前端平面1d、1e。在各前端平面1d、1e之中央位置,具有噴嘴構件插入孔18a、18b(圖5(b))。插入至噴嘴構件插入孔18a、18b之噴嘴構件20a、20b之傘部21a、21b之呈直線地削除一部分圓弧之切口面26a、26b係緊密地接觸到成為前端突起1c側面之卡止面。也就是進行卡合。藉此而阻止噴嘴構件20a、20b相對於晶片基體1之以中心軸作為中心之旋轉。該卡合係發揮在噴嘴構件20a、20b插入至晶片基體1而以螺母25a、25b來進行壓緊及固定時之噴嘴構件20a、20b之停止旋轉以及在為了由晶片基體1來卸除噴嘴構件20a、20b而緩慢地旋轉螺母25a、25b時之噴嘴構件20a、20b之停止旋轉之功能。該卡合係也還發揮在噴嘴軸對於晶片基體中心軸(z)呈 傾斜之噴嘴構件20c、20d(圖6)之該噴嘴軸之傾斜方向來固定(設定)於熔接方向(y)之功能。Referring to FIG. 4(a) showing the front end surface of the flare (in FIG. 2, the lower end of the nozzle opening), the front end projection 1c is provided at the central axis position of the front end of the wafer base 1, and is in the y direction which is the welding direction. Both sides of the front end projection 1c have front end front faces 1d, 1e that receive the umbrellas 21a, 21b of the nozzle members 20a, 20b. The nozzle member insertion holes 18a and 18b are provided at the center of each of the front end planes 1d and 1e (Fig. 5(b)). The notched faces 26a and 26b of the umbrella portions 21a and 21b of the nozzle members 20a and 20b inserted into the nozzle member insertion holes 18a and 18b are linearly cut away to closely contact the locking faces that are the side faces of the front end projections 1c. That is to make a snap. Thereby, the rotation of the nozzle members 20a, 20b with respect to the wafer base 1 with the central axis as the center is prevented. This engagement mechanism functions to stop the rotation of the nozzle members 20a and 20b when the nozzle members 20a and 20b are inserted into the wafer base 1 and to be pressed and fixed by the nuts 25a and 25b, and to remove the nozzle member from the wafer substrate 1. The function of stopping the rotation of the nozzle members 20a and 20b when the nuts 25a and 25b are slowly rotated by 20a and 20b. The engagement system also functions as a nozzle axis for the central axis (z) of the wafer substrate The inclination of the nozzle shafts of the inclined nozzle members 20c and 20d (Fig. 6) is fixed (set) in the welding direction (y).
噴嘴構件插入孔18a、18b之前端平面1d、1e側之部分係成為大直徑之冷卻水循環孔1f、1g,在冷卻水循環孔1f、1g和貫通其中之幹部22a、22b之外圍面之間,形成冷卻水流通空間(冷媒流通空間)。Portions of the nozzle member insertion holes 18a and 18b on the front end planes 1d and 1e are formed as large-diameter cooling water circulation holes 1f and 1g, and are formed between the cooling water circulation holes 1f and 1g and the peripheral faces of the dry portions 22a and 22b penetrating therethrough. Cooling water circulation space (refrigerant circulation space).
在圖4(c),顯示晶片基體1之橫剖面(圖2上之Ⅳc-Ⅳc線剖面)。在晶片基體1,具有水承受孔1h、水出孔1i、繫接冷卻水循環孔1f、1g之橫通水孔1j、冷卻水循環孔1f繫接於水承受孔1j之橫通水孔1k以及冷卻水循環孔1g繫接於水出孔1i之橫通水孔1l。In Fig. 4(c), a cross section of the wafer substrate 1 (section IVc-IVc in Fig. 2) is shown. The wafer substrate 1 has a water receiving hole 1h, a water outlet hole 1i, a horizontal water hole 1j that connects the cooling water circulation holes 1f and 1g, a cooling water circulation hole 1f that is connected to the horizontal water hole 1k of the water receiving hole 1j, and cooling. The water circulation hole 1g is connected to the horizontal water hole 11 of the water outlet hole 1i.
