TWI483082B - 具有至少兩操作狀態之微影投影曝光裝置 - Google Patents

具有至少兩操作狀態之微影投影曝光裝置 Download PDF

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Publication number
TWI483082B
TWI483082B TW098127714A TW98127714A TWI483082B TW I483082 B TWI483082 B TW I483082B TW 098127714 A TW098127714 A TW 098127714A TW 98127714 A TW98127714 A TW 98127714A TW I483082 B TWI483082 B TW I483082B
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TW
Taiwan
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TW098127714A
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English (en)
Chinese (zh)
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TW201017344A (en
Inventor
漢斯 喬爾根 曼
溫費得 凱瑟
Original Assignee
卡爾蔡司Ｓｍｔ有限公司
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Publication of TW201017344A publication Critical patent/TW201017344A/zh
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Publication of TWI483082B publication Critical patent/TWI483082B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
TW098127714A 2008-09-29 2009-08-18 具有至少兩操作狀態之微影投影曝光裝置 TWI483082B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen

Publications (2)

Publication Number Publication Date
TW201017344A TW201017344A (en) 2010-05-01
TWI483082B true TWI483082B (zh) 2015-05-01

Family

ID=41794732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098127714A TWI483082B (zh) 2008-09-29 2009-08-18 具有至少兩操作狀態之微影投影曝光裝置

Country Status (7)

Country Link
US (1) US9529276B2 (OSRAM)
JP (1) JP5634403B2 (OSRAM)
KR (1) KR101666690B1 (OSRAM)
CN (1) CN102171614B (OSRAM)
DE (1) DE102008042438B4 (OSRAM)
TW (1) TWI483082B (OSRAM)
WO (1) WO2010034382A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
WO2016192964A1 (en) * 2015-05-29 2016-12-08 Asml Netherlands B.V. Simulation of lithography using multiple-sampling of angular distribution of source radiation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US20060139745A1 (en) * 2004-12-23 2006-06-29 Asml Holding N.V. Projection system for a lithograhic apparatus
US20060146302A1 (en) * 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
CN101263430A (zh) * 2005-09-13 2008-09-10 卡尔蔡司Smt股份有限公司 微光刻投影光学系统、用于制造装置的方法以及设计光学表面的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
US20060104413A1 (en) * 2003-03-05 2006-05-18 Tadahiro Ohmi Mask repeater and mask manufacturing method
WO2006117122A1 (en) * 2005-05-03 2006-11-09 Carl Zeiss Smt Ag Microlithography exposure apparatus using polarized light and microlithography projection system having concave primary and secondary mirrors
TWI451125B (zh) 2005-09-13 2014-09-01 卡爾蔡司Ｓｍｔ有限公司 顯微蝕刻投影光學系統、包含此一光學系統之顯微蝕刻工具、使用此一顯微蝕刻工具於顯微蝕刻生產微結構元件之方法、藉此一方法所生產之微結構元件以及於此一光學系統中設計一光學表面的方法
WO2007115597A1 (en) * 2006-04-07 2007-10-18 Carl Zeiss Smt Ag Microlithography projection optical system, tool and method of production
KR20080012240A (ko) * 2006-08-02 2008-02-11 칼 짜이스 에스엠티 아게 193ｎｍ 이하의 파장을 갖는 투영 노광 장치를 위한 조명시스템
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US20060139745A1 (en) * 2004-12-23 2006-06-29 Asml Holding N.V. Projection system for a lithograhic apparatus
US20060146302A1 (en) * 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
CN101263430A (zh) * 2005-09-13 2008-09-10 卡尔蔡司Smt股份有限公司 微光刻投影光学系统、用于制造装置的方法以及设计光学表面的方法
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same

Also Published As

Publication number Publication date
WO2010034382A1 (en) 2010-04-01
JP5634403B2 (ja) 2014-12-03
KR101666690B1 (ko) 2016-10-17
CN102171614A (zh) 2011-08-31
TW201017344A (en) 2010-05-01
DE102008042438A1 (de) 2010-04-08
CN102171614B (zh) 2012-08-08
US9529276B2 (en) 2016-12-27
US20110200946A1 (en) 2011-08-18
KR20110059721A (ko) 2011-06-03
JP2012504320A (ja) 2012-02-16
DE102008042438B4 (de) 2010-11-04

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