在圖3,顯示圖1上之Ⅲ-Ⅲ線方向之縱剖面。晶片基體1之水承受孔1h係連通至水流管16a,水出孔1i係連通至水流管16b。參考圖4(c)時,注入至水流管16a之冷卻水係通過電極台10a、絕緣本體7和晶片台5之水流路而進入至晶片基體1之水承受孔1h,到達至孔底,由這裡開始通過橫通水孔1k,進入至水循環孔1f和幹部22a之外圍面之間之冷卻水流通空間,接著通過橫通水孔1j而進入至水循環孔1g和幹部22b之外圍面之間之冷卻水流通空間,然後,通過橫通水孔1l而進入至水出孔1i,接著,流動至水流管16b,然後,流出至火炬外部。In Fig. 3, a longitudinal section of the line III-III in Fig. 1 is shown. The water receiving hole 1h of the wafer substrate 1 is connected to the water flow tube 16a, and the water outlet hole 1i is connected to the water flow tube 16b. Referring to FIG. 4(c), the cooling water injected into the water flow tube 16a enters the water receiving hole 1h of the wafer substrate 1 through the water flow path of the electrode stage 10a, the insulating body 7, and the wafer stage 5, and reaches the bottom of the hole. Here, the horizontal water hole 1k is introduced to enter the cooling water circulation space between the water circulation hole 1f and the outer surface of the trunk portion 22a, and then enters between the water circulation hole 1g and the outer surface of the trunk portion 22b through the horizontal water hole 1j. The cooling water circulation space is then passed through the water hole 11 to the water outlet hole 1i, and then flows to the water flow pipe 16b, and then flows out to the outside of the flare.
在冷卻水流動於水循環孔1f和幹部22a之外圍面之間之冷卻水流通空間以及水循環孔1g和幹部22b之外圍面之間之冷卻水流通空間之間,有效地冷卻噴嘴構件20a、20b之幹部22a、22b,並且,在冷卻水流動於水承受孔1h、橫通水孔1k、水循環孔1f、橫通水孔1j、水循環孔1g、橫通水孔1l和水出孔1i之間,有效地冷卻晶片基體1,因此,插入式晶片之冷卻能力變高。在熔接時, 最為加熱噴嘴構件20a、20b,但是,其外圍面係直接地接觸到冷卻水而進行冷卻,因此,噴嘴構件20a、20b之使用壽命變長。The nozzle member 20a, 20b is effectively cooled between the cooling water circulation space between the water circulation hole 1f and the peripheral surface of the trunk portion 22a and the cooling water circulation space between the water circulation hole 1g and the peripheral surface of the trunk portion 22b. The cadres 22a and 22b, and the cooling water flows between the water receiving hole 1h, the horizontal water hole 1k, the water circulation hole 1f, the horizontal water hole 1j, the water circulation hole 1g, the horizontal water hole 11 and the water outlet hole 1i. The wafer substrate 1 is effectively cooled, and therefore, the cooling ability of the interposer wafer becomes high. When welding, The nozzle members 20a and 20b are heated most, but the peripheral surfaces thereof are directly contacted with the cooling water for cooling, and therefore, the service life of the nozzle members 20a and 20b becomes long.
再度參考圖1及圖2時,導向氣體係通過導向氣體管15a、15b及電極插入空間而進入至電極配置空間2a、2b,在電極前端部,成為電漿,通過噴嘴3a、3b而由火炬之前端面來噴出。屏蔽氣體係通過屏蔽氣體管17而進入至內蓋罩7和屏蔽蓋罩8之間之圓筒狀空間,接著,由火炬之前端開始朝向至無圖示之母材而噴出。Referring again to FIGS. 1 and 2, the pilot gas system enters the electrode arrangement spaces 2a and 2b through the guide gas tubes 15a and 15b and the electrode insertion space, and becomes plasma at the tip end portion of the electrode, and is torched by the nozzles 3a and 3b. The front end is sprayed out. The shield gas system enters the cylindrical space between the inner cover 7 and the shield cover 8 through the shield gas pipe 17, and is then ejected from the front end of the torch toward the base material (not shown).
藉由無圖示之各導向電源而在各電極12a、12b和晶片基體1之間,產生導向電弧,在電極12a、12b和母材之間,在藉由流動電極側為負且母材側為正之電漿電弧電流而在熔接方向來供電至前面之電極12a之電漿電源(熔接或預熱用)以及在熔接方向來供電至後面之電極12b之電漿電源(觸吻熔接或正式熔接用)而產生熔接電弧(電漿電弧)時,電漿電弧電流係流動在各電極12a、12b和母材之間,實現單一坑池2個電弧熔接。在該熔接形態,進行藉由電極12a之電漿電弧而造成之熔接或預熱以及藉由電極12b而造成之觸吻熔接或正式熔接。也就是說,在前面之電極12a藉由熔接或預熱而生成之熔融坑池,在後面之電極12b,接觸到觸吻熔接或正式熔接之電漿電弧,例如藉由鍵孔熔接而形成之熔融坑池來傳送至後方,後面之觸吻熔接係平均藉由鍵孔熔接而形成之熔融顆粒。藉此而成為平滑地繫接於母材表面之觸吻熔接顆粒。在未滿3mm之薄板之狀態下,不可能進行鍵孔熔接,因此,藉由前面之熔接或預熱而形成顆粒,這個係藉由後面之觸吻熔接而變化成為平滑之顆粒。正如向來,不同於進行大電流單一坑池之寬幅熔接,前面和後面也全部分成為各種功能,能夠以最低限度必要之低電流,來進行顆粒幅寬狹窄之高速度熔接。此外,即使是使用前面電弧來作為預熱而藉由後面電弧來進行正式熔接之方 法,也可以進行高速度化。也在任何一種狀態下,插入式晶片、特別是容易燒損之噴嘴構件之冷卻能力變高,因此,能夠提高熔接電力而更加高速地進行熔接。A guide arc is generated between the electrodes 12a and 12b and the wafer substrate 1 by the respective guide power sources (not shown), and the flow electrode side is negative and the base material side is between the electrodes 12a and 12b and the base material. A plasma power source (for welding or preheating) that supplies power to the front electrode 12a in the welding direction for the positive plasma arc current and a plasma power source (contact welding or formal welding) that supplies power to the rear electrode 12b in the welding direction. When a welding arc (plasma arc) is generated, the plasma arc current flows between the electrodes 12a and 12b and the base material to realize two arc welding of a single pit. In the welded form, welding or preheating by the plasma arc of the electrode 12a and contact welding or formal welding by the electrode 12b are performed. That is to say, the molten pit pool formed by the welding or preheating of the front electrode 12a is contacted with the plasma arc of the contact welding or the formal welding at the rear electrode 12b, for example, by bonding a keyhole. The pool of molten pits is transported to the rear, and the subsequent contact fusion system is formed by melting the molten particles on the average by the keyholes. Thereby, the contact-welding particles which are smoothly attached to the surface of the base material are formed. In the state of a thin plate of less than 3 mm, it is impossible to perform keyhole welding, and therefore, particles are formed by welding or preheating in the front, which is changed into smooth particles by subsequent contact welding. As always, unlike the wide-width welding of a large current single pit pool, the front and the back are all functions in various ways, and the high-speed welding of the narrow width of the particles can be performed with a minimum necessary minimum current. In addition, even if the front arc is used as the preheating, the formal welding is performed by the rear arc. The method can also be speeded up. Also in any of the states, the insert type wafer, particularly the nozzle member which is easily burned, has a high cooling capacity, so that the welding power can be increased and the welding can be performed at a higher speed.
-第2實施例-- Second embodiment -
在圖6(b1),顯示替換圖2所示之噴嘴構件20a及/或20b而使用之第1變化形態之噴嘴構件20c之前視外觀,在圖6(b2),顯示該噴嘴構件20c之縱剖面,在圖6(b3),顯示該噴嘴構件20c之底面(前端面)。圖2所示之噴嘴構件20a、20b之噴嘴3a、3b之中心軸係同心於噴嘴構件之中心軸。但是,噴嘴構件20c之噴嘴3c係相對於噴嘴構件20c之中心軸呈傾斜,因此,在該噴嘴構件20c裝設於晶片基體1時,以其切口面26c卡合於晶片基體1之前端突起1c之狀態,使得噴嘴3c之中心軸係傾斜於離開晶片基體之中心軸(噴嘴構件插入孔之中間點)之方向。也就是說,相對於晶片基體1之中心軸而傾斜在熔接方向(y)之前方側(成為前面噴嘴之狀態)或後方側(成為後面噴嘴之狀態),可以進行加寬極間(前後熔接點間之距離)之熔接。Fig. 6(b1) shows the front appearance of the nozzle member 20c according to the first modification used in place of the nozzle members 20a and/or 20b shown in Fig. 2, and Fig. 6(b2) shows the longitudinal direction of the nozzle member 20c. In the cross section, the bottom surface (front end surface) of the nozzle member 20c is shown in Fig. 6 (b3). The central axes of the nozzles 3a, 3b of the nozzle members 20a, 20b shown in Fig. 2 are concentric with the central axis of the nozzle member. However, the nozzle 3c of the nozzle member 20c is inclined with respect to the central axis of the nozzle member 20c. Therefore, when the nozzle member 20c is mounted on the wafer substrate 1, the slit surface 26c is engaged with the front end projection 1c of the wafer substrate 1. The state is such that the central axis of the nozzle 3c is inclined in a direction away from the central axis of the wafer substrate (the intermediate point of the nozzle member insertion hole). In other words, it is possible to perform widening between the front and rear sides (the state of the front nozzle) or the rear side (the state of the rear nozzle) with respect to the central axis of the wafer base 1 in the welding direction (y). Splicing of the distance between points).
-第3實施例一- Third embodiment one
在圖6(c1),顯示替換圖2所示之噴嘴構件20a及/或20b而使用之第2變化形態之噴嘴構件20d之前視外觀,在圖6(c2),顯示該噴嘴構件20d之縱剖面,在圖6(c3),顯示該噴嘴構件20d之底面(前端面)。噴嘴構件20d之噴嘴3d係相對於噴嘴構件20d之中心軸而傾斜在相反於噴嘴3c之相反方向,在該噴嘴構件20d裝設於晶片基體1時,以其切口面26d卡合於晶片基體1之前端突起1c之狀態,使得噴嘴3d之中心軸係傾斜於接近晶片基體1之中心軸(噴嘴構件插入孔之中間點)之方向。也就是說,在熔接方向(y),進行傾斜而接近晶片基體1之中心軸,可以進 行窄化極間(前後熔接點間之距離)之熔接。6(c1), the front view of the nozzle member 20d according to the second modification used in place of the nozzle member 20a and/or 20b shown in Fig. 2 is shown, and the longitudinal direction of the nozzle member 20d is shown in Fig. 6(c2). In the cross section, the bottom surface (front end surface) of the nozzle member 20d is shown in Fig. 6 (c3). The nozzle 3d of the nozzle member 20d is inclined with respect to the central axis of the nozzle member 20d in the opposite direction to the nozzle 3c. When the nozzle member 20d is mounted on the wafer substrate 1, the slit surface 26d is engaged with the wafer substrate 1 The state of the front end projection 1c is such that the central axis of the nozzle 3d is inclined in a direction approaching the central axis of the wafer base 1 (the intermediate point of the nozzle member insertion hole). That is to say, in the welding direction (y), tilting to approach the central axis of the wafer substrate 1 can be advanced The welding of the narrowing poles (the distance between the front and rear welding points).
此外,作為噴嘴構件裝設於晶片基體1之插入式晶片係有(1)圖2所示之實施例之形態;(2)替換圖2所示之噴嘴構件20a而成為噴嘴構件20c,在熔接方向(y),使得噴嘴構件20c成為前面噴嘴之形態;(3)替換圖2所示之噴嘴構件20a而成為噴嘴構件20c,使得噴嘴構件20c成為後面噴嘴之形態;(4)使得圖2所示之噴嘴構件20a、20b全部成為噴嘴構件20c狀態之形態;(5)替換圖2所示之噴嘴構件20a而成為噴嘴構件20d,使得噴嘴構件20d成為前面噴嘴之形態;(6)替換圖2所示之噴嘴構件20a而成為噴嘴構件20d,使得噴嘴構件20d成為後面噴嘴之形態;(7)使得圖2所示之噴嘴構件20a、20b全部成為噴嘴構件20d之狀態之形態;(8)替換圖2所示之噴嘴構件20a、20b而成為噴嘴構件20c、20d,使得噴嘴構件20c成為前面噴嘴之形態;以及,(9)替換圖2所示之噴嘴構件20a、20b而成為噴嘴構件20c、20d,使得噴嘴構件20d成為前面噴嘴之形態。可以對應於熔接對象板厚及要求之熔接電流、熔接速度及熔接品質(例如希望之顆粒形狀)而選擇前述(1)~(9)形態之任何一種。Further, the interposer wafer to which the nozzle member is mounted on the wafer substrate 1 is in the form of the embodiment shown in Fig. 2; (2) the nozzle member 20a is replaced by the nozzle member 20a shown in Fig. 2, and is welded. The direction (y) causes the nozzle member 20c to be in the form of the front nozzle; (3) the nozzle member 20a shown in Fig. 2 is replaced with the nozzle member 20c, so that the nozzle member 20c becomes the shape of the rear nozzle; (4) the Fig. 2 is made The nozzle members 20a and 20b are all in the state of the nozzle member 20c. (5) The nozzle member 20a is replaced with the nozzle member 20a as shown in Fig. 2, so that the nozzle member 20d is in the form of the front nozzle; (6) replacing Fig. 2 The nozzle member 20a is shown as the nozzle member 20d so that the nozzle member 20d is in the form of a rear nozzle; (7) the nozzle members 20a and 20b shown in Fig. 2 are all in the state of the nozzle member 20d; (8) The nozzle members 20a and 20b shown in Fig. 2 are the nozzle members 20c and 20d, so that the nozzle member 20c is in the form of a front nozzle; and (9) the nozzle member 20a, 20b shown in Fig. 2 is replaced with the nozzle member 20c, 20d, making the nozzle member 20d becomes the shape of the front nozzle. Any one of the above forms (1) to (9) may be selected in accordance with the thickness of the welding target and the required welding current, welding speed, and welding quality (for example, a desired particle shape).
1‧‧‧晶片基體1‧‧‧ wafer base
1a、1b‧‧‧傾斜面1a, 1b‧‧‧ sloped surface
1c‧‧‧前端突起1c‧‧‧ front end projection
1d、1e‧‧‧前端平面1d, 1e‧‧‧ front plane
1f、1g‧‧‧水循環孔1f, 1g‧‧‧ water circulation hole
1h‧‧‧水承受孔1h‧‧‧ water receiving hole
1i‧‧‧水出孔1i‧‧‧Water outlet
1j、1k、1l‧‧‧橫通水孔1j, 1k, 1l‧‧‧ horizontal water holes
2a-2d‧‧‧電極配置空間2a-2d‧‧‧electrode configuration space
3a-3d‧‧‧噴嘴3a-3d‧‧‧ nozzle
5‧‧‧晶片台5‧‧‧ wafer station
6‧‧‧內蓋罩6‧‧‧ inner cover
7‧‧‧絕緣本體7‧‧‧Insulated body
8‧‧‧屏蔽蓋罩8‧‧‧Shield cover
9a、9b‧‧‧定心石9a, 9b‧‧‧ centering stone
10a、10b‧‧‧電極台10a, 10b‧‧‧ electrode table
11‧‧‧絕緣襯墊11‧‧‧Insulation pad
12a、12b‧‧‧電極12a, 12b‧‧‧ electrodes
13a、13b‧‧‧螺絲13a, 13b‧‧‧ screws
14‧‧‧外筒14‧‧‧Outer tube
15a、15b‧‧‧導向氣體管15a, 15b‧‧‧ Guided gas tubes
16a、16b‧‧‧水流管16a, 16b‧‧‧ water flow tube
17‧‧‧屏蔽氣體管17‧‧‧Shielding gas pipe
18a、18b‧‧‧噴嘴構件插入孔18a, 18b‧‧‧ nozzle member insertion hole
20a-20d‧‧‧噴嘴構件20a-20d‧‧‧Nozzle components
21a-21d‧‧‧傘部21a-21d‧‧‧ Umbrella Department
22a-22d‧‧‧幹部22a-22d‧‧‧ cadres
23a-23d‧‧‧O型環23a-23d‧‧‧O-ring
24a-24d‧‧‧公螺紋部24a-24d‧‧‧ Male thread
25a、25b‧‧‧螺母25a, 25b‧‧‧ nuts
26a-26d‧‧‧切口面26a-26d‧‧‧cut surface
圖1係顯示俯視本發明之第1實施例之電漿火炬之外筒內部之俯視圖。Fig. 1 is a plan view showing the inside of an outer cylinder of a plasma torch according to a first embodiment of the present invention.
圖2係圖1所示之電漿火炬之Ⅱ-Ⅱ線剖面圖。Figure 2 is a cross-sectional view taken along line II-II of the plasma torch shown in Figure 1.
圖3係圖1所示之電漿火炬之Ⅲ-Ⅲ線剖面圖。Figure 3 is a sectional view taken along line III-III of the plasma torch shown in Figure 1.
圖4(a)係在Ⅳa-Ⅳa線方向來仰視圖2所示之電漿火炬之前端之仰視圖;圖4(b)係仰視於圖3所示之Ⅳb-Ⅳb線方向之仰視圖;圖4(c)係俯視於圖2所示之Ⅳc-Ⅳc線方向之橫剖面圖。Figure 4 (a) is a bottom view of the front end of the plasma torch shown in bottom view 2 in the direction of the IVa-IVa line; Figure 4 (b) is a bottom view of the line IVb-IVb shown in Figure 3; Fig. 4(c) is a cross-sectional view taken along the line IVc-IVc shown in Fig. 2.
圖5(a)係顯示由火炬本體而卸除圖2所示之電漿火炬之前端之插入式晶片及內蓋罩6之縱剖面圖;圖5(b)係僅顯示(a)所示之晶片基體1和內蓋罩6之縱剖面圖;圖5(c)係一起顯示螺母25a、25b以及由噴嘴構件20a、20b來卸除(a)所示之螺母25a、25b而由晶片基體1來拔出噴嘴構件之前視圖(外觀圖)。Figure 5 (a) is a longitudinal sectional view showing the insert wafer and the inner cover 6 at the front end of the plasma torch shown in Figure 2 removed from the torch body; Figure 5 (b) shows only (a) A longitudinal cross-sectional view of the wafer substrate 1 and the inner cover 6; FIG. 5(c) shows the nuts 25a, 25b together and the nut 25a, 25b shown by (a) is removed from the nozzle members 20a, 20b by the wafer substrate 1 Pull out the front view (appearance view) of the nozzle member.
圖6(a1)係顯示擴大圖5(c)所示之噴嘴構件20a之前視圖;圖6(a2)係該噴嘴構件20a之縱剖面圖;圖6(a3)係該噴嘴構件20a之仰視圖;圖6(b1)係顯示可以替代圖2所示之噴嘴構件20a、20b之一種或兩者而裝設於晶片基體1之第1變化形態之噴嘴構件20c之前視圖;圖6(b2)係該噴嘴構件20c之縱剖面圖;圖6(b3)係該噴嘴構件20c之仰視圖;圖6(c1)係顯示可以替代圖2所示之噴嘴構件20a、20b之一種或兩者而裝設於晶片基體1之第2變化形態之噴嘴構件20d之前視圖;圖6(c2)係該噴嘴構件20d之縱剖面圖;圖6(c3)係該噴嘴構件20d之仰視圖。Figure 6 (a1) is a front view showing the expansion of the nozzle member 20a shown in Figure 5 (c); Figure 6 (a2) is a longitudinal sectional view of the nozzle member 20a; Figure 6 (a3) is a bottom view of the nozzle member 20a Fig. 6(b1) is a front view showing the nozzle member 20c which is attached to the first modification of the wafer substrate 1 in place of or in place of the nozzle members 20a and 20b shown in Fig. 2; Fig. 6(b2) A longitudinal sectional view of the nozzle member 20c; Fig. 6(b3) is a bottom view of the nozzle member 20c; and Fig. 6(c1) shows an alternative to the nozzle members 20a, 20b shown in Fig. 2 Fig. 6(c2) is a longitudinal sectional view of the nozzle member 20d, and Fig. 6(c3) is a bottom view of the nozzle member 20d.
1‧‧‧晶片基體1‧‧‧ wafer base
1c‧‧‧前端突起1c‧‧‧ front end projection
1f、1g‧‧‧水循環孔1f, 1g‧‧‧ water circulation hole
1j‧‧‧橫通水孔1j‧‧‧cross water hole
2a、2b‧‧‧電極配置空間2a, 2b‧‧‧electrode configuration space
3a、3b‧‧‧噴嘴3a, 3b‧‧‧ nozzle
6‧‧‧內蓋罩6‧‧‧ inner cover
18a、18b‧‧‧噴嘴構件插入孔18a, 18b‧‧‧ nozzle member insertion hole
20a、20b‧‧‧噴嘴構件20a, 20b‧‧‧ nozzle components
21a、21b‧‧‧傘部21a, 21b‧‧‧ Umbrella Department
22a、22b‧‧‧幹部22a, 22b‧‧‧ cadres
23a、23b‧‧‧O型環23a, 23b‧‧‧O-ring
24a、24b‧‧‧公螺紋部24a, 24b‧‧‧ male thread
25a、25b‧‧‧螺母25a, 25b‧‧‧ nuts
26a、26b‧‧‧切口面26a, 26b‧‧‧cut face
Claims (8)
Applications Claiming Priority (1)
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JP2011017342A JP5626994B2 (en) | 2011-01-30 | 2011-01-30 | Insert tip and plasma torch |
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TW201234930A TW201234930A (en) | 2012-08-16 |
TWI483653B true TWI483653B (en) | 2015-05-01 |
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TW100128807A TWI483653B (en) | 2011-01-30 | 2011-08-12 | Insert-chip and plasma torch |
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KR (1) | KR101311042B1 (en) |
CN (1) | CN102615408B (en) |
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JP5796847B2 (en) * | 2012-03-08 | 2015-10-21 | 日鐵住金溶接工業株式会社 | Insert tip and plasma torch |
JP6214048B2 (en) * | 2013-12-06 | 2017-10-18 | 日鐵住金溶接工業株式会社 | Multi-electrode welding torch |
CN114411086A (en) * | 2021-12-23 | 2022-04-29 | 南京威登等离子科技设备有限公司 | Multi-nozzle plasma surface treatment equipment |
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JP2010120018A (en) * | 2008-11-17 | 2010-06-03 | Daihen Corp | Plasma welding torch |
JP4920029B2 (en) * | 2008-12-14 | 2012-04-18 | 日鐵住金溶接工業株式会社 | Insert tip and plasma torch |
-
2011
- 2011-01-30 JP JP2011017342A patent/JP5626994B2/en active Active
- 2011-08-12 TW TW100128807A patent/TWI483653B/en not_active IP Right Cessation
- 2011-09-30 KR KR1020110100042A patent/KR101311042B1/en active IP Right Grant
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2012
- 2012-01-20 CN CN201210031184.9A patent/CN102615408B/en not_active Expired - Fee Related
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US2756311A (en) * | 1954-03-24 | 1956-07-24 | Union Carbide & Carbon Corp | High-speed tandem arc working |
US6265690B1 (en) * | 1998-04-03 | 2001-07-24 | Cottin Development Ltd. | Plasma processing device for surfaces |
US6172333B1 (en) * | 1999-08-18 | 2001-01-09 | Lincoln Global, Inc. | Electric welding apparatus and method |
CN1726111A (en) * | 2002-12-12 | 2006-01-25 | 弗罗纽斯国际有限公司 | Protective cap for conduction nozzle of welding torch and welding torch with protective cap |
CN101495263A (en) * | 2006-08-02 | 2009-07-29 | 大阳日酸株式会社 | Tandem gas metal arc welding method, and welding torch and welding apparatus used in the method |
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TW201234930A (en) | 2012-08-16 |
CN102615408B (en) | 2014-10-08 |
JP5626994B2 (en) | 2014-11-19 |
KR101311042B1 (en) | 2013-09-24 |
JP2012157868A (en) | 2012-08-23 |
CN102615408A (en) | 2012-08-01 |
KR20120088508A (en) | 2012-08-08 |
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